KR20110054829A - Thin film deposition apparatus - Google Patents

Abstract

PURPOSE: An apparatus for depositing a thin film is provided to improve efficiency by implementing both an atomic layer depositing method and a chemical vapor depositing method. CONSTITUTION: A chamber includes a space for depositing a substrate. A susceptor is rotatably installed on the space of the chamber. A raw gas sprayer(200a-200d) has N valves which control gas supplied to each gas supply pipe. A plurality of purge gas sprayers(101-104) are connected to the purge gas supply pipe in which a purge valve is installed. The controller controls the N valves and purge valves to deposit a thin film on the substrate with CVD(Chemical Vapor Deposition) or ALD(Atomic Layer Deposition).

Description

Thin film deposition apparatus

The present invention relates to a thin film deposition apparatus for depositing a thin film by injecting a source gas and a reaction gas on a substrate.

The semiconductor manufacturing process includes a deposition process for depositing a thin film on a wafer or a substrate, and an apparatus for performing the deposition process includes an atomic layer deposition apparatus and a chemical vapor deposition apparatus.

An atomic layer deposition apparatus is a device for depositing a thin film by sequentially spraying a source gas, purge gas, a reaction gas and a purge gas on a substrate (wafer). Such an atomic layer deposition apparatus has the advantage of uniformly depositing a thin film on a substrate, but the film deposition rate is relatively low.

The chemical vapor deposition apparatus is a device in which a source gas and a reactive gas are sprayed together on a substrate so that the two source gases react and are deposited on the substrate. Such a chemical vapor deposition apparatus has a higher film deposition rate than an atomic layer deposition apparatus, but the uniformity of the deposited thin film is relatively low.

However, since the showerhead of the conventional atomic layer deposition apparatus (revovolve type) is composed of a plurality of single showerhead, it is not possible to implement a chemical vapor deposition method. On the contrary, since the showerhead of the conventional chemical vapor deposition apparatus is composed of one double showerhead, atomic layer deposition cannot be implemented. That is, the conventional deposition apparatus can implement only one deposition method, and therefore, there is a problem in that two apparatuses must be manufactured separately in order to use both the chemical vapor deposition method and the atomic layer deposition method.

The present invention has been made to solve the above problems, an object of the present invention is to provide a thin film deposition apparatus that can implement both the atomic layer deposition method and chemical vapor deposition method.

In order to achieve the above object, the thin film deposition apparatus according to the present invention is provided with a chamber in which a space portion in which a deposition process is performed on a substrate is formed, and rotatably installed in the space portion of the chamber, and a plurality of substrates are mounted. It is connected to each of the N gas supply pipe is supplied to each of the N and the different kinds of gas supply, and a valve for controlling the supply and shut-off of the gas supplied to each gas supply pipe, the upper of the susceptor And a plurality of purge gas injectors disposed radially to the plurality of source gas injectors, and connected to a purge gas supply pipe having a purge valve for controlling supply and shutoff of the supplied purge gas, and disposed between the plurality of source gas injectors. And electrically connected to the N valves and the purge valve, chemical vapor deposition (CVD), and atomic layer deposition. A control unit for controlling the N valves and the purge valves so that the thin film is deposited on the substrate by any one of Atomic layer deposition (ALD) and a method of depositing a thin film by chemical vapor deposition after atomic layer deposition. Characterized in that it comprises a.

According to the present invention, the control unit, in the state in which the susceptor is rotated to deposit a thin film on the substrate by atomic layer deposition using two or more different gases among the N kinds of gases, The plurality of source gas injectors are arranged in such a manner that the gas used for thin film deposition is sequentially repeatedly sprayed on the substrate, and the purge gas is injected onto the substrate between injections of the gas used for thin film deposition. According to the injection sequence of the gas used in the thin film deposition in turn, only the valve for controlling the supply and shutoff of the corresponding gas of the N valves of the source gas injector is opened and the other valves are blocked, the purge valve is It is preferable to open.

