KR102291656B1 - Position detection device and vapor deposition apparatus - Google Patents

Abstract

A position detecting apparatus and a vapor deposition apparatus are provided so as to improve the detection accuracy with respect to the position of a substrate. The position detecting device 10 includes a first phase by light reflected from the flat portion Wp1 of the substrate W, and a second phase by light reflected from the bevel portion Wp2 connected to the flat portion Wp1. The photographing unit 11 for photographing, and the boundary between the flat portion Wp1 and the bevel portion Wp2 based on the contrast of the first image and the second image are extracted as a part of the outer shape of the substrate W, and the extracted An image processing unit 12 for specifying the position of the substrate W from a part of the external shape is provided.

Description

POSITION DETECTION DEVICE AND VAPOR DEPOSITION APPARATUS

The present invention relates to a position detecting device for detecting the position of a substrate and a deposition apparatus having the position detecting device.

A vapor deposition apparatus arrange|positions a vapor deposition mask between the film-forming surface of a board|substrate and an evaporation source, and forms on the film-forming surface of a board|substrate the pattern of the shape following the opening of a vapor deposition mask. The deposition apparatus detects the position of the substrate from the substrate mark, which is an alignment mark of the substrate. The vapor deposition apparatus calculates a shift between the detected position of the substrate and the position of the vapor deposition mask, and adjusts the position of the substrate or the position of the vapor deposition mask (see, for example, Patent Document 1).

Patent Document 1: Japanese Patent Application Laid-Open No. 2013-1947

By the way, the above-described substrate mark is usually located on the film-forming surface of the substrate, and the detection unit for detecting the substrate mark is located on the same side as the deposition source with respect to the film-forming surface. On the other hand, the space on the side of the deposition source with respect to the deposition surface is a space in which the deposition material sublimed from the deposition source flies, and the deposition material is deposited in the optical system of the detection unit located in this space to a small extent. Since it is impossible to accurately detect a substrate mark in the detection unit in which the deposition material is deposited in the optical system, the above-described deposition apparatus is required to have a technique for increasing the precision of alignment between the substrate and the deposition mask. In addition, the request for precisely detecting the position of the substrate is not limited to the vapor deposition apparatus for aligning the substrate and the vapor deposition mask, but is common to the apparatus for detecting the position of the substrate.

An object of the present invention is to provide a position detection device and a deposition device capable of improving the detection accuracy of the position of the substrate.

One aspect is a position detecting device. The position detection device includes: a photographing unit for photographing a first image by light reflected from a flat portion of a substrate and a second image by light reflected from a bevel portion connected to the flat portion; and an image processing unit that extracts a boundary between the flat portion and the bevel portion based on image contrast as a part of the outer shape of the substrate, and specifies the position of the substrate from the extracted part of the outer shape.

Another aspect is a vapor deposition apparatus. The deposition apparatus includes a position detecting device for detecting the position of the substrate, an evaporation source facing the surface of the substrate, and a deposition mask positioned between the surface and the evaporation source. The position detecting device includes a photographing unit for photographing a first image by light reflected from a flat portion of the back surface of the substrate and a second image by light reflected from a bevel portion connected to the flat portion, and the first image and an image processing unit for extracting a boundary between the flat portion and the bevel portion based on the contrast of the second image as a part of the outer shape of the substrate, and specifying the position of the substrate from the extracted part of the outer shape.

The bevel portion defining the outline of the substrate is usually a curved surface having a predetermined curvature in the thickness direction of the substrate. In the image which image|photographed the bevel part, the brightness falls gradually toward the outline of a board|substrate, for example, and the amount of blurring also increases gradually. Therefore, in the technique of detecting the outline of the board|substrate from the image which image|photographed the bevel part, a large error generate|occur|produces in the position of the detected outline. On the other hand, the boundary between the bevel portion and the flat portion is a boundary in which the plane direction changes greatly in the substrate, and is also a portion where the boundary between the bevel portion and the flat portion can be clearly detected, for example, in imaging in the direction opposite to the flat portion. And with the above configuration, since the image processing unit detects the position of the substrate from this boundary based on the contrast of the first image by the light reflected from the flat part and the second image by the light reflected by the bevel part, the position of the substrate is detected precision can be improved.

In the position detection device, the photographing unit is a first photographing unit, the substrate includes a front surface and a back surface including a substrate mark, and further comprising a second photographing unit facing the surface and photographing the substrate mark . and the first photographing unit captures the first image and the second image opposite to the back surface, and the image processing unit extracts the first image and the second image photographed by the first photographing unit. The position of the back surface of the substrate is specified from a part of the outer shape, and the image processing unit specifies the position of the surface of the substrate from the position of the substrate mark imaged by the second imaging unit, and The deviation amount can be calculated.

