CN1858132A - Polishing liquid for grinding and polishing micro crystal glass - Google Patents
Polishing liquid for grinding and polishing micro crystal glass Download PDFInfo
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- CN1858132A CN1858132A CN 200610013978 CN200610013978A CN1858132A CN 1858132 A CN1858132 A CN 1858132A CN 200610013978 CN200610013978 CN 200610013978 CN 200610013978 A CN200610013978 A CN 200610013978A CN 1858132 A CN1858132 A CN 1858132A
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- polishing
- polishing fluid
- promoting agent
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- alkali
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Abstract
The present invention discloses polishing liquid for grinding and polishing microcrystal glass. The polishing liquid consists of silica sol 30-90 vol%, organic amine alkali 1-10 vol%, activator 0.5-5 vol%, KOH solution 0.5-5 vol%, and deionized water for the rest. Under CMP and high pH condition, silica as the main component of microcrystal glass is converted fast into stable silicate. The present invention has composite alkali to form high pH value, homogeneous and easy-to-clean silica sol as abrasive, organic alkali and activator to make the silica sol kernel form stable film without dissolving at pH value over 12.5. The present invention has no scoring, high polishing rate, high flowability, no precipitate and easy cleaning.
Description
Technical field
The present invention relates to the chemical Mechanical Polishing Technique field, more particularly, relate to a kind of polishing fluid that is used for the optical crystal chip grinding and polishing.
Background technology
Devitrified glass is a class base mateiral that is applied to electronics, microelectronics, optoelectronic areas, being mainly used in the second generation computer hard disk and having function components and parts such as photoelectricity, thermoelectricity, acousto-optic, magneto-optic, is the base mateiral of making aircraft control, inertial navigation, guidance control optical element.Research of Glass-ceramics is the national defence main project, because the singularity of its Application Areas, the surfaceness that requires devitrified glass is less than 0.1 nanometer, and opposite shape, defect and degree of cleaning etc. have strict demand simultaneously.Military and high quality optical element all uses the pitch polishing at present, but because the pitch polishing still is in manual work stages, the human factor influence is big, the surface working cycle is long and roughness is big, yield rate is low, easily cause the limit of collapsing; And employing CeO
2Abrasive material grinds, and this abrasive material generally adopts disintegrating process to make, and exists particle inhomogeneous, rough problem, these can cause detrimentally affect to quality of finish, the surface is produced scratch, and adopt this abrasive material also to have not easy cleaning, problem such as operation is loaded down with trivial details.
The above problem that exists in the devitrified glass polishing has become the obstacle that devitrified glass obtains wide popularization and application, for improving polishing speed, some companies of the U.S. adopt big particle diameter abrasive material (about 130nm) to improve mechanical effect in the polishing process as: companies such as Cabot, Rodel, and then the raising polishing speed, but this method has also produced surface tear simultaneously, residual particles is difficult to problems such as cleaning, mobile poor, the easy precipitation of polishing slurries.
Summary of the invention
The present invention is in order to overcome the surface tear that has devitrified glass now and exist in glossing with CMP (chemically machinery polished) polishing fluid, the technical problem of collapsing limit and cleaning, and provide a kind of chemical action strong, be easy to clean, effectively solve the scuffing problem, the polishing speed height, good fluidity does not have the polishing fluid that is used for grinding and polishing micro crystal glass that precipitation produces.
In the CMP condition, the main body silicon-dioxide (acidic oxide) of devitrified glass is converted into soluble silicate fast under high pH value, form high pH value with compound alkali, adopt the silicon sol of the good easy cleaning of homogeneity to do abrasive material, organic bases makes silicon dioxide gel glue karyomorphism become a stable film with promoting agent, make PH greater than 12.5 still very stable, can not dissolve.
The present invention is used for the composition of polishing fluid of grinding and polishing micro crystal glass and volume % than composed as follows:
Silicon sol 30～90; Organic amine alkali 1～10;
Promoting agent 0.5～5; KOH solution 0.5～5;
The deionized water surplus.
The composition of the optimal components ratio of polishing fluid of the present invention and volume % are than composed as follows:
Silicon sol 50～80; Organic amine alkali 3～8;
Promoting agent 1.5～4; 25% KOH solution 0.5～3;
The deionized water surplus.
Silicon sol of the present invention is the solvent-borne type abrasive silica, concentration 10%～50%, particle size range 15～100nm.
Amine alkali of the present invention is poly-hydroxy polyamines class organic bases, as tetrahydroxyethyl-ethylene diamine, trolamine, tetramethyl-oxyammonia, tetraethyl-oxyammonia.
Promoting agent of the present invention is FA/OI type promoting agent, JFC (the secondary alkyl ethoxylated of polyoxyethylene), O
II-7 ((C
10H
21-C
6H
4-O-CH
2CH
2O)
7-H), O
II-10 ((C
10H
21-C
6H
4-O-CH
2CH
2O)
10-H), O-20 (C
12-18H
25-37-C
6H
4-O-CH
2CH
2O)
70-H) etc.
