KR20030085195A - Chemical Vapor Deposition Apparatus - Google Patents

Abstract

PURPOSE: A CVD(Chemical Vapor Deposition) apparatus is provided to be capable of preventing the damage of a substrate and a circuit device formed at the upper portion of the substrate by using a double structure showerhead made of the first and second showerhead. CONSTITUTION: A CVD apparatus is provided with a chamber(200), a plurality of flow pipes(217,218) for supplying process gases into the chamber, a double structure showerhead, and a heater(220) for supporting and heating a substrate(219). Preferably, the double structure showerhead includes the first showerhead(207) having a plurality of jet pipe for uniformly jetting material gas and the second showerhead(211) made of insulating material. At this time, the second showerhead has a plurality of through holes(213) inserted with each jet pipe and a plurality of jet holes(214) for uniformly jetting reaction gas or reaction gas radical.

Description

Chemical Vapor Deposition Apparatus {Chemical Vapor Deposition Apparatus}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical vapor deposition apparatus, and more particularly, to a chemical vapor deposition apparatus that divides a showerhead at predetermined intervals, divides it into two parts, and generates plasma only on one side of the showerhead.

In general, a method of applying plasma includes a method of generating a plasma directly in a reactor and applying it to deposition, and a method of generating a plasma from outside of the reactor and supplying it to the reactor and applying it to deposition.

1A shows a conventional plasma chemical vapor deposition apparatus configured to generate plasma directly in a reactor.

As shown in FIG. 1A, the conventional plasma chemical vapor deposition apparatus includes a chamber 101 having an exhaust port 100 formed at a lower portion thereof, and a source gas and a reaction gas mounted on an upper surface of the chamber 101 to penetrate into the center of the chamber 101. And injection heads 102 to 104 for injecting purge gas, shower heads 106 formed with a plurality of injection holes 105 to inject process gas, and process gases to be injected by the shower head 106. And a heater 108 that supports a wafer or substrate 107 (hereinafter referred to as a substrate) on which a thin film is deposited and provides a predetermined heat source. In addition, the conventional plasma chemical vapor deposition apparatus installs an RF power connection unit 109 to the shower head 106 to connect an external RF power source 110, and electrically connects the shower head 106 to which the RF power source 110 is applied. Insulating part 111 is installed on top of shower head 106 so as to insulate it, so that plasma is generated directly in the reactor of chamber 101.

Such a direct plasma method can generate plasma directly in the reactor to effectively activate the source gas supplied into the reactor during the process, thereby greatly improving the uniformity and deposition rate of the thin film on the substrate. However, this direct plasma method has a disadvantage of causing damage to the substrate and the circuit elements formed thereon due to ion implantation and ion collision as the plasma is generated directly in the reactor.

FIG. 1B shows a conventional plasma chemical vapor deposition apparatus for supplying and depositing an externally generated plasma into an reactor through an external plasma supply device.

As shown in FIG. 1B, the conventional plasma chemical vapor deposition apparatus is configured in the same manner as the chemical vapor apparatus of FIG. 1A except that the plasma generated by the external plasma generator 112 is used. That is, the plasma chemical vapor deposition apparatus of FIG. 1B directly supplies the plasma generated by the external plasma generator 112 into the reactor of the chamber 101 to induce a reaction between the source gas adsorbed on the substrate 107 and the reaction gas plasma. It is configured to ensure a fast reaction rate at a lower temperature.

The plasma chemical vapor deposition apparatus does not have a problem such as damage to the substrate and the circuit elements formed thereon by the plasma generated directly in the reactor, as shown in Figure 1a, members of the ions, electrons and radicals constituting the plasma inside the reactor Recombination with each other during the supply to the reactor reduces the efficiency than the first generated plasma has a disadvantage of low reaction contribution.

Therefore, the present invention has been made in order to solve the problems of the prior art as described above, divided into a showerhead at a predetermined interval to separate the double and the circuit formed on the substrate so that the plasma is generated only on one side of the showerhead It is an object of the present invention to provide a chemical vapor deposition apparatus for preventing damage to the device.

