KR20040014071A - Chemical vapor deposition apparatus having gas injector in reaction chamber - Google Patents

Abstract

PURPOSE: A CVD(Chemical Vapor Deposition) apparatus including a gas injector within a reaction chamber is provided to enhance the uniformity of a material layer such as a silicon oxide layer by improving an injection method of reaction gas. CONSTITUTION: A CVD apparatus including a gas injector within a reaction chamber includes a chuck, a guide ring, and a reaction gas injection unit(510). The chuck is installed within the reaction chamber to support a wafer. The guide ring is installed at a side of the chuck. The reaction gas injection unit(510) is formed with a reaction gas supply tube(517), a reaction gas distribution ring(511), and a plurality of reaction gas injectors(513,515). The reaction gas supply tube(517) is connected to a bottom of the chamber. The reaction gas distribution ring(511) is connected to the reaction gas supply tube to distribute the reaction gas. The reaction gas injectors(513,515) are used for injecting the reaction gas on a wafer.

Description

Chemical vapor deposition apparatus having a gas injector in a reaction chamber

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to equipment used in semiconductor manufacturing, and more particularly, to chemical vapor deposition (CVD) equipment including a gas injector for injecting a reaction gas into a reaction chamber.

CVD equipment is used to deposit material layers in semiconductor device manufacturing. When depositing a layer of material on a wafer using CVD equipment, the uniformity of the deposited material layer is one of the factors that greatly affect the fabrication of semiconductor devices. Therefore, a great deal of attention is focused on improving the uniformity of the material layer.

In general, it is known that the uniformity of this material layer may be affected by the injection method of the reaction gas. Accordingly, efforts to improve the injection method of the reaction gas in order to improve the uniformity of the material layer have been attempted in various ways.

Reactive gas injection or injection methods currently employed in typical high density plasma (HDP) CVD equipment are roughly classified into two types. First, an injector introduced for injecting or injecting a reaction gas into the reaction chamber is introduced into the chamber at the upper side of the chuck, or the injector is introduced into the chamber from the bottom of the chamber. There is a way to be introduced.

1 is a view schematically illustrating a method of injecting a reaction gas into a chamber in a conventional chemical vapor deposition equipment.

Referring to FIG. 1, the chuck 20 is provided in the chamber 10 of the CVD apparatus, and the wafer 30 is mounted on the chuck. A guide ring 40 is introduced to the side of the chuck 20 to wrap around the wafer 30 mounted on the chuck 20.

Injectors 51 and 55 are drawn in from the bottom of the chamber 10 to inject the reactant gas into the chamber 10. In this case, the injectors 51 and 55 are two types of the first injector 51 and the second injector 55 to separately supply two kinds of reaction gases required for the deposition reaction of the material layer, for example, the silicon oxide layer. Is introduced.

The first injector 51 may be in the form of a hook-type injector, and injects silane (SiH ₄ ) into the chamber 10 using a silicon source gas. The second injector 55 may be in the form of a straight injector, and injects oxygen gas O ₂ into the chamber 10 with an oxidant. For uniform deposition, the injection holes of the first injector 51 are preferably aligned at a position corresponding to the intermediate position of the wafer 30, and the injection holes of the second injector 55 are directed toward the wafer 30. It is preferable. In this case, a plurality of second injectors 55 may be installed around the wafer 30.

However, since the injection of silane does not become uniform on the wafer 30 only by the first injector 51 having a hook-type injector type, silane gas is introduced from the periphery of the chuck 20 to overcome this. It is equipped with a spraying method so as to spray simultaneously with the injection of the.

This secondary injection of silane gas allows the silane gas flow to be provided from the guide ring 40 and the chuck 20 to the edge of the wafer 30. This flow of silane gas interferes with the sputtering of the oxygen gas, which impairs the uniformity of the material properties (eg, deposition thickness, surface shape, shape) of the film at the center and the edge of the wafer 30. . In addition, since the silane gas flow supplied auxiliary passes between the guide ring 40 and the chuck 20, the flow of the silane gas is affected by the installation position of the guide ring 40 and the chuck 20. Therefore, when the deposition process is continuously performed, the thickness uniformity of the deposited layer between the wafer and the wafer may have a large difference.

