CN105150394B - The production method of sapphire touch Panel - Google Patents
The production method of sapphire touch Panel Download PDFInfo
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- CN105150394B CN105150394B CN201510339584.XA CN201510339584A CN105150394B CN 105150394 B CN105150394 B CN 105150394B CN 201510339584 A CN201510339584 A CN 201510339584A CN 105150394 B CN105150394 B CN 105150394B
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Abstract
The present invention relates to the production method of a kind of sapphire touch Panel, concrete steps include that crystal draws rod, crystal-cut, laser take the operations such as sheet, grinding, chamfering, annealing, twin polishing, inking and baking the affected part after applying some drugs；The production method of the sapphire touch Panel of the present invention becomes tablet quality high, and percent defective is low, and production efficiency is high.
Description
Technical field
The present invention relates to the production method of a kind of sapphire sheet, particularly relate to the production method of a kind of sapphire touch Panel, belong to technical field of sapphire treatment.
Background technology
In the modern life, the electronic product such as mobile phone, panel computer has become as the requisite electronic product of people, and giant-screen has become the development trend of the electronic products such as mobile phone, and the intensity of touch panel and light transmission are just required more and more higher by this.
Along with the progress of science and technology, the touch Panel application of sapphire material is more and more extensive.Sapphire has good thermal characteristics, fabulous electrical characteristic and dielectric property, can at high temperature keep high intensity, excellent hot attribute and transmitance, and anti-chemical corrosion.Being the touch Panel that raw material is made with sapphire, definition is high, third dimension is good, surface damage resistant, and customer satisfaction is high.
Chinese patent literature ZL201420600055.1 discloses a kind of high intensity handset touch panel, including touch screen and housing, the lower surface of touch screen is embedded with colored ribbon, housing uses the mode of parcel to be connected with touch screen, it is provided with projection outside the upper surface of housing, touch screen includes cover-plate glass, sapphire layer, polaroid, touch sensor and insulating protective layer, cover-plate glass upper surface is coated with diamond like carbon film, sapphire layer is located at below cover-plate glass, polaroid is located at below sapphire layer, touch sensor is located in the touch screen district below polaroid, it is provided with light-shielding material layers in non-touch screen district below polaroid, the connection line between touch sensor and FPC it is provided with below light-shielding material layers, insulating protective layer is from following covering touch sensor and connects circuit.This utility model not cracky, functional by force, intensity is high, and light transmission is good, radioprotective, reflection-proof, and function is the most various, meets the use demand of people.But the touch screen of this invention still suffers from of poor quality, the problem that yield rate is low.
Summary of the invention
Present invention solves the technical problem that and be: proposing one and become tablet quality high, percent defective is low, the production method of the sapphire touch Panel that production efficiency is high.
In order to solve above-mentioned technical problem, the technical scheme that the present invention proposes is: the production method of touch Panel taken the photograph by a kind of sapphire, it is characterised in that include step in detail below:
Step one, crystal draw rod；Take C to sapphire crystal, then use and draw rod machine and carry out drawing rod, thus obtain C to crystal bar；
Step 2, crystal-cut；Use carborundum line cutting equipment that crystal bar is cut, thus obtain wafer；
Step 3, laser take sheet；Wafer after polishing is put in laser cutting machine and is passed through protective gas, wafer is cut into by demand correspondingly sized；
