CN105171941A - Preparing method for sapphire touch screen panel - Google Patents
Preparing method for sapphire touch screen panel Download PDFInfo
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- CN105171941A CN105171941A CN201510339564.2A CN201510339564A CN105171941A CN 105171941 A CN105171941 A CN 105171941A CN 201510339564 A CN201510339564 A CN 201510339564A CN 105171941 A CN105171941 A CN 105171941A
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Abstract
The invention relates to a preparing method for a sapphire touch screen panel. The preparing method comprises the specific steps of crystal growing, crystal ingot drawing, crystal cutting, laser sheet taking, grinding, chamfering, annealing, double-sided polishing, printing ink coating, heat baking and other procedures. According to the preparing method for the sapphire touch screen panel, the sheet forming quality is high, the rejection rate is low, and the production efficiency is high.
Description
Technical field
The present invention relates to a kind of preparation method of sapphire sheet, particularly relate to a kind of preparation method of sapphire touch Panel, belong to technical field of sapphire treatment.
Background technology
In the modern life, the electronic product such as mobile phone, panel computer has become the requisite electronic product of people, and giant-screen has become the development trend of the electronic products such as mobile phone, and this just requires more and more higher to the intensity of touch panel and light transmission.
Along with the progress of science and technology, the touch Panel application of sapphire material is more and more extensive.Sapphire has good thermal characteristics, fabulous electrical characteristic and dielectric property, at high temperature can keep high strength, excellent hot attribute and transmitance, and anti-chemical corrosion.Be the touch Panel that raw material is made with sapphire, definition is high, third dimension good, surperficial damage resistant, and customer satisfaction is high.
Chinese patent literature ZL201420600055.1 discloses a kind of high strength handset touch panel, comprise touch-screen and housing, the lower surface of touch-screen is embedded with colored ribbon, housing adopts the mode of parcel to be connected with touch-screen, projection is provided with outside the upper surface of housing, touch-screen comprises cover-plate glass, sapphire layer, polaroid, touch sensor and insulating protective layer, cover-plate glass upper surface is coated with DLC film, sapphire layer is located at below cover-plate glass, polaroid is located at below sapphire layer, touch sensor is located in the touch screen district below polaroid, light-shielding material layers is provided with in non-touch screen district below polaroid, the connection line between touch sensor and FPC is provided with below light-shielding material layers, insulating protective layer covers touch sensor and connecting circuit from below.The utility model not cracky, by force functional, intensity is high, and light transmission is good, radiation proof, reflection-proof, and function is very various, meets the user demand of people.But the touch-screen of this invention still exists of poor quality, the problem that yield rate is low.
Summary of the invention
The technical problem that the present invention solves is: propose a kind of one-tenth tablet quality high, percent defective is low, the preparation method of the sapphire touch Panel that production efficiency is high.
In order to solve the problems of the technologies described above, the technical scheme that the present invention proposes is: the preparation method of touch Panel taken the photograph by a kind of sapphire, it is characterized in that, comprises following concrete steps:
Step one, crystal growth; Pure Al is loaded in the crucible of crystal growing furnace
2o
3raw material, be provided with lifting rod that is rotatable and lifting above described crucible, the lower end of lifting rod is folded with the seed crystal in C crystal orientation; To vacuumize in crystal growing furnace and pass into protective gas, be warming up to 2100 ~ 2200 DEG C, make Al
2o
3melting, the liquid level temperature controlling melt is 2055 DEG C, and seed crystal is placed in Al
2o
