KR20120079962A - Substrate treatment equipment - Google Patents

Abstract

PURPOSE: A substrate processing apparatus and an operation method thereof are provided to effectively wash the inside of a chamber by spraying cleaning gas to a peripheral portion within the chamber. CONSTITUTION: A chamber(100) forms a substrate processing space in inside. A susceptor(300) supports a substrate within the chamber. A first gas injector(210) sprays first gas to a central portion of the substrate processing space. A second gas injector(220) sprays second gas to a peripheral portion of the substrate processing space. A first gas supply flow path(502) provides the first gas to the first gas injector. A second gas supply flow path(602) provides the second gas to the second gas injector. A first valve selects a gas source entered in the first gas supply flow path. A second valve selects a gas source entered in the second gas supply flow path.

Description

Substrate treatment apparatus and operation method thereof

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for performing substrate processing and a substrate processing method, and more particularly, to a substrate processing apparatus for efficiently cleaning the inside of a chamber and stably performing substrate processing, and an operation method thereof.

With the development of next-generation semiconductors, micro electro mechanical systems (MEMS) and nanodevice technologies, the formation of ultra-fine patterns, precise process control, and processing of large-diameter substrates have become important challenges. Accordingly, the specific gravity of the plasma process is increasing, and a large area of high density plasma formation and control technology is essential.

1 is a view showing a plasma processing apparatus according to the prior art.

The plasma processing apparatus includes one gas supply pipe 500 for supplying gas to the chamber 100 and a flow controller 102 for controlling the flow rate of the gas provided in the gas supply pipe 101 and supplied to the chamber 100. A mass flow controller (200) and a gas injector (200) which receives the gas from the gas supply pipe (101) and injects the gas into the chamber (100).

In the plasma processing apparatus having the component, the substrate S is positioned between the upper electrode implemented in the gas injector 200 and the lower electrode provided in the susceptor 300, and the upper electrode is applied by applying high frequency power to the upper electrode. By forming an electric field between the lower electrode and the lower electrode, the reaction gas is converted into plasma to perform a plasma treatment process. In the plasma, there are a large number of active species such as radicals and ions activated by a high frequency electric field.

However, the conventional plasma processing apparatus has a problem in that the chamber inner wall cannot be effectively cleaned because the process gas and the cleaning gas are injected through the gas injection unit through only one gas supply pipe.

Specifically, in the plasma treatment process, most of the active process gas contributes to the substrate treatment, but some diffuse out of the plasma reaction space into the chamber and the like. Active species diffused into the chamber inner walls etch the inside of the chamber, thereby exposing the metal inside the chamber to generate arcing. In addition, by-products such as polymers generated during the etching process may not be completely exhausted through the exhaust port, but may be deposited inside the chamber. Etching and deposition of the inner wall of the chamber, in turn, greatly changes the process parameters within the chamber during the process, thereby lowering process efficiency and causing contamination of the substrate. In order to prevent this, conventionally, by-products are not deposited inside the chamber by spraying the cleaning gas, but since the cleaning gas is injected through the shower head through only one gas supply pipe, the cleaning gas does not reach the inside of the chamber smoothly. have. In addition, there is a problem that the internal parts of the chamber are damaged by supplying excessive cleaning gas to the center of the chamber. As a result, there is a problem in that a separate cleaning gas line facing the inside of the chamber is not provided in the prior art, so that the deposits inside the chamber cannot be effectively cleaned, and the components inside the chamber are damaged.

An object of the present invention is to provide a substrate processing apparatus for efficiently cleaning the chamber inner wall. In addition, the technical problem of the present invention is to minimize damage inside the chamber. In addition, the technical problem of the present invention is to prevent excessive cleaning gas is injected into the center of the chamber. In addition, the technical problem of the present invention is to improve the plasma density.

