CN105150031B - The production method of sapphire Rimless touch Panel - Google Patents
The production method of sapphire Rimless touch Panel Download PDFInfo
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- CN105150031B CN105150031B CN201510339565.7A CN201510339565A CN105150031B CN 105150031 B CN105150031 B CN 105150031B CN 201510339565 A CN201510339565 A CN 201510339565A CN 105150031 B CN105150031 B CN 105150031B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention relates to a kind of production method of sapphire Rimless touch Panel, specific steps draw rod, crystal-cut, laser including crystal and take the processes such as piece, grinding, bevelling, annealing, twin polishing, inking and heat baking；The production method of the sapphire Rimless touch Panel of the present invention is high into tablet quality, and percent defective is low, and production efficiency is high.
Description
Technical field
The present invention relates to a kind of production method of sapphire sheet, more particularly to a kind of life of sapphire Rimless touch Panel
Production method, belongs to technical field of sapphire treatment.
Background technology
In the modern life, the electronic product such as mobile phone, tablet personal computer has become the essential electronic product of people, and big
Screen has turned into the development trend of the electronic products such as mobile phone, and just the intensity to touch panel and translucency require increasingly for this
It is high.
With the development of science and technology the touch Panel of sapphire material is using more and more extensive.Sapphire has heat well
Characteristic, fabulous electrical characteristic and dielectric property, high intensity, excellent hot attribute and transmitance can be kept at high temperature, and
And anti-chemical corrosion.The touch Panel made of sapphire is raw material, definition is high, third dimension is good, surface damage resistant, consumer
Satisfaction is high.
Chinese patent literature ZL201420600055.1 discloses a kind of high intensity handset touch panel, including touch-screen and shell
Body, the lower surface of touch-screen are embedded with colored ribbon, and housing is connected by the way of parcel with touch-screen, is set on the outside of the upper surface of housing
There is projection, touch-screen includes cover-plate glass, sapphire layer, polaroid, touch sensor and insulating protective layer, cover-plate glass upper table
Covered with DLC film, sapphire layer is located at below cover-plate glass in face, and polaroid is located at below sapphire layer, touch sensing
Device is located in the touch screen area below polaroid, is provided with light-shielding material layers in the non-touch screen area below polaroid, under light-shielding material layers
Side is provided with the connection line between touch sensor and FPC, and insulating protective layer is electric from following covering touch sensor and connection
Road.The utility model not cracky, functional, intensity is high, and translucency is good, and radiation proof, reflection-proof, function is very various, full
The use demand of sufficient people.But the touch-screen of the invention still suffers from of poor quality, the problem of yield rate is low.
The content of the invention
Present invention solves the technical problem that it is：It is proposed that one kind is high into tablet quality, percent defective is low, the high sapphire of production efficiency
The production method of Rimless touch Panel.
