JPH06151335A - Vapor growth apparatus - Google Patents
Vapor growth apparatusInfo
- Publication number
- JPH06151335A JPH06151335A JP4303541A JP30354192A JPH06151335A JP H06151335 A JPH06151335 A JP H06151335A JP 4303541 A JP4303541 A JP 4303541A JP 30354192 A JP30354192 A JP 30354192A JP H06151335 A JPH06151335 A JP H06151335A
- Authority
- JP
- Japan
- Prior art keywords
- reaction
- gas
- outlet
- cvd apparatus
- gases
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007789 gas Substances 0.000 claims abstract description 57
- 239000012495 reaction gas Substances 0.000 claims abstract description 17
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 10
- 238000001947 vapour-phase growth Methods 0.000 claims description 9
- 230000000694 effects Effects 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 description 21
- 235000012431 wafers Nutrition 0.000 description 17
- 239000010408 film Substances 0.000 description 13
- 229910052715 tantalum Inorganic materials 0.000 description 13
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 8
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 7
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 7
- 229910001882 dioxygen Inorganic materials 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 229910001936 tantalum oxide Inorganic materials 0.000 description 7
- DJCDXWHFUVBGLR-UHFFFAOYSA-N CCO[Ta] Chemical compound CCO[Ta] DJCDXWHFUVBGLR-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Landscapes
- Semiconductor Memories (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、結晶成長技術さらには
気相成長に適用して特に有効な技術に関し、例えば半導
体集積回路装置の製造に用いられるＣＶＤ装置（気相成
長装置）に利用して有用な装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a crystal growth technique and a technique which is particularly effective when applied to vapor phase growth. For example, the present invention is applied to a CVD apparatus (vapor phase growth apparatus) used for manufacturing a semiconductor integrated circuit device. And useful equipment.
【０００２】[0002]
【従来の技術】近時、例えば半導体集積回路装置の製造
プロセスにおいて、半導体ウェハ上に薄膜を気相成長さ
せる際に、ＣＶＤ装置の反応炉（チャンバ）内に半導体
ウェハを一枚ずつ導き入れることにより複数枚の半導体
ウェハを連続的に処理する所謂枚葉式のＣＶＤ装置が用
いられるようになってきている。このような枚葉式のＣ
ＶＤ装置では、薄膜の性質の均一性を良くするために、
例えば、“月刊Ｓemiconductor Ｗorld”（プレスジャ
ーナル）の第１０７頁，１２月，１９９１年、に記載さ
れているように、予め複数種類の反応ガスを混合した後
に同一の吹出し口から反応炉内に導入している。2. Description of the Related Art Recently, for example, in the manufacturing process of a semiconductor integrated circuit device, when vapor-depositing a thin film on a semiconductor wafer, each semiconductor wafer is introduced into a reaction furnace (chamber) of a CVD device. Therefore, a so-called single-wafer type CVD apparatus that continuously processes a plurality of semiconductor wafers has been used. Such a single-wafer C
In the VD device, in order to improve the uniformity of thin film properties,
For example, as described in “Monthly Semiconductor World” (Press Journal), page 107, December, 1991, a plurality of types of reaction gases are mixed in advance and then introduced into the reactor through the same outlet. is doing.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上述し
た技術には、次のような問題のあることが本発明者らに
よってあきらかとされた。すなわち、予め反応ガスを混
合しているため、吹出し口に至るガスの供給管内等で反
応が起こり、反応生成物によって供給管や吹出し口が詰
まる虞があるだけでなく、吹出し口に付着した反応生成
物が剥がれ落ち、半導体ウェハなどの試料に付着するな
ど異物発生の原因にもなっているというものである。However, the present inventors have clarified that the above-mentioned technique has the following problems. That is, since the reaction gas is mixed in advance, a reaction may occur in the gas supply pipe reaching the outlet, and the reaction product may clog the supply pipe or the outlet, and the reaction adhered to the outlet may occur. It is said that the product peels off and adheres to a sample such as a semiconductor wafer, which causes the generation of foreign matter.
