CN114101901A - Processing technology capable of integrating micro-nano optical structure - Google Patents
Processing technology capable of integrating micro-nano optical structure Download PDFInfo
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- 230000003287 optical effect Effects 0.000 title claims abstract description 54
- 238000012545 processing Methods 0.000 title claims abstract description 39
- 238000005516 engineering process Methods 0.000 title claims abstract description 29
- 239000013078 crystal Substances 0.000 claims abstract description 85
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 24
- 239000010936 titanium Substances 0.000 claims abstract description 24
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000001816 cooling Methods 0.000 claims abstract description 15
- 238000005245 sintering Methods 0.000 claims abstract description 14
- 239000006184 cosolvent Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 12
- 229910003069 TeO2 Inorganic materials 0.000 claims abstract description 11
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 claims abstract description 11
- 230000010287 polarization Effects 0.000 claims abstract description 9
- 239000002994 raw material Substances 0.000 claims abstract description 9
- 230000008569 process Effects 0.000 claims abstract description 7
- 238000005498 polishing Methods 0.000 claims abstract description 6
- 238000000227 grinding Methods 0.000 claims abstract description 4
- 238000002156 mixing Methods 0.000 claims abstract description 4
- 230000007935 neutral effect Effects 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 239000010437 gem Substances 0.000 claims 4
- 229910001751 gemstone Inorganic materials 0.000 claims 4
- 229910052594 sapphire Inorganic materials 0.000 claims 2
- 239000010980 sapphire Substances 0.000 claims 2
- 238000013461 design Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
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- 230000005540 biological transmission Effects 0.000 description 9
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- 239000002086 nanomaterial Substances 0.000 description 2
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
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- 238000009826 distribution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000007716 flux method Methods 0.000 description 1
- 238000002017 high-resolution X-ray diffraction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
- B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0093—Working by laser beam, e.g. welding, cutting or boring combined with mechanical machining or metal-working covered by other subclasses than B23K
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
- C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
- C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
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Abstract
A processing technology capable of integrating a micro-nano optical structure comprises the following steps: (1) growing: adding Bi2O3、TeO2、H3BO3Fully grinding and mixing, then transferring to a muffle furnace for primary sintering for 10-12h, and cooling to obtain a primary sintering raw material; transferring the primary sintering raw material to a single crystal growth furnace for growth to obtain a crystal; (2) polishing; (3) femtosecond laser: performing femtosecond laser micro-nano processing on the crystal by adopting a titanium gem femtosecond laser; the pulse width of the titanium gem femtosecond laser is set as linear polarization laser of 100-120 fs, the central wavelength is set as 790-800nm, and the repetition frequency is set as l-3 kHz. The invention relates to the processing of an integratable micro-nano optical structureReasonable design of process and processing technology, and uses Te2O3‑B2O3As a cosolvent, to Bi2O3、TeO2、H3BO3Adopts fluxing agent method to synthesize Bi3TeBO9The crystal is subjected to femtosecond laser micro-nano processing by adopting a titanium gem femtosecond laser, has high precision, three-dimensionality, small heat effect and no pollution, forms an optical waveguide microstructure and has wide application prospect.
Description
Technical Field
The invention belongs to the technical field of optical structures, and particularly relates to a processing technology capable of integrating a micro-nano optical structure.
Background
Micro-nano optics is an important development direction of the current novel photoelectronic industry, and plays a great role in a plurality of fields such as optical communication, optical interconnection, optical storage, semiconductor devices and the like. The micro-nano optical structure technology is characterized in that a novel optical functional device is manufactured by introducing a micro-nano optical structure into a related material. Micro-nano optics is optical branching using a microstructure material as an optical element. The design and manufacture of the structure of the micro-nano optical device are critical problems in the development of the micro-nano optical technology, so that the micro-nano optical becomes a critical breakthrough in the development of a novel photoelectron industry. The electromagnetic wave based on the same has the main advantage that a number of brand new functions can be achieved on the basis, and brand new functions can be achieved on the basis, becomes indispensable key science and technology of the basis of the key science and technology which is indispensable in the country of the country in 21 century the country of the essential advantage that the essential is the essential advantage that the basis becomes the essential is the essential advantage that the basis becomes the essential is the basis becomes the basis of realizing many brand-essential is the key science and technology that becomes 21 century the essential is the key science and technology that becomes.
