CN102634850A - Annealing method of sapphire wafer - Google Patents
Annealing method of sapphire wafer Download PDFInfo
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- CN102634850A CN102634850A CN2012100972362A CN201210097236A CN102634850A CN 102634850 A CN102634850 A CN 102634850A CN 2012100972362 A CN2012100972362 A CN 2012100972362A CN 201210097236 A CN201210097236 A CN 201210097236A CN 102634850 A CN102634850 A CN 102634850A
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Abstract
The invention relates to an annealing method of a sapphire wafer, belonging to the technical field of the machining of a crystalline material. The invention provides the annealing method of the high-quality sapphire wafer, comprising the following steps of: raising the temperature on the sapphire wafer which is cut, milled or polished by sections and keeping the heat for a period of time at 900-1600 DEG C; carrying out annealing treatment on the sapphire wafer so as to eliminate machining stress for cutting, milling or polishing; and rotating the wafer at a heat-preservation phase to uniformly anneal the whole wafer, so as to eliminate the influence that a temperature field of an annealing furnace is not uniform. The machining stress of the wafer annealed by the method is basically eliminated and the whole wafer is uniformly annealed; and the warping degree of the annealed wafer is small.
Description
Technical field
The present invention relates to the processing technique field of crystalline material, especially a kind of method for annealing of sapphire wafer.
Background technology
Sapphire crystal (Al
2O
3) be indigo plant, the most frequently used substrate material of white light LEDs luminescent material GaN of super brightness, and of heap of stone brilliant crystal mass and employed Sapphire Substrate (substrate) suface processing quality of GaN is closely related, especially surface topography, the warpage degree close relation of patterned substrate (PSS) and wafer; Simultaneously; The warpage degree of wafer is excessive, can be when plain film be cooked GaN crystalline substance of heap of stone, and plain film and epitaxial film come off; PSS is difficult to focus on, and influences the extension quality.Grind at the cutting of Sapphire Substrate, twin grinding and single face, in the polishing process; Although the machining stress of part can discharge in following one manufacturing procedure; But this stress relief is unordered release, and the machining stress that does not discharge simultaneously can be gathered in wafer surface, influences the warpage degree of sapphire wafer; Serious warpage can produce fragmentation in road, the back course of processing, influences whole machining process round-robin wafer quality.
Sapphire Substrate is in the course of processing; Necessary annealed processing is to reduce machining stress, and present annealing process adopts a step to be warming up to annealing temperature, is not incubated through process; Machining stress discharges inhomogeneous; And sapphire wafer is motionless all the time in lehre, and the temperature field of stove discharges the homogeneity influence greatly to processing, and is more obvious to large-sized sapphire wafer influence.
Summary of the invention
The technical problem that the present invention will solve is: propose a kind of high-quality sapphire wafer method for annealing, be applicable to sapphire cutting blade, twin grinding sheet, monolithic abrasive sheet and polished section.This invention can be so that the machining stress that sapphire produces in cutting, grinding and polishing process release evenly, fully, can reduce the influence that the temperature field discharges machining stress.
The technical scheme that the present invention adopted is: a kind of method for annealing of sapphire wafer; Be in annealing process; Heat up stage by stage, be incubated, and in annealing process, suitably rotate sapphire wafer; The machining stress that this method makes sapphire in cutting, grinding and polishing process, produce discharges even, abundant, can reduce the influence that the temperature field discharges machining stress.This method has overcome many shortcomings of prior art, and particular content is following:
1, sapphire wafer is packed in the lehre, directly be warming up to 150 ℃～300 ℃ in low temperature zone fast, be incubated 2～4 hours, this TRT in stage is 1～2 hour;
2, in the cold zone insulating process,, lots of wafers is heated evenly with sapphire wafer Rotate 180 degree;
3, after insulation for some time, be warming up to 600 ℃～800 ℃ of middle temperature areas through low temperature, be incubated 5～10 hours, this TRT in stage is 4～6 hours;
4, in middle warm area insulating process,, lots of wafers is heated evenly with sapphire wafer Rotate 180 degree;
5, temperature is warming up to 900 ℃～1600 ℃ of high-temperature areas after insulation for some time in the process, is incubated 10～20 hours, and this TRT in stage is 6～20 hours.
