CN101693813B - Silicon-based fine polishing liquid - Google Patents
Silicon-based fine polishing liquid Download PDFInfo
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- CN101693813B CN101693813B CN 200910044260 CN200910044260A CN101693813B CN 101693813 B CN101693813 B CN 101693813B CN 200910044260 CN200910044260 CN 200910044260 CN 200910044260 A CN200910044260 A CN 200910044260A CN 101693813 B CN101693813 B CN 101693813B
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- based fine
- polishing liquid
- fine polishing
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Abstract
The invention discloses a silicon-based fine polishing liquid relating to the field of new material machining. The silicon-based fine polishing liquid is prepared by fixing high-purity monox sol, a pH regulator and a surfactant and sufficiently stirring, and has the characteristics of simple formula and manufacture process, higher stability and the like. The product of the invention can be used for grinding and polishing of lenses, flat glass, glass shells, spectacles, watch shells, display screens and the like, and is particularly suitable for chemically and mechanically polishing sapphire and polishing glass ceramics and silicon monocrystal substrates.
Description
Technical field
The present invention relates to the novel material manufacture field, particularly a kind ofly be suitable for the silicon-based fine polishing liquid that the sapphire chemically machinery polished is used.
Background technology
In order to improve sapphire chemically machinery polished (CMP) effect, scientific and technical personnel are studied its glossing: adopt SiO
2Abrasive material polishes the Sapphire Substrate sheet, and temperature, pH condition, abrasive size and concentration when having analyzed polishing, result show, adopt the SiO of the large particle diameter of 80nm, high density
2Abrasive material both can guarantee polishing speed, can obtain good condition of surface again; When pH value during at 10-12, can accelerate the chemical reaction rate of sapphire under alkaline condition, thereby improve polishing speed; In the time of 30 ℃, preferably equilibrium chemistry effect and mechanical effect obtain smooth-flat-surface; Add an amount of additive, but the volume of augmenting response product is easy to improve the effect of mechanical effect, to obtain higher removal speed.Therefore, when the preparation polishing fluid, mostly be added with the auxiliary agent of the multiple alkalescence such as ammoniacal liquor, hydrogen peroxide, BTA (EDTA) both at home and abroad, the adding of these multiple alkaline assistants can be brought foreign ion into, causes polishing fluid stable not.
Summary of the invention
For the deficiency that prior art exists, technical problem to be solved by this invention provide a kind of prescription and manufacture craft simple, and the polishing fluid with higher stability.
The technical solution used in the present invention is a kind of silicon-based fine polishing liquid of invention: be to form by fully stirring after the preparation of following raw materials according weight share, the mixing:
High-purity silicon oxide colloidal sol 95-98
PH conditioning agent 0.5-1.5
Tensio-active agent 0.5-1.
Wherein: the SiO in the high-purity silicon oxide colloidal sol
2Content is 30-40%, and particle diameter is 40-60nm.
Its prioritization scheme one: be to form by fully stirring after the preparation of following raw materials according weight share, the mixing:
High-purity silicon oxide colloidal sol 95
PH conditioning agent 0.5
Tensio-active agent 0.5.
Its prioritization scheme two: be to form by fully stirring after the preparation of following raw materials according weight share, the mixing:
High-purity silicon oxide colloidal sol 98
PH conditioning agent 1.5
Tensio-active agent 1.
Its prioritization scheme three: be to form by fully stirring after the preparation of following raw materials according weight share, the mixing:
High-purity silicon oxide colloidal sol 96
PH conditioning agent 1
Tensio-active agent 0.8.
Used high-purity silicon oxide colloidal sol is acidified processing.
Used pH adjusting agent can be a kind of of organic amine compound or quadrol or triethylamine or thanomin or trolamine or ammonium hydroxide or their combination.
Its pH value scope is between 9.0-10.0.
Used tensio-active agent can be a kind of of nonionogenic tenside or modified silicon oil or alkylamide or polyxyethylated class promoting agent or their combination.
Silicon-based fine polishing liquid of the present invention, because the auxiliary agent that adds only has pH adjusting agent and tensio-active agent, its prescription is relatively simple, and these auxiliary agents can play the several functions effect simultaneously, particularly selected pH adjusting agent can play the effect of oxidation, anti-decorations, complexing, pH regulator, thereby, greatly improved the stability of polishing fluid.Product after testing, can reach 2 years its stationary phase, substantially exceeds currently available products.
