CN109817554B - Gas diffuser - Google Patents

Gas diffuser Download PDF

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Publication number
CN109817554B
CN109817554B CN201910095476.0A CN201910095476A CN109817554B CN 109817554 B CN109817554 B CN 109817554B CN 201910095476 A CN201910095476 A CN 201910095476A CN 109817554 B CN109817554 B CN 109817554B
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deposition
hole
area
deposition hole
gas diffuser
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CN109817554A (en
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夏存军
张兴永
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Abstract

The present invention provides a gas diffuser comprising: the first deposition area corresponds to the position of the first leveling area; the second deposition area corresponds to the second leveling area in position; the first deposition area and the second deposition area are both provided with a plurality of second deposition holes; a third deposition area corresponding to the position of the bending area; the third deposition area is provided with a first hole column and a second hole column which are arranged in a staggered mode, and the first hole column comprises a plurality of third deposition holes; the second aperture column comprises a plurality of fourth deposition apertures; the area of the third deposition hole is larger than that of the fourth deposition hole, and the area of the third deposition hole is not smaller than that of the second deposition hole. The gas diffuser can avoid the problems of cracks and film layer fracture when the display panel is folded, and prolong the service life of the display panel.

Description

Gas diffuser
[ technical field ] A method for producing a semiconductor device
The invention relates to the technical field of display, in particular to a gas diffuser.
[ background of the invention ]
Compared with a liquid crystal display, an Active Matrix Organic Light Emitting Diode (AMOLED) has advantages of high contrast, large viewing angle, fast response speed, etc., thereby drawing attention and development.
With the expansion of the application field of the OLED (Organic Light-Emitting Diode), more and more application fields need flexible display of the OLED, that is, the OLED is bent and then displayed.
When the number of times of bending the OLED is increased, the problems of cracks, film layer fracture, packaging failure and the like are easy to occur in the conventional gas diffuser manufacturing OLED display panel, and the main reason is that the inorganic film layer in the film packaging is too large in deformation when the OLED is folded outwards, and cracks, film layer fracture and the like are easy to occur under the action of brittleness and stress of the inorganic film layer, so that the service life of the OLED display panel is shortened.
Therefore, there is a need to provide a gas diffuser to solve the problems of the prior art.
[ summary of the invention ]
The invention aims to provide a gas diffuser which can prolong the service life of a display panel.
In order to solve the above technical problem, the present invention provides a gas diffuser for manufacturing an organic layer of an encapsulation film in a display panel, wherein the display panel includes a first flat region, a bent region and a second flat region, the bent region is located between the first flat region and the second flat region, an encapsulation layer of the bent region has a buffer structure, and the gas diffuser includes:
the first deposition area corresponds to the position of the first leveling area;
the second deposition area corresponds to the second leveling area in position; the first deposition area and the second deposition area are both provided with a plurality of second deposition holes;
a third deposition area corresponding to the position of the bending area; the third deposition area is provided with a first hole column and a second hole column which are arranged in a staggered mode, and the first hole column comprises a plurality of third deposition holes; the second aperture column comprises a plurality of fourth deposition apertures; the area of the third deposition hole is larger than that of the fourth deposition hole, and the area of the third deposition hole is not smaller than that of the second deposition hole.