In addition, according to the present invention, the control unit, the thin film of the N valves provided in the source gas injector to deposit a thin film on the substrate by a chemical vapor deposition method using two or more of the N kinds of gases. It is desirable to open a valve that controls the supply and shut off of the gas used for deposition.

According to the present invention, the control unit, in the initial stage of the thin film deposition process, to deposit a thin film on the substrate by atomic layer deposition using two or more different gases of the N kinds of gases, In a state where a susceptor is rotating, the gas used for thin film deposition is sequentially repeatedly sprayed on the substrate, and the purge gas is sprayed on the substrate between injections of the gas used for thin film deposition. A plurality of source gas injectors are sequentially arranged along the direction of injection of the gases used for the thin film deposition, and only the valves controlling the supply and shutoff of the corresponding gas among the N valves of the source gas injector are opened. The remaining valves are shut off, the purge valves open, and after the initial stage, two of the N kinds of gases In order to deposit a thin film on the substrate by chemical vapor deposition using a gaseous phase, it is preferable to open a valve that controls the supply and blocking of the gas used for the thin film deposition among the N valves provided in the source gas injector. .

According to the present invention having the above-described configuration, since the atomic layer deposition method and the chemical vapor deposition method can be implemented in one device, the economics and efficiency of the device is improved.

1 is a cross-sectional view of a thin film deposition apparatus according to an embodiment of the present invention, Figure 2 is a plan view of the showerhead assembly shown in Figure 1, Figure 3 is a cross-sectional view of the raw material gas injector shown in Figure 2, Figure 4 Is a cross-sectional view of the purge gas injector shown in FIG.

1 to 4, the thin film deposition apparatus 1000 according to the present embodiment includes a chamber 500, a susceptor 600, a heater 700, a shower head assembly 300, It includes a control unit.

In the chamber 500, a space 501 is formed in which a deposition process for a substrate is performed. In addition, the chamber 500 is provided with a gate 502 through which the substrate enters and exits and an exhaust passage 503 for discharging gas in the chamber for loading / unloading the substrate.

The susceptor 600 is formed in the shape of a plate where the substrate is seated, and is installed in the space 501 so as to be lifted and rotated by being coupled to the drive shaft 601. The upper surface of the susceptor 600 is formed with a plurality of mounting portions (not shown) on which the substrate is mounted.

The heater 700 is used to heat the substrate to a process temperature, and is disposed below the susceptor 600 to heat the substrate.

The showerhead assembly 300 is intended to be able to perform both chemical vapor deposition (CVD) and atomic layer deposition (ALD). To this end, the shower head assembly 300 includes a plurality of source gas injectors 200a to 200d and a plurality of purge gas injectors 101 to 104. In the present embodiment, as shown in Figure 2, the showerhead assembly is composed of four source gas injectors (200a ~ 200d), and four purge gas injectors (101 ~ 104).

A source gas injector is a device for injecting different N kinds of gases toward a substrate, such as a source gas, a reaction gas, a precursor containing a metal, and a reducing gas such as H ₂ or NH _3. Gases that participate in the deposition process are included. To this end, N gas supply pipes are connected to the source gas injector, and N valves for controlling on / off and flow rate of the gas supplied to the gas supply pipes are provided in each gas supply pipe. Here, N is a natural number of 2 or more.

In the present embodiment, four source gas injectors 200a to 200d are provided, and the four source gas injectors 200a to 200d are radially disposed above the susceptor. Each source gas injector is connected to two (N = 2) gas supply pipes, that is, a first gas supply pipe 201 through which the first gas is supplied and a second gas supply pipe 202 through which the second gas is supplied. Hereinafter, the structure of the raw material gas injectors 200a to 200d will be described in detail with reference to FIG. 3.

The raw material gas injectors 200a to 200d according to the present exemplary embodiment include a shower head main body 240, a partition plate 250, a plurality of injection pins 270, and a power supply unit 280.