Embodiments of the present invention include a chamber for forming a substrate processing space therein, a susceptor for supporting a substrate in the chamber, and a first gas disposed opposite to the susceptor and injecting a first gas into a central portion of the substrate processing space. And a second gas injection part having a jetting direction directed toward the chamber inner wall and injecting a second gas into an edge of the substrate processing space. A first gas supply passage for supplying a first gas to the first gas injection unit and a second gas supply passage for supplying a second gas to the second gas injection unit are included.

The second gas supply flow path has a flow path inclined downward from the center to the edge, the first gas is at least one of a process gas or a cleaning gas, and the second gas is at least one of a process gas or a cleaning gas. .

The first gas injection unit includes a plurality of injection holes vertically penetrated, and the second gas injection unit includes a ring assembly having a coupling gap between rings in which a plurality of rings having different diameters are combined to overlap each other.

Embodiments of the present invention provide a preparation process for preparing a substrate in a substrate processing space of a chamber, and a second gas having a directionality injected toward a first gas injector or a chamber inner wall injected toward the center of the substrate processing space. A process of injecting a process gas into the substrate processing space through at least one of the spraying unit, and taking out the substrate after the substrate processing process to the outside of the chamber, and cleaning gas toward the chamber inner wall through the second gas spraying unit. And a cleaning process for spraying.

According to the embodiment of the present invention, the inside of the chamber can be efficiently cleaned by flowing the cleaning gas into the edge region of the chamber. Further, according to the embodiment of the present invention, damage inside the chamber can be minimized. In addition, according to the embodiment of the present invention, since excessive cleaning gas is not injected into the center of the chamber, stable substrate processing can be performed. In addition, according to embodiments of the present invention, plasma density may be improved due to the insulator characteristics of the ring assembly. Further, in the embodiment of the present invention, the cleaning gas can be injected only toward the chamber edge when the cleaning inside the chamber is performed, so that only a small amount of cleaning gas can be consumed. Moreover, embodiment of this invention can control flow of a process gas finely in the center and the edge, and can consume gas efficiently.

1 is a view showing a plasma processing apparatus according to the prior art.
2 is a cross-sectional view of a plasma processing apparatus according to an embodiment of the present invention.
3 is a view illustrating a gas supply pipe having a horizontal flow path in a chamber lid according to an embodiment of the present invention.
4 is a view showing a perspective view of the ring assembly when implementing the second gas injection unit in the ring assembly according to an embodiment of the present invention.
5 is a view showing an example of coupling the connection bar of the ring assembly according to an embodiment of the present invention.
Figure 6 is a view showing another coupling example of the connection bar of the ring assembly according to an embodiment of the present invention.
7 illustrates a cross-sectional view of a ring assembly in accordance with an embodiment of the present invention.

Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention in more detail. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the embodiments are intended to complete the disclosure of the present invention and to those skilled in the art to fully understand the scope of the invention. It is provided to inform you. Wherein like reference numerals refer to like elements throughout.

2 is a cross-sectional view of a plasma processing apparatus according to an embodiment of the present invention.

Hereinafter, an embodiment of the present invention will be described by taking a plasma processing apparatus as an example of a substrate processing apparatus, but it will be apparent that the present invention can be applied to various substrate processing apparatuses without being limited to the plasma processing apparatus.

A plasma processing apparatus which is an example of a substrate processing apparatus according to an embodiment of the present invention includes a chamber 100 in which plasma processing is performed in a substrate processing space, a susceptor 300 supporting a substrate in the chamber, and the substrate processing. A first gas injector 210 for injecting the first gas into the center of the space and a second gas injector for injecting the second gas into an edge of the substrate processing space having a spraying direction directed toward the chamber sidewall ( 220).

In addition, gas sources 710 and 720 in the first gas supply passage 502 and the first gas supply passage 502 embedded in the chamber lid 120 to supply the first gas to the first gas injection unit 210. It comprises a first gas supply means 500 including a first gas supply pipe 501 connecting the. Similarly, gas sources 710 and 720 in the second gas supply passage 602 embedded in the chamber lid 120 and the first gas supply passage 602 to supply the second gas to the second gas injector 220. It is provided with a second gas supply means 600 including a second gas supply pipe 601 connecting the.