Figure 1a is a schematic diagram showing the components of a conventional plasma chemical vapor deposition apparatus,

Figure 1b is a schematic diagram showing the components of a conventional plasma chemical vapor deposition apparatus using an external plasma supply device,

2 is a schematic view showing the components of the chemical vapor deposition apparatus according to the first embodiment of the present invention,

3 is a schematic view showing the components of the chemical vapor deposition apparatus according to the second embodiment of the present invention,

Figure 4a is a rear view showing the back of the showerhead which is an important part of the chemical vapor deposition apparatus shown in Figures 2 and 3,

4B and 4C are schematic diagrams each showing the form of an RF electrode plate which is a part of the chemical vapor deposition apparatus shown in FIG. 3.

♠ Explanation of symbols on the main parts of the drawing ♠

200: chamber 201: upper plate

202: RF power source 203: RF power connection

204: RF rod 205: RF rod insulation

206: energization section 207: first shower head

208: first buffer portion 209: lower plate

210: insulation 211: second shower head

212: source gas injection pipe 213: through hole

214: Radial injection hole 215: RF electrode plate

216: second buffer unit 217: source gas injection pipe

218: reaction gas inlet tube 219: substrate

220: heater

According to the present invention for achieving the above object, the upper inner surface of the chamber is in close contact with the upper circumferential surface of the shower head is provided with a current-carrying energization portion, between the shower head is supplied with an external RF power to generate a plasma And an RF electrode plate having a plurality of holes formed therein, and a source gas injection tube communicating with the upper part of the shower head so as to inject the raw gas into the upper part of the shower head. Characterized in that the reaction gas inlet pipe is installed so as to communicate the reaction gas in between.

In addition, according to the present invention, the upper portion of the shower head is insulated from the upper inner surface of the chamber through an insulating material and is supplied with an external RF power to generate a plasma, the RF electrode plate having a plurality of injection holes is installed, the chamber A reaction gas inlet tube communicating with the upper portion of the shower head to inject the reaction gas is installed on the upper side of the chamber, and a source gas injection tube communicating with the inlet of the source gas between the shower heads. It is characterized in that it is installed.

Hereinafter, with reference to the accompanying drawings, preferred embodiments of the chemical vapor deposition apparatus according to the present invention will be described in detail.

The chemical vapor deposition apparatus of the present invention is configured to form a thin film through the supply of process gases such as source gas and reaction gas. In addition, the chemical vapor deposition apparatus of the present invention, by dividing the shower head at predetermined intervals and separating it into a double, thereby fundamentally preventing the source gas and the reaction gas from mixing inside the shower head, and plasma inside one side of the shower head. To generate and spray into the reactor.

<First Embodiment>

Figure 2 is a schematic diagram showing the components of the chemical vapor deposition apparatus according to the first embodiment of the present invention.

As shown in FIG. 2, the chemical vapor deposition apparatus of the present invention installs an upper plate 201 which is a part of the chamber 200 on an upper portion of the chamber 200, and an external RF on one side of the upper plate 201. An RF power connector 203 is installed to connect with the power source 202. The RF power connector 203 is connected to the RF rod 204, and the RF rod 204 is formed around the RF rod insulator ( 205 is electrically insulated from the top plate 201.

In addition, although the electricity supply part 206 is provided in the lower surface of the upper plate 201, the 1st buffer part 208 which has a predetermined space | interval on the upper part of the 1st shower head 207 which is located in the lower part of the electricity supply part 206 is carried out. ) To be partitioned. That is, the first buffer portion 208 is partitioned between the energizing portion 206 and the first shower head 207 by bringing the circumferential surface of the first shower head 207 into close contact with the circumferential surface of the energizing portion 206. do. In this case, the lower circumferential surface of the first showerhead 207 is supported by the insulating portion 210 supported by the lower plate 209 which is a part of the chamber 200. That is, the circumferential surface of the first shower head 207 is positioned between the energizing portion 206 and the insulating portion 210. Therefore, the first showerhead 207 is electrically grounded to the top plate 201 through the energizing portion 206.

