JP3140111U - Gas supply equipment for semiconductor manufacturing equipment - Google Patents
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Abstract
【課題】抵抗率の半導体基板面内均一性を向上させることが可能な半導体製造装置用のガス供給装置を提供する。
【解決手段】半導体製造装置の反応室内部にプロセスガス及びパージガスを導入するためのガス供給装置1は、反応室内部にプロセスガスを導入するためのマニホールド2を有し、マニホールド2には、少なくとも4つのガス供給配管(3,4,5,6)が結合されており、プロセスガスのひとつである添加ガスが、オリフィス7を有する複数の流路に分流されて、ガス供給配管の少なくとも2つを通じてマニホールド2に流入するように構成されたガスラインを備えることを特徴とする。
【選択図】図1A gas supply apparatus for a semiconductor manufacturing apparatus capable of improving the uniformity of resistivity within a semiconductor substrate surface.
A gas supply apparatus (1) for introducing a process gas and a purge gas into a reaction chamber inside a semiconductor manufacturing apparatus has a manifold (2) for introducing the process gas into the reaction chamber, and the manifold (2) includes at least Four gas supply pipes (3, 4, 5, 6) are connected, and an additive gas, which is one of the process gases, is divided into a plurality of flow paths having orifices 7, so that at least two of the gas supply pipes And a gas line configured to flow into the manifold 2.
[Selection] Figure 1
Description
本考案は、半導体製造装置にプロセスガスを供給するためのガス供給装置の構造に関する。 The present invention relates to a structure of a gas supply apparatus for supplying a process gas to a semiconductor manufacturing apparatus.
従来、原子層堆積法(ALD:Atomic Layer Deposition)を用いた金属薄膜の製造が周知である。ALD法は、材料物質膜を一度に単層ずつ形成するものである。そのため、2種類以上のプロセスガスが交互にかつ連続的に導入される。このALDによれば、層の膜厚均一性及び堆積層の整合性が改善されるため、超薄膜ゲートの形成、メタライゼーションのための超薄膜バリア層、シード層の形成などへの応用が期待されている。 Conventionally, the manufacture of a metal thin film using an atomic layer deposition (ALD) is well known. In the ALD method, a material film is formed one layer at a time. For this reason, two or more kinds of process gases are alternately and continuously introduced. According to this ALD, the film thickness uniformity of the layer and the consistency of the deposited layer are improved. Therefore, it is expected to be applied to the formation of ultra-thin gates, ultra-thin barrier layers for metallization, and seed layers. Has been.
ALD法によるタンタル(Ta)系金属薄膜の形成には、プラズマALD法が用いられてきた。その際、前駆体として、TaF5、TaCl5、TBTDET(tris-diethylamino-buthylimino-Tantalum)、TiMata(tertiaryamlimidotris-diethylamino-Tantalum)等のハロゲン系Taまたは有機系Taを用い、反応ガスとしてH2、NH3を用いて、反応ガスの導入時に13.56MHzまたは27MHzの高周波(RF)電力を印加し、半導体基板上にTa系薄膜が堆積される。特に、抵抗率を制御する必要がある場合、添加ガスとして、窒素ガス(N2)が用いられる。 A plasma ALD method has been used to form a tantalum (Ta) metal thin film by the ALD method. At that time, halogen-based Ta or organic Ta such as TaF5, TaCl5, TBTDET (tris-diethylamino-buthylimino-Tantalum), TiMata (tertiaryamlimidotris-diethylamino-Tantalum) is used as a precursor, and H2 and NH3 are used as reaction gases. Then, when introducing the reactive gas, radio frequency (RF) power of 13.56 MHz or 27 MHz is applied, and a Ta-based thin film is deposited on the semiconductor substrate. In particular, when the resistivity needs to be controlled, nitrogen gas (N2) is used as the additive gas.
しかしながら、Ta系膜は成膜時に膜中に取り込まれる窒素原子の量によって抵抗率が大きく変化するため、窒素ガスの流量が増加すると半導体基板面内での抵抗率の均一性が悪くなるという問題があった。 However, since the resistivity of Ta-based films varies greatly depending on the amount of nitrogen atoms taken into the film at the time of film formation, the uniformity of the resistivity in the semiconductor substrate surface deteriorates when the flow rate of nitrogen gas increases. was there.