In the deposition apparatus, the photographing unit is a first photographing unit, and the surface of the substrate includes a substrate mark, and further includes a second photographing unit facing the surface to photograph the substrate mark. And, the first photographing unit faces the back surface to photograph the first image and the second image, and the image processing unit is based on the first image and the second image photographed by the first photographing unit. to specify the position of the back surface of the substrate from a part of the outer shape extracted by The amount of position shift can be calculated.

According to each of the above structures, it is possible to specify the surface position based on the position of the substrate mark by imaging on the surface of the substrate, and the back surface based on the boundary between the flat part and the bevel part by imaging from the back surface of the substrate. It is possible to specify the location. Therefore, it is also possible to achieve alignment of the processing position between the processing performed based on the front surface position and the processing performed based on the back surface position among the processing performed on the substrate.

In the above vapor deposition apparatus, comprising: a conveying unit having the position detecting device as a first position detecting device; and a deposition chamber having a second position detecting device mounted thereon, wherein the back side position is a first back side position, and the second position The detection device includes: a third photographing unit for photographing a third image by light reflected from the flat portion of the rear surface and a fourth image by light reflected from the bevel portion connected to the flat portion of the rear surface; A boundary of the flat portion and the bevel portion based on the contrast of the image and the fourth image is extracted as a part of the outer shape of the substrate, and a second back surface position, which is the position of the substrate, is specified from the part of the extracted outer shape, wherein the a second image processing unit for estimating a position of the surface in the deposition chamber from a second rear surface position and the amount of displacement, wherein the deposition mask includes a mask mark on a surface opposite to the surface; 3 The photographing unit photographs the mask mark from a direction opposite to the back surface, and the second image processing unit specifies the position of the deposition mask from the position of the mask mark photographed by the third photographing unit, and the position of the deposition mask It is possible to calculate a relative position of the surface position estimated by the second image processing unit with respect to .

According to the vapor deposition apparatus, since the detection accuracy of the relative position between the substrate and the vapor deposition mask can be improved, the accuracy can also be increased in the processing relating to the relative position of the substrate and the vapor deposition mask.

1 is a block diagram showing the configuration of a position detection device together with a substrate, (a) is a cross-sectional view of the substrate, and (b) is a relative relationship between a plan view of the substrate and a photographing range of an external camera indicates the location.
Fig. 2 is a diagram showing an example of an image photographed by an external camera;
3 is a block diagram showing the configuration of a deposition apparatus;
4 is a configuration diagram showing the configuration of an EFEM.
5 is a plan view showing the planar structure of the substrate together with the photographing range of each camera.
6 is a block diagram showing the configuration of a deposition chamber;
7 is a plan view showing the planar structure of the substrate together with the photographing range of the external camera.
Fig. 8 is a block diagram for explaining various processes performed by the vapor deposition process;

An embodiment of the position detecting device and the deposition device will be described.

[Position detection device]

As FIG. 1 shows, the board|substrate W is provided with the front surface WF and the back surface WR. The outer peripheral portion Wp of the front surface WF is provided with a flat portion Wp1 and a beveled portion Wp2, and the outer peripheral portion Wp of the back surface WR is also provided with a flat portion Wp1 and a beveled portion Wp2. do.

The flat portion Wp1 is a flat portion extending along the front surface WF of the substrate W and a flat portion extending along the back surface WR of the substrate W. Each bevel portion Wp2 has a curvature in which the center of curvature is located on the center side of the substrate W with respect to the bevel portion Wp2 in a cross section along the thickness direction of the substrate W (see FIG. 1A ). have In addition, in FIG.1(b), the camera 11 for external appearance shows the state which image|photographs the back surface WR of the board|substrate W, and also shows the example in which the shape of the board|substrate W is a disk shape.

The position detecting device 10 includes an external camera 11 and an image processing unit 12 .

The external camera 11 is, for example, a CCD camera, and is an example of a photographing unit (first photographing unit). The photographing range 11Z of the external camera 11 is a size including a part of the flat part Wp1 and a bevel part Wp2 connected to the part. Moreover, at the time of conveyance of the board|substrate W, the conveyance precision which is the difference between the position after conveyance and its target position is set within a predetermined range. The photographing range 11Z of the external camera 11 is sufficiently larger than this range.

