KR20150071107A - Deposition apparatus - Google Patents

Abstract

Disclosed is a deposition apparatus depositing a thin film on a substrate for a display device and having a spin nozzle unit which can improve deposition quality. The deposition apparatus of the substrate for the display device comprises: a cylindrical chamber providing a space in which a process for depositing the thin film is performed as a plurality of substrates are accommodated; a gas spray unit formed on an outer circumference surface of the chamber, and respectively providing different types of deposition gas; and a substrate support unit formed in the chamber and loading the substrates, and rotating the substrate by spinning around the central axis of the chamber.

Description

[0001] DEPOSITION APPARATUS [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a deposition apparatus for a substrate for a flat panel display, and more particularly, to a deposition apparatus for forming a thin film by an atomic layer deposition method in order to uniformly form a thin film on a large-

A flat panel display (FPD) includes a liquid crystal display (LCD), a plasma display panel (PDP), and an organic light emitting diode (OLED). Of these, an organic light emitting display device is attracting attention as a next generation display device in terms of characteristics such as self emission, wide viewing angle, high speed response, low power consumption and the ability to be made ultra thin. The organic light emitting display device typically includes a first electrode corresponding to an anode, a hole injection layer, a hole transfer layer, an emitting layer, an electron transfer layer (electron transfer layer) layer and an electron injection layer, and a second electrode corresponding to a cathode.

Methods for forming the organic thin film include vacuum deposition, sputtering, ion beam deposition, pulsed-laser deposition, molecular beam deposition, chemical vapor deposition (CVD), spin coater ) Can be used.

Meanwhile, a sealing film for protecting the organic thin film from moisture is needed. As a method for forming the sealing thin film, a method such as vacuum deposition, sputtering, chemical vapor deposition, and atomic layer deposition (ALD) have.

Embodiments of the present invention are intended to provide a deposition apparatus capable of uniformly depositing a thin film on a large-area substrate, such as a substrate for a flat panel display, using an atomic layer deposition method.

According to an aspect of the present invention, there is provided a deposition apparatus including: a cylindrical chamber for providing a space in which a plurality of substrates are accommodated and a thin film is deposited; And a substrate supporting unit provided inside the chamber for mounting the plurality of substrates and rotating the substrate as the substrate rotates about the center axis of the chamber, do.

According to one aspect of the present invention, the substrate supporting part includes a body, a substrate holding part provided on the surface of the body part to seat the substrate, and a heating part provided in the body part at a position corresponding to the substrate holding part, And a heater unit. For example, the substrate holding unit may hold the substrate by an electrostatic method or a vacuum. The substrate holding part may be recessed at a predetermined depth in the body part. The substrate support may have a polygonal columnar shape having a plurality of surfaces on which the substrates are mounted one by one and having a height corresponding to the length of the chamber. And a mixing prevention guard for preventing the deposition gases from mixing with each other in the chamber, and the mixing prevention guard may be provided around an edge of the substrate supporting portion.

According to one aspect of the present invention, the apparatus further comprises a plasma generating unit for generating a plasma inside the chamber, and the plasma generating unit excites the reactant gas in the deposition gas to excite the plasma into a plasma state. For example, the plasma generating unit generates a plasma by a capacitively coupled plasma (CCP) method, and a primary electrode and a secondary electrode are provided between the substrate supporting unit and the gas spraying unit, A plasma can be generated between the electrode and the secondary electrode. Also, the plasma generating unit may generate plasma by applying power to the primary and secondary electrodes only while the reactance gas is being supplied to the substrate. In the plasma generating unit, a flow path for introducing the reactance gas into the space between the primary electrode and the secondary electrode is formed in the primary electrode, and the plasma generated in the secondary electrode is supplied to the substrate A flow path can be formed.

According to one aspect of the present invention, the plasma generating unit includes a coil antenna for generating plasma by an inductively coupled plasma (ICP) method and generating an induction electric field in a jet port for providing the reactance gas, Can be provided while exciting it into a plasma state.

