CN103740281B - A kind ofly be applicable to polishing composition of large size silicon wafer polishing and preparation method thereof - Google Patents
A kind ofly be applicable to polishing composition of large size silicon wafer polishing and preparation method thereof Download PDFInfo
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- 238000005498 polishing Methods 0.000 title claims abstract description 73
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 51
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 51
- 239000010703 silicon Substances 0.000 title claims abstract description 51
- 239000000203 mixture Substances 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 16
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims abstract description 13
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 12
- 239000002250 absorbent Substances 0.000 claims abstract description 11
- 230000002745 absorbent Effects 0.000 claims abstract description 11
- 239000002253 acid Substances 0.000 claims abstract description 10
- 239000008187 granular material Substances 0.000 claims abstract description 10
- 239000013543 active substance Substances 0.000 claims abstract description 9
- 239000002245 particle Substances 0.000 claims description 16
- 230000002378 acidificating effect Effects 0.000 claims description 13
- -1 poly(propylene oxide) Polymers 0.000 claims description 13
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 12
- 229960001866 silicon dioxide Drugs 0.000 claims description 11
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical group [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims description 9
- 239000003513 alkali Substances 0.000 claims description 9
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 8
- 239000011707 mineral Substances 0.000 claims description 8
- 150000007530 organic bases Chemical class 0.000 claims description 8
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 claims description 6
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 claims description 6
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims description 6
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 6
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 6
- JFCQEDHGNNZCLN-UHFFFAOYSA-N glutaric acid Chemical compound OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 claims description 6
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 claims description 6
- 229920002401 polyacrylamide Polymers 0.000 claims description 6
- 229920001451 polypropylene glycol Polymers 0.000 claims description 6
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 6
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 6
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 6
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 6
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 claims description 6
- RNMDNPCBIKJCQP-UHFFFAOYSA-N 5-nonyl-7-oxabicyclo[4.1.0]hepta-1,3,5-trien-2-ol Chemical compound C(CCCCCCCC)C1=C2C(=C(C=C1)O)O2 RNMDNPCBIKJCQP-UHFFFAOYSA-N 0.000 claims description 5
- 229960001124 trientine Drugs 0.000 claims description 5
- 150000008044 alkali metal hydroxides Chemical class 0.000 claims description 4
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 3
- MXZROAOUCUVNHX-UHFFFAOYSA-N 2-Aminopropanol Chemical compound CCC(N)O MXZROAOUCUVNHX-UHFFFAOYSA-N 0.000 claims description 3
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 3
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 3
- KGWDUNBJIMUFAP-KVVVOXFISA-N Ethanolamine Oleate Chemical compound NCCO.CCCCCCCC\C=C/CCCCCCCC(O)=O KGWDUNBJIMUFAP-KVVVOXFISA-N 0.000 claims description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 3
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 claims description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 3
- 229920002125 Sokalan® Polymers 0.000 claims description 3
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 3
- 125000003368 amide group Chemical group 0.000 claims description 3
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 150000003863 ammonium salts Chemical class 0.000 claims description 3
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 3
- 229920001577 copolymer Polymers 0.000 claims description 3
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 3
- UZBQIPPOMKBLAS-UHFFFAOYSA-N diethylazanide Chemical compound CC[N-]CC UZBQIPPOMKBLAS-UHFFFAOYSA-N 0.000 claims description 3
- HCPOCMMGKBZWSJ-UHFFFAOYSA-N ethyl 3-hydrazinyl-3-oxopropanoate Chemical compound CCOC(=O)CC(=O)NN HCPOCMMGKBZWSJ-UHFFFAOYSA-N 0.000 claims description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 3
- YPJKMVATUPSWOH-UHFFFAOYSA-N nitrooxidanyl Chemical compound [O][N+]([O-])=O YPJKMVATUPSWOH-UHFFFAOYSA-N 0.000 claims description 3
- 229920000620 organic polymer Polymers 0.000 claims description 3
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 3
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 3
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 claims description 3
- 229910052700 potassium Inorganic materials 0.000 claims description 3