As described above, since the uniformity of the material layer deposited is greatly influenced by the method of injecting the reaction gas into the chamber 10, the effort to improve the uniformity of the material layer by improving the method of injecting the reaction gas. Are still being tried.

SUMMARY OF THE INVENTION The present invention provides a chemical vapor deposition apparatus including a gas injector to which a reactive gas injection method may be applied to improve the uniformity of a material layer deposited when a material layer is deposited.

1 is a view schematically showing a conventional chemical vapor deposition equipment.

2 to 5 are schematic diagrams for explaining the chemical vapor deposition equipment according to an embodiment of the present invention.

One aspect of the present invention for achieving the above technical problem, provides a chemical vapor deposition equipment including a reactive gas injector.

The chemical vapor deposition apparatus includes a chamber in which a deposition reaction is to proceed, a chuck supporting a wafer to be installed and mounted in the chamber, a guide ring introduced at a side of the chuck, and the deposition reaction in the chamber. A reaction gas supply pipe drawn in from the bottom of the chamber to supply a reaction gas required for the reaction, a reaction gas distribution ring part for distributing the reaction gas supplied and connected to the reaction gas supply pipe, and the reaction gas distribution ring part And a reactant gas injector comprising a plurality of reactant gas injectors connected to the dispensing reactant gas onto the wafer.

In addition, the chemical vapor deposition apparatus includes a chamber in which a deposition reaction is to proceed, a chuck supporting a wafer to be installed and mounted in the chamber, a guide ring introduced into a side of the chuck, and the chamber A first reaction gas distribution for distributing a first reaction gas supply pipe drawn from the bottom of the chamber to supply a first reaction gas required for the deposition reaction, and the first reaction gas supplied and connected to the first reaction gas supply pipe A first reactive gas injector including a ring portion and a plurality of first reactive gas injection portions connected to the first reactive gas distribution ring portion to inject the first reactive gas distributed onto the wafer; A second reaction gas supply pipe drawn from the bottom of the chamber, and a second reaction gas distribution ring for distributing the second reaction gas supplied to and connected to the second reaction gas supply pipe , And a second reaction gas injector including a plurality of second reaction gas injection units for injecting onto the second reaction gas distribution ring connected to said a dispensing the second reaction gas wafer.

Here, the first reaction gas injector may include a straight injector and a hook injector installed upright from the first reaction gas distribution ring part.

The first reaction gas injector may inject a silicon source gas into the chamber as the first reaction gas.

The second reaction gas injector may include a straight injector installed to stand up from the second reaction gas distribution ring.

The second reactive gas injector may inject an oxidizing gas into the chamber as the second reactive gas.

The second reaction gas injector may be installed outside the first reaction gas injector.

According to the present invention, the uniformity of the deposited material layer can be improved by improving the manner of injecting the reaction gases into the chamber.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, embodiments of the present invention may be modified in many different forms, and the scope of the present invention should not be construed as being limited by the embodiments described below. Embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art. Therefore, it is preferable to understand that the shape of an element etc. in the drawing are exaggerated in order to emphasize clearer description. Elements denoted by the same reference numerals in the drawings means the same element.

The embodiment of the present invention proposes a new gas injection method for supplying a reaction gas to the chamber of the chemical vapor deposition equipment. It also provides a new injector suitable for this new gas injection method. The injector according to the embodiment of the present invention is schematically composed of a gas distribution ring portion and an injection portion introduced from the bottom of the chamber.

FIG. 2 is a view schematically illustrating a first injector employed in a chemical vapor deposition apparatus according to an embodiment of the present invention, and FIG. 3 is a second diagram used in a chemical vapor deposition apparatus according to an embodiment of the present invention. 4 is a diagram schematically illustrating the injector, and FIG. 4 is a diagram schematically illustrating the configuration of the first injector employed in the chemical vapor deposition apparatus according to the embodiment of the present invention. 5 is a view schematically illustrating a form in which a first injector and a second injector are installed in a chemical vapor deposition apparatus according to an exemplary embodiment of the present invention.

