CN105185877A - Sapphire LED filament preparation method - Google Patents
Sapphire LED filament preparation method Download PDFInfo
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- CN105185877A CN105185877A CN201510339646.7A CN201510339646A CN105185877A CN 105185877 A CN105185877 A CN 105185877A CN 201510339646 A CN201510339646 A CN 201510339646A CN 105185877 A CN105185877 A CN 105185877A
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- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 47
- 239000010980 sapphire Substances 0.000 title claims abstract description 47
- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- 239000013078 crystal Substances 0.000 claims abstract description 131
- 238000005498 polishing Methods 0.000 claims abstract description 74
- 238000000137 annealing Methods 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 19
- 238000000227 grinding Methods 0.000 claims abstract description 18
- 238000005520 cutting process Methods 0.000 claims abstract description 17
- 238000003466 welding Methods 0.000 claims abstract description 11
- 238000005538 encapsulation Methods 0.000 claims abstract description 6
- 239000007788 liquid Substances 0.000 claims description 38
- 239000012530 fluid Substances 0.000 claims description 28
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 25
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 24
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 17
- 239000000843 powder Substances 0.000 claims description 16
- 239000012670 alkaline solution Substances 0.000 claims description 14
- 241001272567 Hominoidea Species 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 12
- 235000011187 glycerol Nutrition 0.000 claims description 12
- 239000002245 particle Substances 0.000 claims description 12
- 229920001451 polypropylene glycol Polymers 0.000 claims description 12
- 230000001681 protective effect Effects 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 229910052582 BN Inorganic materials 0.000 claims description 11
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 11
- 239000008367 deionised water Substances 0.000 claims description 11
- 229910021641 deionized water Inorganic materials 0.000 claims description 11
- 238000001816 cooling Methods 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 238000010583 slow cooling Methods 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 7
- 239000003292 glue Substances 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000003698 laser cutting Methods 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 5
- 239000005543 nano-size silicon particle Substances 0.000 claims description 5
- 238000007517 polishing process Methods 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 239000002002 slurry Substances 0.000 claims description 5
- 238000010792 warming Methods 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 claims description 2
- 229910001573 adamantine Inorganic materials 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 239000010431 corundum Substances 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000008187 granular material Substances 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 description 12
- 239000011521 glass Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 239000000725 suspension Substances 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004945 emulsification Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention relates to a sapphire LED filament preparation method specifically comprising the steps of crystal growing, bar hollowing-out from crystal, crystal cutting, grinding, chamfering, annealing, double-sided polishing, wafer cutting through laser, circuit printing, chip welding, encapsulation, and the like. Sapphire LED filaments prepared by the method of the invention are of high quality, the rejection rate is low, and the production efficiency is high.
Description
Technical field
The present invention relates to a kind of preparation method of sapphire sheet, particularly relate to a kind of preparation method of sapphire LED silk, belong to technical field of sapphire treatment.
Background technology
Advantages such as LED silk is energy-conservation with it, full angle is luminous and being widely used.At present, the material of LED silk substrate is generally glass, silicones or carborundum, but glass hard (HRC65Yi Shang) is poor, poor thermal conductivity; Silicones poor thermal conductivity; Carborundum then cost of manufacture is large.
Along with the progress of science and technology, sapphire substrate is used widely in LED technology.Sapphire has good thermal characteristics, fabulous electrical characteristic and dielectric property, at high temperature can keep high strength, excellent hot attribute and transmitance, and anti-chemical corrosion.Be the LED silk that raw material is made with sapphire, brightness is high, and hardness is high and thermal conductivity good, deeply by consumer satisfaction.
Chinese patent literature ZL201420699840.7 discloses a kind of LED silk of all-round luminescence, comprise the substrate being mixed with fluorescent material, be arranged at the electrode on described substrate, at least one LED chip be on the substrate installed, and be covered in the packaging plastic on described LED chip.By the substrate that the silicones containing fluorescent material is formed, eliminate glass or the sapphire cost as substrate.The substrate that the silicones being mixed with fluorescent material is formed instead of glass and sapphire substrate, and use the filament of described substrate manufacture to avoid glass or sapphire to the impact of chip light-emitting, achieve 360 degree of bright dippings, light-emitting uniformity and light efficiency improve greatly.But the method process step design is reasonable not, quality and the rate of finished products of LED silk directly can be affected.
Summary of the invention
The technical problem that the present invention solves is: propose a kind of one-tenth tablet quality high, percent defective is low, the preparation method of the sapphire LED silk that production efficiency is high.