The showerhead body 240 includes an upper plate 210, a lower plate 220, and a bottom plate 230. The upper plate 210 has a first inlet through which a gas supply pipe of the N gas supply pipes is connected, and b second inlets through which the remaining b gas supply pipes of the N gas supply pipes are connected, respectively. Where a + b = N). In the present embodiment, two gas supply pipes are provided, and the first inlet 211 and the second inlet 212 are formed through each one, and the first gas supply pipe 201 is connected to the first inlet 211. The second gas supply pipe 202 is connected to the second inlet 212. The first gas supply pipe 201 is provided with a first valve 2011 for controlling supply and shutoff of the first gas, and the second gas supply pipe 202 is provided with a second valve for controlling supply and shutoff of the second gas. 2021 is provided. The heater 213 is embedded in the upper plate.

The lower plate 220 is formed in a ring shape and is coupled to the lower end of the upper plate 210. This bottom plate is grounded (grounded). The bottom plate 230 is formed in a plate shape. A plurality of injection holes are formed through the bottom plate 230, and the injection holes include a plurality of first injection holes 231 and a plurality of second injection holes 232 to which injection pins to be described later are connected. The bottom plate 230 corresponds to the bottom of the shower head body 240, is coupled to the lower end of the lower plate 220 is disposed inside the lower plate, the upper plate 210 and the lower plate 220 and Together with the receiving portion 241 is formed. Then, the bottom plate 230 is electrically connected to the bottom plate and grounded.

The partition plate 250 is formed in a flat plate shape, and a plurality of insertion holes 251 and a flow hole 252 communicating with the second inlet of the upper plate are formed therethrough. The partition plate 250 is provided inside the accommodating portion 241 to partition the accommodating portion into the first buffer portion 243 and the second buffer portion 242. The first buffer portion 243 is formed above the partition plate 250 and communicates with the first inlet 211. The second buffer part 242 is formed under the partition plate 250 and communicates with the second inlet 212. The partition plate 250 is made of a conductive material so that a plasma can be formed inside the accommodating portion 241 as described later.

In addition, the partition plate 250 is insulated and supported by the first insulating member 261 and the second insulating member 262. The first insulating member 261 is formed in an annular shape and coupled to the upper plate 210. The first insulating member 261 communicates with the second inlet 212 of the upper plate and the flow hole 252 of the partition plate. Flow holes are formed through. The second insulating member 262 is formed in an annular shape and coupled to the lower plate 220. The second insulating member 262 has a through hole communicating with the flow hole 252 of the partition plate. As shown in FIG. 3, the partition plate is disposed and supported between the first insulating member 261 and the second insulating member 262, and thus the upper plate 210 and the lower plate 220 and the partition plate ( 250 is insulated from each other.

The injection pin 270 is for injecting the first gas supplied to the first buffer part 243 into the substrate in a state in which the second gas supplied to the second buffer part 242 is separated from each other. The injection pin 270 is formed in a hollow shape, one end of the injection pin 260 is connected (inserted) into the insertion hole 251 of the partition plate, and the other end of the injection pin is the first injection port 231 of the bottom plate. ) Is connected (inserted). And, the injection pin 270 is made of an insulating material.

The power supply unit 280 is for applying power to the partition plate to generate a plasma in the receiving unit. In particular, in the present embodiment, the power supply unit applies RF power to the partition plate 250. The power supply unit includes an RF rod 281 and an RF connector 282. The RF rod 281 is formed in a bar shape and is inserted through the upper plate 210 and the first insulating member 261 and connected to the partition plate 250. The insulating member 283 is coupled to the outer circumferential surface of the RF rod 281. The RF connector 282 is connected to the RF rod 281 and applies RF power to the RF rod 281.

The separator 290 is further provided inside the shower head body. The separation plate is formed in a flat plate shape, and a plurality of flow holes 291 are formed therethrough. The separating plate is provided in the first buffer portion 243, and divides the first buffer portion into a first space portion 2431 and a second space portion 2432. In addition, support pins 292 for supporting the separation plate are coupled to both sides of the separation plate 290. The first gas introduced through the first inlet 211 is first diffused in the first space part 2431, and then flows into the second space part 2432 through the flow hole 291 to be uniform once more. After the diffusion is injected through the injection pin 270. Thus, the first gas is uniformly injected toward the substrate.

