KR101118477B1 - Gas distribution plate and process chamber having the same - Google Patents

Gas distribution plate and process chamber having the same Download PDF

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Publication number
KR101118477B1
KR101118477B1 KR1020090115350A KR20090115350A KR101118477B1 KR 101118477 B1 KR101118477 B1 KR 101118477B1 KR 1020090115350 A KR1020090115350 A KR 1020090115350A KR 20090115350 A KR20090115350 A KR 20090115350A KR 101118477 B1 KR101118477 B1 KR 101118477B1
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KR
South Korea
Prior art keywords
gas
formed
hole
distribution plate
gas inlet
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KR1020090115350A
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Korean (ko)
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KR20110058527A (en
Inventor
김동건
김범성
노동민
마희전
이돈희
하주일
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주식회사 테스
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Abstract

Disclosed are a gas dispersion plate and a process chamber having the same, which can shorten the manufacturing time and reduce the manufacturing cost. The gas distribution plate may include a gas inlet hole formed on a first surface side through which gas is introduced, a through hole extending in a second surface direction in which gas is injected from the gas inlet hole, and at least two connected to each gas inlet hole; At least one gas injection hole extending from the through holes to the second surface and having a size larger than that of the through holes. In this way, the gas inlet hole is formed to be largely connected to the two or more through holes in common, thereby shortening the manufacturing time of the gas dispersion plate and reducing the manufacturing cost.

Description

GAS DISTRIBUTION PLATE AND PROCESS CHAMBER HAVING THE SAME

The present invention relates to a gas dispersion plate and a process chamber having the same, and more particularly, to a gas dispersion plate and a process chamber having the same evenly spraying the process gas on the substrate to be processed.

In general, among semiconductor manufacturing processes for manufacturing devices such as integrated circuit devices, liquid crystal displays, solar cells, and the like, a process of forming a thin film on a substrate to be processed is performed by plasma enhanced chemical vapor deposition (PECVD). Proceeds through the device.

The PECVD apparatus includes a substrate support formed in an inner space of the chamber body to support and heat the substrate, and a showerhead formed on top of the substrate support to inject a process gas toward the substrate. The showerhead includes an electrode plate to which high frequency power is connected, and a gas distribution plate in which a plurality of holes are formed for injection of gas. A gas diffusion space through which the gas can be diffused is provided between the electrode plate and the gas dispersion plate by combining the electrode plate and the gas dispersion plate. The gas introduced through the gas inlet formed in the electrode plate is diffused in the gas diffusion space and then injected into the target substrate through the holes of the gas distribution plate.

The hole formed in the gas distribution plate has a gas inlet hole formed in a portion where gas is introduced, a gas injection hole formed in a portion where gas is injected, and a smaller diameter than the gas inlet hole and gas injection hole. It has a structure including a through hole connecting the. The hole of this structure is formed through a drill process, and in forming a hole of a small diameter, problems such as a drill breakage or a gas distribution plate are damaged. In particular, since the gas dispersion plate is also manufactured in a large area as the substrate to be processed becomes large, a problem arises in that the number of holes to be formed is increased to increase the manufacturing time and increase the manufacturing cost.

Accordingly, the present invention has been made in view of such a problem, and the present invention provides a gas dispersion plate which can facilitate the manufacture, shorten the manufacturing time and reduce the manufacturing cost.

The present invention also provides a process chamber having the gas dispersion plate described above.

Gas dispersion plate according to an aspect of the present invention includes a gas inlet hole, through holes and gas injection hole. The gas inlet hole is formed at a side of the first surface on which gas is introduced. The through holes extend in the direction of the second surface in which gas is injected from the gas inlet holes, and at least two through holes are connected to each of the gas inlet holes. The gas injection hole extends from the through holes to the second surface and has a size larger than that of the through holes.