Step 4, grinding；Use grinder that wafer is ground；During grinding, adding lapping liquid, abrasive disk is forced into 0.02～0.022Mpa to wafer, and the rotating speed of abrasive disk is 1000～1200rpm/min；Grinding uses washes of absolute alcohol after completing；Described lapping liquid component includes by weight percentage: 0.5～the cubic boron nitride powder that granular size is 10～20 μm of 2%, 14～the alkylphenol polyoxyethylene of 16%, 4～the glycerol of 6%, 9～the polypropylene glycol 400 of 11%, remaining is deionized water；
Step 5, chamfering；The skive using Digit Control Machine Tool carries out chamfered to the corner of wafer；
Step 6, annealing；Place a wafer in annealing furnace, carry out heating up with the speed of 180～220 DEG C/h and temperature is risen to 1600 DEG C, 300 DEG C, 800 DEG C, 1600 DEG C of insulations 2～6h respectively during intensification, then lower the temperature with the temperature of 200 DEG C/h, be incubated 2～3h respectively at 1000 DEG C, 500 DEG C during cooling and be cooled to room temperature taking-up；
Step 7, double side chemical polish；First being carried out wafer with dehydrated alcohol, the wafer after then cleaning is put in Twp-sided polishing machine fixing；During polishing, adding polishing fluid, polishing disk is forced into 0.12～0.15 Mpa to wafer, and the rotating speed of polishing disk is 1000～1500rpm/min, by after polished wafer washes of absolute alcohol, at room temperature carries out natural cooling；Described polishing fluid component includes by weight percentage: 0.5～the cubic boron nitride powder that granular size is 1～6 μm of 2%, 14～the alkylphenol polyoxyethylene of 16%, 4～the glycerol of 6%, 9～the polypropylene glycol 400 of 11%, 0.5～the nano silicon of 2%, the alkaline solution making polishing fluid pH value be 11.0～13.0, remaining is deionized water；Polishing process is continuously replenished alkaline solution to keep the pH value of polishing fluid；
Step 8, inking；Wafer after plated film is covered hollowed-out board, and the edge at wafer brushes ink and repeats to brush three layers；
Step 9, baking the affected part after applying some drugs；Being put into by the wafer being painted with ink in baking the affected part after applying some drugs machine after baking the affected part after applying some drugs 2～3h, air cooling is to room temperature.
Technique scheme is improved to: in described step 2, a diameter of the 0.14 of carborundum line～0.16mm, on carborundum line, the particle diameter of diamond is 30～40 μm, carborundum line cutting time with 12～15m/s speed move, crystal is 0.2～0.3mm/min relative to the translational speed of carborundum line, constantly spray cutting liquid to carborundum line during cutting, described cutting liquid contains the diamond particles that particle diameter is 20～30 μm and the corundum in granules that particle diameter is 50～60 μm.
Being improved to technique scheme: in described step 3, a diameter of the 0.015 of laser beam～0.02mm, cutting speed is 3～5mm/s.
Being improved to technique scheme: in described step 3, described protective gas is nitrogen.
Technique scheme is improved to: in described step 4, containing the alumina particle that particle diameter is 3～6 μm in described lapping liquid.
Technique scheme is improved to: in described step 6, during intensification, is incubated 2h at 300 DEG C, be incubated 3h at 800 DEG C, be incubated 4h at 1600 DEG C.
Being improved to technique scheme: in described step 7, described alkaline solution is KOH.
Being improved to technique scheme: in described step 7, described polishing fluid pH value is 12.0.
Technique scheme is improved to: in described step 7, polishing disk is forced into 0.135Mpa to wafer.The present invention has a positive effect:
(1) the touch Panel production method of the present invention, first laser takes sheet and grinds, polishes, grinding, the production efficiency of polishing can be improved, owing to sapphire hardness is big, bigger pressure must be applied during polishing, annealing is conducive to eliminating internal stress produced by the machining operation such as line cutting, grinding before polishing. so that wafer is unsuitable fragmentation when polishing, is effectively improved yield rate.