Four purge gas injectors (101, 102, 103, 104) are provided and arranged one by one between the raw gas injectors. A purge gas supply pipe 110 for supplying purge gas is connected to the purge gas injectors 101, 102, 103, and 104, and a purge valve 111 is installed in the purge gas supply pipe to control the supply and shutoff of the purge gas. As shown in FIG. 4, the purge gas injectors 101, 102, 103, and 104 have a single showerhead structure, and an accommodating part 120 in which the supplied purge gas is accommodated is formed. In addition, a plurality of injection holes 131 through which the supplied purge gas is injected are formed in the bottom portion 130 of the purge gas injector.

The controller (not shown) may be any one of chemical vapor deposition (CVD), atomic layer deposition (ALD), and chemical vapor deposition after atomic layer deposition. The first valve 2011, the second valve 2021, and the purge valve 111 are controlled to deposit a thin film on the substrate. That is, the controller controls the first valve, the second valve and the purge valve according to the type of thin film deposition process to be performed. Hereinafter, the valve control of the control part according to each process is demonstrated.

First, the case of depositing a thin film by the atomic layer vapor deposition method is demonstrated. At this time, the source gas is supplied to the first gas supply pipe 201, and the reaction gas is supplied to the second gas supply pipe 202. In order to deposit the thin film by atomic layer deposition, the source gas and the reaction gas are repeatedly sprayed sequentially, but a purge gas must be injected between the injection of the source gas and the reaction gas. For this purpose, the four source gas injectors are sequentially matched with the injection sequence of the source gas and the reaction gas along the arrangement direction (circumferential direction). Then, the first source gas injector 200a corresponds to the source gas, the second source gas injector 200b corresponds to the reaction gas, and the third source gas injector 200c corresponds to the source gas again, and the fourth The source gas injector 200d again corresponds to the reaction gas. In this state, while rotating the susceptor, only two valves of each source gas injector, that is, a valve controlling supply and shut-off of a corresponding gas among the first valve 2011 and the second valve 2021, are opened and the remaining valves are opened. Blocks. That is, the first and second valves 2021 of the first and third source gas injectors 200a and 200c are opened, and the second valve 2021 is blocked, and the second and fourth source gas injectors 200b and 200d are opened. The first valve 2011 is shut off and the second valve 2021 is opened. Then, the purge valve 111 of the purge gas injectors 101 to 104 is opened.

Then, the source gas is injected into the substrate when the substrate passes under the first source gas injector 200a, and then the purge gas injector 101, the second source gas injector 200b, the purge gas injector 102, and three The purge gas, the reaction gas, the purge gas, and the source gas are sequentially injected to the substrate while passing downward of the first source gas injector 200c. That is, while the substrate is rotating, the source gas, the purge gas, the reaction gas, and the purge gas are sequentially injected to the substrate, and thus a thin film is deposited on the substrate by atomic layer deposition. At this time, if RF power is applied to the partition plates of the second and fourth source gas injectors 200b and 200d as necessary, plasma is generated in the reaction gas supplied to the second buffer unit, thereby increasing the deposition rate.

In the case of depositing a thin film by chemical vapor deposition, both the first valve 2011 and the second valve 2021 of each source gas injector 200a to 200d are opened, and the third valve 111 of the purge gas injector is opened. Blocks. Then, the source gas and the reaction gas are injected together to the substrate, and thus a thin film is deposited on the substrate by chemical vapor deposition.

Meanwhile, the thin film may be deposited by atomic layer deposition in an initial step within a process, and then deposited by chemical vapor deposition. Such a process may be usefully used in the process of gap-filling trenches or contact holes.

That is, the controller controls the susceptor to rotate in the initial stage of the thin film deposition process, that is, filling the trench portion, and opens the first valves of the first and third raw material gas injectors 200a and 200c and the second. The valve is blocked, and the first and second valves of the second and fourth source gas injectors 200b and 200d are blocked. Then, the third valves of the purge gas injectors 101 to 104 are opened. Then, the source gas, the purge gas, the reaction gas, and the purge gas are sequentially sprayed onto the substrate, and thus a thin film is deposited on the trench portion of the substrate by atomic layer deposition. Therefore, the trench portion is filled without voids.