【０００４】本発明はかかる事情に鑑みてなされたもの
で、反応ガスの供給状態の安定化と異物の発生の抑止に
優れた効果を発揮し得る気相成長装置を提供することを
主たる目的としている。この発明の前記ならびにそのほ
かの目的と新規な特徴については、本明細書の記述及び
添附図面から明らかになるであろう。The present invention has been made in view of the above circumstances, and a main object of the present invention is to provide a vapor phase growth apparatus capable of exhibiting excellent effects in stabilizing the supply state of the reaction gas and suppressing the generation of foreign matter. There is. The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.
【０００５】[0005]
【課題を解決するための手段】本願において開示される
発明のうち代表的なものの概要を説明すれば、下記のと
おりである。すなわち、ＣＶＤ装置の反応炉内に複数種
類の反応ガスを導入する場合に、それら各ガス種毎に個
別に反応炉内に吹出し口を設けるとともに、それら各反
応ガスの供給源と吹出し口とを個別の供給管で連結し、
各ガスの供給系を独立させた構成とした。The typical ones of the inventions disclosed in the present application will be outlined below. That is, when a plurality of types of reaction gases are introduced into the reaction furnace of a CVD apparatus, a blowout port is provided in the reaction furnace for each of these gas types, and a supply source and a blowout port for each reaction gas are provided. Connect with individual supply pipes,
Each gas supply system was made independent.
【０００６】[0006]
【作用】上記した手段によれば、各反応ガス毎に供給管
及び吹出し口が設けられているため、各ガスは途中で混
ざらず、反応炉内に導入されてから初めて混合されるの
で、供給管や吹出し口の中における反応生成物の付着を
減少乃至零にすることができる。According to the above-mentioned means, since the supply pipe and the outlet are provided for each reaction gas, the gases are not mixed in the middle of the reaction and are mixed only after being introduced into the reaction furnace. It is possible to reduce or eliminate the adhesion of reaction products in the pipe and the outlet.
【０００７】[0007]
（第１実施例）本発明に係る気相成長装置（以下、「Ｃ
ＶＤ装置」とする。）の第１実施例を図１乃至図３に示
し、以下に説明する。それらのうち、図１はＣＶＤ装置
の縦断面図、図２は図１のII−IIにおけるＣＶＤ装置の
横断面図、図３はＣＶＤ装置の変形例の縦断面図であ
る。(First Embodiment) A vapor phase growth apparatus according to the present invention (hereinafter referred to as "C
VD device ". 1) is shown in FIGS. 1 to 3 and will be described below. Among them, FIG. 1 is a vertical sectional view of the CVD apparatus, FIG. 2 is a horizontal sectional view of the CVD apparatus in II-II of FIG. 1, and FIG. 3 is a vertical sectional view of a modified example of the CVD apparatus.
【０００８】このＣＶＤ装置１は、図１及び図２に示す
ように、例えば枚葉式の装置で、複数種類（本実施例で
は２種類、第２実施例以下も同じ。）の反応ガスが各ガ
ス種毎に設けられた個別の供給管１０，１５を介して個
別の吹出し口２０，２１，２５から反応炉３０（チャン
バ）内に吹き出されるようになっているものである。吹
き出された反応ガスは反応炉３０内において混合され、
排気口４０及び排気管４１を介して排気される。図１
中、符号５０で示したものは反応生成物を堆積させる試
料、例えば半導体ウェハなどである。また、符号６０で
示したものは半導体ウェハ５０を保持するサセプタ（試
料保持台）である。As shown in FIGS. 1 and 2, the CVD apparatus 1 is, for example, a single-wafer type apparatus, and a plurality of types (two types in this embodiment, the same applies to the second and subsequent embodiments) of reaction gases. The gas is blown into the reaction furnace 30 (chamber) through the individual outlets 20, 21 and 25 through the individual supply pipes 10 and 15 provided for each gas type. The blown out reaction gases are mixed in the reaction furnace 30,
The gas is exhausted through the exhaust port 40 and the exhaust pipe 41. Figure 1
Among them, the reference numeral 50 is a sample on which a reaction product is deposited, such as a semiconductor wafer. Further, the reference numeral 60 indicates a susceptor (sample holder) for holding the semiconductor wafer 50.