In addition, a pressure maintaining part for maintaining a constant pressure in the chamber 100, and an exhaust part 800 for exhausting by-products and unreacted substances in the chamber 100. In addition, although not shown, it includes a power supply disposed outside the chamber 100 to supply power to the heating element of the susceptor 300.

The chamber 100 is manufactured in the shape of a cylinder having an inner space. The shape of the chamber 100 is not limited to a cylindrical shape and may have various shapes. The chamber 100 may be manufactured to be separated into the chamber body 110 and the chamber lid 120 which is a chamber cover. Through this, it is possible to maintain the chamber 100 and the devices installed in the chamber 100. That is, a separate chamber lead may be placed on the first gas injector 210 and the second gas injector 220 to open and maintain the apparatus installed inside the chamber. Alternatively, as shown in FIG. 2, the chamber lead 120 and the gas injector 200 are integrated by embedding the first gas injector 210 and the second gas injector 220 in the chamber lid 120. It can be implemented as a structure.

In addition, a first gas supply passage 502 and a second gas supply passage 602 are embedded in the chamber lid 120 so that the first and second gases provided from the first and second gas supply pipes 501 and 601 are first. It is provided to the second gas injection unit (210, 220). In addition, the chamber lid 120 and the chamber body 110 are sealed 105, such as a sealant, to maintain the vacuum inside the chamber.

One side of the chamber 100 is provided with a substrate entrance (not shown), which is an entrance to and from the substrate S, and is provided with separate opening and closing means, for example, a gate valve and a slot valve, for opening and closing the substrate entrance and exit. In addition, an exhaust passage is formed on the bottom surface of the chamber 100, and an exhaust passage is formed at the periphery of the shaft 400 supporting the susceptor 300 to exhaust the gas to the outside of the chamber. In addition, the exhaust passage is connected to the exhaust pump 800 to perform chamber exhaust pumping. In addition, the shaft 400 penetrates through the exhaust passage, and a sealing means such as a bellows 401 is provided around the lower end of the shaft to maintain the vacuum inside the chamber.

A baffle 106 is formed between the outer diameter surface of the shaft 400 and the inner surface of the exhaust passage. The baffle 106 allows a uniform flow of the gas exhausted through the exhaust passage.

On the other hand, the exhaust passage is provided in the lower portion of the chamber may be of a lower exhaust structure, as another embodiment of the present invention may be implemented as a side wall exhaust structure is provided with the exhaust passage in the chamber side wall.

The susceptor 300 is a substrate support plate for supporting and heating the substrate. Is connected to the lower portion of the susceptor 300 has a shaft 400 for supporting the susceptor to move up and down. An RF electrode plate is buried in the susceptor 300 on which the substrate is placed to provide a potential for heating the susceptor 300 or forming a plasma in the chamber 100. In addition, the susceptor 300 may include a heating element implemented by a heater or the like, and by heating the susceptor 300 using the heating element, the susceptor 300 may be seated on the susceptor 300. The substrate S can be heated to a constant temperature.

On the other hand, the susceptor 300 is provided with a plurality of lift pins (not shown) penetrating the susceptor 300. When the substrate enters the chamber through the substrate entrance (not shown), the lift pin located on the susceptor top surface rests on the surface facing the susceptor to seat the substrate, and conversely, the lift pin also rises when the susceptor rises for processing. Thereby separating the substrate from the upper surface of the susceptor. After the process is completed, the susceptor is lowered and the lift pins are lowered so that the substrate is placed on the susceptor upper surface when the substrate is taken out to the outside through the substrate entrance (not shown).

The driving unit (not shown) is connected to the shaft 400 protruding out of the chamber 100 to provide up / down and rotational power to the shaft 400.

