KR101171564B1 - Process Chamber of Deposition Apparatus - Google Patents

Abstract

Process chamber for a deposition apparatus according to an embodiment of the present invention, the chamber housing; A gas injection unit standing up inside the chamber housing and injecting a deposition gas to two substrates disposed on both sides; A cathode applying unit embedded in the gas injection unit and forming a cathode when a cathode voltage is applied; And an anode applying unit disposed side by side with the substrate outside the gas injection unit and forming an anode when an anode voltage is applied. According to the embodiment of the present invention, the cathode applying unit is mounted inside the gas injection unit, thereby reducing the overall device size and improving the deposition process efficiency of the substrate.

Description

Process Chamber of Deposition Apparatus

A process chamber for a deposition apparatus is disclosed. In more detail, a process chamber for a deposition apparatus is disclosed, which can reduce the overall device size by being mounted inside the gas injection unit, and can improve the deposition process efficiency of the substrate.

The flat panel display (FPD) includes a liquid crystal display (LCD), a plasma display panel (PDP), an organic light emitting diode (OLED), and the like.

Among them, an organic light emitting display device is attracting attention as a next generation display device because of its characteristics such as self-luminous, wide viewing angle, high-speed response characteristics, low power consumption, and ultra-thin characteristics. An organic light emitting display device typically includes a first electrode, a hole injection layer, a hole transfer layer, an emission layer, and an electron transport layer corresponding to an anode on a glass substrate. layer), an organic layer formed of a multilayer of an eletron injection layer, and a second electrode corresponding to a cathode.

Organic thin film formation methods include vacuum deposition, sputtering, ion-beam deposition, pulsed-laser deposition, molecular beam deposition, chemical vapor deposition (CVD), and spin coater (spin). coater).

In addition, an encapsulation thin film is required to protect the organic thin film from moisture, and methods for forming the encapsulation thin film include vacuum deposition, sputtering, chemical vapor deposition, and atomic layer deposition (ALD).

Meanwhile, among the aforementioned methods, the deposition apparatus to which the atomic layer deposition method is applied includes a process chamber for a deposition process. In general, the process chamber includes a housing, a showerhead for injecting deposition gas, a susceptor on which the substrate is seated, a cathode applying portion to which the showerhead is coupled to form a cathode when a cathode voltage is applied, and a cathode provided below the substrate. An anode applying unit forming an anode when voltage is applied is provided.

With such a configuration, when respective voltages are applied to the cathode applying portion and the anode applying portion, the deposition gas provided by the showerhead can be converted into plasma to form a thin film of a predetermined pattern on the substrate.

By the way, in the process chamber provided in the conventional deposition apparatus, since the cathode applying portion occupies a large space in the process chamber, the overall device size can be increased, and therefore, there is a disadvantage in that a large cost is required to construct the device.

Accordingly, it is urgent to develop a deposition apparatus having a new structure that can reduce the overall device size by reducing the size of the showerhead and the cathode applying unit to which it is coupled, while improving the deposition process efficiency of the substrate.

An object according to an embodiment of the present invention, the cathode applying portion is mounted inside the gas injection unit can reduce the overall device size, and thus the process chamber for the deposition apparatus that can reduce the cost required to build the device compared with the conventional To provide.

Another object according to an embodiment of the present invention, for the deposition apparatus that can improve the efficiency of the deposition process on the substrate by activating the plasmaation of the deposition gas when the respective voltage is applied to the cathode applying unit and the anode applying unit It is to provide a process chamber.

Process chamber for a deposition apparatus according to an embodiment of the present invention, the chamber housing; A gas injection unit standing up inside the chamber housing and injecting a deposition gas to two substrates disposed at both sides; A cathode embedded in the gas injection unit, the cathode forming a cathode when a negative voltage is applied; And an anode applying unit disposed side by side with the substrate outside the gas injection unit to form an anode when an anode voltage is applied, and by this configuration, the cathode applying unit is mounted inside the gas injection unit. As a result, the overall device size can be reduced, and the efficiency of the substrate deposition process can be improved.