- 239000011591 potassium Substances 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 239000011734 sodium Substances 0.000 claims description 3
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical compound CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 claims description 3
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 13
- 238000007517 polishing process Methods 0.000 abstract description 9
- 239000000126 substance Substances 0.000 abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- 239000008367 deionised water Substances 0.000 abstract 1
- 229910021641 deionized water Inorganic materials 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 27
- 239000012530 fluid Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 7
- 238000003756 stirring Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000011161 development Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000009775 high-speed stirring Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 101100203596 Caenorhabditis elegans sol-1 gene Proteins 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- NSOXQYCFHDMMGV-UHFFFAOYSA-N Tetrakis(2-hydroxypropyl)ethylenediamine Chemical compound CC(O)CN(CC(C)O)CCN(CC(C)O)CC(C)O NSOXQYCFHDMMGV-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000007521 mechanical polishing technique Methods 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000003352 sequestering agent Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The present invention relates to and be a kind ofly applicable to polishing composition of large size silicon wafer polishing and preparation method thereof, belong to chemically machinery polished (CMP) field.Said composition comprises following component: acid silicon dioxide sol, silica sol granule stablizer, heat absorbent, basic cpd, tensio-active agent, deionized water surplus; Described large size silicon wafer diameter is 200mm ~ 300mm.The present composition is by stable mechanical effect and chemical action in composition, avoid temperature control phenomenon in polishing process especially, realize the uniform polish of large size silicon wafer, make that the polishing speed of large size silicon wafer is fast, surface finish is high, surface quality is good.
Description
Technical field
The present invention relates to chemically machinery polished (CMP) field, particularly a kind of polishing composition for more than 200mm silicon wafer polishing.
Background technology
Semiconductor industry is the core of modern electronics industry, and the basis of semiconductor industry is silicon materials industry.Although have various novel semiconductor material constantly to occur, the semiconducter device of more than 90% and circuit, especially super large-scale integration (ULSI) is all be produced on the silicon single-crystal polishing plate of high-purity high-quality and epitaxial wafer.At present, super large-scale integration manufacturing technology has developed into characteristic line breadth less than 0.1 μm, the 300mm epoch.
Chemical Mechanical Polishing Technique is as the Technology that can be provided in global planarization on whole round silicon wafer unique at present, be widely applied to semiconductor integrated circuit field, silicon polished industry development has good prospect at home, present 12 inches of large diameter silicon monocrystal substrate slices have become the mainstream technology that IC manufactures, the 300mmFAB foundries that only inland of China is being built or planned to build has 8 lines, it is very large to the demand of polishing fluid, the unit manufacturing cost of large-sized silicon wafers increases, the height of its yield plays a key effect to cost, so the exception of the stable change of the optimization of technique and polishing fluid performance is crucial.From improving China's silicon industrial chain, promote silicon level of industrial technology, the angle of Development Technology innovative product is considered, studies in China develop the silicon polished technology of 12 inches of levels and industry very necessary.
Along with the further microminiaturization of characteristic line breadth, have higher requirement to the degree of planarization of silicon chip surface, 200mm silicon chip just can meet application requiring by silicon chip twin grinding and glossing.But to 300mm silicon chip, to the front of silicon chip not only exigent overall planeness precision in application, and require higher local planeness.Traditional CMP to base silicon material is single-sided polishing, but along with the development of super large-scale integration, single-sided polishing can not meet the requirement of less live width, therefore to for live width be less than 0.13 μm technique 300mm silicon chip processing in need to carry out double side chemical mechanical polishing, this be also large-diameter silicon wafer processing development trend.Such as, meet the silicon chip of 65nm manufacture process requirement, front side of silicon wafer requires that overall planeness (GBIR) is less than 1 micron, and local planeness (SFQR) is less than 0.07 micron.
