KR20160127294A - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

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Publication number
KR20160127294A
KR20160127294A KR1020150058313A KR20150058313A KR20160127294A KR 20160127294 A KR20160127294 A KR 20160127294A KR 1020150058313 A KR1020150058313 A KR 1020150058313A KR 20150058313 A KR20150058313 A KR 20150058313A KR 20160127294 A KR20160127294 A KR 20160127294A
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KR
South Korea
Prior art keywords
flow path
path forming
gas
top plate
plate
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KR1020150058313A
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Korean (ko)
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KR102046084B1 (en
Inventor
박해윤
황석훈
엄용택
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주식회사 원익아이피에스
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Priority to KR1020150058313A priority Critical patent/KR102046084B1/en
Publication of KR20160127294A publication Critical patent/KR20160127294A/en
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Publication of KR102046084B1 publication Critical patent/KR102046084B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The present invention relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus performing substrate processing such as etching or vapor deposition with respect to a substrate. The substrate processing apparatus according to the present invention comprises: a chamber body having an upper side with an opening; a substrate support part installed on the chamber body to support a substrate; a top plate installed in the opening of the chamber body and forming a closed processing space; a diffusion plate installed on a lower side of the top plate and diffusing process gas; an injection plate installed on a lower side of the diffusion plate, and injecting the process gas diffused by the diffusion plate into the processing space; and a gas flow forming part installed between the top plate and the diffusion plate, inducing gas supplied from a central portion of the top plate to an edge of the diffusion plate, and injecting gas between the diffusion plate and the injection plate.

Description

[0001] Substrate processing apparatus [

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus that performs substrate processing such as etching and deposition on a substrate.

The substrate processing apparatus refers to an apparatus that performs substrate processing such as etching, vapor deposition, and the like on a substrate.

The substrate processing apparatus may be configured in various ways according to the substrate processing process. For example, the substrate processing apparatus may include a process chamber for forming an enclosed process space, a shower disposed above the process chamber for supplying a gas for processing the substrate into the process space, A head portion, and a substrate supporting portion provided in the process chamber and supporting the substrate to be processed.

The substrate processing apparatus having the above-described structure performs the substrate processing process by forming a plasma in the processing space by the electromagnetic field together with the supply of the gas.

The substrate processing apparatus is subjected to a cleaning process for removing particles after a predetermined number of substrate processing steps.

Here, the cleaning process can be performed by various methods. For example, a cleaning process for the inside of the showerhead and the process chamber can be performed by supplying the cleaning gas to the showerhead in a dissociated state using a remote plasma have.

However, when the cleaning gas is supplied to the shower head in a state in which the cleaning gas is dissipated by using the remote plasma as described above, cleaning of the inside of the showerhead can not be performed smoothly according to the supply structure.

SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate processing apparatus capable of maximizing process efficiency by minimizing a rectangular area of gas supply during gas supply so as to uniformly supply gas.

The present invention has been made in order to achieve the above-mentioned object of the present invention. A chamber body having a closed processing space provided on an opening of the chamber body and having an open side; A substrate support disposed in the chamber body and supporting the substrate; A top plate installed in the opening of the chamber body to form a closed processing space; A diffusion plate disposed under the top plate to diffuse the process gas; An injection plate installed below the diffusion plate to inject process gas diffused by the diffusion plate into the process space; And a gas flow path forming unit installed between the top plate and the diffusion plate for introducing a gas supplied from a central portion of the top plate to an edge of the diffusion plate and injecting gas between the diffusion plate and the injection plate A substrate processing apparatus, and a substrate processing apparatus.

The gas flow path forming part includes a central flow path forming part coupled to a bottom surface of the top plate and supplied with a gas at a central portion of the top plate and a central flow path forming part coupled to a bottom surface of the top plate, And a second communication hole formed in the diffusion plate so as to inject gas into the gap between the diffusion plate and the injection plate, And a plurality of first gas connector tubes connected to the first gas connector tubes.