Embodiment
Embodiment one: be example by producing 96 gram silicon-based fine polishing liquids, take by weighing that particle diameter is even, the high-purity silicon oxide colloidal sol of the acidified processing 95 gram (SiO in the high-purity silicon oxide colloidal sol
2Content is 30-40%, particle diameter is 40-60nm), as modified silicon oil 0.5 gram of tensio-active agent, (this consumption guarantees that the pH value of the fine polishing liquid made is between 9.0-10.0 as quadrol 0.5 gram of pH adjusting agent, when the pH value is lower than this scope, can suitably increase consumption; When the pH value is higher than this scope, can suitably reduce consumption), stir after the mixing.
Embodiment two: be example by system 100.5 gram silicon-based fine polishing liquids, take by weighing that particle diameter is even, the high-purity silicon oxide colloidal sol of the acidified processing 98 gram (SiO in the high-purity silicon oxide colloidal sol
2Content is 30-40%, particle diameter is 40-60nm), modified silicon oil 0.5 gram and alkylamide 0.5 gram as tensio-active agent, quadrol 0.5 as pH adjusting agent restrains, (the pH value of the fine polishing liquid that the consumption assurance of this pH adjusting agent is made is between 9.0-10.0 for thanomin 1 gram, when the pH value is lower than this scope, can suitably increase consumption; When the pH value is higher than this scope, can suitably reduce consumption), stir after the mixing.
Embodiment three: be example by producing 97.8 gram silicon-based fine polishing liquids, take by weighing that particle diameter is even, the high-purity silicon oxide colloidal sol of the acidified processing 96 gram (SiO in the high-purity silicon oxide colloidal sol
2Content is 30-40%, particle diameter is 40-60nm), modified silicon oil 0.5 gram and alkylamide 0.5 gram as tensio-active agent, quadrol 0.4 as pH adjusting agent restrains, (the pH value of the fine polishing liquid that the consumption assurance of this pH adjusting agent is made is between 9.0-10.0 for thanomin 0.4 gram, when the pH value is lower than this scope, can suitably increase consumption; When the pH value is higher than this scope, can suitably reduce consumption), stir after the mixing.
Silicon-based fine polishing liquid of the present invention can be used for the grinding and polishing of lens, sheet glass, glass bulb, glasses, watchcase, display screen etc., is specially adapted to the polishing of sapphire chemically machinery polished and devitrified glass and silicon crystal substrate material polishing.
Claims (5)
1. silicon-based fine polishing liquid is characterized in that: be fully to stir by the preparation of following raw materials according weight share, after mixing to form:
High-purity silicon oxide colloidal sol 95-98
PH adjusting agent 0.5-1.5
Tensio-active agent 0.5-1;
Used pH adjusting agent is a kind of of quadrol or triethylamine or thanomin or trolamine or ammonium hydroxide in the organic amine compound or their combination;
Used tensio-active agent is a kind of of nonionogenic tenside or modified silicon oil or alkylamide or polyxyethylated class promoting agent or their combination;
Its pH value scope is between 9.0-10.0.
2. silicon-based fine polishing liquid according to claim 1 is characterized in that: be fully to stir by the preparation of following raw materials according weight share, after mixing to form:
High-purity silicon oxide colloidal sol 95
PH adjusting agent 0.5
Tensio-active agent 0.5.
3. silicon-based fine polishing liquid according to claim 1 is characterized in that: be fully to stir by the preparation of following raw materials according weight share, after mixing to form:
High-purity silicon oxide colloidal sol 98
PH adjusting agent 1.5
Tensio-active agent 1.
4. silicon-based fine polishing liquid according to claim 1 is characterized in that: be fully to stir by the preparation of following raw materials according weight share, after mixing to form:
High-purity silicon oxide colloidal sol 96
PH adjusting agent 1
Tensio-active agent 0.8.