3the upper surface of melt makes itself and melt contacts, continues 0.5 ~ 1h; After seed crystal and melt are fully stained with profit, lift and rotate seed crystal, thus realizing necking down-expansion shoulder-isodiametric growth; In the necking down stage, the liquid level temperature controlling melt is 2050 DEG C, upwards lifts seed crystal with the speed of 3 ~ 5mm/h, rotates seed crystal with the speed of 45 ~ 48r/min; Expand the shoulder stage, the liquid level temperature controlling melt is 2048 DEG C, upwards lifts seed crystal with the speed of 8 ~ 10mm/h, rotates seed crystal with the speed of 50 ~ 55r/min; In the isometrical stage, the liquid level temperature controlling melt is 2052 DEG C, upwards lifts seed crystal with the speed of 5 ~ 8mm/h, rotates seed crystal with the speed of 48 ~ 50r/min; After crystal growth terminates, the temperature in crystal growing furnace is down to 1580 ~ 1680 DEG C, then carries out annealing in process to crystal, control temperature also continues 18 ~ 22h with the speed slow cooling of 80 ~ 100 DEG C/h, thus obtains crystal;
Step 2, crystal evolution; Orientation is carried out to crystal, then uses excavation machine to carry out evolution, thus obtain C to crystal block;
Step 3, crystal-cut; Adopt carborundum line cutting equipment to cut crystal bar, thus obtain wafer;
Step 4, laser get sheet; Wafer after polishing is put into laser cutting machine and passes into protective gas, wafer is cut into corresponding size by demand;
Step 5, grinding; Grinder is adopted to grind wafer; During grinding, add lapping liquid, abrasive disk is forced into 0.02 ~ 0.022Mpa to wafer, and the rotating speed of abrasive disk is 1000 ~ 1200rpm/min; Grind rear washes of absolute alcohol; Described lapping liquid component comprises: the granular size of 0.5 ~ 2% is the cubic boron nitride powder of 10 ~ 20 μm, the APES of 14 ~ 16%, the glycerine of 4 ~ 6%, the polypropylene glycol 400 of 9 ~ 11%, and all the other are deionized water;
Step 6, chamfering; The skive of Digit Control Machine Tool is adopted to carry out chamfered to the corner of wafer;
Step 7, annealing; Wafer is put into annealing furnace, carry out heating up with the speed of 180 ~ 220 DEG C/h and temperature risen to 1600 DEG C, 2 ~ 6h is incubated respectively at 300 DEG C, 800 DEG C, 1600 DEG C during intensification, then lower the temperature with the temperature of 200 DEG C, be incubated 2 ~ 3h respectively at 1000 DEG C, 500 DEG C during cooling and be cooled to room temperature taking-up;
Step 8, double side chemical polishing; First with absolute ethyl alcohol, wafer is cleaned, then the wafer after cleaning is put into Twp-sided polishing machine and fix; During polishing, add polishing fluid, polishing disk is forced into 0.12 ~ 0.15Mpa to wafer, and the rotating speed of polishing disk is 1000 ~ 1500rpm/min, by after polished wafer washes of absolute alcohol, at room temperature carries out nature cooling; Described polishing fluid component comprises: the granular size of 0.5 ~ 2% is the cubic boron nitride powder of 1 ~ 6 μm, the APES of 14 ~ 16%, the glycerine of 4 ~ 6%, the polypropylene glycol 400 of 9 ~ 11%, the nano silicon of 0.5 ~ 2%, make polishing fluid pH value be 11.0 ~ 13.0 alkaline solution, all the other are deionized water; Alkaline solution is constantly supplemented to keep the pH value of polishing fluid in polishing process;
Step 9, inking; Wafer after plated film is covered hollowed-out board, brushes ink in the edge of wafer and repeat brushing three layers;
Step 10, heat are dried; After the wafer being painted with ink being put into hot baking machine heat baking 2 ~ 3h, air cooling is to room temperature.
Being improved to technique scheme: in described step one, the temperature in crystal growing furnace is down to 1600 DEG C, then annealing in process is carried out to crystal, control temperature also continues 22h with the speed slow cooling of 100 DEG C/h.
Being improved to technique scheme: in described step 3, the diameter of carborundum line is 0.14 ~ 0.16mm, on carborundum line, adamantine particle diameter is 30 ~ 40 μm, carborundum line moves with the speed of 12 ~ 15m/s when cutting, crystal is 0.2 ~ 0.3mm/min relative to the translational speed of carborundum line, constantly cutting liquid is sprayed to carborundum line, containing particle diameter to be the diamond particles of 20 ~ 30 μm and particle diameter the be corundum in granules of 50 ~ 60 μm in described cutting liquid during cutting.
Being improved to technique scheme: in described step 4, the diameter of laser beam is 0.015 ~ 0.02mm, and cutting speed is 3 ~ 5mm/s.
