JP3140111U - Gas supply equipment for semiconductor manufacturing equipment - Google Patents

Gas supply equipment for semiconductor manufacturing equipment Download PDF

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JP3140111U
JP3140111U JP2007009817U JP2007009817U JP3140111U JP 3140111 U JP3140111 U JP 3140111U JP 2007009817 U JP2007009817 U JP 2007009817U JP 2007009817 U JP2007009817 U JP 2007009817U JP 3140111 U JP3140111 U JP 3140111U
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gas supply
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亮 清水
朗 渡部
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日本エー・エス・エム株式会社
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Abstract

【課題】抵抗率の半導体基板面内均一性を向上させることが可能な半導体製造装置用のガス供給装置を提供する。
【解決手段】半導体製造装置の反応室内部にプロセスガス及びパージガスを導入するためのガス供給装置１は、反応室内部にプロセスガスを導入するためのマニホールド２を有し、マニホールド２には、少なくとも４つのガス供給配管（３，４，５，６）が結合されており、プロセスガスのひとつである添加ガスが、オリフィス７を有する複数の流路に分流されて、ガス供給配管の少なくとも２つを通じてマニホールド２に流入するように構成されたガスラインを備えることを特徴とする。
【選択図】図１A gas supply apparatus for a semiconductor manufacturing apparatus capable of improving the uniformity of resistivity within a semiconductor substrate surface.
A gas supply apparatus (1) for introducing a process gas and a purge gas into a reaction chamber inside a semiconductor manufacturing apparatus has a manifold (2) for introducing the process gas into the reaction chamber, and the manifold (2) includes at least Four gas supply pipes (3, 4, 5, 6) are connected, and an additive gas, which is one of the process gases, is divided into a plurality of flow paths having orifices 7, so that at least two of the gas supply pipes And a gas line configured to flow into the manifold 2.
[Selection] Figure 1

Description

本考案は、半導体製造装置にプロセスガスを供給するためのガス供給装置の構造に関する。   The present invention relates to a structure of a gas supply apparatus for supplying a process gas to a semiconductor manufacturing apparatus.

従来、原子層堆積法（ＡＬＤ：Ａｔｏｍｉｃ Ｌａｙｅｒ Ｄｅｐｏｓｉｔｉｏｎ）を用いた金属薄膜の製造が周知である。ＡＬＤ法は、材料物質膜を一度に単層ずつ形成するものである。そのため、２種類以上のプロセスガスが交互にかつ連続的に導入される。このＡＬＤによれば、層の膜厚均一性及び堆積層の整合性が改善されるため、超薄膜ゲートの形成、メタライゼーションのための超薄膜バリア層、シード層の形成などへの応用が期待されている。   Conventionally, the manufacture of a metal thin film using an atomic layer deposition (ALD) is well known. In the ALD method, a material film is formed one layer at a time. For this reason, two or more kinds of process gases are alternately and continuously introduced. According to this ALD, the film thickness uniformity of the layer and the consistency of the deposited layer are improved. Therefore, it is expected to be applied to the formation of ultra-thin gates, ultra-thin barrier layers for metallization, and seed layers. Has been.

ＡＬＤ法によるタンタル（Ｔａ）系金属薄膜の形成には、プラズマＡＬＤ法が用いられてきた。その際、前駆体として、ＴａＦ５、ＴａＣｌ５、ＴＢＴＤＥＴ（tris-diethylamino-buthylimino-Tantalum）、ＴｉＭａｔａ(tertiaryamlimidotris-diethylamino-Tantalum)等のハロゲン系Ｔａまたは有機系Ｔａを用い、反応ガスとしてＨ２、ＮＨ３を用いて、反応ガスの導入時に１３．５６ＭＨｚまたは２７ＭＨｚの高周波（ＲＦ）電力を印加し、半導体基板上にＴａ系薄膜が堆積される。特に、抵抗率を制御する必要がある場合、添加ガスとして、窒素ガス（Ｎ２）が用いられる。   A plasma ALD method has been used to form a tantalum (Ta) metal thin film by the ALD method. At that time, halogen-based Ta or organic Ta such as TaF5, TaCl5, TBTDET (tris-diethylamino-buthylimino-Tantalum), TiMata (tertiaryamlimidotris-diethylamino-Tantalum) is used as a precursor, and H2 and NH3 are used as reaction gases. Then, when introducing the reactive gas, radio frequency (RF) power of 13.56 MHz or 27 MHz is applied, and a Ta-based thin film is deposited on the semiconductor substrate. In particular, when the resistivity needs to be controlled, nitrogen gas (N2) is used as the additive gas.

しかしながら、Ｔａ系膜は成膜時に膜中に取り込まれる窒素原子の量によって抵抗率が大きく変化するため、窒素ガスの流量が増加すると半導体基板面内での抵抗率の均一性が悪くなるという問題があった。   However, since the resistivity of Ta-based films varies greatly depending on the amount of nitrogen atoms taken into the film at the time of film formation, the uniformity of the resistivity in the semiconductor substrate surface deteriorates when the flow rate of nitrogen gas increases. was there.

本願の目的は、半導体基板表面に堆積する膜の抵抗率の面内均一性を向上させることが可能な半導体製造装置用のガス供給装置を提供することである。   The objective of this application is providing the gas supply apparatus for semiconductor manufacturing apparatuses which can improve the in-plane uniformity of the resistivity of the film | membrane deposited on the surface of a semiconductor substrate.

本考案のひとつの態様において、半導体製造装置の反応室内部にプロセスガス及びパージガスを導入するためのガス供給装置は、前記反応室内部に前記プロセスガスを導入するためのマニホールドを有し、前記マニホールドには、少なくとも３つのガス供給配管が結合されており、前記プロセスガスのひとつである添加ガスが、オリフィスを有する複数の流路に分流されて、前記ガス供給配管の少なくとも２つを通じて前記マニホールドに流入するように構成されたガスラインシステムを備えることを特徴とする。   In one aspect of the present invention, a gas supply device for introducing a process gas and a purge gas into a reaction chamber inside a semiconductor manufacturing apparatus has a manifold for introducing the process gas into the reaction chamber, and the manifold Is connected to at least three gas supply pipes, and an additive gas, which is one of the process gases, is divided into a plurality of flow paths having orifices, and is supplied to the manifold through at least two of the gas supply pipes. It comprises a gas line system configured to flow in.

