KR102046084B1 - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

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Publication number
KR102046084B1
KR102046084B1 KR1020150058313A KR20150058313A KR102046084B1 KR 102046084 B1 KR102046084 B1 KR 102046084B1 KR 1020150058313 A KR1020150058313 A KR 1020150058313A KR 20150058313 A KR20150058313 A KR 20150058313A KR 102046084 B1 KR102046084 B1 KR 102046084B1
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South Korea
Prior art keywords
flow path
gas
path forming
top plate
plate
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KR1020150058313A
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Korean (ko)
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KR20160127294A (en
Inventor
박해윤
황석훈
엄용택
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주식회사 원익아이피에스
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Publication of KR20160127294A publication Critical patent/KR20160127294A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus for performing a substrate treatment such as etching, deposition on a substrate.
The present invention, the chamber body is opened on the upper side; A chamber main body installed in the opening of the chamber main body and having a closed shape in the processing space; A substrate support part installed on the chamber body to support a substrate; A top plate installed in the opening of the chamber body to form a closed processing space; A diffusion plate disposed below the top plate to diffuse the process gas; An injection plate disposed below the diffusion plate to inject the process gas diffused by the diffusion plate into the processing space; A gas flow path forming unit installed between the top plate and the diffusion plate to induce a gas supplied from a center portion of the top plate to the edge of the diffusion plate and then inject gas between the diffusion plate and the injection plate A substrate processing apparatus is disclosed.

Description

Substrate processing apparatus

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus for performing a substrate treatment such as etching, deposition on a substrate.

The substrate treating apparatus refers to an apparatus for performing substrate treatment such as etching or vapor deposition on a substrate.

The substrate treating apparatus may be configured in various ways according to a substrate treating process. For example, the substrate treating apparatus may include a process chamber for forming a closed process space, and a shower installed at an upper side of the process chamber to supply gas for substrate processing in the process space. And a head support portion and a substrate support portion provided in the process chamber to support the substrate to be processed.

The substrate processing apparatus having the above configuration performs a substrate processing process by forming a plasma in the processing space by an electromagnetic field together with supply of gas.

The substrate treating apparatus may be subjected to a cleaning process of removing particles after performing a predetermined number of substrate treating processes.

Here, the cleaning process may be performed by various methods. For example, the cleaning process may be performed on the shower head and the inside of the process chamber by supplying the cleaning gas to the shower head in a dissociated state by using a remote plasma. have.

However, when the cleaning gas is supplied to the shower head part in a dissociated state by using the remote plasma as described above, there is a problem in that the cleaning inside the shower head part is not smoothly performed according to the supply structure.

An object of the present invention is to provide a substrate processing apparatus that can maximize the process efficiency by minimizing the rectangular area of the gas supply when the gas supply to enable a uniform gas supply in order to solve the above problems.

The present invention was created in order to achieve the object of the present invention as described above, the present invention, the chamber body is opened on the upper side; A chamber main body installed at an opening of the chamber main body and having a closed processing space in a shape thereof; A substrate support part installed on the chamber body to support a substrate; A top plate installed in the opening of the chamber body to form a closed processing space; A diffusion plate disposed below the top plate to diffuse the process gas; An injection plate disposed below the diffusion plate to inject the process gas diffused by the diffusion plate into the processing space; A gas flow path forming unit installed between the top plate and the diffusion plate to induce a gas supplied from a center portion of the top plate to the edge of the diffusion plate and then inject gas between the diffusion plate and the injection plate A substrate processing apparatus is disclosed.

The gas flow path forming unit is coupled to a bottom surface of the top plate and receives a gas from a central portion of the top plate, and is coupled to a bottom surface of the top plate and is connected to an edge of the diffusion plate from the center flow path forming unit. Coupled to each branch flow path forming portion at the edge of the diffusion plate to inject gas between the diffusion plate and the injection plate through a plurality of branch flow path forming parts for inducing gas and a first communication hole formed in the diffusion plate. It may include a plurality of first gas connecting pipes.