Wherein the central flow path forming portion is connected to a through hole formed through the top plate and is coupled to a bottom surface of the top plate and configured to transfer the gas supplied through the through holes to each of the plurality of branch flow path forming portions, And a plurality of flow path connection parts formed corresponding to the flow path forming parts, wherein the branch flow path forming part is coupled to each of the plurality of flow path connection parts and is coupled to the bottom surface of the top plate, And may include a flow path forming member having a U-shaped cross section.

The central passage forming part is coupled to the bottom surface of the top plate to cover the central passage forming recess formed concavely in the bottom surface of the top plate corresponding to the through hole formed through the top plate, And the central flow passage forming groove has a plurality of flow passage connecting portions corresponding to each of the plurality of branch passage forming portions, A plurality of branch ducts formed on the bottom surface of the top plate and each having a vertical U-shaped cross section in the longitudinal direction, Member.

The plurality of first gas connection pipes may be provided so that the moving distance of gas from the through holes to each of the first communication holes is the same.

The plurality of branch flow path forming parts are coupled to at least two or more sub branch flow path forming parts so as to be branched into two or more sub branch flow paths at the end, .

Wherein the diffusion plate has a plurality of second communication holes corresponding to the central flow path forming portion and the gas flow path forming portion injects gas through the second communication hole formed in the diffusion plate between the diffusion plate and the injection plate And a plurality of second gas connection pipes connecting the central passage forming part and the second communication hole.

The top plate may have a rectangular planar shape, and the plurality of branch flow channel forming parts may be provided in eight corresponding to the vertexes and the center of the sides along the edge of the rectangular shape.

A substrate processing apparatus according to the present invention is a substrate processing apparatus comprising a shower head in which a top plate, a diffusion plate and a diffusion plate are sequentially arranged, a gas flow path for introducing gas from the shower plate to the edge of the diffusion plate, By further including the forming portion, the gas can be smoothly injected to the edge of the ejection plate, particularly, the ejection plate, so that even gas can be injected to effectively perform the substrate processing.

Particularly, the substrate processing apparatus according to the present invention is a substrate processing apparatus that includes a top plate, a diffusion plate, and a diffusion plate, a gas for guiding gas from the shower head sequentially disposed to the edge of the diffusion plate between the top plate and the diffusion plate, By further including the flow path forming portion, the gas can be guided to the edge of the diffusion plate, uniform gas supply up to the edge portion which is vulnerable to uniformity is possible, and substrate processing can be uniformly performed.

Further, the substrate processing apparatus according to the present invention is advantageous in that the cleaning gas dissociated by the remote plasma is sprayed smoothly to the edge of the spray plate in the dissociated state, thereby effectively cleaning the diffuser plate and cleaning the chamber body have.

In the substrate processing apparatus according to the present invention, the cleansing gas dissociated by the remote plasma is sprayed smoothly to the edge of the spray plate in a dissociated state to effectively perform cleaning up to the edge of the diffusion plate, The entire process time can be shortened and the process efficiency can be maximized.

1 is a cross-sectional view showing a substrate processing apparatus according to the present invention.
Fig. 2 is a bottom view showing a bottom surface of the top plate in the substrate processing apparatus of Fig. 1; Fig.
3 is a cross-sectional view showing a substrate processing apparatus having a cleaning gas flow path forming portion modified as a substrate processing apparatus according to the present invention.
Fig. 4 is a bottom view showing the bottom surface of the top plate in the substrate processing apparatus of Fig. 3; Fig.

Hereinafter, a substrate processing apparatus according to the present invention will be described with reference to the accompanying drawings. 1 is a sectional view taken along a line I-I in FIG. 2, and FIG. 3 is a sectional view taken along a line IV-IV in FIG.

1 to 4, a substrate processing apparatus according to the present invention includes a chamber body 110 having an opened upper side; A substrate support 130 installed on the chamber body 110 to support the substrate 10; A top plate 120 installed at an opening of the chamber body 110 to form a closed processing space S; A diffusion plate 210 installed below the top plate 120 to diffuse the process gas; An injection plate 220 installed below the diffusion plate 210 to inject the process gas diffused by the diffusion plate into the process space S; The gas supplied from the central portion of the top plate 120 to the edge of the diffusion plate 210 is introduced between the top plate 120 and the diffusion plate 210, And a gas flow path forming part (300) for injecting a gas between the gas flow path forming part (220).