The gas diffuser comprises a third deposition area corresponding to the position of the bending area; the third deposition area is provided with a first hole column and a second hole column which are arranged in a staggered mode, and the first hole column comprises a plurality of third deposition holes; the second aperture column comprises a plurality of fourth deposition apertures; the area of the third deposition hole is larger than that of the fourth deposition hole, and the area of the third deposition hole is not smaller than that of the second deposition hole; the third deposition area is provided with the deposition hole rows with different areas, so that a buffer structure is formed when the organic layer is manufactured, the problems of cracks, film breakage and the like caused by the fact that the stress and other parameters of the inorganic film cannot be released when the organic layer is folded are solved, and the service life of the display panel is prolonged.
[ description of the drawings ]
FIG. 1 is a top view of a display panel;
FIG. 2 is a first top view of a gas diffuser according to a first embodiment of the present invention;
FIG. 3 is a second top view of a gas diffuser according to a first embodiment of the present invention;
FIG. 4 is a schematic view of a display panel corresponding to a gas diffuser according to a first embodiment of the present invention;
FIG. 5 is a schematic view of a first structure of the bending region in FIG. 4;
FIG. 6 is a second structural view of the bending region of FIG. 4;
FIG. 7 is a first top view of a gas diffuser according to a second embodiment of the present invention;
FIG. 8 is a second top view of a gas diffuser according to a second embodiment of the present invention;
FIG. 9 is a schematic view of a display panel corresponding to a gas diffuser in accordance with a second embodiment of the present invention;
FIG. 10 is a schematic view of a first configuration of the bending region of FIG. 8;
fig. 11 is a second structural diagram of the bending region in fig. 8.
[ detailed description ] embodiments
The following description of the embodiments refers to the accompanying drawings for illustrating the specific embodiments in which the invention may be practiced. In the present invention, directional terms such as "up", "down", "front", "back", "left", "right", "inner", "outer", "side", etc. refer to directions of the attached drawings. Accordingly, the directional terms used are used for explanation and understanding of the present invention, and are not used for limiting the present invention. In the drawings, elements having similar structures are denoted by the same reference numerals.
Referring to fig. 1 to 6, fig. 1 is a top view of a display panel.
As shown in fig. 1, in a top view, the display panel includes a first flat region 101, a bent region 103, and a second flat region 102, wherein the bent region 103 is located between the first flat region 101 and the second flat region 102. When the display panel is in a bending state, one end of the display panel is connected with the driving chip through the flexible connector.
As shown in fig. 2, the gas diffuser 200 of the present embodiment is used for fabricating an organic layer of an encapsulation film in a display panel, and the gas diffuser 200 includes a first deposition area 201, a second deposition area 202, and a third deposition area 203.
The first deposition area 201 corresponds to the position of the first leveling area 101.
The second deposition area 202 corresponds in position to said second leveling area 102; the first deposition region 201 and the second deposition region 202 are each provided with a plurality of second deposition holes 22.
The third deposition area 203 corresponds to the position of the bending area 103; the third deposition area 203 is provided with a first hole column and a second hole column which are arranged in a staggered manner, the first hole column comprises a plurality of third deposition holes 23, namely the third deposition holes 23 in the first hole column are positioned in the same column; the second aperture column comprises a plurality of fourth deposition apertures 24; that is, the fourth deposition holes 24 in the second hole row are located in the same row, the area of the third deposition hole 23 is larger than that of the fourth deposition hole 24, and the area of the third deposition hole 23 is larger than that of the second deposition hole 22.
In one embodiment, the second deposition hole 22, the third deposition hole 23 and the fourth deposition hole 24 are all circular in shape, the third deposition hole 23 has a diameter larger than that of the fourth deposition hole 24, and the third deposition hole 23 has a diameter larger than that of the second deposition hole 22.
In another embodiment, as shown in fig. 3, the second deposition hole 22 and the third deposition hole 23 are both circular in shape, the fourth deposition hole 24 is elliptical in shape, the length of the major axis of the fourth deposition hole 24 is less than or equal to the diameter of the third deposition hole 23, the length of the minor axis of the fourth deposition hole 24 is less than the diameter of the third deposition hole 23, and the diameter of the third deposition hole 23 is greater than the diameter of the second deposition hole 22.