Polish temperature is the important parameter affecting silicon wafer polishing speed and quality.Along with the increase of polish temperature, the chemical reaction ability of polishing fluid will the corresponding increase of exponent function relation, also can cause the quick volatilization of polishing fluid simultaneously, will cause silicon chip surface seriously corroded like this, remove uneven, thus quality of finish be declined.But the too low chemical reaction velocity that can make again of polish temperature reduces, and then makes mechanical effect be greater than chemical action, and silicon chip physical abuse is serious.
Polish pressure and polishing rotating speed to polishing velocity and glazed surface quality influence very large, usually along with the increase of polish pressure and polishing rotating speed, mechanical effect will strengthen, and polishing velocity also will increase.But using too high polish pressure and rotating speed to cause, silicon wafer polishing speed is uneven, polish temperature raises and wayward, thus make to occur that the probability scratched increases greatly, quality of finish declines.
US2008/0127573 discloses a kind of for the precise polished formula of Silicon Wafer, comprising pH value regulator, water-soluble thickener, tensio-active agent, the additives such as heterocyclic amine, significantly can be reduced the scattering imperfection of silicon chip surface local light by modifying ingredients proportioning and abrasive size, be reduced the microscopic asperity of mist defect and silicon chip surface greatly.But there is no the surface quality after the effect in polishing process of the concentration of each composition in clear and definite polishing fluid, each composition and polishing clearance and polishing.
The people such as Sasaki disclose a kind of silicon wafer polishing composition (patent EP0371147B1, JP09324174) containing silane coupler modified silicon sol; The clear rich people such as grade of He Seto discloses a kind of silicon wafer polishing composition (patent WO2004042812) adding sequestrant; The silicon-dioxide of cerium dioxide coating and aluminum oxide coating layer is have employed in patent US5876490 and US3922393; Patent US4664679 have employed the method for modifying reducing colloid silica surface silanol groups.These process all achieve certain effect to defects controlling, but for the monocrystalline silicon buffing liquid of requirements at the higher level of new generation, above method also exists certain limitation.
Summary of the invention
The present invention is directed to the existing deficiency existed in the art, propose a kind ofly to be applicable to polishing composition of large size silicon wafer polishing and preparation method thereof, overcome traditional silicon wafer polishing fluid in polishing process because polish temperature raises and the wayward and parameter indexs such as surface imperfection that is that cause is many, polishing velocity is uneven, overall planeness and local planeness are not high difficult problem.
A kind of composition being applicable to large size silicon wafer polishing of the present invention, is characterized in that, its component and proportioning are:
Described large size silicon wafer diameter is 200mm ~ 300mm.
The silicon-dioxide median size of described acid silicon dioxide sol is 5nm ~ 500nm, and its particle specific surface area is 50m2/g ~ 400m2/g; The pH of acidic silicasol is less than 6.
Described silica sol granule stablizer is the organic polymer containing hydroxyl, ether, carboxyl and amide group, is one or more in polyethylene oxide (PEO), poly(propylene oxide) (PPO), polyvinyl alcohol (PVA), polyacrylic acid (PAA), polyacrylamide (PAM).
Described heat absorbent is the salt of labile acidic cpd, acidic cpd.
Described acidic cpd has oxalic acid, propanedioic acid, succinic acid, pentanedioic acid, hexanodioic acid and containing one or more in carbonate, bicarbonate radical, inferior sulfate radical, bisulfite, the potassium of nitrate radical, sodium, ammonium salt.
Described basic cpd comprises mineral alkali, organic bases.
Described mineral alkali is alkali metal hydroxide, one or more in potassium hydroxide or sodium hydroxide; Organic bases be one in ammonia, methylamine, dimethyl amine, Trimethylamine, ethylamine, diethylamide, triethylamine, α-amino isopropyl alcohol, aminopropanol, tetraethyl-amine, thanomin, diethyl triamine, trientine, hydroxyethylethylene diamine, hexamethylene-diamine, diethylenetriamine, Triethylenetetramine (TETA), Piperazine anhydrous, Uricida or several in; Described mineral alkali and organic bases are used alone or as a mixture.