本願の目的は、半導体基板表面に堆積する膜の抵抗率の面内均一性を向上させることが可能な半導体製造装置用のガス供給装置を提供することである。 The objective of this application is providing the gas supply apparatus for semiconductor manufacturing apparatuses which can improve the in-plane uniformity of the resistivity of the film | membrane deposited on the surface of a semiconductor substrate.
本考案のひとつの態様において、半導体製造装置の反応室内部にプロセスガス及びパージガスを導入するためのガス供給装置は、前記反応室内部に前記プロセスガスを導入するためのマニホールドを有し、前記マニホールドには、少なくとも3つのガス供給配管が結合されており、前記プロセスガスのひとつである添加ガスが、オリフィスを有する複数の流路に分流されて、前記ガス供給配管の少なくとも2つを通じて前記マニホールドに流入するように構成されたガスラインシステムを備えることを特徴とする。 In one aspect of the present invention, a gas supply device for introducing a process gas and a purge gas into a reaction chamber inside a semiconductor manufacturing apparatus has a manifold for introducing the process gas into the reaction chamber, and the manifold Is connected to at least three gas supply pipes, and an additive gas, which is one of the process gases, is divided into a plurality of flow paths having orifices, and is supplied to the manifold through at least two of the gas supply pipes. It comprises a gas line system configured to flow in.
本考案の他の態様において、半導体製造装置の反応室内部に、プロセスガス及びパージガスを導入するためのガス供給装置は、前記反応室内部に前記プロセスガス及びパージガスを導入するためのマニホールドと、前記マニホールドに結合されたガスラインシステムとを備え、前記ガスラインシステムは、前記マニホールドに互いに略等間隔に結合された、第1ガス供給配管、第2ガス供給配管、第3ガス供給配管及び第4ガス供給配管を有し、前記第1ガス供給配管はパージガス供給装置に結合し、前記第2ガス供給配管は二手に分岐し、一方は第1反応ガス供給装置に結合し、他方はオリフィスを介して分流点でさらに二手に分岐し、その一方はパージガス供給装置に結合し、他方は前記プロセスガスのひとつである添加ガス供給装置に結合し、前記第3ガス供給配管は、二手に分岐し、一方は第2反応ガス供給装置に結合し、他方は第2オリフィスを介して前記分流点に結合し、前記第4ガス供給配管は、二手に分岐し、一方は前駆体ガス供給装置に結合し、他方は第3オリフィスを介して前記分流点に結合することを特徴とする。 In another aspect of the present invention, a gas supply device for introducing process gas and purge gas into a reaction chamber inside a semiconductor manufacturing apparatus includes a manifold for introducing the process gas and purge gas into the reaction chamber, A gas line system coupled to a manifold, wherein the gas line system is coupled to the manifold at substantially equal intervals, a first gas supply pipe, a second gas supply pipe, a third gas supply pipe, and a fourth gas supply system. A gas supply pipe, the first gas supply pipe is connected to a purge gas supply apparatus, the second gas supply pipe is bifurcated, one is connected to the first reaction gas supply apparatus, and the other is connected through an orifice. Branching at the branch point, one of which is connected to the purge gas supply device and the other is connected to the additive gas supply device which is one of the process gases. The third gas supply pipe is bifurcated, one is connected to the second reactive gas supply device, the other is connected to the diversion point via the second orifice, and the fourth gas supply pipe is The second branch is one, and one is connected to the precursor gas supply device, and the other is connected to the branch point through the third orifice.