The gas diffuser 200 may further include: a peripheral region (not shown) surrounding the gas diffuser 200 and located at the outermost side of the gas diffuser 200, wherein the first deposition region 201, the second deposition region 202 and the third deposition region 203 are located within the peripheral region. That is, the peripheral region is located outside the first deposition region 201, the second deposition region 202 and the third deposition region 203, and is a region surrounded by the first deposition holes 21 in the periphery in fig. 2 or 3. The peripheral area is provided with a plurality of first deposition apertures 21.
In order to further improve the encapsulation effect, that is, facilitate the formation of protrusions on the organic layer at the periphery of the display panel, such as the formation of protrusions on the organic layer in the first flat region 101 and the second flat region 102 in fig. 4, the area of the second deposition hole 22 is smaller than that of the first deposition hole 21; the area of the third deposition hole 23 is less than or equal to the area of the first deposition hole 21. In an embodiment, when the first deposition hole 21 is also circular in shape, the diameter of the third deposition hole 23 is smaller than or equal to the diameter of the first deposition hole 21. It is understood that the diameter of the first deposition hole 21 is greater than the diameter of the second deposition hole 22 at this time.
Wherein, in order to further improve the packaging effect, the diameter of the third deposition hole 23 is smaller than or equal to the diameter of the first deposition hole 21.
Wherein, in order to further improve the packaging effect, the distance between two adjacent third deposition holes 23 and fourth deposition holes 24 is equal.
Of course, it is understood that the shapes of the first deposition hole 21, the second deposition hole 22, the third deposition hole 23, and the fourth deposition hole 24 are not limited to the above shapes, and may have other shapes.
As shown in fig. 4, the cross-sectional structure of the display panel includes a flexible substrate 11, an anode 12, and a pixel defining layer 13, an organic light emitting layer 14, and a cathode 15, and further includes an encapsulation film, which may include a first organic layer 16, a first inorganic layer 17, and a second organic layer 18. That is, the display panel is an organic light emitting diode display panel.
As shown in fig. 4 to 6, the first organic layer 16 is formed on the display panel by the gas diffuser 200 of the present embodiment, such that the first organic layer 16 corresponding to the bending region 103 has concave-convex undulations, wherein the convex structures 161 are formed at positions corresponding to the third deposition holes 23, and the concave portions are formed at positions corresponding to the fourth deposition holes 24, wherein the monomer of the first organic layer 16 includes at least one of parylene C, parylene N, parylene D, and parylene HT.
Depositing a first inorganic layer 17 on the first organic layer 16 by using PECVD, ALD, PVD, or other film forming processes, wherein the first inorganic layer 17 is made of SINx or Al2O3、SiO2And the like.
Then, the second organic layer 18 is formed on the display panel by the gas diffuser 200 of the present embodiment, such that the first organic layer 18 corresponding to the bending region 103 has concave-convex undulations, wherein the convex structure 181 is formed at a position corresponding to the third deposition hole 23, and the concave structure is formed at a position corresponding to the fourth deposition hole 24, wherein the monomer of the second organic layer 18 includes at least one of parylene C, parylene N, parylene D, and parylene HT.
With reference to fig. 6, when the display panel is bent in a first preset manner (inward), the area of the third deposition hole is larger than that of the second deposition hole, and the area of the fourth deposition hole is smaller than that of the third deposition hole, so that the organic layer forms a concave-convex structure (i.e., a buffer structure), thereby playing a role in buffering during bending, avoiding the problems of cracking, film layer breaking and the like, and prolonging the service life of the display panel.
When the display panel is bent according to the first preset mode, because the flexibility of the inorganic film layer is poor, the inorganic layer on the inorganic layer is elongated through the long and low wavy organic layer in the bending area, so that the stress is effectively released, the problems of cracks, film layer fracture and the like of the inorganic film layer under the action of external stress are avoided, the influence of bending on the inorganic film layer is reduced, the service life of the display panel is prolonged, and the bending effect and the performance of the display panel are improved.