Being improved to technique scheme: in described step 4, described protective gas is nitrogen.
Being improved to technique scheme: in described step 5 is the alumina particle of 3 ~ 6 μm containing particle diameter in described lapping liquid.
Being improved to technique scheme: in described step 7, during intensification, at 300 DEG C of insulation 2h, at 800 DEG C of insulation 3h, at 1600 DEG C of insulation 4h.
Being improved to technique scheme: in described step 8, described alkaline solution is KOH.
Being improved to technique scheme: in described step 8, described polishing fluid pH value is 12.0.
Being improved to technique scheme: in described step 8, polishing disk is forced into 0.135Mpa to wafer.The present invention has positive effect:
(1) touch Panel preparation method of the present invention, first laser gets that sheet grinds again, polishing, the production efficiency of grinding, polishing can be improved, because sapphire hardness is large, larger pressure must be applied during polishing, annealing is conducive to the internal stress that machining operation such as elimination Linear cut, grinding etc. produces before polishing., makes wafer unsuitable cracked when polishing, effectively improves yield rate.
(2) touch Panel preparation method of the present invention, interface temperature during strict control crystal growth, draw high speed, rotary speed and annealing parameter, interface temperature is controlled at 2048 ~ 2052 DEG C, draw high speeds control at 3 ~ 10mm/h, rotary speed controls at 45 ~ 55r/min, annealing temperature controls at 1580 ~ 1680 DEG C (preferably 1600 DEG C), also 18 ~ 22h is continued with the speed slow cooling of 80 ~ 100 DEG C/h, thus make the production capacity of crystal high, defect concentration is low, quality is good, and yield rate is high, can reduce production cost widely.
(3) touch Panel preparation method of the present invention, strict control grinding and the parameter of polishing and the composition of lapping liquid and polishing fluid, be conducive to the efficiency improving grinding and polishing, improve the yield rate of grinding and polishing, the chip architecture prepared is complete, and without physical damnification, surface is fine and smooth, smooth, deformation is little.In lapping liquid and polishing fluid, appropriate cubic boron nitride powder serves as abrasive material, and hardness is high, and wearability is good; The suspension viscosity that APES, glycerine, polypropylene glycol 400 and deionized water are formed and interfacial film stable in properties, abrasive suspension is stablized, and good evenness, can not glue also, is conducive to the quality and the efficiency that improve grinding and polishing.Appropriate APES is a kind of non-ionic surface active agent, its stable in properties, and having dispersion, emulsification, the multiple performance such as wetting, is that suspension obtains the topmost composition of excellent properties; Glycerine proportion is suitable, has good dissolubility with water and organic solution, very applicable as auxiliary dispersants; Polypropylene glycol 400 has emulsification, wetting effect, and can effectively thickening, effectively promotes viscosity and the interfacial film character of suspension.In addition, appropriate Nano-meter SiO_2 is contained in polishing fluid
2, epigranular, good dispersion, planarization efficiency are high.Alkaline solution KOH makes polishing fluid be alkalescence, assists polishing by chemical attack, thus polishing effect is better, and polishing efficiency is better.In order to keep the stability of polishing fluid, thus ensureing efficiency and the quality of polishing, constantly must supplement alkaline solution, maintaining polishing fluid pH value substantially constant.
(4) touch Panel preparation method of the present invention, then drying by brushing three layers of ink, making the edge of wafer light tight, effectively can prevent light from entering from the side of wafer, impact imaging.
(5) touch Panel of the present invention adopts sapphire to be that base material is made, and because sapphire hardness is high, wearability is good, does not make touch Panel easy to wear and scratch; Sapphire C is 11.4 to dielectric constant, and A to M to being 9.4, during crystal growth of the present invention adopt C to seed crystal, ensure that the requirement of touch Panel to dielectric constant.By the fingerprint recognition panel that sapphire touch Panel preparation method of the present invention makes, highly polished, light transmission is good, and optical property is up to standard, and becomes tablet quality high, and percent defective is low, and production efficiency is high, has a extensive future.