The plurality of branches may be coupled to the bottom surface of the top plate to correspond to the through holes formed through the top plate and to transfer the gas supplied through the through holes to each of the plurality of branch flow channel forming parts. And a central flow path forming member corresponding to each of the flow path forming parts, in which a plurality of flow path connecting parts are formed, wherein the branch flow path forming part is coupled to each of the plurality of flow path connecting parts and coupled to a bottom surface of the top plate, and is vertical in the longitudinal direction. The cross section may include a flow path forming member having a 'U' shape.

The central flow path forming unit is coupled to the bottom surface of the top plate and supplied through the through hole to cover the center flow path formed in the bottom of the top plate to correspond to the through hole formed through the top plate. And a central flow path forming member for transmitting to each of the plurality of branch flow path forming parts, wherein the central flow path forming groove has a plurality of flow path connecting parts corresponding to each of the plurality of branch flow path forming parts. At least one cover connected to each of the plurality of flow path connecting portions and coupled to the bottom surface of the top plate to cover a plurality of branch flow path forming grooves having a vertical vertical cross section formed in a 'U' shape on a bottom surface of the top plate; It may include a member.

The plurality of first gas connection pipes may be installed so that the moving distance of the gas from the through hole to each of the first communication holes is the same.

The plurality of branch flow channel forming parts may be coupled to two or more sub branch flow channel forming parts to branch into two or more sub branch flow paths at an end thereof, and the first gas connecting pipe may be coupled to each of the sub branch flow channel forming parts. Can be.

The diffusion plate corresponds to the central flow path forming part, and a plurality of second communication holes are formed, and the gas flow path forming part injects gas between the diffusion plate and the injection plate through the second communication hole formed in the diffusion plate. It may include a plurality of second gas connecting pipes connecting the central flow path forming portion and the second communication hole.

The top plate may have a rectangular planar shape, and the plurality of branch flow path forming parts may be provided at eight points corresponding to the center of the vertex and the side along the edge of the rectangle.

In the substrate treating apparatus according to the present invention, a gas flow path for injecting gas into an injection plate by inducing gas from the shower head having the top plate, the diffusion plate, and the diffusion plate sequentially disposed between the top plate and the diffusion plate to the edge of the diffusion plate. By further including the forming unit, the gas is smoothly injected to the edge of the injection plate, in particular, the injection plate is possible to uniformly spray the gas there is an advantage that can effectively perform the substrate treatment.

In particular, the substrate processing apparatus according to the present invention, a gas for injecting the gas to the injection plate to guide the gas from the shower head having the top plate, the diffusion plate and the diffusion plate sequentially arranged between the top plate and the diffusion plate to the edge of the diffusion plate By additionally including a flow path forming unit, the gas is induced to the edge of the diffusion plate to enable uniform gas supply to the edge portion that is vulnerable to uniformity, and thus there is an advantage that the substrate processing can be performed uniformly.

Furthermore, the substrate treating apparatus according to the present invention has the advantage that the cleaning gas dissociated by the remote plasma can be smoothly sprayed to the edge of the spraying plate in the dissociated state to effectively clean the diffusion plate and the chamber body. have.

In addition, in the substrate treating apparatus according to the present invention, the cleaning gas dissociated by the remote plasma is smoothly sprayed to the edge of the injection plate in the dissociated state to increase the cleaning efficiency and the cleaning time by effectively performing the cleaning to the edge of the diffusion plate. By reducing the overall process time has the advantage that can maximize the process efficiency.

1 is a cross-sectional view showing a substrate processing apparatus according to the present invention.
FIG. 2 is a bottom view illustrating a bottom surface of a top plate in the substrate processing apparatus of FIG. 1.
3 is a cross-sectional view showing a substrate processing apparatus having a deformed cleaning gas flow forming unit as the substrate processing apparatus according to the present invention.
4 is a bottom view illustrating the bottom of the top plate in the substrate processing apparatus of FIG. 3.

Hereinafter, a substrate processing apparatus according to the present invention will be described with reference to the accompanying drawings. 1 is a sectional view taken along the line I-I in FIG. 2, and FIG. 3 is a sectional view taken along the IV-IV direction in FIG.