Referring to fig. 7, fig. 7 is a schematic structural diagram of a gas diffuser according to a second embodiment of the present invention.
The gas diffuser of the present embodiment is different from the previous embodiment in that the area of the third deposition hole 23 is equal to the area of the second deposition hole 22.
In one embodiment, the second deposition hole 22, the third deposition hole 23 and the fourth deposition hole 24 are all circular in shape, the third deposition hole 23 has a diameter greater than that of the fourth deposition hole 24, and the third deposition hole 23 has a diameter equal to that of the second deposition hole 22.
In another embodiment, as shown in fig. 8, the first deposition hole 21, the second deposition hole 22, and the third deposition hole 23 are all circular in shape, the fourth deposition hole 24 is oval in shape, the third deposition hole 23 has a diameter equal to the diameter of the second deposition hole 22, the fourth deposition hole 24 has a major axis having a length less than or equal to the diameter of the third deposition hole 23, and the fourth deposition hole 24 has a minor axis having a length less than the diameter of the third deposition hole 23.
In order to further improve the encapsulation effect, that is, to facilitate the formation of the protrusion of the organic layer located at the periphery of the display panel, the area of the third deposition hole 23 is smaller than the area of the first deposition hole 21. In one embodiment, the diameter of the third deposition hole 23 is smaller than the diameter of the first deposition hole 21.
As shown in fig. 9 to 11, the first organic layer 16 is fabricated on the display panel by the gas diffuser 200 of the present embodiment such that the first organic layer 16 corresponding to the bending region 103 is rugged, wherein the recess structure 162 is formed at a position corresponding to the fourth deposition hole 24.
The second organic layer 18 is fabricated on the display panel by the gas diffuser 200 of the present embodiment such that the first organic layer 18 corresponding to the bending region 103 is rugged, wherein the recess structure 182 is formed at a position corresponding to the fourth deposition hole 24.
With reference to fig. 11, when the display panel is bent in a second preset manner (outward), since the area of the third deposition hole is equal to the area of the second deposition hole and the area of the fourth deposition hole is smaller than the area of the third deposition hole, the organic layer forms a concave-convex structure (buffer structure), so that the organic layer plays a role in buffering during bending, the problems of cracks, film layer fracture and the like are avoided, and the service life of the display panel is prolonged.
When the display panel is bent according to the second preset mode, because the flexibility of the inorganic film layer is poor, the inorganic layer on the inorganic layer is elongated through the long and low wavy organic layer in the bending area, so that the stress is effectively released, the problems of cracks, film layer fracture and the like of the inorganic film layer under the action of external stress are avoided, the influence of bending on the inorganic film layer is reduced, the service life of the display panel is prolonged, and the bending effect and the performance of the display panel are improved.
The gas diffuser comprises a third deposition area corresponding to the position of the bending area; the third deposition area is provided with a first hole column and a second hole column which are arranged in a staggered mode, and the first hole column comprises a plurality of third deposition holes; the second aperture column comprises a plurality of fourth deposition apertures; the area of the third deposition hole is larger than that of the fourth deposition hole, and the area of the third deposition hole is not smaller than that of the second deposition hole; because the deposition hole rows with different areas are arranged in the third deposition area, a buffer structure is formed when the organic layer is manufactured, the problems that cracks, film breakage and the like occur due to the fact that the stress and other parameters of the inorganic film cannot be released when the organic layer is folded are solved, and the service life of the display panel is prolonged.
In summary, although the present invention has been described with reference to the preferred embodiments, the above-described preferred embodiments are not intended to limit the present invention, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, therefore, the scope of the present invention shall be determined by the appended claims.