6, in the insulating process of high-temperature zone,, lots of wafers is heated evenly with sapphire wafer Rotate 180 degree;
7, after soak finishes, be cooled to room temperature with per hour 10 ℃～50 ℃ and come out of the stove.
The invention has the beneficial effects as follows: cutting, grind or polishing after sapphire wafer heat up stage by stage and be incubated for some time to 900 ℃～1600 ℃; Sapphire wafer is carried out anneal; With the machining stress of eliminating cutting, grinding or polish; And, make entire wafer annealing evenly at holding stage rotation wafer, eliminate the uneven influence in lehre temperature field; Adopt this method annealed wafer process stress basically eliminate, entire wafer annealing is even, and the chip warpage degree after the annealing is little.
Embodiment
Embodiment 1
Cold zone heats up (1): 4 inches sapphire wafers after will cutting are packed in the special frock, put into the lehre burner hearth, are warming up to 200 ℃ with 3 ℃/minute temperature rise rates from room temperature.Cold zone insulation (2): temperature keep 200 ℃ 3 hours.Cold zone rotation (3): temperature rise to 200 ℃ and be incubated 1.5 hours after, rotation annealing frock 180 degree.Middle warm area heats up (4): after the low temperature insulation finishes, be warming up to 700 ℃ with 2 ℃/minute temperature rise rates from 200 ℃.In warm area insulation (5): temperature keep 700 ℃ 8 hours.In warm area rotation (6): temperature rise to 700 ℃ and be incubated 4 hours after, rotation annealing frock 180 degree.Heating up (7) in the high-temperature zone: after middle temperature insulation finishes, is warming up to 1000 ℃ with 0.5 ℃/minute temperature rise rate from 700 ℃.High-temperature zone insulation (8): temperature keep 1000 ℃ 16 hours.High-temperature zone rotation (9): temperature rise to 1000 ℃ and be incubated 8 hours after, rotation annealing frock 180 degree.Cooling (10): soak is cooled to room temperature with 10 ℃/hour rate of temperature fall after finishing, and opens burner hearth, takes out wafer.
4 inches wafers after the annealing, through test, whole angularity is less than 5 microns, the machining stress basically eliminate.
Embodiment 2:
Cold zone heats up (1): 4 inches sapphire wafers after the twin grinding are packed in the special frock, put into the lehre burner hearth, be warming up to 300 ℃ with 3 ℃/minute temperature rise rates from room temperature.Cold zone insulation (2): temperature keep 300 ℃ 4 hours.Cold zone rotation (3): temperature rise to 200 ℃ and be incubated 2 hours after, rotation annealing frock 180 degree.Middle warm area heats up (4): after the low temperature insulation finishes, be warming up to 800 ℃ with 2 ℃/minute temperature rise rates from 200 ℃.In warm area insulation (5): temperature keep 800 ℃ 6 hours.In warm area rotation (6): temperature rise to 800 ℃ and be incubated 3 hours after, rotation annealing frock 180 degree.Heating up (7) in the high-temperature zone: after middle temperature insulation finishes, is warming up to 1100 ℃ with 0.5 ℃/minute temperature rise rate from 800 ℃.High-temperature zone insulation (8): temperature keep 1100 ℃ 12 hours.High-temperature zone rotation (9): temperature rise to 1100 ℃ and be incubated 6 hours after, rotation annealing frock 180 degree.Cooling (10): soak is cooled to room temperature with 30 ℃/hour rate of temperature fall after finishing, and opens burner hearth, takes out wafer.
The two mill of 4 inches sapphires after annealing wafers, whole angularity are less than 5 microns, the machining stress basically eliminate.
