CN105128157B - Manufacturing method for sapphire fingerprint recognition panel - Google Patents
Manufacturing method for sapphire fingerprint recognition panel Download PDFInfo
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- CN105128157B CN105128157B CN201510339660.7A CN201510339660A CN105128157B CN 105128157 B CN105128157 B CN 105128157B CN 201510339660 A CN201510339660 A CN 201510339660A CN 105128157 B CN105128157 B CN 105128157B
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Abstract
The invention relates to a manufacturing method for a sapphire fingerprint recognition panel. The manufacturing method comprises the specific steps of crystal growth, crystal bar drawing, crystal cutting, laser wafer taking, grinding, chamfering, annealing, double-face polishing, film plating, ink smearing, hot drying and the like. According to the manufacturing method for the sapphire fingerprint recognition panel, the quality of finished wafers is high, the rejection rate is low, and the production efficiency is high.
Description
Technical field
The present invention relates to a kind of preparation method of sapphire sheet, more particularly, to a kind of preparation of sapphire fingerprint recognition panel
Method, belongs to technical field of sapphire treatment.
Background technology
Fingerprint identification technology is that a people is mapped with his fingerprint, by gathering his fingerprint and pre-saving
Fingerprint is compared it is possible to verify his true identity.Obtaining good fingerprint image is a sufficiently complex problem.Cause
Be for measurement fingerprint be only fairly small a piece of epidermis, so fingerprint collecting equipment should have resolution good enough to obtain
The details of fingerprint, this just the requirement to fingerprint recognition machine scanning panel very high.
With scientific and technological progress, the finger scan panel application of sapphire material is more and more extensive.Sapphire has very well
Thermal characteristicss, fabulous electrical characteristic and dielectric property, high intensity, excellent hot attribute and transmission can be kept at high temperature
Rate, and anti-chemical corrosion.It is the finger scan panel that raw material is made with sapphire, high definition, third dimension are good, surface is scratch-resistant
Wound, customer satisfaction is high.
Chinese patent literature zl201320527794.8 discloses a kind of fingerprint recognition machine, comprising: sapphire fingerprint machine is swept
Retouch panel, fingerprint collecting equipment, fingerprint comparison module and feedback of the information equipment, wherein, described sapphire fingerprint machine scanning plane
Plate covers on fingerprint collecting equipment, outer for protecting fingerprint machine inner member to be not exposed to, described fingerprint collecting equipment and institute
State fingerprint comparison module to be connected, described fingerprint comparison module is connected with described information feedback device.Sapphire crystal is from true
Empty ultraviolet, visible, near-infrared, until 5.5 μm of mid-infrared is respectively provided with high optical transmittance, can carry significantly in this, as panel
Identification probability of high fingerprint machine, is allowed to be applied to factory, the efficiency of staff attendance can improve in office；Sapphire crystal has
Have the hardness that safety glass can not compare and a mechanical strength, resistance to fall, damage resistant, be particularly well-suited to those and be constantly exposed to
Damage fingerprint machine used in the canned food of hidden danger and the factory of other hard metal object and workshop condition.But the fingerprint of this invention is known
Other panel still suffers from of poor quality, the low problem of yield rate.
Content of the invention
Present invention solves the technical problem that being: propose a kind of one-tenth tablet quality height, percent defective is low, the high sapphire of production efficiency
The preparation method of fingerprint recognition panel.