(2) the touch Panel production method of the present invention, strictly control grinding and the parameter of polishing and lapping liquid and the composition of polishing fluid, be conducive to improving and grind and the efficiency of polishing, improve and grind and the yield rate of polishing, the chip architecture prepared is complete, and without physical damnification, surface is fine and smooth, smooth, deformation is little.In lapping liquid and polishing fluid, appropriate cubic boron nitride powder serves as abrasive material, and hardness is high, and wearability is good；Alkylphenol polyoxyethylene, glycerol, polypropylene glycol 400 and the suspension viscosity of deionized water formation and interfacial film stable in properties so that abrasive suspension is stable, good evenness, will not glue also, be conducive to improving the quality ground and polish and efficiency.Appropriate alkylphenol polyoxyethylene is a kind of nonionic surfactant, and its stable in properties has the multiple performances such as dispersion, emulsifying, moistening, is that suspension obtains the topmost composition of excellent properties；Glycerol proportion is suitable, has good dissolubility with water and organic solution, is especially suitable for as auxiliary dispersants；Polypropylene glycol 400 has an effect of emulsifying, moistening, and can effectively thickening, effectively promote viscosity and the interfacial film character of suspension.It addition, containing appropriate Nano-meter SiO_2 in polishing fluid2, epigranular, good dispersion, planarization efficiency are high.Alkaline solution KOH makes polishing fluid be alkalescence, and by chemical attack auxiliary polishing, thus polishing effect is more preferable, and polishing efficiency is more preferable.In order to keep the stability of polishing fluid, thus ensure efficiency and the quality of polishing, it is necessary to constantly supplement alkaline solution, maintain polishing fluid pH value to be basically unchanged.
(3) the touch Panel production method of the present invention, is then dried by three layers of ink of brushing so that the edge of wafer is light tight, can be effectively prevented light and enter from the side of wafer, impact imaging.
(4) touch Panel of the present invention uses sapphire to be that base material is made, owing to sapphire hardness is high, wearability is good, make touch Panel the most easy to wear and scratch, sapphire C is 11.4 to dielectric constant, and A to M to being 9.4, the present invention uses C to crystal, it is ensured that the touch Panel requirement to dielectric constant.The fingerprint recognition panel made by the sapphire touch Panel production method of the present invention, highly polished, light transmission is good, and optical property is up to standard, and becomes tablet quality high, and percent defective is low, and production efficiency is high, has a extensive future.
Detailed description of the invention
Embodiment 1
The sapphire touch Panel production method of the present embodiment specifically includes following steps:
Step one, crystal draw rod；Take C to sapphire crystal, then use and draw rod machine and carry out drawing rod, thus obtain C to crystal bar；
Step 2, crystal-cut；Use carborundum line cutting equipment that crystal bar is cut, thus obtain wafer；
Step 3, laser take sheet；Wafer after polishing is put in laser cutting machine and is passed through protective gas, wafer is cut into by demand correspondingly sized；
Step 4, grinding；Use grinder that wafer is ground；During grinding, adding lapping liquid, abrasive disk is forced into 0.022Mpa to wafer, and the rotating speed of abrasive disk is 1200rpm/min；Grinding uses washes of absolute alcohol after completing；Described lapping liquid component includes by weight percentage: the granular size of 2% is the cubic boron nitride powder of 20 μm, the alkylphenol polyoxyethylene of 16%, the glycerol of 6%, the polypropylene glycol 400 of 11%, and remaining is deionized water；
Step 5, chamfering；The skive using Digit Control Machine Tool carries out chamfered to the corner of wafer；
Step 6, annealing；Place a wafer in annealing furnace, carry out heating up with the speed of 220 DEG C/h and temperature is risen to 1600 DEG C, it is incubated 6h respectively at 300 DEG C, 800 DEG C, 1600 DEG C during intensification, then lowers the temperature with the temperature of 200 DEG C/h, be incubated 3h respectively at 1000 DEG C, 500 DEG C during cooling and be cooled to room temperature taking-up；
Step 7, double side chemical polish；First being carried out wafer with dehydrated alcohol, the wafer after then cleaning is put in Twp-sided polishing machine fixing；During polishing, adding polishing fluid, polishing disk is forced into 0.15 Mpa to wafer, and the rotating speed of polishing disk is 1500rpm/min, by after polished wafer washes of absolute alcohol, at room temperature carries out natural cooling；Described polishing fluid component includes by weight percentage: the granular size of 2% is the cubic boron nitride powder of 6 μm, the alkylphenol polyoxyethylene of 16%, the glycerol of 6%, the polypropylene glycol 400 of 11%, the nano silicon of 2%, the alkaline solution making polishing fluid pH value be 13.0, remaining is deionized water；Polishing process is continuously replenished alkaline solution to keep the pH value of polishing fluid；
Step 8, inking；Wafer after plated film is covered hollowed-out board, and the edge at wafer brushes ink and repeats to brush three layers；
Step 9, baking the affected part after applying some drugs；Being put in baking the affected part after applying some drugs machine after baking the affected part after applying some drugs 3h by the wafer being painted with ink, air cooling is to room temperature.