In order to solve the above-mentioned technical problem, technical scheme proposed by the present invention is：A kind of sapphire takes the photograph the life of touch Panel
Production method, it is characterised in that including step in detail below：
Step 1: crystal draws rod；C is taken to sapphire crystal, then carries out drawing rod using drawing rod machine, so as to obtain C to crystalline substance
Rod；
Step 2: crystal-cut；Crystal bar is cut using carborundum line cutting equipment, so as to obtain chip；
Step 3: laser takes piece；Chip after polishing is put into laser cutting machine and is passed through protective gas, chip is pressed
Demand cuts into correspondingly sized；
Step 4: grinding；Chip is ground using grinder；During grinding, lapping liquid is added, abrasive disk adds to chip
0.02~0.022Mpa is depressed into, the rotating speed of abrasive disk is 1000~1200rpm/min；Washes of absolute alcohol is used after the completion of grinding；
The lapping liquid component includes：0.5~2% granular size is 10~20 μm of cubic boron nitride powder, 14~16% alkyl
Phenol polyethenoxy ether, 4~6% glycerine, 9~11% polypropylene glycol 400, remaining is deionized water；
Step 5: bevelling；Bevelling processing is carried out to the surrounding of chip and corner using the skive of Digit Control Machine Tool；
Step 6: annealing；Place a wafer into annealing furnace, heated up with 180~220 DEG C/h speed and rise to temperature
1600 DEG C, 2~6h is incubated respectively in 300 DEG C, 800 DEG C, 1600 DEG C during heating, is then cooled with 200 DEG C of temperature, is cooled
When 1000 DEG C, 500 DEG C respectively insulation 2~3h be cooled to room temperature take out；
Step 7: double side chemical polishes；First chip is cleaned with absolute ethyl alcohol, is then put into the chip after cleaning
It is fixed in Twp-sided polishing machine；During polishing, polishing fluid is added, polishing disk is forced into 0.12~0.15 Mpa to chip, polishing disk
Rotating speed is 1000~1500rpm/min, by after polished chip washes of absolute alcohol, carries out natural cooling at room temperature；
The polishing fluid component includes：0.5~2% granular size is 1~6 μm of cubic boron nitride powder, 14~16% alkyl phenol
APEO, 4~6% glycerine, the nano silicon of 9~11% polypropylene glycol 400,0.5~2% so that polishing fluid PH
It is worth the alkaline solution for 11.0~13.0, remaining is deionized water；Alkaline solution is continuously replenished in polishing process to keep polishing
The pH value of liquid；
Step 8: inking；Chip after plated film is covered into hollowed-out board, ink is brushed in the edge of chip and repeats to brush
Apply three layers；
Step 9: heat is dried；The chip for being painted with ink is put into hot baking machine after 2~3h of heat baking, is air-cooled to room temperature.
Above-mentioned technical proposal is improved to：In the step 2, a diameter of 0.14~0.16mm of carborundum line, Buddha's warrior attendant
The particle diameter of diamond is 30~40 μm on sand line, and carborundum line is moved in cutting with 12~15m/s speed, crystal phase for
The translational speed of carborundum line is 0.2~0.3mm/min, constantly sprays cutting liquid, the cutting liquid to carborundum line during cutting
In contain the diamond particles that particle diameter is 20~30 μm and corundum in granules that particle diameter is 50~60 μm.
Above-mentioned technical proposal is improved to：In the step 3, a diameter of 0.015~0.02mm of laser beam, cutting
Speed is 3~5mm/s.
Above-mentioned technical proposal is improved to：In the step 3, the protective gas is nitrogen.
Above-mentioned technical proposal is improved to：In the step 4, the oxygen that particle diameter is 3~6 μm is contained in the lapping liquid
Change alumina particles.
Above-mentioned technical proposal is improved to：In the step 6, during heating, 2h are incubated at 300 DEG C, in 800 DEG C of insulations
3h, 4h is incubated at 1600 DEG C.
Above-mentioned technical proposal is improved to：In the step 7, the alkaline solution is KOH.
Above-mentioned technical proposal is improved to：In the step 7, the polishing fluid pH value is 12.0.
Above-mentioned technical proposal is improved to：In the step 7, polishing disk is forced into 0.135Mpa to chip.The present invention
With positive effect：
（1）The touch Panel production method of the present invention, first laser takes piece to grind, polish again, can improve grinding, polish
Production efficiency, larger pressure must be applied because sapphire hardness is big, during polishing, annealing before polishing is advantageous to eliminate line
The internal stress caused by machining operation such as cutting, grinding so that chip unsuitable fragmentation in polishing, effectively improve finished product
Rate.
