CN103646841B - A kind of plasma etch apparatus - Google Patents
A kind of plasma etch apparatus Download PDFInfo
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- CN103646841B CN103646841B CN201310597934.3A CN201310597934A CN103646841B CN 103646841 B CN103646841 B CN 103646841B CN 201310597934 A CN201310597934 A CN 201310597934A CN 103646841 B CN103646841 B CN 103646841B
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- reaction cavity
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- etch apparatus
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Abstract
The present invention relates to microelectronics technology, particularly relate to a kind of plasma etch apparatus, this equipment comprises reaction cavity, cover plate, Electrostatic Absorption dish, cantilever and molecular pump; Described cover plate is positioned at the top of described reaction cavity, and the central area of this cover plate is provided with gas nozzle; It is inner that described Electrostatic Absorption dish is suspended in described reaction cavity; The madial wall of described reaction cavity is fixed in one end of described cantilever, and the other end is connected with the sidewall of described Electrostatic Absorption dish, and described cantilever is provided with several holes running through this cantilever in vertical direction; Described molecular pump is positioned at the below of described reaction cavity.The present invention, by increasing the through hole of some on existing cantilever, adds the uniformity of gas, thus improves the partially slow present situation of local air flow speed, and then avoids the inhomogeneities of etch rate of crystal column surface, and finally improves the yield of product.
Description
Technical field
The present invention relates to microelectronics technology, particularly relate to a kind of plasma etch apparatus.
Background technology
Plasma etching, it is modal a kind of form in dry etching, its principle is that the gas being exposed to electronics regions is formed plasma, the gas of consequent ionized gas and release high energy electron composition, thus define plasma or ion, when ionise gas atoms is by electric field acceleration, enough strength and surperficial expulsion power tightly jointing material or etched surfaces can be discharged.
At present, the cavity of the LAM plasma etching equipment inside of 12 cun is an orbicular symmetric cavity, its objective is to ensure the symmetric uniformity that gas flow leads, this method for designing just makes Electrostatic Absorption dish that a cantilever must be had to be supported on the centre of whole cavity, but just because of the design of this cantilever cause gas from directly over flow toward immediately below time can be stopped by this cantilever, cause the air velocity of local partially slow, thus cause the etch rate of this part of crystal column surface partially slow compared with other regions.
Chinese patent (publication No.: 200910158947) describe a kind of multiple frequency plasma etch reactor, wherein in a vacuum plasma treatment cabin, by activated plasma under several frequency, thus make the plasma exciatiaon caused by several frequency side by side cause several different phenomenon to betide in plasma, with plasma, workpiece is processed thus.Described cabin comprises top electrode and the hearth electrode of central authorities, and a top electrode around or hearth electrode device, itself or encouraged by RF, or be connected on a reference potential by a filter apparatus, wherein this filter apparatus makes at least one plasma excitation frequency pass through, but intercepts other frequency.Do not record in this patent documentation the design how solved due to cantilever cause gas from directly over flow toward immediately below time can be stopped by this cantilever, cause the air velocity of local partially slow, and the problem that the etch rate of the crystal column surface corresponding part caused is partially slow compared with other regions.
(publication No.: 201110415354) describe a kind of plasma etching silicon electrode plate, it can suppress the concave-convex surface because plasma etching produces and realize uniform etching Chinese patent.Plasma etching silicon electrode plate of the present invention is made up of the monocrystalline silicon added as dopant by B and AL, and the concentration of AL is at 1 × 1013atoms/cm
3above.In this plasma etching silicon electrode plate, electrical characteristics homogenizing in face of monocrystalline silicon, can make concavo-convexly to become few when surface consumes in plasma etching, and can suppress crackle.In this patent documentation and the unresolved design due to cantilever cause gas from directly over flow toward immediately below time can be stopped by this cantilever, cause the air velocity of local partially slow, thus the problem causing the etch rate of this part of crystal column surface partially slow compared with other regions.
Summary of the invention
For above-mentioned technical problem, this invention describes a kind of plasma etch apparatus, wherein, described equipment comprises reaction cavity, cover plate, Electrostatic Absorption dish, cantilever and molecular pump;
Described cover plate is positioned at the top of described reaction cavity, and the central area of this cover plate is provided with gas nozzle;
It is inner that described Electrostatic Absorption dish is suspended in described reaction cavity, and level is suspended in described reaction cavity by the supporting role of described cantilever;
The madial wall of described reaction cavity is fixed in one end of described cantilever, and the other end of described cantilever is connected with the sidewall of described Electrostatic Absorption dish, and described cantilever is provided with several holes running through this cantilever in vertical direction; Described molecular pump is positioned at the below of described reaction cavity.
Above-mentioned plasma etch apparatus, wherein, described reaction cavity is vacuum reaction cavity.
Above-mentioned plasma etch apparatus, wherein, described reaction cavity is orbicular symmetrical structure.