In order to solve above-mentioned technical problem, technical scheme proposed by the present invention is: a kind of fingerprint recognition machine scanning panel
Preparation method is it is characterised in that include step in detail below:
Step one, crystal growth；Pure al is loaded in the crucible of crystal growing furnace2o3Raw material, above described crucible
It is provided with rotatable and lifting lifting rod, the lower end of lifting rod is folded with the seed crystal of c crystal orientation；By evacuation in crystal growing furnace simultaneously
It is passed through protective gas, be warming up to 2100～2200 DEG C so that al2o3Melting, controls the liquid level temperature of melt to be 2055 DEG C, by seed
Crystalline substance is placed in al2o3The upper surface of melt makes itself and melt contacts, continues 0.5～1h；After seed crystal is fully stained with profit with melt, lifting
And rotate seed crystal, thus realize necking down to expand shoulder isodiametric growth；In the necking down stage, the liquid level temperature of melt is controlled to be 2050 DEG C,
Seed crystal is lifted upwards with the speed of 3～5mm/h, seed crystal is rotated with the speed of 45～48r/min；Expand the shoulder stage, control melt
Liquid level temperature is 2048 DEG C, lifts seed crystal upwards with the speed of 8～10mm/h, rotates seed crystal with the speed of 50～55r/min；Deng
In the footpath stage, control the liquid level temperature of melt to be 2052 DEG C, seed crystal is lifted upwards with the speed of 5～8mm/h, with 48～50r/min
Speed rotate seed crystal；After crystal growth terminates, the temperature in crystal growing furnace is down to 1580～1680 DEG C, then to crystal
Being made annealing treatment, controlling temperature with the speed slow cooling of 80～100 DEG C/h and to continue 18～22h, thus obtaining crystal；
Step 2, crystal draw rod；Crystal being oriented, then carrying out drawing rod using drawing excellent machine, thus obtaining c to crystalline substance
Rod；
Step 3, crystal-cut；Using carborundum line cutting equipment, crystal bar is cut, thus obtaining chip；
Step 4, laser take piece；Chip after polishing is put in laser cutting machine and is passed through protective gas, chip is pressed
Demand cuts into correspondingly sized；
Step 5, grinding；Using grinder, chip is ground；During grinding, add lapping liquid, abrasive disk to chip plus
It is depressed into 0.02～0.022mpa, the rotating speed of abrasive disk is 1000～1200r/min；Washes of absolute alcohol is used after the completion of grinding；Institute
State lapping liquid component to include by weight percentage: 0.5～2% granular size is 10～20 μm of cubic boron nitride powder, 14～
16% alkylphenol polyoxyethylene, 4～6% glycerol, 9～11% polypropylene glycol 400, remaining is deionized water；
Step 6, chamfering；Skive using Digit Control Machine Tool carries out chamfered to the corner of chip；
Step 7, annealing；Place a wafer in annealing furnace, heated up with the speed of 180～220 DEG C/h and temperature is risen to
1600 DEG C, it is incubated 2～6h respectively at 300 DEG C, 800 DEG C, 1600 DEG C during intensification, is then lowered the temperature with the temperature of 200 DEG C/h, fall
It is incubated 2～3h respectively at 1000 DEG C, 500 DEG C when warm and be cooled to room temperature taking-up；
Step 8, double side chemical polishing；First with dehydrated alcohol, chip is carried out, then the chip after cleaning is put into
Fixing in Twp-sided polishing machine；During polishing, add polishing fluid, polishing disk is forced into 0.12～0.15 mpa to chip, polishing disk
Rotating speed is 1000～1500r/min, by after polished chip washes of absolute alcohol, carry out natural cooling at room temperature；Institute
State polishing fluid component to include by weight percentage: 0.5～2% granular size is 1～6 μm of cubic boron nitride powder, 14～
16% alkylphenol polyoxyethylene, 4～6% glycerol, the nano silicon of 9～11% polypropylene glycol 400,0.5～2%,
Make the alkaline solution for 11.0～13.0 for the polishing fluid ph value, remaining is deionized water；It is continuously replenished alkalescence molten in polishing process
Liquid is to keep the ph value of polishing fluid；
Step 9, plating superhard film；Using magnetron sputtering coater, nitrogen is ionized into Nitrogen ion, then is bombarded with Nitrogen ion
Silicon target, forms nitridation silicon cladding in wafer surface；
Step 10, inking；Chip after plated film is covered hollowed-out board, brushes ink in the edge of chip and repeat to brush
Apply three layers；
Step 11, baking the affected part after applying some drugs；The chip being painted with ink is put into after baking the affected part after applying some drugs 2～3h in baking the affected part after applying some drugs machine, is air cooled to room temperature.
Technique scheme is improved to: in described step one, the temperature in crystal growing furnace is down to 1600 DEG C, then
Crystal is made annealing treatment, controls temperature with the speed slow cooling of 100 DEG C/h and to continue 22h.