In order to solve the problems of the technologies described above, the technical scheme that the present invention proposes is: a kind of preparation method of sapphire LED silk, comprises following concrete steps:
Step one, crystal growth; Pure Al is loaded in the crucible of crystal growing furnace
2o
3raw material, is provided with lifting rod that is rotatable and lifting above described crucible, the lower end of lifting rod is folded with the seed crystal in A crystal orientation, M crystal orientation or C crystal orientation; To vacuumize in crystal growing furnace and pass into protective gas, be warming up to 2100 ~ 2200 DEG C, make Al
2o
3melting, the liquid level temperature controlling melt is 2055 DEG C, and seed crystal is placed in Al
2o
3the upper surface of melt makes itself and melt contacts, continues 0.5 ~ 1h; After seed crystal and melt are fully stained with profit, lift and rotate seed crystal, thus realizing necking down-expansion shoulder-isodiametric growth; In the necking down stage, the liquid level temperature controlling melt is 2050 DEG C, upwards lifts seed crystal with the speed of 3 ~ 5mm/h, rotates seed crystal with the speed of 45 ~ 48r/min; Expand the shoulder stage, the liquid level temperature controlling melt is 2048 DEG C, upwards lifts seed crystal with the speed of 8 ~ 10mm/h, rotates seed crystal with the speed of 50 ~ 55r/min; In the isometrical stage, the liquid level temperature controlling melt is 2052 DEG C, upwards lifts seed crystal with the speed of 5 ~ 8mm/h, rotates seed crystal with the speed of 48 ~ 50r/min; After crystal growth terminates, the temperature in crystal growing furnace is down to 1580 ~ 1680 DEG C, then carries out annealing in process to crystal, control temperature also continues 18 ~ 22h with the speed slow cooling of 80 ~ 100 DEG C/h, thus obtains crystal;
Step 2, crystal draw rod; Orientation is carried out to crystal, then uses and draw excellent machine and carry out drawing rod, thus obtain crystal bar;
Step 3, crystal-cut; Adopt carborundum line cutting equipment to cut crystal bar, thus obtain wafer;
Step 4, grinding; Grinder is adopted to grind wafer; During grinding, add lapping liquid, abrasive disk is forced into 0.02 ~ 0.022Mpa to wafer, and the rotating speed of abrasive disk is 1000 ~ 1200rpm/min; Grind rear washes of absolute alcohol; Described lapping liquid component comprises: the granular size of 0.5 ~ 2% is the cubic boron nitride powder of 10 ~ 20 μm, the APES of 14 ~ 16%, the glycerine of 4 ~ 6%, the polypropylene glycol 400 of 9 ~ 11%, and all the other are deionized water;
Step 5, chamfering; The skive of Digit Control Machine Tool is adopted to carry out chamfered to the corner of wafer;
Step 6, annealing; Wafer is put into annealing furnace, carry out heating up with the speed of 180 ~ 220 DEG C/h and temperature risen to 1600 DEG C, 2 ~ 6h is incubated respectively at 300 DEG C, 800 DEG C, 1600 DEG C during intensification, then lower the temperature with the temperature of 200 DEG C, be incubated 2 ~ 3h respectively at 1000 DEG C, 500 DEG C during cooling and be cooled to room temperature taking-up;
Step 7, double side chemical polishing; First with absolute ethyl alcohol, wafer is cleaned, then the wafer after cleaning is put into Twp-sided polishing machine and fix; During polishing, add polishing fluid, polishing disk is forced into 0.12 ~ 0.15Mpa to wafer, and the rotating speed of polishing disk is 1000 ~ 1500rpm/min, by after polished wafer washes of absolute alcohol, at room temperature carries out nature cooling; Described polishing fluid component comprises: the granular size of 0.5 ~ 2% is the cubic boron nitride powder of 1 ~ 6 μm, the APES of 14 ~ 16%, the glycerine of 4 ~ 6%, the polypropylene glycol 400 of 9 ~ 11%, the nano silicon of 0.5 ~ 2%, make polishing fluid pH value be 11.0 ~ 13.0 alkaline solution, all the other are deionized water; Alkaline solution is constantly supplemented to keep the pH value of polishing fluid in polishing process;
Step 8, laser get sheet; Wafer after polishing is put into laser cutting machine and passes into protective gas, wafer is cut into corresponding size by demand;
Step 9, printed circuit; Laser is got the silver of the Sapphire wafer surface after sheet slurry printed circuit, be then heated to 400 ~ 500 degrees Celsius and circuit is sintered on sapphire wafer;
Step 10, welding chip; LED chip scaling powder is fixed on printed circuit, is heated to 400 ~ 450 degrees Celsius by chips welding on printed circuit;
Step 11, encapsulation; Fluorescent glue is used sapphire wafer and LED chip to be encapsulated.
