KR20000038764A - Gas injection apparatus for thin layer evaporation of semiconductor wafer - Google Patents

Gas injection apparatus for thin layer evaporation of semiconductor wafer Download PDF

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Publication number
KR20000038764A
KR20000038764A KR1019980053865A KR19980053865A KR20000038764A KR 20000038764 A KR20000038764 A KR 20000038764A KR 1019980053865 A KR1019980053865 A KR 1019980053865A KR 19980053865 A KR19980053865 A KR 19980053865A KR 20000038764 A KR20000038764 A KR 20000038764A
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South Korea
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gas injection
wafer substrate
gas
wafer
thin layer
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KR1019980053865A
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Korean (ko)
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고재석
이광철
김광일
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신현준
재단법인 포항산업과학연구원
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Priority to KR1019980053865A priority Critical patent/KR20000038764A/en
Publication of KR20000038764A publication Critical patent/KR20000038764A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4558—Perforated rings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE: A gas injection apparatus for a thin layer evaporation of semiconductor wafer is provided in order to improve an uniformity of a thin layer thickness, according to spraying on a whole wafer substrate through a spray nozzle of a ring type which is located on a concentric circle, when evaporating in vacuum the thin layer on the silicon wafer as a semiconductor material by using a chemical gas-phase evaporation equipment of a low pressure by a type of sheet fed. CONSTITUTION: A gas injection apparatus for a thin layer evaporation of semiconductor wafer is formed by the following processes: a susceptor(11) which has a SiC heater as a heating element to heat and support a wafer substrate(W) at a center of a reaction room(10); a chemical gas-phase evaporation equipment of a low pressure by a type of sheet fed to be surrounded with a bel-jar(13) which is equipped by a outside heater(14), and the above outside heater(14) has a heating room in the outside of the above susceptor(11); a circular gas injection tube(20) with a large diameter which sprays on a whole wafer substrate from its edge a raw gas that is installed at a top space of the above wafer substrate(W), and that brings into the inside of the reaction room(10); a base gas injection tube(30) of a small ring type which is installed on a concentric circle of the above gas injection tube(20), and which injects and sprays the base gas on the center area of the wafer substrate(W); and many spray nozzles(21,31) which are installed to the rings forming the above injection tubes(20, 30) at a radial position.

Description

반도체 웨이퍼의 박막증착용 가스주입장치Gas injection device for thin film deposition of semiconductor wafer

본 발명은 반도체 웨이퍼의 박막증착용 가스주입장치, 보다 상세하게는 반도체 재료인 실리콘 웨이퍼에 박막을 증착하게 된 매엽식 저압 화학기상증착장비에서 웨이퍼의 기판상에 증착되는 원료가스와 베이스가스를 별도의 주입관로를 거친 후 동심원상에 위치되도록 한 링형의 분사노즐을 통해 웨이퍼기판에 분사시킴에 따라 박막두께의 균일성을 증대시킬 수 있게한 반도체 웨이퍼의 박막증착용 가스주입장치에 관한 것이다.The present invention separates the source gas and the base gas deposited on the substrate of the wafer in a gas injection device for thin film deposition of a semiconductor wafer, and more specifically, a single-layer low pressure chemical vapor deposition apparatus which deposits a thin film on a silicon wafer as a semiconductor material. The present invention relates to a gas injection device for thin film deposition of a semiconductor wafer, which can increase the uniformity of the thin film thickness by spraying the wafer substrate through a ring-shaped injection nozzle which is positioned in a concentric circle after passing through the injection pipe.

일반적으로, 반도체 박막재료인 실리콘 웨이퍼의 박막증착은 집적회로, 센서, 트랜지스터 및 태양전지 등의 제작에서 가장 기본적이면서 자주 사용되는 공정이며, 이때 이용되는 장비로서 반도체 박막 저압 화학기상증착장비가 쓰이고 있다.In general, the thin film deposition of a silicon wafer, which is a semiconductor thin film material, is the most basic and frequently used process in the fabrication of integrated circuits, sensors, transistors, and solar cells, and the semiconductor thin film low pressure chemical vapor deposition equipment is used. .