After the initial stage, that is, after the trench part is filled, the control unit also opens the second valves of the first and third source gas injectors 200a and 200c, and the second and fourth source gas injectors 200b and 200d. The first valve is also opened (ie, the first and second valves of all source gas injectors). The third valve of the purge gas injectors 101 to 104 is blocked. Then, the source gas and the reaction gas are injected together to the substrate, and thus a thin film is rapidly deposited on the substrate by chemical vapor deposition.

As described above, according to the present embodiment, by controlling the first valve, the second valve, and the purge valve according to the type of the thin film deposition process, the atomic layer deposition process and the chemical vapor deposition process can be performed with one device. Therefore, it is not necessary to manufacture the atomic layer deposition apparatus and the chemical vapor deposition apparatus, respectively, as in the prior art, thereby reducing the manufacturing cost.

Furthermore, according to the present embodiment, the chemical vapor deposition method can be implemented after the atomic layer deposition method in one process, and thus the thin film can be deposited at a high speed without generating voids in the trench or contact hole.

5 is a plan view of a showerhead assembly according to another embodiment of the present invention, Figure 6 is a cross-sectional view of the raw material gas injector shown in FIG.

5 and 6, the showerhead assembly 1300 according to the present embodiment has four source gas injectors 1201 to 1204 and four purge gas injectors 1101 to 1104. Four source gas injectors are arranged radially, and one purge gas injector is disposed between the source gas injectors. In the case of the present embodiment, the configuration of the purge gas injector is the same as the above-described embodiment, and the configuration of the source gas injector will be described below with reference to FIGS. 6 and 3.

In this embodiment, three (N = 3) gas supply pipes 201A, 202A, and 203A are connected to each source gas injector. To this end, two (a = 2) first inlets 211A and one (b = 1) second inlets 212A are formed in the upper plate. A first gas supply pipe 201A and a second gas supply pipe 202A are connected to the first inlet 211A, and a third gas supply pipe 203A is connected to the second inlet. Each gas supply pipe is provided with a first valve 2011A, a second valve 2021A, and a third valve 2031A, respectively.

However, in the present embodiment, for the connection of three gas supply pipes 201A, 202A, 203A, two gas supply pipes 201A, 202A are connected to the first buffer through the first inlet 211A, 1 Although two gas supply pipes 203A are connected to the second buffer part through the second inlet 212A, one gas supply pipe may be connected to the first buffer part and two gas supply pipes may be connected to the second buffer part. . In addition, the present invention may not be configured as a double shower head, but may be formed as a single shower head structure such as a purge gas injector.

Hereinafter, an embodiment of depositing a tungsten thin film using the showerhead assembly 1300 configured as described above will be described. To this end, a reducing gas is supplied to the first gas supply pipe 201A, and hydrogen (H ₂ ) or ammonia (NH ₃ ) is used as the reducing gas. A boron-containing gas is supplied to the second gas supply pipe 202A, and diborane (B ₂ H ₆ ) may be used as the boron-containing gas. The tungsten-containing precursor is supplied to the third gas supply pipe 203A, and tungsten fluoride (WF ₆ ) may be used as the tungsten-containing precursor.

The tungsten thin film deposition process includes an initial step of forming a tungsten nucleation layer and a step of forming a tungsten thin film.

First, the initial step of forming the tungsten nucleation layer is made by atomic layer deposition using diborane and tungsten fluoride. To this end, in the state where the susceptor is rotating, the second valve 2021A of the odd numbered raw gas injector, that is, the first raw material gas injector 1201 and the third raw material gas injector 1203 is opened and the first The valve 2011A and the third valve 2031A are shut off, and the third valve 2031A of the even-numbered arranged source gas sprayer, that is, the second raw material gas sprayer 1202 and the fourth raw material gas sprayer 1204 is opened. The first valve 2011A and the second valve 2021A are blocked. Then, the purge valve of the purge gas injector is opened. Then, diborane, purge gas, tungsten fluoride, and purge gas are sequentially sprayed onto the substrate while the substrate is rotated, thereby forming a tungsten nucleation layer on the substrate by atomic layer deposition.