According to one aspect of the present invention, the gas injection unit may include a plurality of ejection ports arranged at regular intervals on the outer circumferential surface of the chamber and providing respective deposition gases.

According to one aspect of the present invention, at both ends of the chamber, an exhaust unit for sucking and exhausting exhaust gas from the chamber may be provided.

According to the embodiments of the present invention, as the substrate rotates inside the circular chamber, different kinds of deposition gases are sequentially provided to the substrate, and the thin film is deposited by the atomic layer deposition method, so that a uniform thin film can be formed on the substrate have.

1 is a perspective view of a deposition apparatus according to an embodiment of the present invention.
2 is a cross-sectional view of the deposition apparatus taken along the line I-I in FIG.
3 is a cross-sectional view of the deposition apparatus taken along line II-II in FIG.
4 is a view for explaining a CCP type plasma generator according to an embodiment of the present invention.
5 is a view for explaining an ICP type plasma generator according to an embodiment of the present invention.
6 is a cross-sectional view illustrating a substrate support according to an embodiment of the present invention.
7 is a cross-sectional view of the main portion of the substrate supporting portion of Fig.
8 is a plan view of the substrate support of Fig.
9 to 13 are views for explaining a substrate support according to modified embodiments of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited to or limited by the embodiments. In describing the present invention, a detailed description of well-known functions or constructions may be omitted for clarity of the present invention.

Hereinafter, a deposition apparatus 100 for a substrate for a flat panel display according to embodiments of the present invention will be briefly described with reference to FIGS. 1 to 8. FIG. 1 is a perspective view briefly showing a configuration of a deposition apparatus 100 according to an embodiment of the present invention. FIG. 2 is a sectional view of a deposition apparatus 100 taken along a line I-I in FIG. 1 And FIG. 3 is a cross-sectional view of the deposition apparatus 100 taken along the line II-II in FIG.

The deposition apparatus 100 is a device capable of processing a large-area substrate 10 such as a substrate for a flat panel display device (FPD), and is a device for forming a thin film by atomic layer deposition. The deposition apparatus 100 includes a cylindrical chamber 101 that accommodates a plurality of substrates 10 and provides a space in which a deposition process is performed and a cylindrical chamber 101 that is disposed at equal intervals along the outer circumferential surface of the chamber 101, A gas spraying unit 103 for supplying deposition gases of different types and a substrate supporting unit 103 for mounting the plurality of substrates 10 and rotating the substrate 10 as the center axis of the chamber 101 rotates with the rotation axis 155, (105).

For reference, in this embodiment, the substrate 10 may be a transparent substrate including a glass for a flat panel display such as a liquid crystal display (LCD) or a plasma display panel (PDP). However, the substrate 10 of the present invention is not limited thereto, and may be a silicon wafer for manufacturing a semiconductor device. In addition, the shape and size of the substrate 10 are not limited by the drawings, and may have substantially various shapes and sizes such as a circle and a square. The term 'deposition gas' in this embodiment means at least one kind of gas provided for depositing a thin film on the substrate 10, and includes a source including a constituent material of the thin film to be formed on the substrate 10 A source gas S and a reactance gas R chemically reacting with the source gas S and a purge gas R for purifying the source gas S and the reactance gas R, (P). However, the present invention is not limited thereto, and the kind of the deposition gas may be substantially varied depending on the kind of the thin film to be deposited.

The chamber 101 is formed in a cylindrical shape and has a length corresponding to the substrate 10, and the cross-section may have a diameter corresponding to the size of the substrate supporting portion 105.

The gas injection unit 103 includes injection ports 131, 132, 133 and 134 arranged at equal intervals along the circumference of the chamber 101. For example, four injection ports 131, 132, 133 and 134 are arranged at intervals of 90 degrees. 1, the injection ports 131, 132, 133, and 134 are formed in a part of the circumference of the chamber 101 and are elongated along the longitudinal direction of the chamber 101. As shown in FIG. The number of the injection ports 131, 132, 133 and 134 is not limited to the number of deposition gases 131, 132, 133 and 134, And the like. For example, the ejection ports may be equally spaced by a multiple of four, such as four, eight, and so on.