도 1은 종래의 반도체 박막증착용 매엽식 저압 화학기상증착장치의 일예를 나타낸 것으로, 반응실(1)의 중심부위에 실리콘 웨이퍼기판(W)이 안착·지지되는 서셉터(2)가 장착되어 있되 이 서셉터의 저면에는 상부의 웨이퍼기판을 가열하기 위한 SiC발열체로된 히터(3)가 구비되고, 상기 반응실(1)의 외측에는 외부와 차단하면서 소정 공간을 형성하도록 둘러싸고 있는 벨자(4)와 이 벨자를 가열하기 위한 가열저항코일로 된 외부히터(5)로 구성으로 되어 있다.1 shows an example of a conventional single-layer low-pressure chemical vapor deposition apparatus for depositing a semiconductor thin film, wherein a susceptor 2 on which a silicon wafer substrate W is mounted and supported is mounted on a central portion of a reaction chamber 1. The susceptor is provided with a heater 3 made of a SiC heating element for heating an upper wafer substrate, and a bell jar 4 surrounded by an outer side of the reaction chamber 1 so as to form a predetermined space while blocking the outside. And an external heater 5 made of a heating resistance coil for heating the bell jar.

또한 상기 반응실(1)의 웨이퍼(W)가 놓인 상부측에는 원료가스를 공급받아 하향으로 확산되게 분사시키는 확산판(6')을 가진 주입관(6)이 설치되어 있다.In addition, an injection tube 6 having a diffusion plate 6 'for supplying source gas and spraying downward is provided on the upper side where the wafer W of the reaction chamber 1 is placed.

그러므로 전원을 공급하여 내부의 히터(3)와 외부히터(5)를 가열작동 시키게 되면, 상기 SiC발열체 히터(2)에서 발생된 열은 서셉터(2)를 통하여 웨이퍼기판(W)에 전도되어 이 기판을 가열시키고, 가열 저항코일로 된 외부히터(5)는 반응실(1)의 내부를 가열시켜 공정가스를 예열하게 되며, 이러한 상태에서 벨자(4)의 측면에 설치된 원료가스 주입관(6)의 확산판을 통해 원료개스가 분사됨으로써 웨이퍼기판상에 여러 가지 박막이 증착되었다.Therefore, when power is supplied to heat the internal heater 3 and the external heater 5, the heat generated from the SiC heating element heater 2 is conducted to the wafer substrate W through the susceptor 2. The substrate is heated, and the external heater 5 made of a heating resistance coil heats the inside of the reaction chamber 1 to preheat the process gas, and in this state, the raw material gas injection pipe installed on the side of the bell jar 4 ( By spraying the raw material gas through the diffusion plate of 6), various thin films were deposited on the wafer substrate.

그러나 위와 같은 종래의 매엽식 저압 화학기상증착장치는 증착소재인 원료가스를 나팔형태로 된 확산판(6')에 의해 웨이퍼기판에 분산시켜 박막을 증착되게 한 구조이므로, 상기 증착과정에서 웨이퍼기판의 온도분포가 그 중심부분에서 높고 바깥부분으로 갈수록 낮아짐으로써 이에 비례하여 증착박막의 두께도 중심에 비하여 바깥으로 갈수록 덜 증착되어 전체적인 박막두께의 균일도가 떨어지는 문제점이 있었다.However, the conventional single-layer low-pressure chemical vapor deposition apparatus as described above has a structure in which a thin film is deposited by dispersing a raw material gas, which is a deposition material, on a wafer substrate by a diffusion plate 6 'in the form of a trumpet, and thus, the wafer substrate in the deposition process. Since the temperature distribution of is higher in the central part and lower toward the outside, the thickness of the deposited thin film is less deposited toward the outside compared to the center in proportion to this, and thus the uniformity of the overall thin film thickness is inferior.

