CN101096573A - Polishing liquid for silica dioxide medium and preparation method thereof - Google Patents
Polishing liquid for silica dioxide medium and preparation method thereof Download PDFInfo
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- CN101096573A CN101096573A CNA2006100145970A CN200610014597A CN101096573A CN 101096573 A CN101096573 A CN 101096573A CN A2006100145970 A CNA2006100145970 A CN A2006100145970A CN 200610014597 A CN200610014597 A CN 200610014597A CN 101096573 A CN101096573 A CN 101096573A
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- polishing fluid
- silica dioxide
- dioxide medium
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Abstract
The invention discloses a polishing liquid for silica dioxide medium, which comprises the following parts: 10-50% abradant, 0.01-0.6% soxidant, 1-6% pH adjusting agent, 0.01%-15% chelant and 28.4-88.98% deionized water, wherein pH value range of polishing liquid is 11-12, and the grain diameter is 15nm-100nm. The preparing method comprises the following steps: taking the material; filtering; purifying; mixing homogeneously. The invention doesn't corrode and pollute the device, which has the simple technology and the low cost.
Description
(1) technical field:
The present invention relates to a kind of polishing fluid and preparation method thereof, particularly a kind of polishing fluid that is used for the large-scale integrated circuit silica dioxide medium and preparation method thereof.
(2) background technology:
Silica dioxide medium is widely used a kind of dielectric material in the semiconductor integrated circuit, the shape on silica dioxide medium surface is determining the success or failure of next step processing of unicircuit, because the hardness of silica dioxide medium own is big, so brought great difficulty for the material surface planarization process.Mainly adopt acid polishing slurry to polish processing at present in the world, more serious to the damage ratio of equipment, working accuracy is poor.
(3) summary of the invention:
The object of the present invention is to provide a kind of polishing fluid that is used for silica dioxide medium and preparation method thereof, it can overcome cleaning shortcoming of the prior art, plays the effect of efficient cleaning, and to not infringement of equipment.
Technical scheme of the present invention: a kind of polishing fluid that is used for silica dioxide medium, it is characterized in that it is mixed by abrasive material, tensio-active agent, pH value conditioning agent, oxygenant and deionized water forms, wherein abrasive material accounts for 10～50% of gross weight, 0.01～0.6% of surfactant comprise gross weight, the pH value conditioning agent accounts for 1～6% of gross weight, oxygenant accounts for 0.01～15% of gross weight, deionized water accounts for 28.4～88.98% of gross weight, polishing fluid pH value scope is 11～12, and particle diameter is 15nm～100nm.
Above-mentioned said a kind of integral part that is used for the polishing fluid of silica dioxide medium, said abrasive material are meant that particle size range is the water-soluble silicon sol of 15nm～100nm or the water-sol of metal oxide.
The water-sol of above-mentioned said metal oxide is SiO
2, Al
2O
3, CeO
2Or TiO
2The water-sol.
Above-mentioned said a kind of integral part that is used for the polishing fluid of silica dioxide medium, said tensio-active agent is is nonionic surface active agent.
Above-mentioned said nonionic surface active agent is aliphatic alcohol polyoxyethylene or alkylol amide.
Above-mentioned said a kind of integral part that is used for the polishing fluid of silica dioxide medium, said PH conditioning agent is one or more combinations in sodium hydroxide, potassium hydroxide, many hydroxyls polyamines, the amine.
Above-mentioned said a kind of integral part that is used for the polishing fluid of silica dioxide medium, said oxygenant is one or more combinations in hydrogen peroxide, iron nitrate, aluminum nitrate, the persulphate.
A kind of polishing fluid preparation method who is used for silica dioxide medium, it is characterized in that at first will preparing the required abrasive material of polishing fluid, tensio-active agent, pH value conditioning agent, oxygenant and deionized water and get material by formula rate, and carry out filtration, purification respectively and handle, then in the environment of thousand grades of decontamination chambers, with various components under the power of negative pressure of vacuum, get final product by stirring in the mass flowmeter input pod jar and fully, mixing.
Superiority of the present invention is: (1) polishing fluid is an alkalescence, does not corrode contaminated equipment, cleans easily; (2) the silica dioxide medium polishing speed is fast, and planarization is good; (3) adopt nonionic surface active agent, can produce the effect of taking off of effectively inhaling from substrate surface abrasive material and reaction product; (4) technology is simple, and cost is low.
(4) embodiment:
Embodiment 1: a kind of polishing fluid is characterized in that it is mixed by abrasive material, tensio-active agent, pH value conditioning agent, oxygenant and deionized water to form.