Being improved to technique scheme: in described step one, the temperature in crystal growing furnace is down to 1600 DEG C, then annealing in process is carried out to crystal, control temperature also continues 22h with the speed slow cooling of 100 DEG C/h.
Being improved to technique scheme: in described step 3, the diameter of carborundum line is 0.14 ~ 0.16mm, on carborundum line, adamantine particle diameter is 30 ~ 40 μm, carborundum line moves with the speed of 12 ~ 15m/s when cutting, crystal is 0.2 ~ 0.3mm/min relative to the translational speed of carborundum line, constantly cutting liquid is sprayed to carborundum line, containing particle diameter to be the diamond particles of 20 ~ 30 μm and particle diameter the be corundum in granules of 50 ~ 60 μm in described cutting liquid during cutting.
Being improved to technique scheme: in described step 4 is the alumina particle of 3 ~ 6 μm containing particle diameter in described lapping liquid.
Being improved to technique scheme: in described step 6, during intensification, at 300 DEG C of insulation 2h, at 800 DEG C of insulation 3h, at 1600 DEG C of insulation 4h.
Being improved to technique scheme: in described step 7, described alkaline solution is KOH.
Being improved to technique scheme: in described step 7, described polishing fluid pH value is 12.0.
Being improved to technique scheme: in described step 7, polishing disk is forced into 0.135Mpa to wafer.
Being improved to technique scheme: in described step 8, the diameter of laser beam is 0.015 ~ 0.02mm, and cutting speed is 3 ~ 5mm/s.
Being improved to technique scheme: protective gas described in step 8 is nitrogen.
The present invention has positive effect:
(1) LED silk preparation method of the present invention, sheet is got in first grinding, polishing again laser, the production efficiency of grinding, polishing can be improved, because sapphire hardness is large, larger pressure must be applied during polishing, annealing is conducive to the internal stress that machining operation such as elimination Linear cut, grinding etc. produces before polishing., makes wafer unsuitable cracked when polishing, effectively improves rate of finished products.
(2) LED silk preparation method of the present invention, interface temperature during strict control crystal growth, draw high speed, rotary speed and annealing parameter, interface temperature is controlled at 2048 ~ 2052 DEG C, draw high speeds control at 3 ~ 10mm/h, rotary speed controls at 45 ~ 55r/min, annealing temperature controls at 1580 ~ 1680 DEG C (preferably 1600 DEG C), also 18 ~ 22h is continued with the speed slow cooling of 80 ~ 100 DEG C/h, thus make the production capacity of crystal high, defect concentration is low, quality is good, and rate of finished products is high, can reduce production cost widely.
(3) LED silk preparation method of the present invention, strict control grinding and the parameter of polishing and the composition of lapping liquid and polishing fluid, be conducive to the efficiency improving grinding and polishing, improve the rate of finished products of grinding and polishing, the chip architecture prepared is complete, and without physical damnification, surface is fine and smooth, smooth, deformation is little.In lapping liquid and polishing fluid, appropriate cubic boron nitride powder serves as abrasive material, and hardness is high, and resistance to wear is good; The suspension viscosity that APES, glycerine, polypropylene glycol 400 and deionized water are formed and interfacial film stable in properties, abrasive suspension is stablized, and good evenness, can not glue also, is conducive to the quality and the efficiency that improve grinding and polishing.Appropriate APES is a kind of non-ionic surface active agent, its stable in properties, and having dispersion, emulsification, the multiple performance such as wetting, is that suspension obtains the topmost composition of excellent properties; Glycerine proportion is suitable, has good dissolubility with water and organic solution, very applicable as auxiliary dispersants; Polypropylene glycol 400 has emulsification, wetting effect, and can effectively thickening, effectively promotes viscosity and the interfacial film character of suspension.In addition, appropriate Nano-meter SiO_2 is contained in polishing fluid
2, epigranular, good dispersion, planarization efficiency are high.Alkaline solution KOH makes polishing fluid be alkalescence, assists polishing by chemical corrosion, thus polishing effect is better, and polishing efficiency is better.In order to keep the stability of polishing fluid, thus ensureing efficiency and the quality of polishing, constantly must supplement alkaline solution, maintaining polishing fluid pH value substantially constant.