The process gas which is a substrate processing raw material and the cleaning gas which is a cleaning raw material are injected into the substrate processing space through the gas injection unit 200. The gas injector 200 according to the exemplary embodiment of the present invention has a first gas injector 210 for injecting a first gas into the center of the substrate processing space and an injection direction for directing the chamber inner wall. A second gas injection unit 220 for injecting a second gas to the edge of the processing space. In addition, the first gas supply passage 502 for supplying the first gas to the first gas injection unit 210 and the second gas supply passage 602 for supplying the second gas to the second gas injection unit 220 are provided. Include.

The first gas supply passage 502 and the second gas supply passage 602 may be implemented in the form of a circular tube, and in some cases, may be implemented in the form of a polygonal tube, such as in various embodiments Could be implemented.

The first gas supply flow path 502 is a flow path tube that supplies the first gas to the first gas injection part 210 that injects the first gas into the center of the substrate processing space. The first gas supply passage 502 is vertically buried in the chamber lid 120 to transfer the first gas supplied from the gas source sources 710 and 720 to the first gas injection unit 210. The first gas supply passage 502 may be a single number, and may also supply gas to the first gas injection unit 210 as a plurality of first gas supply passages.

The second gas supply flow path 602 is a flow path tube that supplies the second gas to the second gas injection part 220 that injects the second gas toward the edge of the substrate processing space. The second gas supply passage 602 positioned in the chamber lid 120, which is the chamber lid 120, is embedded in the inclined direction in the chamber lid 120 to provide the second gas to the second gas injection unit 220. do. That is, it has a flow path inclined downward toward the edge at the center of the chamber lid 120, the end of the second gas supply flow path 602 is connected to the second gas injection unit 220. A second gas injection unit 220 having a ring assembly is inserted into and connected to an end of the second gas supply passage 602. In addition, the second gas supply pipe and the ring assembly may be connected in various ways, such as bolt fastening, integration with the second gas supply pipe, and the second gas injection unit.

The first gas supplied through the first gas supply flow path 502 may correspond to a cleaning gas for cleaning impurities attached to the inner wall of the chamber or a process gas used for substrate processing (etching, deposition, etc.). The process gas or the cleaning gas is injected into the center of the substrate processing space through the first gas injector 210, thereby processing the substrate by the process gas in the center of the chamber, and after the substrate processing is completed, the cleaning process in the chamber center is performed. Can be done.

The second gas supplied to the second gas supply passage 602 may be a cleaning gas or a process gas, which is preferably a cleaning gas. The second gas supply passage 602 may inject the cleaning gas through the second gas injector 220, which injects to the edge of the substrate processing space, to reach the cleaning gas directly on the inner wall of the chamber. Even when the first gas reaching the center of the substrate processing space is implemented as the cleaning gas, since the cleaning gas does not reach the edge of the substrate processing space sufficiently, the second gas injection unit 220 connected to the second gas supply passage 220. ), The cleaning gas is injected directly to the edge of the substrate processing space.

When the first gas supply passage 502 and the second gas supply passage 602 are separately implemented as described above, various controls may be performed in the substrate processing process and the cleaning process.

For example, the process gas may be provided only to the first gas supply flow path 502 during the substrate processing process, or process gas may be provided to both the first and second gas supply flow paths 502 and 602. When providing the process gas in both flow paths, by providing more process gas in the 1st gas supply flow path 502 toward the center of a substrate processing space, efficient substrate processing can be performed as a minimum process gas.

Similarly, in the cleaning process, the cleaning gas may be provided only in the second gas supply flow path 602, or the cleaning gas may be provided in both the first and second gas supply flow paths 502 and 602. When the cleaning gas is provided in both flow paths, by providing more cleaning gas to the second gas supply flow path 602 facing the edge of the substrate processing space, an efficient cleaning process can be performed as the minimum cleaning gas.