（2）The touch Panel production method of the present invention, parameter and lapping liquid and the polishing of strict control grinding and polishing
The composition of liquid, be advantageous to improve the efficiency of grinding and polishing, improve the yield rate of grinding and polishing, the chip architecture prepared is complete
Whole, no physical damnification, surface is fine and smooth, and smooth, deformation is small.In lapping liquid and polishing fluid, appropriate cubic boron nitride powder serves as
Abrasive material, hardness is high, and wearability is good；The suspension that APES, glycerine, polypropylene glycol 400 and deionized water are formed
Viscosity and interface film character are stable so that abrasive suspension is stable, good evenness, will not glue simultaneously, is advantageous to improve grinding and polishing
Quality and efficiency.Appropriate APES is a kind of nonionic surfactant, and its property is stable, has and divides
The multiple performances such as scattered, emulsification, wetting, it is that suspension obtains the most important composition of excellent properties；Glycerine proportion is suitable, with water and having
Machine solution has good dissolubility, is especially suitable for as auxiliary dispersants；Polypropylene glycol 400 has the function that emulsification, wetting,
And it can effectively thicken, effectively lift the viscosity and interface film character of suspension.In addition, contain appropriate nanometer in polishing fluid
SiO2, epigranular, good dispersion, planarization efficiency are high.Alkaline solution KOH causes polishing fluid for alkalescence, to pass through chemical attack
Auxiliary polishing, so as to which polishing effect is more preferable, polishing efficiency is more preferable.In order to keep the stability of polishing fluid, so as to ensure polishing
Efficiency and quality, it is necessary to constantly supplement alkaline solution, maintain polishing fluid pH value to be basically unchanged.
（3）The touch Panel production method of the present invention, by brushing three layers of ink and then drying so that the edge of chip is not
It printing opacity, can effectively prevent light from entering from the side of chip, imaging is impacted.
（4）The touch Panel of the present invention uses sapphire to be made up of base material, and because sapphire hardness is high, wearability is good, makes
Touch Panel is not easy to wear and scratch, sapphire C is 11.4 to dielectric constant, and A is to being 9.4, the present invention uses with M
C ensure that requirement of the touch Panel to dielectric constant to crystal.Pass through the sapphire Rimless touch Panel producer of the present invention
Fingerprint recognition panel made of method, highly polished, translucency is good, and optical property is up to standard, and high into tablet quality, and percent defective is low, raw
Efficiency high is produced, is had a extensive future.
Embodiment
Embodiment 1
The sapphire Rimless touch Panel production method of the present embodiment specifically comprises the following steps：
Step 1: crystal draws rod；C is taken to sapphire crystal, then carries out drawing rod using drawing rod machine, so as to obtain crystal bar；
Step 2: crystal-cut；Crystal bar is cut using carborundum line cutting equipment, so as to obtain chip；
Step 3: laser takes piece；Chip after polishing is put into laser cutting machine and is passed through protective gas, chip is pressed
Demand cuts into correspondingly sized；
Step 4: grinding；Chip is ground using grinder；During grinding, lapping liquid is added, abrasive disk adds to chip
0.022Mpa is depressed into, the rotating speed of abrasive disk is 1200rpm/min；Washes of absolute alcohol is used after the completion of grinding；The lapping liquid group
Dividing includes：2% granular size is 20 μm of cubic boron nitride powder, 16% APES, 6% glycerine, 11%
Polypropylene glycol 400, remaining is deionized water；
Step 5: bevelling；Bevelling processing is carried out to the surrounding of chip and corner using the skive of Digit Control Machine Tool；
Step 6: annealing；Place a wafer into annealing furnace, heated up with 220 DEG C/h speed and temperature is risen to 1600
DEG C, be incubated 6h respectively in 300 DEG C, 800 DEG C, 1600 DEG C during heating, then cooled with 200 DEG C of temperature, during cooling
1000 DEG C, 500 DEG C are incubated 3h and are cooled to room temperature taking-up respectively；
Step 7: double side chemical polishes；First chip is cleaned with absolute ethyl alcohol, is then put into the chip after cleaning
It is fixed in Twp-sided polishing machine；During polishing, polishing fluid is added, polishing disk is forced into 0.15 Mpa to chip, and the rotating speed of polishing disk is
1500rpm/min, by after polished chip washes of absolute alcohol, carry out natural cooling at room temperature；The polishing fluid group
Dividing includes：2% granular size is 6 μm of cubic boron nitride powder, 16% APES, 6% glycerine, 11%
Polypropylene glycol 400,2% nano silicon so that polishing fluid pH value is 13.0 alkaline solution, and remaining is deionized water；Throw
Alkaline solution is continuously replenished in photoreduction process to keep the pH value of polishing fluid；
Step 8: inking；Chip after plated film is covered into hollowed-out board, ink is brushed in the edge of chip and repeats to brush
Apply three layers；
Step 9: heat is dried；The chip for being painted with ink is put into hot baking machine after heat baking 3h, is air-cooled to room temperature.