本考案のさらに他の態様において、半導体製造装置の反応室内部に、プロセスガス及びパージガスを導入するためのガス供給装置は、前記反応室内部に前記プロセスガス及びパージガスを導入するためのマニホールドと、前記マニホールドに結合されたガスラインシステムとを備え、前記ガスラインシステムは、前記マニホールドに互いに略等間隔に結合された、第1ガス供給配管、第2ガス供給配管、第3ガス供給配管及び第4ガス供給配管を有し、前記第1ガス供給配管はパージガス供給装置に結合し、前記第2ガス供給配管は二手に分岐し、一方は第1反応ガス供給装置に結合し、他方は第1オリフィスを介して分流点でさらに二手に分岐し、その一方はパージガス供給装置に結合し、他方はさらに二手に分岐し、その一方は前記プロセスガスのひとつである添加ガス供給装置に結合し、他方は第2反応ガス供給装置に結合し、前記第3ガス供給配管は、第2オリフィスを介して、前記分流点に結合し、前記第4ガス供給配管は二手に分岐し、一方は前駆体ガス供給装置に結合し、他方は第3オリフィスを介して前記分流点に結合することを特徴とする。 In still another aspect of the present invention, a gas supply device for introducing a process gas and a purge gas into a reaction chamber inside a semiconductor manufacturing apparatus includes a manifold for introducing the process gas and the purge gas into the reaction chamber, A gas line system coupled to the manifold, wherein the gas line system is coupled to the manifold at substantially equal intervals from each other, the first gas supply pipe, the second gas supply pipe, the third gas supply pipe, and the first gas supply system. 4 gas supply pipes, the first gas supply pipe is coupled to the purge gas supply apparatus, the second gas supply pipe is bifurcated, one is coupled to the first reaction gas supply apparatus, and the other is the first Two further branches at the diversion point through the orifice, one of which is connected to the purge gas supply device and the other is further branched into two. The other gas is connected to the second reaction gas supply device, the third gas supply pipe is connected to the branch point via the second orifice, and the fourth gas is connected to the branch point. The gas supply pipe is bifurcated, one is connected to the precursor gas supply device, and the other is connected to the branch point through the third orifice.
本願によれば、半導体基板表面に堆積する膜の抵抗率の面内均一性を向上させることが可能な半導体製造装置用のガス供給装置を提供することができる。 According to the present application, it is possible to provide a gas supply device for a semiconductor manufacturing apparatus capable of improving the in-plane uniformity of resistivity of a film deposited on the surface of a semiconductor substrate.
以下、図面を参照しながら、本考案の実施形態について説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[考案の第1の実施形態]
図1は、本考案の第1の実施形態に係るガス供給装置を概略的に示したものである。第1の実施形態に係るガス供給装置1は、後述するプラズマALD装置50と結合するマニホールド2と、該マニホールド2に結合された第1ガス供給配管3、第2ガス供給配管4、第3ガス供給配管5、第4ガス供給配管6を含むガスラインシステムとを備えて構成されている。
[First embodiment of the invention]
FIG. 1 schematically shows a gas supply apparatus according to a first embodiment of the present invention. The gas supply apparatus 1 according to the first embodiment includes a
第1ガス供給配管3は、マニホールド2から上流側に向かって、質量流量制御器8を介して、パージガス供給装置(図示せず)に結合されている。パージガスは、例えばアルゴン(Ar)のような不活性ガスである。
The first
第2ガス供給配管4は、マニホールド2から上流側に向かって、分岐点9において二手に分岐し、ガスライン10及びガスライン11となる。ガスライン10の終端は第1反応ガス供給装置(図示せず)に結合されている。ガスライン11には流体の流れを絞るオリフィス7が設けられ、分流点12において二手に分岐し、ガスライン13及びガスライン14となる。ガスライン13は質量流量制御器8を介して、例えばアルゴンガスのようなパージガス供給装置(図示せず)に結合されている。ガスライン14は質量流量制御器8を介して窒素ガス(N2)供給装置(図示せず)に結合されている。
The second
