CN114854500A - Additive and cleaning solution for cleaning silicon wafer and cleaning method for silicon wafer after texturing - Google Patents

Additive and cleaning solution for cleaning silicon wafer and cleaning method for silicon wafer after texturing Download PDF

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Publication number
CN114854500A
CN114854500A CN202210513137.1A CN202210513137A CN114854500A CN 114854500 A CN114854500 A CN 114854500A CN 202210513137 A CN202210513137 A CN 202210513137A CN 114854500 A CN114854500 A CN 114854500A
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Prior art keywords
cleaning
silicon wafer
additive
sodium
alkali
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CN202210513137.1A
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Chinese (zh)
Inventor
徐海舰
杨勇
章圆圆
陈培良
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Changzhou Shichuang Energy Co Ltd
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Changzhou Shichuang Energy Co Ltd
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Priority to CN202210513137.1A priority Critical patent/CN114854500A/en
Publication of CN114854500A publication Critical patent/CN114854500A/en
Priority to PCT/CN2023/080666 priority patent/WO2023216702A1/en
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/02—Anionic compounds
    • C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/044—Hydroxides or bases
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/046—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/08—Silicates
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C11D3/2079—Monocarboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/33—Amino carboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3942—Inorganic per-compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • C11D2111/22—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention provides an additive and a cleaning solution for cleaning a silicon wafer after texturing and a cleaning method for the silicon wafer after texturing. The additive for cleaning the silicon wafer comprises the following components in percentage by mass: 3 to 5 percent of water softener, 3 to 6 percent of oxidant, 0.01 to 0.05 percent of low-foam alkali-resistant penetrating agent, 1 to 3 percent of buffering agent and the balance of water; wherein the oxidant is selected from the group consisting of sodium hypochlorite, sodium chlorite, sodium perchlorate and sodium perborate, and the low foaming alkali-resistant penetrant is a sulfonate surfactant. By adding the additive into the cleaning solution, the cost can be greatly reduced in actual production, the cleaning is more thorough, and the efficiency of the single crystal cell can be improved by 0.01-0.05%. The production cost is reduced, the cost of sewage treatment is reduced, and the pollution to natural water and soil is avoided.

Description

Additive and cleaning solution for cleaning silicon wafer and cleaning method for silicon wafer after texturing
The technical field is as follows:
the invention relates to the technical field of silicon wafer cleaning, in particular to an additive and a cleaning solution for cleaning a silicon wafer after texturing and a cleaning method for the silicon wafer after texturing.
Background art:
in the production process of the solar single crystal cell, the texturing is one important process, a texturing additive needs to be used in the texturing process, and if the texturing additive is remained after the texturing process is finished, the efficiency and the yield of the cell piece are affected, so that a cleaning process needs to be added after the texturing is finished.
In the existing cleaning procedure after texturing, a mixed solution of hydrogen peroxide and alkali is generally adopted to remove texturing liquid and dirt, wherein the hydrogen peroxide is used for providing oxidation to decompose organic matters adsorbed on the surface of a silicon wafer, the alkali can enhance the oxidation of the hydrogen peroxide, and the alkali and the hydrogen peroxide are required to be continuously supplemented in the cleaning process after texturing to ensure the cleaning effect. Therefore, a large amount of hydrogen peroxide and alkali is required for the washing operation, which has the following disadvantages: (1) the production cost of the battery piece is high; (2) alkali and hydrogen peroxide have great harmfulness to natural environment, special treatment is needed in the wastewater treatment process, once the treatment is improper, environmental problems are easily caused, and natural water and soil are harmed; (3) the post-cleaning effect of alkali and hydrogen peroxide is not ideal, and the efficiency improvement of the silicon wafer after being made into a battery is restricted.
The invention content is as follows:
the invention aims to provide an additive and a cleaning solution for cleaning a silicon wafer and a cleaning method for the silicon wafer after texturing, aiming at the defects of the prior art, so that the use amount of alkali and hydrogen peroxide can be reduced, and the efficiency of a single crystal cell can be improved.