The chamber body 110 may be configured to have a closed processing space S for performing a substrate processing process by coupling the top plate 120 and the like.

Also, the chamber body 110 is formed with one or more gates 111 for introducing and discharging the substrate 10.

Meanwhile, the chamber body 110 is connected to an exhaust system for maintaining and evacuating vacuum pressure in the processing space S, and various types of power sources may be applied for plasma formation.

As an example of the power applying method, a configuration except for the substrate supporting part 130 described later, that is, the chamber body 120, the top plate 120, and the like are grounded, and the substrate supporting part 130 can be powered by one or more RF power .

The substrate support 130 may be provided in the chamber body 110 to support the substrate 10, and may have various configurations.

For example, the substrate support 130 may be fixedly installed in the chamber body 110, or may be installed to move up and down with respect to the chamber body 110.

The substrate support 130 may have various structures such as an electrostatic chuck (not shown) for fixing the substrate 10 by suction during a substrate processing process, a heater for heating the substrate 10, and the like.

The substrate support 130 may be provided with a plurality of lift pins for moving up and down the substrate 10 by lifting and lowering for introduction and discharge of the substrate 10.

The top plate 120 may have a variety of configurations including a processing space S that is installed in an opening of the chamber body 110 and is sealed together with the chamber body 110.

1 and 2, when the rectangular substrate 10 is to be processed, the top plate 120 has a shape corresponding to the shape of the substrate 10, Shape.

The top plate 120 is formed with a through hole 121 through which a gas is supplied to the gas flow path forming part 300, which will be described later.

The through-hole 121 is a structure in which a highly reactive gas such as a cleaning gas is introduced, and a cleaning gas, which is dissociated through the supply of a gas, particularly a remote plasma generator 350, Any structure is possible.

The diffusion plate 210 may be provided under the top plate 120 to diffuse the process gas, and may have various configurations.

For example, the diffusion plate 210 may be spaced apart from the bottom surface of the top plate 120 to form a first communication space DS through which a process gas is diffused. In the first communication space DS, A suitable number of diffusion holes 218 may be formed so that the diffused process gas can be injected into the injection space IS formed by the diffusion plate 210 and the injection plate 220.

1 or 3, the top plate 120 is provided with a second gas supply hole 129 at a plurality of points for supplying a second gas into the first communication space DS, As shown in FIG.

The second gas supply hole 129 is formed in the bottom surface of the top plate 120 so as to penetrate the top plate 120 vertically at a suitable number and position at a position that does not interfere with the gas flow path forming part 300 .

The injection plate 220 may have a variety of configurations, which are spaced below the diffusion plate 210 and inject the process gas diffused by the diffusion plate 210 into the process space S.

For example, the injection plate 220 is formed with a plurality of injection holes 229 for injecting the gas injected from the first communication space DS through the second gas supply hole 129 into the process space S .

The gas flow path forming part 300 is installed between the top plate 120 and the diffusion plate 210 to guide the gas supplied from the central part of the top plate 120 to the edge of the diffusion plate 210 Various arrangements are possible as a configuration for injecting gas between the rear diffuser plate 210 and the jetting plate 220.

The gas flow path forming part 300 includes a central flow path forming part 310 coupled to the bottom surface of the top plate 120 to receive gas from a central part of the top plate 120, A plurality of branch flow path forming parts 320 coupled to the bottom surface of the diffusion plate 210 to guide the gas from the central flow path forming part 310 to the edge of the diffusion plate 210 and the first communication holes 219 And a plurality of first gas connection pipes 330 coupled to the branch flow path forming parts 320 at the edge of the injection plate 220 so as to inject gas into the space between the diffusion plate 210 and the injection plate 220 can do.

In this case, when the gas is a cleaning gas, the injection plate 220 is cleaned by the cleaning gas injected by the gas flow path forming part 300 and the cleaning gas injected by the gas flow path forming part 300 into the processing space S, .