第3ガス供給配管5は、マニホールド2から上流側に向かって、分岐点15において二手に分岐し、ガスライン16及びガスライン17となる。ガスライン16の終端は第2反応ガス供給装置(図示せず)に結合されている。ガスライン17には流体の流れを絞るオリフィス7が設けられ、分岐点18を経て、ガスライン19となる。ガスライン19は分流点12において上記したガスライン13及びガスライン14に分岐する。
The third
第4ガス供給配管6は、マニホールド2から上流側に向かって、分岐点20において二手に分岐し、ガスライン21及びガスライン22となる。ガスライン21の終端は前駆体(プリカーサ)供給装置(図示せず)に結合されている。ガスライン22には流体の流れを絞るオリフィス7が設けられている。ガスライン22は、分岐点18を経て、ガスライン19となり、分流点12に至り、上記したガスライン13及びガスライン14となる。
The fourth
各ガスラインには、バルブ23が適宜設けられる。また、質量流量制御装置8はすべてのガスラインに設けることも可能であり、選択的に特定のガスラインに設けることも可能である。オリフィス7は円環状のものが一般的であるが、流体の流れを絞る機能を有するものであればどのようなものでもよい。
Each gas line is provided with a
本考案の第1の実施形態に係るガス供給装置1のマニホールド2を図2に示す。同図(a)は、マニホールド2の側面図であり、同図(b)はA−A’断面図である。マニホールド2は、略直方体形状を有し、内側中央部に円筒形の空洞24を備える。マニホールド2の4つの側面には、上記した第1、第2、第3、第4ガス供給配管が互いに等間隔で結合されており、それぞれ空洞24と連通している。マニホールド2の形状は、これに限定されず、任意の形状を取りうる。また、ガス供給配管の数は4つに限定されず、反応ガスが1種類の場合には3つでもよい。すなわち、少なくとも3つのガス供給配管を備えればよい。
A
次に、本考案の第1の実施形態に係るガス供給装置1の機能について説明する。N2ガス供給装置から供給されたN2ガスは、質量流量制御器8により所定の流量に制御された後、流量fのN2ガスとなる。流量fのN2ガスが分流点12に流入される。流量fのN2ガスは、分流点12において分流され、ガスライン11、17、22を流れる。これらガスライン11、17、22に設けられたオリフィス7によって、N2ガスは各ガスライン11、17、22を流量f1、f2、f3で流れる。ここで、f=f1+f2+f3であって、f1=f2=f3となるようにオリフィス7を調節する。
Next, functions of the gas supply device 1 according to the first embodiment of the present invention will be described. The N2 gas supplied from the N2 gas supply device is controlled to a predetermined flow rate by the
流量f1のN2ガスは、分岐点9を介して、第2ガス供給配管4を通じてマニホールド2に流入される。流量f2のN2ガスは、分岐点15を介して、第3ガス供給配管5を通じてマニホールド2に流入される。流量f3のN2ガスは、分岐点20を介して、第4ガス供給配管6を通じてマニホールド2に流入される。マニホールド2の内部では、図2(b)に示すように、3方向から均一な流量のN2ガス(流量f1、f2、f3)が流入するため、マニホールド2内部におけるN2ガス濃度の均一性が向上する。ひいては、成膜時に半導体基板上に噴射されるN2ガスの均一性が向上する。
The N2 gas at the flow rate f1 flows into the
また、パージガスであるアルゴンガスArは、質量流量制御8で所定の流量に制御されたのち、ガスライン13を通じて流れ、分流点12で分流される。パージガスは、N2ガスと同様の流路をたどってマニホールド2に至る。
The argon gas Ar, which is a purge gas, is controlled to a predetermined flow rate by the mass
ここで、本考案の第1の実施形態に係るガス供給装置と、従来のガス供給装置との違いについて説明する。図3は、従来のガス供給装置30を概略的に示したものである。第1実施形態と同一の構成要素については、同一符号で示す。
Here, the difference between the gas supply device according to the first embodiment of the present invention and the conventional gas supply device will be described. FIG. 3 schematically shows a conventional
従来のガス供給装置30は、第1実施形態と同様に、マニホールド2と、該マニホールド2に互いに等間隔で結合された4つのガス供給配管とを備える点で第1実施形態と同様であるが、N2ガスは第1ガス供給配管3を通じてのみマニホールド2に流入される点で第1実施形態と異なっている。
Similar to the first embodiment, the conventional
従来のガス供給装置30では、4つのガス供給配管のうち、一つのガス供給配管3のみからN2ガスが供給されるため、N2ガス濃度の均一性が劣る。したがって、従来のガス供給装置30では、成膜時に均一性が高いN2ガスを半導体基板上に噴射することが不可能であった。本考案は、この問題点を解決するべく考案されたものである。
In the conventional
本考案の第1実施形態によれば、N2ガスを分流し、分流したそれぞれのガスラインにオリフィスを設けることにより、マニホールド内でのN2ガス濃度を均一化することができる。結果として、半導体基板に噴射するN2ガス濃度の均一性を向上させることが可能となる。 According to the first embodiment of the present invention, N2 gas is divided and an orifice is provided in each of the divided gas lines, so that the N2 gas concentration in the manifold can be made uniform. As a result, it is possible to improve the uniformity of the N2 gas concentration injected onto the semiconductor substrate.