After the tungsten nucleation layer is formed to a desired thickness through the initial stage described above, the tungsten thin film is deposited by chemical vapor deposition using tungsten fluoride and hydrogen, a reducing gas. To this end, the first valve 2011A and the third valve 2031A of each source gas injector are opened and the second valve 2021A is shut off. Then, the purge valve of the purge gas injector is shut off. Then, tungsten fluoride and hydrogen are injected together to the substrate yarn to deposit a tungsten thin film on the substrate. At this time, hydrogen is supplied to the first buffer portion and then injected into the substrate through the injection pin, tungsten fluoride is supplied to the second buffer portion and then injected into the substrate, and then mixed with each other outside the shower head body. Thus, hydrogen and tungsten fluoride react with each other in the showerhead body to prevent particles from being generated and accumulated.

Although the preferred embodiments of the present invention have been shown and described above, the present invention is not limited to the specific preferred embodiments described above, and the present invention belongs to the present invention without departing from the gist of the present invention as claimed in the claims. Various modifications can be made by those skilled in the art, and such changes are within the scope of the claims.

For example, in the above-described embodiment, the showerhead assembly is composed of four source gas injectors and four purge gas injectors, but as shown in FIG. 7, the showerhead assembly 300A includes two source gas injectors and two It may consist of a purge gas injector. In addition, the number, spraying area, and arrangement of the source gas sprayer and the purge gas sprayer may be changed to be optimized according to the characteristics of the thin film deposition process.

In addition, in the present embodiment, the power supply unit is connected to the second buffer portion of the source gas injector and the shower head main body is grounded. However, the connection of the power supply unit and the ground state of the shower head main body may be performed so that the plasma is generated in the first buffer unit. You can also change it.

1 is a cross-sectional view of a thin film deposition apparatus according to an embodiment of the present invention.

FIG. 2 is a plan view of the showerhead assembly shown in FIG. 1. FIG.

3 is a cross-sectional view of the raw material gas injector shown in FIG.

4 is a cross-sectional view of the purge gas injector shown in FIG. 2.

5 is a plan view of a showerhead assembly according to another embodiment of the present invention.

6 is a cross-sectional view of the raw material gas injector shown in FIG.

7 is a plan view of a showerhead assembly according to another embodiment of the present invention.

<Description of the symbols for the main parts of the drawings>

1000 Thin Film Deposition Apparatus 101 ~ 104

200a ~ 200d ... raw gas injector 300 ... shower head assembly

500 ... chamber 600 ... susceptor

700 Heater 210 Top plate

220 ... bottom plate 230 ... bottom plate

240 shower head unit 250 compartment

270 ... injection pin 280 ... power section

290 Separator

Claims (7)