【０００９】以下、例えば酸化タンタル（Ｔａ2Ｏ5）膜
を容量絶縁膜とするＤＲＡＭ（Ｄynamic Ｒandom Ａcce
ss Ｍemory）において、その酸化タンタル膜を本装置を
用いて半導体ウェハ５０上に形成する場合を例として挙
げ、説明する。酸化タンタル膜を形成する場合には、一
般に反応ガスとして、エトキシタンタルガス（Ｔａ（Ｏ
Ｃ2Ｈ5）5、以下「タンタルソースガス」とする。）
と、オゾンを含む酸素ガス（以下「酸素ソースガス」と
する。）などを用いている。これらのガスはお互いに反
応しやすいため、１００℃以下においても容易に反応が
起こり得る。Hereinafter, for example, a DRAM (Dynamic Random Accece) using a tantalum oxide (Ta 2 O 5 ) film as a capacitive insulating film is described.
In ss Memory), a case where the tantalum oxide film is formed on the semiconductor wafer 50 by using the present apparatus will be described as an example. When forming a tantalum oxide film, ethoxy tantalum gas (Ta (O
C 2 H 5 ) 5 , hereinafter referred to as “tantalum source gas”. )
And oxygen gas containing ozone (hereinafter referred to as “oxygen source gas”) and the like are used. Since these gases easily react with each other, the reaction can easily occur even at 100 ° C. or lower.
【００１０】従って、このＣＶＤ装置１においては、例
えばタンタルソースガスを供給管１０から吹出し口２
０，２１に供給し、反応炉３０内に吹き出させる一方、
吹出し口２５からは供給管１５により供給した酸素ソー
スガスを吹き出させる。供給管１０と供給管１５とは、
ガスボンベやガス発生装置などの各ガスの供給源から吹
出し口２０，２１，２５に至る経路においてそれらガス
が混ざらないように、独立して配管されている。Therefore, in this CVD apparatus 1, for example, tantalum source gas is blown out from the supply pipe 10 to the outlet 2.
0,21, while blowing out into the reaction furnace 30,
The oxygen source gas supplied by the supply pipe 15 is blown out from the outlet 25. The supply pipe 10 and the supply pipe 15 are
Pipes are independently piped so that the gases do not mix in the paths from the gas sources such as the gas cylinder and the gas generator to the outlets 20, 21, and 25.
【００１１】また、吹出し口２０，２１は供給管１０
に、吹出し口２５は供給管１５に、夫々連通接続されて
いる。そして、吹出し口２０は円形状をしていて、その
周りを吹出し口２５がリング状に囲み、さらにその外側
を吹出し口２１がリング状に囲んでいる。本実施例では
吹出し口部分が吹出し口２０，２１，２５からなる３重
構造になっているが、２重構造でもよいし、４重以上の
構造でもよい。なお、サセプタ６０を加熱するためのラ
ンプやコイルなどの熱源や、その他の設備等に付いては
省略する。The outlets 20 and 21 are connected to the supply pipe 10.
The outlets 25 are connected to the supply pipes 15, respectively. The outlet 20 has a circular shape, and the outlet 25 surrounds it in a ring shape, and the outlet 21 surrounds the outside thereof in a ring shape. In this embodiment, the air outlet has a triple structure including the air outlets 20, 21, and 25, but may have a double structure or a structure having four or more layers. It should be noted that heat sources such as a lamp and a coil for heating the susceptor 60 and other equipment are omitted.
【００１２】以上、詳述したように、第１実施例のＣＶ
Ｄ装置１によれば、タンタルソースガスや酸素ソースガ
スなどの各反応ガスは反応炉３０内に導入されてから初
めて混合されるので、供給管１０，１５や吹出し口２
０，２１，２５の中では反応が起こらない。従って、反
応生成物により供給管１０，１５や吹出し口２０，２
１，２５が詰まることがなく、反応ガスを安定して供給
することが可能となるとともに、異物の発生が極力抑え
られる。また、各反応ガス毎に流量や圧力を細かくかつ
正確に調節することができるので、性質や厚さなどの均
一性の良い膜を形成することができ、歩留りが向上す
る。As described above in detail, the CV of the first embodiment
According to the D device 1, the reaction gases such as the tantalum source gas and the oxygen source gas are mixed for the first time after being introduced into the reaction furnace 30, so that the supply pipes 10 and 15 and the outlet 2
No reaction occurs in 0, 21, 25. Therefore, depending on the reaction product, the supply pipes 10 and 15 and the outlets 20 and 2
It is possible to stably supply the reaction gas without clogging the 1, 25, and to suppress the generation of foreign matter as much as possible. Further, since the flow rate and pressure can be finely and accurately adjusted for each reaction gas, it is possible to form a film with good uniformity in properties and thickness, thus improving the yield.