2 to 5, in the chemical vapor deposition apparatus according to the exemplary embodiment of the present invention, a chuck 200 is provided in a chamber (100 of FIG. 5) and a wafer is mounted on the chuck 200. At this time, the guide ring 400 is introduced to the side of the chuck 200 to surround the wafer mounted on the chuck 200.

The CVD apparatus according to the embodiment of the present invention does not adopt a method of injecting gas between the guide ring 400 and the chuck 200. Accordingly, no gas flow is introduced between the guide ring 400 and the chuck 200. For example, when a CVD apparatus is configured to form a silicon oxide layer on a wafer, the conventional CVD apparatus of FIG. 1 injects silane gas between the chuck (20 in FIG. 1) and the guide ring (40 in FIG. 1). Was adopted. However, the embodiment of the present invention does not adopt a method of injecting silane gas between the chuck 200 and the guide ring 400.

Accordingly, the silane gas flow due to the injection of the assisted silane gas interferes with the sputtering of the oxygen gas so that the uniformity of the material properties (eg, deposition thickness, surface shape, shape) at the center and edge of the wafer It can prevent the sex from being impaired. In addition, the auxiliary silane gas flow is affected by the flow depending on the installation position of the guide ring (40 in FIG. 1) and the chuck (20 in FIG. 1). The thickness uniformity of the deposited layer can be prevented from having a large difference.

That is, the problem of the gas injection method in the conventional CVD equipment as shown in Figure 1 can be solved. However, if the gas injection between the guide ring 40 and the chuck 20 is thus simply excluded, the conventional CVD equipment shown in FIG. 1 is sufficient reactant gas on the wafer to be introduced on the chuck 20, for example, It is difficult to supply silane gas and thus cannot meet the required deposition conditions.

Accordingly, an embodiment of the present invention provides a new concept gas injector capable of providing sufficient silane gas without silane gas injection between the guide ring 400 of FIG. 5 and the chuck 200.

Referring to FIG. 2, the first reaction gas injector 510 is installed in the first reaction gas distribution ring part 511 and the first reaction gas distribution ring part 511 to sufficiently supply a reaction gas such as silane gas onto the wafer. It is configured to include a plurality of first reaction gas injection unit (513, 515).

As shown in FIG. 5, the first reaction gas distribution ring part 511 is installed at the bottom of the chamber 100, and the first reaction gas supply pipe 517 for providing a reaction gas to the first reaction gas distribution ring part 511 is provided. The bottom of the chamber 100 is connected to the first reaction gas distribution ring 511. Silane gas may be supplied to the first reaction gas supply pipe 517 as a silicon source gas for depositing a first reaction gas, for example, a silicon oxide layer, supplied to the chamber 100.

A plurality of first reactive gas injection units 513 and 515 may be connected to the first reactive gas distribution ring unit 511. The first reaction gas injectors 513 and 515 are installed to stand in a circumference of a wafer introduced on the chuck (200 in FIG. 5). The first reaction gas, for example, silane gas, supplied to the first reaction gas supply pipe 517 may be distributed in the first reaction gas distribution ring 511 to be provided to the respective first reaction gas injectors 513 and 515. do.

In this case, the first reaction gas injectors 513 and 515 may be composed of two kinds of gas injectors. For example, it may be divided into a hook-type first reaction gas injection unit 513 and a straight first reaction gas injection unit 515. The hook-type first reaction gas inlet 513 has a shape in which the body extends in the form of a hook so that the injection hole is directed toward the center of the chuck 200, and the straight first reaction gas inlet 515 is the chuck 200. It is installed so as to stand around the injection hole is installed toward the center direction of the chuck 200.