Here, both side walls of the gas injection unit are connected to a moving line through which the deposition gas is transferred from the outside, and an injection buffer unit for injecting the deposition gas to the substrate is formed, and the cathode applying unit is non-interfering with the injection buffer unit. It may be mounted to the inner central region of the gas injection unit.

The anode applying unit may be disposed inside the chamber housing facing the gas injection unit with respect to the substrate.

The anode applying unit may be disposed in an area between the gas injection unit and the substrate.

In the anode applying unit, a plurality of through holes corresponding to the plurality of injection holes are formed to prevent interference when the deposition gas is injected toward the substrate from the plurality of injection holes provided in the injection buffer unit. Can be.

The process chamber for the deposition apparatus may further include a magnetic force generating unit disposed on both sides of the anode applying unit and applying magnetic force to the radical particles that have been plasma-formed by the mutual electrical action of the cathode applying unit and the anode applying unit. .

The process chamber for the deposition apparatus may include: a substrate transfer unit mounted to the chamber housing to be disposed at both sides of the gas injection unit, and configured to hold or transfer the substrate in an upright state; A heater unit mounted to the chamber housing to be disposed at the side of the substrate and applying heat to the substrate; And an exhaust gas discharge part mounted to a lower portion of the chamber housing and discharging the exhaust gas generated as a result of the deposition process on the substrate.

According to the embodiment of the present invention, the cathode applying portion is mounted inside the gas injection unit, thereby reducing the overall device size, and thus, the cost required to construct the device can be reduced as compared with the related art.

In addition, according to an embodiment of the present invention, when respective voltages are applied to the cathode applying unit and the anode applying unit, plasma deposition of the deposition gas may be activated to improve the efficiency of the deposition process on the substrate.

In addition, according to an embodiment of the present invention, the plasma generated particles by the electric force generated when the power is applied to the cathode applying unit and the anode applying unit, and the magnetic force generated by the magnetic force generating unit can be deposited on the substrate The deposition process efficiency can be further improved.

1 is a schematic configuration diagram of an upright deposition apparatus according to an embodiment of the present invention.
2 is a perspective view schematically showing an internal configuration of a process chamber for a deposition apparatus according to an embodiment of the present invention.
3 is a configuration diagram schematically illustrating the configuration of FIG. 2.
4 is a view schematically showing an internal configuration of a process chamber for a deposition apparatus according to another embodiment of the present invention.

Hereinafter, configurations and applications according to embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following description is one of several aspects of the patentable invention and the following description forms part of the detailed description of the invention.

In the following description, well-known functions or constructions are not described in detail for the sake of clarity and conciseness.

Hereinafter, the substrate to be deposited may be a substrate for a flat panel display device such as a liquid crystal display (LCD), a plasma display panel (PDP), or the like. However, the substrate of the present invention is not limited thereto, and may be a silicon wafer. In addition, the shape and size of the substrate is not limited by the drawings, it is natural that it can have a variety of shapes and sizes, such as circular and square.

1 is a schematic configuration diagram of an upright deposition apparatus according to an embodiment of the present invention.

As shown here, the upright deposition apparatus 100 according to an embodiment of the present invention includes a buffer module 110, a transfer module 120, and a process chamber 130.

Here, the buffer module 110 is a portion in which the substrate W is stored, and a loading buffer 111 for loading the substrate W from the outside with the upright deposition apparatus of the present embodiment, and a deposition process It may include an unloading buffer unit 113 for unloading the completed substrate (W). In addition, the buffer module 110 may further include a mask buffer unit 112 that stores a mask (not shown) for forming a thin film having a predetermined pattern on the substrate W. However, the position and number of each component of the buffer module 110 are not limited by FIG. 1.

The transfer module 120 is disposed between the buffer module 110 and the process chamber 130 to transfer the substrate W or the mask. However, since the deposition process is performed while the process chamber 130 of the present embodiment is standing upright with the substrate W, the transfer module stands up and transfers the substrate W. FIG. In this case, a transfer robot (not shown) may be mounted in an inner space of the transfer module 120 to transfer the substrate W between the process chamber 130 and the transfer module 120. In addition, although not shown, the transfer module 120 may include an aligner (not shown) for aligning and coupling the substrate W and the mask.