Technique scheme is improved to: in described step 3, a diameter of 0.14～0.16mm of carborundum line, Buddha's warrior attendant
On sand line, the particle diameter of diamond is 30～40 μm, carborundum line in cutting with the motion of the speed of 12～15m/s, crystal phase for
The translational speed of carborundum line is 0.2～0.3mm/min, constantly sprays cutting liquid, described cutting liquid to carborundum line during cutting
In containing particle diameter be 20～30 μm diamond particles and corundum in granules that particle diameter is 50～60 μm.
Technique scheme is improved to: in described step 4, a diameter of 0.015～0.02mm of laser beam, cutting
Speed is 3～5mm/s.
Technique scheme is improved to: in described step 4, described protective gas is nitrogen.
Technique scheme is improved to: in described step 5, the oxygen being 3～6 μm containing particle diameter in described lapping liquid
Change alumina particles.
Technique scheme is improved to: in described step 7, during intensification, be incubated 2h at 300 DEG C, be incubated at 800 DEG C
3h, is incubated 4h at 1600 DEG C.
Technique scheme is improved to: in described step 8, described alkaline solution is koh.
Technique scheme is improved to: in described step 8, described polishing fluid ph value is 12.0.
Technique scheme is improved to: in described step 8, polishing disk is forced into 0.135mpa to chip.
The present invention has a positive effect:
(1) the fingerprint recognition panel preparation method of the present invention, first laser takes piece to grind again, polishes, and can improve grinding, throw
The production efficiency of light, because sapphire hardness is big, must apply larger pressure during polishing, annealing before polishing. is conducive to disappearing
Except internal stress produced by the machining operation such as wire cutting, grinding so that chip unsuitable fragmentation in polishing, effectively improve into
Product rate.
(2) the fingerprint recognition panel preparation method of the present invention, strictly controls interface temperature during crystal growth, draws high speed
Degree, rotary speed and annealing parameter, interface temperature is controlled at 2048～2052 DEG C, draws high speed controlling in 3～10mm/h, revolves
Rotary speed controls in 45～55r/min, and annealing temperature controls at 1580～1680 DEG C (preferably 1600 DEG C), with 80～100 DEG C/h
Speed slow cooling and continue 18～22h so that the production capacity of crystal is high, defect concentration is low, and quality is good, high yield rate,
Production cost can be greatly reduced.
(3) the fingerprint recognition panel preparation method of the present invention, strict control grind and the parameter of polishing and lapping liquid and
The composition of polishing fluid, is conducive to improving the efficiency ground and polish, and improves grinding and the yield rate of polishing, the chip knot prepared
Structure is complete, no physical damnification, and surface is fine and smooth, and smooth, deformation is little.In lapping liquid and polishing fluid, appropriate cubic boron nitride powder
Serve as abrasive material, hardness is high, wearability is good；It is outstanding that alkylphenol polyoxyethylene, glycerol, polypropylene glycol 400 and deionized water are formed
Supernatant liquid viscosity and interfacial film stable in properties so that abrasive suspension is stable, good evenness, will not glue simultaneously, be conducive to improving grind and
The quality of polishing and efficiency.Appropriate alkylphenol polyoxyethylene is a kind of nonionic surfactant, and its stable in properties has
The multiple performances such as dispersion, emulsifying, moistening, are that suspension obtains the topmost composition of excellent properties；Glycerol proportion is suitable, with water and
Organic solution has good dissolubility, is especially suitable for as auxiliary dispersants；Polypropylene glycol 400 has the work of emulsifying, moistening
With, and can effectively thickening, the effectively viscosity of lifting suspension and interface film character.In addition, containing appropriate in polishing fluid
Nanometer sio2, epigranular, good dispersion, planarization efficiency are high.It is alkalescence that alkaline solution koh makes polishing fluid, by chemistry
Corrosion auxiliary polishing, thus polishing effect is more preferably, polishing efficiency is more preferable.In order to keep the stability of polishing fluid, thus ensureing to throw
The efficiency of light and quality, it is necessary to constantly supplement alkaline solution, maintain polishing fluid ph value to be basically unchanged.
(4) the fingerprint recognition panel preparation method of the present invention, by brushing three layers of ink and then drying so that the side of chip
Edge is light tight, can be effectively prevented light and enter from the side of chip, imaging is impacted.