本考案の他の態様において、半導体製造装置の反応室内部に、プロセスガス及びパージガスを導入するためのガス供給装置は、前記反応室内部に前記プロセスガス及びパージガスを導入するためのマニホールドと、前記マニホールドに結合されたガスラインシステムとを備え、前記ガスラインシステムは、前記マニホールドに互いに略等間隔に結合された、第１ガス供給配管、第２ガス供給配管、第３ガス供給配管及び第４ガス供給配管を有し、前記第１ガス供給配管はパージガス供給装置に結合し、前記第２ガス供給配管は二手に分岐し、一方は第１反応ガス供給装置に結合し、他方はオリフィスを介して分流点でさらに二手に分岐し、その一方はパージガス供給装置に結合し、他方は前記プロセスガスのひとつである添加ガス供給装置に結合し、前記第３ガス供給配管は、二手に分岐し、一方は第２反応ガス供給装置に結合し、他方は第２オリフィスを介して前記分流点に結合し、前記第４ガス供給配管は、二手に分岐し、一方は前駆体ガス供給装置に結合し、他方は第３オリフィスを介して前記分流点に結合することを特徴とする。   In another aspect of the present invention, a gas supply device for introducing process gas and purge gas into a reaction chamber inside a semiconductor manufacturing apparatus includes a manifold for introducing the process gas and purge gas into the reaction chamber, A gas line system coupled to a manifold, wherein the gas line system is coupled to the manifold at substantially equal intervals, a first gas supply pipe, a second gas supply pipe, a third gas supply pipe, and a fourth gas supply system. A gas supply pipe, the first gas supply pipe is connected to a purge gas supply apparatus, the second gas supply pipe is bifurcated, one is connected to the first reaction gas supply apparatus, and the other is connected through an orifice. Branching at the branch point, one of which is connected to the purge gas supply device and the other is connected to the additive gas supply device which is one of the process gases. The third gas supply pipe is bifurcated, one is connected to the second reactive gas supply device, the other is connected to the diversion point via the second orifice, and the fourth gas supply pipe is The second branch is one, and one is connected to the precursor gas supply device, and the other is connected to the branch point through the third orifice.

本考案のさらに他の態様において、半導体製造装置の反応室内部に、プロセスガス及びパージガスを導入するためのガス供給装置は、前記反応室内部に前記プロセスガス及びパージガスを導入するためのマニホールドと、前記マニホールドに結合されたガスラインシステムとを備え、前記ガスラインシステムは、前記マニホールドに互いに略等間隔に結合された、第１ガス供給配管、第２ガス供給配管、第３ガス供給配管及び第４ガス供給配管を有し、前記第１ガス供給配管はパージガス供給装置に結合し、前記第２ガス供給配管は二手に分岐し、一方は第１反応ガス供給装置に結合し、他方は第１オリフィスを介して分流点でさらに二手に分岐し、その一方はパージガス供給装置に結合し、他方はさらに二手に分岐し、その一方は前記プロセスガスのひとつである添加ガス供給装置に結合し、他方は第２反応ガス供給装置に結合し、前記第３ガス供給配管は、第２オリフィスを介して、前記分流点に結合し、前記第４ガス供給配管は二手に分岐し、一方は前駆体ガス供給装置に結合し、他方は第３オリフィスを介して前記分流点に結合することを特徴とする。   In still another aspect of the present invention, a gas supply device for introducing a process gas and a purge gas into a reaction chamber inside a semiconductor manufacturing apparatus includes a manifold for introducing the process gas and the purge gas into the reaction chamber, A gas line system coupled to the manifold, wherein the gas line system is coupled to the manifold at substantially equal intervals from each other, the first gas supply pipe, the second gas supply pipe, the third gas supply pipe, and the first gas supply system. 4 gas supply pipes, the first gas supply pipe is coupled to the purge gas supply apparatus, the second gas supply pipe is bifurcated, one is coupled to the first reaction gas supply apparatus, and the other is the first Two further branches at the diversion point through the orifice, one of which is connected to the purge gas supply device and the other is further branched into two. The other gas is connected to the second reaction gas supply device, the third gas supply pipe is connected to the branch point via the second orifice, and the fourth gas is connected to the branch point. The gas supply pipe is bifurcated, one is connected to the precursor gas supply device, and the other is connected to the branch point through the third orifice.

本願によれば、半導体基板表面に堆積する膜の抵抗率の面内均一性を向上させることが可能な半導体製造装置用のガス供給装置を提供することができる。   According to the present application, it is possible to provide a gas supply device for a semiconductor manufacturing apparatus capable of improving the in-plane uniformity of resistivity of a film deposited on the surface of a semiconductor substrate.

以下、図面を参照しながら、本考案の実施形態について説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings.

［考案の第１の実施形態］
図１は、本考案の第1の実施形態に係るガス供給装置を概略的に示したものである。第１の実施形態に係るガス供給装置１は、後述するプラズマＡＬＤ装置５０と結合するマニホールド２と、該マニホールド２に結合された第1ガス供給配管３、第２ガス供給配管４、第３ガス供給配管５、第４ガス供給配管６を含むガスラインシステムとを備えて構成されている。 [First embodiment of the invention]
FIG. 1 schematically shows a gas supply apparatus according to a first embodiment of the present invention. The gas supply apparatus 1 according to the first embodiment includes a manifold 2 coupled to a plasma ALD apparatus 50 described later, a first gas supply pipe 3, a second gas supply pipe 4, and a third gas coupled to the manifold 2. And a gas line system including a supply pipe 5 and a fourth gas supply pipe 6.

第１ガス供給配管３は、マニホールド２から上流側に向かって、質量流量制御器８を介して、パージガス供給装置（図示せず）に結合されている。パージガスは、例えばアルゴン（Ａｒ）のような不活性ガスである。   The first gas supply pipe 3 is connected to a purge gas supply device (not shown) via a mass flow controller 8 from the manifold 2 toward the upstream side. The purge gas is an inert gas such as argon (Ar).