The concrete experimental program of the above-mentioned said polishing fluid that is used for silica dioxide medium is as follows:
Dispose the 200g polishing fluid, need get and account for gross weight is 20% CeO
2Abrasive material 40g, particle diameter 100-120nm accounts for gross weight and is 0.5% aliphatic alcohol polyoxyethylene 1g, accounts for gross weight and be 2% hydrogen peroxide 4g, accounts for gross weight and be 2% potassium hydroxide 4g, accounts for gross weight and be 75.5% deionized water.
The preparation method of polishing fluid is: the CeO that at first will prepare polishing fluid
2, aliphatic alcohol polyoxyethylene, hydrogen peroxide, potassium hydroxide and deionized water get material by above-mentioned formula rate, and carry out filtration, purification respectively and handle, then in the environment of thousand grades of decontamination chambers, with various components under the power of negative pressure of vacuum, get final product by stirring in the mass flowmeter input pod jar and fully, mixing.
Laboratory test results: above-mentioned polishing fluid pH value is 11.2, and size distribution is 100-120nm.On wind and thunder C6382I/YJ type polishing machine, is 100g/cm at pressure with the polishing fluid for preparing
2, the polishing disk rotating speed is under the condition of 80 rev/mins, flow 900ml/ minute, and the silicon-dioxide silicon chip is polished, the mean rate that records silica dioxide medium is 0.11 micron/minute, surface quality is good.
Embodiment 2: a kind of polishing fluid is characterized in that it is mixed by abrasive material, tensio-active agent, pH value conditioning agent, oxygenant and deionized water to form.
The concrete experimental program of the above-mentioned said polishing fluid that is used for silica dioxide medium is as follows:
Dispose the 2000g polishing fluid, need get and account for gross weight is 37.5% water-soluble silicon sol abrasive material 750g, particle diameter 60-80nm, account for gross weight and be 1.5%% hydrogen peroxide 30g, account for gross weight and be 3% potassium hydroxide 60g, account for gross weight and be 0.75% alkylol amide 15g, account for gross weight and be 57.25% deionized water.
The preparation method of polishing fluid is: water-soluble silicon sol abrasive material, hydrogen peroxide, potassium hydroxide, alkylol amide and the deionized water that at first will prepare polishing fluid are got material by above-mentioned formula rate, and carry out filtration, purification respectively and handle, then in the environment of thousand grades of decontamination chambers, with various components under the power of negative pressure of vacuum, get final product by stirring in the mass flowmeter input pod jar and fully, mixing.
Laboratory test results: above-mentioned polishing fluid pH value is 10.2, and size distribution is 60-80nm.On wind and thunder C6382I/YJ type polishing machine, is 100g/cm at pressure with the polishing fluid for preparing
2, the polishing disk rotating speed is under the condition of 80 rev/mins, flow 900ml/ minute, and the silicon chip of silica dioxide medium is polished, the mean rate that records silica dioxide medium is 0.16 micron/minute, surface quality is good.
Claims (8)
1, a kind of polishing fluid that is used for silica dioxide medium, it is characterized in that it is mixed by abrasive material, tensio-active agent, pH value conditioning agent, oxygenant and deionized water forms, wherein abrasive material accounts for 10～50% of gross weight, 0.01～0.6% of surfactant comprise gross weight, the pH value conditioning agent accounts for 1～6% of gross weight, and oxygenant accounts for 0.01～15% of gross weight, and deionized water accounts for 28.4～88.98% of gross weight, polishing fluid pH value scope is 11～12, and particle diameter is 15nm～100nm.
2,, it is characterized in that said abrasive material is meant that particle size range is the water-soluble silicon sol of 15nm～100nm or the water-sol of metal oxide according to the said a kind of polishing fluid that is used for silica dioxide medium of claim 1.
3, according to the said a kind of polishing fluid that is used for silica dioxide medium of claim 2, the water-sol that it is characterized in that said metal oxide is SiO
2, Al
2O
3, CeO
2Or TiO
2The water-sol.
4,, it is characterized in that said tensio-active agent is is nonionic surface active agent according to the said a kind of polishing fluid that is used for silica dioxide medium of claim 1.
5,, it is characterized in that said nonionic surface active agent is aliphatic alcohol polyoxyethylene or alkylol amide according to the said a kind of polishing fluid that is used for silica dioxide medium of claim 4.
6,, it is characterized in that said PH conditioning agent is one or more combinations in sodium hydroxide, potassium hydroxide, many hydroxyls polyamines, the amine according to the said a kind of polishing fluid that is used for silica dioxide medium of claim 1.
7,, it is characterized in that said oxygenant is one or more combinations in hydrogen peroxide, iron nitrate, aluminum nitrate, the persulphate according to the said a kind of polishing fluid that is used for silica dioxide medium of claim 1.