The integrated optical circuit can realize high-speed, stable and low-loss transmission and processing of optical signals in an integrated space. By integrating optical elements with different functions on a chip, an all-optical device with small volume, multiple functions, high speed and large capacity can be prepared on a substrate material, so that the all-optical device can be widely applied to the fields of optical fiber communication, chemical sensing, biomedical treatment, environmental monitoring, spectral research, material science, photon computer research and the like. In order to better realize the integration of a high-performance optical system, a processing technology capable of integrating a micro-nano optical structure needs to be developed.
Disclosure of Invention
The purpose of the invention is as follows: in order to overcome the defects, the invention aims to provide a processing technology capable of integrating a micro-nano optical structure, which is reasonable in design and uses Te2O3-B2O3As a cosolvent, to Bi2O3、TeO2、H3BO3Adopts fluxing agent method to synthesize Bi3TeBO9The crystal is subjected to femtosecond laser micro-nano processing by adopting a titanium gem femtosecond laser, has high precision, three-dimensionality, small heat effect and no pollution, forms an optical waveguide microstructure and has wide application prospect.
The purpose of the invention is realized by the following technical scheme:
a processing technology capable of integrating a micro-nano optical structure comprises the following steps:
(1) growing: adding Bi2O3、TeO2、H3BO3Fully grinding and mixing, then transferring to a muffle furnace for primary sintering for 10-12h, and cooling to obtain a primary sintering raw material; transferring the initial sintering raw material to a single crystal growth furnace, heating to 900-1000 ℃ at a speed of 50-100 ℃/h to obtain high-temperature melt, keeping the temperature for 36-48 hours, and cooling to 10-20 ℃ above the saturation temperature at a speed of 10-30 ℃/h; fixing a cosolvent Te at the lower end2O3-B2O3The seed rod of the seed crystal extends into the single crystal growth furnace from a small hole at the top of the single crystal growth furnace at a vertical pulling speed of 0.005-0.01mm/h to ensure that Te2O3-B2O3The seed crystal is contacted with the high-temperature melt or extends into the high-temperature melt; rotating Te at a rate of 20-30 rpm2O3-B2O3Seed crystals are kept at the constant temperature for 0.5 to 1 hour, and are cooled to the saturation temperature at the cooling rate of 5 to 10 ℃/h; then cooling at a cooling rate of 0.1-0.3 ℃/day to grow the crystal, and lifting the crystal to separate the crystal from the liquid surface after growing for 150 days;
(2) polishing: cutting the crystal a into a size of a multiplied by b multiplied by c, wherein a is 1-3mm, b is 8-10 mm, and c is 8-10 mm, and carrying out optical-grade polishing treatment on the crystal;
(3) femtosecond laser: performing femtosecond laser micro-nano processing on the crystal by adopting a titanium gem femtosecond laser; the pulse width of the titanium gem femtosecond laser is set as linear polarization laser of 100-120 fs, the central wavelength is set as 790-800nm, and the repetition frequency is set as l-3 kHz.
The processing technology capable of integrating the micro-nano optical structure has reasonable design and uses Bi3TeBO9As a cosolvent, to Bi2O3、TeO2 、H3BO3Adopts fluxing agent method to synthesize Bi3Te BO9Crystals, overcomes the problems of melt delamination and high viscosity, and obtains Bi with centimeter dimension3TeBO9The crystal has good crystal quality. The Bi3Te BO9The crystal has the largest SHG coefficient, which is about 20 times that of KDP crystal. Wherein，Te2O3- B2O3A seed rod of the seed crystal extends into the single crystal growth furnace from a small hole at the top of the single crystal growth furnace at a vertical pulling speed of 0.005-0.01mm/h, and the growth interface is ensured to be always maintained near the surface of the boron-rich melt by setting a vertical pulling process and at a slower pulling speed, so that melt layering caused by the density difference of raw materials is reduced and avoided; to overcome the problem of high melt viscosity and minimize melt delamination, Bi is rotated at a rate of 20-30 rpm3TeBO9And (5) seed crystal.
According to the invention, a titanium gem femtosecond laser is adopted to carry out femtosecond laser micro-nano processing on the crystal, and the focused femtosecond pulse laser constructs a three-dimensional micro-nano structure in the crystal according to a design pattern, so that the method has the advantages of high precision, three-dimensionality, small heat effect, no pollution and the like. The refractive index of the processing area is changed through the interaction of the laser and the crystalline medium material, and the optical waveguide microstructure is formed.