(5) the fingerprint recognition panel of the present invention is made up of base material using sapphire, because sapphire hardness is high, wearability
Good so that touch Panel is easy to wear and scratch；Sapphire c is 11.4 to dielectric constant, and a to m to being 9.4, this
C is adopted to seed crystal it is ensured that the requirement to dielectric constant for the fingerprint recognition panel during bright crystal growth.By the sapphire of the present invention
The fingerprint recognition panel that fingerprint recognition panel preparation method is made, highly polished, and become tablet quality high, percent defective is low, produces effect
Rate is high, has a extensive future.
Specific embodiment
Embodiment 1
The sapphire fingerprint recognition panel preparation method of the present embodiment specifically includes following steps:
Step one, crystal growth；Pure al is loaded in the crucible of crystal growing furnace2o3Raw material, above described crucible
It is provided with rotatable and lifting lifting rod, the lower end of lifting rod is folded with the seed crystal of c crystal orientation；By evacuation in crystal growing furnace simultaneously
It is passed through protective gas, be warming up to 2200 DEG C so that al2o3Melting, controls the liquid level temperature of melt to be 2055 DEG C, seed crystal is placed in
al2o3The upper surface of melt makes itself and melt contacts, continues 1h；After seed crystal is fully stained with profit with melt, lifts and rotate seed crystal,
Thus realizing necking down to expand shoulder isodiametric growth；In the necking down stage, the liquid level temperature of melt is controlled to be 2050 DEG C, with the speed of 5mm/h
Degree lifts seed crystal upwards, rotates seed crystal with the speed of 48r/min；Expand the shoulder stage, control the liquid level temperature of melt to be 2048 DEG C, with
The speed of 10mm/h lifts seed crystal upwards, rotates seed crystal with the speed of 55r/min；In the isometrical stage, control the liquid level temperature of melt
For 2052 DEG C, seed crystal is lifted upwards with the speed of 8mm/h, seed crystal is rotated with the speed of 50r/min；After crystal growth terminates,
Temperature in crystal growing furnace is down to 1680 DEG C, then crystal is made annealing treatment, control temperature to delay with the speed of 100 DEG C/h
Slowly lower the temperature and continue 22h, thus obtaining crystal；
Step 2, crystal draw rod；Crystal being oriented, then carrying out drawing rod using drawing excellent machine, thus obtaining c to crystalline substance
Rod；
Step 3, crystal-cut；Using carborundum line cutting equipment, crystal bar is cut, thus obtaining chip；
Step 4, laser take piece；Chip after polishing is put in laser cutting machine and is passed through protective gas, chip is pressed
Demand cuts into correspondingly sized；
Step 5, grinding；Using grinder, chip is ground；During grinding, add lapping liquid, abrasive disk to chip plus
It is depressed into 0.022mpa, the rotating speed of abrasive disk is 1200r/min；Washes of absolute alcohol is used after the completion of grinding；Described lapping liquid component
Include by weight percentage: 2% granular size is 20 μm of cubic boron nitride powder, 16% alkylphenol polyoxyethylene, 6%
Glycerol, 11% polypropylene glycol 400, remaining be deionized water；
Step 6, chamfering；Skive using Digit Control Machine Tool carries out chamfered to the corner of chip；
Step 7, annealing；Place a wafer in annealing furnace, heated up with the speed of 220 DEG C/h and temperature is risen to 1600
DEG C, during intensification 300 DEG C, 800 DEG C, 1600 DEG C respectively be incubated 6h, then lowered the temperature with the temperature of 200 DEG C/h, during cooling
1000 DEG C, 500 DEG C are incubated 3h respectively and are cooled to room temperature taking-up；
Step 8, double side chemical polishing；First with dehydrated alcohol, chip is carried out, then the chip after cleaning is put into
Fixing in Twp-sided polishing machine；During polishing, add polishing fluid, polishing disk is forced into 0.15 mpa to chip, and the rotating speed of polishing disk is
1500r/min, by after polished chip washes of absolute alcohol, carry out natural cooling at room temperature；Described polishing fluid component
Include by weight percentage: 2% granular size is 6 μm of cubic boron nitride powder, 16% alkylphenol polyoxyethylene, 6%
Glycerol, 11% polypropylene glycol 400, so that the alkaline solution for 13.0 for the polishing fluid ph value, remaining is 2% nano silicon
Deionized water；It is continuously replenished alkaline solution to keep the ph value of polishing fluid in polishing process；
Step 9, plating superhard film；Using magnetron sputtering coater, nitrogen is ionized into Nitrogen ion, then is bombarded with Nitrogen ion
Silicon target, forms nitridation silicon cladding in wafer surface；
Step 10, inking；Chip after plated film is covered hollowed-out board, brushes ink in the edge of chip and repeat to brush
Apply three layers；
Step 11, baking the affected part after applying some drugs；The chip being painted with ink is put into after baking the affected part after applying some drugs 3h in baking the affected part after applying some drugs machine, is air cooled to room temperature.