Embodiment 2
The sapphire Rimless touch Panel production method of the present embodiment specifically comprises the following steps：
Step 1: crystal draws rod；C is taken to sapphire crystal, then carries out drawing rod using drawing rod machine, so as to obtain C to crystalline substance
Rod；
Step 2: crystal-cut；Crystal bar is cut using carborundum line cutting equipment, so as to obtain chip；
Step 3: laser takes piece；Chip after polishing is put into laser cutting machine and is passed through protective gas, chip is pressed
Demand cuts into correspondingly sized；
Step 4: grinding；Chip is ground using grinder；During grinding, lapping liquid is added, abrasive disk adds to chip
0.02Mpa is depressed into, the rotating speed of abrasive disk is 1000rpm/min；Washes of absolute alcohol is used after the completion of grinding；The lapping liquid component
Including：0.5% granular size is 10 μm of cubic boron nitride powder, 14% APES, 4% glycerine, 9%
Polypropylene glycol 400, remaining is deionized water；
Step 5: bevelling；Bevelling processing is carried out to the surrounding of chip and corner using the skive of Digit Control Machine Tool；
Step 6: annealing；Place a wafer into annealing furnace, heated up with 180 DEG C/h speed and temperature is risen to 1600
DEG C, be incubated 2h respectively in 300 DEG C, 800 DEG C, 1600 DEG C during heating, then cooled with 200 DEG C of temperature, during cooling
1000 DEG C, 500 DEG C are incubated 2h and are cooled to room temperature taking-up respectively；
Step 7: double side chemical polishes；First chip is cleaned with absolute ethyl alcohol, is then put into the chip after cleaning
It is fixed in Twp-sided polishing machine；During polishing, polishing fluid is added, polishing disk is forced into 0.12 Mpa to chip, and the rotating speed of polishing disk is
1000rpm/min, by after polished chip washes of absolute alcohol, carry out natural cooling at room temperature；The polishing fluid group
Dividing includes：0.5% granular size is 1 μm of cubic boron nitride powder, 14% APES, 4% glycerine, 9%
Polypropylene glycol 400,0.5% nano silicon so that polishing fluid pH value be 11.0 alkaline solution, remaining is deionization
Water；Alkaline solution is continuously replenished in polishing process to keep the pH value of polishing fluid；
Step 8: inking；Chip after plated film is covered into hollowed-out board, ink is brushed in the edge of chip and repeats to brush
Apply three layers；
Step 9: heat is dried；The chip for being painted with ink is put into hot baking machine after heat baking 2h, is air-cooled to room temperature.