Further, according to the processing technology of the integrated micro-nano optical structure, oxygen is needed to participate in the growth process of the step (1), and the configured Bi2O3、TeO2、H3BO3In a molar ratio of 3:2: 2.
The reaction equation is as follows: 3Bi2O3＋2TeO2＋2H3BO3＋O2→2 Bi3TeBO9＋３H2O。Further, in the processing technology capable of integrating the micro-nano optical structure, in the step (1), a cosolvent Te2O3- B2O3The mass ratio of the crystal to the cosolvent Te is 1:3-52O3-B2O3Middle Te2O3And B2O3Is 3: 1.
The invention adopts Te2O3- B2O3As a cosolvent according to Te2O3- B2O3Phase diagram，Te2O3And B2O3Has a lowest melting point of B2O3=25.5mol% when Te2O3And B2O3At a molar ratio of 3:1, Te2O3- B2O3The melting temperature of the system is low, and the melting temperature of the fluxing agent system can be effectively reduced at about 680 ℃.
Further, in the processing technology capable of integrating the micro-nano optical structure, in the step (1), the temperature of the primary sintering is set to be 500-; the saturation temperature was 795 ℃.
Further, in the processing technology capable of integrating the micro-nano optical structure, in the step (2), before the femtosecond laser micro-nano processing, a neutral density filter is adopted to carry out coarse adjustment on the titanium gem femtosecond laser, and then a series of half-wave plates and linear polarizers positioned in front of the neutral density filter are adopted to carry out continuous fine adjustment until the single pulse energy of the titanium gem femtosecond laser acting on the crystal is 0.8-0.9 muJ.
Further, in the processing technology capable of integrating the micro-nano optical structure, in the step (2), the titanium gem femtosecond laser is operated as follows: the femtosecond laser beam of the titanium gem femtosecond laser is focused below the b multiplied by c surface of the crystal by a microscope objective with the numerical aperture of 0.4 and the magnification of 20x, and the crystal on the three-dimensional electric platform is scanned along the b axis direction at the speed of 0.1-0.3 mm/s, and damage traces with the length of 5-8 mu m are formed on the a multiplied by b and a multiplied by c end surfaces of the crystal.
Further, the processing technology of the integrated micro-nano optical structure repeats the operation steps, and performs parallel scanning for a plurality of times at different positions of the crystal until a periodic array structure with a hexagonal cross section is formed, and the transverse interval between two adjacent damage traces is 5-8 μm.
Compared with the prior art, the invention has the following beneficial effects:
(1) the invention relates to a processing technology capable of integrating a micro-nano optical structure, which uses Te2O3-B2O3As a cosolvent, to Bi2O3、TeO2 、H3BO3By fluxingAgent method synthesizes Bi3TeBO9Crystals, overcomes the problems of melt delamination and high viscosity, and obtains Bi with centimeter dimension3TeBO9The crystal quality of the grown crystal is good;
(2) according to the processing technology capable of integrating the micro-nano optical structure, the titanium gem femtosecond laser is adopted to carry out femtosecond laser micro-nano processing on the crystal, and the focused femtosecond pulse laser constructs the three-dimensional micro-nano structure in the crystal according to the design pattern, so that the processing technology has the advantages of high precision, three-dimensionality, small heat effect, no pollution and the like. The refractive index of the processing area is changed through the interaction of the laser and the crystalline medium material, and the optical waveguide microstructure is formed.
Drawings
FIG. 1 is a rocking curve diagram of (200) and (002) crystal planes of a crystal obtained in example 1 of the invention capable of integrating a micro-nano optical structure;
fig. 2 is a graph showing the variation of the transmission power of the micro-nano optical structure along with the same 1064nm full-angle incident light power, which is obtained in example 2 of the invention and can integrate the micro-nano optical structure.
Detailed Description
The technical solutions in the embodiments of the present invention will be described in detail and fully with reference to the accompanying fig. 1-2 and the specific experimental data, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The following embodiments provide a processing technology capable of integrating micro-nano optical structures.