Substrate processing apparatus according to the present invention, as shown in Figures 1 to 4, the chamber body 110 is opened on the upper side; A substrate support 130 installed in the chamber body 110 to support the substrate 10; A top plate 120 installed in the opening of the chamber body 110 to form a closed processing space S; A diffusion plate 210 installed below the top plate 120 to diffuse the process gas; An injection plate 220 installed below the diffusion plate 210 to inject the process gas diffused by the diffusion plate into the processing space S; Installed between the top plate 120 and the diffusion plate 210 to guide the gas supplied from the central portion of the top plate 120 to the edge of the diffusion plate 210 to the diffusion plate 210 and the injection plate It includes a gas flow path forming unit 300 for injecting gas between the (220).

The chamber body 110, the upper side is opened to form a closed processing space (S) for performing the substrate processing process by the combination of the top plate 120, etc. can be configured in various ways.

In addition, the chamber body 110, at least one gate 111 for the introduction and discharge of the substrate 10 is formed.

On the other hand, the chamber body 110 is connected to the exhaust system for maintaining and evacuating the vacuum pressure inside the processing space (S), and various types of power may be applied to form the plasma.

As an example of the power supply method, a configuration except for the substrate support 130 described later, that is, the chamber body 120, the top plate 120, and the like may be grounded, and the substrate support 130 may be applied with one or more RF power sources. .

The substrate support part 130 is provided in the chamber body 110 to support the substrate 10 and may have various configurations.

For example, the substrate support 130 may be fixedly installed in the chamber body 110 or installed to move up and down with respect to the chamber body 110.

In addition, the substrate support 130 may be configured in various ways such that an electrostatic chuck (not shown) for fixing and fixing the substrate 10 and a heater for heating the substrate 10 may be installed.

In addition, the substrate support 130 may be provided with a plurality of lift pins for raising and lowering the substrate 10 by raising and lowering the introduction and discharge of the substrate 10.

The top plate 120 is installed in the opening of the chamber body 110 to form a processing space (S) sealed together with the chamber body 110, various configurations are possible.

On the other hand, the top plate 120 has a shape corresponding to the shape of the substrate 10 to be subjected to the substrate treatment, and as shown in FIGS. 1 and 2, when the rectangular substrate 10 is to be treated, the top plate 120 is rectangular. It may have a shape.

In addition, the top plate 120 is formed through the through-hole 121 for supplying gas to the gas flow path forming unit 300 to be described later in the center portion.

The through hole 121 is a configuration in which a reactive gas such as a cleaning gas is introduced, and the cleaning gas dissociated through the supply of gas, in particular, a remote plasma generator 350 may be stably introduced. Any structure is possible as long as it is present.

The diffusion plate 210 is installed below the top plate 120 to diffuse the process gas, and various configurations are possible.

For example, the diffusion plate 210 may be disposed at a distance from the bottom of the top plate 120 to form a first communication space DS through which the process gas is diffused, and in the first communication space DS. An appropriate number of diffusion holes 218 may be formed so that the diffused process gas may be injected into the injection space IS formed by the diffusion plate 210 and the injection plate 220.

Here, the top plate 120, as shown in FIG. 1 or 3, the second gas supply hole 129 at a plurality of points in order to supply the second gas to the first communication space (DS) up and down It can be penetrated in the direction.

The second gas supply hole 129 is formed by penetrating the top plate 120 up and down at a number and a position suitable for a position not interfering with the gas flow path forming unit 300 to be described later on the bottom of the top plate 120. Can be.

The injection plate 220 is provided at intervals below the diffusion plate 210 and is configured to inject a process gas diffused by the diffusion plate 210 into the processing space (S).

For example, the injection plate 220 is formed with a plurality of injection holes 229 for injecting the gas injected from the first communication space (DS) through the second gas supply hole 129 into the processing space (S). Can be.

The gas flow path forming unit 300 is installed between the top plate 120 and the diffusion plate 210 to guide the gas supplied from the central portion of the top plate 120 to the edge of the diffusion plate 210. After the diffusion plate 210 and the injection plate 220 as a configuration for injecting gas between the various configurations are possible.

For example, the gas flow path forming unit 300 may be coupled to the bottom surface of the top plate 120 to receive gas from a central portion of the top plate 120 and the top plate 120. A plurality of branch flow channel forming portions 320 coupled to a bottom surface of the center channel forming portion 310 to guide gas from the central flow forming portion 310 to the edge of the diffusion plate 210, and first communication holes 219 formed in the diffusion plate 210. A plurality of first gas connection pipes 330 coupled to each branch flow path forming unit 320 at the edge of the injection plate 220 to inject gas between the diffusion plate 210 and the injection plate 220 through the? can do.