본 발명은 상기와 같은 종래의 저압 화학기상증착방법의 문제점을 감안하여 안출한 것으로, 그 목적은 웨이퍼기판의 전부분에 균일한 상태로 박막을 증착할 수 있는 반도체 웨이퍼의 박막증착용 가스주입장치를 제공하는 것이다.The present invention has been made in view of the above problems of the conventional low pressure chemical vapor deposition method, the object of which is a gas injection device for thin film deposition of a semiconductor wafer capable of depositing a thin film in a uniform state on the entire portion of the wafer substrate To provide.

이러한 목적을 달성하기 위한 본 발명은, 반응실의 중앙부에 웨이퍼기판을 가열하는 SiC발열체 히터를 구비한 서셉터와 이 서셉터의 외측에 가열실을 형성하는 외부히터가 장착된 벨자로 구성된 매엽식 저압 화학기상증착장비에 있어서, 상기 반응실에 설치된 원료가스 주입관의 분사노즐로부터 웨이퍼기판의 전부분으로 분사되는 가스의 흐름이 베이스가스 주입관의 분사노즐을 통해 웨이퍼기판의 중심부분으로 분사되는 베이스가스의 흐름에 의해 저해되도록 원료가스 주입관과 베이스가스 주입관을 설계함에 따라, 실리콘 웨이퍼기판(W)의 중심으로 갈수록 원료가스의 흐름과 원료가스의 농도를 감소시키고 이에 의해 웨이퍼기판의 중심에서 바깥으로 갈수록 증착박막의 두께 변화가 거의 없게되어 증착두께가 균일한 양질의 박막층을 얻을 수 있게됨을 특징으로 한다.In order to achieve the above object, the present invention is a single-leaf type consisting of a susceptor having a SiC heating element heater for heating a wafer substrate in the center of the reaction chamber, and a bell jar equipped with an external heater for forming a heating chamber outside the susceptor. In the low pressure chemical vapor deposition apparatus, a gas flow injected from the injection nozzle of the source gas injection tube installed in the reaction chamber to the entire portion of the wafer substrate is injected into the center portion of the wafer substrate through the injection nozzle of the base gas injection tube. As the source gas injection tube and the base gas injection tube are designed to be inhibited by the flow of the base gas, the flow of the source gas and the concentration of the source gas decrease toward the center of the silicon wafer substrate W, thereby reducing the center of the wafer substrate. As the thickness of the deposited thin film is reduced from the outside to the outside, a thin film layer having a uniform deposition thickness can be obtained. Characterized in that.

도 1은 종래의 반도체 박막증착용 매엽식 저압 화학기상증착장치의 일예를 나타낸 구성도,1 is a configuration diagram showing an example of a conventional single-layer low-pressure chemical vapor deposition apparatus for depositing a semiconductor thin film,

도 2는 본 발명의 가스주입장치가 설치된 매엽식 저압 화학기상증착장비를 나타낸 전체구성도,Figure 2 is an overall configuration showing a single-layer low-pressure chemical vapor deposition equipment equipped with a gas injection device of the present invention,

도 3은 상기 증착장비에 설치된 가스주입장치의 작동상태도,Figure 3 is an operating state of the gas injection device installed in the deposition equipment,

도 4는 본 발명의 웨이퍼기판에 열이전도될 때 그 열분포 상태를 나타낸 선도,Figure 4 is a diagram showing the heat distribution state when the heat transfer to the wafer substrate of the present invention,

도 5는 본 발명의 가스주입장치의 주입관을 통해 증착원료인 가스의 분사상태를 나타낸 평면구성도이다.Figure 5 is a plan view showing the injection state of the gas as a deposition material through the injection pipe of the gas injection device of the present invention.

