CN101352829B - Method for processing silicon polished section with low-roughness concentration - Google Patents
Method for processing silicon polished section with low-roughness concentration Download PDFInfo
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- CN101352829B CN101352829B CN2007100441555A CN200710044155A CN101352829B CN 101352829 B CN101352829 B CN 101352829B CN 2007100441555 A CN2007100441555 A CN 2007100441555A CN 200710044155 A CN200710044155 A CN 200710044155A CN 101352829 B CN101352829 B CN 101352829B
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Abstract
The invention relates to a processing method of low roughness silicon polished wafers, which comprises a process during which polishing treatment is carried out for silicon single crystal wafers by utilizing a polisher, and the process sequentially comprises a rough polishing process, a moderate polishing process and a fine polishing process. In the fine polishing process, the polish finish is carried out for the silicon single crystal wafers by utilizing polishing cloth and fine polishing slurries are introduced between the polishing cloth and the silicon single crystal wafer surface, and the fine polishing slurry consists of pure water and activators. The surface roughness of the silicon wafer processed by the processing method can be raised to 3 to 5 degree, the performance is steady and the resistivity is uniform.
Description
Technical field:
The present invention relates to physical field, relate in particular to semi-conducting material, particularly silicon polished, a kind of processing method of silicon polished section with low-roughness concentration specifically.
Background technology:
Surpass in 2,000 hundred million dollars the electronic communication semi-conductor market in the current whole world, the semiconductor devices 95% or more is with the silicon materials making, the making with silicon more than 99% of integrated circuit.Relative other semi-conducting material, silicon has cheapness and enriches, is easy to grow into the large-diameter high-purity crystal, and advantage such as hot property and mechanical performance be good.At present the annual production of silicon single crystal flake has reached 6,000,000,000 square inches in the world, and wherein " annual requirement of silicon chip surpasses 2,900,000,000 square inches, is roughly equal to 5800 tons of monocrystalline in the whole world 8.
The needs that the silicon chip ever-larger diameters is that the integrated circuit technique live width attenuates, number of elements increases, die area increases and reduces cost are development trends of silicon materials.Now, external IC production line main product adopts 8 " silicon wafers, and " the silicon wafer transition to 12.In recent years, SiGe/Si (Si epitaxial material) development is very fast, at aspects such as Infrared Detectors, fiber waveguides potential application is arranged also; One of the key technology of manufacturing high speed, anti-irradiation, high-temperature low-pressure and low-power consumption chip SOI (silicon materials on the dielectric substrate) wafer fabrication has obtained the progress of advancing by leaps and bounds, and is very promising.At present, external 3 " the SiC monocrystalline has sample, 2 " 4HS-SiC, 6H-SiC wafer commercialization.
General CZ (Czchralski) is silicon polished, often all is that blemish etc. claim to surface particles; But all do not have its surface roughness is proposed higher requirement; General IC at 8-10, because silicon polished surface roughness height, makes silicon polished unstable properties with silicon polished surface roughness; Resistivity is inhomogeneous, and the adhesive strength of silicon polished film is low.
Summary of the invention:
The object of the present invention is to provide a kind of processing method of silicon polished section with low-roughness concentration, the processing method of described this silicon polished section with low-roughness concentration will solve silicon polished unstable properties of the prior art, the inhomogeneous and silicon polished low technical problem of film adhesive strength of resistivity.
The processing method of this silicon polished section with low-roughness concentration of the present invention comprises a process of utilizing polishing machine that silicon single crystal flake is carried out polishing, described process and smart process of throwing of utilizing order in polishing machine carries out polishing to silicon single crystal flake the process to include and throw in the thick process of throwing, one; Wherein, In described smart process of throwing, utilize polishing cloth that described silicon single crystal flake is polished processing, between the surface of described polishing cloth and silicon single crystal flake, introduce the smart slurry of throwing; The described smart slurry of throwing is made up of pure water and activator; The percentage by weight of described pure water and activator polishes under the temperature conditions that is processed in 26～30 degrees centigrade and carries out between 1:25～35, and the smart flow of throwing the slurry per minute is 300～800ml; The rotating speed of polishing machine is 50～100rpm; Polish pressure is 0.10～0.16Mpa, and the rotating speed of dumping in the polishing machine is 60～80rpm, and the time of polishing processing is 5～10min.
Further, described polishing cloth adopts RODEL205RVC.
Further, described smart the throwing in the slurry, the percentage by weight of pure water and activator is between 1:30.
Further, described activator is FA/O, O
II-7 ((C
10H
21-C
6H
4-O-CH
2CH
2O) 7-H) or O
II-10 ((C
10H
21-C
6H
4-O-CH
2CH
2O) 10-H) or O-20 ((C
12-18H
25-37-C
6H
4O-CH
2CH
2O) 70-H), or FA/O, O
II-7 ((C
10H
21-C
6H
4-O-CH
2CH
2O) 7-H), O
II-10 ((C
10H
21-C
6H
4-O-CH
2CH
2O) 10-H) and O-20 ((C
12-18H
25-37-C
6H
4-O-CH
2CH
2O) 70-H) combination in any.