The injection ports 131, 132, 133 and 134 are provided with an injection port 131 for supplying a source gas S, a purge gas (for example, P to provide a reactant gas R and an injection port 134 to provide a purge gas P may be provided.

An exhaust part 135 is provided to exhaust the exhaust gas generated inside the chamber 101 and an exhaust part 135 is provided at both ends of the chamber 101. The exhaust portion 135 is a vacuum evacuation portion for sucking and exhausting the exhaust gas through both ends of the chamber 101.

The substrate supporting part 105 is provided inside the body part 151 and the substrate holding part 152 formed on the surface of the body part 151 and on which the substrate 10 is mounted and fixed, And a heater unit (153) for heating the substrate (10).

The heater unit 153 may be provided at a position corresponding to the substrate holding unit 152 in the body 151. When the size of the substrate supporting portion 105 is increased, the heater portion 153 is provided inside each substrate holding portion 152.

The substrate holding section 152 can hold the substrate by electrostatic method or vacuum. 7, in the case where the substrate holding portion 152 is of a vacuum type, in order to attract the substrate 10, the substrate holding portion 152 is formed so that the surface of the body portion 151 is recessed And the groove 1521 may have a shape filled with the heat-resistant resin 1522. In this case, As shown in FIG. 8, the substrate holding portion 152 may be provided with grooves in a grid shape at a predetermined interval with respect to the area corresponding to the substrate 10. On the other hand, even when the substrate holding portion 152 grasps the substrate 10 by the electrostatic method, it can be arranged in a predetermined lattice form as shown in Fig. However, the present invention is not limited to the drawings, and the shape of the substrate gripper 152 may be variously changed.

A mask 20 for forming a thin film of a predetermined pattern on the substrate 10 may be provided on a surface of the substrate 10 opposite to the gas spraying unit 103. The mask 20 serves to selectively block the deposition gas supplied from the gas spraying unit 103 so that the patterned thin film corresponding to the pattern of the mask is deposited on the substrate 10.

The deposition apparatus 100 may include plasma generating units 110 and 120 for generating plasma in order to increase the reactivity of the deposition gas. Here, the plasma generating units 110 and 120 are provided so as to provide the reactance gas R in plasma as a plasma.

Meanwhile, the plasma generating units 110 and 120 may generate plasma by a capacitively coupled plasma (CCP) method or generate plasma by an inductively coupled plasma (ICP) method .

FIG. 4 shows a CCP type plasma generator 110. FIG. Referring to FIG. 4, the CCP type plasma generating portion 110 is provided on the substrate 10, that is, between the substrate supporting portion 105 and the gas injecting portion 103. The CCP type plasma generating unit 110 includes a primary electrode 111 and a secondary electrode 112. The primary electrode 111 and the secondary electrode 112 are disposed parallel to each other with a predetermined gap therebetween. 112 is formed, and reactant gas R introduced into the plasma is excited into a plasma state, and is supplied to the substrate 10. Here, the primary electrode 111 may be provided with a flow path for introducing a reactant gas R into the space between the primary electrode 111 and the secondary electrode 112. A channel for supplying plasma generated between the primary electrode 111 and the secondary electrode 112 to the substrate 10 may be formed on the secondary electrode 112. For example, the primary electrode 111 may be provided with a plurality of holes or slits for introducing the reactant gas R, and the secondary electrode 112 may include a plurality of holes or slits .

On the other hand, the plasma generating unit 110 of the CCP method is selectively powered to generate plasma only with respect to the reactance gas R. That is, power is applied to the CCP type plasma generation unit 110 at a position corresponding to the injection port 133 where the reactance gas R is provided, and the reactance gas R is supplied to the CCP type plasma generation unit 110, And is supplied to the substrate 10 in a plasma state. In FIG. 4, power is applied to the plasma generation unit 110 located at the upper part, and power is released to the plasma generation unit 110 located at the lower part.