【００１３】なお、タンタルソースガスの吹出し口と酸
素ソースガスの吹出し口を必ずしも交互に配設させる必
要はなく、例えば図３に変形例として示すＣＶＤ装置２
のように、同一種のガスの吹出し口を隣合せに配設させ
てもよい。図３では、タンタルソースガス用の吹出し口
２０ａの周りに同じくタンタルソースガス用の吹出し口
２０ｂ、その周りに酸素ソースガス用の吹出し口２５
ａ，２５ｂ、さらにその周りにタンタルソースガス用の
吹出し口１１ａ，１１ｂ，１１ｃが配設されている。そ
れら吹出し口２０ａ，２０ｂ，２１ａ，２１ｂ，２１
ｃ，２５ａ，２５ｂには、夫々供給管１０ａ，１０ｂ，
１１ａ，１１ｂ，１１ｃ，１５ａ，１５ｂが連通接続さ
れている。The tantalum source gas outlets and the oxygen source gas outlets do not necessarily have to be alternately arranged. For example, the CVD apparatus 2 shown in FIG. 3 as a modified example.
As described above, the outlets for the same type of gas may be arranged next to each other. In FIG. 3, a tantalum source gas outlet 20a is also provided around the tantalum source gas outlet 20a, and an oxygen source gas outlet 25 is provided around the same.
a, 25b, and the blowout ports 11a, 11b, 11c for the tantalum source gas are arranged around them. Those outlets 20a, 20b, 21a, 21b, 21
Supply pipes 10a, 10b, c, 25a, 25b,
11a, 11b, 11c, 15a and 15b are connected for communication.
【００１４】この場合、外側に位置している吹出し口か
ら導入される反応ガスの圧力や流量を内側のものよりも
大きくすることにより、半導体ウェハ５０の外側におい
て反応ガスが希薄になるのを防ぐことができる。具体的
には、例えば吹出し口２０ａ，２０ｂ，２１ａ，２１
ｂ，２１Ｃの順でタンタルソースガスの圧力や流量を大
きくし、酸素ソースガスに付いても同様に吹出し口２５
ａ，２５ｂの順で大きくすればよい。In this case, the reaction gas is prevented from being diluted outside the semiconductor wafer 50 by making the pressure and flow rate of the reaction gas introduced from the blowout port located on the outside larger than that of the inside. be able to. Specifically, for example, the outlets 20a, 20b, 21a, 21
The pressure and the flow rate of the tantalum source gas are increased in the order of b and 21C, and the outlet 25 is also provided even if the tantalum source gas is attached to the oxygen source gas.
It may be increased in the order of a and 25b.
【００１５】（第２実施例）本発明に係るＣＶＤ装置の
第２実施例を図４及び図５に示し、以下に説明する。そ
れらのうち、図４はＣＶＤ装置の縦断面図、図５はＣＶ
Ｄ装置の変形例の縦断面図である。なお、第１実施例と
同一の部材等については同一の符号を付し、その説明を
省略する。(Second Embodiment) A second embodiment of the CVD apparatus according to the present invention is shown in FIGS. 4 and 5 and will be described below. Among them, FIG. 4 is a vertical sectional view of the CVD apparatus, and FIG. 5 is a CV.
It is a longitudinal cross-sectional view of a modified example of the D device. The same members and the like as those in the first embodiment are designated by the same reference numerals and the description thereof will be omitted.