Embodiment 2
The sapphire touch Panel production method of the present embodiment specifically includes following steps:
Step one, crystal draw rod；Take C to sapphire crystal, then use and draw rod machine and carry out drawing rod, thus obtain C to crystal bar；
Step 2, crystal-cut；Use carborundum line cutting equipment that crystal bar is cut, thus obtain wafer；
Step 3, laser take sheet；Wafer after polishing is put in laser cutting machine and is passed through protective gas, wafer is cut into by demand correspondingly sized；
Step 4, grinding；Use grinder that wafer is ground；During grinding, adding lapping liquid, abrasive disk is forced into 0.02Mpa to wafer, and the rotating speed of abrasive disk is 1000rpm/min；Grinding uses washes of absolute alcohol after completing；Described lapping liquid component includes by weight percentage: the granular size of 0.5% is the cubic boron nitride powder of 10 μm, the alkylphenol polyoxyethylene of 14%, the glycerol of 4%, the polypropylene glycol 400 of 9%, and remaining is deionized water；Step 5, chamfering；The skive using Digit Control Machine Tool carries out chamfered to the corner of wafer；
Step 6, annealing；Place a wafer in annealing furnace, carry out heating up with the speed of 180 DEG C/h and temperature is risen to 1600 DEG C, it is incubated 2h respectively at 300 DEG C, 800 DEG C, 1600 DEG C during intensification, then lowers the temperature with the temperature of 200 DEG C/h, be incubated 2h respectively at 1000 DEG C, 500 DEG C during cooling and be cooled to room temperature taking-up；
Step 7, double side chemical polish；First being carried out wafer with dehydrated alcohol, the wafer after then cleaning is put in Twp-sided polishing machine fixing；During polishing, adding polishing fluid, polishing disk is forced into 0.12Mpa to wafer, and the rotating speed of polishing disk is 1000rpm/min, by after polished wafer washes of absolute alcohol, at room temperature carries out natural cooling；Described polishing fluid component includes by weight percentage: the granular size of 0.5% is the cubic boron nitride powder of 1 μm, the alkylphenol polyoxyethylene of 14%, the glycerol of 4%, the polypropylene glycol 400 of 9%, the nano silicon of 0.5%, the alkaline solution making polishing fluid pH value be 11.0, remaining is deionized water；Polishing process is continuously replenished alkaline solution to keep the pH value of polishing fluid；
Step 8, inking；Wafer after plated film is covered hollowed-out board, and the edge at wafer brushes ink and repeats to brush three layers；
Step 9, baking the affected part after applying some drugs；Being put in baking the affected part after applying some drugs machine after baking the affected part after applying some drugs 2h by the wafer being painted with ink, air cooling is to room temperature.