Meanwhile, the first gas supply passage 502 and the second gas supply passage 602 receive gas from a plurality of gas source sources 710 and 720. For this purpose, the first gas supply passage 501 and the second gas supply passage ( 601, a first valve 503, and a second valve 603, respectively. The first gas supply pipe 501 is a flow path pipe outside the chamber connecting the gas source source and the first gas supply flow path 502, and the second gas supply pipe 601 is a gas source source and the second gas supply flow path 602. ) Is a flow pipe outside the chamber connecting the.

In addition, the first valve 503 selects which of the gases supplied from the plurality of gas source sources 710 and 720 to the first gas supply pipe 501. For example, when only the process gas is to be supplied to the first gas supply pipe 501, the first valve 503 opens a passage from the process gas source source 720, while the cleaning gas source source 710 is opened. Block the passage from If the process gas and the cleaning gas are to be simultaneously supplied to the first gas supply pipe 501, the first valve 503 opens the passages of the process gas source source 720 and the cleaning gas source source 710. 1 to be connected to the gas supply pipe (501).

Similarly, the second valve 603 also selects which gas is supplied to the second gas supply pipe 601 from the gas supplied from the plurality of gas source sources. For reference, although not shown, each gas supply pipe is provided with a mass flow controller (MFC) for controlling the flow rate of the gas supplied to the chamber. The valve may include the function of a flow controller.

In addition, although the cleaning gas source source 710 is illustrated as being directly connected to the gas supply pipes 501 and 601 in FIG. 2, this is illustrated for convenience of description. In practice, the cleaning gas may be supplied from the cleaning gas source spaced apart from the valve to be plasma-excited and activated through a separate electrode to be provided to each gas supply means 500 and 600.

On the other hand, the second gas supply flow path 602 has a flow path inclined downward from the center toward the edge as shown in Figure 2, but is not limited to this, as shown in the 'b' shape as shown in FIG. It may have a structure having a horizontal flow path and a vertical flow path. Even if it has such a structure, since the 2nd gas injection part inclines toward the chamber inner wall, it does not matter that injection of a 2nd gas toward the chamber inner wall is performed.

The first gas injector 210 injects the first gas into the center of the substrate processing space. The first gas injection unit may be implemented as a shower head having a plurality of injection holes vertically penetrated, and may be implemented in various structures such as an injection nozzle in addition to the shower head. When the first gas injection unit 210 is implemented as a shower head, the shower head may implement a function of an upper electrode that excites plasma in addition to a gas injection function. The first gas injector 210 injects the first gas into the center of the substrate processing space, thereby performing substrate treatment such as deposition or etching on the substrate S placed on the susceptor 300. At this time, the gas injected into the substrate processing space is plasma excited to perform substrate processing. Before the injection of the first gas injection unit 210 is provided with a first gas region, the first gas is vortexed evenly before the injection through the first gas injection unit 210 is evenly distributed throughout the substrate first gas To be sprayed. For reference, a baffle (not shown) may be additionally provided in the first gas region, and may be evenly sprayed through a plurality of injection holes of the first gas injector 210 positioned below the baffle.

The second gas injector 220 injects the second gas to the edge of the substrate processing space. For this purpose, the second gas injector 220 has an injection direction directed toward the sidewall of the chamber. By injecting the second gas of the cleaning gas into the edge of the substrate processing space, it is possible to prevent the deposition of impurities on the inner wall of the chamber. The second gas injection unit 200 has a jetting direction to face the chamber inner wall, for this purpose to have a coupling gap between the ring coupled to overlap a plurality of rings of different diameters.

That is, the diameters of the rings that overlap each other are different, so that the outer ring has a larger diameter on the outside of the smaller inner ring, and the coupling gap is formed between the inner ring and the outer ring so that the second gas is slit-shaped. It is sprayed from the upper side to the lower side along the coupling gap.