Described tensio-active agent is nonionogenic tenside.
Described nonionogenic tenside is one or more in fatty alcohol-polyoxyethylene ether (AEO), polyoxyethylene nonylphenol ether (NP-10), polyoxyethylene octylphenol ether (OP-10), polyoxyethylene polyoxypropylene segmented copolymer (EO-PO), polyvinylpyrrolidone (PVP).
A kind of preparation method for large size silicon wafer polishing composition of the present invention, is characterized in that, comprise the following steps:
To be scattered in water and the acid silicon dioxide sol of high-speed stirring and silica sol granule stablizer mix and blend 5 ~ 30 minutes;
Add heat absorbent wherein to stir 5 ~ 30 minutes, preparation temperature controls within 5 ~ 40 degree;
Add basic cpd again to stir 5 ~ 30 minutes, preparation temperature controls within 5 ~ 40 degree;
Add tensio-active agent to stir, after mixing, obtain polishing composition of the present invention.
The present composition is by stable mechanical effect and chemical action in composition, avoid temperature control phenomenon in polishing process especially, realize the uniform polish of large size silicon wafer, make that the polishing speed of large size silicon wafer is fast, surface finish is high, surface quality is good.
Accompanying drawing explanation
Fig. 1 be polishing composition components do match of the present invention more excellent time (embodiment 3) polishing before and after polishing fluid laser particle size measurement figure.
Fig. 2 be polishing composition components do match of the present invention good time (embodiment 4) polishing before and after polishing fluid laser particle size measurement figure.
Fig. 3 be use general silica colloidal sol 1 in polishing composition of the present invention, polishing fluid laser particle size measurement figure before and after (comparative example 2) polishing when not adding heat absorbent.
Fig. 4 be use general silica colloidal sol 2 in polishing composition of the present invention, polishing fluid laser particle size measurement figure before and after (comparative example 3) polishing when not adding heat absorbent.
Embodiment
Below by embodiment and comparative example, the invention will be further elaborated, certainly in no case should be construed as limiting the scope of the invention.
Each component of concrete interpolation and edge polishing result are as in the attached table.Test with these edge polishing compositions, to 12 inch silicon wafer P<100> type wafers as polishing object.
In embodiment, edge polishing technique is as follows:
Polishing machine: 20B-5P-4D(SpeedfamCo., Ltd. manufacture)
Pressure: 10Mpa
Rotating speed: 30rpm
Polishing pad: SUBA800(Rodel, Inc.U.S.A manufacture)
Polishing fluid flow: 4L/ minute
Polishing time: 30 minutes
After polishing, wafer, through cleaning, drying, detects silicon chip surface with ADEAFS3220 surface geometry parameter detecting instrument, silicon wafer GBIR, SFQR parameter and variation in thickness after test polishing.Polish removal rate is changed into according to the silicon wafer thickness change before and after throwing.
The each component of the present invention and effect are described in detail as follows:
Acid silicon dioxide sol
In the component of edge polishing composition of the present invention, abrasive material is silicon-dioxide, and concrete what adopt be its particle specific surface area of median size 5nm ~ 500nm is 50m2/g ~ 400m2/g; The acidic silicasol that pH is less than 6.Silicon-dioxide carries out polishing as abrasive particle by mechanical effect effects on surface, the mean particle size of silicon-dioxide refer to light scattering method survey the mean particle size that data obtain, specific surface area refers to the specific surface area of determination of adsorption method.
Selected silicon sol is little because specific grain surface amasss, particle compactedness is high, in polishing process, be not subject to affected by high and broken, the mechanical effect in polishing process can be made to keep stable, the scuffing simultaneously the out-of-shape particle caused due to grain breakage can being avoided to cause.
