CN102277088A

CN102277088A - Polishing solution for stainless carrier disc and usage thereof

Info

Publication number: CN102277088A
Application number: CN2011101206760A
Authority: CN
Inventors: 姚建明
Original assignee: SHANGHAI SHUANGMING GUANGXUE TECHNOLOGY CO LTD
Current assignee: SHANGHAI SHUANGMING GUANGXUE TECHNOLOGY CO LTD
Priority date: 2011-05-11
Filing date: 2011-05-11
Publication date: 2011-12-14

Abstract

The invention relates to a polishing solution, especially relates to a polishing solution used for grinding glass products. The invention also relates to a usage of the polishing solution, especially relates to a usage of the polishing solution which is used for grinding glass products. The polishing solution provided by the invention can improve the polishing speed, and reduce the damage to the articles which are polished. The polishing solution comprises the following ingredients: silica sol with the thickness of 32 nm and having strong uniformity as main ingredients which is added in organic base with hydroxy and diamine to control the pH value of the solution within 10-12; and 1-2 wt% of surfactant. The concentration of the prepared polishing solution is controlled within 20-23 %, and the working temperature is kept between about 30 DEG C and 40 DEG C.

Description

The polishing fluid and the using method that are used for stainless carrier plate

Technical field

The present invention relates to a kind of prescription of polishing fluid, specially refer to the polishing fluid that is used for the grinding glasswork.

The invention still further relates to a kind of using method of polishing fluid, specially refer to the using method of the polishing fluid that is used for the grinding glasswork.

Background technology

The call of the global low-carbon economy that in the global climate conference of Copenhagen, proposes at present, high-power LED illumination becomes the very powerful and exceedingly arrogant energy-conservation magic weapon in the whole world, various countries carry out the HB-LED project one after another now, the key component sapphire epitaxial substrate of this project becomes the key factor of restriction gan (GAN) growth, who can obtain competent substrate supply, and whom has just determined can seize the first opportunity in the high-brightness LED project.Traditional sapphire required time of processing is quite long, be optimized by configuration polishing fluid, can improve the speed and the disposable good article rate of the processing of Sapphire Substrate substrate to a great extent, thereby realize stably to prepare the ultra-smooth sapphire wafer of not damaged layer.

Summary of the invention

The invention provides a kind of polishing fluid, it can improve polishing velocity, reduces the damage to polished thing.

For finishing the foregoing invention purpose, the present invention is achieved in that a kind of polishing fluid that is used for stainless carrier plate, it is characterized in that it comprises following composition: adopt the stronger silicon dioxide gel of homogeneity about 32nm to allocate the pH value that the organic bases that has hydroxyl and diamine base makes it solution into and be controlled between 10～12 as main raw material; The tensio-active agent that adds 1%-2%; The polishing fluid concentration that is mixed with is controlled at 20%-23%; And keep working temperature about the 30-40 degree.

In this prescription, medium is selected the 32nm size particles for use, by our secular experiment, do for glass crystal and add man-hour, that selected for use is 30nm in the past, this medium is when rubbing down, damage for body surface, be less than the medium of 32nm size in theory, but,, produce reorganization from the medium that makes part owing to can produce group's picture now at the medium of 30nm by after pH value is raise, thereby exert an influence for polishing, behind the silicon dioxide gel of having selected 32nm for use, just can not produce molecular recombination and now look like.Medium should be selected alkaline medium for use, because sapphire chemical property is both sexes: in acidic medium, reaction product is easily dissolved, the oxidizing power of oxygenant is stronger, but cross strong oxidisability and easily cause non-homogeneousization corrosion, influence local planeness, and general polissoir all is made of metal, acidic medium can etching apparatus, to wafer pollute and its under alkaline medium, the oxidation capacity of oxygenant a little less than, but, because alkaline medium can etching apparatus, and is free from environmental pollution, and under alkaline condition the good stability of silicon dioxide gel, high pH value can effectively prevent the silicon dioxide gel precipitation simultaneously, this is because silicon-dioxide mainly is form with orthosilicic acid radical ion and metasilicic acid radical ion exists, and all electronegative, so be difficult for the generation gel.In the time of between pH value is in 10～12, both can prevent that precipitation from producing, and can strengthen the chemical action in the polishing again, thereby improve polishing speed.But when pH value was excessive, polishing speed was downward trend on the contrary.