Embodiment 2
The sapphire fingerprint recognition panel preparation method of the present embodiment specifically includes following steps:
Step one, crystal growth；Pure al is loaded in the crucible of crystal growing furnace2o3Raw material, above described crucible
It is provided with rotatable and lifting lifting rod, the lower end of lifting rod is folded with the seed crystal of c crystal orientation；By evacuation in crystal growing furnace simultaneously
It is passed through protective gas, be warming up to 2100 DEG C so that al2o3Melting, controls the liquid level temperature of melt to be 2055 DEG C, seed crystal is placed in
al2o3The upper surface of melt makes itself and melt contacts, continues 0.5h；After seed crystal is fully stained with profit with melt, lifts and rotate seed
Crystalline substance, thus realize necking down to expand shoulder isodiametric growth；In the necking down stage, the liquid level temperature of melt is controlled to be 2050 DEG C, with 3mm/h's
Speed lifts seed crystal upwards, rotates seed crystal with the speed of 45r/min；Expand the shoulder stage, control the liquid level temperature of melt to be 2048 DEG C,
Seed crystal is lifted upwards with the speed of 8mm/h, seed crystal is rotated with the speed of 50r/min；In the isometrical stage, control the liquid level temperature of melt
For 2052 DEG C, seed crystal is lifted upwards with the speed of 5mm/h, seed crystal is rotated with the speed of 48r/min；After crystal growth terminates,
Temperature in crystal growing furnace is down to 1580 DEG C, then crystal is made annealing treatment, control temperature to delay with the speed of 80 DEG C/h
Slowly lower the temperature and continue 18h, thus obtaining crystal；
Step 2, crystal draw rod；Crystal being oriented, then carrying out drawing rod using drawing excellent machine, thus obtaining c to crystalline substance
Rod；
Step 3, crystal-cut；Using carborundum line cutting equipment, crystal bar is cut, thus obtaining chip；
Step 4, laser take piece；Chip after polishing is put in laser cutting machine and is passed through protective gas, chip is pressed
Demand cuts into correspondingly sized；
Step 5, grinding；Using grinder, chip is ground；During grinding, add lapping liquid, abrasive disk to chip plus
It is depressed into 0.02mpa, the rotating speed of abrasive disk is 1000r/min；Washes of absolute alcohol is used after the completion of grinding；Described lapping liquid component is pressed
Percentage by weight includes: 0.5% granular size is 10 μm of cubic boron nitride powder, 14% alkylphenol polyoxyethylene, and 4%
Glycerol, 9% polypropylene glycol 400, remaining be deionized water；
Step 6, chamfering；Skive using Digit Control Machine Tool carries out chamfered to the corner of chip；
Step 7, annealing；Place a wafer in annealing furnace, heated up with the speed of 180 DEG C/h and temperature is risen to 1600
DEG C, during intensification 300 DEG C, 800 DEG C, 1600 DEG C respectively be incubated 2h, then lowered the temperature with the temperature of 200 DEG C/h, during cooling
1000 DEG C, 500 DEG C are incubated 2h respectively and are cooled to room temperature taking-up；
Step 8, double side chemical polishing；First with dehydrated alcohol, chip is carried out, then the chip after cleaning is put into
Fixing in Twp-sided polishing machine；During polishing, add polishing fluid, polishing disk is forced into 0.12 mpa to chip, and the rotating speed of polishing disk is
1000r/min, by after polished chip washes of absolute alcohol, carry out natural cooling at room temperature；Described polishing fluid component
Include by weight percentage: 0.5% granular size is 1 μm of cubic boron nitride powder, 14% alkylphenol polyoxyethylene, 4%
Glycerol, 9% polypropylene glycol 400,0.5% nano silicon so that the alkaline solution for 11.0 for the polishing fluid ph value, remaining
For deionized water；It is continuously replenished alkaline solution to keep the ph value of polishing fluid in polishing process；
Step 9, plating superhard film；Using magnetron sputtering coater, nitrogen is ionized into Nitrogen ion, then is bombarded with Nitrogen ion
Silicon target, forms nitridation silicon cladding in wafer surface；
Step 10, inking；Chip after plated film is covered hollowed-out board, brushes ink in the edge of chip and repeat to brush
Apply three layers；
Step 11, baking the affected part after applying some drugs；The chip being painted with ink is put into after baking the affected part after applying some drugs 2h in baking the affected part after applying some drugs machine, is air cooled to room temperature.