A chamber in which a space portion in which a deposition process is performed on the substrate is formed; A susceptor rotatably installed in the space of the chamber and having a plurality of substrates mounted thereon; It is connected to each of the N gas supply pipe which is supplied to each of the N different kinds of gas, and has N valves for controlling the supply and shutoff of the gas supplied to each gas supply pipe, and radially above the susceptor A plurality of source gas injectors disposed; A plurality of purge gas injectors connected to a purge gas supply pipe having a purge valve for controlling supply and shutoff of the supplied purge gas and disposed between the source gas injectors; And Electrically connected to the N valves and the purge valve, the thin film is deposited by chemical vapor deposition (CVD), atomic layer deposition (ALD), and chemical vapor deposition after atomic layer deposition And a control unit for controlling the N valves and the purge valves so that the thin film is deposited on the substrate by any one of the methods. The method of claim 1, The control unit, In order to deposit a thin film on the substrate by atomic layer deposition using two or more different gases of the N kinds of gases, the gas used for the thin film deposition is the substrate while the susceptor is rotating. Repeatedly sprayed onto the substrate, so that the purge gas is sprayed onto the substrate between the sprays of the gas used to deposit the thin film, Only the valves for controlling the supply and shutoff of the corresponding gas among the N valves of the source gas injector are opened by sequentially matching the plurality of source gas injectors with the spraying order of the gases used for the thin film deposition along the arrangement direction thereof. And the other valve is blocked, and the purge valve is opened. The method of claim 1, The control unit, A thin film is deposited on the substrate by chemical vapor deposition using two or more of the N kinds of gases, Thin film deposition apparatus, characterized in that for opening the valve for controlling the supply and blocking of the gas used in the thin film deposition of the N valves provided in the source gas injector. The method of claim 1, The control unit, In the early stage of the thin film deposition process, In order to deposit a thin film on the substrate by atomic layer deposition using two or more different gases of the N kinds of gases, the gas used for the thin film deposition is the substrate while the susceptor is rotating. Repeatedly sprayed onto the substrate, so that the purge gas is sprayed onto the substrate between the sprays of the gas used to deposit the thin film, Only the valves for controlling the supply and shutoff of the corresponding gas among the N valves of the source gas injector are opened by sequentially matching the plurality of source gas injectors with the spraying order of the gases used for the thin film deposition along the arrangement direction thereof. The other valves are shut off, and the purge valve is opened. After the initial stage, A thin film is deposited on the substrate by chemical vapor deposition using two or more of the N kinds of gases, Thin film deposition apparatus, characterized in that for opening the valve for controlling the supply and blocking of the gas used in the thin film deposition of the N valves provided in the source gas injector. The method of claim 4, wherein Each of the source gas injectors is supplied with a reducing gas, a first gas supply pipe provided with a first valve, a boron containing gas, a second gas supply pipe provided with a second valve, and a tungsten-containing precursor. Third gas supply pipes in which the third valve is installed are connected, In the initial stage, In order to form a tungsten nucleation layer on the substrate by atomic layer deposition using a boron-containing gas and a tungsten-containing precursor, the boron-containing gas, the purge gas, the tungsten-containing precursor and the purge gas are sequentially repeatedly sprayed, The second valve of the raw material gas injector arranged in the odd numbered direction is opened and the first valve and the third valve are shut off, and the third valve of the raw material gas injector arranged in the even numbered direction in the arrangement direction is opened and The first valve and the second valve are shut off, the purge valve is opened, After the initial stage, Tungsten thin film is deposited on the substrate by chemical vapor deposition using the reducing gas and the tungsten-containing precursor, Thin film deposition apparatus, characterized in that for opening the first valve and the third valve of the source gas injector, the second valve is blocked. The method of claim 5, The boron-containing gas is diborane (B ₂ H ₆ ), the purge gas is hydrogen (H ₂ ) or ammonia (NH ₃ ), the tungsten-containing precursor is thin film deposition, characterized in that the tungsten fluoride (WF ₆ ) Device. The method according to any one of claims 1 to 6, The raw material gas injector, A first inlets to which a (a is a natural number of 1 or more and less than N) gas supply pipes of the N gas supply pipes are respectively connected, and b (b = N-a) gas supply pipes of the N gas supply pipes, respectively. B second inlets to be provided, and a receiving unit accommodating the gas supplied through the first gas supply pipe and the second gas supply pipe is provided, and a plurality of first injection holes and a plurality of second injection holes are formed in the bottom portion thereof. The shower head body which there is, A plurality of insertion holes are formed in a flat plate shape, and are partitioned into a first buffer part which is installed in a receiving part of the shower head main body and communicates with the first inlet and a second buffer part that communicates with the second inlet. With partition plate to make, It is formed in a hollow shape, one end is connected to the insertion hole and the other end includes a plurality of injection pins connected to the first injection port, The gas introduced into the first injection hole is supplied to the first buffer part and then injected into the substrate through the injection pin, and the gas introduced into the second injection hole is supplied to the second buffer part and then through the second injection hole. Thin film deposition apparatus, characterized in that the dual shower head structure that is sprayed to the substrate.

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