The technical scheme for realizing the purpose of the invention is as follows: an additive for cleaning silicon wafers comprises the following components in percentage by mass: 3 to 5 percent of water softener, 3 to 6 percent of oxidant, 0.01 to 0.05 percent of low-foam alkali-resistant penetrating agent, 1 to 3 percent of buffering agent and the balance of water; wherein the oxidant is selected from the group consisting of sodium hypochlorite, sodium chlorite, sodium perchlorate and sodium perborate, and the low foaming alkali-resistant penetrant is a sulfonate surfactant.
In some embodiments, the oxidizing agent includes sodium hypochlorite and sodium chlorite, wherein the sodium hypochlorite accounts for 2-3% of the additive by mass, and the sodium chlorite accounts for 1-3% of the additive by mass. The cleaning efficiency can be improved by the oxidizer compounded by sodium hypochlorite and sodium chlorite.
In some embodiments, the water softener is selected from the group consisting of sodium stearate and disodium edetate.
In some embodiments, the buffering agent is selected from the group consisting of sodium sulfate, sodium silicate, and sodium acetate.
The application also provides a silicon wafer cleaning liquid, which comprises a mixed solution of alkali and hydrogen peroxide and the additive for cleaning the silicon wafer, wherein the mass ratio of the mixed solution of alkali and hydrogen peroxide to the additive for cleaning the silicon wafer is 100: 0.2-0.5.
In some embodiments, the mixed solution of the alkali and the hydrogen peroxide contains 0.9 to 1.5 mass percent of hydrogen peroxide and 0.06 to 0.1 mass percent of sodium hydroxide or potassium hydroxide.
The application also provides a method for cleaning the silicon wafer after texturing, which comprises the following steps:
s1, adding 3-5% of water softener, 3-6% of oxidant, 0.01-0.05% of low-foam alkali-resistant penetrating agent and 1-3% of buffer agent into the balance of water; mixing uniformly to prepare the additive for cleaning the silicon wafer; wherein the oxidant is selected from the group consisting of sodium hypochlorite, sodium chlorite, sodium perchlorate and sodium perborate, and the low foaming alkali-resistant penetrant is a sulfonate surfactant;
s2, adding the silicon wafer cleaning additive prepared in the step S1 into a mixed solution of alkali and hydrogen peroxide, and uniformly mixing to prepare a silicon wafer cleaning solution; wherein the mass ratio of the additive for cleaning the silicon wafer to the mixed solution of the alkali and the hydrogen peroxide is 0.2-0.5: 100; the alkali in the mixed solution of the alkali and the hydrogen peroxide is sodium hydroxide or potassium hydroxide.
S3, putting the silicon wafer into the silicon wafer cleaning solution prepared in the step S2, and controlling the cleaning temperature to be 60-70 ℃ and the cleaning time to be 150-200S; and then soaking in water for 180-200 s to finish cleaning.
In some embodiments, in step S1, the oxidant includes sodium hypochlorite and sodium chlorite, the sodium hypochlorite accounts for 2% to 3% by mass of the additive, and the sodium chlorite accounts for 1% to 3% by mass of the additive.
In some embodiments, in step S2, the mixed solution of alkali and hydrogen peroxide contains 0.9 to 1.5 mass% of hydrogen peroxide and 0.06 to 0.1 mass% of alkali.
In some embodiments, in step S3, the cleaning temperature is 65-70 ℃ and the cleaning time is 180-200S.
The invention has the beneficial effects that:
(1) the invention provides an additive for cleaning a silicon wafer, a cleaning solution and a cleaning method for the silicon wafer after texturing. In the actual production, the consumption of the single crystal cell and the energy consumption of the battery can be reduced by 80%, the cost is greatly reduced, the cleaning is more thorough, and the efficiency of the single crystal cell can be improved by 0.01-0.05%. The production cost is reduced, the cost of sewage treatment is reduced, and the pollution to natural water and soil is avoided.
