CN108485532A - The sapphire polishing liquid and its polishing process of high surface smoothness - Google Patents
The sapphire polishing liquid and its polishing process of high surface smoothness Download PDFInfo
- Publication number
- CN108485532A CN108485532A CN201810364801.4A CN201810364801A CN108485532A CN 108485532 A CN108485532 A CN 108485532A CN 201810364801 A CN201810364801 A CN 201810364801A CN 108485532 A CN108485532 A CN 108485532A
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- Prior art keywords
- polishing
- sapphire
- precise
- surface smoothness
- rough
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention relates to a kind of sapphire polishing liquids and its polishing process of high surface smoothness, including rough polishing solution and precise polishing solution, the rough polishing solution includes containing 20 50% aluminium dioxide nano particle of weight ratio, 3 10% sodium methoxide, 0.1 1% sodium metnylene bis-naphthalene sulfonate, 0.5 2% iminodisuccinic acid sodium salt and the solvent of surplus；The precise polishing solution includes containing 20 50% hydrophilic nano SiO 2 particle of weight ratio, 0.1 1% nonionic surface active agent fatty alcohol polyoxyethylene ether, 0.5 2% Sodium Polyacrylate, 0.2 1.5% hydroxyl second class ethylenediamine and the solvent of surplus.The present invention can either meet the requirement of high polishing removal rate, the sapphire surface of high-flatness and ultralow roughness can be formed again, the polishing fluid price is relatively low, polishing process is easy to control, production yield is high, and product quality is stablized, the polishing method that rough polishing and fine polishing can be used to combine, both high removal rate may be implemented quickly to produce, can also reach the precise polished requirement of high-flatness and extremely low surface roughness.
Description
Technical field
The present invention relates to a kind of sapphire polishing liquids and its polishing process of high surface smoothness, belong to sapphire polishing skill
Art field.
Background technology
Sapphire can be a kind of high-hardness ceramic material, be mainly used in wrist-watch eyeglass, mobile-phone lens, camera eyeglass
Deng high with hardness, it is not easy to the features such as scratching.
Sapphire crystal hardness is very high, is 9 grades of Mohs' hardness, is only second to diamond.It has good translucency, heat
Conductibility and electric insulating quality, mechanics good mechanical property, and have the characteristics that wear-resisting and weather-proof.Sapphire crystal melts
Point is 2050 DEG C, and 3500 DEG C of boiling point, maximum operating temperature is up to 1900 DEG C.Sapphire crystal still has preferable at high temperature
Stability has good transmitance, therefore in LED, the photoelectrons such as mobile phone, communication, national defence in visible and infrared region
Field all has a wide range of applications.Above application field, which is required to sapphire, has good surface processing accuracy and surface complete
Property.
Due to the high rigidity of sapphire crystal, high chemical stability, cause sapphire high-efficiency low-damage processing technology at
To hinder the widely applied major obstacle of sapphire.Currently, growing technology of the monomer in the sapphire crystal of 100kg or more sizes
Tend to be ripe, it can be as the substrate slice of blue-light LED chip, or as the sapphire window piece of other application, indigo plant in order to obtain
Gem crystal cuts by drawing stick, after process of lapping, needs to carry out precise polished to obtain final surface roughness.Mesh
Preceding only chemical Mechanical Polishing Technique can obtain lower surface roughness and the removal of higher material at lower cost
Rate, however, due to the high rigidity of sapphire crystal, high chemical stability, whole process takes tediously long very much, consumes manpower, adds
Work inefficiency has seriously affected the large-scale industrial application of Sapphire wafer.Cannot achieve sapphire polishing removal rate and
High surface smoothness reaches simultaneously.
Invention content
It is an object of the invention to：In view of the drawbacks of the prior art, it is proposed that a kind of sapphire throwing of high surface smoothness
Light liquid and its polishing process can either improve sapphire polishing efficiency, and be capable of providing high surface smoothness and surface quality
Sapphire polishing liquid.
The technical solution adopted in the present invention is：A kind of sapphire polishing liquid of high surface smoothness, including rough polishing solution
And precise polishing solution, the rough polishing solution include containing weight ratio 20-50% aluminium dioxides nano particle, 3-10% sodium methoxide,
Sodium metnylene bis-naphthalene sulfonate, the iminodisuccinic acid sodium salt of 0.5-2% and the solvent of surplus of 0.1-1%；The essence is thrown
Light liquid includes the nonionic surface active agent fat containing weight ratio 20-50% hydrophilics nano SiO 2 particle, 0.1-1%
Alcohol polyoxyethylene ether (AEO), the Sodium Polyacrylate of 0.5-2%, the hydroxyl second class ethylenediamine of 0.2-1.5% and the solvent of surplus.Institute
The grain size D50 for stating the aluminium dioxide nano particle in rough polishing solution is 180 nanometers, and D97 is 250 nanometers；In the precise polishing solution
Nano SiO 2 particle grain size D50 be 70 nanometers, D97 be 90 nanometers.