(4) LED silk of the present invention adopts sapphire to be that substrate is made, and because sapphire hardness is high, resistance to wear is good, does not make substrate easy to wear and scratch.By the filament that LED silk preparation method of the present invention makes, luminous efficiency is high, and optical property is up to standard, and becomes tablet quality high, and percent defective is low, and production efficiency is high, has a extensive future.
Embodiment
Embodiment 1
The preparation flow of the sapphire LED silk of the present embodiment comprises the steps:
Step one, crystal growth; Pure Al is loaded in the crucible of crystal growing furnace
2o
3raw material, is provided with lifting rod that is rotatable and lifting above described crucible, the lower end of lifting rod is folded with the seed crystal in A crystal orientation, M crystal orientation or C crystal orientation; To vacuumize in crystal growing furnace and pass into protective gas, be warming up to 2200 DEG C, make Al
2o
3melting, the liquid level temperature controlling melt is 2055 DEG C, and seed crystal is placed in Al
2o
3the upper surface of melt makes itself and melt contacts, continues 1h; After seed crystal and melt are fully stained with profit, lift and rotate seed crystal, thus realizing necking down-expansion shoulder-isodiametric growth; In the necking down stage, the liquid level temperature controlling melt is 2050 DEG C, upwards lifts seed crystal with the speed of 5mm/h, rotates seed crystal with the speed of 48r/min; Expand the shoulder stage, the liquid level temperature controlling melt is 2048 DEG C, upwards lifts seed crystal with the speed of 10mm/h, rotates seed crystal with the speed of 55r/min; In the isometrical stage, the liquid level temperature controlling melt is 2052 DEG C, upwards lifts seed crystal with the speed of 8mm/h, rotates seed crystal with the speed of 50r/min; After crystal growth terminates, the temperature in crystal growing furnace is down to 1680 DEG C, then carries out annealing in process to crystal, control temperature also continues 22h with the speed slow cooling of 100 DEG C/h, thus obtains crystal;
Step 2, crystal draw rod; Orientation is carried out to crystal, then uses and draw excellent machine and carry out drawing rod, thus obtain crystal bar;
Step 3, crystal-cut; Adopt carborundum line cutting equipment to cut crystal bar, thus obtain wafer;
Step 4, grinding; Grinder is adopted to grind wafer; During grinding, add lapping liquid, abrasive disk is forced into 0.022Mpa to wafer, and the rotating speed of abrasive disk is 1200rpm/min; Grind rear washes of absolute alcohol; Described lapping liquid component comprises: the granular size of 2% is the cubic boron nitride powder of 20 μm, the APES of 16%, the glycerine of 6%, the polypropylene glycol 400 of 11%, and all the other are deionized water;
Step 5, chamfering; The skive of Digit Control Machine Tool is adopted to carry out chamfered to the corner of wafer;
Step 6, annealing; Wafer is put into annealing furnace, carry out heating up with the speed of 220 DEG C/h and temperature risen to 1600 DEG C, be incubated 6h respectively at 300 DEG C, 800 DEG C, 1600 DEG C during intensification, then lower the temperature with the temperature of 200 DEG C, be incubated 3h respectively at 1000 DEG C, 500 DEG C during cooling and be cooled to room temperature taking-up;
Step 7, double side chemical polishing; First with absolute ethyl alcohol, wafer is cleaned, then the wafer after cleaning is put into Twp-sided polishing machine and fix; During polishing, add polishing fluid, polishing disk is forced into 0.15Mpa to wafer, and the rotating speed of polishing disk is 1500rpm/min, by after polished wafer washes of absolute alcohol, at room temperature carries out nature cooling; Described polishing fluid component comprises: the granular size of 2% is the cubic boron nitride powder of 6 μm, the APES of 16%, the glycerine of 6%, the polypropylene glycol 400 of 11%, the nano silicon of 2%, make polishing fluid pH value be 13.0 alkaline solution, all the other are deionized water; Alkaline solution is constantly supplemented to keep the pH value of polishing fluid in polishing process;
Step 8, laser get sheet; Wafer after polishing is put into laser cutting machine and passes into protective gas, wafer is cut into corresponding size by demand;
Step 9, printed circuit; Laser is got the silver of the Sapphire wafer surface after sheet slurry printed circuit, be then heated to 500 degrees Celsius and circuit is sintered on sapphire wafer;
Step 10, welding chip; LED chip scaling powder is fixed on printed circuit, is heated to 450 degrees Celsius by chips welding on printed circuit;
Step 11, encapsulation; Fluorescent glue is used sapphire wafer and LED chip to be encapsulated.