＜ 도면의 주요 부분에 대한 부호의 설명 ＞<Description of the code | symbol about the principal part of drawing>

10 : 반응실 11 : 서셉터10: reaction chamber 11: susceptor

12 : SiC발열체 히터 13 : 벨자12 SiC heating element heater 13 Belza

14 : 외부히터 20 : 원료개스 주입관14: external heater 20: raw material gas injection pipe

21, 31 : 분사노즐 30 : 베이스가스 주입관21, 31: injection nozzle 30: base gas injection pipe

W : 웨이퍼기판W: Wafer substrate

이하, 본 발명의 반도체 웨이퍼의 박막증착용 가스주입장치를 첨부도면을 참조하여 상세히 설명하면 다음과 같다.Hereinafter, a gas injection apparatus for thin film deposition of a semiconductor wafer of the present invention will be described in detail with reference to the accompanying drawings.

도 2는 본 발명의 가스주입장치가 설치된 매엽식 저압 화학기상증착장비의 전체구성을 나타낸 것으로, 반응실(10)의 중앙부에 웨이퍼기판(W)을 가열하는 SiC발열체 히터(12)를 구비한 서셉터(11)가 설치되고, 이 서셉터의 외측에는 가열실을 형성하는 외부히터(14)가 장착된 벨자(13)로 둘러쌓여 있다.Figure 2 shows the overall configuration of a single-layer low-pressure chemical vapor deposition equipment equipped with a gas injection device of the present invention, having a SiC heating element heater 12 for heating the wafer substrate (W) in the center of the reaction chamber (10) The susceptor 11 is provided, and the outside of the susceptor is surrounded by a bell jar 13 on which an external heater 14 forming a heating chamber is mounted.

웨이퍼기판(W)의 상부측 공간에는 외부에서 공급되는 원료가스를 반응실(10)내로 도입하여 웨이퍼기판의 가장자리에서 전부분으로 분사시키는 직경이 큰 링형의 원료가스 주입관(20)이 배관되고, 이 원료가스 주입관(20)의 동심원상에는 웨이퍼기판(W)의 중심부로 베이스가스를 도입 및 분사시키는 소형의 링형태로된 베이스가스 주입관(30)이 배관되어 있다.In the upper space of the wafer substrate W, a large ring-shaped raw gas injection tube 20 for introducing a raw material gas supplied from the outside into the reaction chamber 10 and spraying it from the edge of the wafer substrate to the whole part is piped. On the concentric circle of the raw material gas injection pipe 20, a base ring gas injection pipe 30 in a small ring shape for introducing and injecting the base gas into the center of the wafer substrate W is piped.

상기 각 주입관(20)(30)을 구성하는 링에는 방사상으로 위치하게 다수의 분사노즐(21)(31)이 형성되어 있다.A plurality of injection nozzles 21 and 31 are formed in the rings constituting the injection pipes 20 and 30 so as to be radially positioned.

따라서, 상기와 같은 본 발명은 서셉터(11)에 구비된 SiC발열체 히터(12)와 반응실(10)을 둘러쌓고 있는 벨자(13)에 장착된 외부히터(14)에 전류를 공급하여 가열작동시키면, SiC발열체 히터는 서셉터를 통하여 그 위에 올려진 웨이퍼기판(W)에 열을 전도시켜 적정의 반응온도로 가열하며, 가열저항코일로된 외부히터(14)는 반응실(10)의 공간으로 열을 발산시키면서 증착공정에 소요되는 가스를 예열시키는 작용을 한다.Accordingly, the present invention as described above is heated by supplying a current to the external heater 14 mounted on the bellza 13 surrounding the SiC heating element heater 12 and the reaction chamber 10 provided in the susceptor 11. When activated, the SiC heating element heater conducts heat to the wafer substrate W placed thereon through the susceptor and heats it to an appropriate reaction temperature, and the external heater 14 made of the heating resistance coil is made of It dissipates heat into the space while preheating the gas required for the deposition process.