Meanwhile, hereinafter, a process chamber for a deposition apparatus according to an embodiment of the present invention will be described with reference to FIGS. 2 and 3.

FIG. 2 is a perspective view schematically showing an internal configuration of a process chamber for a deposition apparatus according to an embodiment of the present invention, and FIG. 3 is a schematic view showing a configuration of FIG. 2.

Referring to FIG. 2, a process chamber 130 for a deposition apparatus according to an embodiment of the present invention includes a chamber housing 131 and two substrates standing up on both sides of the chamber housing 131 and disposed on both sides thereof. A gas injection unit 140 for injecting a deposition gas into the W), a cathode applying unit 170 built in the gas injection unit 140 to form a cathode when a cathode voltage is applied, and a gas injection unit ( It includes an anode applying unit 180 disposed parallel to the substrate (W) outside the 140 to form an anode when an anode voltage is applied.

In addition, the process chamber 130 of the present embodiment may be disposed on both sides of the gas injection unit 140 to provide a substrate transfer unit 150 and a substrate W for maintaining or transferring the substrate W in an upright state. The apparatus may further include a heater unit 155 for applying heat and an exhaust gas discharge unit 160 for discharging the exhaust gas generated as a result of the deposition process on the substrate W.

Referring to each configuration, first, the chamber housing 131 forms a deposition space. Although not shown, the chamber housing 131 may be mounted to open and close an entrance door (not shown), thereby moving the substrate W of the transfer module 120 to the deposition space of the chamber housing 131. The substrate W on which the deposition process is completed may be moved back to the transfer module 120.

Meanwhile, as shown in FIG. 2, the heater unit 155 is disposed on the back side of the substrate W to not only heat the substrate W to a temperature suitable for being deposited, but also the temperature inside the chamber housing 131. It serves to maintain and heat to the temperature required for deposition. The heater unit 155 may be a wire heater that can apply the same heat to the front surface of the substrate (W). However, the present invention is not limited thereto, and the heater unit 155 may be provided in another type.

The substrate transfer unit 150 of the present embodiment not only transfers the substrate W in a standing state but also serves to maintain the position of the substrate W inside the chamber housing 131. In this case, the substrate W may be added to the process chamber 130 alone, or may be added while a mask (not shown) is mounted to form a thin film of a predetermined pattern, thereby forming a thin film. The mask may be mounted on the deposition surface of the substrate W to selectively block the deposition gas injected from the gas injection unit 140 to form a thin film having a predetermined pattern.

On the other hand, the exhaust gas discharge unit 160 of the present embodiment is provided under the chamber housing 131 serves to discharge the exhaust gas generated during the process to the outside of the chamber housing 131. The exhaust gas discharge unit 160 may be formed of a plurality of exhaust holes formed in the bottom surface of the chamber housing 131. However, the present invention is not limited thereto, and the position and shape of the exhaust gas discharge unit 160 may be changed in various ways.

On the other hand, the gas injection unit 140 of the present embodiment, as shown in Figure 2, in front and rear in the central region of the inner side of the chamber housing 131 to inject the deposition gas toward the substrate (W) standing on both sides It is provided long along the direction. On both side walls of the gas injection unit 140, an injection buffer unit 141 connected to a deposition gas supply unit (not shown) for supplying deposition gas and a moving line 145 to inject the deposition gas onto the substrate is formed. The injection buffer unit 141 includes a buffer space 142 through which the introduced deposition gas is diffused, and a plurality of injection holes 143 for spraying the deposition gas diffused to the entire area of the buffer space 142 onto the substrate W. ) Can be provided.

Although not illustrated, the deposition gas supply unit may include a source gas supply tank (not shown) for supplying a source gas and a purge gas supply tank (not shown) for supplying a purge gas. The source gas or the purge gas may be sequentially supplied from the source gas supply tank and the purge gas supply tank to form a thin film having a predetermined pattern on the substrate (W).

