KR20130054618A - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

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Publication number
KR20130054618A
KR20130054618A KR1020110120107A KR20110120107A KR20130054618A KR 20130054618 A KR20130054618 A KR 20130054618A KR 1020110120107 A KR1020110120107 A KR 1020110120107A KR 20110120107 A KR20110120107 A KR 20110120107A KR 20130054618 A KR20130054618 A KR 20130054618A
Authority
KR
South Korea
Prior art keywords
substrate
substrate support
exhaust port
gas
baffle
Prior art date
Application number
KR1020110120107A
Other languages
Korean (ko)
Inventor
박해윤
Original Assignee
주식회사 원익아이피에스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 원익아이피에스 filed Critical 주식회사 원익아이피에스
Priority to KR1020110120107A priority Critical patent/KR20130054618A/en
Publication of KR20130054618A publication Critical patent/KR20130054618A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Abstract

PURPOSE: A substrate processing apparatus is provided to improve the uniformity of a substrate process by reducing the process delay generated in the vicinity of the apex of a substrate supporter. CONSTITUTION: A process chamber has a process space. A gas injector sprays gas to the process space. A substrate supporter supports a substrate. A discharge port(160) emits the gas from the process space to the outside. A corner baffle(120) is adjacent to the apex of the substrate supporter.

Description

Substrate Processing Equipment {SUBSTRATE PROCESSING APPARATUS}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus that performs a predetermined processing process on a substrate such as annealing, vapor deposition, and etching.

The substrate treating apparatus generally refers to an apparatus for performing substrate treatment, such as depositing and etching a surface of a substrate seated on a substrate support by applying a power to a closed treatment space to form a plasma.

In this case, the substrate processing apparatus includes a top lead and a chamber main body coupled to each other to form a processing space, a gas injection unit installed below the top lead to inject a gas for processing the substrate into the processing space, and a substrate for processing the substrate. It comprises a substrate support for supporting.

On the other hand, the substrate processing apparatus has a problem in that the substrate processing according to the position of the substrate support is not uniform due to the asymmetry of the processing environment due to the gate formation and the distortion of the gas flow at the vertex of the rectangular substrate support.

In particular, the conventional substrate processing apparatus is injected by the gas injector in the vicinity of the vertex of the rectangular substrate support (the space where the gas is diffused compared with other points, the flow rate and flow rate of the gas exhausted through the baffle is relatively small) The flow rate and flow rate of the gas are small, which causes a problem in that the substrate treatment is not smooth due to a relatively small gas flow rate at a position corresponding to the vertex of the substrate support, for example, relative to one side of the substrate support. .

An object of the present invention is to provide a substrate processing apparatus that can improve the flow rate and flow rate of the gas near the vertex of the substrate support in the processing space of the process chamber.

The present invention has been made in order to achieve the object of the present invention as described above, the present invention comprises a process chamber is formed; A gas injection unit for injecting gas into the processing space of the process chamber; A substrate support installed in the process chamber to support a substrate and having a rectangular shape; An exhaust port for discharging gas in the processing space; And a corner baffle disposed adjacent to a vertex of the substrate support, the corner baffle having one or more exhaust ports communicating with the exhaust port to increase a flow rate of gas flowing near the vertex of the substrate support. It starts.

Preferably, the height of the exhaust port corresponds to the height of the substrate support surface of the substrate support.

The corner baffle may further include an extension part connected to the exhaust port and extending upward from a bottom surface of the process chamber, and the exhaust port may be formed on an upper surface of the extension part. Therefore, it is possible to effectively increase the flow rate of the gas in the vicinity of the vertex of the substrate support.

The corner baffle may have a horizontal cross section having a '-' shape so as to correspond to a vertex of the substrate support surface of the substrate support.

The substrate processing apparatus may further include side baffles disposed along the sides of the substrate support between the corner baffles adjacent to each other, and an exhaust port of the corner baffles may be positioned higher than an exhaust port of the side baffles.

The opening ratio of the exhaust port of the corner baffle may be greater than the opening ratio of the exhaust port of the side baffle.

The substrate support may be configured as a heater.

The substrate processing apparatus according to the present invention further improves the gas flow near the vertex of the substrate support having a rectangular shape, for example, by providing a corner baffle that can increase the flow rate of the gas, thereby providing the substrate near the vertex of the substrate support. There is an advantage of improving the uniformity of the substrate treatment according to the position of the substrate on the substrate support by reducing the deviation of the treatment.

1 is a side cross-sectional view showing a substrate processing apparatus according to the present invention.
FIG. 2 is a plan sectional view of the substrate processing apparatus of FIG. 1.
3 is an enlarged perspective view illustrating a corner baffle portion of the substrate treating apparatus of FIG. 1.
4 is a diagram illustrating a flow of gas on a substrate support of the substrate processing apparatus of FIG. 1, and FIG. 5 is a diagram showing a flow of gas on a substrate support of the substrate processing apparatus of the prior art.