(2) The water softener can reduce the hardness of water, help to control the generation of foam in the cleaning process and promote the cleaning effect. The oxidant provides oxidability for the additive for cleaning the silicon wafer, can oxidize and decompose grease on the surface of the silicon wafer, and is beneficial to stripping organic dirty components on the surface of the silicon wafer. The buffer provides a buffering effect for the alkalinity of the additive, which can enhance the cleaning effect, and the buffer also has a foam stabilizing effect. The low-foam alkali-resistant penetrating agent has good wettability and permeability under an alkaline condition, has less foam in the cleaning process, and has no adsorption on the surface of a silicon wafer, so that organic matters such as a texturing solution can be completely removed in the post-cleaning procedure of the silicon wafer, and the additive for cleaning the silicon wafer is completely adsorbed on the surface of the silicon wafer in zero, thereby providing possibility for improving the efficiency of a single crystal cell. In addition, the additive is alkaline as a whole, but the dosage is reduced by about 80 percent compared with the traditional cleaning of alkali and hydrogen peroxide, and the subsequent sewage treatment cost is greatly reduced.
The specific implementation mode is as follows:
the following detailed description of the preferred embodiments of the present invention is provided to enable those skilled in the art to more readily understand the advantages and features of the present invention and to clearly define the scope of the invention.
Example 1
An additive for cleaning silicon wafers comprises the following components in percentage by mass: 3% of water softener, 4% of oxidant, 0.05% of low-foam alkali-resistant penetrating agent, 1% of buffering agent and the balance of water.
Wherein the water softener is sodium stearate, and the oxidant comprises sodium hypochlorite and sodium chlorite. The sodium hypochlorite accounts for 3% of the additive by mass, the sodium chlorite accounts for 1% of the additive by mass, the low-foam alkali-resistant penetrating agent is a sulfonate surfactant, and the buffering agent is sodium sulfate.
Example 2
An additive for cleaning silicon wafers comprises the following components in percentage by mass: 4% of water softener, 5% of oxidant, 0.03% of low-foam alkali-resistant penetrating agent, 2% of buffering agent and the balance of water.
The water softener is sodium stearate, the oxidant comprises sodium hypochlorite and sodium chlorite, the sodium hypochlorite accounts for 2% of the additive by mass, the sodium chlorite accounts for 3% of the additive by mass, the low-foam alkali-resistant penetrating agent is a sulfonate surfactant, and the buffering agent is sodium sulfate.
Example 3
An additive for cleaning silicon wafers comprises the following components in percentage by mass: 5% of water softener, 3% of oxidant, 0.01% of low-foam alkali-resistant penetrating agent, 3% of buffering agent and the balance of water.
The water softener is disodium ethylene diamine tetraacetate, the oxidant comprises sodium hypochlorite and sodium perchlorate, the sodium hypochlorite accounts for 2% of the additive by mass, the sodium chlorite accounts for 1% of the additive by mass, the low-foam alkali-resistant penetrating agent is a sulfonate surfactant, and the buffering agent is sodium silicate.
Example 4
An additive for cleaning silicon wafers comprises the following components in percentage by mass: 3.5 percent of water softener, 6 percent of oxidant, 0.02 percent of low-foam alkali-resistant penetrating agent, 3 percent of buffering agent and the balance of water.
The water softener is a mixture of sodium stearate and disodium ethylene diamine tetraacetate, the oxidant comprises sodium chlorite and sodium perborate, the sodium chlorite accounts for 3% of the additive by mass, the sodium perborate accounts for 3% of the additive by mass, the low-foam alkali-resistant penetrating agent is a sulfonate surfactant, and the buffering agent is sodium acetate.
