CN102634850A - Annealing method of sapphire wafer - Google Patents

Annealing method of sapphire wafer Download PDF

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CN102634850A
CN102634850A CN 201210097236 CN201210097236A CN102634850A CN 102634850 A CN102634850 A CN 102634850A CN 201210097236 CN201210097236 CN 201210097236 CN 201210097236 A CN201210097236 A CN 201210097236A CN 102634850 A CN102634850 A CN 102634850A
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temperature
wafer
annealing
hours
sapphire
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CN 201210097236
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Chinese (zh)
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储耀卿
朱文超
王善建
石剑舫
石晓鑫
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江苏鑫和泰光电科技有限公司
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Abstract

The invention relates to an annealing method of a sapphire wafer, belonging to the technical field of the machining of a crystalline material. The invention provides the annealing method of the high-quality sapphire wafer, comprising the following steps of: raising the temperature on the sapphire wafer which is cut, milled or polished by sections and keeping the heat for a period of time at 900-1600 DEG C; carrying out annealing treatment on the sapphire wafer so as to eliminate machining stress for cutting, milling or polishing; and rotating the wafer at a heat-preservation phase to uniformly anneal the whole wafer, so as to eliminate the influence that a temperature field of an annealing furnace is not uniform. The machining stress of the wafer annealed by the method is basically eliminated and the whole wafer is uniformly annealed; and the warping degree of the annealed wafer is small.

Description

一种蓝宝石晶片的退火方法 A method of annealing the sapphire wafer

技术领域 FIELD

[0001] 本发明涉及晶体材料的加工技术领域,尤其是一种蓝宝石晶片的退火方法。 [0001] The present invention relates to crystalline materials processing technology, and in particular is a method of annealing the sapphire wafer.

背景技术 Background technique

[0002] 蓝宝石晶体(Al2O3)是超高亮度的蓝、白光LED发光材料GaN最常用的衬底材料, 而GaN嘉晶的晶体质量与所使用的监宝石衬底(基板)表面加工质量密切相关,尤其是图形化衬底(PSS)与晶片的表面形貌、翘曲程度联系密切,同时,晶片的翘曲程度过大,会在平片做GaN磊晶时,平片与外延薄膜脱落,PSS难以聚焦,影响外延品质。 [0002] Sapphire crystal (Al2O3) of high brightness blue, white LED emitting GaN material most commonly used substrate material is closely related (substrate) surface quality monitoring quality of the GaN crystal sapphire substrate with a Ka crystal used especially-patterned substrate (PSS) contact the surface topography, warpage of the wafer in close, while the degree of warpage of the wafer is too large, when the GaN epitaxial would do in a flat sheet, the flat sheet and the epitaxial film off, PSS difficult to focus, affect the quality of epitaxial. 在蓝宝石衬底的切害I]、双面研磨以及单面研磨、抛光过程中,尽管部分的加工应力会在下一道加工工序释放,但是这种应力释放是无序释放,同时未释放的加工应力会在晶片表面集聚,影响蓝宝石晶片的翘曲程度,严重的翘曲会在后道加工过程产生破片,影响整个加工循环的晶片质量。 In the I-cut sapphire substrate damage], double-side polishing and single-side polishing, polishing, machining stress although a lower portion of the processing step will release, but the release of this stress release is disordered while processing stress unreleased will gather the wafer surface, the influence of the warpage of the sapphire wafer, severe warpage generated fragments after processing in the process, affect the quality of the wafer processing cycle.

[0003] 蓝宝石衬底在加工过程中,必须经过退火处理以降低加工应力,目前的退火工艺采用一步升温至退火温度,未经过过程保温,加工应力释放不均匀,且蓝宝石晶片在退火炉中始终不动,炉子的温度场对加工释放均匀性影响极大,对大尺寸的蓝宝石晶片影响更为明显。 [0003] sapphire substrate in the process, must be annealed to reduce the machining stress, one-step annealing process of the current raised to the annealing temperature, the process has not been heat, uneven stress release process, and the sapphire wafer is always in an annealing furnace It does not move, the release of a uniform temperature field of the furnace a great influence on the processing, the wafer size large impact on sapphire more apparent.