The central flow path forming part 310 is connected to the bottom surface of the top plate 120 to receive gas from the central part of the top plate 120 and may have various configurations according to the flow path forming structure.

Specifically, the central passage forming part 310 forms a flow passage protruding from the bottom surface of the top plate 120, forming grooves in the bottom surface of the top plate 120, Various configurations are possible.

1 and 2, the central flow path forming part 310 includes a top plate 120 corresponding to the through hole 121 formed through the top plate 120, And a central flow passage forming member 311 coupled to the bottom of the branch passage forming portion 320 and corresponding to each of the plurality of branch passage forming portions 320 to form a plurality of flow passage connecting portions 313.

The central flow path forming member 311 is connected to the bottom surface of the top plate 120 and includes a plurality of branch flow paths formed so as to be supplied to the plurality of branch flow path forming parts 320, Any structure can be used as long as the plurality of flow path connection portions 313 can be formed corresponding to the plurality of flow paths 320. [

The center flow path forming portion 310 may include a central flow path forming recess 323 corresponding to the through hole 121 formed through the top plate 120 and recessed in the bottom surface of the top plate 121 And a central flow path forming member 311 which is coupled with the bottom surface of the top plate 120 so as to be folded.

The central passage forming groove 323 is recessed in the bottom surface of the top plate 121 to correspond to the through hole 121 formed through the top plate 120, And may be formed corresponding to the shape of the forming portion 310.

The central flow path forming groove 323 is coupled to the bottom surface of the top plate 120 and includes a plurality of branch flow paths 320 for transferring gas supplied through the through holes 121 to each of the plurality of branch flow path forming parts 320, And may have a plurality of flow path connection portions 313 corresponding to each of the forming portions 320.

3 and 4, the central passage forming member 311 may be formed to protrude downward from the bottom surface of the top plate 120, As shown in FIG.

At this time, a step 127 to support the central passage forming member 311 may be formed on the bottom surface of the top plate 120.

As shown in FIG. 1 or FIG. 3, the upper surface of the central passage forming member 311 may be provided with a protrusion 312 protruding upward from a position corresponding to the through hole 121.

In particular, the protrusion 312 may be pointed toward the through-hole 121.

The inner circumferential surface of the through hole 121 may have an extension 123 corresponding to the shape of the protruding portion 312 and parallel to the outer circumferential surface of the through hole 121.

As described above, when the projecting portion 312 is formed in the central flow path forming portion 310, the central flow path forming portion 310 is prevented from being thermally deformed or heated, .

1 or 3, the maximum width D2 of the bottom of the protrusion 312 is larger than the inner diameter D1 of the through hole 121 and the largest outer diameter D2 of the extension portion 123 (D3).

The plurality of branch channel forming parts 320 are connected to the bottom surface of the top plate 120 to induce the gas from the central channel forming part 310 to the edge of the diffusion plate 210, Depending on the injection distribution, the installation number and arrangement can be set variously.

More specifically, the plurality of branch channel forming portions 320 are coupled to the central channel forming portion 310 described above to form a groove on the bottom surface of the top plate 120, similar to the central channel forming portion 310 And a flow path is formed by covering with a separate member.

More specifically, for example, as shown in FIGS. 1 and 2, the plurality of diverging flow path forming parts 320 are connected to each of the plurality of flow path connecting parts 311, and are disposed on the bottom surface of the top plate 120 And the vertical cross-section in the longitudinal direction may be a U-shape.

Further, the plurality of branch flow path forming parts 320 may be formed as a tube member that forms a flow path by itself.

3 and 4, the plurality of branch channel forming portions 320 may be formed in the central channel forming groove 323 to correspond to the plurality of branch channel forming portions 320, The top plate 120 is connected to each of the plurality of flow path connection portions 313 and is provided on the bottom surface of the top plate 120 so as to cover a plurality of branch flow path forming grooves 324 having a vertical U- And may include one or more closure members 321 that are coupled to the bottom surface of the cover member 321. FIG.