Embodiment 2
The preparation flow of the sapphire LED silk of the present embodiment comprises the steps:
Step one, crystal growth; Pure Al is loaded in the crucible of crystal growing furnace
2o
3raw material, is provided with lifting rod that is rotatable and lifting above described crucible, the lower end of lifting rod is folded with the seed crystal in A crystal orientation, M crystal orientation or C crystal orientation; To vacuumize in crystal growing furnace and pass into protective gas, be warming up to 2100 DEG C, make Al
2o
3melting, the liquid level temperature controlling melt is 2055 DEG C, and seed crystal is placed in Al
2o
3the upper surface of melt makes itself and melt contacts, continues 0.5 ~ 1h; After seed crystal and melt are fully stained with profit, lift and rotate seed crystal, thus realizing necking down-expansion shoulder-isodiametric growth; In the necking down stage, the liquid level temperature controlling melt is 2050 DEG C, upwards lifts seed crystal with the speed of 3mm/h, rotates seed crystal with the speed of 45r/min; Expand the shoulder stage, the liquid level temperature controlling melt is 2048 DEG C, upwards lifts seed crystal with the speed of 8mm/h, rotates seed crystal with the speed of 50r/min; In the isometrical stage, the liquid level temperature controlling melt is 2052 DEG C, upwards lifts seed crystal with the speed of 5mm/h, rotates seed crystal with the speed of 48r/min; After crystal growth terminates, the temperature in crystal growing furnace is down to 1580 DEG C, then carries out annealing in process to crystal, control temperature also continues 18h with the speed slow cooling of 80 ~ 100 DEG C/h, thus obtains crystal;
Step 2, crystal draw rod; Orientation is carried out to crystal, then uses and draw excellent machine and carry out drawing rod, thus obtain crystal bar;
Step 3, crystal-cut; Adopt carborundum line cutting equipment to cut crystal bar, thus obtain wafer;
Step 4, grinding; Grinder is adopted to grind wafer; During grinding, add lapping liquid, abrasive disk is forced into 0.02Mpa to wafer, and the rotating speed of abrasive disk is 1000rpm/min; Grind rear washes of absolute alcohol; Described lapping liquid component comprises: the granular size of 0.5% is the cubic boron nitride powder of 10 μm, the APES of 14%, the glycerine of 4%, the polypropylene glycol 400 of 9%, and all the other are deionized water;
Step 5, chamfering; The skive of Digit Control Machine Tool is adopted to carry out chamfered to the corner of wafer;
Step 6, annealing; Wafer is put into annealing furnace, carry out heating up with the speed of 180 DEG C/h and temperature risen to 1600 DEG C, be incubated 2h respectively at 300 DEG C, 800 DEG C, 1600 DEG C during intensification, then lower the temperature with the temperature of 200 DEG C, be incubated 2h respectively at 1000 DEG C, 500 DEG C during cooling and be cooled to room temperature taking-up;
Step 7, double side chemical polishing; First with absolute ethyl alcohol, wafer is cleaned, then the wafer after cleaning is put into Twp-sided polishing machine and fix; During polishing, add polishing fluid, polishing disk is forced into 0.12Mpa to wafer, and the rotating speed of polishing disk is 1000rpm/min, by after polished wafer washes of absolute alcohol, at room temperature carries out nature cooling; Described polishing fluid component comprises: the granular size of 0.5% is the cubic boron nitride powder of 1 μm, the APES of 14%, the glycerine of 4%, the polypropylene glycol 400 of 9%, the nano silicon of 0.5%, make polishing fluid pH value be 11.0 alkaline solution, all the other are deionized water; Alkaline solution is constantly supplemented to keep the pH value of polishing fluid in polishing process;
Step 8, laser get sheet; Wafer after polishing is put into laser cutting machine and passes into protective gas, wafer is cut into corresponding size by demand;
Step 9, printed circuit; Laser is got the silver of the Sapphire wafer surface after sheet slurry printed circuit, be then heated to 400 degrees Celsius and circuit is sintered on sapphire wafer;
Step 10, welding chip; LED chip scaling powder is fixed on printed circuit, is heated to 400 degrees Celsius by chips welding on printed circuit;
Step 11, encapsulation; Fluorescent glue is used sapphire wafer and LED chip to be encapsulated.