发明内容 SUMMARY

[0004] 本发明要解决的技术问题是:提出一种高质量的蓝宝石晶片退火方法,适用于对蓝宝石切割片、双面研磨片、单片研磨片和抛光片。 [0004] The present invention is to solve the technical problem are: to provide a high quality sapphire wafer annealing method, suitable for cutting the sapphire substrate, double-side polishing sheet, monolithic abrasive sheet and polished. 该发明可以使得蓝宝石在切割、研磨和抛光过程中产生的加工应力释放均匀、充分,可以减小温度场对加工应力释放的影响。 The invention can be made of sapphire processing stress generated in the cutting, grinding and polishing uniformity is released sufficiently, the temperature field can reduce the impact on the stress relief process.

[0005] 本发明所采用的技术方案为:一种蓝宝石晶片的退火方法,是在退火过程中,分阶段升温、保温,并在退火过程中,适当旋转蓝宝石晶片,该方法使得蓝宝石在切割、研磨和抛光过程中产生的加工应力释放均匀、充分,可以减小温度场对加工应力释放的影响。 [0005] The technical proposal of the present invention is: A method for annealing the sapphire wafer in the annealing process, staged heating, insulation, and during the annealing process, the appropriate rotation of the sapphire wafer, the sapphire so that the cutting method, machining stress generated during grinding and polishing uniformity is released sufficiently, the temperature field can reduce the impact on the stress relief process. 该方法克服了现有技术的诸多缺点,具体内容如下: This method overcomes the disadvantages of the prior art, as follows:

[0006] I、将蓝宝石晶片装入退火炉中,快速直接升温至低温度区域150°C〜300°C,保温2〜4小时,此阶段升温时间为I〜2小时; [0006] I, the sapphire wafer is loaded into the annealing furnace, rapid heating directly to a low-temperature region 150 ° C~300 ° C, ~ 4 hours incubation, the heating time at this stage is I~2 hours;

[0007] 2、在低温区保温过程中,将蓝宝石晶片旋转180度,使整批晶片受热均匀; [0007] 2, incubated during low temperature region, the sapphire wafer is rotated 180 degrees so that the entire batch of wafers heated evenly;

[0008] 3、经过低温保温一段时间后,升温至中温区域600°C〜800°C,保温5〜10小时,此阶段升温时间为4〜6小时; [0008] 3, after the low temperature heat for some time, heating temperature region to 600 ° C~800 ° C, holding 5 to 10 hours, at this stage the heating time is 4 ~ 6 hours;

[0009] 4、在中温区保温过程中,将蓝宝石晶片旋转180度,使整批晶片受热均匀; [0009] 4, during the incubation temperature region, the sapphire wafer is rotated 180 degrees so that the entire batch of wafers heated evenly;

[0010] 5、经过中温保温一段时间后,升温至高温区域900°C〜1600°C,保温10〜20小时,此阶段升温时间为6〜20小时。 [0010] 5, the temperature insulation after a period of time, raised to a high temperature region of 900 ° C~1600 ° C, incubated 10-20 hours, at this stage the heating time is 6~20 hours.

[0011] 6、在高温区保温过程中,将蓝宝石晶片旋转180度,使整批晶片受热均匀; [0011] 6, the high temperature region during the incubation, the sapphire wafer is rotated 180 degrees so that the entire batch of wafers heated evenly;

[0012] 7、高温保温结束后,以每小时10°C〜50°C降温至室温出炉。 [0012] 7, the end of the incubation temperature to 10 [deg.] C per hour to cool to C~50 [deg.] Rt baked.

[0013] 本发明的有益效果是:切割、研磨或抛光后的蓝宝石晶片分阶段升温并且保温一段时间至900°C〜1600°C,对蓝宝石晶片进行退火处理,以消除切割、研磨或抛光的加工应力,并在保温阶段旋转晶片,使整个晶片退火均匀,消除退火炉温度场不均的影响;采用该方法退火的晶片加工应力基本消除,整个晶片退火均匀,退火后的晶片翘曲度小。 [0013] Advantageous effects of the present invention are: sapphire wafer cutting, grinding or polishing after the heating and holding time in stages to 900 ° C~1600 ° C, sapphire wafer is annealed to eliminate cutting, grinding or polishing machining stress, and the rotation of the wafer holding stage, so that the entire wafer uniformly annealing, an annealing furnace to eliminate the influence of the temperature field variation; wafer processing stress annealing method using the basic elimination, uniform annealing the entire wafer, a small degree of warpage after annealing the wafer .