Herein, when the gas is a cleaning gas, the injection plate 220 may be cleaned by the cleaning gas injected by the gas flow path forming unit 300 and the cleaning gas injected by the gas flow path forming unit 300 may process the processing space S. To spray.

The central flow path forming unit 310 is coupled to the bottom of the top plate 120 to receive gas from the center portion of the top plate 120, and thus may be variously configured according to the formation of the flow path.

In detail, the central flow path forming part 310 forms a flow path protruding from the bottom of the top plate 120, or forms a recess in the bottom of the top plate 120, and then forms a flow path by covering it with a separate member. Various configurations are possible.

More specifically, as an example, the central flow path forming part 310 corresponds to the through hole 121 formed through the top plate 120, as shown in FIGS. 1 and 2, and thus the top plate 120. The central channel forming member 311 may be coupled to a bottom surface of the central channel forming member 311 corresponding to each of the branch flow channel forming units 320.

The central flow path forming member 311 is coupled to the bottom surface of the top plate 120 and forms a plurality of branch flow paths so that the gas supplied through the through hole 121 is transferred to each of the plurality of branch flow path forming parts 320. Any configuration may be used as long as the plurality of flow path connectors 313 may be formed corresponding to each of the units 320.

As another example, the central flow path forming part 310 may correspond to the through hole 121 formed through the top plate 120 to form a central flow path forming groove 323 concave on the bottom of the top plate 121. It may include a central flow path forming member 311 is coupled to the bottom of the top plate 120 to cover.

The central flow path forming groove 323 is formed to be concave on the bottom surface of the top plate 121 to correspond to the through hole 121 formed through the top plate 120, and the central flow path shown in FIGS. 1 and 2. It may be formed corresponding to the shape of the forming part 310.

In addition, the central flow path forming grooves 323 are coupled to the bottom of the top plate 120 and are provided with a plurality of branch flow paths so that the gas supplied through the through holes 121 is transferred to each of the plurality of branch flow path forming parts 320. Each of the forming parts 320 may have a plurality of flow path connecting parts 313.

Meanwhile, the central flow path forming member 311 is coupled to protrude downward from the bottom of the top plate 120, or as shown in FIGS. 3 and 4, such that the bottom of the top plate 120 has a flat surface. It can be inserted into and combined.

In this case, a step 127 may be formed at the bottom of the top plate 120 to support the central flow path forming member 311.

On the other hand, the upper surface of the central flow path forming member 311, as shown in Figure 1 or 3, it is preferable that the protrusion 312 protruding upward from the position corresponding to the through hole 121 is installed.

In particular, the protrusion 312 may be sharply formed toward the through hole 121.

In addition, an inner circumferential surface of the through hole 121 may correspond to a shape of the protrusion 312, and an expansion part 123 may be formed to be parallel to the outer circumferential surface of the through hole 121.

As described above, when the protruding portion 312 is formed in the central flow path forming part 310, it prevents thermal deformation or heating destruction of the central flow path forming part 310 to smoothly induce the flow of cleaning gas while maintaining maintenance costs. You can save.

Meanwhile, as illustrated in FIG. 1 or 3, the maximum size D2 of the bottom of the protrusion 312 is larger than the inner diameter D1 of the through hole 121, and the largest outer diameter of the expansion part 123 is shown. It is more preferable that it is smaller than (D3).

The plurality of branch flow channel forming units 320 are coupled to the bottom of the top plate 120 to guide the gas from the central channel forming unit 310 to the edge of the diffusion plate 210. Depending on the spray distribution, the installation number and arrangement may be variously set.

In detail, the plurality of branch flow channel forming units 320 are coupled to the central flow channel forming unit 310 to form grooves on the bottom surface of the top plate 120 similarly to the central channel forming unit 310. Various configurations are possible, such as forming a flow path by covering with a separate member.

More specifically, as an example, the plurality of branch flow path forming parts 320 may be coupled to each of the plurality of flow path connecting parts 311 and may be disposed on the bottom surface of the top plate 120 as illustrated in FIGS. 1 and 2. Coupled and may include a branch flow path forming member 311 having a vertical section in the longitudinal direction of the 'U' shape.