8, a kind of polishing fluid preparation method who is used for silica dioxide medium, the abrasive material, tensio-active agent, pH value conditioning agent, oxygenant and the deionized water that it is characterized in that at first will preparing polishing fluid are got material by formula rate, and carry out filtration, purification respectively and handle, then in the environment of thousand grades of decontamination chambers, with various components under the power of negative pressure of vacuum, get final product by stirring in the mass flowmeter input pod jar and fully, mixing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006100145970A CN101096573A (en) | 2006-06-30 | 2006-06-30 | Polishing liquid for silica dioxide medium and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006100145970A CN101096573A (en) | 2006-06-30 | 2006-06-30 | Polishing liquid for silica dioxide medium and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN101096573A true CN101096573A (en) | 2008-01-02 |
Family
ID=39010662
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| CNA2006100145970A Pending CN101096573A (en) | 2006-06-30 | 2006-06-30 | Polishing liquid for silica dioxide medium and preparation method thereof |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102010665A (en) * | 2010-07-21 | 2011-04-13 | 天津晶岭微电子材料有限公司 | Method for preparing polishing solution of tungsten plug in multilayer wiring of ultralarge-scale integrated circuit |
| CN102010666A (en) * | 2010-07-21 | 2011-04-13 | 天津晶岭微电子材料有限公司 | Method for preparing chemical mechanical polishing solution for silicon substrate of ultra large scale integrated circuit |
| CN102337082A (en) * | 2011-07-11 | 2012-02-01 | 河南科技学院 | Water-based 6H-SiC monocrystalline substrate chemical mechanical polishing (CMP) solution and preparation method thereof |
| CN102452036A (en) * | 2010-10-29 | 2012-05-16 | 安集微电子（上海）有限公司 | Chemical mechanical polishing method for tungsten |
| CN101475778B (en) * | 2009-01-20 | 2012-05-23 | 清华大学 | Polishing composite for gallium arsenide wafer and preparation thereof |
| CN104109481A (en) * | 2014-06-26 | 2014-10-22 | 河北宇天昊远纳米材料有限公司 | Preparation method of sapphire substrate polishing solution |
| CN108102554A (en) * | 2017-12-21 | 2018-06-01 | 北京世纪金光半导体有限公司 | A kind of polishing fluid for removing silica dioxide granule |
| CN112410719A (en) * | 2020-10-20 | 2021-02-26 | 安徽华飞机械铸锻有限公司 | Wear-resistant heat-resistant steel |
-
2006
- 2006-06-30 CN CNA2006100145970A patent/CN101096573A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101475778B (en) * | 2009-01-20 | 2012-05-23 | 清华大学 | Polishing composite for gallium arsenide wafer and preparation thereof |
| CN102010665A (en) * | 2010-07-21 | 2011-04-13 | 天津晶岭微电子材料有限公司 | Method for preparing polishing solution of tungsten plug in multilayer wiring of ultralarge-scale integrated circuit |
| CN102010666A (en) * | 2010-07-21 | 2011-04-13 | 天津晶岭微电子材料有限公司 | Method for preparing chemical mechanical polishing solution for silicon substrate of ultra large scale integrated circuit |
| CN102010666B (en) * | 2010-07-21 | 2013-03-06 | 天津晶岭微电子材料有限公司 | Method for preparing chemical mechanical polishing solution for silicon substrate of ultra large scale integrated circuit |
| CN102010665B (en) * | 2010-07-21 | 2013-06-05 | 天津晶岭微电子材料有限公司 | Method for preparing polishing solution of tungsten plug in multilayer wiring of ultralarge-scale integrated circuit |
| CN102452036A (en) * | 2010-10-29 | 2012-05-16 | 安集微电子（上海）有限公司 | Chemical mechanical polishing method for tungsten |
| CN102337082A (en) * | 2011-07-11 | 2012-02-01 | 河南科技学院 | Water-based 6H-SiC monocrystalline substrate chemical mechanical polishing (CMP) solution and preparation method thereof |
| CN104109481A (en) * | 2014-06-26 | 2014-10-22 | 河北宇天昊远纳米材料有限公司 | Preparation method of sapphire substrate polishing solution |
| CN108102554A (en) * | 2017-12-21 | 2018-06-01 | 北京世纪金光半导体有限公司 | A kind of polishing fluid for removing silica dioxide granule |
| CN112410719A (en) * | 2020-10-20 | 2021-02-26 | 安徽华飞机械铸锻有限公司 | Wear-resistant heat-resistant steel |
| CN112410719B (en) * | 2020-10-20 | 2023-01-20 | 安徽华飞机械铸锻有限公司 | Wear-resistant heat-resistant steel |
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