At this time, it is sufficient that one of the hook-type first reaction gas injectors 513 is provided, but a plurality of straight first reaction gas inlets 515 may be installed. That is, as illustrated in FIG. 4, the straight first reaction gas injector 515 or the hook-type first reaction gas injector 513 is coupled to the first reaction gas distribution ring part 511 to stand. Can be. At this time, the injection hole 519 is directed toward the center direction.

Meanwhile, the first reaction gas injector 513 may be formed of ceramic. In addition, the first reaction gas distribution ring part 511 may be formed of aluminum, stainless steel, or the like.

As such, by configuring the first reaction gas injector 510 for the first reaction gas of one of the reaction gases participating in the deposition reaction, such as silane gas, between the chuck 200 and the guide ring 400. Even without performing gas injection, it is possible to uniformly spray or provide a sufficient first reaction gas required for deposition conditions on the wafer. In this case, although the first reaction gas injector 510 includes a plurality of first reaction gas injectors 513 and 515, the first reaction gas injector 510 may be introduced. Reactive gas injection units 513 and 515 may be introduced.

When the gas supply pipe is directly connected to each of the plurality of first reaction gas injectors 513 and 515, various problems may occur. For example, the gas supply lines at the bottom of the chamber 100 may be complicated, which may cause maintenance problems. In addition, as the number of the first reaction gas injectors 513 and 515 is formed at the bottom of the chamber 100, the risk of vacuum leakage increases. In addition, the plurality of first reaction gas injectors 513 and 515 are each formed of a ceramic material, which is complicated when connecting the plurality of first reaction gas injectors 513 and 515 to the gas supply pipe. As a result, the risk of breakage of the first reaction gas injectors 513 and 515 formed of ceramic increases significantly.

However, in the exemplary embodiment of the present invention, the first reaction gas distribution ring portion 511 is introduced and the first reaction gas injection portions 513 and 515 are first reacted through the first reaction gas distribution ring portion 511. By distributing and supplying gas, the above problems can be solved or overcome.

3 and 5, in order to deposit a silicon oxide layer on a wafer, an oxidizing gas, for example, an oxygen gas, in addition to a silicon source gas such as silane gas, needs to be supplied into the chamber 100. Therefore, the second reaction gas injector 550 for injecting a second reaction gas such as oxygen gas is installed in the chamber 100 of the CVD equipment.

Referring to FIG. 3, the second reaction gas injector 550 also includes a second reaction gas distribution ring part 551 and a plurality of second reaction gas injection parts 553 installed in the second reaction gas distribution ring part 551. It is configured by. At this time, the second reaction gas injector 553 is configured as a straight injector.

As shown in FIG. 5, the second reaction gas distribution ring part 551 is installed at the bottom of the chamber 100, and the second reaction gas supply pipe 557 for supplying the reaction gas to the second reaction gas distribution ring part 551 is provided. The bottom of the chamber 100 is connected to the second reaction gas distribution ring 551. The second reaction gas supply pipe 557 may be supplied with a first reaction gas supplied in the chamber 100, for example, an oxygen gas as an oxidizing gas.

A plurality of second reaction gas injectors 553 may be connected to the second reaction gas distribution ring part 551. The connection of the plurality of second reaction gas injectors 553 to the second reaction gas distribution ring part 551 may be performed by the same method as described with reference to FIG. 4. These second reaction gas injectors 553 are installed so as to stand around the wafer introduced on the chuck (200 in FIG. 5). A second reaction gas, for example, oxygen gas, supplied to the second reaction gas supply pipe 557 is distributed in the second reaction gas distribution ring part 551 to be provided to each of the second reaction gas injection parts 553.

Meanwhile, the second reaction gas injector 553 may be formed of ceramic. In addition, the second reaction gas distribution ring part 551 may be formed of aluminum, stainless steel, or the like.