第２ガス供給配管４は、マニホールド２から上流側に向かって、分岐点９において二手に分岐し、ガスライン１０及びガスライン１１となる。ガスライン１０の終端は第１反応ガス供給装置（図示せず）に結合されている。ガスライン１１には流体の流れを絞るオリフィス７が設けられ、分流点１２において二手に分岐し、ガスライン１３及びガスライン１４となる。ガスライン１３は質量流量制御器８を介して、例えばアルゴンガスのようなパージガス供給装置（図示せず）に結合されている。ガスライン１４は質量流量制御器８を介して窒素ガス（Ｎ２）供給装置（図示せず）に結合されている。   The second gas supply pipe 4 is bifurcated at the branch point 9 from the manifold 2 toward the upstream side to become a gas line 10 and a gas line 11. The end of the gas line 10 is coupled to a first reaction gas supply device (not shown). The gas line 11 is provided with an orifice 7 for restricting the flow of the fluid. The gas line 13 is coupled via a mass flow controller 8 to a purge gas supply device (not shown) such as argon gas. The gas line 14 is coupled via a mass flow controller 8 to a nitrogen gas (N2) supply device (not shown).

第3ガス供給配管５は、マニホールド２から上流側に向かって、分岐点１５において二手に分岐し、ガスライン１６及びガスライン１７となる。ガスライン１６の終端は第２反応ガス供給装置（図示せず）に結合されている。ガスライン１７には流体の流れを絞るオリフィス７が設けられ、分岐点１８を経て、ガスライン１９となる。ガスライン１９は分流点１２において上記したガスライン１３及びガスライン１４に分岐する。   The third gas supply pipe 5 is bifurcated at the branch point 15 from the manifold 2 toward the upstream side to form a gas line 16 and a gas line 17. The end of the gas line 16 is coupled to a second reaction gas supply device (not shown). The gas line 17 is provided with an orifice 7 for restricting the flow of fluid, and becomes a gas line 19 through a branch point 18. The gas line 19 branches to the gas line 13 and the gas line 14 at the branch point 12.

第４ガス供給配管６は、マニホールド２から上流側に向かって、分岐点２０において二手に分岐し、ガスライン２１及びガスライン２２となる。ガスライン２１の終端は前駆体（プリカーサ）供給装置（図示せず）に結合されている。ガスライン２２には流体の流れを絞るオリフィス７が設けられている。ガスライン２２は、分岐点１８を経て、ガスライン１９となり、分流点１２に至り、上記したガスライン１３及びガスライン１４となる。   The fourth gas supply pipe 6 is bifurcated at the branch point 20 from the manifold 2 toward the upstream side to become a gas line 21 and a gas line 22. The end of the gas line 21 is coupled to a precursor supply device (not shown). The gas line 22 is provided with an orifice 7 for restricting the flow of fluid. The gas line 22 passes through the branch point 18 to become the gas line 19, reaches the branch point 12, and becomes the gas line 13 and the gas line 14 described above.

各ガスラインには、バルブ２３が適宜設けられる。また、質量流量制御装置８はすべてのガスラインに設けることも可能であり、選択的に特定のガスラインに設けることも可能である。オリフィス７は円環状のものが一般的であるが、流体の流れを絞る機能を有するものであればどのようなものでもよい。   Each gas line is provided with a valve 23 as appropriate. Further, the mass flow rate control device 8 can be provided in all the gas lines, or can be selectively provided in a specific gas line. The orifice 7 is generally an annular one, but may be any as long as it has a function of restricting the flow of fluid.

本考案の第１の実施形態に係るガス供給装置１のマニホールド２を図２に示す。同図（ａ）は、マニホールド２の側面図であり、同図（ｂ）はＡ−Ａ’断面図である。マニホールド２は、略直方体形状を有し、内側中央部に円筒形の空洞２４を備える。マニホールド２の４つの側面には、上記した第１、第２、第３、第４ガス供給配管が互いに等間隔で結合されており、それぞれ空洞２４と連通している。マニホールド２の形状は、これに限定されず、任意の形状を取りうる。また、ガス供給配管の数は４つに限定されず、反応ガスが１種類の場合には３つでもよい。すなわち、少なくとも３つのガス供給配管を備えればよい。   A manifold 2 of the gas supply device 1 according to the first embodiment of the present invention is shown in FIG. FIG. 4A is a side view of the manifold 2, and FIG. 4B is a cross-sectional view taken along line A-A '. The manifold 2 has a substantially rectangular parallelepiped shape, and includes a cylindrical cavity 24 at an inner central portion. The first, second, third, and fourth gas supply pipes described above are coupled to the four side surfaces of the manifold 2 at equal intervals, and communicate with the cavity 24, respectively. The shape of the manifold 2 is not limited to this, and can take any shape. Further, the number of gas supply pipes is not limited to four, and may be three when there is one kind of reaction gas. That is, at least three gas supply pipes may be provided.

次に、本考案の第1の実施形態に係るガス供給装置１の機能について説明する。Ｎ２ガス供給装置から供給されたＮ２ガスは、質量流量制御器８により所定の流量に制御された後、流量ｆのＮ２ガスとなる。流量ｆのＮ２ガスが分流点１２に流入される。流量ｆのＮ２ガスは、分流点１２において分流され、ガスライン１１、１７、２２を流れる。これらガスライン１１、１７、２２に設けられたオリフィス７によって、Ｎ２ガスは各ガスライン１１、１７、２２を流量ｆ１、ｆ２、ｆ３で流れる。ここで、ｆ＝ｆ１＋ｆ２＋ｆ３であって、ｆ１＝ｆ２＝ｆ３となるようにオリフィス７を調節する。   Next, functions of the gas supply device 1 according to the first embodiment of the present invention will be described. The N2 gas supplied from the N2 gas supply device is controlled to a predetermined flow rate by the mass flow controller 8 and then becomes N2 gas having a flow rate f. N 2 gas having a flow rate f is introduced into the diversion point 12. The N2 gas having a flow rate f is diverted at the diversion point 12 and flows through the gas lines 11, 17, and 22. N2 gas flows through the gas lines 11, 17, and 22 at flow rates f1, f2, and f3 through the orifices 7 provided in the gas lines 11, 17, and 22, respectively. Here, the orifice 7 is adjusted so that f = f1 + f2 + f3 and f1 = f2 = f3.