Above-mentioned plasma etch apparatus, wherein, for being tightly connected between described gas nozzle and described cover plate.
Above-mentioned plasma etch apparatus, wherein, described gas nozzle is connected with the gas inlet pipe of top.
Above-mentioned plasma etch apparatus, wherein, the spout of described gas nozzle is adjustable structure.
Above-mentioned plasma etch apparatus, wherein, the exhaust of described molecular pump is directed to Central Symmetry distribution.
Above-mentioned plasma etch apparatus, wherein, the bottom of described reaction cavity is open type structure, and and there is certain gap between described molecular pump.
Above-mentioned plasma etch apparatus, wherein, described cantilever is hollow type structure, and is provided with electric wire in described hollow type structure, and one end of described electric wire is connected with described Electrostatic Absorption dish, and the other end is connected with extraneous power supply.
Above-mentioned plasma etch apparatus, wherein, described described hole and described hollow type structure not overlapping.
In sum, owing to have employed technique scheme, a kind of plasma etch apparatus of the present invention, by increasing the through hole of some on existing cantilever, allowing air-flow also can run through described cantilever by this through hole, making air-flow realize flowing uniformly from top to bottom, further increase the uniformity of gas, thus improve the partially slow present situation of local air flow speed, and then avoid the inhomogeneities of etch rate of crystal column surface, and finally improve the yield of product.
Accompanying drawing explanation
Fig. 1 is the structural representation of plasma etch apparatus of the present invention;
Fig. 2 is the principle schematic of plasma etch apparatus of the present invention.
Embodiment
Below in conjunction with accompanying drawing, plasma etch apparatus of the present invention is described in detail:
Fig. 1 is the structural representation of plasma etch apparatus of the present invention; As shown in Figure 1, a kind of plasma etch apparatus, comprises reaction cavity 1, cover plate 2, Electrostatic Absorption dish 3, cantilever 4 and molecular pump 5; Described cover plate 2 is positioned at the top of described reaction cavity 1, and the central area of this cover plate 2 is provided with gas nozzle (not marking in figure), described gas nozzle is connected with the gas inlet pipe (not marking in figure) above it, and is input in described reaction cavity 1 by gas by this gas inlet pipe.
Preferably, the spout of described gas nozzle is adjustable structure, namely by regulating the size of spout, and from controlling the size spraying air-flow, to meet the demand to air-flow size in actual process.
Further, described Electrostatic Absorption dish 3 is positioned at the inside of described reaction cavity 1, by one end of described cantilever 4 being fixed on the madial wall of reaction cavity 1, the other end is fixed on the lateral wall of described Electrostatic Absorption dish 3, thus realize the inside described Electrostatic Absorption dish 3 being suspended in described reaction cavity 1 by supporting role, the inside of described cantilever 4 is provided with the structures such as electric wire, described Electrostatic Absorption dish 3 is connected with extraneous power supply (not marking in figure) by this electric wire, electric energy required when providing running as Electrostatic Absorption dish 3.Described cantilever 4 is also provided with several run through this cantilever through hole 6 in vertical direction, these several through holes 6 avoiding the structures such as cantilever 4 internal wire, should be arranged under namely not affecting the prerequisite of described cantilever 4 normal operation.
Wherein, between the opening bottom described reaction cavity 1 and molecular pump 5, there is certain gap, thus can be taken away by the excessive gas of molecular pump 5 by reaction cavity 1 inside.
The use procedure of a kind of plasma etch apparatus of the present invention in real technique is introduced in detail below in conjunction with specific embodiment:
Fig. 2 is the principle schematic of plasma etch apparatus of the present invention; As shown in Figure 2:
First, by the upper surface needing the silicon chip carrying out etching technics to be positioned over Electrostatic Absorption dish 3, namely the inside of reaction cavity 1 is placed on, after this Electrostatic Absorption dish 3 passes through to connect direct voltage on its positive and negative electrode matrix, Coulomb attraction is produced on electrode body surface, suction-operated is produced to silicon chip, with this, fixation is played to silicon chip, thus be that ensuing etching technics is ready.
Then, the gas nozzle being positioned at reaction cavity 1 top is opened, and by regulating the size of this gas nozzle openings, the air-flow of gas is made to enter described reaction cavity 1 with the speed of applicable technique inner, and (bombard) or sputtering (sputter) are bombarded to the surface molecular of the material that is etched, thus formation volatile substances, the object of etching is realized with this.
Wherein, due to support described Electrostatic Absorption dish 3 cantilever 4 on be provided with some through holes 6, and these several through holes 6 all run through described cantilever in vertical direction, make the gas flowed need not walk around described cantilever 4 from top to bottom, and can pass from through hole 6, thus ensure that the uniformity that whole gas circulates.