Example 1
Preparation of crystals
Adding Bi2O3、TeO2、H3BO3Fully grinding and mixing the Bi2O3、TeO2、H3BO3Is 3:2:2, then transferred into a muffle furnace for primary sintering for 12 hours, and the temperature of the primary sintering isSetting the temperature to 520 ℃, and cooling to obtain a primary combustion raw material; transferring the primary sintering raw material to a single crystal growth furnace, heating to 1000 ℃ at a speed of 60 ℃/h to obtain high-temperature melt, keeping the temperature for 36 hours, and cooling to a saturation temperature of 810 ℃ at a speed of 20 ℃/h; fixing a cosolvent Te at the lower end2O3-B2The seed rod of the O seed crystal extends into the single crystal growth furnace from a small hole at the top of the single crystal growth furnace at a vertical pulling speed of 0.005mm/h to ensure that Te2O3-B2The O seed crystal and the high-temperature melt are extended into the high-temperature melt; rotating Te at a rate of 30 rpm2O3-B2O3Keeping the temperature of the seed crystal for 1 hour, and cooling to the saturation temperature of 795 ℃ at the cooling rate of 5 ℃/h; then the temperature is reduced at the rate of 0.1 ℃/day to grow the crystal, and after the crystal is grown for 120-150 days, the crystal is lifted to separate from the liquid surface, thus obtaining the crystal of the embodiment 1.
Example 2
And (3) continuing to prepare the crystal obtained in the embodiment 1 into an integrated micro-nano optical structure.
Cutting the crystal a into a size of a multiplied by b multiplied by c, wherein a is 2mm, b is 10 mm, and c is 100 mm, and performing optical-grade polishing treatment on the crystal; femtosecond laser: performing femtosecond laser micro-nano processing on the crystal by adopting a titanium gem femtosecond laser; before the femtosecond laser micro-nano processing, a neutral density filter is adopted to carry out coarse adjustment on a titanium gem femtosecond laser, and then a series of half-wave plates and linear polarizers positioned in front of the neutral density filter are adopted to carry out continuous fine adjustment until the single pulse energy of the titanium gem femtosecond laser acting on the crystal is 0.8 muJ; the pulse width of the titanium gem femtosecond laser is set as linear polarization laser of 100 fs, the central wavelength is set as 795nm, and the repetition frequency is set as 2 kHz.
The titanium gem femtosecond laser comprises the following operation steps: the femtosecond laser beam of the titanium gem femtosecond laser is focused below the b multiplied by c surface of the crystal by a microscope objective with the numerical aperture of 0.4 and the magnification of 20x, the crystal positioned on a three-dimensional electric platform is scanned along the b axis direction at the speed of 0.1 mm/s, damage traces with the length of 8 mu m are formed on the a multiplied by b and a multiplied by c end surfaces of the crystal, and a plurality of times of parallel scanning is carried out on different positions of the crystal until a periodic array structure with a hexagonal cross section is formed, and the transverse interval between two adjacent damage traces is 5-8 mu m.
Effect verification:
the crystal quality of the crystal obtained in example 1 and that of comparative example 1 were measured, and the rocking curves of the (200) and (002) crystal planes were measured by a high-resolution XRD diffractometer, and the results are shown in fig. 1.
The test results showed that the crystal obtained in example 1 had good symmetry of rocking curves of (200) and (002) crystal planes, sharp peak shape without cleavage, and full width at half maximum (FWHM) of 62.23 'and 53.12', respectively, indicating that Bi of example 1 grown by flux method was Bi3TeBO9The crystallinity of the single crystal is higher.
The waveguide property detection is performed on the integrated micro-nano optical structure obtained in the embodiment 2, and the waveguide property detection transmission characteristic test is based on a typical end face coupling system. The probe light is a linear polarized laser light of 1064nm wavelength output by a continuous solid-state laser. And adjusting the polarization direction of the incident detection light through a half-wave plate, and detecting the polarization characteristic of the integrated micro-nano optical structure obtained in the embodiment 2 in the light transmission. The laser is converged and coupled to the waveguide incident end surface through a microscope objective with the magnification of 25x, and is collected into a near-infrared CCD camera from the emergent end surface of the waveguide microstructure through another objective with the same parameters, so that the near-field mode distribution of different light guide microstructures is presented. The transmission loss of the microstructure can be obtained by directly detecting the power calculation of the incident and emergent ends of the transmission laser, and the result is shown in fig. 2.
Test results show that the laser power transmitted along each polarization direction of the integratable micro-nano optical structure obtained in the embodiment 2 is almost the same, so that the light guide transmission in the all-angle direction can be supported, and the transmission performance is more excellent.
In addition, the loss of the integratable micro-nano optical structure obtained in the above embodiment 2 under TM and TE polarization is 0.58dB and 0.50dB, respectively, which shows that the microstructure thereof has excellent transmission in the orthogonal polarization direction.