5. each described silicon-based fine polishing liquid according to claim 1-4, it is characterized in that: used high-purity silicon oxide colloidal sol is acidified processing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910044260 CN101693813B (en) | 2009-09-01 | 2009-09-01 | Silicon-based fine polishing liquid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910044260 CN101693813B (en) | 2009-09-01 | 2009-09-01 | Silicon-based fine polishing liquid |
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| Publication Number | Publication Date |
|---|---|
| CN101693813A CN101693813A (en) | 2010-04-14 |
| CN101693813B true CN101693813B (en) | 2013-04-10 |
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| CN 200910044260 Active CN101693813B (en) | 2009-09-01 | 2009-09-01 | Silicon-based fine polishing liquid |
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102277088A (en) * | 2011-05-11 | 2011-12-14 | 上海双明光学科技有限公司 | Polishing solution for stainless carrier disc and usage thereof |
| CN102241946A (en) * | 2011-05-15 | 2011-11-16 | 刘薇娜 | Microporous grain flow polishing liquid and preparation method thereof |
| CN104046245B (en) * | 2014-06-11 | 2016-03-09 | 泰安麦丰新材料科技有限公司 | A kind of manufacture method of sial composite polishing liquid |
| CN104073170B (en) * | 2014-06-24 | 2015-11-18 | 江苏天恒纳米科技股份有限公司 | A kind of aluminum alloy surface Ultra-precision Turning special-purpose nanometer slurry and preparation method thereof |
| CN105141812B (en) * | 2015-06-18 | 2022-02-11 | 重庆新知创科技有限公司 | Production method of sapphire camera window sheet |
| CN105141813B (en) * | 2015-06-18 | 2021-09-21 | 江苏苏创光学器材有限公司 | Preparation method of sapphire camera window sheet |
| CN105154968A (en) * | 2015-06-18 | 2015-12-16 | 江苏苏创光学器材有限公司 | Preparation method for sapphire LED filament substrate |
| CN114940866B (en) * | 2022-06-29 | 2023-09-19 | 万华化学集团电子材料有限公司 | Chemical mechanical polishing liquid for silicon wafer, preparation method and application thereof |
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| CN1155514A (en) * | 1996-01-25 | 1997-07-30 | 天津市化学试剂一厂 | Manufacture of high purity, high concentration and high granularity large granular silicon dioxide gel |
| CN1434846A (en) * | 2000-05-12 | 2003-08-06 | 日产化学工业株式会社 | Polishing composition |
| CN1858132A (en) * | 2006-05-31 | 2006-11-08 | 河北工业大学 | Polishing liquid for grinding and polishing micro crystal glass |
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| CN101092541A (en) * | 2006-06-23 | 2007-12-26 | 天津晶岭电子材料科技有限公司 | Finishing polish liquid in use for silicon wafer |
| CN101096571A (en) * | 2006-06-30 | 2008-01-02 | 天津晶岭电子材料科技有限公司 | Polishing liquid for glass material and preparation method thereof |
| CN101249625A (en) * | 2008-03-21 | 2008-08-27 | 中国科学院上海光学精密机械研究所 | Laser glass mechanical chemical polishing method |
| CN101475180A (en) * | 2009-01-16 | 2009-07-08 | 清华大学 | Purification method of ultra-pure silicon dioxide sol |
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2009
- 2009-09-01 CN CN 200910044260 patent/CN101693813B/en active Active
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|---|---|---|---|---|
| CN1155514A (en) * | 1996-01-25 | 1997-07-30 | 天津市化学试剂一厂 | Manufacture of high purity, high concentration and high granularity large granular silicon dioxide gel |
| CN1434846A (en) * | 2000-05-12 | 2003-08-06 | 日产化学工业株式会社 | Polishing composition |
| CN1858132A (en) * | 2006-05-31 | 2006-11-08 | 河北工业大学 | Polishing liquid for grinding and polishing micro crystal glass |
| CN101092541A (en) * | 2006-06-23 | 2007-12-26 | 天津晶岭电子材料科技有限公司 | Finishing polish liquid in use for silicon wafer |
| CN101096571A (en) * | 2006-06-30 | 2008-01-02 | 天津晶岭电子材料科技有限公司 | Polishing liquid for glass material and preparation method thereof |
| CN101050338A (en) * | 2007-05-11 | 2007-10-10 | 江苏海迅实业有限公司 | Polishing fluid of Nano silicon dioxide grinding material in use for processing microcrystalline glass, and preparation method |
| CN101249625A (en) * | 2008-03-21 | 2008-08-27 | 中国科学院上海光学精密机械研究所 | Laser glass mechanical chemical polishing method |
| CN101475180A (en) * | 2009-01-16 | 2009-07-08 | 清华大学 | Purification method of ultra-pure silicon dioxide sol |
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| CN101693813A (en) | 2010-04-14 |
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Address after: Whitewater Jianye road 426141 Yongzhou city of Hunan province Qiyang County No. 7 Applicant after: Hunan Haozhi New Materials Co., Ltd. Address before: Whitewater 426141 Hunan County in Qiyang province Yan Chong Cun (Qiyang science and Technology Industrial Park) Applicant before: Yongzhou Haozhi RareEarth Co.,Ltd. |
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