Silica sol granule stablizer
In polishing large size silicon wafer process; for improving the stability of polishing particles further; when using this acidic silicasol; also add silica sol granule stablizer wherein, silica sol granule stablizer is formed with silica sphere in acid condition and adsorbs, and forms one deck particle protective layer; polishing particles is made not only to be not easy fragmentation; and be not easy to reunite, can keep the stability of polishing particles, the mechanical effect further ensured when polishing large size silicon wafer is stablized.
Described silica sol granule stablizer is the organic polymer containing hydroxyl, ether, carboxyl and amide group, is one or more in polyethylene oxide (PEO), poly(propylene oxide) (PPO), polyvinyl alcohol (PVA), polyacrylic acid (PAA), polyacrylamide (PAM).
Heat absorbent
In the present invention, heat absorbent can take away the waste heat of the generation in polishing process, polish temperature is made to keep stable, make chemical action in polishing keep stable, avoid the silicon chip surface seriously corroded because temperature control causes, remove non-uniform phenomenon, planeness after raising polishing.
Described heat absorbent is the salt of labile acidic cpd and acidic cpd, and specifically can be contained in acidic cpd of the present invention has oxalic acid, propanedioic acid, succinic acid, pentanedioic acid, hexanodioic acid and contain carbonate, bicarbonate radical, inferior sulfate radical, bisulfite, the potassium of nitrate radical, sodium, ammonium salt.In the present invention, heat absorbent can be the mixture of above-claimed cpd.
Basic cpd
Basic cpd is the main corrosion agent ensureing silicon wafer polishing speed, and its contamination will affect the chemical reaction ability of polishing fluid, and the temperature simultaneously affected in polishing process controls.
In the present invention, basic cpd comprises mineral alkali and organic bases.Mineral alkali is alkali metal hydroxide, potassium hydroxide or sodium hydroxide.Organic bases is ammonia, methylamine, dimethyl amine, Trimethylamine, tetramethyl-ammonium, ethylamine, diethylamide, triethylamine, α-amino isopropyl alcohol, aminopropanol, tetraethyl-amine, quadrol, thanomin, diethyl triamine, trientine, hydroxyethylethylene diamine, hexamethylene-diamine, Piperazine anhydrous, Uricida, and neutral and alkali compound of the present invention can be the mixture of above-mentioned basic cpd.
Tensio-active agent
Described tensio-active agent is nonionogenic tenside.Nonionogenic tenside is one or more in fatty alcohol-polyoxyethylene ether (AEO), polyoxyethylene nonylphenol ether (NP-10), polyoxyethylene octylphenol ether (OP-10), polyoxyethylene polyoxypropylene segmented copolymer (EO-PO), polyvinylpyrrolidone (PVP).
Tensio-active agent can improve granule stability in the present compositions further, plays effect that is wetting and prevention granular absorption further in polishing process.
Polishing composition preparation method of the present invention, comprises the following steps:
To be scattered in water and the acid silicon dioxide sol of high-speed stirring mixes with silica sol granule stablizer, can stir and within 5 ~ 30 minutes, to play a role to component and make stable system, pH controls below 6;
Add heat absorbent wherein, can stir and within 5 ~ 30 minutes, to play a role to component and make stable system, pH controls below 5, and preparation temperature controls within 5 ~ 40 degree;
Add basic cpd again, can stir and within 5 ~ 30 minutes, to play a role to component and make stable system, pH controls at 10-12, and preparation temperature controls within 5 ~ 40 degree;
Add tensio-active agent, after being uniformly mixed, obtain polishing composition of the present invention.
The each component of subordinate list and edge polishing result
In addition, those skilled in the art can also do other changes in spirit of the present invention, and these changes done according to the present invention's spirit all should be included in the present invention's scope required for protection.
Claims (8)
1. be applicable to a composition for large size silicon wafer polishing, it is characterized in that, its component and proportioning are:
Described large size silicon wafer diameter is 200mm-300mm; The silicon-dioxide median size of described acid silicon dioxide sol is 5nm ~ 500nm, and its particle specific surface area is 50m
2/ g ~ 400m
2/ g; The pH of acidic silicasol is less than 6.