Further, before the process of carrying out described thick throwing, silicon single crystal flake is carried out chamfer machining, in described chamfer machining process, adopt 800 orders+dual emery wheel of 1500 orders to carry out chamfering.
Further, before the process of carrying out described thick throwing, silicon single crystal flake is carried out the aqueous slkali corrosion, clean then.
Further, described aqueous slkali is the KOH or the NaOH aqueous solution.
The present invention compares with prior art, and its effect is actively with tangible.The present invention introduces surfactant in essence throwing process, under the situation that satisfies normal polished silicon wafer surface requirements, the roughness surperficial to polished silicon wafer is greatly increased, and silicon polished surface roughness can be brought up to 3-5 after the adjustment of smart throwing technology.The chamfering at silicon polished edge adopts meticulous emery wheel, makes the defective of polished silicon wafer reduce, and acceptance rate improves, silicon polished stable performance, and uniform resistivity, the adhesive strength of silicon polished film is high.Adopt the silicon polished of low roughness surface that processing method of the present invention makes, purposes can expand to optoelectronic areas, can make the material substrate of silicon base luminescence diode.
The specific embodiment:
The processing method of a kind of silicon polished section with low-roughness concentration of the present invention comprises a process of utilizing polishing machine that silicon single crystal flake is carried out polishing, described process and smart process of throwing of utilizing order in polishing machine carries out polishing to silicon single crystal flake the process to include and throw in the thick process of throwing, one; Wherein, In described smart process of throwing, utilize polishing cloth that described silicon single crystal flake is polished processing, between the surface of described polishing cloth and silicon single crystal flake, introduce the smart slurry of throwing; The described smart slurry of throwing is made up of pure water and activator; The percentage by weight of described pure water and activator polishes under the temperature conditions that is processed in 28 degrees centigrade and carries out between 1:30, and the smart flow of throwing the slurry per minute is 500ml; The rotating speed of polishing machine is 75rpm; Polish pressure is 0.13Mpa, and the rotating speed of dumping in the polishing machine is 70rpm, and the time of polishing processing is 8min.
Further, described polishing cloth adopts RODEL205RVC.
Further, described activator is FA/O, O
II-7 ((C
10H
21-C
6H
4-O-CH
2CH
2O) 7-H), O
II-10 ((C
10H
21-C
6H
4-O-CH
2CH
2O) 10-H) and O-20 ((C
12-18H
25-37-C
6H
4-O-CH
2CH
2O) 70-H) combination in any.
Further, before the process of carrying out described thick throwing, silicon single crystal flake is carried out chamfer machining, in described chamfer machining process, adopt 800 orders+dual emery wheel of 1500 orders to carry out chamfering.
Further, before the process of carrying out described thick throwing, silicon single crystal flake is carried out the aqueous slkali corrosion, clean then.Further, described aqueous slkali is the NaOH aqueous solution.
Claims (7)
1. the processing method of a silicon polished section with low-roughness concentration; Comprise a process of utilizing polishing machine that silicon single crystal flake is carried out polishing, described process and smart process of throwing of utilizing order in polishing machine carries out polishing to silicon single crystal flake the process to include and throw in the thick process of throwing, one is characterized in that: in described smart process of throwing; Utilize polishing cloth that described silicon single crystal flake is polished processing; Between the surface of described polishing cloth and silicon single crystal flake, introduce the smart slurry of throwing, the described smart slurry of throwing is made up of pure water and activator, and the percentage by weight of described pure water and activator is between 1: 25～35; Polish under the temperature conditions that is processed in 26～30 degrees centigrade and carry out; The smart flow of throwing the slurry per minute is 300～800ml, and the rotating speed of polishing machine is 50～100rpm, and polish pressure is 0.10～0.16Mpa; The rotating speed of dumping in the polishing machine is 60～80rpm, and the time of polishing processing is 5～10min.
2. the processing method of silicon polished section with low-roughness concentration as claimed in claim 1 is characterized in that: described polishing cloth employing RODEL 205 RVC.
3. the processing method of silicon polished section with low-roughness concentration as claimed in claim 1 is characterized in that: described smart the throwing in the slurry, the percentage by weight of pure water and activator is 1: 30.
4. the processing method of silicon polished section with low-roughness concentration as claimed in claim 1, it is characterized in that: described activator is FA/O, O
II-7 ((C
10H
21-C
6H
4-O-CH
2CH
2O) O 7-H),
II-10 ((C
10H
21-C
6H
4-O-CH
2CH
210-H) and O-20 ((C O)
12-
18H
25-
37-C
6H
4-O-CH
2CH
2O) combination in any 70-H).