【００１６】このＣＶＤ装置３が第１実施例の装置と異
なるのは、以下の点である。すなわち、タンタルソース
ガス及び酸素ソースガスを、図４に示す矢印のように半
導体ウェハ５０に向かって吹き出させるために、吹出し
口２０，２１，２５が反応炉３０の中心側に向けて開口
させられている点である。The CVD apparatus 3 differs from the apparatus of the first embodiment in the following points. That is, in order to blow out the tantalum source gas and the oxygen source gas toward the semiconductor wafer 50 as shown by the arrows in FIG. 4, the blowout ports 20, 21, 25 are opened toward the center of the reaction furnace 30. That is the point.
【００１７】このようにすれば、反応炉３０内へ導入し
たガスが半導体ウェハ５０の近傍部分に集中し、反応炉
３０の側壁に反応生成物が付着するのを防ぐことができ
るので、異物の発生を抑えることができるだけでなく、
装置の清掃等のメインテナンスも簡略化される。By doing so, it is possible to prevent the gas introduced into the reaction furnace 30 from concentrating in the vicinity of the semiconductor wafer 50 and adhering the reaction products to the side wall of the reaction furnace 30. Not only can you suppress the occurrence,
Maintenance such as cleaning of the device is also simplified.
【００１８】なお、必ずしも全部の吹出し口を中心側に
向ける必要はなく、例えば最も外側の吹出し口２１だけ
を中心側に向けるなど、生成された膜の均一性等を考慮
して適宜設定すればよい。Incidentally, it is not always necessary to direct all the blowout ports to the center side, and for example, only the outermost blowout ports 21 may be directed to the center side, and may be appropriately set in consideration of the uniformity of the formed film. Good.
【００１９】また、吹出し口２０，２１，２５を中側に
向ける代わりに、例えば図５に変形例として示すＣＶＤ
装置４のように、それら吹出し口２０，２１，２５を夫
々細かく分割し、それらの開口端の高さを反応炉３０の
外側に行くに連れて低くなるようにする、すなわち半導
体ウェハ５０の中心から周端に遠ざかるに連れて半導体
ウェハ５０に近づけるようにしてもよい。具体的には、
例えば吹出し口２０を吹出し口２０ｃ，２０ｄに二分割
し、吹出し口２１を吹出し口２１ｄ，２１ｅ，２１ｆに
三分割して、吹出し口２０ｃ，２０ｄ，２１ｄ，２１
ｅ，２１ｆの順で低くし、一方吹出し口２５を吹出し口
２５ｃ，２５ｄに二分割して、吹出し口２５ｃ，２５ｄ
の順で低くすればよい。Further, instead of directing the blowout ports 20, 21, and 25 to the inside, for example, a CVD shown as a modified example in FIG.
As in the device 4, the outlets 20, 21 and 25 are each finely divided so that the heights of the opening ends thereof become lower toward the outside of the reaction furnace 30, that is, the center of the semiconductor wafer 50. The semiconductor wafer 50 may be moved closer to the outer edge of the semiconductor wafer 50. In particular,
For example, the outlet 20 is divided into two outlets 20c and 20d, the outlet 21 is divided into three outlets 21d, 21e and 21f, and the outlets 20c, 20d, 21d and 21 are divided into three.
e and 21f in that order, while the outlet 25 is divided into two outlets 25c and 25d, and outlets 25c and 25d
It should be lowered in the order of.
【００２０】（第３実施例）本発明に係るＣＶＤ装置の
第３実施例を、その縦断面図を図６に示し、以下に説明
する。なお、第１実施例と同一の部材等については同一
の符号を付し、その説明を省略する。(Third Embodiment) A third embodiment of the CVD apparatus according to the present invention is shown in the longitudinal sectional view of FIG. 6 and will be described below. The same members and the like as those in the first embodiment are designated by the same reference numerals and the description thereof will be omitted.
【００２１】このＣＶＤ装置５が第１実施例の装置と異
なるのは、吹出し口（２０，２１）と２５が、各々上下
動機構（図示省略）によって高さ調整可能になっている
点である。また、吹出し口（２０，２１）と２５の何れ
か一方の吹出し口のみが上下動可能になっていてもよ
い。吹出し口２０，２１、すなわち同一種のガスの吹出
し口は連動して上下動可能になっていてもよいし、それ
らが独立して上下動可能になっていてもよい。The CVD apparatus 5 is different from the apparatus of the first embodiment in that the outlets (20, 21) and 25 can be adjusted in height by vertical moving mechanisms (not shown). . Further, only one of the outlets (20, 21) and 25 may be vertically movable. The blowout ports 20 and 21, that is, the blowout ports of the same type of gas may be vertically movable in conjunction with each other, or may be vertically movable independently.