The present invention has following beneficial effect compared with prior art:
The main component of devitrified glass is a silicon-dioxide, silicon is the maxivalence tetravalence, and the chemical property of silicon-dioxide is more stable, so can not take redox reaction, can only be translated into water-soluble material by bases, not only speed of reaction can be accelerated, also surfaceness can be effectively reduced.The present invention increases chemical action in devitrified glass CMP for these reasons, promptly strengthens SiO
2The chemical reaction on surface is converted into the solubility amine salt, breaks away from reaction surface.Thereby avoid increasing the viscosity of abrasive grain and polishing fluid, solved scuffing and adsorptive effectively and removed problem.
1. the present invention adopts the polishing fluid of high pH value (10.5～13.5), thereby has realized the polishing two-forty.
2. the present invention adopts organic amine alkali and the compound alkali of mineral alkali blended to regulate pH value, organic bases makes silicon dioxide gel glue karyomorphism become a stable film with promoting agent, makes silicon sol also can not dissolve under high pH value state, and polishing fluid is in stable condition, and reaction product is solvable, easily removes.
3. add the FA/O tensio-active agent among the present invention and accelerate the surface quality transmission, it is good to guarantee at high spot and recess polishing speed selectivity; Guarantee planeness, effectively reduced surfaceness.
4. adopt granularity 15～100nm, the SiO of concentration 10～50wt%
2The water-sol has solved the scuffing problem effectively as the CMP abrasive material.
The effect of each component is respectively among the present invention:
With the nanometer grade silica is abrasive material, and its hardness is less, is evenly distributed, and can effectively reduce the scratch resistant problem; And good fluidity, nothing precipitate, polishing after product viscosity is little, and follow-up cleaning is simple; And abrasive silica is nontoxic, pollution-free, is the ideal abrasive material.
Organic amine alkali is as pH value conditioning agent, the pH value can be transferred to 10～12, secondly can serve as buffer reagent, when polishing fluid local pH value changes, the hydroxyl of release itself is adjusted the pH value rapidly, make polishing fluid keep stable p H value, thereby it is even to make oxide surface remove speed everywhere, can obtain the better parallel degree.Many hydroxyls polyamines is the very big macromolecule organic of molecular weight in addition, be easy to generate very easily water-soluble stable amine salt silicic acid amine with the reaction of devitrified glass surface silica dioxide, this reaction product molecular weight is very big, under the rubbing effect of pressure effect and abrasive material and cloth, be easy to break away from the surface, thereby the machinery that has quickened in the CMP process is removed process, has improved polishing speed.The effect of mineral alkali KOH solution also is adjusting pH value, and KOH solution alkalescence is bigger, can be easy to regulate pH value to a high value.The present invention adopts the compound alkali of organic amine alkali and mineral alkali mixed preparing, overcomes KOH and be easy to generate the shortcoming of colloidal sol when the adjusting silicon sol is near pH value 13, and pass through the shock absorption of organic amine alkali, can make the pH value of polishing fluid keep stable.
FA/OI type promoting agent effluent north polytechnical university's independent development is also produced, and can accelerate the surface quality transmission, and it is good to guarantee at high spot and recess polishing speed selectivity.Guarantee planeness, effectively reduced surfaceness.And can effectively solve the cleaning problem of residual particles.
Embodiment
Below in conjunction with embodiment the present invention is described further.
The composition of polishing fluid embodiment 1～embodiment 5 of the present invention and volume (L) are composed as follows:
| Silicon sol | Organic amine alkali | 25%KOH solution | Promoting agent | Deionized water | |
| 1 | Concentration 40%, particle diameter 35～40nm, 2L | Tetrahydroxyethyl-ethylene diamine 0.1L | 0.009L | FA/OI type promoting agent 0.02L | 2L |
| 2 | Concentration 20%, particle diameter 15～20nm, 3L | Tetrahydroxyethyl-ethylene diamine 0.8L | 0.02L | JFC 0.20L | 7L |
| 3 | Concentration 10%, particle diameter 55～60nm, 8L | Trolamine 0.25L | 0.045L | JFC 0.5L | 1.5L |
| 4 | Concentration 50%, particle diameter 75～80nm, 6L | Trolamine 0.9L | 0.03L | FA/OI type promoting agent 0.2L | 3L |
| 5 | Concentration 30%, particle diameter 95～100nm, 9L | Trolamine 1L | 0.06L | FA/OI type promoting agent 0.5L | 1L |
Sketch preparation process of the present invention with embodiment 1:
Get particle diameter 35～40nm silicon sol solution 2L, deionized water 2L, tetrahydroxyethyl-ethylene diamine 100mL, FA/OI type promoting agent 20mL, 25% KOH solution 9ml.Silicon sol solution 2L is added deionized water 2L agitation and dilution, add the KOH solution 9ml of organic bases hydroxyethylethylene diamine 100mL and 25% while stirring, stir adding FA/OI type promoting agent 20ml at last.