Detailed description of the invention
Embodiment 1
The sapphire touch Panel preparation method of the present embodiment specifically comprises the steps:
Step one, crystal growth; Pure Al is loaded in the crucible of crystal growing furnace
2o
3raw material, be provided with lifting rod that is rotatable and lifting above described crucible, the lower end of lifting rod is folded with the seed crystal in C crystal orientation; To vacuumize in crystal growing furnace and pass into protective gas, be warming up to 2200 DEG C, make Al
2o
3melting, the liquid level temperature controlling melt is 2055 DEG C, and seed crystal is placed in Al
2o
3the upper surface of melt makes itself and melt contacts, continues 1h; After seed crystal and melt are fully stained with profit, lift and rotate seed crystal, thus realizing necking down-expansion shoulder-isodiametric growth; In the necking down stage, the liquid level temperature controlling melt is 2050 DEG C, upwards lifts seed crystal with the speed of 5mm/h, rotates seed crystal with the speed of 48r/min; Expand the shoulder stage, the liquid level temperature controlling melt is 2048 DEG C, upwards lifts seed crystal with the speed of 10mm/h, rotates seed crystal with the speed of 55r/min; In the isometrical stage, the liquid level temperature controlling melt is 2052 DEG C, upwards lifts seed crystal with the speed of 8mm/h, rotates seed crystal with the speed of 50r/min; After crystal growth terminates, the temperature in crystal growing furnace is down to 1680 DEG C, then carries out annealing in process to crystal, control temperature also continues 22h with the speed slow cooling of 100 DEG C/h, thus obtains crystal;
Step 2, crystal evolution; Orientation is carried out to crystal, then uses excavation machine to carry out evolution, thus obtain C to crystal block;
Step 3, crystal-cut; Adopt carborundum line cutting equipment to cut crystal bar, thus obtain wafer;
Step 4, laser get sheet; Wafer after polishing is put into laser cutting machine and passes into protective gas, wafer is cut into corresponding size by demand;
Step 5, grinding; Grinder is adopted to grind wafer; During grinding, add lapping liquid, abrasive disk is forced into 0.022Mpa to wafer, and the rotating speed of abrasive disk is 1200rpm/min; Grind rear washes of absolute alcohol; Described lapping liquid component comprises: the granular size of 2% is the cubic boron nitride powder of 20 μm, the APES of 16%, the glycerine of 6%, the polypropylene glycol 400 of 11%, and all the other are deionized water;
Step 6, chamfering; The skive of Digit Control Machine Tool is adopted to carry out chamfered to the corner of wafer;
Step 7, annealing; Wafer is put into annealing furnace, carry out heating up with the speed of 220 DEG C/h and temperature risen to 1600 DEG C, be incubated 6h respectively at 300 DEG C, 800 DEG C, 1600 DEG C during intensification, then lower the temperature with the temperature of 200 DEG C, be incubated 3h respectively at 1000 DEG C, 500 DEG C during cooling and be cooled to room temperature taking-up;
Step 8, double side chemical polishing; First with absolute ethyl alcohol, wafer is cleaned, then the wafer after cleaning is put into Twp-sided polishing machine and fix; During polishing, add polishing fluid, polishing disk is forced into 0.15Mpa to wafer, and the rotating speed of polishing disk is 1500rpm/min, by after polished wafer washes of absolute alcohol, at room temperature carries out nature cooling; Described polishing fluid component comprises: the granular size of 2% is the cubic boron nitride powder of 6 μm, the APES of 16%, the glycerine of 6%, the polypropylene glycol 400 of 11%, the nano silicon of 2%, make polishing fluid pH value be 13.0 alkaline solution, all the other are deionized water; Alkaline solution is constantly supplemented to keep the pH value of polishing fluid in polishing process;
Step 9, inking; Wafer after plated film is covered hollowed-out board, brushes ink in the edge of wafer and repeat brushing three layers;
Step 10, heat are dried; After the wafer being painted with ink being put into hot baking machine heat baking 3h, air cooling is to room temperature.