The gas inlet hole may be formed in a substantially circular or rectangular shape when viewed in plan. In contrast, the gas inlet hole may be formed in a band shape surrounding the center of the gas distribution plate when viewed in plan view.

The gas inlet hole may be formed such that at least one of a plane area and a depth is different according to a position. For example, the gas inlet hole may be formed to increase in planar area from the center portion of the gas distribution plate to the edge portion. As another example, the gas inlet hole may be formed to increase in depth from the center portion of the gas distribution plate to the edge portion.

The gas injection hole may have a region adjacent to the second surface perpendicular to the second surface. In contrast, the gas injection hole may be formed to be inclined such that an area adjacent to the second surface becomes wider toward the second surface direction.

One gas injection hole may be connected to one through hole. Alternatively, one gas injection hole may be commonly connected to two or more of the through holes.

According to another aspect of the present invention, a gas dispersion plate includes gas inlet holes formed at a side of a first surface on which gas is introduced, extending in a second surface direction in which gas is injected from each of the gas inlet holes, It includes a through hole formed in a small size and at least one gas injection hole connected to the at least two or more through holes extending to the second surface. The second surface may be formed such that a distance from the first surface closer to the center portion from the edge portion of the gas distribution plate.

According to an aspect of the present invention, a process chamber is installed in a chamber body to support a substrate to be processed, and is installed in the chamber body to face the substrate support part to inject a gas toward the feature substrate. A gas dispersion plate. The gas distribution plate is formed to have a smaller size than gas inlet holes formed on the first surface side through which gas is introduced, gas injection holes formed on the second surface side through which gas is injected, and the gas inlet hole and the gas injection hole. And through holes connecting the gas inlet hole and the gas injection hole to each other. In this case, at least one of the gas inlet hole and the gas injection hole is connected to two or more of the through holes.

According to such a gas dispersion plate and a process chamber having the same, by forming at least one of the gas inlet hole and the gas injection hole formed on both sides of the gas dispersion plate to be connected in common with the two or more through holes, the gas dispersion plate It can shorten manufacturing time and reduce manufacturing cost. In addition, by forming at least one of the plane area and the depth of the gas inlet hole differently according to the position, it is possible to improve the thickness uniformity of the deposited film deposited on the substrate to be processed. Furthermore, the deposition uniformity can be improved by forming the shape of the lower surface of the gas dispersion plate facing the substrate to be closer to the upper surface from the edge portion toward the center portion.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings. The above-described features and effects of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, and thus, those skilled in the art to which the present invention pertains may easily implement the technical idea of the present invention. Could be. The present invention is not limited to the following embodiments and may be implemented in other forms. The embodiments introduced herein are provided to make the disclosure more complete and to fully convey the spirit and features of the present invention to those skilled in the art. In the drawings, the thickness of each device or film (layer) and regions has been exaggerated for clarity of the invention, and each device may have various additional devices not described herein.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings.

1 is a view showing a process chamber according to an embodiment of the present invention.

Referring to FIG. 1, a process chamber 100 according to an embodiment of the present invention is installed in the chamber body 110 and the chamber body 110 to support the substrate 122 to be processed. And a shower head 130 installed in the chamber body 110 to face the substrate support 120 to supply gas toward the substrate 122.

The chamber body 110 may include a lower body portion 112 and an upper body portion 114 coupled to the upper portion of the lower body portion 112 to be opened and closed. By combining the lower body part 112 and the upper body part 114, a space is provided inside the chamber body 110 to perform a process for the substrate to be processed 122. An exhaust port 116 is formed at the bottom of the chamber body 110 to vacuum the internal space of the chamber body 110.

The substrate support part 120 supports the substrate 122 to be processed and is installed in a lower space inside the chamber body 110. A heater (not shown) may be formed in the substrate support part 120 to heat the substrate 122.

The shower head 130 is installed to face the substrate support 120 in the upper space inside the chamber body 110. The shower head 130 is for uniformly injecting the process gas, and includes an electrode plate 132 and a gas distribution plate 134.