For example, Figure 4 is a view showing a perspective view of the ring assembly when implementing the second gas injection unit in the ring assembly according to an embodiment of the present invention, the diameter size of the ring assembly 221 is the first ring <second ring <Assuming that the third ring has a sequence, the second ring is superimposed on the outer wall of the first ring 221a having the smallest diameter, and the third ring 221c is superimposed on the outer wall of the second ring 221b. It has a structure, between the rings are coupled by a plurality of connecting bars 222 to form a coupling gap by the length of the connecting bar is a slit structure.

As described above, the coupling between the rings is coupled by the connecting bar 222, examples of which may be combined in various ways. FIG. 5 is a diagram illustrating an example of coupling of a connecting bar. FIG. 5 (a) is a view from above. FIG. 5 (b) is a cross-sectional view. 221a and the second ring 221b, which are outer rings, are provided with connecting bars, and the connecting bar 222a of the first ring 221a is connected to the locking fastener 223a, which is a connecting bar of the second ring body. Can be implemented.

In addition, as shown in Figure 6 is not provided with a connecting bar of the inner ring is provided only the locking fasteners that are the connection bar of the outer ring is the locking fastener of the outer ring acts as a connecting bar, the locking fastening on the upper surface of the body of the inner ring It may have a structure.

As the inner ring and the outer ring are coupled by the connecting bar as described above, the inner ring and the outer ring have a coupling gap equal to the length of the connection bar, and the second gas may be injected by the coupling gap.

By implementing a different length of the connection bar 222 provided for each ring, the gap between the coupling gap, that is, the distance between the rings can be implemented differently. In addition, the coupling gap of the ring assembly is implemented in the direction in which the inclination of the vertical cross-section toward the chamber inner wall. 7 is a cross-sectional view of the ring assembly, in which the inclination of the first_2 coupling gap A formed by the first ring 221a and the second ring 221b and the second ring 221b and the third ring are shown. The vertical cross section of the 2_3 coupling gap B formed by 221c is inclined toward the chamber inner wall, and the vertical cross-sectional slope of these 1_2 coupling gap A and the 2_3 coupling gap B is also inclined. It can be seen that is implemented differently.

On the other hand, the material of the ring assembly 221 is implemented with an insulator such as ceramic. This is because by implementing the ring assembly located at the edge of the chamber with an insulator, the plasma density can be improved by concentrating the plasma excited in the substrate processing space located at the center of the chamber to the center of the chamber.

8 is a flowchart illustrating a substrate processing process according to an embodiment of the present invention.

A process of preparing a substrate in a substrate processing space of a chamber is performed (S81). After the substrate is transferred into the chamber through the substrate entrance and mounted on the susceptor, the susceptor is raised and placed in the substrate processing space.

When the substrate is located in the substrate processing space, the process gas is injected (S82). At this time, the process gas is injected into the center of the substrate processing space through the first gas injection unit. In this case, the process gas may be injected together toward the edge of the substrate processing space, that is, the chamber inner wall, through a separate second gas injector in addition to the first gas injector. The second gas injector has a direction jetting property to face the chamber inner wall, and the process gas injected through the second gas injector faces the chamber inner wall.

When the process gas is injected together through the second gas injector in addition to the first gas injector as described above, the amount of the process gas injected through the first gas injector is greater than the amount of gas injected through the second gas injector. This is to inject more process gas toward the center of the substrate so that the substrate processing can be performed efficiently.

The process gas injection process is continued until the substrate processing is completed (S83).

After the substrate processing is completed and the substrate is discharged to the outside of the chamber, it is determined whether cleaning to the inside of the chamber is necessary (S84). For example, it is determined that the inside of the chamber needs to be cleaned when the substrate processing in the chamber is performed at a threshold value (for example, 10 times or more).

When it is determined that the chamber cleaning is necessary, the cleaning gas is injected through the second gas injector having the direction toward the chamber inner wall (S85). In this case, the process gas may be injected together to the center of the substrate processing space through the first gas injection unit facing the center of the chamber in addition to the second gas injection unit.