Embodiment 3
The sapphire touch Panel production method of the present embodiment specifically includes following steps:
Step one, crystal draw rod；Take C to sapphire crystal, then use and draw rod machine and carry out drawing rod, thus obtain C to crystal bar；
Step 2, crystal-cut；Use carborundum line cutting equipment that crystal bar is cut, thus obtain wafer；
Step 3, laser take sheet；Wafer after polishing is put in laser cutting machine and is passed through protective gas, wafer is cut into by demand correspondingly sized；
Step 4, grinding；Use grinder that wafer is ground；During grinding, adding lapping liquid, abrasive disk is forced into 0.02Mpa to wafer, and the rotating speed of abrasive disk is 1100rpm/min；Grinding uses washes of absolute alcohol after completing；Described lapping liquid component includes by weight percentage: the granular size of 1% is the cubic boron nitride powder of 15 μm, the alkylphenol polyoxyethylene of 15%, the glycerol of 5%, the polypropylene glycol 400 of 10%, and remaining is deionized water；
Step 5, chamfering；The skive using Digit Control Machine Tool carries out chamfered to the corner of wafer；
Step 6, annealing；Place a wafer in annealing furnace, carry out heating up with the speed of 200 DEG C/h and temperature is risen to 1600 DEG C, it is incubated 4h respectively at 300 DEG C, 800 DEG C, 1600 DEG C during intensification, then lowers the temperature with the temperature of 200 DEG C/h, be incubated 2.5h respectively at 1000 DEG C, 500 DEG C during cooling and be cooled to room temperature taking-up；
Step 7, double side chemical polish；First being carried out wafer with dehydrated alcohol, the wafer after then cleaning is put in Twp-sided polishing machine fixing；During polishing, adding polishing fluid, polishing disk is forced into 0.13 Mpa to wafer, and the rotating speed of polishing disk is 1200rpm/min, by after polished wafer washes of absolute alcohol, at room temperature carries out natural cooling；Described polishing fluid component includes by weight percentage: the granular size of 1% is the cubic boron nitride powder of 3 μm, the alkylphenol polyoxyethylene of 15%, the glycerol of 5%, the polypropylene glycol 400 of 10%, the nano silicon of 1% so that polishing fluid pH value is the alkaline solution of 12.0, remaining is deionized water；Polishing process is continuously replenished alkaline solution to keep the pH value of polishing fluid；
Step 8, inking；Wafer after plated film is covered hollowed-out board, and the edge at wafer brushes ink and repeats to brush three layers；
Step 9, baking the affected part after applying some drugs；Being put in baking the affected part after applying some drugs machine after baking the affected part after applying some drugs 2h by the wafer being painted with ink, air cooling is to room temperature.
The production method of the sapphire touch Panel of the present invention is not limited to the concrete technical scheme described in above-described embodiment, and the technical scheme that all employing equivalents are formed is the protection domain of application claims.
Claims (9)
1. the production method of a sapphire touch Panel, it is characterised in that include step in detail below:
Step one, crystal draw rod；Take C to sapphire crystal, then use and draw rod machine and carry out drawing rod, thus obtain C to crystal bar；
Step 2, crystal-cut；Use carborundum line cutting equipment that crystal bar is cut, thus obtain wafer；
Step 3, laser take sheet；Wafer after polishing is put in laser cutting machine and is passed through protective gas, wafer is cut into by demand correspondingly sized；
Step 4, grinding；Use grinder that wafer is ground；During grinding, adding lapping liquid, abrasive disk is forced into 0.02～0.022Mpa to wafer, and the rotating speed of abrasive disk is 1000～1200rpm/min；Grinding uses washes of absolute alcohol after completing；Described lapping liquid component includes by weight percentage: 0.5～the cubic boron nitride powder that granular size is 10～20 μm of 2%, 14～the alkylphenol polyoxyethylene of 16%, 4～the glycerol of 6%, 9～the polypropylene glycol 400 of 11%, remaining is deionized water；
Step 5, chamfering；The skive using Digit Control Machine Tool carries out chamfered to the corner of wafer；
Step 6, annealing；Place a wafer in annealing furnace, carry out heating up with the speed of 180～220 DEG C/h and temperature is risen to 1600 DEG C, 300 DEG C, 800 DEG C, 1600 DEG C of insulations 2～6h respectively during intensification, then lower the temperature with the temperature of 200 DEG C/h, be incubated 2～3h respectively at 1000 DEG C, 500 DEG C during cooling and be cooled to room temperature taking-up；
Step 7, double side chemical polish；First being carried out wafer with dehydrated alcohol, the wafer after then cleaning is put in Twp-sided polishing machine fixing；During polishing, adding polishing fluid, polishing disk is forced into 0.12～0.15 Mpa to wafer, and the rotating speed of polishing disk is 1000～1500rpm/min, by after polished wafer washes of absolute alcohol, at room temperature carries out natural cooling；Described polishing fluid component includes by weight percentage: 0.5～the cubic boron nitride powder that granular size is 1～6 μm of 2%, 14～the alkylphenol polyoxyethylene of 16%, 4～the glycerol of 6%, 9～the polypropylene glycol 400 of 11%, 0.5～the nano silicon of 2%, the alkaline solution making polishing fluid pH value be 11.0～13.0, remaining is deionized water；Polishing process is continuously replenished alkaline solution to keep the pH value of polishing fluid；
Step 8, inking；Wafer after plated film is covered hollowed-out board, and the edge at wafer brushes ink and repeats to brush three layers；
Step 9, baking the affected part after applying some drugs；Being put into by the wafer being painted with ink in baking the affected part after applying some drugs machine after baking the affected part after applying some drugs 2～3h, air cooling is to room temperature.