また、パージガスを供給するガスラインとN2ガスを供給するガスラインとを共有化することにより、装置構造を簡略化することが可能となる。
Further, by sharing the gas line for supplying the purge gas and the gas line for supplying the
[考案の第2の実施形態]
次に、本考案の第2の実施形態に係るガス供給装置について図面を参照して説明する。図4は、第2の実施形態に係るガス供給装置を概略的に示したものである。第2実施形態に係るガス供給装置40は、第2反応ガスを供給するためのガスライン16’が新たに設けられ、該ガスライン16’はN2ガス供給用のガスライン14と分岐点26で結合する点で、第1実施形態と異なる。第1実施形態と同一の構成要素については、同一符号で示す。
[Second Embodiment of the Invention]
Next, a gas supply device according to a second embodiment of the present invention will be described with reference to the drawings. FIG. 4 schematically shows a gas supply device according to the second embodiment. The
ガスライン16’を流れる第2反応ガスは、分岐点26を介して、ガスライン27を流れ、分流点12を介して、ガスライン11、17、22に分流される。ガスライン11、17、22に設けられたオリフィス7により、流量制限された後、ガス供給配管4、5、6を通じて、マニホールド2に流入される。
The second reaction gas flowing through the
その他の機能については、第1実施形態と同様なので説明を省略する。尚、図中、ガスライン16が示されているが、ガスライン16’を使用する場合には省略することができる。
Since other functions are the same as those in the first embodiment, the description thereof is omitted. Although the
本考案の第2実施形態によれば、反応ガス及びN2ガスを分流し、分流したそれぞれのガスラインにオリフィスを設けることにより、マニホールド内での反応ガス及びN2ガスの濃度を均一化することができる。結果として、半導体基板上に噴射する反応ガス及びN2ガス濃度の均一性を向上させることが可能となる。 According to the second embodiment of the present invention, the reactant gas and the N2 gas are divided, and the orifices are provided in the divided gas lines, so that the concentrations of the reactant gas and the N2 gas in the manifold can be made uniform. it can. As a result, it is possible to improve the uniformity of the concentration of the reactive gas and N2 gas injected onto the semiconductor substrate.
また、反応ガス、パージガス及びN2ガスを供給するガスラインを共有化することにより、装置構造を簡略化することが可能となる。
In addition, by sharing a gas line for supplying the reaction gas, purge gas, and
[プラズマALD装置の構造]
次に、本考案の第1の実施形態に係るプラズマALD装置について説明する。図5は、本実施形態に係るプラズマALD装置50の断面を概略的に示したものである。プラズマALD装置50は、リアクタ51と、該リアクタ51内にあって半導体基板52を載置するためのサセプタ53と、該サセプタ53に対向して設置され、半導体基板52に反応ガスを噴射するためのシャワーヘッド54とを備えて構成されている。
[Structure of plasma ALD apparatus]
Next, a plasma ALD apparatus according to the first embodiment of the present invention will be described. FIG. 5 schematically shows a cross section of the
リアクタ51の内部は、ロードロックチャンバ(図示せず)との間で半導体基板52の受け渡しを行うための搬送室55と、プラズマALD反応を生じさせ薄膜を堆積するための反応室56とに区分けされる。搬送室55の底部には、搬送室55内部を真空排気するための排気口57が設けられ、該排気口57はリアクタ外部の真空ポンプ(図示せず)に結合されている。搬送室55は排気口57を通じて真空排気される。反応室56の周囲には環状の排気ダクト58が設けられ、排気ダクト58の側面に設けられた排気口59を通じて反応室56の内部が排気される。
The interior of the
サセプタ53は、例えばアルミニウム合金から成り、その内部には半導体基板52を加熱するためのヒータ(図示せず)が埋設されている。該ヒータは、例えば抵抗加熱型シースヒータである。サセプタ53は、接地されており、プラズマ放電の一方の電極を構成する。サセプタ53は、アルミニウム合金の代わりにセラミック製であってもよい。セラミック製のサセプタは、抵抗加熱型ヒータを一体焼結して製作されたセラミック基体から成る。セラミック基体の素材として、窒化アルミニウム、酸化アルミニウム、酸化マグネシウムなどが挙げられる。
The susceptor 53 is made of, for example, an aluminum alloy, and a heater (not shown) for heating the