The electrode plate 132 is installed to be fixed to the upper body portion 114 of the chamber body 110. The electrode plate 132 is formed of a metal material such as aluminum having electrical conductivity. The high frequency power source (RF power source) for generating plasma is applied to the electrode plate 132. In the center portion of the electrode plate 132, a gas inlet 136 through which a process gas necessary for thin film deposition such as a reaction gas and a source gas is introduced is formed.

The gas distribution plate 134 is installed below the electrode plate 132 by a predetermined distance. The gas distribution plate 134 is formed of a metal material such as aluminum having electrical conductivity. The gas distribution plate 134 is electrically connected to the electrode plate 132, and a high frequency power applied to the electrode plate 132 is also applied to the gas distribution plate 134.

The gas distribution plate 134 is coupled with the electrode plate 132 through, for example, the connecting member 138. The connecting member 138 is formed to surround the outer portions of the gas distribution plate 134 and the electrode plate 132. Accordingly, a gas diffusion space 139 is provided between the electrode plate 132 and the gas distribution plate 134 to diffuse the gas introduced through the gas inlet 136 into all regions of the gas distribution plate 134. . The process gas introduced into the gas diffusion space 139 through the gas inlet 136 is diffused in the gas diffusion space 139 and uniformly sprayed through the gas dispersion plate 134 onto the target substrate 122.

FIG. 2 is a perspective view illustrating the gas dispersion plate illustrated in FIG. 1 in detail, FIG. 3 is a cross-sectional view taken along the line II ′ of FIG. 2, and FIG. 4 is a cross-sectional view showing another embodiment of the gas inlet hole. 5 is a cross-sectional view showing another embodiment of the gas injection hole, Figure 6 is a cross-sectional view showing another embodiment of the gas injection hole.

2 and 3, the gas distribution plate 134 has a gas inlet hole 220 formed at the side of the first surface 210 into which gas is introduced, and a second surface through which gas is injected from the gas inlet hole 220. It includes a through hole 240 extending in the direction (230) and the water injection hole 250 extending from the through hole 240 to the second surface 230. The gas inlet hole 220, the through hole 240, and the gas injection hole 250 are connected to each other to penetrate the gas distribution plate 134 to provide a passage through which gas can flow.

The gas inlet hole 220 is formed on the first surface 210 to which gas is introduced, that is, the surface facing the electrode plate 132. The gas inlet hole 220 is formed to have a uniform density over the entire area of the gas distribution plate 134. The gas inlet hole 220 is formed in a substantially circular shape in plan view. In contrast, the gas inlet hole 220 may be formed in various shapes such as a square or a hexagon when viewed in a plan view. Meanwhile, as shown in FIG. 4, the gas inlet hole 220 may be formed in a band shape surrounding the center of the gas distribution plate 132.

The through hole 240 is formed to extend in the direction of the second surface 230 from the bottom of the gas inlet hole 220. In this case, at least two through holes 240 are connected to one gas inlet hole 220. The through hole 240 may be formed to have a uniform density over the entire area of the gas distribution plate 134. The through hole 240 is formed between the gas inlet hole 220 and the gas injection hole 250 and is formed to have a smaller size than the gas inlet hole 220 and the gas injection hole 250 to improve gas injection efficiency. do. Meanwhile, a portion where the gas inflow hole 220 and the through hole 240 meet each other may be formed in a tapered shape to minimize the flow resistance when the gas flows from the gas inflow hole 220 to the through hole 240.

The gas injection hole 250 extends from each through hole 240 to the second surface 230 and is formed to have a larger size than the through hole 240. The gas injection hole 250 is formed at a uniform density over the entire area of the gas distribution plate 134. The gas injection hole 250 is formed in a circular shape when viewed in plan view. In contrast, the gas injection hole 250 may be formed in various shapes such as a square or a hexagon when viewed in a plan view. Meanwhile, a portion where the through hole 240 and the gas injection hole 250 meet may be formed in a data shape to minimize the pressure loss of the gas flow.