Embodiment 2
The sapphire touch Panel preparation method of the present embodiment specifically comprises the steps:
Step one, crystal growth; Pure Al is loaded in the crucible of crystal growing furnace
2o
3raw material, be provided with lifting rod that is rotatable and lifting above described crucible, the lower end of lifting rod is folded with the seed crystal in C crystal orientation; To vacuumize in crystal growing furnace and pass into protective gas, be warming up to 2100 DEG C, make Al
2o
3melting, the liquid level temperature controlling melt is 2055 DEG C, and seed crystal is placed in Al
2o
3the upper surface of melt makes itself and melt contacts, continues 0.5h; After seed crystal and melt are fully stained with profit, lift and rotate seed crystal, thus realizing necking down-expansion shoulder-isodiametric growth; In the necking down stage, the liquid level temperature controlling melt is 2050 DEG C, upwards lifts seed crystal with the speed of 3mm/h, rotates seed crystal with the speed of 45r/min; Expand the shoulder stage, the liquid level temperature controlling melt is 2048 DEG C, upwards lifts seed crystal with the speed of 8mm/h, rotates seed crystal with the speed of 50r/min; In the isometrical stage, the liquid level temperature controlling melt is 2052 DEG C, upwards lifts seed crystal with the speed of 5mm/h, rotates seed crystal with the speed of 48r/min; After crystal growth terminates, the temperature in crystal growing furnace is down to 1580 DEG C, then carries out annealing in process to crystal, control temperature also continues 18h with the speed slow cooling of 80 DEG C/h, thus obtains crystal;
Step 2, crystal evolution; Orientation is carried out to crystal, then uses excavation machine to carry out evolution, thus obtain C to crystal block;
Step 3, crystal-cut; Adopt carborundum line cutting equipment to cut crystal bar, thus obtain wafer;
Step 4, laser get sheet; Wafer after polishing is put into laser cutting machine and passes into protective gas, wafer is cut into corresponding size by demand;
Step 5, grinding; Grinder is adopted to grind wafer; During grinding, add lapping liquid, abrasive disk is forced into 0.02Mpa to wafer, and the rotating speed of abrasive disk is 1000rpm/min; Grind rear washes of absolute alcohol; Described lapping liquid component comprises: the granular size of 0.5% is the cubic boron nitride powder of 10 μm, the APES of 14%, the glycerine of 4%, the polypropylene glycol 400 of 9%, and all the other are deionized water;
Step 6, chamfering; The skive of Digit Control Machine Tool is adopted to carry out chamfered to the corner of wafer;
Step 7, annealing; Wafer is put into annealing furnace, carry out heating up with the speed of 180 DEG C/h and temperature risen to 1600 DEG C, be incubated 2h respectively at 300 DEG C, 800 DEG C, 1600 DEG C during intensification, then lower the temperature with the temperature of 200 DEG C, be incubated 2h respectively at 1000 DEG C, 500 DEG C during cooling and be cooled to room temperature taking-up;
Step 8, double side chemical polishing; First with absolute ethyl alcohol, wafer is cleaned, then the wafer after cleaning is put into Twp-sided polishing machine and fix; During polishing, add polishing fluid, polishing disk is forced into 0.12Mpa to wafer, and the rotating speed of polishing disk is 1000rpm/min, by after polished wafer washes of absolute alcohol, at room temperature carries out nature cooling; Described polishing fluid component comprises: the granular size of 0.5% is the cubic boron nitride powder of 1 μm, the APES of 14%, the glycerine of 4%, the polypropylene glycol 400 of 9%, the nano silicon of 0.5%, make polishing fluid pH value be 11.0 alkaline solution, all the other are deionized water; Alkaline solution is constantly supplemented to keep the pH value of polishing fluid in polishing process;
Step 9, inking; Wafer after plated film is covered hollowed-out board, brushes ink in the edge of wafer and repeat brushing three layers;
Step 10, heat are dried; After the wafer being painted with ink being put into hot baking machine heat baking 2h, air cooling is to room temperature.