Embodiment 3
The sapphire fingerprint recognition panel preparation method of the present embodiment specifically includes following steps:
Step one, crystal growth；Pure al is loaded in the crucible of crystal growing furnace2o3Raw material, above described crucible
It is provided with rotatable and lifting lifting rod, the lower end of lifting rod is folded with the seed crystal of c crystal orientation；By evacuation in crystal growing furnace simultaneously
It is passed through protective gas, be warming up to 2150 DEG C so that al2o3Melting, controls the liquid level temperature of melt to be 2055 DEG C, seed crystal is placed in
al2o3The upper surface of melt makes itself and melt contacts, continues 1h；After seed crystal is fully stained with profit with melt, lifts and rotate seed crystal,
Thus realizing necking down to expand shoulder isodiametric growth；In the necking down stage, the liquid level temperature of melt is controlled to be 2050 DEG C, with 3～5mm/h's
Speed lifts seed crystal upwards, rotates seed crystal with the speed of 46r/min；Expand the shoulder stage, control the liquid level temperature of melt to be 2048 DEG C,
Seed crystal is lifted upwards with the speed of 9mm/h, seed crystal is rotated with the speed of 50r/min；In the isometrical stage, control the liquid level temperature of melt
For 2052 DEG C, seed crystal is lifted upwards with the speed of 5mm/h, seed crystal is rotated with the speed of 48r/min；After crystal growth terminates,
Temperature in crystal growing furnace is down to 1600 DEG C, then crystal is made annealing treatment, control temperature to delay with the speed of 90 DEG C/h
Slowly lower the temperature and continue 20h, thus obtaining crystal；
Step 2, crystal draw rod；Crystal being oriented, then carrying out drawing rod using drawing excellent machine, thus obtaining c to crystalline substance
Rod；
Step 3, crystal-cut；Using carborundum line cutting equipment, crystal bar is cut, thus obtaining chip；
Step 4, laser take piece；Chip after polishing is put in laser cutting machine and is passed through protective gas, chip is pressed
Demand cuts into correspondingly sized；
Step 5, grinding；Using grinder, chip is ground；During grinding, add lapping liquid, abrasive disk to chip plus
It is depressed into 0.02mpa, the rotating speed of abrasive disk is 1100r/min；Washes of absolute alcohol is used after the completion of grinding；Described lapping liquid component is pressed
Percentage by weight includes: 1% granular size is 15 μm of cubic boron nitride powder, 15% alkylphenol polyoxyethylene, 5%
Glycerol, 10% polypropylene glycol 400, remaining is deionized water；
Step 6, chamfering；Skive using Digit Control Machine Tool carries out chamfered to the corner of chip；
Step 7, annealing；Place a wafer in annealing furnace, heated up with the speed of 200 DEG C/h and temperature is risen to 1600
DEG C, during intensification 300 DEG C, 800 DEG C, 1600 DEG C respectively be incubated 4h, then lowered the temperature with the temperature of 200 DEG C/h, during cooling
1000 DEG C, 500 DEG C are incubated 2.5h respectively and are cooled to room temperature taking-up；
Step 8, double side chemical polishing；First with dehydrated alcohol, chip is carried out, then the chip after cleaning is put into
Fixing in Twp-sided polishing machine；During polishing, add polishing fluid, polishing disk is forced into 0.13 mpa to chip, and the rotating speed of polishing disk is
1200r/min, by after polished chip washes of absolute alcohol, carry out natural cooling at room temperature；Described polishing fluid component
Include by weight percentage: 1% granular size is 3 μm of cubic boron nitride powder, 15% alkylphenol polyoxyethylene, 5%
Glycerol, 10% polypropylene glycol 400, so that the alkaline solution for 12.0 for the polishing fluid ph value, remaining is 1% nano silicon
Deionized water；It is continuously replenished alkaline solution to keep the ph value of polishing fluid in polishing process；