FIG. 5 shows the ICP type plasma generation unit 120. FIG. 5, the ICP-type plasma generating unit 120 includes a coil antenna 121 for generating an induction electric field, and the coil antenna 121 is connected to the reactance gas R of the gas injecting unit 103 Is provided on the supply flow path of the reactance gas (R) at the injection port (133).

Hereinafter, the operation of the gas injection unit 103 according to the embodiment of the present invention will be described.

First, in the state shown in Fig. 2, the substrate 10 is provided with the source gas S and the reactance gas R, respectively. Hereinafter, for convenience of explanation, the substrate 10 on which the source gas S is provided, that is, the substrate 10 shown at the bottom in FIG. 2 is referred to as a first substrate, , And the substrate 10 provided on the upper portion is referred to as a second substrate. Since the mixing prevention guard 107 is provided around the substrate support 105 and the purge gas P is injected between the mixing prevention guard 107 and the chamber 101, the source gas S and / Or the reactance gas R can be prevented from flowing to the upper and lower portions of the substrate supporter 105, thereby preventing them from being mixed with each other.

Next, in the above-described state, when the substrate supporting portion 105 is rotated by 90 degrees, the substrate 10 is provided with the purge gas P, respectively, and the source port S and the reactance gas R 131 and 133 are blocked by the mixing prevention guard 107.

The substrate 10 is again supplied with the source gas S and the reactant gas R. In contrast to the above-described state, the first substrate 10 is provided with reactance A gas R is provided, and the second substrate 10 is provided with a source gas S.

Next, when the substrate supporting portion 105 is rotated by 270 DEG, the substrate 10 is provided with purge gas P, respectively.

As described above, when the substrate support 105 rotates once, the atoms (S), the purge gas (P), the reactant gas (R), and the purge gas (P) are sequentially supplied to the first substrate One cycle of the layer deposition process is completed. As the substrate support 105 is continuously rotated, the above-described steps are repeatedly performed, and the substrate 10 is provided with a plurality of cycles of deposition gas to form a plurality of thin films and to form a thin film having a predetermined thickness. Here, the above-described embodiment is for convenience of explanation, and the order of the deposition gas provided to the substrate 10 is not necessarily limited to the above-described order.

In the above-described embodiments, the two substrates 10 are mounted on both sides of the substrate support 105. However, the present invention is not limited to the drawings, and the shape of the substrate support 105 Can be applied to a configuration in which a plurality of substrates 10 can be mounted on two or more substrates.

For example, as shown in Figs. 9 to 13, the shape of the substrate supporting portion can be variously changed. The embodiments shown in Figs. 9 to 13 are illustrations for explaining various shapes of the substrate supporting portion, and are the same as the above-described embodiments except for the shape of the substrate supporting portion. Hereinafter, only the shape of the substrate supporting portion will be briefly described.

In FIG. 9, the substrate supporting portion 215 has a triangular prism shape having a triangular cross section so that three substrates 10 can be mounted, and the substrate 10 can be mounted on three side surfaces of the substrate supporting portion 215. The mixing prevention guard 217 may be provided at each of the three corners of the substrate support 215 (the vertex portion of the triangle in the cross section shown in Fig. 9).

In FIG. 10, the substrate support 225 may have a square column shape having a rectangular cross section so that four substrates 10 can be mounted. The mixing guard 227 may be provided at four corner portions of the substrate support 225, respectively.

11, the substrate supporting portion 235 may have a pentagonal column shape having a pentagonal cross-section so as to mount five substrates 10, and a mixing prevention guard 237 may be provided at each corner.

12, the substrate support 245 has a hexagonal column shape having a hexagonal cross section so that six substrates 10 can be mounted, and six mixing prevention guards 247 can be provided at each corner.