Embodiment 3
The sapphire Rimless touch Panel production method of the present embodiment specifically comprises the following steps：
Step 1: crystal draws rod；C is taken to sapphire crystal, then carries out drawing rod using drawing rod machine, so as to obtain C to crystalline substance
Rod；
Step 2: crystal-cut；Crystal bar is cut using carborundum line cutting equipment, so as to obtain chip；
Step 3: laser takes piece；Chip after polishing is put into laser cutting machine and is passed through protective gas, chip is pressed
Demand cuts into correspondingly sized；
Step 4: grinding；Chip is ground using grinder；During grinding, lapping liquid is added, abrasive disk adds to chip
0.022Mpa is depressed into, the rotating speed of abrasive disk is 1100rpm/min；Washes of absolute alcohol is used after the completion of grinding；The lapping liquid group
Dividing includes：1% granular size is 15 μm of cubic boron nitride powder, 15% APES, 5% glycerine, 10%
Polypropylene glycol 400, remaining is deionized water；
Step 5: bevelling；Bevelling processing is carried out to the surrounding of chip and corner using the skive of Digit Control Machine Tool；
Step 6: annealing；Place a wafer into annealing furnace, heated up with 200 DEG C/h speed and temperature is risen to 1600
DEG C, be incubated 4h respectively in 300 DEG C, 800 DEG C, 1600 DEG C during heating, then cooled with 200 DEG C of temperature, during cooling
1000 DEG C, 500 DEG C are incubated 2.5h and are cooled to room temperature taking-up respectively；
Step 7: double side chemical polishes；First chip is cleaned with absolute ethyl alcohol, is then put into the chip after cleaning
It is fixed in Twp-sided polishing machine；During polishing, polishing fluid is added, polishing disk is forced into 0.13 Mpa to chip, and the rotating speed of polishing disk is
1200rpm/min, by after polished chip washes of absolute alcohol, carry out natural cooling at room temperature；The polishing fluid group
Dividing includes：1% granular size is 3 μm of cubic boron nitride powder, 15% APES, 5% glycerine, 10%
Polypropylene glycol 400,1% nano silicon so that polishing fluid pH value is 12.0 alkaline solution, and remaining is deionized water；Throw
Alkaline solution is continuously replenished in photoreduction process to keep the pH value of polishing fluid；
Step 8: inking；Chip after plated film is covered into hollowed-out board, ink is brushed in the edge of chip and repeats to brush
Apply three layers；
Step 9: heat is dried；The chip for being painted with ink is put into hot baking machine after heat baking 2h, is air-cooled to room temperature.
The production method of the sapphire Rimless touch Panel of the present invention is not limited to the specific skill described in above-described embodiment
Art scheme, all technical schemes using equivalent substitution formation are the protection domain of application claims.
Claims (9)
1. a kind of production method of sapphire Rimless touch Panel, it is characterised in that including step in detail below：
Step 1: crystal draws rod；C is taken to sapphire crystal, then carries out drawing rod using drawing rod machine, so as to obtain C to crystal bar；
Step 2: crystal-cut；Crystal bar is cut using carborundum line cutting equipment, so as to obtain chip；
Step 3: laser takes piece；Chip after polishing is put into laser cutting machine and is passed through protective gas, by chip on demand
Cut into correspondingly sized；
Step 4: grinding；Chip is ground using grinder；During grinding, lapping liquid is added, abrasive disk is forced into chip
0.02~0.022Mpa, the rotating speed of abrasive disk is 1000~1200rpm/min；Washes of absolute alcohol is used after the completion of grinding；It is described
Lapping liquid component includes：0.5~2% granular size is 10~20 μm of cubic boron nitride powder, and 14~16% alkyl phenol gathers
Oxygen vinethene, 4~6% glycerine, 9~11% polypropylene glycol 400, remaining is deionized water；
Step 5: bevelling；Bevelling processing is carried out to the surrounding of chip and corner using the skive of Digit Control Machine Tool；
Step 6: annealing；Place a wafer into annealing furnace, heated up with 180~220 DEG C/h speed and temperature is risen to 1600
DEG C, be incubated 2~6h respectively in 300 DEG C, 800 DEG C, 1600 DEG C during heating, then cooled with 200 DEG C of temperature, during cooling
1000 DEG C, 500 DEG C are incubated 2~3h and are cooled to room temperature taking-up respectively；
Step 7: double side chemical polishes；First chip is cleaned with absolute ethyl alcohol, is then put into the chip after cleaning two-sided
It is fixed in polishing machine；During polishing, polishing fluid is added, polishing disk is forced into 0.12~0.15 Mpa, the rotating speed of polishing disk to chip
For 1000~1500rpm/min, by after polished chip washes of absolute alcohol, carry out natural cooling at room temperature；It is described
Polishing fluid component includes：0.5~2% granular size is 1~6 μm of cubic boron nitride powder, 14~16% alkyl phenol polyoxy
Vinethene, 4~6% glycerine, the nano silicon of 9~11% polypropylene glycol 400,0.5~2% so that polishing fluid pH value is
11.0~13.0 alkaline solution, remaining is deionized water；Alkaline solution is continuously replenished in polishing process to keep polishing fluid
PH value；
Step 8: inking；Chip after plated film is covered into hollowed-out board, ink is brushed in the edge of chip and repeats to brush three
Layer；
Step 9: heat is dried；The chip for being painted with ink is put into hot baking machine after 2~3h of heat baking, is air-cooled to room temperature.