Embodiment 3
The sapphire touch Panel preparation method of the present embodiment specifically comprises the steps:
Step one, crystal growth; Pure Al is loaded in the crucible of crystal growing furnace
2o
3raw material, be provided with lifting rod that is rotatable and lifting above described crucible, the lower end of lifting rod is folded with the seed crystal in C crystal orientation; To vacuumize in crystal growing furnace and pass into protective gas, be warming up to 2150 DEG C, make Al
2o
3melting, the liquid level temperature controlling melt is 2055 DEG C, and seed crystal is placed in Al
2o
3the upper surface of melt makes itself and melt contacts, continues 1h; After seed crystal and melt are fully stained with profit, lift and rotate seed crystal, thus realizing necking down-expansion shoulder-isodiametric growth; In the necking down stage, the liquid level temperature controlling melt is 2050 DEG C, upwards lifts seed crystal with the speed of 3 ~ 5mm/h, rotates seed crystal with the speed of 46r/min; Expand the shoulder stage, the liquid level temperature controlling melt is 2048 DEG C, upwards lifts seed crystal with the speed of 9mm/h, rotates seed crystal with the speed of 50r/min; In the isometrical stage, the liquid level temperature controlling melt is 2052 DEG C, upwards lifts seed crystal with the speed of 5mm/h, rotates seed crystal with the speed of 48r/min; After crystal growth terminates, the temperature in crystal growing furnace is down to 1600 DEG C, then carries out annealing in process to crystal, control temperature also continues 20h with the speed slow cooling of 90 DEG C/h, thus obtains crystal;
Step 2, crystal evolution; Orientation is carried out to crystal, then uses excavation machine to carry out evolution, thus obtain C to crystal block;
Step 3, crystal-cut; Adopt carborundum line cutting equipment to cut crystal bar, thus obtain wafer;
Step 4, laser get sheet; Wafer after polishing is put into laser cutting machine and passes into protective gas, wafer is cut into corresponding size by demand;
Step 5, grinding; Grinder is adopted to grind wafer; During grinding, add lapping liquid, abrasive disk is forced into 0.02Mpa to wafer, and the rotating speed of abrasive disk is 1100rpm/min; Grind rear washes of absolute alcohol; Described lapping liquid component comprises: the granular size of 1% is the cubic boron nitride powder of 15 μm, the APES of 15%, the glycerine of 5%, the polypropylene glycol 400 of 10%, and all the other are deionized water;
Step 6, chamfering; The skive of Digit Control Machine Tool is adopted to carry out chamfered to the corner of wafer;
Step 7, annealing; Wafer is put into annealing furnace, carry out heating up with the speed of 200 DEG C/h and temperature risen to 1600 DEG C, be incubated 4h respectively at 300 DEG C, 800 DEG C, 1600 DEG C during intensification, then lower the temperature with the temperature of 200 DEG C, be incubated 2.5h respectively at 1000 DEG C, 500 DEG C during cooling and be cooled to room temperature taking-up;
Step 8, double side chemical polishing; First with absolute ethyl alcohol, wafer is cleaned, then the wafer after cleaning is put into Twp-sided polishing machine and fix; During polishing, add polishing fluid, polishing disk is forced into 0.13Mpa to wafer, and the rotating speed of polishing disk is 1200rpm/min, by after polished wafer washes of absolute alcohol, at room temperature carries out nature cooling; Described polishing fluid component comprises: the granular size of 1% is the cubic boron nitride powder of 3 μm, the APES of 15%, the glycerine of 5%, the polypropylene glycol 400 of 10%, the nano silicon of 1%, make polishing fluid pH value be 12.0 alkaline solution, all the other are deionized water; Alkaline solution is constantly supplemented to keep the pH value of polishing fluid in polishing process;
Step 9, inking; Wafer after plated film is covered hollowed-out board, brushes ink in the edge of wafer and repeat brushing three layers;
Step 10, heat are dried; After the wafer being painted with ink being put into hot baking machine heat baking 2h, air cooling is to room temperature.
The preparation method of a kind of sapphire touch Panel of the present invention is not limited to the concrete technical scheme described in above-described embodiment, and all employings are equal to replaces the protection domain that the technical scheme formed is application claims.