Claims (5)
1. a polishing fluid that is used for grinding and polishing micro crystal glass is characterized in that, the composition of described polishing fluid and volume % are than composed as follows:
Silicon sol 30～90; Organic amine alkali 1～10;
Promoting agent 0.5～5; KOH solution 0.5～5;
The deionized water surplus.
2. polishing fluid according to claim 1 is characterized in that, the composition of described polishing fluid and volume % are than composed as follows:
Silicon sol 50～80; Amine alkali 3～8;
Promoting agent 1.5～4; 25% KOH solution 0.5～3;
The deionized water surplus.
3. polishing fluid according to claim 1 and 2 is characterized in that, described silicon sol is the solvent-borne type abrasive silica, concentration 10%～50%, particle size range 15～100nm.
4. polishing fluid according to claim 1 and 2 is characterized in that, described organic amine alkali is poly-hydroxy polyamines class organic bases, is tetrahydroxyethyl-ethylene diamine, trolamine, tetramethyl-oxyammonia, tetraethyl-oxyammonia.
5. polishing fluid according to claim 1 and 2 is characterized in that, described promoting agent is FA/OI type promoting agent, JFC, O
II-7 ((C
10H
21-C
6H
4-O-CH
2CH
2O)
7-H), O
II-10 ((C
10H
21-C
6H
4-O-CH
2CH
2O)
10-H), O-20 (C
12-18H
25-37-C
6H
4-O-CH
2CH
2O)
70-H).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610013978 CN1858132A (en) | 2006-05-31 | 2006-05-31 | Polishing liquid for grinding and polishing micro crystal glass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610013978 CN1858132A (en) | 2006-05-31 | 2006-05-31 | Polishing liquid for grinding and polishing micro crystal glass |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1858132A true CN1858132A (en) | 2006-11-08 |
Family
ID=37297090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200610013978 Pending CN1858132A (en) | 2006-05-31 | 2006-05-31 | Polishing liquid for grinding and polishing micro crystal glass |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1858132A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101972753A (en) * | 2010-07-21 | 2011-02-16 | 河北工业大学 | Method for cleaning surface of magnesium aluminum alloy subjected to chemically mechanical polishing |
| CN102010662A (en) * | 2010-07-21 | 2011-04-13 | 天津晶岭微电子材料有限公司 | Preparation method of ceramic-glass polishing solution |
| CN102277088A (en) * | 2011-05-11 | 2011-12-14 | 上海双明光学科技有限公司 | Polishing solution for stainless carrier disc and usage thereof |
| CN101693813B (en) * | 2009-09-01 | 2013-04-10 | 湖南皓志新材料股份有限公司 | Silicon-based fine polishing liquid |
| CN104860541A (en) * | 2015-05-12 | 2015-08-26 | 中国船舶重工集团公司第七一七研究所 | Polishing solution and polishing method |
| CN105017970A (en) * | 2015-06-30 | 2015-11-04 | 安徽德诺化工有限公司 | Polishing liquid for sapphire substrate, and preparation method thereof |
| CN111777951A (en) * | 2020-08-11 | 2020-10-16 | 陕西国防工业职业技术学院 | Chemical mechanical polishing solution for microcrystalline glass |
| CN113956798A (en) * | 2021-10-21 | 2022-01-21 | 河南联合精密材料股份有限公司 | Polycrystalline cerium oxide polishing solution for polishing microcrystalline glass and preparation method and application thereof |
-
2006
- 2006-05-31 CN CN 200610013978 patent/CN1858132A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101693813B (en) * | 2009-09-01 | 2013-04-10 | 湖南皓志新材料股份有限公司 | Silicon-based fine polishing liquid |
| CN101972753A (en) * | 2010-07-21 | 2011-02-16 | 河北工业大学 | Method for cleaning surface of magnesium aluminum alloy subjected to chemically mechanical polishing |
| CN102010662A (en) * | 2010-07-21 | 2011-04-13 | 天津晶岭微电子材料有限公司 | Preparation method of ceramic-glass polishing solution |
| CN102277088A (en) * | 2011-05-11 | 2011-12-14 | 上海双明光学科技有限公司 | Polishing solution for stainless carrier disc and usage thereof |
| CN104860541A (en) * | 2015-05-12 | 2015-08-26 | 中国船舶重工集团公司第七一七研究所 | Polishing solution and polishing method |
| CN105017970A (en) * | 2015-06-30 | 2015-11-04 | 安徽德诺化工有限公司 | Polishing liquid for sapphire substrate, and preparation method thereof |
| CN111777951A (en) * | 2020-08-11 | 2020-10-16 | 陕西国防工业职业技术学院 | Chemical mechanical polishing solution for microcrystalline glass |
| CN113956798A (en) * | 2021-10-21 | 2022-01-21 | 河南联合精密材料股份有限公司 | Polycrystalline cerium oxide polishing solution for polishing microcrystalline glass and preparation method and application thereof |
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