Hereinafter, the substrate treating apparatus according to the present invention will be described in detail with reference to the accompanying drawings.

1 is a side cross-sectional view showing a substrate processing apparatus according to the present invention, FIG. 2 is a plan sectional view of the substrate processing apparatus of FIG. 1, and FIG. 3 is an enlarged perspective view showing a corner baffle portion of the substrate processing apparatus of FIG.

As shown in FIGS. 1 and 2, the substrate treating apparatus according to the present invention includes a process chamber 100 in which a processing space S for substrate processing is formed, and a gas into the processing space S of the process chamber 100. A gas injection unit 170 for spraying the gas, a substrate support 110 installed in the process chamber 100 to support the substrate 14 and having a rectangular shape, and an exhaust port through which gas in the processing space S is discharged; At least one corner baffle 120 disposed adjacent to a vertex of the substrate support 110 and having at least one exhaust port 121 communicating with the exhaust port to increase a flow rate of gas flowing near the vertex of the substrate support 110. ).

Here, the substrate treatment may be performed on various substrates such as deposition and etching.

The substrate 14 to be subjected to substrate treatment may be any substrate such as an LCD panel glass substrate or a solar cell substrate, as long as the substrate requires substrate treatment such as etching.

The process chamber 100 is a configuration for forming a closed processing space (S) for substrate processing, various configurations are possible according to the substrate processing, as shown in Figure 1, detachably coupled to each other processing It may be configured to include a chamber body 130 and a top lead 131 forming a space (S). Here, the substrate treatment performed by the substrate processing apparatus according to the present invention includes an etching process for etching the surface of the substrate 14 by forming a plasma in a vacuum state.

The chamber body 130 may be configured in various ways according to design and design, and may be opened and closed by a gate valve so that the substrate 14 may be directly admitted or the tray (not shown) on which the substrate 14 is seated may be admitted. At least one gate 132 and 133 may be formed.

The top lead 131 is combined with the chamber main body 130 to form a closed processing space (S) is possible in a variety of configurations, it is possible to form a variety, such as plate shape, bowl shape.

The substrate support 110 is a substrate 14 is directly seated, or a tray on which the substrates 14 are seated, the power is applied so that a reaction for substrate processing such as plasma formation in the processing space (S) can occur A lower electrode (not shown) may be installed.

In particular, the substrate support 110 has a substantially rectangular planar shape for substrate processing such as a glass substrate for an LCD panel, a rectangular solar cell substrate, or a plurality of solar cell substrates arranged in a rectangular shape. Have

The substrate support 110 may have a variety of structures according to the type of substrate treatment, may be provided with a heater or may be composed of a heater itself.

The gas injection unit 170 is a so-called shower head, which is installed on the upper side of the processing space S and is supplied from an external gas supply device (not shown) to inject the processing gas into the processing space S. Various configurations are possible depending on the type, number and injection method.

The exhaust port discharges gas in the processing space S, and is configured for pressure and exhaust of the processing space S, and various configurations are possible.

As an example, the exhaust port may include an exhaust pipe connected to one or more exhaust ports 160 formed on the bottom, side, or the like of the chamber body 130, and connected to a vacuum pump.

On the other hand, the gas is injected from the gas injection unit 170 to the substrate processing on the upper side of the substrate support 110, the flow rate of the gas in the center of the substrate support 110 is relatively large and relatively small toward the edge.

In particular, this phenomenon is intensified in the vicinity of the vertex of the substrate support 110, a relatively small gas flow rate causes a non-uniformity of the substrate processing on the substrate support 110.

Accordingly, the substrate processing apparatus may include a corner baffle 120 to improve this, thereby increasing the gas flow rate near the vertex of the substrate support 110 to improve uniformity of the substrate processing process.

1 to 3, the corner baffle 120 is disposed adjacent to the vertex of the substrate support 110, the exhaust port so that the flow rate of the gas flowing in the vicinity of the vertex of the substrate support 110 is increased Any configuration may be used as long as one or more exhaust ports 121 are formed in communication therewith.

The corner baffle 120 may have any configuration and structure as long as the flow rate of the gas flowing near the vertex of the substrate support 110 may be increased, and the gas flow may be improved near the vertex of the substrate support 110. To this end, the substrate support 110 may be formed in a shape surrounding the side of the vertex.

Therefore, the corner baffle 120 may have a 'a' shape or an inverted 'a' shape so that an inner circumference of the cross-sectional shape corresponds to a side surface near the vertex of the substrate support 110.