도 4는 본 발명의 장치에서 웨이퍼기판에 열이전도될 때 그 열분포를 나타낸 선도로서, 상기 매엽식 저압 화학기상증착장비의 반응실(10)에 안착되어 각 히터의 가열작용에 의해 열이 전도되는 실리콘 웨이퍼기판(W)의 온도분포는 그 중심에서는 온도가 비교적 높은 반면 바깥부분에서는 낮게되는 소위 등온선으로 나타나게 된다.Figure 4 is a diagram showing the heat distribution when the heat transfer to the wafer substrate in the apparatus of the present invention, it is seated in the reaction chamber 10 of the single-layer low-pressure chemical vapor deposition equipment, the heat conduction by the heating action of each heater The temperature distribution of the silicon wafer substrate W is represented by a so-called isotherm that has a relatively high temperature at its center and a low temperature at its outer portion.

즉, 종래의 가스주입장치는 상기와 같은 온도분포하에서 웨이퍼기판의 상측 중심에서 확산판을 통해 원료가스를 분사시킴으로써, 증착박막의 두께가 그 중심에 비하여 바깥으로 갈수록 덜 증착되어 전체적인 박막두께의 균일도가 떨어지는 문제점이 있었다.That is, the conventional gas injection apparatus injects the raw material gas through the diffusion plate at the upper center of the wafer substrate under the above temperature distribution, so that the thickness of the deposited thin film is deposited less toward the outside than the center thereof, so that the overall thin film thickness is uniform. There was a problem falling.

도 5는 본 발명의 실시예의 가스주입장치를 구성하는 주입관을 통해 증착원료인 가스의 분사상태를 나타낸 것으로, 원료가스 주입관(20)에 공급된 원료가스는 그 링을 따라 방사상으로 형성된 다수의 분사노즐(21)을 통해 웨이퍼기판(W)을 향해 고르게 분사되면서 웨이퍼기판의 전표면에 걸쳐 흐름을 형성하며, 이와 동시에 베이스가스 주입관(30)에 형성된 다수의 분사노즐(31)을 통하여 웨이퍼기판(W)의 중심으로도 가스가 분사된다.Figure 5 shows the injection state of the deposition material gas through the injection pipe constituting the gas injection device of the embodiment of the present invention, the raw material gas supplied to the raw material gas injection pipe 20 formed a plurality of radially along the ring While spraying evenly toward the wafer substrate (W) through the injection nozzle 21 of the to form a flow over the entire surface of the wafer substrate, and at the same time through a plurality of injection nozzles 31 formed in the base gas injection pipe (30) Gas is also injected into the center of the wafer substrate W.

상기와 같이 가스가 분사되는 과정에서 원료가스 주입관(20)의 노즐로부터 웨이퍼기판의 전부분으로 분사되는 가스의 흐름은 베이스가스 주입관(30)의 노즐을 통해 웨이퍼기판의 중심부분으로 분사되는 베이스가스의 흐름에 의해 저해됨으로써, 실리콘 웨이퍼기판(W)의 중심으로 갈수록 원료가스의 흐름과 원료가스의 농도가 감소된다.In the process of gas injection as described above, the flow of gas injected from the nozzle of the source gas injection tube 20 to the entire portion of the wafer substrate is injected into the central portion of the wafer substrate through the nozzle of the base gas injection tube 30. By being inhibited by the flow of the base gas, the flow of the source gas and the concentration of the source gas decrease toward the center of the silicon wafer substrate W. As shown in FIG.