サセプタ53と対向する位置に、該サセプタ53と平行にシャワーヘッド54が設置されている。該シャワーヘッド54の下面には反応ガスを半導体基板52に均一に噴射するためのφ0.5mm〜1.0mmの細孔(図示せず)が約1000〜5000個設けられている。該シャワーヘッド54は、高周波発振器60と電気的に接続され、プラズマ放電の一方の電極を構成する。ここで、サセプタ53に高周波発振器を接続し、シャワーヘッド54を接地電位とすることもできる。高周波発振器60は13MHz以上(例えば、13.56MHzまたは27.12MHz)の高周波電力を生成する。シャワーヘッド54の上面略中央部にはガス導入口61が設けられている。シャワーヘッド54の上面には、円板状のインシュレータ62が載置されている。インシュレータ62の略中央部には開口部63が設けられ、該開口部63を介して、ガス導入口61とマニホールド2とが結合されている。シャワーヘッド54の上面にはシャワーヘッド54の内部を排気するための排気口64が設けられている。シャワーヘッド54の内部は、排気口64から、インシュレータ62に設けられた開口部65を介して、真空排気される。
A
[薄膜製造方法の実施形態]
次に、本考案の実施形態にかかる薄膜製造方法について説明する。図6は、本実施形態に係るタンタル系金属薄膜の製造方法のフローチャートを示したものであり、図7はプロセスガス及びパージガスの流量と時間の関係を示すタイミングチャートである。
[Embodiment of Thin Film Manufacturing Method]
Next, a thin film manufacturing method according to an embodiment of the present invention will be described. FIG. 6 shows a flowchart of a method for manufacturing a tantalum-based metal thin film according to this embodiment, and FIG. 7 is a timing chart showing the relationship between the flow rates of process gas and purge gas and time.
まず、工程1として、抵抗率を制御するためのN2ガスの供給を開始する。N2ガスは、上記した本考案の実施形態に係るガス供給装置により分流されかつオリフィスによって均一化されて供給される(ステップ1)。
First, as step 1, supply of
次に、工程2として、前駆体ガスをパルス状に短時間流す(ステップ2)。ここで、前駆体は、例えば、TaF5、TaCl5、TBTDET、TiMata等のハロゲン系Taまたは有機系Taである。
Next, as
次いで、工程3として、パージガスを流し、前駆体ガスをパージする(ステップ3)。パージガスとして、例えば、アルゴンなどの不活性ガスが使用される。
Next, as
次に、工程4として、所定の流量の反応ガスを流すと同時に、高周波電力を印加し、プラズマ反応を生じさせる(ステップ4)。ここで、反応ガスとして、例えば、H2、NH3などが使用される。反応ガスは、1種類でもよく、また2種類以上であってもよい。印加する高周波電力として、例えば13.56MHzまたは27MHzのRF電力が使用される。
Next, as
次いで、工程5として、パージガスを流し、反応ガスをパージする(ステップ5)。
Next, in
上記したように、プラズマALD法は、前駆体ガスと、反応ガスを交互にかつ連続して導入することにより、薄膜を一度に単層ずつ形成する成膜プロセスである。上記した工程2から工程5までを1サイクルとし、これを所定の回数繰り返し実行することにより、所望の膜厚のタンタル系金属薄膜を得ることができる。
As described above, the plasma ALD method is a film forming process in which a precursor gas and a reactive gas are alternately and continuously introduced to form a thin film one layer at a time. A tantalum-based metal thin film having a desired film thickness can be obtained by setting the above-described
工程6として、堆積した薄膜が所望の膜厚に達したか否かを判定し(ステップ6)、所望の膜厚に達していれば、工程7に進み、達していなければステップ2に戻り成膜サイクルを繰り返す。
In
ステップ6で、薄膜が所望の膜厚に達したと判定されると、工程7としてN2ガスの供給を停止し(ステップ7)、成膜プロセスを終了する。
If it is determined in
以下、具体的に評価実験を行ったので説明する。実験は、半導体基板上にタンタル系金属薄膜を堆積させ、添加ガスの流量の変化に対する金属薄膜の抵抗率の変化と半導体基板の面内均一性を評価したものである。 Hereinafter, a specific evaluation experiment was performed and will be described. In the experiment, a tantalum-based metal thin film was deposited on a semiconductor substrate, and the change in resistivity of the metal thin film with respect to the change in the flow rate of the additive gas and the in-plane uniformity of the semiconductor substrate were evaluated.