A kind of sapphire polishing process of high surface smoothness, first uses rough polishing liquid to polish sapphire, and polish pressure exists
0.1Mpa to 0.2Mpa, polishing disk rotating speed 60-90r/min polish flow velocity 200-300mL/min, polish temperature 20-35
DEG C, polishing time 10 minutes, polishing removal rate is 250-320nm/min, and surface roughness Ra is up to 0.3nm, 0.2 μ of flatness
m；Sapphire is polished with fine polishing liquid afterwards, polishing disk rotating speed 40-60r/min, polishes flow velocity 120-180mL/min, polishing
20-35 DEG C of temperature, polishing time 5 minutes, polishing removal rate are 20-50nm/min, and surface roughness Ra is less than 0.1nm, smooth
0.1 μm of degree.
After adopting the above technical scheme, beneficial effects of the present invention are：The present invention can either meet high polishing removal rate
It is required that and the sapphire surface of high-flatness and ultralow roughness can be formed, the polishing fluid price is relatively low, and polishing process is easy
Control, production yield is high, and product quality is stablized, and for the product of general surface roughness requirements, can be thrown using rough polishing solution
Light may be implemented high removal rate polishing, improve production efficiency, the product of the requirement for high-precision polished surface can use
Rough polishing and fine polishing combine polishing method, high removal rate both may be implemented and quickly produced, can also reach high-flatness and
The precise polished requirement of extremely low surface roughness.
Specific implementation mode
Below in conjunction with embodiment, the present invention is further illustrated.
Embodiment 1
A kind of sapphire polishing liquid of high surface smoothness, including rough polishing solution and precise polishing solution.
Rough polishing solution configures：Following component is uniformly mixed, 50% aluminium dioxide nano particle of weight ratio, 6% sodium methoxide,
0.16% sodium metnylene bis-naphthalene sulfonate, 0.7% iminodisuccinic acid sodium salt and the deionized water of surplus.
Precise polishing solution configures：Following component is uniformly mixed, 40% hydrophilic nano SiO 2 particle of weight ratio, 0.3%
Nonionic surface active agent fatty alcohol polyoxyethylene ether (AEO), 0.8% Sodium Polyacrylate, 1.2% hydroxyl second class second two
The deionized water of amine and surplus.
A kind of sapphire polishing process of high surface smoothness：First rough polishing liquid is used to polish sapphire, polish pressure exists
0.15Mpa, polishing disk rotating speed 70r/min, polishing flow velocity 240mL/min, 25 DEG C of polish temperature, polishing time 10 minutes,
Polishing removal rate is 280nm/min, and surface roughness Ra is up to 0.3nm, 0.2 μm of flatness, after sapphire is thrown with fine polishing liquid
Light, polishing disk rotating speed 40-60r/min polish flow velocity 120-180mL/min, 20-35 DEG C of polish temperature, and polishing time 5 divides
Clock, polishing removal rate are 30nm/min, surface roughness Ra 0.08nm, 0.1 μm of flatness.
Embodiment 2
A kind of sapphire polishing liquid of high surface smoothness, including rough polishing solution and precise polishing solution.
Rough polishing solution configures：Following component is uniformly mixed, 40% aluminium dioxide nano particle of weight ratio, 8% sodium methoxide,
0.25% sodium metnylene bis-naphthalene sulfonate, 1.5% iminodisuccinic acid sodium salt and the deionized water of surplus.
Precise polishing solution configures：Following component is uniformly mixed, 50% hydrophilic nano SiO 2 particle of weight ratio, 0.5%
Nonionic surface active agent fatty alcohol polyoxyethylene ether (AEO), 0.9% Sodium Polyacrylate, 1.5% hydroxyl second class second two
The deionized water of amine and surplus.
A kind of sapphire polishing process of high surface smoothness：First rough polishing liquid is used to polish sapphire, polish pressure exists
0.17Mpa, polishing disk rotating speed 90r/min, polishing flow velocity 270mL/min, 25 DEG C of polish temperature, polishing time 10 minutes,
Polishing removal rate is 300nm/min, and surface roughness Ra is up to 0.3nm, 0.2 μm of flatness, after sapphire is thrown with fine polishing liquid
Light, polishing disk rotating speed 40-60r/min polish flow velocity 120-180mL/min, 20-35 DEG C of polish temperature, and polishing time 5 divides
Clock, polishing removal rate are 35nm/min, surface roughness Ra 0.09nm, 0.1 μm of flatness.
For a person skilled in the art, any equal modification and replacement to the technical program is all in the present invention
Range among.Therefore, without departing from the spirit and scope of the invention made by impartial conversion and modification, should all cover this
The range of invention.