In addition, a second shower head 211 supported by the lower plate 209 is positioned below the insulating portion 210. The second shower head 211 is formed of an insulating material, and is disposed to correspond to the first shower head 207 at a predetermined interval. In addition, the first shower head 207 is provided with a plurality of source gas injection pipes 212 for evenly injecting the source gas. In addition, the second shower head 213 has a plurality of through holes 213 through which the source gas injection pipe 212 penetrates, and a plurality of reaction gases and radical injection holes 214 for evenly injecting reaction gas and reaction gas radicals. (Hereinafter, referred to as a "radical injection hole") is formed. The first shower head 207 and the second shower head 211 formed in this way, that is, the source gas injection pipe 212 of the first shower head 207 in the through hole 213 of the second shower head 211. ), The second buffer unit 216 is partitioned between the first showerhead 207 and the second showerhead 211.

In addition, an RF electrode plate 215 having a through hole and a reaction gas injection hole having the same shape as that of the second shower head 211 is disposed on an upper surface of the second shower head 211. That is, the through hole of the RF electrode plate 215 has the same diameter as the through hole 213 of the second shower head 211 so that the source gas injection pipe 212 of the first shower head 207 is fitted. The injection hole of the electrode plate 215 has the same diameter in the axial direction as the radical injection hole 214 of the second shower head 211.

At this time, the circumferential surface of the RF electrode plate 215 is fixed between the insulating portion 210 and the second shower head 211. Therefore, the RF electrode plate 215 is insulated from the inner and bottom plates 209 of the reactor that are electrically grounded. As a result, no plasma is generated inside the reactor.

The RF rod 204 is connected to the RF electrode plate 215. Therefore, when RF power is supplied, plasma is generated in the second buffer unit 216 positioned above the RF electrode plate 215.

In addition, a source gas injection tube 217 is installed at an outer side of the upper plate 201 to penetrate the inside thereof, and the lower plate 209 and the insulating unit 210 communicate with the second buffer unit 216. The gas injection pipe 218 is formed.

In addition, a heater 220 is provided inside the reactor of the chamber 200 to support a wafer or substrate 219 (hereinafter, referred to as a substrate) on which an actual thin film is formed and to provide predetermined thermal energy.

Chemical vapor deposition apparatus of the present invention configured as described above is supplied to the reaction gas through the second buffer unit 216 and generates a plasma to spray the substrate 219 through the second shower head 211, the first buffer The raw material gas is supplied to the substrate 219 through the unit 208. Therefore, in the present invention, not only the source gas and the reaction gas are mixed inside the shower head, but also no plasma is generated in the reactor.

Second Embodiment

Figure 3 is a schematic diagram showing the components of the chemical vapor deposition apparatus according to the second embodiment of the present invention.

As shown in FIG. 3, the chemical vapor deposition apparatus of the present invention installs an upper plate 301 which is a part of the chamber 300 on the upper part of the chamber 300, and an external RF on one side of the upper plate 301. Install an RF power connection 303 that can be connected to the power source (302). The RF power connection 303 is connected to the RF rod 304, and the RF rod 304 is electrically insulated from the upper plate 301 by an RF rod insulation 305 formed around the RF rod 304.

In addition, an RF electrode plate 315 is disposed below the upper plate 301 so that the first buffer unit 308 having a predetermined interval is partitioned thereon. The RF electrode plate 315 is connected to the RF rod 304, the upper insulating portion 306 formed on the lower circumferential surface of the upper plate 301 and the agent in close contact with the lower surface of the RF electrode plate 315. It is supported by one showerhead 307. In addition, the circumferential surface of the first shower head 307 is supported by the lower insulating portion 310 supported by the lower plate 309. The first shower head 307 is made of an insulating material that is not energized. Therefore, the RF electrode plate 315 is electrically insulated from the lower plate 309 that is part of the chamber 300 and inside of the reactor that is electrically grounded. Thus, when RF power is supplied to the RF electrode plate 315, plasma is generated only in the first buffer unit 308.