As such, the second reactive gas injector 550 for the second reactive gas of one of the reactive gases participating in the deposition reaction, such as silane gas, is more than the first reactive gas injector 510 as shown in FIG. 5. It is preferable to be installed at a position far from the chuck 200, and therefore, a position close to the wall surface of the chamber 100. In addition, the second reaction gas injector 550 introduces a second reaction gas distribution ring 551 as in the case of the first reaction gas injector 510, and through the second reaction gas distribution ring 551, each second By distributing and supplying the second reactive gas to the second reactive gas injecting portions 553, the problems discussed previously in the installation can be solved or overcome.

As described above, the chemical vapor deposition apparatus having the reactive gas injector according to the embodiment of the present invention does not provide a flow of the reactive gas, eg, silane gas, between the guide ring and the chuck to the edge of the wafer. Accordingly, the flow of the silane gas can be prevented from interfering with the sputtering of the oxygen gas and impairing the uniformity of the material properties (eg, deposition thickness, surface shape, shape) of the film at the center and the edge of the wafer. . In addition, with this assisted silane gas flow, it is possible to prevent the thickness uniformity of the layer deposited between the wafer and the wafer when the deposition process proceeds continuously. Embodiments of the present invention may provide a distribution or injection of a reaction gas that satisfies the deposition conditions on the wafer while achieving these effects.

As mentioned above, although this invention was demonstrated in detail through the specific Example, this invention is not limited to this, It is clear that the deformation | transformation and improvement are possible by the person of ordinary skill in the art within the technical idea of this invention.

According to the present invention described above, by improving the manner of injecting the reaction gases into the chamber of the chemical vapor deposition equipment, it is possible to effectively improve the uniformity of the material layer to be deposited, for example, silicon oxide layer.

Claims (10)

A chamber in which the deposition reaction is to proceed; A chuck supporting a wafer to be installed and mounted in the chamber; A guide ring introduced into the side of the chuck; And To supply the reaction gas required for the deposition reaction to the chamber A reaction gas supply pipe drawn in from the bottom of the chamber, a reaction gas distribution ring part for distributing the reaction gas supplied and connected to the reaction gas supply pipe, and the reaction gas distributed in connection with the reaction gas distribution ring part; And a reactant gas injector comprising a plurality of reactant gas injectors for injecting onto the wafer. The method of claim 1, The reactive gas injector comprises a straight injector installed upright from the reaction gas distribution ring portion. The method of claim 1, The reactive gas injector comprises a straight injector and a hook injector mounted upright from the reaction gas distribution ring unit. The method of claim 1, The reactive gas injecting unit injects a silicon source gas into the chamber (silicon source gas), characterized in that the chemical vapor deposition equipment. A chamber in which the deposition reaction is to proceed; A chuck supporting a wafer to be installed and mounted in the chamber; A guide ring introduced into the side of the chuck; To supply a first reaction gas required for the deposition reaction to the chamber A first reaction gas supply pipe drawn in from the bottom of the chamber, a first reaction gas distribution ring unit configured to distribute the first reaction gas supplied to and connected to the first reaction gas supply pipe, and the first reaction gas distribution A first reactant gas injector connected to a ring part and including a plurality of first reactant gas injectors for injecting the distributed first reaction gas onto the wafer; And A second reaction gas supply pipe drawn in from the bottom of the chamber, a second reaction gas distribution ring part for distributing the second reaction gas supplied to and connected to the second reaction gas supply pipe, and the second reaction gas distribution And a second reactant gas injector comprising a plurality of second reactant gas injectors connected to a ring portion to inject the distributed second reactant gas onto the wafer. The method of claim 5, Wherein the first reactive gas injector comprises a straight injector and a hook injector mounted upright from the first reactive gas distribution ring. The method of claim 5, And the first reactive gas injector injects silicon source gas into the chamber as the first reactive gas. The method of claim 5, And the second reactive gas injector comprises a straight injector mounted upright from the second reactive gas distribution ring. The method of claim 5, And the second reactive gas injector injects oxidizing gas into the chamber as the second reactive gas. The method of claim 5, Chemical vapor deposition equipment, characterized in that the second reaction gas injection unit is installed outside the first reaction gas injection unit.