Embodiment 3:
Cold zone heats up (1): 4 inches sapphire wafers behind single barreling mill are packed in the special frock, put into the lehre burner hearth, be warming up to 200 ℃ with 3 ℃/minute temperature rise rates from room temperature.Cold zone insulation (2): temperature keep 200 ℃ 3 hours.Cold zone rotation (3): temperature rise to 200 ℃ and be incubated 1.5 hours after, rotation annealing frock 180 degree.Middle warm area heats up (4): after the low temperature insulation finishes, be warming up to 800 ℃ with 2.5 ℃/minute temperature rise rates from 200 ℃.In warm area insulation (5): temperature keep 800 ℃ 10 hours.In warm area rotation (6): temperature rise to 800 ℃ and be incubated 5 hours after, rotation annealing frock 180 degree.Heating up (7) in the high-temperature zone: after middle temperature insulation finishes, is warming up to 1600 ℃ with 1 ℃/minute temperature rise rate from 800 ℃.High-temperature zone insulation (8): temperature keep 1600 ℃ 18 hours.High-temperature zone rotation (9): temperature rise to 1600 ℃ and be incubated 9 hours after, rotation annealing frock 180 degree.Cooling (10): soak is cooled to room temperature with 50 ℃/hour rate of temperature fall after finishing, and opens burner hearth, takes out wafer.
4 inches sapphire lists mill wafers after the annealing, whole angularity are less than 5 microns, the machining stress basically eliminate.
What describe in the above specification sheets is embodiment of the present invention; Various not illustrating constitutes restriction to flesh and blood of the present invention; Under the those of ordinary skill of technical field after having read specification sheets can to before described embodiment make an amendment or be out of shape, and do not deviate from essence of an invention and scope.
Claims (3)
1. the method for annealing of a sapphire wafer is characterized in that may further comprise the steps:
(1) sapphire wafer is packed in the lehre, directly be warming up to 150 ℃～300 ℃ in low temperature zone fast, be incubated 2～4 hours, this TRT in stage is 1～2 hour;
(2) after insulation for some time, be warming up to 600 ℃～800 ℃ of middle temperature areas through low temperature, be incubated 5～10 hours, this TRT in stage is 4～6 hours;
(3) temperature is warming up to 900 ℃～1600 ℃ of high-temperature areas after insulation for some time in the process, is incubated 10～20 hours, and this stage soaking time is 6～20 hours.
2. the method for annealing of a kind of sapphire wafer as claimed in claim 1 is characterized in that: in the heating and heat preservation process, rotate the frock of loading Sapphire Substrate in good time, the annealed wafer is rotated in lehre.
3. the method for annealing of a kind of sapphire wafer as claimed in claim 1 is characterized in that: after the soak end, be cooled to room temperature with per hour 10 ℃～50 ℃ and come out of the stove.
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| CN2012100972362A CN102634850A (en) | 2012-03-31 | 2012-03-31 | Annealing method of sapphire wafer |
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|---|---|---|---|
| CN2012100972362A CN102634850A (en) | 2012-03-31 | 2012-03-31 | Annealing method of sapphire wafer |
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|---|---|---|---|---|
| CN102817083A (en) * | 2012-09-21 | 2012-12-12 | 上海应用技术学院 | Annealing method for SiC wafer |
| CN102945897A (en) * | 2012-11-10 | 2013-02-27 | 长治虹源科技晶片技术有限公司 | Processing method for sapphire substrate with graphic substrate |