In addition, the corner baffle 120 may be formed in a 'b' shape of the entire cross section in consideration of spatial advantages. However, the cross section of the corner baffle 120 may be made of various shapes such as a cylinder or a polygonal pillar as the case may be.

Meanwhile, the corner baffles 120 may be spaced apart from the side of the substrate support 110 by a predetermined interval.

The exhaust port 121 is in communication with the exhaust port to increase the gas flow, in particular the flow rate of the gas in the vicinity of the vertex of the substrate support 110 may have a variety of shapes and structures.

The height of the exhaust port 121 may be formed to correspond to the height of the substrate supporting the substrate 14 in the substrate support 110.

In addition, the height of the exhaust port 121 may correspond to the height of the upper surface of the substrate 14 seated on the substrate support 110.

As an example of the corner baffle 120, as illustrated in FIG. 3, the corner baffle 120 may further include an extension part 122 connected to the exhaust port and extending upward from the bottom of the process chamber 100. Here, the exhaust port 121 may be formed on at least one of the upper surface and the side surface of the extension part 122.

Meanwhile, the substrate treating apparatus may include one or more side baffles 140 installed along the sides of the substrate support 110 between corner baffles 120 adjacent to each other so as to efficiently perform gas exhaust of the processing space S. ) May be additionally installed.

At this time, the exhaust port 121 of the corner baffle 120 is preferably located higher than the exhaust port 141 of the side baffle 140.

In addition, the opening ratio of the exhaust port 121 of the corner baffle 120 may be greater than the opening ratio of the exhaust port 141 of the side baffle 140.

4 is a diagram illustrating a flow of gas on a substrate support of the substrate processing apparatus of FIG. 1, and FIG. 5 is a diagram showing a flow of gas on a substrate support of the substrate processing apparatus of the prior art.

As described above, the substrate processing apparatus according to the present invention further includes a corner baffle for improving gas flow in the vicinity of a vertex of a rectangular substrate support, thereby improving substrate processing.

Specifically, Fig. 5 shows the flow of gas on the substrate support of the substrate processing apparatus of the prior art, and Fig. 4 shows the flow of gas on the substrate support of the substrate processing apparatus according to the present invention. It can be seen that the flow of gas at

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention as defined in the appended claims. It is to be understood that both the technical idea and the technical spirit of the invention are included in the scope of the present invention.

14 substrate 100 process chamber
110 substrate support 120 corner baffle
121 Exhaust 130 Chamber body
160.Exhaust port

Claims (7)

A process chamber in which a processing space is formed;
A gas injection unit for injecting gas into the processing space of the process chamber;
A substrate support installed in the process chamber to support a substrate and having a rectangular shape;
An exhaust port for discharging gas in the processing space;
And a corner baffle disposed adjacent to a vertex of the substrate support, the corner baffle being formed in communication with the exhaust port to increase the flow rate of gas flowing near the vertex of the substrate support. The method according to claim 1,
The height of the exhaust port is a substrate processing apparatus, characterized in that corresponding to the height of the substrate support surface of the substrate support. The method according to claim 1,
The corner baffle further includes an extension part connected to the exhaust port and extending upward from a bottom surface of the process chamber.
And the exhaust port is formed on an upper surface of the extension part. The method according to claim 1,
The corner baffle is substrate processing apparatus, characterized in that formed in the 'b' shape to correspond to the vertex of the substrate support surface of the substrate support. The method according to any one of claims 1 to 4,
Between the corner baffles adjacent to each other is further provided a side baffle is installed along the side of the substrate support,
And an exhaust port of the corner baffle is positioned higher than an exhaust port of the side baffle. The method according to claim 5,
And an opening ratio of an exhaust port of the corner baffle is larger than an opening ratio of an exhaust port of the side baffle. The method according to any one of claims 1 to 4,
And the substrate support is a heater.
KR1020110120107A 2011-11-17 2011-11-17 Substrate processing apparatus KR20130054618A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020110120107A KR20130054618A (en) 2011-11-17 2011-11-17 Substrate processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110120107A KR20130054618A (en) 2011-11-17 2011-11-17 Substrate processing apparatus

Publications (1)

Publication Number Publication Date
KR20130054618A true KR20130054618A (en) 2013-05-27

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Application Number Title Priority Date Filing Date
KR1020110120107A KR20130054618A (en) 2011-11-17 2011-11-17 Substrate processing apparatus

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101629213B1 (en) 2015-02-02 2016-06-10 (주) 일하하이텍 Apparatus and method of processing substrate
CN105789092A (en) * 2016-03-25 2016-07-20 京东方科技集团股份有限公司 Substrate processing device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101629213B1 (en) 2015-02-02 2016-06-10 (주) 일하하이텍 Apparatus and method of processing substrate
CN105789092A (en) * 2016-03-25 2016-07-20 京东方科技集团股份有限公司 Substrate processing device

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