On the other hand, as described above, when the deposition gas is injected through a shower head (not shown) in the prior art, a process of plasma deposition of the deposition gas (process), thereby performing a deposition process for the substrate (W) To this end, the deposition apparatus generally includes a cathode applying unit to which a cathode voltage is applied and an anode applying unit to which a cathode voltage is applied.

With this configuration, when the cathode voltage and the anode voltage are applied to the respective application portions, the deposition gas injected through the shower head may be plasmaized, and the radical particles plasmad by the electric force generated in the direction of the anode application portion Can be deposited on a substrate.

However, in the related art, the cathode applying unit is mounted on the outside of the showerhead to increase the overall device size of the process chamber, and accordingly, there is a disadvantage in that a large cost is required to construct the device.

In order to solve this problem, the process chamber 130 according to the embodiment of the present invention, as schematically shown in FIGS. 2 and 3, is provided inside the gas injection unit 140 to apply a cathode voltage. In this case, a cathode applying unit 170 forming a cathode and an anode applying unit forming an anode to which an anode voltage is applied and disposed in parallel with the substrate W outside the gas injection unit 140 ( 180) further.

The cathode applying unit 170 of the present embodiment is disposed in the space between the injection buffer unit 141 formed on both side walls of the gas injection unit 140, as schematically shown in a partial enlarged view of FIG. It is mounted so as not to interfere with the portion 141.

Therefore, when the deposition gas is injected through the injection hole 141 of the gas injection unit 140, interference such as chemical interaction between the cathode applying unit 170 and the deposition gas may be prevented.

The cathode applying unit 170 is connected to a cathode voltage supply unit (not shown) for supplying a cathode voltage, and when a cathode voltage is applied from the cathode voltage supply unit, the cathode applying unit 170 becomes a cathode state and electrically interacts with the cathode applying unit 180 to be described later. can do.

However, in the present embodiment, the cathode applying unit 170 is provided in a single piece so as not to interfere with the injection buffer unit 141 between both side walls of the gas injection unit 140, but the structure or number of the cathode applying unit 170 is The present invention is not limited thereto, and if it is possible to manufacture, the cathode applying unit (not shown) may be provided in plural and may be regularly mounted in the gas injection unit 140.

On the other hand, the anode applying unit 180 may be disposed at a position facing the gas injection unit 140 with respect to the substrate (W). When the anode voltage is applied to the anode applying unit 180, the anode is in an anode state, and the deposition gas injected from the gas injection unit 140 may be plasmaized by electrically interacting with the cathode applying unit 170 described above. In addition, by generating an electric force in the direction of the anode applying unit 180 in the cathode applying unit 170 so that the plasmalized radical particles can be transferred to the substrate (W) to improve the deposition process efficiency of the substrate (W) Can be.

Here, the anode applying unit 180 may be provided integrally with the above-described heater unit 155, as shown in FIG. However, the present invention is not limited thereto, and may be manufactured separately according to manufacturing requirements and mounted in the process chamber 130.

On the other hand, the process chamber 130 of the present embodiment, in addition to the above-described configuration, as shown in Figs. 2 and 3, disposed on both sides of the anode applying unit 180, the cathode applying unit 170 and the anode applying unit ( The magnetic force generating unit 190 may further include a magnetic force applied to the radical particles plasmad by the 180.

Here, the magnetic force generating unit 190 is provided with a magnet (magnet) material having a magnetism, the magnetic force generating unit 190 by applying a magnetic force to the plasma particles to the radical further improves the deposition process efficiency of the substrate (W) Can be improved.

In detail, the radical particles plasma-formed by the electric force generated by the negative electrode applying unit 170 and the positive electrode applying unit 180 are transferred to the substrate W while moving in a waveform, wherein the magnetic force generating unit 190 Magnetic wave transmitted to the radical particles increases the waveform behavior of the radical particles and thus the deposition process of the substrate W as the collision between the radical particles and the surrounding particles (particles such as ions or electrons) is intensified. The efficiency can be improved.