Embodiment 3
The preparation flow of the sapphire LED silk of the present embodiment comprises the steps:
Step one, crystal growth; Pure Al is loaded in the crucible of crystal growing furnace
2o
3raw material, is provided with lifting rod that is rotatable and lifting above described crucible, the lower end of lifting rod is folded with the seed crystal in A crystal orientation, M crystal orientation or C crystal orientation; To vacuumize in crystal growing furnace and pass into protective gas, be warming up to 2100 DEG C, make Al
2o
3melting, the liquid level temperature controlling melt is 2055 DEG C, and seed crystal is placed in Al
2o
3the upper surface of melt makes itself and melt contacts, continues 0.5h; After seed crystal and melt are fully stained with profit, lift and rotate seed crystal, thus realizing necking down-expansion shoulder-isodiametric growth; In the necking down stage, the liquid level temperature controlling melt is 2050 DEG C, upwards lifts seed crystal with the speed of 4mm/h, rotates seed crystal with the speed of 45r/min; Expand the shoulder stage, the liquid level temperature controlling melt is 2048 DEG C, upwards lifts seed crystal with the speed of 8mm/h, rotates seed crystal with the speed of 50r/min; In the isometrical stage, the liquid level temperature controlling melt is 2052 DEG C, upwards lifts seed crystal with the speed of 5mm/h, rotates seed crystal with the speed of 48r/min; After crystal growth terminates, the temperature in crystal growing furnace is down to 1600 DEG C, then carries out annealing in process to crystal, control temperature also continues 18h with the speed slow cooling of 80 DEG C/h, thus obtains crystal;
Step 2, crystal draw rod; Orientation is carried out to crystal, then uses and draw excellent machine and carry out drawing rod, thus obtain crystal bar;
Step 3, crystal-cut; Adopt carborundum line cutting equipment to cut crystal bar, thus obtain wafer;
Step 4, grinding; Grinder is adopted to grind wafer; During grinding, add lapping liquid, abrasive disk is forced into 0.02Mpa to wafer, and the rotating speed of abrasive disk is 1100rpm/min; Grind rear washes of absolute alcohol; Described lapping liquid component comprises: the granular size of 1% is the cubic boron nitride powder of 15 μm, the APES of 15%, the glycerine of 5%, the polypropylene glycol 400 of 10%, and all the other are deionized water;
Step 5, chamfering; The skive of Digit Control Machine Tool is adopted to carry out chamfered to the corner of wafer;
Step 6, annealing; Wafer is put into annealing furnace, carry out heating up with the speed of 200 DEG C/h and temperature risen to 1600 DEG C, be incubated 4h respectively at 300 DEG C, 800 DEG C, 1600 DEG C during intensification, then lower the temperature with the temperature of 200 DEG C, be incubated 3h respectively at 1000 DEG C, 500 DEG C during cooling and be cooled to room temperature taking-up;
Step 7, double side chemical polishing; First with absolute ethyl alcohol, wafer is cleaned, then the wafer after cleaning is put into Twp-sided polishing machine and fix; During polishing, add polishing fluid, polishing disk is forced into 0.13Mpa to wafer, and the rotating speed of polishing disk is 1200rpm/min, by after polished wafer washes of absolute alcohol, at room temperature carries out nature cooling; Described polishing fluid component comprises: the granular size of 1% is the cubic boron nitride powder of 3 μm, the APES of 15%, the glycerine of 5%, the polypropylene glycol 400 of 10%, the nano silicon of 1%, make polishing fluid pH value be 12.0 alkaline solution, all the other are deionized water; Alkaline solution is constantly supplemented to keep the pH value of polishing fluid in polishing process;
Step 8, laser get sheet; Wafer after polishing is put into laser cutting machine and passes into protective gas, wafer is cut into corresponding size by demand;
Step 9, printed circuit; Laser is got the silver of the Sapphire wafer surface after sheet slurry printed circuit, be then heated to 450 degrees Celsius and circuit is sintered on sapphire wafer;
Step 10, welding chip; LED chip scaling powder is fixed on printed circuit, is heated to 400 degrees Celsius by chips welding on printed circuit;
Step 11, encapsulation; Fluorescent glue is used sapphire wafer and LED chip to be encapsulated.
The preparation method of sapphire LED silk of the present invention is not limited to the concrete technical scheme described in above-described embodiment, and all employings are equal to replaces the protection range that the technical scheme formed is application claims.