＜ 실시예 ＞<Example>

SiC발열체 히터(12)의 온도를 800℃로 가열작동시키고, 실리콘 웨이퍼기판에 도핑되는 다결정 실리콘 박막을 1000Å두께로 입힐 때, 베이스가스의 흐름이 없을때에는 웨이퍼기판의 중심에서 바깥으로 갈수록 증착박막의 두께가 얇아졌다.When the temperature of the SiC heating element heater 12 is heated to 800 ° C., and the polycrystalline silicon thin film doped onto the silicon wafer substrate is coated with a thickness of 1000 μs, when there is no flow of base gas, the deposition thin film moves from the center of the wafer substrate toward the outside. It is thinner.

반면에, 베이스가스의 흐름이 존재하면 웨이퍼기판의 중심에서 바깥으로 갈수록 증착박막의 두께변화가 거의 없었다.On the other hand, if there is a flow of base gas, there is little change in thickness of the deposited thin film from the center of the wafer substrate to the outside.

또 베이스 개스유량이 어느 정도 많으면, 웨이퍼기판의 중심에서 바깥으로 갈수록 두께가 두꺼워짐을 확인할 수 있었다.In addition, when the base gas flow rate was somewhat higher, the thickness became thicker from the center of the wafer substrate to the outside.

그러므로 거듭된 실험을 통하여 확인된 결과, 원료가스의 유량과 베이스가스의 유량 비(比)가 60/1인 경우에 증착두께의 균일도가 1% 이내가 됨으로써 종래의 10% 내외로 증착두께가 불균일 할 때에 비하여 보다 양질의 박막이 형성됨을 알 수 있었다.Therefore, as a result of repeated experiments, when the ratio of the flow rate of the source gas and the base gas is 60/1, the uniformity of the deposition thickness becomes less than 1%, so that the deposition thickness may be uneven within the conventional 10%. It was found that a thin film of better quality was formed as compared to the above.

이와 같은 본 발명의 반도체 웨이퍼의 박막증착용 가스주입장치는, 웨이퍼기판의 전부분에 분사되는 원료가스의 흐름을 웨이퍼기판의 중앙부위로 분사시키는 베이스가스의 흐름과 유량에 의해 저해시킴에 따라, 실리콘 웨이퍼기판의 전표면에 걸쳐서 일정한 상태로 박막을 증착하여 균일한 증착두께을 얻을 수 있는 효과가 있는 것이다.The gas injection device for thin film deposition of the semiconductor wafer of the present invention as described above inhibits the flow of the raw material gas injected to the entire portion of the wafer substrate by the flow and the flow rate of the base gas which is injected into the center portion of the wafer substrate. The thin film is deposited in a uniform state over the entire surface of the wafer substrate to obtain a uniform deposition thickness.

Claims (2)