The optical axis 11A of the camera 11 for external appearance is located in the vicinity of the boundary of the flat part Wp1 and the bevel part Wp2, for example. The light irradiated to the outer periphery Wp of the substrate W may be parallel light traveling from the external camera 11 toward the external camera 11 along the optical axis 11A of the external camera 11, or the external camera. Parallel light traveling in a direction different from the optical axis 11A of (11) may be used. When the optical axis of the light irradiated to the outer periphery Wp of the substrate W and the optical axis 11A of the external camera 11 coincide, the external camera 11 emits light to the outer periphery Wp using the photographing optical system. An investigation unit for investigation is provided. When the optical axis of the light irradiated to the outer periphery Wp of the substrate W and the optical axis 11A of the external camera 11 are different, the irradiating part irradiating light to the outer periphery Wp is separate from the external camera 11 , located on the same side as the external camera 11 with respect to the substrate W.

The external camera 11 forms an image by the light reflected from the imaging range 11Z. As shown in FIG. 2 , the image PIC photographed by the external camera 11 is a first image PIC1 by light reflected from the flat portion Wp1 and a bevel connected to the flat portion Wp1 . and a second phase PIC2 by the light reflected from the portion Wp2. For example, when parallel light is irradiated to the back surface WR in a direction perpendicular to the back surface WR of the substrate W, the incident angle of the light incident on the flat portion Wp1 is approximately 0°, and the flat portion Wp1 The reflection angle of the specularly reflected light emitted from Wp1) is also approximately 0°. Therefore, the external camera 11 having an optical axis orthogonal to the back surface WR generates the first image PIC1 having a very high brightness. On the other hand, since the bevel portion Wp2 is a curved surface, the incident angle of the light incident on the bevel portion Wp2 continuously changes from 0° toward the outside of the substrate W, and the reflection angle of the specular reflection light emitted from the bevel portion Wp2 changes more than 0°. Therefore, the external camera 11 having an optical axis orthogonal to the back surface WR generates the second image PIC2 having a very low brightness compared to the first image PIC1 . As a result, in the image PIC photographed by the external camera 11, the first image PIC1 by the light reflected by the flat portion Wp1 and the second image by the light reflected by the bevel portion Wp2 There is a big difference in contrast between the two phases (PIC2).

The image processing unit 12 performs edge detection based on the contrast using the image PIC photographed by the external camera 11 and extracts a boundary between the first image PIC1 and the second image PIC2. In addition, the image processing unit 12 uses the extracted boundary between the first phase PIC1 and the second phase PIC2 , that is, the boundary between the flat portion Wp1 and the bevel portion Wp2 , as a part of the outer shape of the substrate W . specify In addition, the position of the optical axis 11A of the external camera 11 or the position of the shooting range 11Z of the external camera 11 is determined by a coordinate system unique to the external camera 11 (eg, XYθ coordinate system). all. The image processing unit 12 calculates the boundary between the first phase PIC1 and the second phase PIC2 in this coordinate system, and thereby specifies a part of the outer shape of the substrate W.

2 : is an example of the image which the camera 11 for external appearance image|photographed.

As FIG. 2 shows, the image PIC contains the image PICW of the board|substrate W, and the background image (PICB) of the board|substrate W. As shown in FIG. A portion of the image PICW of the substrate W having relatively high brightness is the image of the flat portion Wp1 , that is, the first phase PIC1 . In contrast, a portion of the image PICW of the substrate W having relatively low brightness is the image of the bevel portion Wp2 , that is, the second image PIC2 . The brightness of the background image PICB of the substrate W is lower than that of the first phase PIC1 but higher than that of the second phase PIC2.

Here, the outline E of the substrate W is an outline connecting the points located at the outermost side of the substrate W, and is also an outline of the bevel portion Wp2. As described above, this bevel portion Wp2 is usually constituted by a curved surface having a predetermined curvature. The curved surface of the bevel portion Wp2 gradually lowers the brightness of the image PICW of the substrate W toward the contour E of the substrate W, and the second image PIC2 and the substrate as the image of the bevel portion Wp2 Blur the boundary of the background image (PICB) in (W). Then, when the contour E of the substrate W is detected at the boundary between the second image PIC2 and the background image PICB, a large error is caused in the accuracy of the position. In particular, in detection in which the precision of several micrometers is requested|required for the position of the board|substrate W, the ambiguity in the above-mentioned boundary becomes a very large error.

On the other hand, the boundary between the bevel portion Wp2 and the flat portion Wp1 is a boundary at which the plane direction changes in the substrate W, for example, in imaging in the direction opposite to the flat portion Wp1, the first image ( The boundary between PIC1) and the second phase PIC2 is clearly detected. Therefore, if the boundary between the first phase PIC1 and the second phase PIC2 is the above configuration specified as a part of the external shape of the substrate W, in detecting the position of the substrate W using the external shape, It becomes possible to improve the detection precision.

