KR101104638B1 - Plasma processing apparatus - Google Patents

Abstract

PURPOSE: A plasma processing apparatus is provided to discharge residual gas through the upper part of a chamber, thereby improving the uniformity of plasma generated in a plasma generation electrode. CONSTITUTION: A plasma processing apparatus(1000) comprises a chamber(1300) and a plasma generation electrode including a substrate support stand(1100) and a plurality of linear members(111). The substrate support stand is arranged in the lower part of the inside of the chamber in order to support a substrate(S). One or more parts among the plasma generation electrode and a susceptor are transferred following the movement of the substrate. The plasma generation electrode is arranged in the upper part of the substrate support stand by facing the substrate support stand. The plasma generation electrode comprises linear electrode members which are arranged side by side. The linear electrode members have a pipe shape which has a gas injection hole(112) in the lower part of the linear electrode members. The chamber accepts the substrate support stand and plasma generation electrode. An exhaust pipe(1400) is arranged in the central part of the chamber.

Description

Plasma Processing Equipment {PLASMA PROCESSING APPARATUS}

The present invention relates to a plasma processing apparatus, and more particularly, to a plasma processing apparatus applicable to a large area.

In general, among semiconductor manufacturing processes for manufacturing devices such as integrated circuit devices, liquid crystal displays, solar cells, and the like, a process of forming a thin film on a substrate to be processed is performed by plasma enhanced chemical vapor deposition (PECVD). Proceeds through the device.

The PECVD apparatus includes a substrate support formed in an inner space of a chamber for supporting and heating a substrate, a gas supply portion formed on the substrate support to inject a process gas toward the substrate, a gas discharge portion for discharging the gas; It includes a plasma generating electrode.

On the other hand, a large area flat plate electrode is conventionally used to form a film of a required material on a substrate using plasma. In the case of using a large area flat electrode, the frequency is increased to generate a high density plasma, and there is a sudden power loss in the electrode as the frequency is increased. To improve this, ladder-shaped electrodes have been developed.

The gas injected from the shower head passes through a ladder-shaped electrode to which RF power is applied and becomes a plasma to form a film on the substrate. However, when VHF power is applied to the ladder-shaped electrode in order to improve the deposition rate, the ladder-shaped electrode acts as a shadow mask for the gas injected from the shower head, and thus the ladder-shaped electrode. There was a problem that the deposition is hardly made at the bottom.

In order to improve this, a method of injecting a gas through a ladder-shaped electrode has been developed, but a problem in that the gas injected through the ladder-shaped electrode is not uniform.

FIG. 1 is a schematic view showing a conventional plasma processing apparatus, and FIGS. 2A and 2B show simulation results of the velocity and pressure of the plasma generated in the plasma processing apparatus of FIG. 1 and the residual gas exhausted, respectively. In FIG. 1, the substrate support 11, the plasma generating electrode 12, the chamber 13, and the like are exaggerated in size, distance, and the like.

1, 2A and 2B, the conventional plasma processing apparatus 10 includes a substrate support 11 and a plasma generating electrode 12 supporting a substrate S in a chamber 13, and generating plasma. The substrate S is processed by generating a plasma 12 between the electrode 12 and the substrate support 11. At this time, the residual gases are exhausted through the exhaust port 14 below the substrate support 11 through a narrow space inside the chamber 13 and the substrate support 11 side. Therefore, even generation of plasma P evenly over the entire surface of the substrate S is fundamentally impossible. That is, even if the gas is supplied relatively evenly through the upper portion, as shown in FIG. Will not be created.

In this manner, as shown in Figs. 2A and 2B, the plasma P is hardly generated at the center portion, but is generated locally at a limited amount, for example, to form a non-uniform thin film on the substrate S. Moreover, when VHF power is applied to the plasma generating electrode 12, such a nonuniformity becomes more severe.

Accordingly, the problem to be solved by the present invention is to provide a plasma processing apparatus that can improve the uniformity during high-speed deposition.

The plasma processing apparatus according to an aspect of the present invention includes a substrate support, a plasma generating electrode, and a chamber. The substrate support supports the substrate. The plasma generating electrode is disposed on the substrate support to face the substrate support, injects a gas toward the substrate support at the bottom, and generates the gas by using an electrical power applied from the outside. To this end, the plasma generating electrode includes a linear electrode member arranged to be spaced apart from each other in parallel with each other in a pipe shape having a plurality of gas injection holes toward the bottom. The chamber accommodates the substrate support and the plasma generating electrode, and an exhaust port is formed to exhaust the residual gas toward the upper portion, and discharges the residual gas to the exhaust port through a space between the linear electrode members.