In the gas injection hole 250, an area adjacent to the second surface 230 is formed perpendicular to the second surface 230. In contrast, as illustrated in FIG. 5, the gas injection hole 250 may be formed to be inclined such that an area adjacent to the second surface 230 becomes wider toward the second surface 230. In addition, the gas injection hole 250 may include both an area perpendicular to the second surface 230 and an inclined area.

Meanwhile, one gas injection hole 250 is connected to one through hole 240. Unlike this, as illustrated in FIG. 6, one gas injection hole 250 may be commonly connected to two or more through holes 240. The gas injection holes 250 commonly connected to the two or more through holes 240 may have various shapes such as a circle and a quadrangle when viewed in a plan view. In addition, the gas injection hole 250 commonly connected to the two or more through holes 240 may be formed in a band shape surrounding the center of the gas distribution plate 134.

As such, at least one of the gas inflow hole 220 and the gas injection hole 250 formed in each of the first and second surfaces 210 and 230 of the gas distribution plate 134 may include two or more through holes. If it is formed to be largely connected in common with (240), the total number of holes to be processed can be reduced to shorten the manufacturing time, minimizing problems such as drill breakage occurred during the manufacturing can reduce the manufacturing cost, than The gas dispersion plate 134 can be manufactured easily.

7 is a plan view showing a gas distribution plate according to another embodiment of the present invention, Figure 8 is a cross-sectional view showing a gas distribution plate according to another embodiment of the present invention.

7 and 8, in order to improve the uniformity of the thickness of the deposited film deposited on the substrate, the gas inlet hole 220 formed on the side of the first surface 210 of the gas dispersion plate 134 may be planar and At least one of the depths may be formed to vary with location.

For example, as illustrated in FIG. 7, the gas inlet hole 220 may be formed to have a larger planar area from the center portion of the gas distribution plate 134 toward the edge portion. In addition, as shown in FIG. 8, the gas inlet hole 220 may be formed to have a greater depth from the center portion of the gas distribution plate 134 toward the edge portion. Typically, depending on the structural characteristics or process conditions of the process chamber, the thickness of the deposited film may be formed to be thick at the center portion and thin at the edge portion. In this case, as shown in Figure 7 or 8, the shape of the gas inlet hole 220 from the center portion to the edge portion is formed so that the planar area becomes larger or deeper to reduce the gas flow resistance, thereby, in the center portion and the edge portion The deposition thickness uniformity of the can be improved. On the other hand, when the thickness of the deposited film is formed in a thin form at the center portion and thick at the edge portion according to the structural characteristics or process conditions of the process chamber, the planar area of the gas inlet hole 220 from the center portion to the edge portion becomes smaller or smaller in depth. It can be formed so as to improve the uniformity of the deposition thickness.

9 is a cross-sectional view showing a gas distribution plate according to another embodiment of the present invention.

Referring to FIG. 9, the gas distribution plate 134 may include a gas inlet hole 220 formed at a side of the first surface 210 on which gas is introduced, and a second surface in which gas is injected from each of the gas inlet holes 220. Extends in the direction 230 and is connected in common with at least two or more through holes 240 and through holes 240 formed in a smaller size than the gas inlet hole 220 to extend to the second surface 230. At least one gas injection hole 250 is included.

The gas injection holes 250 commonly connected to the two or more through holes 240 may have various shapes such as a circle and a quadrangle when viewed in a plan view. In addition, the gas injection hole 250 commonly connected to the two or more through holes 240 may be formed in a band shape surrounding the center of the gas distribution plate 134.

10 is a cross-sectional view showing a gas distribution plate according to another embodiment of the present invention.