Claims (10)

1. A gas diffuser for fabricating an organic layer of an encapsulation film in a display panel, wherein the display panel includes a first flat region, a bent region and a second flat region, the bent region is between the first flat region and the second flat region, the encapsulation layer of the bent region has a buffer structure, the gas diffuser comprising:
the first deposition area corresponds to the position of the first leveling area;
the second deposition area corresponds to the second leveling area in position;
a third deposition area corresponding to the position of the bending area; the first deposition area and the second deposition area are both provided with a plurality of second deposition holes; the third deposition area is provided with a first hole column and a second hole column which are arranged in a staggered mode, and the first hole column comprises a plurality of third deposition holes; the second aperture column comprises a plurality of fourth deposition apertures; the area of the third deposition hole is larger than that of the fourth deposition hole, and the area of the third deposition hole is not smaller than that of the second deposition hole.
2. The gas diffuser of claim 1,
when the display panel is bent inward, the area of the third deposition hole is larger than that of the second deposition hole.
3. The gas diffuser of claim 2, wherein the second, third and fourth deposition holes are all circular in shape, the third deposition hole having a diameter greater than the fourth deposition hole, the third deposition hole having a diameter greater than the second deposition hole.
4. The gas diffuser of claim 2, wherein the second deposition hole and the third deposition hole are both circular in shape, the fourth deposition hole is elliptical in shape, the length of the major axis of the fourth deposition hole is less than or equal to the diameter of the third deposition hole, the length of the minor axis of the fourth deposition hole is less than the diameter of the third deposition hole, and the diameter of the third deposition hole is greater than the diameter of the second deposition hole.
5. The gas diffuser of claim 2, further comprising: a peripheral region;
the peripheral area is positioned outside the first deposition area, the second deposition area and the third deposition area, and is provided with a plurality of first deposition holes; the area of the third deposition hole is smaller than or equal to the area of the first deposition hole.
6. The gas diffuser of claim 1,
when the display panel is bent outward, the area of the third deposition hole is equal to the area of the second deposition hole.
7. The gas diffuser of claim 6, wherein the second, third and fourth deposition holes are all circular in shape, the third deposition hole having a diameter greater than the fourth deposition hole, the third deposition hole having a diameter equal to the second deposition hole.
8. The gas diffuser of claim 6, wherein the second deposition hole and the third deposition hole are both circular in shape, the fourth deposition hole is elliptical in shape, the third deposition hole has a diameter equal to the diameter of the second deposition hole, the fourth deposition hole has a major axis with a length less than or equal to the diameter of the third deposition hole, and the fourth deposition hole has a minor axis with a length less than the diameter of the third deposition hole.
9. The gas diffuser of claim 6, further comprising: a peripheral region;
the peripheral area is positioned outside the first deposition area, the second deposition area and the third deposition area, and is provided with a plurality of first deposition holes; the area of the third deposition hole is smaller than that of the first deposition hole.
10. The gas diffuser of claim 1,
the distance between every two adjacent third deposition holes and every two adjacent fourth deposition holes is equal.
CN201910095476.0A 2019-01-31 2019-01-31 Gas diffuser Active CN109817554B (en)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1696768A (en) * 2004-05-12 2005-11-16 应用材料股份有限公司 Plasma uniformity control by gas diffuser hole design
CN101018886A (en) * 2004-07-12 2007-08-15 应用材料股份有限公司 Plasma uniformity control by gas diffuser curvature
CN101308771A (en) * 2007-03-21 2008-11-19 应用材料公司 Gas flow diffuser
JP2013038196A (en) * 2011-08-08 2013-02-21 Sharp Corp Vapor phase growth apparatus
CN203820883U (en) * 2013-07-29 2014-09-10 应用材料公司 Diffuser for deposition chamber
KR20160127294A (en) * 2015-04-24 2016-11-03 주식회사 원익아이피에스 Substrate processing apparatus
CN109075024A (en) * 2016-04-15 2018-12-21 应用材料公司 Micro-volume deposition chambers

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI283899B (en) * 2002-07-09 2007-07-11 Applied Materials Inc Capacitively coupled plasma reactor with magnetic plasma control
JP2010255081A (en) * 2009-04-28 2010-11-11 Canon Anelva Corp Substrate treatment apparatus, cvd apparatus, and method for manufacturing electron device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1696768A (en) * 2004-05-12 2005-11-16 应用材料股份有限公司 Plasma uniformity control by gas diffuser hole design
CN101018886A (en) * 2004-07-12 2007-08-15 应用材料股份有限公司 Plasma uniformity control by gas diffuser curvature
CN101308771A (en) * 2007-03-21 2008-11-19 应用材料公司 Gas flow diffuser
JP2013038196A (en) * 2011-08-08 2013-02-21 Sharp Corp Vapor phase growth apparatus
CN203820883U (en) * 2013-07-29 2014-09-10 应用材料公司 Diffuser for deposition chamber
KR20160127294A (en) * 2015-04-24 2016-11-03 주식회사 원익아이피에스 Substrate processing apparatus
CN109075024A (en) * 2016-04-15 2018-12-21 应用材料公司 Micro-volume deposition chambers

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