반응실(10)의 중앙부에 웨이퍼기판(W)을 가열하는 SiC발열체 히터(12)를 구비한 서셉터(11)와 이 서셉터의 외측에 가열실을 형성하는 외부히터(14)가 장착된 벨자(13)로 둘러 쌓여진 매엽식 저압 화학기상증착장비에 있어서,A susceptor 11 having a SiC heating element heater 12 for heating the wafer substrate W in the center of the reaction chamber 10 and an external heater 14 for forming a heating chamber outside the susceptor are mounted. In the single-sheet low-pressure chemical vapor deposition equipment surrounded by the bell jar (13), 상기 웨이퍼기판(W)의 상부측 공간에 설치되어 반응실(10)내로 도입되는 원료가스를 웨이퍼기판의 가장자리에서 전부분으로 분사시키는 직경이 큰 링형의 원료가스 주입관(20)과, 상기 원료가스 주입관(20)의 동심원상에 설치되어 웨이퍼기판(W)의 중심부로 베이스가스를 도입 및 분사시키는 소형의 링형태로된 베이스가스 주입관(30)과, 상기 각 주입관(20)(30)을 구성하는 링에 방사상으로 위치하게 형성된 다수의 분사노즐(21)(31)을 포함한 구성을 특징으로 하는 반도체 웨이퍼의 박막증착용 가스주입장치.A large ring-shaped raw material gas injection tube 20 which is installed in the upper space of the wafer substrate W to inject the raw material gas introduced into the reaction chamber 10 from the edge of the wafer substrate to the whole portion, and the raw material Base gas injection pipes 30 are formed in a concentric circle of the gas injection pipes 20 and have a small ring-shaped base gas injection pipe 30 for introducing and injecting the base gas into the center of the wafer substrate W, and the respective injection pipes 20 ( 30. A gas injection apparatus for depositing a thin film of a semiconductor wafer, comprising a plurality of injection nozzles 21 and 31 formed radially in a ring constituting 30). 제1항에 있어서, 상기 원료가스 주입관(20)의 노즐로부터 웨이퍼기판의 전부분으로 분사되는 가스의 흐름이 베이스가스 주입관(30)의 노즐을 통해 웨이퍼기판의 중심부분으로 분사되는 베이스가스의 흐름에 의해 저해되도록 원료가스 주입관과 베이스가스 주입관이 설계됨을 특징으로 하는 반도체 웨이퍼의 박막증착용 가스주입장치.The base gas of claim 1, wherein a flow of gas injected from the nozzle of the source gas injection pipe 20 to the entire portion of the wafer substrate is injected into a central portion of the wafer substrate through the nozzle of the base gas injection pipe 30. The gas injection device for thin film deposition of a semiconductor wafer, characterized in that the source gas injection tube and the base gas injection tube is designed to be inhibited by the flow of.
KR1019980053865A 1998-12-09 1998-12-09 Gas injection apparatus for thin layer evaporation of semiconductor wafer KR20000038764A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030038396A (en) * 2001-11-01 2003-05-16 에이에스엠엘 유에스, 인코포레이티드 System and method for preferential chemical vapor deposition
KR20040014071A (en) * 2002-08-09 2004-02-14 삼성전자주식회사 Chemical vapor deposition apparatus having gas injector in reaction chamber
KR100460350B1 (en) * 2002-01-16 2004-12-08 주성엔지니어링(주) Method for manufacturing alumina ceramic injector
KR100483282B1 (en) * 2002-04-29 2005-04-15 디지웨이브 테크놀러지스 주식회사 Chemical Vapor Deposition Apparatus
KR100488426B1 (en) * 2002-09-09 2005-05-11 주식회사 다산 씨.앤드.아이 Remote plasma atomic layer chemical vapor deposition apparatus and method

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JPH01223724A (en) * 1988-03-02 1989-09-06 Mitsubishi Electric Corp Chemical vapor growth device
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JPH1064831A (en) * 1996-08-20 1998-03-06 Fujitsu Ltd Chemical vapor deposition apparatus

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JPS6357775A (en) * 1986-08-27 1988-03-12 Hitachi Electronics Eng Co Ltd Cvd thin film forming device
JPH01223724A (en) * 1988-03-02 1989-09-06 Mitsubishi Electric Corp Chemical vapor growth device
JPH06151335A (en) * 1992-11-13 1994-05-31 Hitachi Ltd Vapor growth apparatus
JPH1064831A (en) * 1996-08-20 1998-03-06 Fujitsu Ltd Chemical vapor deposition apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030038396A (en) * 2001-11-01 2003-05-16 에이에스엠엘 유에스, 인코포레이티드 System and method for preferential chemical vapor deposition
KR100460350B1 (en) * 2002-01-16 2004-12-08 주성엔지니어링(주) Method for manufacturing alumina ceramic injector
KR100483282B1 (en) * 2002-04-29 2005-04-15 디지웨이브 테크놀러지스 주식회사 Chemical Vapor Deposition Apparatus
KR20040014071A (en) * 2002-08-09 2004-02-14 삼성전자주식회사 Chemical vapor deposition apparatus having gas injector in reaction chamber
KR100488426B1 (en) * 2002-09-09 2005-05-11 주식회사 다산 씨.앤드.아이 Remote plasma atomic layer chemical vapor deposition apparatus and method

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