The branching channel forming groove 324 is concave on the bottom surface of the top plate 121 in correspondence with the through hole 121 formed through the top plate 120, And may be formed corresponding to the shape of the forming portion 320.

3 and 4, the bottom cover of the top plate 120 is inserted inwardly to form a flat surface, and the cover plate 321 is inserted into the bottom plate of the top plate 120, .

At this time, a stepped portion 127 for supporting the clipping member 321 may be formed on the bottom surface of the top plate 120.

The plurality of first gas connection pipes 330 are connected to the injection plate 220 so as to inject gas into the gap between the diffusion plate 210 and the injection plate 220 through the first communication hole 219 formed in the diffusion plate 210. [ And is connected to each branch flow path forming portion 320 at the edge of the branch flow path forming portion 320.

For example, the first gas connection pipe 330 may include a pipe member connected to an end of each of the branch flow path forming units 320 and a first communication hole 219 penetrating the diffusion plate 210 up and down .

At this time, a first spray hole 325 is formed at the end of each branch flow path forming part 320, to which the first gas connection pipe 330 is coupled.

The plurality of first gas connection pipes 330 may be installed so that gas travels from the through holes 121 to the first communication holes 219 at the same distance.

The central passage forming part 310 is connected to the second communication hole 217 by a second gas connecting pipe 340 so that gas can be injected from the central part of the central passage forming part 310, Lt; / RTI >

The second gas connection pipe 340 connects the central flow path forming part 310 and the second communication hole 217 so as to inject gas between the diffusion plate 210 and the injection plate 220 And may be formed similarly to the first gas connection pipe 300.

The second communication hole 217 is formed in the center of the diffusion plate 210 so that the gas delivered from the central flow path forming part 310 by the second gas connection pipe 340 injects gas into the space between the diffusion plate 210 and the injection plate 220. [ And the number and position of the gas can be determined according to the amount of gas injection and injection.

At this time, the central flow path forming part 310 is formed with a second spray hole 326 to which the second gas connection pipe 340 is coupled.

The top plate 120 may have a rectangular planar shape, and the plurality of branch flow channel forming portions 320 may be provided at eight corners corresponding to the vertices and the center of the sides along the edge of the rectangular shape.

1 or 3, the gas such as a cleaning gas supplied to the gas flow path forming part 300 is discharged through the gas flow path forming part 300 ). ≪ / RTI >

As described above, before the cleaning gas is supplied to the gas flow path forming part 300, the cleaning gas is dissipated while passing through the remote plasma 250 and injected into the gas flow path forming part 300 and the injection plate 220, The edge portion can be effectively cleaned without a square.

Here, as the cleaning gas, a cleaning gas such as NF 3 may be used.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention as defined in the appended claims. It is to be understood that both the technical idea and the technical spirit of the invention are included in the scope of the present invention.

110: chamber body 120: top plate
210: diffusion plate 220: injection plate
300: cleaning gas flow path forming part
310: central flow path forming portion 320: branch flow path forming portion

Claims (8)