In addition, the plurality of branch flow path forming units 320 may be formed of a pipe member forming a flow path by itself.

As another example, the plurality of branch flow channel forming units 320 may be formed to correspond to each of the plurality of branch flow channel forming sections 320 in the central channel forming groove 323, as illustrated in FIGS. 3 and 4. The top plate 120 is connected to each of the plurality of flow path connecting portions 313 and covers the plurality of branch flow path forming grooves 324 formed in a 'U' shape in a vertical cross section in the longitudinal direction on the bottom of the top plate 120. It may include one or more cover member 321 is coupled to the bottom of the.

The branch flow path forming groove 324 is formed to be concave on the bottom of the top plate 121 to correspond to the through hole 121 formed through the top plate 120, the branch flow path shown in Figs. It may be formed corresponding to the shape of the forming unit 320.

Meanwhile, the cover member 321 is protruded downward from the bottom of the top plate 120 to be coupled to each other, or as shown in FIGS. 3 and 4, the bottom surface of the top plate 120 is inserted inward to form a flat surface. Can be combined.

At this time, the bottom surface of the top plate 120, a step 127, the support member 321 is supported may be formed.

The plurality of first gas connection pipes 330, the injection plate 220 to inject gas between the diffusion plate 210 and the injection plate 220 through the first communication hole 219 formed in the diffusion plate 210. Various configurations are possible as the configuration is coupled to each branch flow path forming unit 320 at the edge of.

For example, the first gas connection pipe 330 may be formed of a pipe member connected to an end of each branch flow path forming unit 320 and a first communication hole 219 vertically penetrating through the diffusion plate 210. Can be.

At this time, the first injection hole 325 to which the first gas connecting pipe 330 is coupled is formed at the end of each branch flow path forming unit 320.

In addition, the plurality of first gas connection pipes 330 may be installed such that a moving distance of the gas from the through hole 121 to each of the first communication holes 219 is the same.

In addition, the central flow path forming unit 310 is connected to the second communication hole 217 by the second gas connecting pipe 340 so that the gas can be injected from the central portion of the gas diffusion plate 220 in the central portion. Can be sprayed on.

The second gas connection pipe 340 is configured to connect the central flow path forming unit 310 and the second communication hole 217 to inject gas between the diffusion plate 210 and the injection plate 220 in the central portion. It may be formed similarly to the first gas connection pipe (300).

The second communication hole 217 is a diffusion plate such that the gas delivered from the central flow path forming unit 310 by the second gas connection pipe 340 injects the gas between the diffusion plate 210 and the injection plate 220. With the configuration formed at 210, the number and position can be determined according to the injection and injection amount of the gas.

In this case, each of the central flow path forming units 310 has a second injection hole 326 to which the second gas connection pipe 340 is coupled.

On the other hand, the top plate 120, the planar shape is rectangular, a plurality of branch flow path forming portion 320 may be provided in eight corresponding to the center of the vertex and sides along the edge of the rectangle.

In addition, the gas, such as the cleaning gas supplied to the gas flow path forming unit 300, as shown in FIG. 1 or 3, the gas flow path forming unit 300 in a dissociated state through the remote plasma generator 250. ) May be injected.

As described above, the cleaning gas is dissociated while passing through the remote plasma 250 before being supplied to the gas flow path forming unit 300 and injected into the gas flow path forming unit 300 and the injection plate 220 so that the cleaning plate 220 may be discharged. The edges can be effectively cleaned without blinding.

The cleaning gas may be a cleaning gas such as NF 3 .

Since the above has been described only with respect to some of the preferred embodiments that can be implemented by the present invention, the scope of the present invention, as is well known, should not be construed as limited to the above embodiments, the present invention described above It will be said that both the technical idea and the technical idea which together with the base are included in the scope of the present invention.