| CN103643300A (en) * | 2013-11-26 | 2014-03-19 | 浙江上城科技有限公司 | Annealing method applied to sapphire processing |
| CN104451890A (en) * | 2014-11-25 | 2015-03-25 | 蓝思科技（长沙）有限公司 | Sapphire reinforcing method |
| WO2015057348A1 (en) * | 2013-10-16 | 2015-04-23 | Gtat Corporation | A method of annealing sapphire |
| CN104755660A (en) * | 2012-10-31 | 2015-07-01 | 蓝宝石科技株式会社 | Heat treatment method and heat treatment device for single crystal sapphire |
| CN105140362A (en) * | 2015-06-25 | 2015-12-09 | 江苏苏创光学器材有限公司 | Production method of sapphire LED filament substrate |
| CN105154968A (en) * | 2015-06-18 | 2015-12-16 | 江苏苏创光学器材有限公司 | Preparation method for sapphire LED filament substrate |
| CN105150031A (en) * | 2015-06-18 | 2015-12-16 | 江苏苏创光学器材有限公司 | Production method for sapphire frameless touch screen panel |
| CN105200526A (en) * | 2015-10-14 | 2015-12-30 | 盐城工学院 | Gallium oxide wafer stress relieving annealing method |
| CN105291287A (en) * | 2014-06-05 | 2016-02-03 | 兆远科技股份有限公司 | Sapphire wafer machining method and intermediate in machining method |
| CN105332060A (en) * | 2015-10-30 | 2016-02-17 | 江苏吉星新材料有限公司 | Secondary sapphire wafer annealing method |
| CN105401220A (en) * | 2014-09-12 | 2016-03-16 | 浙江上城科技有限公司 | Method and equipment for eliminating stress of sapphire thin sheet |
| CN107097148A (en) * | 2017-06-13 | 2017-08-29 | 江苏吉星新材料有限公司 | A kind of sorting technique after sapphire substrate sheet section |
| CN107254717A (en) * | 2017-05-19 | 2017-10-17 | 广东富源科技股份有限公司 | It is a kind of to strengthen the method for Sapphire mobile phone cover plate intensity |
| CN107407006A (en) * | 2015-03-26 | 2017-11-28 | 京瓷株式会社 | The manufacture method of sapphire part and sapphire part |
| CN107475778A (en) * | 2017-09-03 | 2017-12-15 | 湖北天宝光电科技有限公司 | Strengthen the method for annealing and annealing fixture of the anti-drop intensity of Sapphire mobile phone eyeglass |
| CN108239789A (en) * | 2018-03-30 | 2018-07-03 | 北京理工大学 | A kind of heat treatment process of large-size sapphire optical crystal |
| US10483101B2 (en) | 2016-06-30 | 2019-11-19 | Corning Incorporated | Glass-based article with engineered stress distribution and method of making same |
| CN110491774A (en) * | 2019-08-19 | 2019-11-22 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of surface treatment method of Sapphire Substrate and its crucible used |
| CN110512287A (en) * | 2019-09-12 | 2019-11-29 | 江苏吉星新材料有限公司 | A kind of 4 inch sapphire crystal method for annealing |
| CN110744732A (en) * | 2019-09-03 | 2020-02-04 | 福建晶安光电有限公司 | Manufacturing process of high-performance substrate |
| US10580666B2 (en) | 2016-07-01 | 2020-03-03 | Corning Incorporated | Carrier substrates for semiconductor processing |
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| CN102817083A (en) * | 2012-09-21 | 2012-12-12 | 上海应用技术学院 | Annealing method for SiC wafer |
| CN104755660A (en) * | 2012-10-31 | 2015-07-01 | 蓝宝石科技株式会社 | Heat treatment method and heat treatment device for single crystal sapphire |
| US9988741B2 (en) * | 2012-10-31 | 2018-06-05 | Sapphire Technology Co., Ltd. | Heat treatment method and heat treatment device for single crystal sapphire |
| CN102945897A (en) * | 2012-11-10 | 2013-02-27 | 长治虹源科技晶片技术有限公司 | Processing method for sapphire substrate with graphic substrate |
| CN102945897B (en) * | 2012-11-10 | 2016-09-07 | 长治虹源科技晶片技术有限公司 | Processing method for the sapphire substrate of patterned substrate |
| WO2015057348A1 (en) * | 2013-10-16 | 2015-04-23 | Gtat Corporation | A method of annealing sapphire |