Example 5
A silicon wafer cleaning liquid comprises a mixed solution of alkali and hydrogen peroxide and the additive for cleaning silicon wafers in the embodiment 1. Wherein the mass ratio of the mixed solution of alkali and hydrogen peroxide to the silicon wafer cleaning additive is 100: 0.2.
the mixed solution of the alkali and the hydrogen peroxide contains 0.9-1.5 percent (such as 0.9 percent, 1 percent, 1.3 percent and 1.5 percent) of hydrogen peroxide and 0.06-0.1 percent (such as 0.06 percent, 0.07 percent, 0.09 percent and 0.1 percent) of alkali by mass, wherein the alkali is sodium hydroxide.
Example 6
Different from the embodiment 5, the additive is the silicon wafer cleaning additive in the embodiment 2, and the mass ratio of the mixed solution of the alkali and the hydrogen peroxide to the silicon wafer cleaning additive is 100: 0.3, the alkali is potassium hydroxide.
Example 7
Different from the embodiment 5, the additive is the silicon wafer cleaning additive in the embodiment 3, and the mass ratio of the mixed solution of the alkali and the hydrogen peroxide to the silicon wafer cleaning additive is 100: 0.5, the alkali is potassium hydroxide.
Example 8
Different from the embodiment 5, the additive is the silicon wafer cleaning additive in the embodiment 4, and the mass ratio of the mixed solution of the alkali and the hydrogen peroxide to the silicon wafer cleaning additive is 100: 0.5, the alkali is sodium hydroxide.
Example 9
A cleaning method for silicon wafers after texturing comprises the following steps:
s1, adding 3-5% of water softener, 3-6% of oxidant, 0.01-0.05% of low-foam alkali-resistant penetrating agent and 1-3% of buffer agent into the balance of water; mixing uniformly to prepare the additive for cleaning the silicon wafer; wherein the oxidant is selected from the group consisting of sodium hypochlorite, sodium chlorite, sodium perchlorate and sodium perborate, and the low foaming alkali-resistant penetrant is a sulfonate surfactant;
s2, adding the silicon wafer cleaning additive prepared in the step S1 into a mixed solution of alkali and hydrogen peroxide, and uniformly mixing to prepare a silicon wafer cleaning solution; wherein the mass ratio of the additive for cleaning the silicon wafer to the mixed solution of the alkali and the hydrogen peroxide is 0.2-0.5: 100; and the alkali in the mixed solution of the alkali and the hydrogen peroxide is sodium hydroxide or potassium hydroxide.
S3, putting the silicon wafer into the silicon wafer cleaning solution prepared in the step S2, and controlling the cleaning temperature to be 60-70 ℃ and the cleaning time to be 150-200S; then, soaking in water for 180-200 s to finish cleaning.
In the step S1, the oxidant includes sodium hypochlorite and sodium chlorite, the sodium hypochlorite accounts for 2% to 3% by mass of the additive, and the sodium chlorite accounts for 1% to 3% by mass of the additive.
In the step S2, the mixed solution of the alkali and the hydrogen peroxide contains 0.9 to 1.5 mass% of hydrogen peroxide and 0.06 to 0.1 mass% of alkali.
In the step S3, the cleaning temperature is 65-70 ℃, and the cleaning time is 180-200S.
Comparative example 1
Cleaning the silicon wafer after texturing by adopting a mixed solution of alkali and hydrogen peroxide, wherein the mixed solution of alkali and hydrogen peroxide contains 0.9-1.5% of hydrogen peroxide and 0.06-0.1% of alkali by mass, and the alkali is sodium hydroxide or potassium hydroxide.
The silicon wafers after texturing were cleaned in the same procedure as in the present application using the cleaning solution of comparative example 1 and the cleaning solution to which the additives of examples 1 to 4 were added, respectively, and the results are shown in Table 1.
TABLE 1
Figure 183346DEST_PATH_IMAGE001
The performance test results show that after the additives of examples 1 to 4 of the invention are adopted in the cleaning procedure after texturing, compared with a comparative example, the cleaning effect is not reduced, and even the battery efficiency is generally improved by 0.01 to 0.05 percent. Meanwhile, 80% of consumption of alkali and hydrogen peroxide can be reduced, and cost is greatly reduced.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention.