具体实施方式 Detailed ways

[0014] 实施例I [0014] Example I

[0015] 低温区升温(I):将切割后的4英寸蓝宝石晶片装入特殊工装内,放入退火炉炉膛,以:TC /分钟的升温速率从室温升温至200°C。 [0015] The low temperature heating (the I): after cutting the sapphire wafer 4 inches loaded into special tooling, into an annealing furnace hearth to: heating rate TC / min from room temperature to 200 ° C. 低温区保温⑵:温度保持200°C 3个小时。 Low temperature insulation ⑵: maintaining the temperature 200 ° C 3 hours. 低温区旋转(3):在温度升至200°C并且保温I. 5小时后,旋转退火工装180度。 Rotating the low-temperature region (3): After the temperature was raised to 200 ° C and incubated I. 5 hours, and 180 degrees rotation of the annealing fixture. 中温区升温(4):低温保温结束后,以2°C/分钟的升温速率从200°C升温至700°C。 Heating medium temperature zone (4): After incubation low temperature, at a heating rate of 2 ° C / min temperature rise from 200 ° C to 700 ° C. 中温区保温(5):温度保持700°C 8个小时。 Mid-temperature insulation (5): the temperature was maintained 700 ° C 8 hours. 中温区旋转(6):在温度升至700°C并且保温4小时后,旋转退火工装180度。 In the temperature region of rotation (6): After the temperature was raised to 700 ° C and for 4 hours, 180 ° rotation of the annealing fixture. 高温区升温(7):中温保温结束后,以0. 5°C /分钟的升温速率从700°C升温至1000°C。 High temperature heating zone (7): After the incubation temperature, a temperature rising rate of 0. 5 ° C / min temperature rise from 700 ° C to 1000 ° C. 高温区保温(8):温度保持1000°C 16个小时。 Insulation high temperature region (8): maintaining the temperature 1000 ° C 16 hours. 高温区旋转(9):在温度升至1000°C并且保温8小时后,旋转退火工装180度。 Rotating the high temperature zone (9): After the temperature was raised to 1000 ° C and incubated for 8 hours annealing tooling rotation 180 degrees. 降温(10):高温保温结束后,以10°C /小时的降温速率降温至室温,打开炉膛,取出晶片。 Cooling (10): after the incubation temperature at a cooling rate of 10 ° C / hr cooling to ambient temperature, the furnace is opened, the wafer is removed.

[0016] 退火后的4英寸晶片,经测试,整个翘曲度小于5微米,加工应力基本消除。 [0016] 4-inch wafer after annealing, has been tested, the entire warpage less than 5 microns, substantially eliminating process stress.

[0017] 实施例2: [0017] Example 2:

[0018] 低温区升温(I):将双面研磨后的4英寸蓝宝石晶片装入特殊工装内,放入退火炉炉膛,以:TC /分钟的升温速率从室温升温至300°C。 [0018] The low temperature heating (the I): The double-side polishing after the sapphire wafer 4 inches loaded into special tooling, into an annealing furnace hearth to: heating rate TC / min from room temperature to 300 ° C. 低温区保温⑵:温度保持300°C 4个小时。 Low temperature insulation ⑵: holding temperature 300 ° C 4 hours. 低温区旋转(3):在温度升至200°C并且保温2小时后,旋转退火工装180度。 Rotating the low-temperature region (3): After the temperature was raised to 200 ° C and for 2 hours, 180 ° rotation of the annealing fixture. 中温区升温(4):低温保温结束后,以2°C/分钟的升温速率从200°C升温至800°C。 Heating medium temperature zone (4): After incubation low temperature, at a heating rate of 2 ° C / min temperature rise from 200 ° C to 800 ° C. 中温区保温 Intermediate temperature thermal insulation