Technique scheme is done further to improve, in above-mentioned prescription, add the liquid detergent of trace.In use, can produce certain impurity by long friction, at this moment can eliminate these impurity, add the suspensibility that can increase polishing fluid behind the cleaning agent in addition.

Second goal of the invention of the present invention be, the using method of above-mentioned polishing fluid is provided, and at first polishing fluid carried out preheating, is preheated to 30 degrees centigrade; Be injected in the polishing device through equipment; The temperature of monitoring polishing fluid in the grinding process; When the polishing fluid temperature is spent greater than 40, cool off by cooling apparatus and to make it get back to 30-40 degree centigrade.The method that polishing fluid is heated that this patent provides, and then use, this method is applicable to the grinding of ultrathin crystal glass; In ultrathin crystal glass process; Be that secondary adds under most of feelings, just original very thin on glass processing; These glass can be very sensitive to the thermotonus of polishing fluid, therefore, allow polishing fluid be operated in optimum regime always.Prove that by experiment the temperature of its polishing fluid should be at 40 degree.

Technique scheme is further advanced to change, when suspended substance appears in the polishing fluid surface, add the liquid detergent of 0.25%-1%.Suspended substance can occur in the process of lapping, at this moment the impurity that produces when these all are grinding, inject certain liquid detergent and can reduce suspended substance, also wants to strengthen the whole suspensibility of polishing fluid simultaneously.Thereby help the discharging that impurity grinds in lower floor.

Embodiment

A kind of polishing fluid that is used for stainless carrier plate, it comprises following composition: adopt the stronger silicon dioxide gel of homogeneity about 32nm to allocate the pH value that the organic bases that has hydroxyl and diamine base makes it solution into as main raw material and be controlled between 10～12; The tensio-active agent that adds 1%-2%; The polishing fluid concentration that is mixed with is controlled at 20%-23%; And keep working temperature about the 30-40 degree.

In use, at first polishing fluid is carried out preheating, be preheated to 30 degrees centigrade; Be injected in the polishing device through equipment; The temperature of monitoring polishing fluid in the grinding process; When the polishing fluid temperature is spent greater than 40, cool off by cooling apparatus and to make it get back to 30-40 degree centigrade.After being ground to 30 minutes to one hour, in the polishing fluid that adds once more, put into the liquid detergent of 0.25%-1%.

Claims

1. a polishing fluid that is used for stainless carrier plate is characterized in that, it comprises following composition:

Adopt the stronger silicon dioxide gel of homogeneity about 32nm as main raw material

Allocating the pH value that the organic bases that has hydroxyl and diamine base makes it solution into is controlled between 10 ~ 12;

The tensio-active agent that adds 1%-2%;

The polishing fluid concentration that is mixed with is controlled at 20%-23%; And keep working temperature about the 30-40 degree.

2. a kind of polishing fluid that is used for stainless carrier plate according to claim 1 is characterized in that: the liquid detergent that adds trace in above-mentioned prescription.

3. a method of using the polishing fluid of aforesaid right requirement 1 is characterized in that: at first polishing fluid is carried out preheating, be preheated to 30 degrees centigrade; Be injected in the polishing device through equipment; The temperature of monitoring polishing fluid in the grinding process; When the polishing fluid temperature is spent greater than 40, cool off by cooling apparatus and to make it get back to 30-40 degree centigrade.

4. the using method of a kind of polishing fluid according to claim 3 is characterized in that: when suspended substance appears in the polishing fluid surface, add the liquid detergent of 0.25%-1%.