| CN103643300A (en) * | 2013-11-26 | 2014-03-19 | 浙江上城科技有限公司 | Annealing method applied to sapphire processing |
| CN103643300B (en) * | 2013-11-26 | 2017-04-12 | 浙江上城科技有限公司 | Annealing method applied to sapphire processing |
| CN105291287A (en) * | 2014-06-05 | 2016-02-03 | 兆远科技股份有限公司 | Sapphire wafer machining method and intermediate in machining method |
| CN105291287B (en) * | 2014-06-05 | 2017-09-08 | 兆远科技股份有限公司 | Intermediate in sapphire wafer processing method and its processing technology |
| CN105401220A (en) * | 2014-09-12 | 2016-03-16 | 浙江上城科技有限公司 | Method and equipment for eliminating stress of sapphire thin sheet |
| CN105401220B (en) * | 2014-09-12 | 2018-07-17 | 浙江汇锋塑胶科技有限公司 | A kind of method and apparatus for eliminating sapphire wafer stress |
| CN104451890A (en) * | 2014-11-25 | 2015-03-25 | 蓝思科技（长沙）有限公司 | Sapphire reinforcing method |
| CN104451890B (en) * | 2014-11-25 | 2017-06-06 | 蓝思科技（长沙）有限公司 | A kind of sapphire intensifying method |
| CN107407006A (en) * | 2015-03-26 | 2017-11-28 | 京瓷株式会社 | The manufacture method of sapphire part and sapphire part |
| CN105150031A (en) * | 2015-06-18 | 2015-12-16 | 江苏苏创光学器材有限公司 | Production method for sapphire frameless touch screen panel |
| CN105154968A (en) * | 2015-06-18 | 2015-12-16 | 江苏苏创光学器材有限公司 | Preparation method for sapphire LED filament substrate |
| CN105140362A (en) * | 2015-06-25 | 2015-12-09 | 江苏苏创光学器材有限公司 | Production method of sapphire LED filament substrate |
| CN105200526A (en) * | 2015-10-14 | 2015-12-30 | 盐城工学院 | Gallium oxide wafer stress relieving annealing method |
| CN105200526B (en) * | 2015-10-14 | 2017-11-28 | 盐城工学院 | A kind of gallium oxide wafer stress relief annealing method |
| CN105332060A (en) * | 2015-10-30 | 2016-02-17 | 江苏吉星新材料有限公司 | Secondary sapphire wafer annealing method |
| US10483101B2 (en) | 2016-06-30 | 2019-11-19 | Corning Incorporated | Glass-based article with engineered stress distribution and method of making same |
| US10580666B2 (en) | 2016-07-01 | 2020-03-03 | Corning Incorporated | Carrier substrates for semiconductor processing |
| CN107254717A (en) * | 2017-05-19 | 2017-10-17 | 广东富源科技股份有限公司 | It is a kind of to strengthen the method for Sapphire mobile phone cover plate intensity |
| CN107097148B (en) * | 2017-06-13 | 2019-03-15 | 江苏吉星新材料有限公司 | A kind of classification method after sapphire substrate sheet slice |
| CN107097148A (en) * | 2017-06-13 | 2017-08-29 | 江苏吉星新材料有限公司 | A kind of sorting technique after sapphire substrate sheet section |
| CN107475778A (en) * | 2017-09-03 | 2017-12-15 | 湖北天宝光电科技有限公司 | Strengthen the method for annealing and annealing fixture of the anti-drop intensity of Sapphire mobile phone eyeglass |
| CN108239789A (en) * | 2018-03-30 | 2018-07-03 | 北京理工大学 | A kind of heat treatment process of large-size sapphire optical crystal |
| CN110491774A (en) * | 2019-08-19 | 2019-11-22 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of surface treatment method of Sapphire Substrate and its crucible used |
| CN110491774B (en) * | 2019-08-19 | 2021-10-26 | 中国科学院苏州纳米技术与纳米仿生研究所 | Surface treatment method of sapphire substrate and crucible used by surface treatment method |
| CN110744732A (en) * | 2019-09-03 | 2020-02-04 | 福建晶安光电有限公司 | Manufacturing process of high-performance substrate |
| CN110744732B (en) * | 2019-09-03 | 2022-04-15 | 福建晶安光电有限公司 | Manufacturing process of high-performance substrate |
| CN110512287A (en) * | 2019-09-12 | 2019-11-29 | 江苏吉星新材料有限公司 | A kind of 4 inch sapphire crystal method for annealing |
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