A chamber body having an upper opening;
A substrate support disposed in the chamber body and supporting the substrate;
A top plate installed in the opening of the chamber body to form a closed processing space;
A diffusion plate disposed under the top plate to diffuse the process gas;
An injection plate installed below the diffusion plate to inject process gas diffused by the diffusion plate into the process space;
And a gas flow path forming unit installed between the top plate and the diffusion plate for introducing a gas supplied from a central portion of the top plate to an edge of the diffusion plate and injecting gas between the diffusion plate and the injection plate And the substrate processing apparatus. The method according to claim 1,
Wherein the gas flow path forming portion comprises:
A central flow path forming part coupled to a bottom surface of the top plate and supplied with gas at a central part of the top plate,
A plurality of branch flow path forming parts coupled to a bottom surface of the top plate to guide gas from the central flow path forming part to the edge of the diffusion plate,
And a plurality of first gas connection tubes coupled to the branch flow path forming portions at the edge of the diffusion plate to inject gas into the gap between the diffusion plate and the injection plate through a first communication hole formed in the diffusion plate . The method of claim 2,
Wherein the central flow path forming portion is connected to a through hole formed through the top plate and is coupled to a bottom surface of the top plate and configured to transfer the gas supplied through the through holes to each of the plurality of branch flow path forming portions, And a central flow path forming member corresponding to each of the flow path forming portions and having a plurality of flow path connecting portions,
Wherein the branching flow path forming portion includes flow path forming members coupled to the plurality of flow path connecting portions and coupled to the bottom surface of the top plate and having a vertical U-shaped cross section in the longitudinal direction. . The method of claim 2,
The central passage forming part is coupled to a bottom surface of the top plate to cover a central passage forming groove corresponding to a through hole formed through the top plate and recessed in the bottom surface of the top plate, And a central flow path forming member for transmitting the plurality of branched flow path forming portions to each of the plurality of branch path forming portions,
Wherein the central flow path forming groove has a plurality of flow path connecting portions corresponding to each of the plurality of branch path forming portions,
The branching flow path forming portion is connected to each of the plurality of flow path connecting portions and is formed on the bottom surface of the top plate so as to cover a plurality of branching flow path forming grooves formed in a vertical U- Wherein the at least one closure member comprises at least one closure member coupled thereto. The method according to any one of claims 2 to 4,
Wherein the plurality of first gas connection pipes are provided so that gas travels from the through holes to the first communication holes at the same distance. The method according to any one of claims 2 to 4,
Wherein the plurality of branch flow path forming units are coupled to two or more sub branch flow path forming units so as to branch to two or more sub branch flow paths at the end,
Wherein the first gas connection pipe is coupled to each of the sub branch flow passage forming portions. The method according to any one of claims 2 to 4,
Wherein the diffusion plate has a plurality of second communication holes corresponding to the central flow path forming portion,
Wherein the gas flow path forming portion includes a plurality of second gas connection pipes connecting the central flow path forming portion and the second communication hole to inject gas into the gap between the diffusion plate and the injection plate through a second communication hole formed in the diffusion plate, The substrate processing apparatus comprising: The method according to any one of claims 1 to 4,
Wherein the top plate is rectangular in plan view and the plurality of branch flow passage forming portions are provided in eight corresponding to the vertex and the center of the side along the edge of the rectangular shape.
KR1020150058313A 2015-04-24 2015-04-24 Substrate processing apparatus KR102046084B1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109817554A (en) * 2019-01-31 2019-05-28 武汉华星光电半导体显示技术有限公司 A kind of gaseous diffuser
KR20200041001A (en) * 2018-10-11 2020-04-21 주식회사 테스 Gas supply unit

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Publication number Priority date Publication date Assignee Title
KR20120034087A (en) * 2012-02-23 2012-04-09 주식회사 원익아이피에스 Gas injecting assembly and apparatus for depositing thin film on wafer using the same
KR20130055353A (en) * 2011-11-18 2013-05-28 세메스 주식회사 Substrate transfering tray
KR20140117290A (en) * 2013-03-26 2014-10-07 도쿄엘렉트론가부시키가이샤 Shower head, plasma processing apparatus and plasma processing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130055353A (en) * 2011-11-18 2013-05-28 세메스 주식회사 Substrate transfering tray
KR20120034087A (en) * 2012-02-23 2012-04-09 주식회사 원익아이피에스 Gas injecting assembly and apparatus for depositing thin film on wafer using the same
KR20140117290A (en) * 2013-03-26 2014-10-07 도쿄엘렉트론가부시키가이샤 Shower head, plasma processing apparatus and plasma processing method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200041001A (en) * 2018-10-11 2020-04-21 주식회사 테스 Gas supply unit
CN111048438A (en) * 2018-10-11 2020-04-21 Tes股份有限公司 Gas supply unit
CN111048438B (en) * 2018-10-11 2023-06-13 Tes股份有限公司 Gas supply unit
CN109817554A (en) * 2019-01-31 2019-05-28 武汉华星光电半导体显示技术有限公司 A kind of gaseous diffuser
CN109817554B (en) * 2019-01-31 2020-12-25 武汉华星光电半导体显示技术有限公司 Gas diffuser

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