Claims (4)
1. a kind of sapphire polishing liquid of high surface smoothness, it is characterised in that：It is described including rough polishing solution and precise polishing solution
Rough polishing solution includes the methylene dinaphthalene containing weight ratio 20-50% aluminium dioxides nano particle, the sodium methoxide of 3-10%, 0.1-1%
Sodium sulfonate, the iminodisuccinic acid sodium salt of 0.5-2% and the solvent of surplus；The precise polishing solution includes containing weight ratio
20-50% hydrophilics nano SiO 2 particle, 0.1-1% nonionic surface active agent fatty alcohol polyoxyethylene ether (AEO),
Sodium Polyacrylate, the hydroxyl second class ethylenediamine of 0.2-1.5% and the solvent of surplus of 0.5-2%.
2. the sapphire polishing liquid of high surface smoothness according to claim 1, it is characterised in that：In the rough polishing solution
Aluminium dioxide nano particle grain size D50 be 180 nanometers, D97 be 250 nanometers.
3. the sapphire polishing liquid of high surface smoothness according to claim 1, it is characterised in that：In the precise polishing solution
Nano SiO 2 particle grain size D50 be 70 nanometers, D97 be 90 nanometers.
4. a kind of polishing process of the sapphire polishing liquid of high surface smoothness using claim 1-3 any one, special
Sign is：First rough polishing liquid is used to polish sapphire, polish pressure is in 0.1Mpa to 0.2Mpa, polishing disk rotating speed 60-90r/
Min polishes flow velocity 200-300mL/min, and 20-35 DEG C of polish temperature, polishing time 10 minutes, polishing removal rate is 250-
320nm/min, surface roughness Ra is up to 0.3nm, 0.2 μm of flatness；Sapphire is polished with fine polishing liquid afterwards, polishing disk rotating speed
40-60r/min, polishes flow velocity 120-180mL/min, 20-35 DEG C of polish temperature, and polishing time 5 minutes polishes removal rate
For 20-50nm/min, surface roughness Ra is less than 0.1nm, 0.1 μm of flatness.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810364801.4A CN108485532A (en) | 2018-04-23 | 2018-04-23 | The sapphire polishing liquid and its polishing process of high surface smoothness |
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| CN201810364801.4A CN108485532A (en) | 2018-04-23 | 2018-04-23 | The sapphire polishing liquid and its polishing process of high surface smoothness |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110076682A (en) * | 2019-05-22 | 2019-08-02 | 大连理工大学 | A kind of Sapphire Substrate cmp method |
| CN111662642A (en) * | 2020-07-13 | 2020-09-15 | 万华化学集团股份有限公司 | Sapphire polishing composition and preparation method thereof |
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| JP2005064285A (en) * | 2003-08-14 | 2005-03-10 | Hitachi Chem Co Ltd | Polishing solution and polishing method for cmp |
| CN1857865A (en) * | 2006-05-31 | 2006-11-08 | 天津晶岭微电子材料有限公司 | Control method for surface roughness of saphire substrate material |
| CN101029208A (en) * | 2006-02-24 | 2007-09-05 | H.C.施塔克公司 | Polishing agent |
| CN101781524A (en) * | 2009-01-20 | 2010-07-21 | 昆山市百益电子科技材料有限公司 | Wafer precise polishing solution |
| CN101781525A (en) * | 2009-01-20 | 2010-07-21 | 昆山市百益电子科技材料有限公司 | Wafer rough polishing solution |
| CN103624665A (en) * | 2013-11-26 | 2014-03-12 | 浙江上城科技有限公司 | Two-sided polishing method of sapphire touch panel |
| CN104559798A (en) * | 2014-12-24 | 2015-04-29 | 上海新安纳电子科技有限公司 | Alumina-based chemical mechanical polishing slurry |
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2018
- 2018-04-23 CN CN201810364801.4A patent/CN108485532A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005064285A (en) * | 2003-08-14 | 2005-03-10 | Hitachi Chem Co Ltd | Polishing solution and polishing method for cmp |
| CN101029208A (en) * | 2006-02-24 | 2007-09-05 | H.C.施塔克公司 | Polishing agent |
| CN1857865A (en) * | 2006-05-31 | 2006-11-08 | 天津晶岭微电子材料有限公司 | Control method for surface roughness of saphire substrate material |
| CN101781524A (en) * | 2009-01-20 | 2010-07-21 | 昆山市百益电子科技材料有限公司 | Wafer precise polishing solution |
| CN101781525A (en) * | 2009-01-20 | 2010-07-21 | 昆山市百益电子科技材料有限公司 | Wafer rough polishing solution |
| CN103624665A (en) * | 2013-11-26 | 2014-03-12 | 浙江上城科技有限公司 | Two-sided polishing method of sapphire touch panel |
| CN104559798A (en) * | 2014-12-24 | 2015-04-29 | 上海新安纳电子科技有限公司 | Alumina-based chemical mechanical polishing slurry |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110076682A (en) * | 2019-05-22 | 2019-08-02 | 大连理工大学 | A kind of Sapphire Substrate cmp method |
| CN111662642A (en) * | 2020-07-13 | 2020-09-15 | 万华化学集团股份有限公司 | Sapphire polishing composition and preparation method thereof |
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Application publication date: 20180904 |