As such, according to one embodiment of the present invention, the cathode applying unit 170 is mounted inside the gas injection unit 140 to reduce the overall device size. In addition, when respective voltages are applied to the cathode applying unit 170 and the anode applying unit 180, plasma deposition of the deposition gas may be activated to improve the efficiency of the deposition process for the substrate W. FIG. There is an advantage.

In addition, the plasma particles formed by the electric force generated when the power is applied to the cathode applying unit 170 and the anode applying unit 180 and the magnetic force generated by the magnetic force generating unit 190 may be deposited on the substrate W. FIG. It is also possible to further improve the deposition process efficiency for the substrate (W).

Meanwhile, hereinafter, a process chamber for a deposition apparatus according to another embodiment of the present invention will be described with reference to the accompanying drawings. However, the same description as that described in the process chamber for the deposition apparatus according to the embodiment of the present invention will be omitted.

4 is a view schematically showing an internal configuration of a process chamber for a deposition apparatus according to another embodiment of the present invention.

As shown in the drawing, in the anode applying unit 180 of the process chamber 230 according to another embodiment of the present invention, the anode applying unit 180 (refer to FIG. 3) of the above-described embodiment has an outer side of the substrate W. Unlike being disposed in, it is disposed between the gas injection unit 240 and the substrate (W).

The anode applying unit 280 electrically reacts with the cathode applying unit 270 built in the gas injection unit 240, thereby plasmalizing the deposition gas injected through the gas injection unit 240.

However, in the anode applying unit 280, the gas injection unit 240 may reach the substrate W after the deposition gas injected through the injection hole 241 of the gas injection unit 240 is converted into plasma. A plurality of through holes 281 corresponding to the injection holes 241 may be formed through.

Thus, according to another embodiment of the present invention, the cathode applying unit 270 is disposed inside the gas injection unit 240 and the anode applying unit 280 of the gas injection unit 240 and the substrate (W) By being disposed between the overall size can be further reduced, and thus there is an advantage that can be reduced compared to the conventional cost for building the device.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention. Therefore, such modifications or variations will have to be belong to the claims of the present invention.

100: upright deposition apparatus 110: buffer module
120: transfer module 130: process chamber
131: chamber housing 140: gas injection unit
150: substrate transfer unit 160: exhaust gas discharge unit
170: cathode applying unit 180: anode applying unit
190: magnetic force generating unit

Claims (7)

Chamber housings;
A gas injection unit standing up inside the chamber housing and injecting a deposition gas to two substrates disposed at both sides;
A cathode applying unit embedded in the gas injection unit and forming a cathode when a cathode voltage is applied; And
An anode applying unit disposed in parallel with the substrate outside the gas injection unit and forming an anode when an anode voltage is applied;
Process chamber for deposition apparatus comprising a.
The method of claim 1,
Both side walls of the gas injection unit are connected to a moving line through which the deposition gas is transferred from the outside, and injection buffers for injecting the deposition gas to the substrate are formed.
The cathode applying unit,
And a process chamber mounted to an inner central region of the gas injection unit so as not to interfere with the injection buffer unit.
The method of claim 2,
And the anode applying unit is disposed inside the chamber housing facing the gas injection unit with respect to the substrate.
The method of claim 2,
And the anode applying unit is disposed in a region between the gas injection unit and the substrate.
The method of claim 4, wherein
In the anode applying unit, a plurality of through holes corresponding to the plurality of injection holes are formed to prevent interference when the deposition gas is injected toward the substrate from the plurality of injection holes provided in the injection buffer unit. Process chamber for the deposition apparatus.
The method of claim 1,
And a magnetic force generating unit disposed at both sides of the anode applying unit and applying magnetic force to the radical particles plasmad by the mutual electrical action of the cathode applying unit and the anode applying unit.
The method of claim 1,
A substrate transfer unit mounted to the chamber housing so as to be disposed at both sides of the gas injection unit, and configured to hold or transfer the substrate in an upright state;
A heater unit mounted to the chamber housing to be disposed at the side of the substrate and applying heat to the substrate; And
And an exhaust gas discharge part mounted to a lower portion of the chamber housing and discharging the exhaust gas generated as a result of the deposition process on the substrate.

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