流量ｆ１のＮ２ガスは、分岐点９を介して、第２ガス供給配管４を通じてマニホールド２に流入される。流量ｆ２のＮ２ガスは、分岐点１５を介して、第３ガス供給配管５を通じてマニホールド２に流入される。流量ｆ３のＮ２ガスは、分岐点２０を介して、第４ガス供給配管６を通じてマニホールド２に流入される。マニホールド２の内部では、図２（ｂ）に示すように、３方向から均一な流量のＮ２ガス（流量ｆ１、ｆ２、ｆ３）が流入するため、マニホールド２内部におけるＮ２ガス濃度の均一性が向上する。ひいては、成膜時に半導体基板上に噴射されるＮ２ガスの均一性が向上する。   The N2 gas at the flow rate f1 flows into the manifold 2 through the second gas supply pipe 4 via the branch point 9. The N 2 gas at the flow rate f 2 flows into the manifold 2 through the third gas supply pipe 5 via the branch point 15. The N2 gas at the flow rate f3 flows into the manifold 2 through the fourth gas supply pipe 6 via the branch point 20. Inside the manifold 2, as shown in FIG. 2 (b), N2 gas (flow rates f1, f2, f3) having a uniform flow rate from three directions flows, so that the uniformity of the N2 gas concentration in the manifold 2 is improved. To do. As a result, the uniformity of the N 2 gas injected onto the semiconductor substrate during film formation is improved.

また、パージガスであるアルゴンガスＡｒは、質量流量制御８で所定の流量に制御されたのち、ガスライン１３を通じて流れ、分流点１２で分流される。パージガスは、Ｎ２ガスと同様の流路をたどってマニホールド２に至る。   The argon gas Ar, which is a purge gas, is controlled to a predetermined flow rate by the mass flow rate control 8, then flows through the gas line 13, and is diverted at the diversion point 12. The purge gas follows the same flow path as the N 2 gas and reaches the manifold 2.

ここで、本考案の第１の実施形態に係るガス供給装置と、従来のガス供給装置との違いについて説明する。図３は、従来のガス供給装置３０を概略的に示したものである。第１実施形態と同一の構成要素については、同一符号で示す。   Here, the difference between the gas supply device according to the first embodiment of the present invention and the conventional gas supply device will be described. FIG. 3 schematically shows a conventional gas supply device 30. The same components as those in the first embodiment are denoted by the same reference numerals.

従来のガス供給装置３０は、第１実施形態と同様に、マニホールド２と、該マニホールド２に互いに等間隔で結合された４つのガス供給配管とを備える点で第１実施形態と同様であるが、Ｎ２ガスは第１ガス供給配管３を通じてのみマニホールド２に流入される点で第１実施形態と異なっている。   Similar to the first embodiment, the conventional gas supply device 30 is similar to the first embodiment in that it includes a manifold 2 and four gas supply pipes coupled to the manifold 2 at equal intervals. , N2 gas is different from the first embodiment in that it flows into the manifold 2 only through the first gas supply pipe 3.

従来のガス供給装置３０では、４つのガス供給配管のうち、一つのガス供給配管３のみからＮ２ガスが供給されるため、Ｎ２ガス濃度の均一性が劣る。したがって、従来のガス供給装置３０では、成膜時に均一性が高いＮ２ガスを半導体基板上に噴射することが不可能であった。本考案は、この問題点を解決するべく考案されたものである。   In the conventional gas supply apparatus 30, since N2 gas is supplied from only one gas supply pipe 3 among the four gas supply pipes, the uniformity of the N2 gas concentration is inferior. Therefore, in the conventional gas supply apparatus 30, it was impossible to inject N2 gas with high uniformity onto the semiconductor substrate during film formation. The present invention has been devised to solve this problem.

本考案の第1実施形態によれば、Ｎ２ガスを分流し、分流したそれぞれのガスラインにオリフィスを設けることにより、マニホールド内でのＮ２ガス濃度を均一化することができる。結果として、半導体基板に噴射するＮ２ガス濃度の均一性を向上させることが可能となる。   According to the first embodiment of the present invention, N2 gas is divided and an orifice is provided in each of the divided gas lines, so that the N2 gas concentration in the manifold can be made uniform. As a result, it is possible to improve the uniformity of the N2 gas concentration injected onto the semiconductor substrate.

また、パージガスを供給するガスラインとＮ２ガスを供給するガスラインとを共有化することにより、装置構造を簡略化することが可能となる。   Further, by sharing the gas line for supplying the purge gas and the gas line for supplying the N 2 gas, the structure of the apparatus can be simplified.

［考案の第２の実施形態］
次に、本考案の第２の実施形態に係るガス供給装置について図面を参照して説明する。図４は、第２の実施形態に係るガス供給装置を概略的に示したものである。第２実施形態に係るガス供給装置４０は、第２反応ガスを供給するためのガスライン１６’が新たに設けられ、該ガスライン１６’はＮ２ガス供給用のガスライン１４と分岐点２６で結合する点で、第１実施形態と異なる。第１実施形態と同一の構成要素については、同一符号で示す。 [Second Embodiment of the Invention]
Next, a gas supply device according to a second embodiment of the present invention will be described with reference to the drawings. FIG. 4 schematically shows a gas supply device according to the second embodiment. The gas supply apparatus 40 according to the second embodiment is newly provided with a gas line 16 ′ for supplying a second reaction gas, and the gas line 16 ′ includes a gas line 14 for supplying N 2 gas and a branch point 26. It differs from the first embodiment in that it is coupled. The same components as those in the first embodiment are denoted by the same reference numerals.

ガスライン１６’を流れる第２反応ガスは、分岐点２６を介して、ガスライン２７を流れ、分流点１２を介して、ガスライン１１、１７、２２に分流される。ガスライン１１、１７、２２に設けられたオリフィス７により、流量制限された後、ガス供給配管４、５、６を通じて、マニホールド２に流入される。   The second reaction gas flowing through the gas line 16 ′ flows through the gas line 27 via the branch point 26, and is branched into the gas lines 11, 17, and 22 through the branch point 12. After the flow rate is restricted by the orifices 7 provided in the gas lines 11, 17, and 22, the gas flows into the manifold 2 through the gas supply pipes 4, 5, and 6.