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Meanwhile, the plasma processing apparatus may further include a baffle disposed on the plasma generating electrode. The baffle may include a plurality of holes, or the baffle may include a plurality of slits formed in parallel with each other, and the baffle may have a extending direction of the slits different from a length direction of the linear electrode member. It may be arranged to contact the linear electrode member.

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On the other hand, the exhaust port, may be disposed in the central portion.

According to such a plasma processing apparatus according to an exemplary embodiment of the present invention, the plasma generating electrode injects a gas toward the lower side and exhausts the residual gas through the upper chamber, thereby uniformizing the plasma generated in the plasma generating electrode. Can improve.

In addition, when a baffle is disposed above the plasma generating electrode, a buffer space for rapid pressure change is formed in the upper space of the baffle and the chamber to suppress the occurrence of turbulence and to apply a uniform pressure to the buffer space as a whole. To maintain an even exhaust pressure.

In addition, the gas supply unit is formed of a pipe structure connected to the plurality of feeders of the gas storage unit and connected so that the lengths from the gas inlets to which external electric power is applied to the plurality of feeders are all the same. Gas can be supplied to the gas reservoir without changing the electrical conditions.

In addition, the number of the plurality of feed parts is 2 ⁿ , and the pipe structure is such that the 2 ^n-1 first pipes for connecting two of the plurality of feed parts connect feed parts that are not adjacent to each other, thereby providing a gas. While maintaining the same electrical length from the inlet to the plurality of feed portions, the symmetry of both edge portions with respect to the center portion can be destroyed to form a deposition film more evenly in the center portion and the edge portion.

In addition, the exhaust port is disposed in the center portion, thereby providing symmetry to plasma generation and residual gas discharge, thereby forming a more uniform deposition film.

1 is a schematic view showing a conventional plasma processing apparatus.
2A and 2B are diagrams showing simulation results of the velocity and the pressure of the plasma generated in the plasma processing apparatus of FIG. 1 and the exhaust gas remaining.
3 is a schematic diagram showing a plasma processing apparatus according to an exemplary embodiment of the present invention.
4A and 4B are diagrams showing simulation results of the velocity and pressure of the plasma generated in the plasma processing apparatus of FIG. 3 and the exhaust gas remaining.
Fig. 5 is a schematic diagram showing a plasma processing apparatus according to another exemplary embodiment of the present invention.
FIG. 6 is a perspective view illustrating the baffle shown in FIG. 5.

The above-described features and effects of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, and thus, those skilled in the art to which the present invention pertains may easily implement the technical idea of the present invention. Could be. The present invention is not limited to the following embodiments and may be implemented in other forms. The embodiments introduced herein are provided to make the disclosure more complete and to fully convey the spirit and features of the present invention to those skilled in the art. In the drawings, the thickness of each device or film (layer) and regions has been exaggerated for clarity of the invention, and each device may have various additional devices not described herein.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings.

3 is a schematic diagram showing a plasma processing apparatus according to an exemplary embodiment of the present invention.

Referring to FIG. 3, the plasma processing apparatus 1000 according to an exemplary embodiment of the present invention includes a substrate support 1100, a plasma generating electrode including a plurality of linear members 111, and a chamber 1300. .

The substrate support 1100 is disposed below the interior of the chamber 1300 to support the substrate S. When the substrate S is transferred to the substrate support 1100 and seated thereon, at least one of the plasma generation electrode and the secessor 1100 may be transported so as to be close between the plasma generation electrode and the substrate support 1100. A plasma generating space is defined in a space between an upper portion of the substrate support 1100 and a lower portion of the plasma generating electrode.

The plasma generating electrode is disposed to face the substrate support 1100 on the substrate support 1100. The plasma generating electrode may include, for example, a plurality of linear electrode members 111 disposed in parallel with each other, and the plurality of linear electrode members 111 may have a pipe shape having a gas injection hole 112 at a lower portion thereof. Have

When gas is supplied through the plurality of linear electrode members 111 having the pipe shape, the gas is injected downward through the gas injection holes 112, and the injected gas is applied to the linear electrode members 111. The plasma is generated by using external electric power.

The chamber 1300 accommodates the substrate support 1100 and the plasma generating electrode. That is, the substrate support 1100 and the plasma generating electrode are disposed in the chamber 1300. The chamber 1300 may be formed of, for example, aluminum whose surface is anodized. Although not shown, the chamber 1300 may be formed by combining one or more bodies, a lead may be formed to open the upper portion, and various modifications are possible.

An exhaust port 1400 for exhausting residual gas is formed in an upper portion of the chamber 1300. The exhaust port 1400 may be formed at a central portion of the chamber 1300. In more detail, when the center of the substrate support 1100 or the plasma generating electrode does not coincide with the center of the chamber 1300, the exhaust port 1400 is formed above the center of the substrate support 1100 or the plasma generating electrode. Can be.