Claims (10)
1. a preparation method for sapphire LED silk, is characterized in that, comprises following concrete steps:
Step one, crystal growth; Pure Al is loaded in the crucible of crystal growing furnace
2o
3raw material, is provided with lifting rod that is rotatable and lifting above described crucible, the lower end of lifting rod is folded with the seed crystal in A crystal orientation, M crystal orientation or C crystal orientation; To vacuumize in crystal growing furnace and pass into protective gas, be warming up to 2100 ~ 2200 DEG C, make Al
2o
3melting, the liquid level temperature controlling melt is 2055 DEG C, and seed crystal is placed in Al
2o
3the upper surface of melt makes itself and melt contacts, continues 0.5 ~ 1h; After seed crystal and melt are fully stained with profit, lift and rotate seed crystal, thus realizing necking down-expansion shoulder-isodiametric growth; In the necking down stage, the liquid level temperature controlling melt is 2050 DEG C, upwards lifts seed crystal with the speed of 3 ~ 5mm/h, rotates seed crystal with the speed of 45 ~ 48r/min; Expand the shoulder stage, the liquid level temperature controlling melt is 2048 DEG C, upwards lifts seed crystal with the speed of 8 ~ 10mm/h, rotates seed crystal with the speed of 50 ~ 55r/min; In the isometrical stage, the liquid level temperature controlling melt is 2052 DEG C, upwards lifts seed crystal with the speed of 5 ~ 8mm/h, rotates seed crystal with the speed of 48 ~ 50r/min; After crystal growth terminates, the temperature in crystal growing furnace is down to 1580 ~ 1680 DEG C, then carries out annealing in process to crystal, control temperature also continues 18 ~ 22h with the speed slow cooling of 80 ~ 100 DEG C/h, thus obtains crystal;
Step 2, crystal draw rod; Orientation is carried out to crystal, then uses and draw excellent machine and carry out drawing rod, thus obtain crystal bar;
Step 3, crystal-cut; Adopt carborundum line cutting equipment to cut crystal bar, thus obtain wafer;
Step 4, grinding; Grinder is adopted to grind wafer; During grinding, add lapping liquid, abrasive disk is forced into 0.02 ~ 0.022Mpa to wafer, and the rotating speed of abrasive disk is 1000 ~ 1200rpm/min; Grind rear washes of absolute alcohol; Described lapping liquid component comprises: the granular size of 0.5 ~ 2% is the cubic boron nitride powder of 10 ~ 20 μm, the APES of 14 ~ 16%, the glycerine of 4 ~ 6%, the polypropylene glycol 400 of 9 ~ 11%, and all the other are deionized water;
Step 5, chamfering; The skive of Digit Control Machine Tool is adopted to carry out chamfered to the corner of wafer;
Step 6, annealing; Wafer is put into annealing furnace, carry out heating up with the speed of 180 ~ 220 DEG C/h and temperature risen to 1600 DEG C, 2 ~ 6h is incubated respectively at 300 DEG C, 800 DEG C, 1600 DEG C during intensification, then lower the temperature with the temperature of 200 DEG C, be incubated 2 ~ 3h respectively at 1000 DEG C, 500 DEG C during cooling and be cooled to room temperature taking-up;
Step 7, double side chemical polishing; First with absolute ethyl alcohol, wafer is cleaned, then the wafer after cleaning is put into Twp-sided polishing machine and fix; During polishing, add polishing fluid, polishing disk is forced into 0.12 ~ 0.15Mpa to wafer, and the rotating speed of polishing disk is 1000 ~ 1500rpm/min, by after polished wafer washes of absolute alcohol, at room temperature carries out nature cooling; Described polishing fluid component comprises: the granular size of 0.5 ~ 2% is the cubic boron nitride powder of 1 ~ 6 μm, the APES of 14 ~ 16%, the glycerine of 4 ~ 6%, the polypropylene glycol 400 of 9 ~ 11%, the nano silicon of 0.5 ~ 2%, make polishing fluid pH value be 11.0 ~ 13.0 alkaline solution, all the other are deionized water; Alkaline solution is constantly supplemented to keep the pH value of polishing fluid in polishing process;
Step 8, laser get sheet; Wafer after polishing is put into laser cutting machine and passes into protective gas, wafer is cut into corresponding size by demand;
Step 9, printed circuit; Laser is got the silver of the Sapphire wafer surface after sheet slurry printed circuit, be then heated to 400 ~ 500 degrees Celsius and circuit is sintered on sapphire wafer;
Step 10, welding chip; LED chip scaling powder is fixed on printed circuit, is heated to 400 ~ 450 degrees Celsius by chips welding on printed circuit;
Step 11, encapsulation; Fluorescent glue is used sapphire wafer and LED chip to be encapsulated.