【００２２】この装置において、例えば酸素ソースガス
用の吹出し口２５をタンタルソースガス用の吹出し口２
０，２１よりも半導体ウェハ５０に近づけて、より多く
の酸素ソースガスを供給することによって、例えばＣＶ
Ｄ装置により生成された酸化タンタル膜において一般に
知られている酸素原子の不足に起因する絶縁性の低下と
いう欠点をなくすことができる。従って、性質や厚さの
均一性が良く、絶縁性に優れた膜を形成することができ
る。In this apparatus, for example, the outlet 25 for oxygen source gas is replaced with the outlet 2 for tantalum source gas.
By supplying more oxygen source gas closer to the semiconductor wafer 50 than 0,21, for example, CV
In the tantalum oxide film produced by the D device, it is possible to eliminate the generally known defect that the insulating property is deteriorated due to the lack of oxygen atoms. Therefore, it is possible to form a film having excellent properties and thickness uniformity and excellent insulating properties.
【００２３】（第４実施例）本発明に係るＣＶＤ装置の
第４実施例を、その縦断面図を図７に示し、以下に説明
する。なお、第１実施例と同一の部材等については同一
の符号を付し、その説明を省略する。(Fourth Embodiment) A fourth embodiment of the CVD apparatus according to the present invention will be described below with a vertical sectional view thereof shown in FIG. The same members and the like as those in the first embodiment are designated by the same reference numerals and the description thereof will be omitted.
【００２４】このＣＶＤ装置６が第１実施例の装置と異
なるのは、以下の点である。すなわち、図７に示すよう
に、反応ガス以外にも、反応炉３０内に導入する例えば
キャリアガスなどの不活性ガス等に付いても、他のガス
供給系から独立した供給管１９及び吹出し口２９が設け
られている点である。そして、第３実施例と同様に吹出
し口２９が上下動可能になっているとなおよい。The CVD apparatus 6 is different from the apparatus of the first embodiment in the following points. That is, as shown in FIG. 7, in addition to the reaction gas, even if an inert gas such as a carrier gas introduced into the reaction furnace 30 is attached, the supply pipe 19 and the outlet are independent from other gas supply systems. 29 is provided. Further, it is more preferable that the outlet 29 can be moved up and down as in the third embodiment.
【００２５】例として、図７においては、酸化タンタル
膜の成膜時に半導体ウェハ５０にＵＶ光（紫外線）を照
射することによって、オゾンガスの励起を促し、酸化タ
ンタル膜の酸素原子不足による欠陥の修復効果を向上さ
せている。そのため、このＣＶＤ装置６にはＵＶ光源７
０が設置され、その表面に吹出し口２９から窒素ガスを
吹き付けて、このＵＶ光源７０の表面に反応生成物が付
着するのを防いでいる。As an example, in FIG. 7, by irradiating the semiconductor wafer 50 with UV light (ultraviolet light) during the formation of the tantalum oxide film, the ozone gas is promoted to be excited, and the defects due to the lack of oxygen atoms in the tantalum oxide film are repaired. The effect is improved. Therefore, the CVD apparatus 6 has a UV light source 7
0 is installed, and nitrogen gas is blown to the surface of the UV light source 29 to prevent the reaction product from adhering to the surface of the UV light source 70.
【００２６】このようにすれば、ＵＶ光源７０の表面が
くもるのを防ぐことができ、装置を長時間稼働させても
欠陥修復効果が劣化せず、性質の良い酸化タンタル膜を
形成することができる。By doing so, it is possible to prevent the surface of the UV light source 70 from becoming cloudy, the defect repairing effect does not deteriorate even when the apparatus is operated for a long time, and a tantalum oxide film having good properties can be formed. it can.
【００２７】なお、吹出し口２９から不活性ガス等を導
入する目的は、上述したＵＶ光源７０の表面のくもり防
止に限らないのはいうまでもない。Needless to say, the purpose of introducing the inert gas or the like from the blowout port 29 is not limited to the prevention of clouding of the surface of the UV light source 70 described above.