In FIG. 13, the substrate supporting part 255 may have a vane shape so that eight substrates 10 can be mounted. 13, the anti-mix guard 247 may be provided at each end of the substrate supporter 255. As shown in FIG. In the case of the substrate supporting portion 255 shown in Fig. 13, four body portions 2551, on which two substrates 10 are mounted on both surfaces, are configured to be coupled at intervals of 90 degrees. 13, the number of the body portions 2551 on which the boards 10 are mounted is increased, and the number of the body portions 2551 mounted on the board portions 2551 The number can increase further. For example, if six body portions 2551 are provided at intervals of 60 degrees, twelve substrates 10 can be processed at the same time. If eight body portions 2551 are provided at intervals of 45 degrees, The substrate 10 can be processed.

However, the present invention is not limited to the drawings, and the substrate support may be modified into substantially various shapes other than those shown in the drawings.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. The present invention is not limited to the above-described embodiments, and various modifications and changes may be made thereto by those skilled in the art to which the present invention belongs. Accordingly, the spirit of the present invention should not be construed as being limited to the above-described embodiments, and all matters that are equivalent to or equivalent to the claims of the present invention are included in the scope of the present invention.

10: substrate
20: Mask
100: Deposition apparatus
101: chamber
103:
131, 132, 133, 134: injection port
135:
105:
151: Body part
152:
153:
155:
107: Mix prevention guard
110: CCP plasma generator
111: primary electrode
112: secondary electrode
120: ICP plasma generator
121: Coil antenna

Claims (13)

A cylindrical chamber for providing a space in which a process is performed in which a plurality of substrates are received and a thin film is deposited;
A gas injecting unit provided on an outer circumferential surface of the chamber to supply different kinds of deposition gases, respectively; And
A substrate supporting unit provided in the chamber for mounting the plurality of substrates and rotating the substrate as the substrate rotates about the central axis of the chamber;
Lt; / RTI >
The method according to claim 1,
The substrate-
Body part;
A substrate holding part provided on the surface of the body part to seat the substrate; And
A heater unit provided in the body at a position corresponding to the substrate holding unit to heat the substrate;
Lt; / RTI >
3. The method of claim 2,
Wherein the substrate holding unit grips the substrate by an electrostatic method or a vacuum.
3. The method of claim 2,
Wherein the substrate holding part is formed at a predetermined depth in the body part.
3. The method of claim 2,
Wherein the substrate supporting portion has a polygonal columnar shape having a plurality of surfaces on which the substrates are mounted one by one and having a height corresponding to the length of the chamber.
6. The method of claim 5,
And a mixing prevention guard for preventing the deposition gases from mixing with each other in the chamber,
Wherein the mixing prevention guard is provided around an edge of the substrate supporting portion.
The method according to claim 1,
Further comprising a plasma generator for generating a plasma in the chamber,
Wherein the plasma generating unit excites reactance gas in the deposition gas to excite the plasma into a plasma state.
8. The method of claim 7,
The plasma generator generates a plasma by a capacitively coupled plasma (CCP) method,
Wherein a primary electrode and a secondary electrode are provided between the substrate supporting portion and the gas spraying portion, and a plasma is generated between the primary electrode and the secondary electrode.
9. The method of claim 8,
Wherein the plasma generator generates plasma by applying power to the primary and secondary electrodes only while the reactant gas is being supplied to the substrate.
9. The method of claim 8,
The plasma generating unit may further include a flow path for introducing the reactance gas into the space between the primary electrode and the secondary electrode, the plasma generating unit may include a flow path for supplying the generated plasma to the substrate, Wherein a flow path is formed.
8. The method of claim 7,
The plasma generating unit generates plasma by an inductively coupled plasma (ICP) method,
And a coil antenna for generating an induction electric field in the ejection port for providing the reactance gas so as to excite the reactance gas in a plasma state.
The method according to claim 1,
Wherein the gas injection unit has a plurality of ejection ports arranged at regular intervals on an outer circumferential surface of the chamber and providing respective deposition gases.
The method according to claim 1,
And an exhaust part for sucking and exhausting exhaust gas from the inside of the chamber is provided at both ends of the chamber.

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