2. the preparation method of sapphire LED silk according to claim 1, it is characterized in that: in described step one, temperature in crystal growing furnace is down to 1600 DEG C, then carries out annealing in process to crystal, control temperature also continues 22h with the speed slow cooling of 100 DEG C/h.
3. the preparation method of sapphire LED silk according to claim 1, it is characterized in that: in described step 3, the diameter of carborundum line is 0.14 ~ 0.16mm, on carborundum line, adamantine particle diameter is 30 ~ 40 μm, carborundum line moves with the speed of 12 ~ 15m/s when cutting, crystal is 0.2 ~ 0.3mm/min relative to the translational speed of carborundum line, constantly cutting liquid is sprayed to carborundum line, containing particle diameter to be the diamond particles of 20 ~ 30 μm and particle diameter the be corundum in granules of 50 ~ 60 μm in described cutting liquid during cutting.
4. the preparation method of sapphire LED silk according to claim 1, is characterized in that: in described step 4, is the alumina particle of 3 ~ 6 μm in described lapping liquid containing particle diameter.
5. the preparation method of sapphire LED silk according to claim 1, is characterized in that: in described step 6, during intensification, at 300 DEG C of insulation 2h, at 800 DEG C of insulation 3h, at 1600 DEG C of insulation 4h.
6. the preparation method of sapphire LED silk according to claim 1, it is characterized in that: in described step 7, described alkaline solution is KOH.
7. the preparation method of sapphire LED silk according to claim 1, it is characterized in that: in described step 7, described polishing fluid pH value is 12.0.
8. the preparation method of sapphire LED silk according to claim 1, is characterized in that: in described step 7, polishing disk is forced into 0.135Mpa to wafer.
9. the preparation method of sapphire LED silk according to claim 1, it is characterized in that: in described step 8, the diameter of laser beam is 0.015 ~ 0.02mm, and cutting speed is 3 ~ 5mm/s.
10. the preparation method of sapphire LED silk according to claim 1, is characterized in that: protective gas described in step 8 is nitrogen.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111519243A (en) * | 2020-04-28 | 2020-08-11 | 天通银厦新材料有限公司 | Processing method of large-size sapphire panel for unmanned aerial vehicle |
| CN111515792A (en) * | 2020-04-28 | 2020-08-11 | 福建晶安光电有限公司 | Substrate material suitable for graphene growth and manufacturing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090045420A1 (en) * | 2007-08-16 | 2009-02-19 | Philips Lumileds Lighting Company, Llc | Backlight Including Side-Emitting Semiconductor Light Emitting Devices |
| EP2259348A1 (en) * | 2009-03-16 | 2010-12-08 | LG Innotek Co., Ltd. | Semiconductor light emitting device |
| CN103215646A (en) * | 2013-04-02 | 2013-07-24 | 苏州海铂晶体有限公司 | Novel production method of c-orientation sapphire single crystal |
| CN103378227A (en) * | 2012-04-27 | 2013-10-30 | 南亚光电股份有限公司 | Method for forming patterned sapphire substrate |
-
2015
- 2015-06-18 CN CN201510339646.7A patent/CN105185877A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090045420A1 (en) * | 2007-08-16 | 2009-02-19 | Philips Lumileds Lighting Company, Llc | Backlight Including Side-Emitting Semiconductor Light Emitting Devices |
| EP2259348A1 (en) * | 2009-03-16 | 2010-12-08 | LG Innotek Co., Ltd. | Semiconductor light emitting device |
| CN103378227A (en) * | 2012-04-27 | 2013-10-30 | 南亚光电股份有限公司 | Method for forming patterned sapphire substrate |
| CN103215646A (en) * | 2013-04-02 | 2013-07-24 | 苏州海铂晶体有限公司 | Novel production method of c-orientation sapphire single crystal |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111519243A (en) * | 2020-04-28 | 2020-08-11 | 天通银厦新材料有限公司 | Processing method of large-size sapphire panel for unmanned aerial vehicle |
| CN111515792A (en) * | 2020-04-28 | 2020-08-11 | 福建晶安光电有限公司 | Substrate material suitable for graphene growth and manufacturing method thereof |
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Application publication date: 20151223 |