5. the processing method of silicon polished section with low-roughness concentration as claimed in claim 1; It is characterized in that: before the process of carrying out described thick throwing; Silicon single crystal flake is carried out chamfer machining, in described chamfer machining process, adopt 800 orders+dual emery wheel of 1500 orders to carry out chamfering.
6. the processing method of silicon polished section with low-roughness concentration as claimed in claim 1 is characterized in that: before the process of carrying out described thick throwing, silicon single crystal flake is carried out the aqueous slkali corrosion, clean then.
7. the processing method of silicon polished section with low-roughness concentration as claimed in claim 6, it is characterized in that: described aqueous slkali is the KOH or the NaOH aqueous solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100441555A CN101352829B (en) | 2007-07-24 | 2007-07-24 | Method for processing silicon polished section with low-roughness concentration |
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|---|---|---|---|
| CN2007100441555A CN101352829B (en) | 2007-07-24 | 2007-07-24 | Method for processing silicon polished section with low-roughness concentration |
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| CN101352829A CN101352829A (en) | 2009-01-28 |
| CN101352829B true CN101352829B (en) | 2012-01-11 |
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Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101934490B (en) * | 2010-08-10 | 2011-08-10 | 天津中环领先材料技术有限公司 | Polishing process for ultrahigh-resistivity silicon polished wafer |
| CN101934492B (en) * | 2010-08-10 | 2011-07-13 | 天津中环领先材料技术有限公司 | Polishing process of high-smoothness float-zone silicon polished wafer |
| CN102019582B (en) * | 2010-12-10 | 2012-05-09 | 天津中环领先材料技术有限公司 | Polishing process of 8-inch lightly-doped silicon polished wafer |
| CN102019574B (en) * | 2010-12-10 | 2011-09-14 | 天津中环领先材料技术有限公司 | Wax-free polishing process of ultrathin zone-melting silicon polished slice |
| CN102172878B (en) * | 2010-12-16 | 2012-12-12 | 浙江旭盛电子有限公司 | Method for polishing wafers |
| CN103042463A (en) * | 2013-01-22 | 2013-04-17 | 万向硅峰电子股份有限公司 | Method for controlling surface roughness of IC (Integrated Circuit)-level heavily arseno-silicate-doped polished wafer |
| CN103320018B (en) * | 2013-06-18 | 2014-04-16 | 常州时创能源科技有限公司 | Additive for crystalline silicon polishing solution and application method thereof |
| CN103659468B (en) * | 2013-12-09 | 2016-06-29 | 天津中环领先材料技术有限公司 | A kind of reduce monocrystalline silicon wafer crystal polished silicon wafer chemical burn have wax polishing method |
| CN105364636B (en) * | 2015-09-25 | 2017-11-21 | 宁波市锦泰橡塑有限公司 | A kind of mirror polishing method of detector body inner chamber |
| CN106736881A (en) * | 2016-12-28 | 2017-05-31 | 苏州爱彼光电材料有限公司 | Wafer surface processing and treating method |
| CN109318114A (en) * | 2017-07-31 | 2019-02-12 | 上海新昇半导体科技有限公司 | A kind of final polishing machine of semiconductor crystal wafer and final polishing and cleaning method |
| CN107993936A (en) * | 2017-11-30 | 2018-05-04 | 北京创昱科技有限公司 | Substrate processing method |
| CN108788943B (en) * | 2018-07-13 | 2019-11-01 | 山西太钢不锈钢股份有限公司 | A kind of surface polishing method of use for electronic products austenitic stainless steel |
| CN111251163B (en) * | 2018-11-30 | 2021-04-30 | 有研半导体材料有限公司 | Processing method for polished silicon wafer with hydrophilic surface |
| CN110010458B (en) * | 2019-04-01 | 2021-08-27 | 徐州鑫晶半导体科技有限公司 | Method for controlling surface morphology of semiconductor wafer and semiconductor wafer |
| CN112975578B (en) * | 2019-12-12 | 2022-06-24 | 有研半导体硅材料股份公司 | Polishing method for improving surface roughness of silicon polished wafer |
-
2007
- 2007-07-24 CN CN2007100441555A patent/CN101352829B/en active Active
Non-Patent Citations (2)
| Title |
|---|
| 吴明明.单晶硅片的超精密加工技术研究.《中国优秀硕士学位论文全文数据库》.2005,全文. * |
| 梅燕等.用于超精密硅晶片表面的化学机械抛光(CMP)技术研究.《润滑与密封》.2006,(第09期),全文. * |
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Effective date of registration: 20180914 Address after: 214000 31 Xishan Zhong Jie Road, Xishan economic and Technological Development Zone, Wuxi, Jiangsu Patentee after: Wuxi Hong Jing new energy Co., Ltd. Address before: 201617 808 Mintai Road, Songjiang District, Shanghai Patentee before: Shanghai Guangwei Electric Material Co., Ltd. |
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