(5):温度保持800°C 6个小时。 (5): the temperature was maintained 800 ° C 6 hours. 中温区旋转(6):在温度升至800°C并且保温3小时后,旋转退火工装180度。 In the temperature region of rotation (6): After the temperature was raised to 800 ° C and for 3 hours, 180 ° rotation of the annealing fixture. 高温区升温(7):中温保温结束后,以0. 5°C /分钟的升温速率从800°C升温至1100°C。 High temperature heating zone (7): After the incubation temperature, a temperature rising rate of 0. 5 ° C / min temperature rise from 800 ° C to 1100 ° C. 高温区保温⑶:温度保持1100°C 12个小时。 Insulation high temperature region ⑶: maintaining the temperature 1100 ° C 12 hours. 高温区旋转(9):在温度升至1100°C并且保温6小时后,旋转退火工装180度。 Rotating the high temperature zone (9): After the temperature was raised to 1100 ° C and incubated for 6 hours, and 180 degrees rotation of the annealing fixture. 降温(10):高温保温结束后,以30°C/小时的降温速率降温至室温,打开炉膛,取出晶片。 Cooling (10): after the incubation temperature, at a cooling rate of 30 ° C / hr cooling to ambient temperature, the furnace is opened, the wafer is removed.

[0019] 退火后的4英寸蓝宝石双磨晶片,整个翘曲度小于5微米,加工应力基本消除。 [0019] Grinding dual sapphire wafer 4 inches after annealing, the entire warpage less than 5 microns, substantially eliminating process stress.

[0020] 实施例3 : [0020] Example 3:

[0021] 低温区升温(I):将单磨研磨后的4英寸蓝宝石晶片装入特殊工装内,放入退火炉炉膛,以:TC /分钟的升温速率从室温升温至200°C。 [0021] The low temperature heating (the I): The grinding mill after a single sapphire wafer 4 inches loaded into special tooling, into an annealing furnace hearth to: heating rate TC / min from room temperature to 200 ° C. 低温区保温⑵:温度保持200°C 3个小时。 Low temperature insulation ⑵: maintaining the temperature 200 ° C 3 hours. 低温区旋转(3):在温度升至200°C并且保温I. 5小时后,旋转退火工装180度。 Rotating the low-temperature region (3): After the temperature was raised to 200 ° C and incubated I. 5 hours, and 180 degrees rotation of the annealing fixture. 中温区升温(4):低温保温结束后,以2. 5°C /分钟的升温速率从200°C升温至800°C。 Heating medium temperature zone (4): After incubation low temperature, at a heating rate of 2. 5 ° C / min temperature rise from 200 ° C to 800 ° C. 中温区保温(5):温度保持800°C 10个小时。 Mid-temperature insulation (5): the temperature was maintained 800 ° C 10 hours. 中温区旋转(6):在温度升至800°C并且保温5小时后,旋转退火工装180度。 In the temperature region of rotation (6): After the temperature was raised to 800 ° C and kept for 5 hours, and 180 degrees rotation of the annealing fixture. 高温区升温(7):中温保温结束后,以1°C /分钟的升温速率从800°C升温至1600°C。 High temperature heating zone (7): After the incubation temperature, a temperature rise rate of 1 ° C / min temperature rise from 800 ° C to 1600 ° C. 高温区保温⑶:温度保持1600°C 18个小时。 Insulation high temperature region ⑶: maintaining the temperature 1600 ° C 18 hours. 高温区旋转(9):在温度升至1600°C并且保温9小时后,旋转退火工装180度。 Rotating the high temperature zone (9): After the temperature was raised to 1600 ° C and incubated for 9 hours annealing tooling rotation 180 degrees. 降温(10):高温保温结束后,以500C /小时的降温速率降温至室温,打开炉膛,取出晶片。 Cooling (10): after the incubation temperature, at a cooling rate of 500C / hr cooling to ambient temperature, the furnace is opened, the wafer is removed.

[0022] 退火后的4英寸蓝宝石单磨晶片,整个翘曲度小于5微米,加工应力基本消除。 [0022] Single grinding sapphire wafer 4 inches after annealing, the entire warpage less than 5 microns, substantially eliminating process stress.

[0023] 以上说明书中描述的只是本发明的具体实施方式,各种举例说明不对本发明的实质内容构成限制,所属技术领域的普通技术人员在阅读了说明书后可以对以前所述的具体实施方式做修改或变形, 而不背离发明的实质和范围。 [0023] DETAILED DESCRIPTION The above embodiments of the present invention is only described in the specification, illustrate various substance not be construed as limiting the present invention, those of ordinary skill in the art upon reading the specification can be embodied in the manner of the previous embodiment make changes or variations, without departing from the spirit and scope of the invention.