As described above, when the cleaning gas is injected together through the first gas injector toward the center in addition to the second gas injector toward the chamber inner wall, the amount of the cleaning gas injected through the second gas injector is controlled through the first gas injector. More than the amount of cleaning gas injected. This is to spray more cleaning gas toward the edge of the substrate processing space, that is, the chamber inner wall, so as to efficiently clean the chamber inner wall, the chamber bottom and the susceptor lower surface with a small amount of cleaning gas.

Although the present invention has been described with reference to the accompanying drawings and the preferred embodiments described above, the present invention is not limited thereto but is limited by the following claims. Accordingly, those skilled in the art will appreciate that various modifications and changes may be made thereto without departing from the spirit of the following claims.

100: chamber 110: chamber body
120: chamber lid 200: gas injection unit
210: first gas injection unit 220: second gas injection unit
221: ring assembly 222: connecting bar
300: susceptor 400: shaft
500: first gas supply means 600: second gas supply means
710: cleaning gas source source 720: process gas source source

Claims (15)

A chamber forming a substrate processing space therein;
A susceptor for supporting a substrate in the chamber;
A first gas injector disposed opposite the susceptor and configured to inject a first gas into a central portion of the substrate processing space;
A second gas injector having an injection direction directed toward the inner wall of the chamber and injecting a second gas into an edge of the substrate processing space;
Substrate processing apparatus comprising a. The method according to claim 1,
A first gas supply passage configured to supply a first gas to the first gas injector;
A second gas supply passage configured to supply a second gas to the second gas injection unit;
Substrate processing apparatus comprising a. The method according to claim 2,
A first valve for selecting a gas source source flowing into the first gas supply passage;
A second valve for selecting a gas source source flowing into the second gas supply passage;
Substrate processing apparatus comprising a. The substrate processing apparatus of claim 2, wherein the second gas supply passage has a passage inclined downward from the center toward the edge. The substrate processing apparatus of claim 1, wherein the first gas is at least one of a process gas and a cleaning gas, and the second gas is at least one of a process gas and a cleaning gas. The substrate processing apparatus of claim 1, wherein the first gas injection unit has a plurality of injection holes vertically penetrated. The substrate processing apparatus of claim 1 or 2, wherein the second gas injection unit is formed of a ring assembly having a coupling gap between rings in which a plurality of rings having different diameters are combined to overlap each other. The substrate processing apparatus of claim 7, wherein the ring assembly couples the outer wall of the inner ring and the inner wall of the outer ring, which are coupled to each other, as a plurality of connecting bars. The substrate processing apparatus of claim 7, wherein the ring assembly is an insulator material. The substrate processing apparatus of claim 7, wherein the coupling gap is inclined in a direction in which a vertical cross section is inclined toward the chamber inner wall. The substrate processing apparatus of claim 7, wherein a diameter of the coupling gap is different in each coupling gap. Preparing a substrate in a substrate processing space of the chamber;
Process of injecting process gas into the substrate processing space through at least one of the first gas injection unit to be injected toward the center of the substrate processing space or the second gas injection unit having a direction directed toward the inner wall of the chamber ;
Substrate processing step A cleaning process of ejecting the completed substrate to the outside of the chamber, and then spraying the cleaning gas toward the chamber inner wall through the second gas injector;
Substrate processing method comprising a. The method of claim 12, wherein in the process, when the process gas is injected through the first gas injector and the second gas injector, the amount of process gas injected through the first gas injector is equal to the second gas injector. A substrate processing method characterized in that more than the amount of process gas injected through. The substrate treating method of claim 12, wherein, in the cleaning process, the cleaning gas is injected through the first gas injection unit in addition to the second gas injection unit. The method of claim 14, wherein an amount of the cleaning gas injected through the second gas injector is greater than an amount of the cleaning gas injected through the first gas injector.

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