その他の機能については、第１実施形態と同様なので説明を省略する。尚、図中、ガスライン１６が示されているが、ガスライン１６’を使用する場合には省略することができる。   Since other functions are the same as those in the first embodiment, the description thereof is omitted. Although the gas line 16 is shown in the figure, it can be omitted when the gas line 16 'is used.

本考案の第２実施形態によれば、反応ガス及びＮ２ガスを分流し、分流したそれぞれのガスラインにオリフィスを設けることにより、マニホールド内での反応ガス及びＮ２ガスの濃度を均一化することができる。結果として、半導体基板上に噴射する反応ガス及びＮ２ガス濃度の均一性を向上させることが可能となる。   According to the second embodiment of the present invention, the reactant gas and the N2 gas are divided, and the orifices are provided in the divided gas lines, so that the concentrations of the reactant gas and the N2 gas in the manifold can be made uniform. it can. As a result, it is possible to improve the uniformity of the concentration of the reactive gas and N2 gas injected onto the semiconductor substrate.

また、反応ガス、パージガス及びＮ２ガスを供給するガスラインを共有化することにより、装置構造を簡略化することが可能となる。   In addition, by sharing a gas line for supplying the reaction gas, purge gas, and N 2 gas, the structure of the apparatus can be simplified.

［プラズマＡＬＤ装置の構造］
次に、本考案の第１の実施形態に係るプラズマＡＬＤ装置について説明する。図５は、本実施形態に係るプラズマＡＬＤ装置５０の断面を概略的に示したものである。プラズマＡＬＤ装置５０は、リアクタ５１と、該リアクタ５１内にあって半導体基板５２を載置するためのサセプタ５３と、該サセプタ５３に対向して設置され、半導体基板５２に反応ガスを噴射するためのシャワーヘッド５４とを備えて構成されている。 [Structure of plasma ALD apparatus]
Next, a plasma ALD apparatus according to the first embodiment of the present invention will be described. FIG. 5 schematically shows a cross section of the plasma ALD apparatus 50 according to the present embodiment. The plasma ALD apparatus 50 is installed in a reactor 51, a susceptor 53 for placing a semiconductor substrate 52 in the reactor 51, and opposed to the susceptor 53, for injecting a reaction gas to the semiconductor substrate 52. The shower head 54 is provided.

リアクタ５１の内部は、ロードロックチャンバ（図示せず）との間で半導体基板５２の受け渡しを行うための搬送室５５と、プラズマＡＬＤ反応を生じさせ薄膜を堆積するための反応室５６とに区分けされる。搬送室５５の底部には、搬送室５５内部を真空排気するための排気口５７が設けられ、該排気口５７はリアクタ外部の真空ポンプ（図示せず）に結合されている。搬送室５５は排気口５７を通じて真空排気される。反応室５６の周囲には環状の排気ダクト５８が設けられ、排気ダクト５８の側面に設けられた排気口５９を通じて反応室５６の内部が排気される。   The interior of the reactor 51 is divided into a transfer chamber 55 for transferring the semiconductor substrate 52 to and from a load lock chamber (not shown) and a reaction chamber 56 for generating a plasma ALD reaction and depositing a thin film. Is done. An exhaust port 57 for evacuating the interior of the transfer chamber 55 is provided at the bottom of the transfer chamber 55, and the exhaust port 57 is connected to a vacuum pump (not shown) outside the reactor. The transfer chamber 55 is evacuated through an exhaust port 57. An annular exhaust duct 58 is provided around the reaction chamber 56, and the inside of the reaction chamber 56 is exhausted through an exhaust port 59 provided on a side surface of the exhaust duct 58.

サセプタ５３は、例えばアルミニウム合金から成り、その内部には半導体基板５２を加熱するためのヒータ（図示せず）が埋設されている。該ヒータは、例えば抵抗加熱型シースヒータである。サセプタ５３は、接地されており、プラズマ放電の一方の電極を構成する。サセプタ５３は、アルミニウム合金の代わりにセラミック製であってもよい。セラミック製のサセプタは、抵抗加熱型ヒータを一体焼結して製作されたセラミック基体から成る。セラミック基体の素材として、窒化アルミニウム、酸化アルミニウム、酸化マグネシウムなどが挙げられる。   The susceptor 53 is made of, for example, an aluminum alloy, and a heater (not shown) for heating the semiconductor substrate 52 is embedded therein. The heater is, for example, a resistance heating type sheath heater. The susceptor 53 is grounded and constitutes one electrode of plasma discharge. The susceptor 53 may be made of ceramic instead of an aluminum alloy. A ceramic susceptor is formed of a ceramic substrate manufactured by integrally sintering a resistance heating type heater. Examples of the material for the ceramic substrate include aluminum nitride, aluminum oxide, and magnesium oxide.

サセプタ５３と対向する位置に、該サセプタ５３と平行にシャワーヘッド５４が設置されている。該シャワーヘッド５４の下面には反応ガスを半導体基板５２に均一に噴射するためのφ０．５mm〜１．０mmの細孔（図示せず）が約１０００〜５０００個設けられている。該シャワーヘッド５４は、高周波発振器６０と電気的に接続され、プラズマ放電の一方の電極を構成する。ここで、サセプタ５３に高周波発振器を接続し、シャワーヘッド５４を接地電位とすることもできる。高周波発振器６０は１３ＭＨｚ以上（例えば、１３．５６ＭＨｚまたは２７．１２ＭＨｚ）の高周波電力を生成する。シャワーヘッド５４の上面略中央部にはガス導入口６１が設けられている。シャワーヘッド５４の上面には、円板状のインシュレータ６２が載置されている。インシュレータ６２の略中央部には開口部６３が設けられ、該開口部６３を介して、ガス導入口６１とマニホールド２とが結合されている。シャワーヘッド５４の上面にはシャワーヘッド５４の内部を排気するための排気口６４が設けられている。シャワーヘッド５４の内部は、排気口６４から、インシュレータ６２に設けられた開口部６５を介して、真空排気される。   A shower head 54 is installed in parallel to the susceptor 53 at a position facing the susceptor 53. On the lower surface of the shower head 54, about 1000 to 5000 fine holes (not shown) having a diameter of 0.5 mm to 1.0 mm for uniformly injecting the reaction gas onto the semiconductor substrate 52 are provided. The shower head 54 is electrically connected to the high frequency oscillator 60 and constitutes one electrode of plasma discharge. Here, a high frequency oscillator can be connected to the susceptor 53, and the shower head 54 can be set to the ground potential. The high frequency oscillator 60 generates high frequency power of 13 MHz or higher (for example, 13.56 MHz or 27.12 MHz). A gas introduction port 61 is provided at a substantially central portion of the upper surface of the shower head 54. A disk-shaped insulator 62 is placed on the upper surface of the shower head 54. An opening 63 is provided in a substantially central portion of the insulator 62, and the gas introduction port 61 and the manifold 2 are coupled to each other through the opening 63. An exhaust port 64 for exhausting the inside of the shower head 54 is provided on the upper surface of the shower head 54. The inside of the shower head 54 is evacuated from an exhaust port 64 through an opening 65 provided in the insulator 62.