【００２８】以上本発明者によってなされた発明を実施
例に基づき具体的に説明したが、本発明は上記第１〜第
４実施例に限定されるものではなく、その要旨を逸脱し
ない範囲で種々変更可能であることはいうまでもない。
例えば、上記実施例においては、酸素ソースガスとして
オゾンを含む酸素ガスを用いているが、酸素ガス及びオ
ゾンガスの何れか一方だけでもよい。また、オゾンを含
まない酸素ガスとタンタルソースガスとの反応性は低い
ので、タンタルソースガスと酸素ガスを同じ吹出し口か
ら導入してもよい。さらに、上記第１〜第４実施例で
は、何れもエトキシタンタルガスとオゾンを含む酸素ガ
スとから酸化タンタル膜を形成する場合に付いて説明し
たが、エトキシタンタルガスやオゾンを含む酸素ガス以
外の反応ガスを用いてもよいのはいうまでもないし、ま
た酸化ハフニウム（ＨｆＯ2）、酸化ジルコニウム（Ｚ
ｒ０2）、チタン酸ストロンチウム（ＳｒＴｉＯ3）、チ
タン酸バリウム（ＢａＴｉＯ3）、窒化シリコン（Ｓｉ3
Ｎ4）、タングステンシリサイドなどの膜を、異なる２
種類以上の反応ガスを用いて形成する場合にも適用する
ことができる。さらにまた、本発明は枚葉式のＣＶＤ装
置に限らず、一度に複数枚の半導体ウェハを処理する所
謂バッチ式のＣＶＤ装置にも適用できる。Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the above first to fourth embodiments, and various modifications can be made without departing from the scope of the invention. It goes without saying that it can be changed.
For example, although the oxygen gas containing ozone is used as the oxygen source gas in the above embodiment, only one of the oxygen gas and the ozone gas may be used. Further, since the reactivity of oxygen gas not containing ozone and tantalum source gas is low, the tantalum source gas and oxygen gas may be introduced from the same outlet. Further, in each of the above-mentioned first to fourth embodiments, the case where the tantalum oxide film is formed from the ethoxy tantalum gas and the oxygen gas containing ozone has been described, but other than the oxygen gas containing ethoxy tantalum gas and ozone. It goes without saying that a reaction gas may be used, and hafnium oxide (HfO 2 ) and zirconium oxide (Z
r0 2 ), strontium titanate (SrTiO 3 ), barium titanate (BaTiO 3 ), silicon nitride (Si 3
N 4 ), tungsten silicide, etc.
It can also be applied to the case where the reaction gas of more than one kind is used. Furthermore, the present invention is not limited to the single-wafer CVD apparatus, but can be applied to a so-called batch-type CVD apparatus that processes a plurality of semiconductor wafers at a time.
【００２９】以上の説明では主として本発明者によって
なされた発明をその背景となった利用分野である半導体
集積回路装置の製造に用いられるＣＶＤ装置に適用した
場合について説明したが、この発明はそれに限定される
ものではなく、気相成長法による結晶成長技術に広く利
用することができる。In the above description, the invention mainly made by the present inventor has been described as applied to a CVD apparatus used for manufacturing a semiconductor integrated circuit device, which is the field of application of the invention, but the invention is not limited thereto. However, it can be widely used for a crystal growth technique by a vapor phase growth method.
【００３０】[0030]
【発明の効果】本願において開示される発明のうち代表
的なものによって得られる効果を簡単に説明すれば下記
のとおりである。すなわち、各反応ガスは反応炉内に導
入されてから初めて混合されるので、供給管や吹出し口
の中における反応生成物の付着が減るか若しくは零にな
り、反応生成物により供給管や吹出し口が詰まるという
事態の発生を回避することができ、反応ガスを安定して
供給することが可能となるとともに、異物の発生を極力
減少させることも可能となり、ひいては性質や厚さなど
の均一性の良い膜を形成することができ、歩留りが向上
する。The effects obtained by the representative one of the inventions disclosed in the present application will be briefly described as follows. That is, since each reaction gas is mixed for the first time after being introduced into the reaction furnace, the adhesion of the reaction product in the supply pipe and the outlet is reduced or becomes zero, and the reaction product causes the supply pipe and the outlet to be mixed. It is possible to avoid the occurrence of a situation in which the gas is clogged, it is possible to stably supply the reaction gas, and it is also possible to reduce the generation of foreign matter as much as possible, which eventually leads to the uniformity of properties and thickness. A good film can be formed and the yield is improved.