The production method of sapphire touch Panel the most according to claim 1, it is characterized in that: in described step 2, a diameter of the 0.14 of carborundum line～0.16mm, on carborundum line, the particle diameter of diamond is 30～40 μm, carborundum line cutting time with 12～15m/s speed move, crystal is 0.2～0.3mm/min relative to the translational speed of carborundum line, constantly spray cutting liquid to carborundum line during cutting, described cutting liquid contains the diamond particles that particle diameter is 20～30 μm and the corundum in granules that particle diameter is 50～60 μm.
The production method of sapphire touch Panel the most according to claim 1, it is characterised in that: in described step 3, a diameter of the 0.015 of laser beam～0.02mm, cutting speed is 3～5mm/s.
The production method of sapphire touch Panel the most according to claim 1, it is characterised in that: in described step 3, described protective gas is nitrogen.
The production method of sapphire touch Panel the most according to claim 1, it is characterised in that: in described step 4, containing the alumina particle that particle diameter is 3～6 μm in described lapping liquid.
The production method of sapphire touch Panel the most according to claim 1, it is characterised in that: in described step 6, during intensification, it is incubated 2h at 300 DEG C, is incubated 3h at 800 DEG C, be incubated 4h at 1600 DEG C.
The production method of sapphire touch Panel the most according to claim 1, it is characterised in that: in described step 7, described alkaline solution is KOH.
The production method of sapphire touch Panel the most according to claim 1, it is characterised in that: in described step 7, described polishing fluid pH value is 12.0.
The production method of sapphire touch Panel the most according to claim 1, it is characterised in that: in described step 7, polishing disk is forced into 0.135Mpa to wafer.
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| CN103213061B (en) * | 2012-01-18 | 2015-06-03 | 张卫兴 | Processing technic of sapphire substrate slice special for patterned substrate |
| CN103019453A (en) * | 2012-12-30 | 2013-04-03 | 金龙机电（东莞）有限公司 | Production technology for ultrathin touch screen |
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| CN104088017A (en) * | 2014-06-20 | 2014-10-08 | 常州市好利莱光电科技有限公司 | Sapphire mobile phone panel processing method |
| CN104526889A (en) * | 2014-11-19 | 2015-04-22 | 四川省三台水晶电子有限公司 | Method for manufacturing quartz crystal wafer for high-precision piezoelectric transducer |
| CN104669106B (en) * | 2015-02-10 | 2017-01-25 | 盐城工学院 | Double-surface grinding and double-surface polishing high-efficiency ultraprecise processing method for large-sized A-directional sapphire mobile phone screen |
| CN104669454B (en) * | 2015-02-11 | 2016-11-30 | 浙江星星科技股份有限公司 | A kind of processing method of Sapphire mobile phone windows be protected screen with holes |
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