［薄膜製造方法の実施形態］
次に、本考案の実施形態にかかる薄膜製造方法について説明する。図６は、本実施形態に係るタンタル系金属薄膜の製造方法のフローチャートを示したものであり、図７はプロセスガス及びパージガスの流量と時間の関係を示すタイミングチャートである。 [Embodiment of Thin Film Manufacturing Method]
Next, a thin film manufacturing method according to an embodiment of the present invention will be described. FIG. 6 shows a flowchart of a method for manufacturing a tantalum-based metal thin film according to this embodiment, and FIG. 7 is a timing chart showing the relationship between the flow rates of process gas and purge gas and time.

まず、工程１として、抵抗率を制御するためのＮ２ガスの供給を開始する。Ｎ２ガスは、上記した本考案の実施形態に係るガス供給装置により分流されかつオリフィスによって均一化されて供給される（ステップ１）。   First, as step 1, supply of N 2 gas for controlling the resistivity is started. The N2 gas is diverted by the gas supply device according to the above-described embodiment of the present invention and is uniformly supplied by the orifice (step 1).

次に、工程２として、前駆体ガスをパルス状に短時間流す（ステップ２）。ここで、前駆体は、例えば、ＴａＦ５、ＴａＣｌ５、ＴＢＴＤＥＴ、ＴｉＭａｔａ等のハロゲン系Ｔａまたは有機系Ｔａである。   Next, as step 2, the precursor gas is flowed in a pulsed form for a short time (step 2). Here, the precursor is, for example, a halogen-based Ta or an organic Ta such as TaF5, TaCl5, TBTDET, or TiMata.

次いで、工程３として、パージガスを流し、前駆体ガスをパージする（ステップ３）。パージガスとして、例えば、アルゴンなどの不活性ガスが使用される。   Next, as step 3, a purge gas is flowed to purge the precursor gas (step 3). As the purge gas, for example, an inert gas such as argon is used.

次に、工程４として、所定の流量の反応ガスを流すと同時に、高周波電力を印加し、プラズマ反応を生じさせる（ステップ４）。ここで、反応ガスとして、例えば、Ｈ２、ＮＨ３などが使用される。反応ガスは、１種類でもよく、また２種類以上であってもよい。印加する高周波電力として、例えば１３．５６ＭＨｚまたは２７ＭＨｚのＲＦ電力が使用される。   Next, as Step 4, a reaction gas having a predetermined flow rate is flowed, and at the same time, a high frequency power is applied to cause a plasma reaction (Step 4). Here, for example, H2, NH3, or the like is used as the reactive gas. The reaction gas may be one type or two or more types. As the high frequency power to be applied, for example, RF power of 13.56 MHz or 27 MHz is used.

次いで、工程５として、パージガスを流し、反応ガスをパージする（ステップ５）。   Next, in step 5, purge gas is flowed to purge the reaction gas (step 5).

上記したように、プラズマＡＬＤ法は、前駆体ガスと、反応ガスを交互にかつ連続して導入することにより、薄膜を一度に単層ずつ形成する成膜プロセスである。上記した工程２から工程５までを１サイクルとし、これを所定の回数繰り返し実行することにより、所望の膜厚のタンタル系金属薄膜を得ることができる。   As described above, the plasma ALD method is a film forming process in which a precursor gas and a reactive gas are alternately and continuously introduced to form a thin film one layer at a time. A tantalum-based metal thin film having a desired film thickness can be obtained by setting the above-described steps 2 to 5 as one cycle and repeating this a predetermined number of times.

工程６として、堆積した薄膜が所望の膜厚に達したか否かを判定し（ステップ６）、所望の膜厚に達していれば、工程７に進み、達していなければステップ２に戻り成膜サイクルを繰り返す。   In step 6, it is determined whether or not the deposited thin film has reached a desired film thickness (step 6). If the desired film thickness has been reached, the process proceeds to step 7, and if not, the process returns to step 2. Repeat the membrane cycle.

ステップ６で、薄膜が所望の膜厚に達したと判定されると、工程７としてＮ２ガスの供給を停止し（ステップ７）、成膜プロセスを終了する。   If it is determined in step 6 that the thin film has reached the desired film thickness, the supply of N 2 gas is stopped in step 7 (step 7), and the film forming process is terminated.

以下、具体的に評価実験を行ったので説明する。実験は、半導体基板上にタンタル系金属薄膜を堆積させ、添加ガスの流量の変化に対する金属薄膜の抵抗率の変化と半導体基板の面内均一性を評価したものである。   Hereinafter, a specific evaluation experiment was performed and will be described. In the experiment, a tantalum-based metal thin film was deposited on a semiconductor substrate, and the change in resistivity of the metal thin film with respect to the change in the flow rate of the additive gas and the in-plane uniformity of the semiconductor substrate were evaluated.