2. the production method of sapphire Rimless touch Panel according to claim 1, it is characterised in that：The step 2
In, a diameter of 0.14~0.16mm of carborundum line, the particle diameter of diamond is 30~40 μm on carborundum line, and carborundum line is being cut
Moved when cutting with 12~15m/s speed, crystal phase is 0.2~0.3mm/min for the translational speed of carborundum line, during cutting
Cutting liquid constantly is sprayed to carborundum line, is containing the diamond particles and particle diameter that particle diameter is 20~30 μm in the cutting liquid
50~60 μm of corundum in granules.
3. the production method of sapphire Rimless touch Panel according to claim 1, it is characterised in that：The step 3
In, a diameter of 0.015~0.02mm of laser beam, cutting speed is 3~5mm/s.
4. the production method of sapphire Rimless touch Panel according to claim 1, it is characterised in that：The step 3
In, the protective gas is nitrogen.
5. the production method of sapphire Rimless touch Panel according to claim 1, it is characterised in that：The step 4
In, the alumina particle that particle diameter is 3~6 μm is contained in the lapping liquid.
6. the production method of sapphire Rimless touch Panel according to claim 1, it is characterised in that：The step 6
In, during heating, 2h are incubated at 300 DEG C, 3h are incubated at 800 DEG C, 4h are incubated at 1600 DEG C.
7. the production method of sapphire Rimless touch Panel according to claim 1, it is characterised in that：The step 7
In, the alkaline solution is KOH.
8. the production method of sapphire Rimless touch Panel according to claim 1, it is characterised in that：The step 7
In, the polishing fluid pH value is 12.0.
9. the production method of sapphire Rimless touch Panel according to claim 1, it is characterised in that：The step 7
In, polishing disk is forced into 0.135Mpa to chip.
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| CN109500721A (en) * | 2018-12-22 | 2019-03-22 | 浙江宏泰精密科技有限公司 | A kind of metal polishing procedure |
| CN111774943B (en) * | 2020-07-17 | 2022-03-01 | 成都东骏激光股份有限公司 | Vertical crystal processing tool and manufacturing method |
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| CN102337082A (en) * | 2011-07-11 | 2012-02-01 | 河南科技学院 | Water-based 6H-SiC monocrystalline substrate chemical mechanical polishing (CMP) solution and preparation method thereof |
| CN102634850A (en) * | 2012-03-31 | 2012-08-15 | 江苏鑫和泰光电科技有限公司 | Annealing method of sapphire wafer |
| CN103374754A (en) * | 2012-04-17 | 2013-10-30 | 鑫晶钻科技股份有限公司 | Sapphire material and preparation method thereof |
| CN102977851B (en) * | 2012-12-21 | 2014-11-05 | 河南科技学院 | Grinding paste for 4H-SiC monocrystal wafer grinding process and preparation method thereof |
| CN103698824B (en) * | 2013-12-27 | 2015-11-18 | 贵州蓝科睿思技术研发中心 | A kind of sapphire coated cover-plate and job operation thereof |
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