JPH01223724A - Chemical vapor growth device - Google Patents

Abstract

PURPOSE:To equalize the concentration of a reaction gas on a semiconductor wafer and to make the film thickness and film quality of a thin-film deposited onto the semiconductor wafer uniform, by concentrically arranging a plurality of nozzles supplying the reaction gas while controlling the reaction gas flowing through each nozzle independently. CONSTITUTION:A semiconductor wafer 1 is placed in an atmosphere interrupted from the outside air by chambers 2, and heated by a heater 3. A desired thin- film is deposited onto the semiconductor wafer 1 by introducing a reaction gas controlled by each flow controller 4a-4c from nozzles 5a-5c respectively. Since the reaction gas fed onto the semiconductor wafer 1 at that time is controlled and supplied separately independently from a plurality of concentrically disposed nozzles 5a-5c, uniform concentration distribution can be acquired on the semiconductor wafer 1, thus also making the film thickness and film quality of the deposited thin-film equal.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the structure of a chemical vapor deposition apparatus for depositing insulating films, wiring materials, and the like.

[Conventional technology]

FIG. 3 is a sectional view showing the configuration of a conventional chemical vapor deposition apparatus, for example. In the figure, Il+ is a semiconductor wafer, (2)
is a chamber that houses this semiconductor wafer and maintains a chemical reaction atmosphere by placing four people in contact with the reaction gas; 111 values for the flow of the m,
The acid controller 6) is a nozzle that supplies this reaction gas to the semiconductor wafer in the chamber.

Next, the operation will be explained. The semiconductor wafer 11i is waxed in an atmosphere isolated from the outside air by a chamber +21 and heated by a heater (3). II (filled Bj-F
One person enters the chamber 121 from the 5 jj
Deposit %k.

[Problem to be solved by the invention]

Since the conventional chemical vapor deposition apparatus is configured as described above, the reaction gas on the semiconductor wafer Il+ is supplied to the nozzle +6.
As the reaction progresses from 1 to the exhaust port, the concentration becomes thinner, resulting in the problem that the film thickness and quality of the 1st layer V'c deposited on the semiconductor layer become uneven. .

This invention has been made to solve the above-mentioned problem I, and it is an object of the present invention to obtain a chemical vapor deposition apparatus that can make the thickness and quality of a thin film deposited on a semiconductor wafer Il+ uniform. purpose.

[Means to solve the problem]

The chemical vapor growth apparatus according to the present invention has a number of nozzles for supplying reactive gas arranged concentrically, and the reactive gas flowing to each nozzle is independently controlled.

[Effect]

The chemical vapor deposition apparatus of this invention uses a plurality of concentric nozzles to increase the concentration of gas on the semiconductor wafer.
Make it uniform.

〔Example〕

Hereinafter, a second embodiment of the present invention will be described. 1st
The figure is a sectional view showing a schematic configuration of chemical vapor deposition. In the figure,...~(31 is the same as the conventional example VC shown in FIG. 3, so M in the explanation will be avoided. (4a), (
4b), (4c) are flow controllers that control the flow of the reaction gas, (5a), (5b), (5c) H are the reaction gases r4a), (4b), (4c)' semiconductors in the iH chamber, respectively. These nozzles supply the wafer Il+, and are arranged concentrically as shown in the plan view of FIG.

I will explain the next VcD work. A semiconductor wafer Il+ is placed in an atmosphere connected to the outside air by a cha/par 121 and heated by a heater 131. Then, i by each drainage controller (4a), (4b), (4c)
tl [lilled reaction gas is sent to each nozzle r5a)
.

By introducing from (5bl, (5c)), the desired four layers are deposited on the semiconductor sea urchin 11.

As a result, the reaction gas supplied onto the semiconductor wafer is
Multiple nozzles (5a), (5b) arranged concentrically
, (5c), each is supplied separately and independently, so that a uniform concentration distribution can be obtained on the semiconductor wafer 11, and as a result, the thickness and quality of the deposited thin film can be made uniform. becomes possible.

In addition, in the above-mentioned harm, the nozzles (5a) and (5b).

Is (5c) divided into 8 parts? However, as long as there are a plurality of them, they may be arranged side by side for any number of minutes, and the same effect as in the above embodiment will be obtained.

〔Effect of the invention〕

As described above, according to the present invention, since the reactant gas is configured to be independently controlled and supplied from a plurality of nozzles arranged concentrically, it is possible to easily obtain a thin film with high reliability. be.

[Brief explanation of the drawing]

FIG. 1 is a sectional view showing a schematic configuration of a chemical vapor deposition apparatus according to an embodiment of the present invention. FIG. 2 is a plan view showing the arrangement of nozzles in FIG. FIG. 1 is a cross-sectional view showing a schematic configuration of a growth apparatus. In the figure, 111 is a semiconductor wafer, (21 chambers, 13) are heaters, (4a), (4'b), (4c)
) is the European controller, r5a), (5b), r5c)
It is an Id nozzle. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.

Claims (1)

[Claims] In chemical vapor deposition equipment that deposits thin films such as insulating films and wiring materials, it is characterized by having multiple nozzles for supplying reactive gas arranged concentrically, and controlling the reactive gas flowing to each nozzle independently. Chemical vapor deposition equipment.