Claims (3)

  1. 1. ー种蓝宝石晶片的退火方法,其特征在于包括以下步骤: (1)将蓝宝石晶片装入退火炉中,快速直接升温至低温度区域150°C〜300°C,保温2〜4小时,此阶段升温时间为I〜2小时; (2)经过低温保温一段时间后,升温至中温区域600°C〜800°C,保温5〜10小时,此阶段升温时间为4〜6小时; (3)经过中温保温一段时间后,升温至高温区域900°C〜1600°C,保温10〜20小时,此阶段保温时间为6〜20小吋。 Annealing the sapphire wafer 1. ー species, comprising the steps of: (1) A sapphire wafer is loaded in an annealing furnace, rapid heating directly to a low-temperature region 150 ° C~300 ° C, 2 ~ 4 hours incubation, this stage heating time is I~2 hours; (2) a low temperature after an incubation period, warmed to intermediate temperature range 600 ° C~800 ° C, holding 5 to 10 hours, at this stage the heating time is 4 ~ 6 hours; (3 ) after a period of time the temperature insulation, heated to a high temperature region of 900 ° C~1600 ° C, 10-20 h incubation, the holding time at this stage is small 6~20 inches.
  2. 2.如权利要求I所述的ー种蓝宝石晶片的退火方法,其特征在于:在升温保温过程中,适时旋转装载蓝宝石衬底的エ装,使退火的晶片在退火炉中旋转。 2. The method of annealing the sapphire wafer ー kinds of claim I, wherein: during incubation at elevated temperatures, the rotational load Ester timely loading of the sapphire substrate, so that the wafer is annealed in an annealing furnace rotation.
  3. 3.如权利要求I所述的ー种蓝宝石晶片的退火方法,其特征在于:高温保温结束后,以每小时10°C〜50°C降温至室温出炉。 I 3. The method of claim ー species annealing the sapphire wafer, characterized in that: the end of the incubation temperature to 10 ° C~50 ° C per hour to cool to room temperature baked.
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CN102817083A (en) * 2012-09-21 2012-12-12 上海应用技术学院 Annealing method for SiC wafer
CN102945897A (en) * 2012-11-10 2013-02-27 长治虹源科技晶片技术有限公司 Processing method for sapphire substrate with graphic substrate
CN103643300A (en) * 2013-11-26 2014-03-19 浙江上城科技有限公司 Annealing method applied to sapphire processing
CN104451890A (en) * 2014-11-25 2015-03-25 蓝思科技(长沙)有限公司 Sapphire reinforcing method
WO2015057348A1 (en) * 2013-10-16 2015-04-23 Gtat Corporation A method of annealing sapphire
CN104755660A (en) * 2012-10-31 2015-07-01 蓝宝石科技株式会社 Heat treatment method and heat treatment device for single crystal sapphire
CN105140362A (en) * 2015-06-25 2015-12-09 江苏苏创光学器材有限公司 Production method of sapphire LED filament substrate
CN105154968A (en) * 2015-06-18 2015-12-16 江苏苏创光学器材有限公司 Preparation method for sapphire LED filament substrate
CN105150031A (en) * 2015-06-18 2015-12-16 江苏苏创光学器材有限公司 Production method for sapphire frameless touch screen panel
CN105200526A (en) * 2015-10-14 2015-12-30 盐城工学院 Gallium oxide wafer stress relieving annealing method
CN105291287A (en) * 2014-06-05 2016-02-03 兆远科技股份有限公司 Sapphire wafer machining method and intermediate in machining method
CN105332060A (en) * 2015-10-30 2016-02-17 江苏吉星新材料有限公司 Secondary sapphire wafer annealing method
CN105401220A (en) * 2014-09-12 2016-03-16 浙江上城科技有限公司 Method and equipment for eliminating stress of sapphire thin sheet
CN103643300B (en) * 2013-11-26 2017-04-12 浙江上城科技有限公司 One kind annealing method for processing a sapphire
CN107097148A (en) * 2017-06-13 2017-08-29 江苏吉星新材料有限公司 Classification method for sapphire substrate slices

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CN105140362A (en) * 2015-06-25 2015-12-09 江苏苏创光学器材有限公司 Production method of sapphire LED filament substrate
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