110: chamber body 120: top plate
210: diffusion plate 220: injection plate
300: cleaning gas flow path forming unit
310: central channel forming unit 320: branch channel forming unit

Claims (8)

A chamber body whose upper side is opened;
A substrate support part installed on the chamber body to support a substrate;
A top plate installed in the opening of the chamber body to form a closed processing space;
A diffusion plate disposed below the top plate to diffuse the process gas;
An injection plate disposed below the diffusion plate to inject the process gas diffused by the diffusion plate into the processing space;
A gas flow path forming unit installed between the top plate and the diffusion plate to induce a gas supplied from a central portion of the top plate to the edge of the diffusion plate and then inject gas between the diffusion plate and the injection plate ,
The diffusion plate,
Installed at intervals from the bottom of the gas flow path forming portion to form a first communication space (DS) independent of the gas flow path forming portion,
Gas supplied from the central portion of the top plate is directly injected between the diffusion plate and the injection plate through the gas flow path forming unit,
And a gas supplied through the top plate is injected between the diffusion plate and the injection plate after diffusion in the first communication space (DS). The method according to claim 1,
The gas flow path forming unit,
A central flow path forming unit coupled to a bottom surface of the top plate and receiving gas from a central portion of the top plate;
A plurality of branch flow channel forming portions coupled to a bottom surface of the top plate to guide gas from the central flow channel forming portion to an edge of the diffusion plate;
And a plurality of first gas connection pipes coupled to each branch flow path forming portion at an edge of the diffusion plate to inject gas between the diffusion plate and the injection plate through the first communication hole formed in the diffusion plate. Substrate processing apparatus to be. The method according to claim 2,
The plurality of branches may be coupled to the bottom surface of the top plate to correspond to the through holes formed through the top plate and to transfer the gas supplied through the through holes to each of the plurality of branch flow channel forming parts. A central flow path forming member having a plurality of flow path connecting parts formed to correspond to each of the flow path forming parts;
The branch flow path forming unit may include a branch flow path forming member coupled to each of the plurality of flow path connecting parts, coupled to a bottom surface of the top plate, and having a vertical U-shaped vertical cross section in a longitudinal direction. Device. The method according to claim 2,
The central flow path forming unit is coupled to the bottom surface of the top plate and supplied through the through hole to cover the center flow path formed in the bottom of the top plate to correspond to the through hole formed through the top plate. It includes a central flow path forming member for transmitting to each of the plurality of branch flow path forming portion,
The central flow path forming groove has a plurality of flow path connecting parts corresponding to each of the plurality of branch flow path forming parts.
The branch flow path forming part may be connected to each of the plurality of flow path connecting parts, and the bottom surface of the top plate may cover a plurality of branch flow path forming grooves having a vertical vertical section in a longitudinal direction on a bottom surface of the top plate in a U shape. Substrate processing apparatus comprising at least one cover member to be coupled. The method according to claim 4,
And the plurality of first gas connection pipes are installed such that the moving distance of the gas from the through hole to each of the first communication holes is the same. The method according to any one of claims 2 to 4,
The plurality of branching channel forming units, the two or more sub-branching channel forming units are combined to branch into two or more sub-branch channel at the end,
The first gas connection pipe, substrate processing apparatus, characterized in that coupled to each of the sub-branch flow path forming portion. The method according to any one of claims 2 to 4,
The diffusion plate has a plurality of second communication holes formed corresponding to the central flow path forming portion,
The gas flow path forming unit may include a plurality of second gas connection pipes connecting the central flow path forming unit and the second communication hole to inject gas between the diffusion plate and the injection plate through the second communication hole formed in the diffusion plate. Substrate processing apparatus comprising a. The method according to any one of claims 1 to 4,
The top plate may have a rectangular planar shape, and the plurality of branch flow path forming parts may be provided at eight points corresponding to the center of the vertex and the side along the edge of the rectangle.
KR1020150058313A 2015-04-24 2015-04-24 Substrate processing apparatus KR102046084B1 (en)

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KR102154486B1 (en) * 2018-10-11 2020-09-10 주식회사 테스 Gas supply unit
CN109817554B (en) * 2019-01-31 2020-12-25 武汉华星光电半导体显示技术有限公司 Gas diffuser

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KR20130055353A (en) * 2011-11-18 2013-05-28 세메스 주식회사 Substrate transfering tray
KR101185376B1 (en) * 2012-02-23 2012-09-24 주식회사 원익아이피에스 Gas injecting assembly and Apparatus for depositing thin film on wafer using the same
JP6007143B2 (en) * 2013-03-26 2016-10-12 東京エレクトロン株式会社 Shower head, plasma processing apparatus, and plasma processing method

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