図８は、添加ガスとしてＮ２を使用し、図３に示す従来のガス供給装置を使用してプラズマＡＬＤ法によりタンタル系金属薄膜を成膜した場合の実験結果を示す。図９は、添加ガスとしてＮ２を使用し、図１に示す本考案の第1実施形態に係るガス供給装置を使用してプラズマＡＬＤ法によりタンタル系金属薄膜を成膜した場合の実験結果を示す。図１０は、添加ガスとしてＮＨ３を使用し、図１に示す本考案の第1実施形態に係るガス供給装置を使用して熱ＡＬＤ法によりタンタル系金属薄膜を成膜した場合の実験結果を示す。   FIG. 8 shows the experimental results when a tantalum-based metal thin film is formed by plasma ALD using N2 as the additive gas and using the conventional gas supply apparatus shown in FIG. FIG. 9 shows an experimental result in the case where a tantalum-based metal thin film is formed by plasma ALD using N 2 as an additive gas and using the gas supply apparatus according to the first embodiment of the present invention shown in FIG. . FIG. 10 shows an experimental result when NH3 is used as an additive gas and a tantalum-based metal thin film is formed by a thermal ALD method using the gas supply apparatus according to the first embodiment of the present invention shown in FIG. .

図８の実験結果より、従来のガス供給装置を使用した場合には、Ｎ２ガスの流量が増加するに従い抵抗率の面内均一性が低下していくことがわかる。これは、従来のガス供給装置では、マニホールドへのＮ２ガスの流入位置が１箇所であるため、Ｎ２ガスの流量の増加とともに、半導体表面全体に均一にＮ２ガスが供給されにくくなっているためであると考えられる。   From the experimental results of FIG. 8, it can be seen that when the conventional gas supply apparatus is used, the in-plane uniformity of resistivity decreases as the flow rate of N 2 gas increases. This is because in the conventional gas supply device, the N2 gas flows into the manifold at one location, and therefore, as the flow rate of N2 gas increases, it becomes difficult to uniformly supply N2 gas to the entire semiconductor surface. It is believed that there is.

これに対して、図９の実験結果では、Ｎ２ガスの流量が増加しても抵抗率の面内均一性が低下することはなく、ほぼ一定に維持されているのがわかる。これは、本考案の第1実施形態に係るガス供給装置では、Ｎ２ガスが３つに分流されかつオリフィスによって流量調節されてマニホールドへ流入されるため、Ｎ２ガスの流量が増加しても、半導体表面全体に均一にＮ２ガスが供給されるためであると考えられる。   On the other hand, in the experimental results of FIG. 9, it can be seen that the in-plane uniformity of the resistivity does not decrease even when the flow rate of the N 2 gas increases, and is maintained substantially constant. This is because, in the gas supply device according to the first embodiment of the present invention, the N2 gas is divided into three and the flow rate is adjusted by the orifice and flows into the manifold, so that even if the flow rate of the N2 gas increases, the semiconductor This is probably because the N2 gas is uniformly supplied to the entire surface.

尚、図１０の実験結果から、本考案の実施形態に係るガス供給装置を使えば、添加ガスとしてＮＨ３を使用する熱ＡＬＤにおいても同様の効果が得られることがわかる。   From the experimental results shown in FIG. 10, it can be seen that the same effect can be obtained in thermal ALD using NH 3 as an additive gas if the gas supply device according to the embodiment of the present invention is used.

［その他］
以上、本考案の特定の実施形態について説明してきたが、ここに開示される装置の構造は例示に過ぎず、実用新案登録請求の範囲に記載された本考案の思想から離れることなく、さまざまな修正及び変更が可能であることは当業者の知るところである。 [Others]
Although specific embodiments of the present invention have been described above, the structure of the apparatus disclosed herein is merely an example, and various configurations can be made without departing from the spirit of the present invention described in the claims of the utility model registration. Those skilled in the art know that modifications and changes are possible.

本考案の第1の実施形態に係るガス供給装置の概略図である。1 is a schematic view of a gas supply device according to a first embodiment of the present invention. （ａ）は同実施形態に使用されるマニホールドの側面図、（ｂ）はＡ−Ａ’断面図である。(A) is a side view of a manifold used in the embodiment, and (b) is a cross-sectional view along A-A ′. 従来のガス供給装置の概略図である。It is the schematic of the conventional gas supply apparatus. 本考案の第２の実施形態に係るガス供給装置の概略図である。It is the schematic of the gas supply apparatus which concerns on the 2nd Embodiment of this invention. プラズマＡＬＤ装置の断面を概略的に示す。1 schematically shows a cross section of a plasma ALD apparatus. プラズマＡＬＤ法による薄膜製造方法のフローチャートを示す。The flowchart of the thin film manufacturing method by a plasma ALD method is shown. 同方法によるプロセスガスのタイミングチャートを示す。The timing chart of the process gas by the same method is shown. 従来のガス供給装置を使った実験結果を示す。The experimental result using the conventional gas supply apparatus is shown. 本考案の第1実施形態に係るガス供給装置を使った実験結果を示す。The experimental result using the gas supply apparatus which concerns on 1st Embodiment of this invention is shown. 同実施形態に係るガス供給装置を使った実験結果を示す。The experimental result using the gas supply apparatus which concerns on the same embodiment is shown.

符号の説明Explanation of symbols

１・・・ガス供給装置、２・・・マニホールド、３・・・第1ガス供給配管、４・・・第2ガス供給配管、５・・・第3ガス供給配管、６・・・第4ガス供給配管、７・・・オリフィス、８・・・質量流量制御器、９・・・分岐点、１０、１１・・・ガスライン、１２・・・分流点、１３、１４・・・ガスライン、１５・・・分岐点、１６、１７、１８、１９・・・ガスライン、２０・・・分岐点、２１、２２・・・ガスライン、２３・・・バルブ、５０・・・プラズマＡＬＤ装置。 DESCRIPTION OF SYMBOLS 1 ... Gas supply apparatus, 2 ... Manifold, 3 ... 1st gas supply piping, 4 ... 2nd gas supply piping, 5 ... 3rd gas supply piping, 6 ... 4th Gas supply piping, 7 ... orifice, 8 ... mass flow controller, 9 ... branch point, 10, 11 ... gas line, 12 ... branch point, 13, 14 ... gas line 15 ... branch point 16, 17, 18, 19 ... gas line, 20 ... branch point, 21, 22 ... gas line, 23 ... valve, 50 ... plasma ALD device .