2. composition according to claim 1, it is characterized in that, described silica sol granule stablizer is the organic polymer containing hydroxyl, ether, carboxyl and amide group, is one or more in polyethylene oxide (PEO), poly(propylene oxide) (PPO), polyvinyl alcohol (PVA), polyacrylic acid (PAA), polyacrylamide (PAM).
3. composition according to claim 1, is characterized in that, described heat absorbent is the salt of labile acidic cpd, acidic cpd.
4. composition according to claim 3, it is characterized in that, described acidic cpd has oxalic acid, propanedioic acid, succinic acid, pentanedioic acid, hexanodioic acid and containing one or more in carbonate, bicarbonate radical, inferior sulfate radical, bisulfite, the potassium of nitrate radical, sodium, ammonium salt.
5. composition according to claim 1, is characterized in that, described basic cpd comprises mineral alkali, organic bases.
6. composition according to claim 5, is characterized in that, described mineral alkali is alkali metal hydroxide, and alkali metal hydroxide is potassium hydroxide and/or sodium hydroxide; Organic bases be one in ammonia, methylamine, dimethyl amine, Trimethylamine, ethylamine, diethylamide, triethylamine, α-amino isopropyl alcohol, aminopropanol, tetraethyl-amine, thanomin, diethyl triamine, trientine, hydroxyethylethylene diamine, hexamethylene-diamine, diethylenetriamine, Triethylenetetramine (TETA), Piperazine anhydrous, Uricida or several in; Described mineral alkali and organic bases are used alone or as a mixture.
7. composition according to claim 1, is characterized in that, described tensio-active agent is nonionogenic tenside.
8. composition according to claim 7, it is characterized in that, described nonionogenic tenside is one or more in fatty alcohol-polyoxyethylene ether (AEO), polyoxyethylene nonylphenol ether (NP ?10), polyoxyethylene octylphenol ether (OP ?10), polyoxyethylene polyoxypropylene segmented copolymer (EO ?PO), polyvinylpyrrolidone (PVP).
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| CN104530987B (en) * | 2014-12-10 | 2017-04-05 | 深圳市力合材料有限公司 | A kind of silicon wafer finishing polish compositionss and preparation method |
| CN104827592A (en) * | 2015-04-22 | 2015-08-12 | 苏州爱彼光电材料有限公司 | Processing method of large-sized sapphire substrate slice |
| CN109111857B (en) * | 2018-09-06 | 2020-10-16 | 北京保利世达科技有限公司 | Polishing solution and application thereof to polishing of 2.5D zirconia ceramic plate |
| CN111378972B (en) * | 2018-12-29 | 2024-09-13 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
| KR102358134B1 (en) * | 2021-07-08 | 2022-02-08 | 영창케미칼 주식회사 | Slurry composition for final polishing a silicone wafer for reducing the number of surface defects and haze and final polishing method using the same |
| WO2023181929A1 (en) * | 2022-03-23 | 2023-09-28 | 株式会社フジミインコーポレーテッド | Polishing composition |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1238365A (en) * | 1998-06-05 | 1999-12-15 | 不二见株式会社 | Edge polishing composition |
| CN1537038A (en) * | 2001-12-26 | 2004-10-13 | ��ķ�о�����˾ | Apparatus and method for controlling wafer temp. in chemical mechanical polishing |
| CN101094749A (en) * | 2004-11-05 | 2007-12-26 | 3M创新有限公司 | Abrasive material comprising reactive inorganic endothermic compound |
| CN101451046A (en) * | 2008-12-30 | 2009-06-10 | 清华大学 | Polishing composite for silicon wafer polishing |
| CN101781766A (en) * | 2009-01-20 | 2010-07-21 | 昆山市百益电子科技材料有限公司 | Tungsten polishing solution |