【図１】第１実施例におけるＣＶＤ装置の縦断面図であ
る。FIG. 1 is a vertical sectional view of a CVD apparatus according to a first embodiment.
【図２】図１のII−IIにおけるＣＶＤ装置の横断面図で
ある。FIG. 2 is a cross-sectional view of the CVD apparatus taken along the line II-II in FIG.
【図３】第１実施例におけるＣＶＤ装置の変形例の縦断
面図である。FIG. 3 is a vertical sectional view of a modification of the CVD apparatus according to the first embodiment.
【図４】第２実施例におけるＣＶＤ装置の縦断面図であ
る。FIG. 4 is a vertical sectional view of a CVD apparatus according to a second embodiment.
【図５】第２実施例におけるＣＶＤ装置の変形例の縦断
面図である。FIG. 5 is a vertical sectional view of a modification of the CVD apparatus in the second embodiment.
【図６】第３実施例におけるＣＶＤ装置の縦断面図であ
る。FIG. 6 is a vertical sectional view of a CVD apparatus according to a third embodiment.
【図７】第４実施例におけるＣＶＤ装置の縦断面図であ
る。FIG. 7 is a vertical sectional view of a CVD apparatus according to a fourth embodiment.
１，２，３，４，５，６ ＣＶＤ装置（気相成長装置） １０，１０ａ〜ｂ，１１ａ〜ｃ，１５，１５ａ〜ｂ 供
給管 ２０，２０ａ〜ｄ，２１，２１ａ〜ｆ，２５，２５ａ〜
ｄ 吹出し口 ３０ 反応炉 ５０ 半導体ウェハ（試料）1,2,3,4,5,6 CVD apparatus (vapor phase growth apparatus) 10,10a-b, 11a-c, 15,15a-b Supply pipe 20,20a-d, 21,21a-f, 25, 25a ~
d Air outlet 30 Reactor 50 Semiconductor wafer (sample)
Claims (3)
に導入させてなる気相成長装置において、前記反応炉内
に反応ガスを導くガスの供給管及び吹出し口が夫々反応
ガスの種類毎に独立して少なくとも一つずつ設けられて
いることを特徴とする気相成長装置。1. In a vapor phase growth apparatus in which at least two kinds of reaction gases are introduced into a reaction furnace, a gas supply pipe for introducing the reaction gas into the reaction furnace and an outlet are provided for each kind of reaction gas. A vapor phase growth apparatus characterized in that at least one of each is provided independently.
配設された吹出し口が、反応生成物を堆積させる試料の
中心方向に向けられて開口させられていることを特徴と
する請求項１記載の気相成長装置。2. The outlet, which is disposed at least at the outermost portion of the outlets, is opened toward the center of the sample on which the reaction product is deposited. Vapor growth equipment.
が、上下動可能になっていることを特徴とする請求項１
又は２記載の気相成長装置。3. An outlet for at least one kind of reaction gas is vertically movable.
Or the vapor phase growth apparatus according to 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4303541A JPH06151335A (en) | 1992-11-13 | 1992-11-13 | Vapor growth apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4303541A JPH06151335A (en) | 1992-11-13 | 1992-11-13 | Vapor growth apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06151335A true JPH06151335A (en) | 1994-05-31 |
Family
ID=17922242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4303541A Pending JPH06151335A (en) | 1992-11-13 | 1992-11-13 | Vapor growth apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06151335A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000038764A (en) * | 1998-12-09 | 2000-07-05 | 신현준 | Gas injection apparatus for thin layer evaporation of semiconductor wafer |
-
1992
- 1992-11-13 JP JP4303541A patent/JPH06151335A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000038764A (en) * | 1998-12-09 | 2000-07-05 | 신현준 | Gas injection apparatus for thin layer evaporation of semiconductor wafer |
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