4A and 4B are diagrams showing simulation results of the velocity and pressure of the plasma generated in the plasma processing apparatus of FIG. 3 and the exhaust gas remaining.

Referring to FIGS. 4A and 4B, although the difference in velocity and pressure in the exhaust gas may be left at the center and the side of the plasma generating electrode, the space between the substrate support and the plasma generating electrode, that is, in the space where the plasma processing is performed, may be observed. It can be seen that the difference between the center and the side is not large.

According to the plasma processing apparatus 1000 according to an exemplary embodiment of the present invention, a plasma generating electrode including a plurality of linear electrode members 111 disposed in parallel with each other is formed under the linear electrode member 111. The gas is injected toward the lower substrate S through the injection hole 112, and the remaining gas is discharged to the upper portion of the chamber through the space between the linear electrode members 111, thereby evenly spreading the entire surface of the substrate S. By supplying the gas, and evenly exhausting the residual gas through the upper portion of the entire surface of the substrate, it is possible to improve the uniformity of the plasma generated on the plasma generating electrode.

5 is a schematic view showing a plasma processing apparatus according to another exemplary embodiment of the present invention, Figure 6 is a perspective view showing the baffle 400 shown in FIG. The plasma processing apparatus 2000 illustrated in FIG. 5 is substantially the same except for the plasma processing apparatus 1000 and the baffle 400 illustrated in FIG. 3. Accordingly, the same or similar components will be denoted by the same reference numerals and redundant descriptions will be omitted.

Referring to FIG. 5, the plasma processing apparatus 2000 according to another exemplary embodiment of the present invention includes a substrate support 1100, a plasma generating electrode including a plurality of linear members 111, a chamber 1300, and a baffle ( baffle, 400).

The baffle 400 may be formed of, for example, a base plate 410 having a plurality of holes 420. The base plate 410 may include an insulating material. For example, the plurality of holes 420 may be arranged in a matrix shape in a rectangular shape. However, the shape and arrangement of the plurality of holes 420 are not limited thereto.

Alternatively, the baffle (not shown) according to another embodiment may be formed to include a plurality of slits (not shown) formed in parallel with each other. In this case, the baffle (not shown) is disposed such that the extending direction of the slit (not shown) is different from the longitudinal direction of the linear electrode member 111. Preferably, the baffle (not shown) may be disposed such that the extending direction of the slit (not shown) is perpendicular to the longitudinal direction of the linear electrode member 111.

In this case, the baffle (not shown) is disposed to contact the linear electrode member, so that the space between the linear electrode members 111 and the slit (not shown) may define a hole such as the hole 420 of FIG. 6. The same function as the plurality of holes 420 may be performed.

The baffle 400 separates the plasma space below the plasma generating electrode and the space above it, and the upper space serves as a buffer space. That is, the plurality of holes 420 serve as a nozzle throat to enable uniform exhaust of the exhaust gas, thereby uniformly inducing residual gas into the buffer space.

Therefore, in the upper space of the baffle 400 and the chamber 1300, a buffer space for rapid pressure change is formed to suppress turbulence and at the same time a uniform pressure is applied to the buffer space to maintain an even exhaust pressure. have.

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In the detailed description of the present invention described above with reference to the preferred embodiments of the present invention, those skilled in the art or those skilled in the art having ordinary skill in the art will be described in the claims to be described later It will be understood that various modifications and variations can be made in the present invention without departing from the scope of the present invention.

1000, 2000: plasma processing apparatus 1100: substrate support
1300: chamber 1400: exhaust port
111: linear electrode member 112: gas injection hole
400: baffle 410: base plate
420: hall

Claims (9)

A substrate support for supporting a substrate;
Disposed on the substrate support to face the substrate support, spraying gas toward the lower substrate support, and generating a plurality of gases into the plasma by using an electrical power applied from the outside, and spraying a plurality of gases toward the bottom Plasma generating electrodes arranged side by side so that a plurality of pipe-shaped linear electrode member having a hole spaced apart; And
A chamber including an exhaust port configured to receive the substrate support and the plasma generating electrode and to exhaust residual gas toward an upper portion thereof;
And the residual gas is discharged to the exhaust port through a space between the linear electrode members. delete The plasma processing apparatus of claim 1, further comprising a baffle disposed on the plasma generating electrode. 4. The plasma processing device of claim 3, wherein the baffle includes a plurality of holes. The baffle of claim 3, wherein the baffle includes a plurality of slits formed to be parallel to each other, and the baffle is arranged to be in contact with the linear electrode member, the extending direction of the slits being different from the longitudinal direction of the linear electrode member. Plasma processing apparatus, characterized in that. delete delete delete The plasma processing apparatus of claim 1, wherein the exhaust port is disposed at a central portion.

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