Step 9, plating superhard film；Using magnetron sputtering coater, nitrogen is ionized into Nitrogen ion, then is bombarded with Nitrogen ion
Silicon target, forms nitridation silicon cladding in wafer surface；
Step 10, inking；Chip after plated film is covered hollowed-out board, brushes ink in the edge of chip and repeat to brush
Apply three layers；
Step 11, baking the affected part after applying some drugs；The chip being painted with ink is put into after baking the affected part after applying some drugs 2h in baking the affected part after applying some drugs machine, is air cooled to room temperature.
The preparation method of the sapphire fingerprint recognition panel of the present invention is not limited to the particular technique described in above-described embodiment
Scheme, all technical schemes using equivalent formation are the protection domain of application claims.
Claims (9)
1. a kind of preparation method of sapphire fingerprint recognition panel is it is characterised in that include step in detail below:
Step one, crystal growth；Pure al is loaded in the crucible of crystal growing furnace2o3Raw material, is provided with above described crucible
Lifting rod that is rotatable and lifting, the lower end of lifting rod is folded with the seed crystal of c crystal orientation；By evacuation in crystal growing furnace and be passed through
Protective gas, is warming up to 2100～2200 DEG C so that al2o3Melting, controls the liquid level temperature of melt to be 2055 DEG C, seed crystal is put
In al2o3The upper surface of melt makes itself and melt contacts, continues 0.5～1h；After seed crystal is fully stained with profit with melt, lifts and turn
Dynamic seed crystal, thus realize necking down to expand shoulder isodiametric growth；In the necking down stage, the liquid level temperature of melt is controlled to be 2050 DEG C, with 3～
The speed of 5mm/h lifts seed crystal upwards, rotates seed crystal with the speed of 45～48r/min；Expand the shoulder stage, control the liquid level temperature of melt
Spend for 2048 DEG C, seed crystal is lifted upwards with the speed of 8～10mm/h, seed crystal is rotated with the speed of 50～55r/min；Isometrical rank
Section, controls the liquid level temperature of melt to be 2052 DEG C, lifts seed crystal upwards with the speed of 5～8mm/h, with the speed of 48～50r/min
Degree rotates seed crystal；After crystal growth terminates, the temperature in crystal growing furnace is down to 1580～1680 DEG C, then crystal is carried out
Annealing, controls temperature with the speed slow cooling of 80～100 DEG C/h and to continue 18～22h, thus obtaining crystal；
Step 2, crystal draw rod；Crystal being oriented, then carrying out drawing rod using drawing excellent machine, thus obtaining c to crystal bar；
Step 3, crystal-cut；Using carborundum line cutting equipment, crystal bar is cut, thus obtaining chip；
Step 4, laser take piece；Chip after polishing is put in laser cutting machine and is passed through protective gas, by chip on demand
Cut into correspondingly sized；
Step 5, grinding；Using grinder, chip is ground；During grinding, add lapping liquid, abrasive disk is forced into chip
0.02～0.022mpa, the rotating speed of abrasive disk is 1000～1200r/min；Washes of absolute alcohol is used after the completion of grinding；Described grind
Grinding fluid component includes: 0.5～2% granular size is 10～20 μm of cubic boron nitride powder, 14～16% alkyl phenol polyoxy
Vinyl Ether, 4～6% glycerol, 9～11% polypropylene glycol 400, remaining is deionized water；
Step 6, chamfering；Skive using Digit Control Machine Tool carries out chamfered to the corner of chip；
Step 7, annealing；Place a wafer in annealing furnace, heated up with the speed of 180～220 DEG C/h and temperature is risen to 1600
DEG C, it is incubated 2～6h respectively at 300 DEG C, 800 DEG C, 1600 DEG C during intensification, then lowered the temperature with the temperature of 200 DEG C/h, during cooling
It is incubated 2～3h respectively at 1000 DEG C, 500 DEG C and be cooled to room temperature taking-up；