Claims (10)

1. An additive for cleaning silicon wafers is characterized in that: the weight percentage of each component is as follows: 3 to 5 percent of water softener, 3 to 6 percent of oxidant, 0.01 to 0.05 percent of low-foam alkali-resistant penetrating agent, 1 to 3 percent of buffering agent and the balance of water; wherein the oxidant is selected from the group consisting of sodium hypochlorite, sodium chlorite, sodium perchlorate and sodium perborate, and the low foaming alkali-resistant penetrant is a sulfonate surfactant.
2. The additive for cleaning silicon wafers according to claim 1, wherein: the oxidant comprises sodium hypochlorite and sodium chlorite, wherein the sodium hypochlorite accounts for 2-3% of the additive by mass, and the sodium chlorite accounts for 1-3% of the additive by mass.
3. The additive for cleaning silicon wafers according to claim 1, wherein: the water softener is selected from the group consisting of sodium stearate and disodium edetate.
4. The additive for cleaning silicon wafers according to claim 1, wherein: the buffering agent is selected from the group consisting of sodium sulfate, sodium silicate and sodium acetate.
5. A silicon wafer cleaning solution is characterized in that: the silicon wafer cleaning additive comprises a mixed solution of alkali and hydrogen peroxide and the silicon wafer cleaning additive as claimed in any one of claims 1 to 4, wherein the mass ratio of the mixed solution of alkali and hydrogen peroxide to the silicon wafer cleaning additive is 100: 0.2-0.5.
6. The silicon wafer cleaning liquid as claimed in claim 5, wherein: the mixed solution of the alkali and the hydrogen peroxide contains 0.9 to 1.5 mass percent of hydrogen peroxide and 0.06 to 0.1 mass percent of sodium hydroxide or potassium hydroxide.
7. A method for cleaning a silicon wafer after texturing is characterized by comprising the following steps: the method comprises the following steps:
s1, adding 3-5% of water softener, 3-6% of oxidant, 0.01-0.05% of low-foam alkali-resistant penetrating agent and 1-3% of buffer agent into the balance of water; mixing uniformly to prepare the additive for cleaning the silicon wafer; wherein the oxidant is selected from the group consisting of sodium hypochlorite, sodium chlorite, sodium perchlorate and sodium perborate, and the low foaming alkali-resistant penetrant is a sulfonate surfactant;
s2, adding the silicon wafer cleaning additive prepared in the step S1 into a mixed solution of alkali and hydrogen peroxide, and uniformly mixing to prepare a silicon wafer cleaning solution; wherein the mass ratio of the additive for cleaning the silicon wafer to the mixed solution of the alkali and the hydrogen peroxide is 0.2-0.5: 100; the alkali in the mixed solution of the alkali and the hydrogen peroxide adopts sodium hydroxide or potassium hydroxide;
s3, putting the silicon wafer into the silicon wafer cleaning solution prepared in the step S2, and controlling the cleaning temperature to be 60-70 ℃ and the cleaning time to be 150-200S; and then soaking in water for 180-200 s to finish cleaning.
8. The method for cleaning the silicon wafer after texturing according to claim 7, wherein: in the step S1, the oxidant includes sodium hypochlorite and sodium chlorite, the sodium hypochlorite accounts for 2% to 3% by mass of the additive, and the sodium chlorite accounts for 1% to 3% by mass of the additive.
9. The method for cleaning the silicon wafer after texturing according to claim 7, wherein: in the step S2, the mixed solution of the alkali and the hydrogen peroxide contains 0.9 to 1.5 mass% of hydrogen peroxide and 0.06 to 0.1 mass% of alkali.
10. The method for cleaning the silicon wafer after texturing according to claim 7, wherein: in the step S3, the cleaning temperature is 65-70 ℃, and the cleaning time is 180-200S.
CN202210513137.1A 2022-05-12 2022-05-12 Additive and cleaning solution for cleaning silicon wafer and cleaning method for silicon wafer after texturing Pending CN114854500A (en)

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