| CN102031064A (en) * | 2010-12-07 | 2011-04-27 | 江苏海迅实业集团股份有限公司 | Silicon wafer chemical machinery polishing solution with special buffer system |
| CN102093819A (en) * | 2011-01-06 | 2011-06-15 | 清华大学 | Polishing composition for fine polishing of silicon wafer |
| CN102391787A (en) * | 2011-08-10 | 2012-03-28 | 上海新安纳电子科技有限公司 | Polishing solution used for polishing silicon single crystal sheet as well as preparation and application thereof |
| CN102408837A (en) * | 2011-11-22 | 2012-04-11 | 清华大学 | Polishing composition capable of improving silicon wafer polishing accuracy and preparation method thereof |
| CN102516876A (en) * | 2011-11-22 | 2012-06-27 | 清华大学 | Polishing composition for silicon wafer polishing and preparation method thereof |
| CN102672594A (en) * | 2012-05-04 | 2012-09-19 | 上海华力微电子有限公司 | Device for precisely controlling temperature of CMP (Chemical Mechanical Polishing) grinding disc |
| CN202462200U (en) * | 2012-03-05 | 2012-10-03 | 中芯国际集成电路制造(上海)有限公司 | Grinding temperature control system and grinding device |
| CN102766408A (en) * | 2012-06-28 | 2012-11-07 | 深圳市力合材料有限公司 | Silicon wafer refined polishing composition liquid applicable to low pressure and preparation method thereof |
| CN103328599A (en) * | 2011-01-21 | 2013-09-25 | 嘉柏微电子材料股份公司 | Silicon polishing compositions with improved PSD performance |
-
2013
- 2013-12-31 CN CN201310753521.XA patent/CN103740281B/en not_active Expired - Fee Related
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1238365A (en) * | 1998-06-05 | 1999-12-15 | 不二见株式会社 | Edge polishing composition |
| CN1537038A (en) * | 2001-12-26 | 2004-10-13 | ��ķ�о�����˾ | Apparatus and method for controlling wafer temp. in chemical mechanical polishing |
| CN101094749A (en) * | 2004-11-05 | 2007-12-26 | 3M创新有限公司 | Abrasive material comprising reactive inorganic endothermic compound |
| CN101451046A (en) * | 2008-12-30 | 2009-06-10 | 清华大学 | Polishing composite for silicon wafer polishing |
| CN101781766A (en) * | 2009-01-20 | 2010-07-21 | 昆山市百益电子科技材料有限公司 | Tungsten polishing solution |
| CN102031064A (en) * | 2010-12-07 | 2011-04-27 | 江苏海迅实业集团股份有限公司 | Silicon wafer chemical machinery polishing solution with special buffer system |
| CN102093819A (en) * | 2011-01-06 | 2011-06-15 | 清华大学 | Polishing composition for fine polishing of silicon wafer |
| CN103328599A (en) * | 2011-01-21 | 2013-09-25 | 嘉柏微电子材料股份公司 | Silicon polishing compositions with improved PSD performance |
| CN102391787A (en) * | 2011-08-10 | 2012-03-28 | 上海新安纳电子科技有限公司 | Polishing solution used for polishing silicon single crystal sheet as well as preparation and application thereof |
| CN102408837A (en) * | 2011-11-22 | 2012-04-11 | 清华大学 | Polishing composition capable of improving silicon wafer polishing accuracy and preparation method thereof |
| CN102516876A (en) * | 2011-11-22 | 2012-06-27 | 清华大学 | Polishing composition for silicon wafer polishing and preparation method thereof |
| CN202462200U (en) * | 2012-03-05 | 2012-10-03 | 中芯国际集成电路制造(上海)有限公司 | Grinding temperature control system and grinding device |
| CN102672594A (en) * | 2012-05-04 | 2012-09-19 | 上海华力微电子有限公司 | Device for precisely controlling temperature of CMP (Chemical Mechanical Polishing) grinding disc |
| CN102766408A (en) * | 2012-06-28 | 2012-11-07 | 深圳市力合材料有限公司 | Silicon wafer refined polishing composition liquid applicable to low pressure and preparation method thereof |
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