Referring to FIG. 10, the second surface 230 of the gas distribution plate 134 is formed such that the distance from the edge portion of the gas distribution plate 134 toward the center becomes closer to the first surface 210. As the size of the liquid crystal display device and the solar cell increases, the size of the process chamber for manufacturing the same increases, and accordingly, the size of the gas distribution plate 134 also increases. As the gas distribution plate 134 becomes larger, sagging of the gas distribution plate 134 may occur, which may reduce the deposition uniformity by changing the distance between the gas distribution plate 134 and the substrate to be processed. Accordingly, in consideration of the deflection of the gas dispersion plate 134, the shape of the second surface 230 of the gas dispersion plate 134 facing the substrate to be processed is increased from the edge portion to the center portion as described above. By forming a close distance to the, it is possible to maintain a uniform distance between the gas distribution plate 134 and the substrate to be processed during the process, thereby improving the uniformity of the deposition.

As described above, at least one of the gas inflow hole 220 and the gas injection hole 250 is formed to be largely connected in common with the two or more through holes 240, thereby shortening the manufacturing time of the gas dispersion plate 134. And reduce manufacturing costs. In addition, by forming at least one of the planar area and the depth of the gas inlet hole 220 according to the position, it is possible to improve the thickness uniformity of the deposited film deposited on the substrate to be processed. Furthermore, the deposition uniformity can be improved by forming the shape of the second surface 230 of the gas dispersion plate 134 facing the substrate to be closer to the first surface 210 from the edge portion toward the center portion. .

In the detailed description of the present invention described above with reference to the preferred embodiments of the present invention, those skilled in the art or those skilled in the art having ordinary skill in the art will be described in the claims to be described later It will be understood that various modifications and variations can be made in the present invention without departing from the scope of the present invention.

1 is a view showing a process chamber according to an embodiment of the present invention.

FIG. 2 is a perspective view showing in detail the gas distribution plate shown in FIG. 1.

3 is a cross-sectional view taken along the line II ′ of FIG. 2.

4 is a cross-sectional view showing another embodiment of a gas inlet hole.

5 is a cross-sectional view showing another embodiment of a gas injection hole.

6 is a cross-sectional view showing another embodiment of a gas injection hole.

7 is a plan view showing a gas distribution plate according to another embodiment of the present invention.

8 is a cross-sectional view showing a gas distribution plate according to another embodiment of the present invention.

9 is a cross-sectional view showing a gas distribution plate according to another embodiment of the present invention.

10 is a cross-sectional view showing a gas distribution plate according to another embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

100: process chamber 110: chamber body

120: substrate support 130: shower head

132: electrode plate 134: gas dispersion plate

220: gas inlet hole 240: through hole

250: gas injection hole

Claims (13)

  1. At least one gas inlet hole formed at a side of the first surface on which gas is introduced;
    Through-holes extending from the gas inlet hole in a direction in which the gas is injected, and at least two connected to each of the gas inlet holes; And
    At least one gas injection hole extending from the through holes to the second surface and having a larger size than the through hole;
    The gas inlet hole is a gas distribution plate, characterized in that formed at least one of the planar and the depth is different depending on the position.
  2. The method of claim 1,
    The gas inlet hole is a gas distribution plate, characterized in that formed in a circular or square shape when viewed in plan.
  3. The method of claim 1,
    The gas inlet hole is formed in a band shape surrounding the center of the gas distribution plate when viewed in plan view.
  4. delete
  5. The method of claim 1,
    The gas inlet hole is formed so that the planar area becomes larger toward the edge portion from the center portion of the gas distribution plate.
  6. The method of claim 1,
    The gas inlet hole is formed so that the depth increases toward the edge portion from the center portion of the gas distribution plate.
  7. The method of claim 1,
    The gas injection hole is a gas distribution plate, characterized in that the region adjacent to the second surface is formed perpendicular to the second surface.
  8. The method of claim 1,
    And the gas injection hole is formed to be inclined such that an area adjacent to the second surface becomes wider toward the second surface direction.
  9. The method of claim 1,
    The gas distribution plate, characterized in that the one gas injection hole is connected to one through hole.
  10. The method of claim 1,
    A gas distribution plate, characterized in that one of the gas injection hole is commonly connected to two or more of the through holes.
  11. delete
  12. delete
  13. A substrate support part installed inside the chamber body to support a substrate to be processed; And
    A gas distribution plate installed in the chamber body so as to face the substrate support and spraying gas toward the substrate support;
    The gas dispersion plate,
    Gas inlet holes formed at a side of the first surface on which gas is introduced;
    Gas injection holes formed at a side of the second surface on which gas is injected, and
    It is formed to have a smaller size than the gas inlet hole and the gas injection hole comprises a through hole for connecting the gas inlet hole and the gas injection hole,
    At least one of the gas inlet hole and the gas injection hole is connected to two or more of the through holes,
    The gas inlet hole is formed so that at least one of the plane and the depth is different depending on the position.
KR1020090115350A 2009-11-26 2009-11-26 Gas distribution plate and process chamber having the same KR101118477B1 (en)