Claims (8)

半導体製造装置の反応室内部にプロセスガス及びパージガスを導入するためのガス供給装置であって、
前記反応室内部に前記プロセスガス及びパージガスを導入するためのマニホールドを有し、
前記マニホールドには、少なくとも３つのガス供給配管が結合されており、
前記プロセスガスのひとつである添加ガスが、オリフィスを有する複数の流路に分流されて、前記ガス供給配管の少なくとも２つを通じて前記マニホールドに流入するように構成されたガスラインシステムを備える、
ことを特徴とするガス供給装置。 A gas supply apparatus for introducing a process gas and a purge gas into a reaction chamber of a semiconductor manufacturing apparatus,
A manifold for introducing the process gas and purge gas into the reaction chamber;
At least three gas supply pipes are coupled to the manifold,
An additive gas that is one of the process gases is divided into a plurality of flow paths having orifices, and includes a gas line system configured to flow into the manifold through at least two of the gas supply pipes;
A gas supply device. 前記添加ガスが窒素ガスであることを特徴とする請求項１記載のガス供給装置。 The gas supply apparatus according to claim 1, wherein the additive gas is nitrogen gas. 前記半導体製造装置が、プラズマＡＬＤ装置であることを特徴とする請求項１記載のガス供給装置。 The gas supply apparatus according to claim 1, wherein the semiconductor manufacturing apparatus is a plasma ALD apparatus. 前記パージガスは、前記ガスラインを通じて前記マニホールドに流入されることを特徴とする請求項１から３いずれか１項記載のガス供給装置。 The gas supply apparatus according to any one of claims 1 to 3, wherein the purge gas flows into the manifold through the gas line. 半導体製造装置の反応室内部に、プロセスガス及びパージガスを導入するためのガス供給装置であって、
前記反応室内部に前記プロセスガス及びパージガスを導入するためのマニホールドと、
前記マニホールドに結合されたガスラインシステムと、
を備え、
前記ガスラインシステムは、前記マニホールドに互いに略等間隔に結合された、第１ガス供給配管、第２ガス供給配管、第３ガス供給配管及び第４ガス供給配管を有し、
前記第１ガス供給配管はパージガス供給装置に結合し、
前記第２ガス供給配管は二手に分岐し、一方は第１反応ガス供給装置に結合し、他方はオリフィスを介して分流点でさらに二手に分岐し、その一方はパージガス供給装置に結合し、他方は前記プロセスガスのひとつである添加ガス供給装置に結合し、
前記第３ガス供給配管は、二手に分岐し、一方は第２反応ガス供給装置に結合し、他方は第２オリフィスを介して前記分流点に結合し、
前記第４ガス供給配管は、二手に分岐し、一方は前駆体ガス供給装置に結合し、他方は第３オリフィスを介して前記分流点に結合する、
ことを特徴とするガス供給装置。 A gas supply device for introducing a process gas and a purge gas into a reaction chamber of a semiconductor manufacturing apparatus,
A manifold for introducing the process gas and purge gas into the reaction chamber;
A gas line system coupled to the manifold;
With
The gas line system includes a first gas supply pipe, a second gas supply pipe, a third gas supply pipe, and a fourth gas supply pipe that are coupled to the manifold at substantially equal intervals.
The first gas supply pipe is coupled to a purge gas supply device;
The second gas supply pipe is bifurcated, one is coupled to the first reaction gas supply device, the other is further bifurcated at the branch point through the orifice, one of which is coupled to the purge gas supply device, and the other Is coupled to an additive gas supply device which is one of the process gases,
The third gas supply pipe is bifurcated, one is connected to the second reaction gas supply device, and the other is connected to the diversion point through the second orifice,
The fourth gas supply pipe is bifurcated, one is connected to the precursor gas supply device, and the other is connected to the diversion point through a third orifice.
A gas supply device. 前記添加ガスは、窒素ガスであることを特徴とする請求項５記載のガス供給装置。 6. The gas supply apparatus according to claim 5, wherein the additive gas is nitrogen gas. 半導体製造装置の反応室内部に、プロセスガス及びパージガスを導入するためのガス供給装置であって、
前記反応室内部に前記プロセスガス及びパージガスを導入するためのマニホールドと、
前記マニホールドに結合されたガスラインシステムと、
を備え、
前記ガスラインシステムは、前記マニホールドに互いに略等間隔に結合された、第１ガス供給配管、第２ガス供給配管、第３ガス供給配管及び第４ガス供給配管を有し、
前記第１ガス供給配管はパージガス供給装置に結合し、
前記第２ガス供給配管は二手に分岐し、一方は第１反応ガス供給装置に結合し、他方は第１オリフィスを介して分流点でさらに二手に分岐し、その一方はパージガス供給装置に結合し、他方はさらに二手に分岐し、その一方は前記プロセスガスのひとつである添加ガス供給装置に結合し、他方は第２反応ガス供給装置に結合し、
前記第３ガス供給配管は、第２オリフィスを介して、前記分流点に結合し、
前記第４ガス供給配管は二手に分岐し、一方は前駆体ガス供給装置に結合し、他方は第３オリフィスを介して前記分流点に結合する、
ことを特徴とするガス供給装置。 A gas supply device for introducing a process gas and a purge gas into a reaction chamber of a semiconductor manufacturing apparatus,
A manifold for introducing the process gas and purge gas into the reaction chamber;
A gas line system coupled to the manifold;
With
The gas line system includes a first gas supply pipe, a second gas supply pipe, a third gas supply pipe, and a fourth gas supply pipe that are coupled to the manifold at substantially equal intervals.
The first gas supply pipe is coupled to a purge gas supply device;
The second gas supply pipe branches into two hands, one is connected to the first reaction gas supply device, and the other is further branched into two branches at the diversion point through the first orifice, one of which is connected to the purge gas supply device. The other is further divided into two branches, one of which is coupled to an additive gas supply device which is one of the process gases, and the other is coupled to a second reactive gas supply device,
The third gas supply pipe is connected to the diversion point via a second orifice;
The fourth gas supply pipe is bifurcated; one is connected to the precursor gas supply device, and the other is connected to the diversion point through a third orifice;
A gas supply device. 前記添加ガスは、窒素ガスであることを特徴とする請求項７記載のガス供給装置。 The gas supply device according to claim 7, wherein the additive gas is nitrogen gas.
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