図8は、添加ガスとしてN2を使用し、図3に示す従来のガス供給装置を使用してプラズマALD法によりタンタル系金属薄膜を成膜した場合の実験結果を示す。図9は、添加ガスとしてN2を使用し、図1に示す本考案の第1実施形態に係るガス供給装置を使用してプラズマALD法によりタンタル系金属薄膜を成膜した場合の実験結果を示す。図10は、添加ガスとしてNH3を使用し、図1に示す本考案の第1実施形態に係るガス供給装置を使用して熱ALD法によりタンタル系金属薄膜を成膜した場合の実験結果を示す。
FIG. 8 shows the experimental results when a tantalum-based metal thin film is formed by plasma ALD using N2 as the additive gas and using the conventional gas supply apparatus shown in FIG. FIG. 9 shows an experimental result in the case where a tantalum-based metal thin film is formed by plasma
図8の実験結果より、従来のガス供給装置を使用した場合には、N2ガスの流量が増加するに従い抵抗率の面内均一性が低下していくことがわかる。これは、従来のガス供給装置では、マニホールドへのN2ガスの流入位置が1箇所であるため、N2ガスの流量の増加とともに、半導体表面全体に均一にN2ガスが供給されにくくなっているためであると考えられる。
From the experimental results of FIG. 8, it can be seen that when the conventional gas supply apparatus is used, the in-plane uniformity of resistivity decreases as the flow rate of
これに対して、図9の実験結果では、N2ガスの流量が増加しても抵抗率の面内均一性が低下することはなく、ほぼ一定に維持されているのがわかる。これは、本考案の第1実施形態に係るガス供給装置では、N2ガスが3つに分流されかつオリフィスによって流量調節されてマニホールドへ流入されるため、N2ガスの流量が増加しても、半導体表面全体に均一にN2ガスが供給されるためであると考えられる。
On the other hand, in the experimental results of FIG. 9, it can be seen that the in-plane uniformity of the resistivity does not decrease even when the flow rate of the
尚、図10の実験結果から、本考案の実施形態に係るガス供給装置を使えば、添加ガスとしてNH3を使用する熱ALDにおいても同様の効果が得られることがわかる。
From the experimental results shown in FIG. 10, it can be seen that the same effect can be obtained in thermal
[その他]
以上、本考案の特定の実施形態について説明してきたが、ここに開示される装置の構造は例示に過ぎず、実用新案登録請求の範囲に記載された本考案の思想から離れることなく、さまざまな修正及び変更が可能であることは当業者の知るところである。
[Others]
Although specific embodiments of the present invention have been described above, the structure of the apparatus disclosed herein is merely an example, and various configurations can be made without departing from the spirit of the present invention described in the claims of the utility model registration. Those skilled in the art know that modifications and changes are possible.
1・・・ガス供給装置、2・・・マニホールド、3・・・第1ガス供給配管、4・・・第2ガス供給配管、5・・・第3ガス供給配管、6・・・第4ガス供給配管、7・・・オリフィス、8・・・質量流量制御器、9・・・分岐点、10、11・・・ガスライン、12・・・分流点、13、14・・・ガスライン、15・・・分岐点、16、17、18、19・・・ガスライン、20・・・分岐点、21、22・・・ガスライン、23・・・バルブ、50・・・プラズマALD装置。
DESCRIPTION OF SYMBOLS 1 ... Gas supply apparatus, 2 ... Manifold, 3 ... 1st gas supply piping, 4 ... 2nd gas supply piping, 5 ... 3rd gas supply piping, 6 ... 4th Gas supply piping, 7 ... orifice, 8 ... mass flow controller, 9 ... branch point, 10, 11 ... gas line, 12 ... branch point, 13, 14 ...
Claims (8)
前記反応室内部に前記プロセスガス及びパージガスを導入するためのマニホールドを有し、
前記マニホールドには、少なくとも3つのガス供給配管が結合されており、
前記プロセスガスのひとつである添加ガスが、オリフィスを有する複数の流路に分流されて、前記ガス供給配管の少なくとも2つを通じて前記マニホールドに流入するように構成されたガスラインシステムを備える、
ことを特徴とするガス供給装置。 A gas supply apparatus for introducing a process gas and a purge gas into a reaction chamber of a semiconductor manufacturing apparatus,
A manifold for introducing the process gas and purge gas into the reaction chamber;
At least three gas supply pipes are coupled to the manifold,
An additive gas that is one of the process gases is divided into a plurality of flow paths having orifices, and includes a gas line system configured to flow into the manifold through at least two of the gas supply pipes;
A gas supply device.