In addition, a second shower head 311 supported by the lower plate 309 is positioned below the lower insulating portion 310. The second shower head 311 is positioned corresponding to the first shower head 307 positioned at an upper portion thereof at a predetermined interval.

In addition, the first shower head 307 is provided with a plurality of reaction gases and radical injection tubes 312 (hereinafter referred to as "radical injection tubes") for evenly injecting the reaction gas and the reaction gas radicals. The second shower head 313 is provided with a plurality of through holes 313 through which the radical injection tube 312 penetrates, and a plurality of source gas injection holes 314 for evenly injecting the source gas. The first shower head 307 and the second shower head 311 formed in this way, that is, the radical injection pipe 312 of the first shower head 307 in the through hole 313 of the second shower head 311 In this case, the second buffer part 316 is partitioned between the first shower head 307 and the second shower head 311.

In the RF electrode plate 315, a plurality of injection holes having the same diameter as the radical injection tube 312 of the first shower head 311 is formed at a position corresponding to the radical injection tube 312. In addition, a reaction gas injection tube 318 is installed at an outer side of the upper plate 301 and penetrates through the inside thereof, and the lower plate 309 and the lower insulator 310 communicate with the second buffer unit 316. The source gas injection pipe 317 is formed.

In addition, a heater 320 is provided inside the reactor of the chamber 300 to support a wafer or substrate 319 (hereinafter, referred to as a substrate) on which an actual thin film is formed and to provide predetermined thermal energy.

The chemical vapor deposition apparatus of the present invention configured as described above supplies the reaction gas through the first buffer unit 308 and generates a plasma to spray the substrate 319 through the first shower head 307, and the second buffer. The raw material gas is supplied through the unit 316 to be sprayed onto the substrate 319. Therefore, in the present invention, not only the source gas and the reaction gas are mixed inside the shower head, but also no plasma is generated in the reactor.

FIG. 4A is a rear view showing a rear surface of a shower head which is an important part of the chemical vapor deposition apparatus shown in FIGS. 2 and 3, and a plurality of source gas injection pipes 212 are provided on the rear surfaces of the second shower heads 211 and 311. Alternatively, the through holes 213 and 313 of the radical injection pipe 312 and the radical injection hole 214 or the source gas injection hole 314 are arranged in a lattice shape.

4B and 4C are schematic diagrams each showing the form of an RF electrode plate which is a part of the chemical vapor deposition apparatus shown in FIG. 3.

As shown in FIGS. 3, 4B and 4C, the injection holes formed in the RF electrode plate 315 according to the second embodiment of the present invention evenly spray the reaction gas radicals onto the substrate 319. These injection holes have the same diameter in the axial direction, and have the same diameter as the radical injection pipe 312 of the first shower head 307. In addition, the injection hole of the electrode plate 315 has a tapered shape in which the upper diameter is large and the lower diameter is small, and the bottom of the injection hole is the same as the radical injection pipe 312 of the first shower head 307. Have a diameter.

When the RF power source 302 is applied to the RF electrode plate 315 having the above shape, plasma is generated in the first buffer unit 308. However, a hollow cathode effect occurs in which plasma is generated in the injection hole of the RF electrode plate 315 according to the pressure in the reactor, that is, the pressure inside the shower head and the intensity of the applied RF power. At this time, in the case of the tapered injection hole as shown in FIG. When such a hollow cathode phenomenon occurs, the plasma density increases compared to the case where there is no hollow cathode phenomenon in terms of the density of plasma generated by the same RF power source, thereby increasing the deposition efficiency of the substrate.

As described in detail above, the chemical vapor deposition apparatus of the present invention divides the shower head at predetermined intervals and separates the shower head in a double manner, thereby fundamentally preventing mixing of the source gas and the reaction gas in the shower head, and at one side of the shower head. By generating a plasma in the interior of the injection into the reactor, there is an effect of preventing damage to the substrate and the circuit elements formed thereon.