In summary, the integrated micro-nano optical structure obtained in the embodiment 2 shows excellent waveguide performance, and a good foundation is laid for integration of a multifunctional photonic device.
The invention has many applications, and the above description is only a preferred embodiment of the invention. It should be noted that the above examples are only for illustrating the present invention, and are not intended to limit the scope of the present invention. It will be apparent to those skilled in the art that various modifications can be made without departing from the principles of the invention and these modifications are to be considered within the scope of the invention.
Claims (7)
1. A processing technology capable of integrating a micro-nano optical structure is characterized by comprising the following steps:
(1) growing: adding Bi2O3、TeO2、H3BO3Fully grinding and mixing, then transferring to a muffle furnace for primary sintering for 10-12h, and cooling to obtain a primary sintering raw material; transferring the initial sintering raw material to a single crystal growth furnace, heating to 900-1000 ℃ at a speed of 50-100 ℃/h to obtain high-temperature melt, keeping the temperature for 36-48 hours, and cooling to 10-20 ℃ above the saturation temperature at a speed of 10-30 ℃/h; fixing a cosolvent Te at the lower end2O3-B2O3The seed rod of the seed crystal extends into the single crystal growth furnace from a small hole at the top of the single crystal growth furnace at a vertical pulling speed of 0.005-0.01mm/h to ensure that Te2O3-B2O3The seed crystal is contacted with the high-temperature melt or extends into the high-temperature melt; rotating Te at a rate of 20-30 rpm2O3-B2O3Seed crystals are kept at the constant temperature for 0.5 to 1 hour, and are cooled to the saturation temperature at the cooling rate of 5 to 10 ℃/h; then cooling at a cooling rate of 0.1-0.3 ℃/day to grow the crystal, and lifting the crystal to separate the crystal from the liquid surface after growing for 150 days;
(2) polishing: cutting the crystal a into a size of a multiplied by b multiplied by c, wherein a is 1-3mm, b is 8-10 mm, and c is 8-10 mm, and carrying out optical-grade polishing treatment on the crystal;
(3) femtosecond laser: performing femtosecond laser micro-nano processing on the crystal by adopting a titanium gem femtosecond laser; the pulse width of the titanium gem femtosecond laser is set as linear polarization laser of 100-120 fs, the central wavelength is set as 790-800nm, and the repetition frequency is set as l-3 kHz.
2. The processing technology of the integratable micro-nano optical structure according to claim 1, wherein oxygen is required to participate in the growth process of the step (1), and the configured Bi2O3、TeO2、H3BO3In a molar ratio of 3:2: 2.
3. The processing technology of the integratable micro-nano optical structure according to claim 1, wherein in the step (1), a cosolvent Te2O3- B2O3The mass ratio of the crystal to the cosolvent Te is 1:3-52O3-B2O3Middle Te2O3And B2O3Is 3: 1.
4. The process for processing an integratable micro-nano optical structure according to claim 1, wherein in the step (1), the temperature of the primary sintering is set to 500-550 ℃; the saturation temperature was 795 ℃.
5. A process for fabricating an integratable micro-nano optical structure according to claim 1, wherein in the step (2), before the micro-nano processing of the femtosecond laser, a neutral density filter is used to perform coarse adjustment on the titanium sapphire femtosecond laser, and then a series of half-wave plates and linear polarizers are used to perform continuous fine adjustment until the single pulse energy of the titanium sapphire femtosecond laser acting on the crystal is 0.8-0.9 muJ.
6. The processing technology of the integratable micro-nano optical structure according to the claim 1, wherein in the step (2), the operation steps of the titanium gem femtosecond laser are as follows: the femtosecond laser beam of the titanium gem femtosecond laser is focused below the b multiplied by c surface of the crystal by a microscope objective with the numerical aperture of 0.4 and the magnification of 20x, and the crystal on the three-dimensional electric platform is scanned along the b axis direction at the speed of 0.1-0.3 mm/s, and damage traces with the length of 5-8 mu m are formed on the a multiplied by b and a multiplied by c end surfaces of the crystal.
7. A process for fabricating an integratable micro-nano optical structure according to claim 6, wherein the above steps are repeated, and several parallel scans are performed at different positions of the crystal until a periodic array structure with a hexagonal cross section is formed, and a lateral distance between two adjacent damage traces is 5-8 μm.
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