Claims (10)
1. a preparation method for sapphire touch Panel, is characterized in that, comprises following concrete steps:
Step one, crystal growth; Pure Al is loaded in the crucible of crystal growing furnace
2o
3raw material, be provided with lifting rod that is rotatable and lifting above described crucible, the lower end of lifting rod is folded with the seed crystal in C crystal orientation; To vacuumize in crystal growing furnace and pass into protective gas, be warming up to 2100 ~ 2200 DEG C, make Al
2o
3melting, the liquid level temperature controlling melt is 2055 DEG C, and seed crystal is placed in Al
2o
3the upper surface of melt makes itself and melt contacts, continues 0.5 ~ 1h; After seed crystal and melt are fully stained with profit, lift and rotate seed crystal, thus realizing necking down-expansion shoulder-isodiametric growth; In the necking down stage, the liquid level temperature controlling melt is 2050 DEG C, upwards lifts seed crystal with the speed of 3 ~ 5mm/h, rotates seed crystal with the speed of 45 ~ 48r/min; Expand the shoulder stage, the liquid level temperature controlling melt is 2048 DEG C, upwards lifts seed crystal with the speed of 8 ~ 10mm/h, rotates seed crystal with the speed of 50 ~ 55r/min; In the isometrical stage, the liquid level temperature controlling melt is 2052 DEG C, upwards lifts seed crystal with the speed of 5 ~ 8mm/h, rotates seed crystal with the speed of 48 ~ 50r/min; After crystal growth terminates, the temperature in crystal growing furnace is down to 1580 ~ 1680 DEG C, then carries out annealing in process to crystal, control temperature also continues 18 ~ 22h with the speed slow cooling of 80 ~ 100 DEG C/h, thus obtains crystal;
Step 2, crystal evolution; Orientation is carried out to crystal, then uses excavation machine to carry out evolution, thus obtain C to crystal block;
Step 3, crystal-cut; Adopt carborundum line cutting equipment to cut crystal bar, thus obtain wafer;
Step 4, laser get sheet; Wafer after polishing is put into laser cutting machine and passes into protective gas, wafer is cut into corresponding size by demand;
Step 5, grinding; Grinder is adopted to grind wafer; During grinding, add lapping liquid, abrasive disk is forced into 0.02 ~ 0.022Mpa to wafer, and the rotating speed of abrasive disk is 1000 ~ 1200rpm/min; Grind rear washes of absolute alcohol; Described lapping liquid component comprises: the granular size of 0.5 ~ 2% is the cubic boron nitride powder of 10 ~ 20 μm, the APES of 14 ~ 16%, the glycerine of 4 ~ 6%, the polypropylene glycol 400 of 9 ~ 11%, and all the other are deionized water;
Step 6, chamfering; The skive of Digit Control Machine Tool is adopted to carry out chamfered to the corner of wafer;
Step 7, annealing; Wafer is put into annealing furnace, carry out heating up with the speed of 180 ~ 220 DEG C/h and temperature risen to 1600 DEG C, 2 ~ 6h is incubated respectively at 300 DEG C, 800 DEG C, 1600 DEG C during intensification, then lower the temperature with the temperature of 200 DEG C, be incubated 2 ~ 3h respectively at 1000 DEG C, 500 DEG C during cooling and be cooled to room temperature taking-up;
Step 8, double side chemical polishing; First with absolute ethyl alcohol, wafer is cleaned, then the wafer after cleaning is put into Twp-sided polishing machine and fix; During polishing, add polishing fluid, polishing disk is forced into 0.12 ~ 0.15Mpa to wafer, and the rotating speed of polishing disk is 1000 ~ 1500rpm/min, by after polished wafer washes of absolute alcohol, at room temperature carries out nature cooling; Described polishing fluid component comprises: the granular size of 0.5 ~ 2% is the cubic boron nitride powder of 1 ~ 6 μm, the APES of 14 ~ 16%, the glycerine of 4 ~ 6%, the polypropylene glycol 400 of 9 ~ 11%, the nano silicon of 0.5 ~ 2%, make polishing fluid pH value be 11.0 ~ 13.0 alkaline solution, all the other are deionized water; Alkaline solution is constantly supplemented to keep the pH value of polishing fluid in polishing process;
Step 9, inking; Wafer after plated film is covered hollowed-out board, brushes ink in the edge of wafer and repeat brushing three layers;
Step 10, heat are dried; After the wafer being painted with ink being put into hot baking machine heat baking 2 ~ 3h, air cooling is to room temperature.