Further, the molecular pump 5 be positioned at below reaction cavity 1 utilizes the rotor of High Rotation Speed MOMENTUM TRANSMISSION to gas molecule, make the volatile substances produced in technique under the effect of molecular pump 5, extracted out in reaction cavity 1 by the opening bottom reaction cavity 1 and the space between molecular pump 5, and finally complete etching technics.
Owing to have employed technique scheme, plasma etch apparatus of the present invention, by increasing the through hole of some on existing cantilever, allow air-flow also can pass described cantilever by this through hole, make air-flow realize flowing uniformly from top to bottom, further increase the uniformity of gas, thus improve the partially slow present situation of local air flow speed, and then avoid the inhomogeneities of etch rate of crystal column surface, and finally improve the yield of product.
By illustrating and accompanying drawing, giving the exemplary embodiments of the ad hoc structure of embodiment, based on the present invention's spirit, also can do other conversion.Although foregoing invention proposes existing preferred embodiment, but these contents are not as limitation.
For a person skilled in the art, after reading above-mentioned explanation, various changes and modifications undoubtedly will be apparent.Therefore, appending claims should regard the whole change and correction of containing true intention of the present invention and scope as.In Claims scope, the scope of any and all equivalences and content, all should think and still belong to the intent and scope of the invention.
Claims (9)
1. a plasma etch apparatus, is characterized in that, described equipment comprises reaction cavity, cover plate, Electrostatic Absorption dish, cantilever and molecular pump;
Described cover plate is positioned at the top of described reaction cavity, and the central area of this cover plate is provided with gas nozzle;
It is inner that described Electrostatic Absorption dish is suspended in described reaction cavity, and level is suspended in described reaction cavity by the supporting role of described cantilever;
The madial wall of described reaction cavity is fixed in one end of described cantilever, and the other end of described cantilever is connected with the sidewall of described Electrostatic Absorption dish, and described cantilever is provided with several holes running through this cantilever in vertical direction; Described molecular pump is positioned at the below of described reaction cavity;
Wherein said cantilever is hollow type structure, and is provided with electric wire in described hollow type structure, and one end of described electric wire is connected with described Electrostatic Absorption dish, and the other end is connected with extraneous power supply.
2. plasma etch apparatus as claimed in claim 1, it is characterized in that, described reaction cavity is vacuum reaction cavity.
3. plasma etch apparatus as claimed in claim 2, it is characterized in that, described reaction cavity is orbicular symmetrical structure.
4. plasma etch apparatus as claimed in claim 1, is characterized in that, for being tightly connected between described gas nozzle and described cover plate.
5. plasma etch apparatus as claimed in claim 4, it is characterized in that, described gas nozzle is connected with the gas inlet pipe of top.
6. plasma etch apparatus as claimed in claim 5, it is characterized in that, the spout of described gas nozzle is adjustable structure.
7. plasma etch apparatus as claimed in claim 1, is characterized in that, the exhaust of described molecular pump is directed to Central Symmetry distribution.
8. plasma etch apparatus as claimed in claim 1, it is characterized in that, the bottom of described reaction cavity is open type structure, and and there is certain gap between described molecular pump.
9. plasma etch apparatus as claimed in claim 1, is characterized in that, described hole and described hollow type structure not overlapping.
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| CN201310597934.3A CN103646841B (en) | 2013-11-22 | 2013-11-22 | A kind of plasma etch apparatus |
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| CN201310597934.3A CN103646841B (en) | 2013-11-22 | 2013-11-22 | A kind of plasma etch apparatus |
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| CN103646841B true CN103646841B (en) | 2016-01-27 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104465292B (en) * | 2014-11-28 | 2017-05-03 | 上海华力微电子有限公司 | Pretreatment method for ion implanter |
| CN105845536A (en) * | 2016-05-12 | 2016-08-10 | 温州海旭科技有限公司 | Plasma high efficiency etching machine |
| CN107622943A (en) * | 2017-10-13 | 2018-01-23 | 德淮半导体有限公司 | Semiconductor etching board |
| CN111508806B (en) * | 2020-04-17 | 2023-01-17 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber and semiconductor processing equipment |
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| JP4592856B2 (en) * | 1999-12-24 | 2010-12-08 | 東京エレクトロン株式会社 | Baffle plate and gas treatment device |
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| CN1518073A (en) * | 2003-01-07 | 2004-08-04 | 东京毅力科创株式会社 | Plasma processing device and focusing ring |
| CN1842244A (en) * | 2005-03-31 | 2006-10-04 | 东京毅力科创株式会社 | Plasma processing apparatus |
| CN101207003A (en) * | 2006-12-22 | 2008-06-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inner lining of wafer processing chamber and wafer processing chamber containing said inner lining |
| CN101960568A (en) * | 2008-02-28 | 2011-01-26 | 应用材料公司 | Be suitable for use in the air-flow balancing disk in the substrate processing chambers |
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