Step 8, double side chemical polishing；First with dehydrated alcohol, chip is carried out, then the chip after cleaning is put into two-sided
Fixing in buffing machine；During polishing, add polishing fluid, polishing disk is forced into 0.12～0.15 mpa, the rotating speed of polishing disk to chip
For 1000～1500r/min, by after polished chip washes of absolute alcohol, carry out natural cooling at room temperature；Described throwing
Light liquid component includes: 0.5～2% granular size is 1～6 μm of cubic boron nitride powder, 14～16% alkyl phenol polyoxy second
Alkene ether, 4～6% glycerol, the nano silicon of 9～11% polypropylene glycol 400,0.5～2% is so that polishing fluid ph value is
11.0～13.0 alkaline solution, remaining is deionized water；It is continuously replenished alkaline solution to keep polishing fluid in polishing process
Ph value；
Step 9, plating superhard film；Using magnetron sputtering coater, nitrogen is ionized into Nitrogen ion, then bombards silicon target with Nitrogen ion
Material, forms nitridation silicon cladding in wafer surface；
Step 10, inking；Chip after plated film is covered hollowed-out board, brushes ink and repeat to brush three in the edge of chip
Layer；
Step 11, baking the affected part after applying some drugs；The chip being painted with ink is put into after baking the affected part after applying some drugs 2～3h in baking the affected part after applying some drugs machine, is air cooled to room temperature.
2. according to claim 1 sapphire fingerprint recognition panel preparation method it is characterised in that: in described step one,
Temperature in crystal growing furnace is down to 1600 DEG C, then crystal is made annealing treatment, control temperature with the speed of 100 DEG C/h
Slow cooling simultaneously continues 22h.
3. according to claim 1 sapphire fingerprint recognition panel preparation method it is characterised in that: in described step 3,
A diameter of 0.14～0.16mm of carborundum line, on carborundum line, the particle diameter of diamond is 30～40 μm, and carborundum line is in cutting
When be 0.2～0.3mm/min with the motion of the speed of 12～15m/s, crystal phase for the translational speed of carborundum line, during cutting not
Break to carborundum line spray cutting liquid, in described cutting liquid containing particle diameter be 20～30 μm diamond particles and particle diameter be 50
～60 μm of corundum in granules.
4. according to claim 1 sapphire fingerprint recognition panel preparation method it is characterised in that: in described step 4,
A diameter of 0.015～0.02mm of laser beam, cutting speed is 3～5mm/s.
5. according to claim 1 sapphire fingerprint recognition panel preparation method it is characterised in that: in described step 4,
Described protective gas is nitrogen.
6. according to claim 1 sapphire fingerprint recognition panel preparation method it is characterised in that: in described step 7,
During intensification, it is incubated 2h at 300 DEG C, is incubated 3h at 800 DEG C, be incubated 4h at 1600 DEG C.
7. according to claim 1 sapphire fingerprint recognition panel preparation method it is characterised in that: in described step 8,
Described alkaline solution is koh.
8. according to claim 1 sapphire fingerprint recognition panel preparation method it is characterised in that: in described step 8,
Described polishing fluid ph value is 12.0.
9. according to claim 1 sapphire fingerprint recognition panel preparation method it is characterised in that: in described step 8,
Polishing disk is forced into 0.135mpa to chip.
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| CN107868937B (en) * | 2017-09-29 | 2020-06-19 | 江西沃格光电股份有限公司 | Anti-dazzle sapphire screen and preparation method thereof |
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| CN104111553B (en) * | 2013-04-22 | 2017-09-05 | 瀚宇彩晶股份有限公司 | Touch control liquid crystal panel and its manufacture method |
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