2. the preparation method of sapphire touch Panel according to claim 1, it is characterized in that: in described step one, temperature in crystal growing furnace is down to 1600 DEG C, then carries out annealing in process to crystal, control temperature also continues 22h with the speed slow cooling of 100 DEG C/h.
3. the preparation method of sapphire touch Panel according to claim 1, it is characterized in that: in described step 3, the diameter of carborundum line is 0.14 ~ 0.16mm, on carborundum line, adamantine particle diameter is 30 ~ 40 μm, carborundum line moves with the speed of 12 ~ 15m/s when cutting, crystal is 0.2 ~ 0.3mm/min relative to the translational speed of carborundum line, constantly cutting liquid is sprayed to carborundum line, containing particle diameter to be the diamond particles of 20 ~ 30 μm and particle diameter the be corundum in granules of 50 ~ 60 μm in described cutting liquid during cutting.
4. the preparation method of sapphire touch Panel according to claim 1, it is characterized in that: in described step 4, the diameter of laser beam is 0.015 ~ 0.02mm, and cutting speed is 3 ~ 5mm/s.
5. the preparation method of sapphire touch Panel according to claim 1, it is characterized in that: in described step 4, described protective gas is nitrogen.
6. the preparation method of sapphire touch Panel according to claim 1, is characterized in that: in described step 5, is the alumina particle of 3 ~ 6 μm in described lapping liquid containing particle diameter.
7. the preparation method of sapphire touch Panel according to claim 1, is characterized in that: in described step 7, during intensification, at 300 DEG C of insulation 2h, at 800 DEG C of insulation 3h, at 1600 DEG C of insulation 4h.
8. the preparation method of sapphire touch Panel according to claim 1, it is characterized in that: in described step 8, described alkaline solution is KOH.
9. the preparation method of sapphire touch Panel according to claim 1, it is characterized in that: in described step 8, described polishing fluid pH value is 12.0.
10. the preparation method of sapphire touch Panel according to claim 1, is characterized in that: in described step 8, polishing disk is forced into 0.135Mpa to wafer.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107254717A (en) * | 2017-05-19 | 2017-10-17 | 广东富源科技股份有限公司 | It is a kind of to strengthen the method for Sapphire mobile phone cover plate intensity |
| CN110587842A (en) * | 2019-10-25 | 2019-12-20 | 江苏晶杰光电科技有限公司 | Process for manufacturing silicon carbide single crystal wafer |
| CN111519243A (en) * | 2020-04-28 | 2020-08-11 | 天通银厦新材料有限公司 | Processing method of large-size sapphire panel for unmanned aerial vehicle |
| CN113718339A (en) * | 2021-08-31 | 2021-11-30 | 台州星星光电科技有限公司 | Annealing method of sapphire glass panel |
| CN114101901A (en) * | 2021-12-06 | 2022-03-01 | 苏州晶生新材料有限公司 | Processing technology capable of integrating micro-nano optical structure |
-
2015
- 2015-06-18 CN CN201510339564.2A patent/CN105171941A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107254717A (en) * | 2017-05-19 | 2017-10-17 | 广东富源科技股份有限公司 | It is a kind of to strengthen the method for Sapphire mobile phone cover plate intensity |
| CN110587842A (en) * | 2019-10-25 | 2019-12-20 | 江苏晶杰光电科技有限公司 | Process for manufacturing silicon carbide single crystal wafer |
| CN111519243A (en) * | 2020-04-28 | 2020-08-11 | 天通银厦新材料有限公司 | Processing method of large-size sapphire panel for unmanned aerial vehicle |
| CN113718339A (en) * | 2021-08-31 | 2021-11-30 | 台州星星光电科技有限公司 | Annealing method of sapphire glass panel |
| CN114101901A (en) * | 2021-12-06 | 2022-03-01 | 苏州晶生新材料有限公司 | Processing technology capable of integrating micro-nano optical structure |
| CN114101901B (en) * | 2021-12-06 | 2024-01-05 | 苏州晶生新材料有限公司 | Processing technology capable of integrating micro-nano optical structure |
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