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KR1020090115350A KR101118477B1 (en) 2009-11-26 2009-11-26 Gas distribution plate and process chamber having the same
CN 201010123136 CN102080218B (en) 2009-11-26 2010-03-12 Gas distribution plate and treatment chamber equipped therewith

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KR101118477B1 true KR101118477B1 (en) 2012-03-12

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Publication number Priority date Publication date Assignee Title
TWI480417B (en) * 2012-11-02 2015-04-11 Ind Tech Res Inst Air showr device having air curtain and apparatus for depositing film using the same
KR101347046B1 (en) * 2013-02-04 2014-01-06 주식회사 테스 Thin film deposition apparatus
TWM478028U (en) * 2013-07-29 2014-05-11 Applied Materials Inc Diffuser for a deposition chamber
CN104810238A (en) * 2014-01-23 2015-07-29 北京北方微电子基地设备工艺研究中心有限责任公司 Gas homogenizing structure and plasma system

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KR19990067742A (en) * 1998-01-05 1999-08-25 엔도 마코토 Plasma cvd device
KR20020001565A (en) * 2000-06-23 2002-01-09 니시히라 순지 Cvd apparatus
KR200419389Y1 (en) 2005-04-07 2006-06-19 어플라이드 머티어리얼스, 인코포레이티드 Gas distribution uniformity improvement by baffle plate with multi-size holes for large size pecvd systems
KR20080068572A (en) * 2007-01-19 2008-07-23 도쿄엘렉트론가부시키가이샤 Plasma processing apparatus

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JP2003324072A (en) * 2002-05-07 2003-11-14 Nec Electronics Corp Semiconductor manufacturing equipment
US8069817B2 (en) * 2007-03-30 2011-12-06 Lam Research Corporation Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
KR100949914B1 (en) * 2007-11-28 2010-03-30 주식회사 케이씨텍 Atomic layer deposition apparatus
CN100568453C (en) * 2008-08-22 2009-12-09 北京北方微电子基地设备工艺研究中心有限责任公司 Plasma processing apparatus, gas dispensing device and gas delivery method

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Publication number Priority date Publication date Assignee Title
KR19990067742A (en) * 1998-01-05 1999-08-25 엔도 마코토 Plasma cvd device
KR20020001565A (en) * 2000-06-23 2002-01-09 니시히라 순지 Cvd apparatus
KR200419389Y1 (en) 2005-04-07 2006-06-19 어플라이드 머티어리얼스, 인코포레이티드 Gas distribution uniformity improvement by baffle plate with multi-size holes for large size pecvd systems
KR20080068572A (en) * 2007-01-19 2008-07-23 도쿄엘렉트론가부시키가이샤 Plasma processing apparatus

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CN102080218A (en) 2011-06-01
CN102080218B (en) 2014-01-22

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