前記反応室内部に前記プロセスガス及びパージガスを導入するためのマニホールドと、
前記マニホールドに結合されたガスラインシステムと、
を備え、
前記ガスラインシステムは、前記マニホールドに互いに略等間隔に結合された、第1ガス供給配管、第2ガス供給配管、第3ガス供給配管及び第4ガス供給配管を有し、
前記第1ガス供給配管はパージガス供給装置に結合し、
前記第2ガス供給配管は二手に分岐し、一方は第1反応ガス供給装置に結合し、他方はオリフィスを介して分流点でさらに二手に分岐し、その一方はパージガス供給装置に結合し、他方は前記プロセスガスのひとつである添加ガス供給装置に結合し、
前記第3ガス供給配管は、二手に分岐し、一方は第2反応ガス供給装置に結合し、他方は第2オリフィスを介して前記分流点に結合し、
前記第4ガス供給配管は、二手に分岐し、一方は前駆体ガス供給装置に結合し、他方は第3オリフィスを介して前記分流点に結合する、
ことを特徴とするガス供給装置。 A gas supply device for introducing a process gas and a purge gas into a reaction chamber of a semiconductor manufacturing apparatus,
A manifold for introducing the process gas and purge gas into the reaction chamber;
A gas line system coupled to the manifold;
With
The gas line system includes a first gas supply pipe, a second gas supply pipe, a third gas supply pipe, and a fourth gas supply pipe that are coupled to the manifold at substantially equal intervals.
The first gas supply pipe is coupled to a purge gas supply device;
The second gas supply pipe is bifurcated, one is coupled to the first reaction gas supply device, the other is further bifurcated at the branch point through the orifice, one of which is coupled to the purge gas supply device, and the other Is coupled to an additive gas supply device which is one of the process gases,
The third gas supply pipe is bifurcated, one is connected to the second reaction gas supply device, and the other is connected to the diversion point through the second orifice,
The fourth gas supply pipe is bifurcated, one is connected to the precursor gas supply device, and the other is connected to the diversion point through a third orifice.
A gas supply device.
前記反応室内部に前記プロセスガス及びパージガスを導入するためのマニホールドと、
前記マニホールドに結合されたガスラインシステムと、
を備え、
前記ガスラインシステムは、前記マニホールドに互いに略等間隔に結合された、第1ガス供給配管、第2ガス供給配管、第3ガス供給配管及び第4ガス供給配管を有し、
前記第1ガス供給配管はパージガス供給装置に結合し、
前記第2ガス供給配管は二手に分岐し、一方は第1反応ガス供給装置に結合し、他方は第1オリフィスを介して分流点でさらに二手に分岐し、その一方はパージガス供給装置に結合し、他方はさらに二手に分岐し、その一方は前記プロセスガスのひとつである添加ガス供給装置に結合し、他方は第2反応ガス供給装置に結合し、
前記第3ガス供給配管は、第2オリフィスを介して、前記分流点に結合し、
前記第4ガス供給配管は二手に分岐し、一方は前駆体ガス供給装置に結合し、他方は第3オリフィスを介して前記分流点に結合する、
ことを特徴とするガス供給装置。 A gas supply device for introducing a process gas and a purge gas into a reaction chamber of a semiconductor manufacturing apparatus,
A manifold for introducing the process gas and purge gas into the reaction chamber;
A gas line system coupled to the manifold;
With
The gas line system includes a first gas supply pipe, a second gas supply pipe, a third gas supply pipe, and a fourth gas supply pipe that are coupled to the manifold at substantially equal intervals.
The first gas supply pipe is coupled to a purge gas supply device;
The second gas supply pipe branches into two hands, one is connected to the first reaction gas supply device, and the other is further branched into two branches at the diversion point through the first orifice, one of which is connected to the purge gas supply device. The other is further divided into two branches, one of which is coupled to an additive gas supply device which is one of the process gases, and the other is coupled to a second reactive gas supply device,
The third gas supply pipe is connected to the diversion point via a second orifice;
The fourth gas supply pipe is bifurcated; one is connected to the precursor gas supply device, and the other is connected to the diversion point through a third orifice;
A gas supply device.
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