The technical details of the chemical vapor deposition apparatus of the present invention have been described above with the accompanying drawings, but this is by way of example only for describing the best embodiment of the present invention and not for limiting the present invention.

In addition, it is obvious that any person skilled in the art can make various modifications and imitations within the scope of the appended claims without departing from the scope of the technical idea of the present invention.

Claims (10)

A chamber formed with an exhaust port in the lower portion, injection tubes for supplying process gases into the chamber, and the process gases supplied through the injection tubes are divided into two upper and lower portions so as to be individually supplied into the reactor. In the chemical vapor deposition apparatus comprising a showerhead and a heater for supporting a wafer or a substrate on which a thin film is deposited by process gases injected by the showerhead and providing a predetermined heat source. The upper inner surface of the chamber is provided in close contact with the upper circumferential surface of the shower head and the energization portion is installed, the RF electrode plate is formed between the shower head receives the external RF power to generate a plasma and a plurality of holes are formed It is installed, the upper part of the chamber is provided with a source gas injection pipe communicating with the upper part of the shower head to inject the raw gas, the side of the chamber is in communication with the shower head to inject the reaction gas between the Chemical vapor deposition apparatus characterized in that the reaction gas injection pipe is installed. The method of claim 1, wherein the shower head has a first shower head formed with a plurality of injection pipes so as to evenly inject the raw material gas, and a plurality of through holes through which the plurality of injection pipes are formed, respectively, the reaction gas or reaction A plurality of injection holes are formed to uniformly inject gas radicals, and include a second shower head made of an insulating material, and each of the injection pipes of the first shower head is formed in a through hole of the second shower head. Chemical vapor deposition apparatus. 3. The chemical vapor deposition apparatus according to claim 2, wherein the hole of the RF electrode plate comprises a through hole and a spray hole corresponding to the second shower head. The chemical vapor deposition apparatus according to claim 3, wherein the RF electrode plate is in close contact with an upper surface of the second shower head. 5. The chemical vapor deposition apparatus according to claim 4, wherein the injection hole of the RF electrode plate has an axial diameter equal to the diameter of the injection hole of the second shower head. A chamber formed with an exhaust port in the lower portion, injection tubes for supplying process gases into the chamber, and the process gases supplied through the injection tubes are divided into two upper and lower portions so as to be individually supplied into the reactor. In the chemical vapor deposition apparatus comprising a showerhead and a heater for supporting a wafer or a substrate on which a thin film is deposited by process gases injected by the showerhead and providing a predetermined heat source. The upper portion of the shower head is provided with an RF electrode plate insulated from the upper inner surface of the chamber through an insulating material and supplied with external RF power to generate plasma and formed with a plurality of injection holes. A reaction gas inlet tube communicating with the upper portion of the reaction gas may be installed at an upper portion thereof, and a source gas injection tube communicating with the shower head may be installed at the side of the chamber to inject the raw gas. Chemical vapor deposition system. The showerhead of claim 6, wherein the shower head comprises a plurality of injection pipes formed with an insulating material and a plurality of through-holes through which the plurality of injection pipes are formed, and the plurality of injection pipes respectively penetrate the reaction gas or the reaction gas radicals. And a second shower head having a plurality of injection holes formed therein so as to form a hole and evenly inject the raw gas, and inserting the injection pipes of the first shower head into the through holes of the second shower head, respectively. Chemical vapor deposition apparatus characterized in that. 8. The chemical vapor deposition apparatus according to claim 7, wherein the RF electrode plate is in close contact with an upper surface of the first shower head. The chemical vapor deposition apparatus according to claim 8, wherein an injection hole of the RF electrode plate has an axial diameter equal to a diameter of the injection pipe of the first shower head. 10. The method of claim 8, wherein the injection hole of the RF electrode plate has a tapered shape in which the diameter decreases toward the lower side and the bottom end has the same diameter as the inner diameter of the injection tube of the first shower head Vapor deposition apparatus.