[Deposition device]

Referring to FIG. 3 , the deposition apparatus 20 on which the position detection device is mounted will be described. In addition, the vapor deposition apparatus 20 is an example, and what is necessary is just to be equipped with the EFEM(Equipment Front End Module) 23 and the vapor deposition chamber 24 which are an example of a conveyance part. In addition, in the following example, the EFEM 23 is used for the surface position specification process and the back surface position specification process. The deposition chamber 24 is used for other rear surface position specification processing.

Further, in the surface position specification processing, the substrate mark located on the surface WF of the substrate W is photographed, and from the photographing result, the image processing unit 12 selects the pattern center as an example of the position (surface position) of the substrate. Calculate. In the rear surface position specification processing, the outer peripheral portion Wp on the rear surface WR of the substrate W is photographed, and from the photographing result, the image processing unit 12 is an example of the position of the substrate (the first rear surface position). A first substrate center is calculated. Moreover, in another back surface position specifying process, the outer peripheral part Wp in the back surface WR of the board|substrate W is image|photographed, and the image processing part 12 determines the position of the board|substrate (2nd back surface position) from the imaging result. A second substrate center, which is an example of , is calculated. Further, in the vapor deposition apparatus 20 , the image processing unit 12 calculates an amount of shift between the center of the pattern and the center of the first substrate specified using the EFEM 23 . Further, in the vapor deposition apparatus 20, the image processing unit 12 reflects the shift amount with respect to the center of the second substrate, and arranges the substrate W so that the center of the mask, which is the center of the deposition mask, and the center of the pattern are aligned.

As FIG. 3 shows, the vapor deposition apparatus 20 is equipped with the conveyance chamber 21, The conveyance chamber 21 is connected with the carrying-in/out chamber 22 via a gate valve. The transfer chamber 21 includes a transfer robot that transfers the substrate W. The carry-in/out chamber 22 loads a substrate from the outside of the transfer chamber 21 into the transfer chamber 21 , and unloads the substrate from the transfer chamber 21 to the outside of the transfer chamber 21 . The EFEM 23 is connected to the carry-in/out chamber 22 via a gate valve. The EFEM 23 transfers the substrate before film formation to the carry-in/out chamber 22, and loads the substrate after film formation from the carry-in/out chamber 22. The EFEM 23 includes a detection mechanism 30 that supports the substrate W.

Two deposition chambers 24 , an inversion chamber 25 , and a sputtering chamber 26 are connected to the transfer chamber 21 . Each chamber is connected to the transfer chamber 21 via a gate valve. The deposition chamber 24 forms a predetermined thin film on the substrate W by vacuum deposition. The inversion chamber 25 inverts the substrate W loaded into the inversion chamber 25 . The inversion in the inversion chamber 25 is the position of the front surface WF and the back surface WR of the substrate W in the vertical direction when the substrate W is loaded into the inversion chamber 25 and the inversion chamber 25 ), and vice versa. The sputter chamber 26 forms a predetermined thin film on the substrate W by a sputtering method.

The deposition apparatus 20 includes a control device 20C, the control device 20C includes the image processing unit 12 described above, and each chamber 21 , 22 , 23 , 24 included in the deposition apparatus 20 . , 25, 26) to control the driving. The control device 20C controls the driving of the transfer robot, for example, to transfer the substrate W from one chamber connected to the transfer chamber 21 to the other chamber through the transfer chamber 21 to the transfer robot. . The controller 20C controls, for example, the driving of mechanisms related to the film formation process in each deposition chamber 24 and the film deposition process in the sputter chamber 26, whereby each deposition chamber 24 and sputter chamber 26 are configured. A predetermined thin film is formed on the

[Configuration of EFEM]

The configuration of the EFEM 23 will be described with reference to FIGS. 4 and 5 . Hereinafter, the configuration of the detection mechanism 30 among the configurations of the EFEM 23 will be mainly described.

As Fig. 4 shows, the detection mechanism 30 includes a stage 31, a plurality of mark cameras 11M, and a plurality of rod cameras 11L. Hereinafter, an example including three mark cameras 11M and three road cameras 11L will be described.

The stage 31 supports the substrate W to be processed. The substrate W includes a front surface WF and a rear surface WR, and three substrate marks are located on the surface WF of the substrate W. In the EFEM 23 , the substrate W is placed on the stage 31 with the surface WF on which the three substrate marks are located facing upward. Each substrate mark is used in order to match the position of the opening which a deposition mask has with a specific position in the surface WF of the substrate W.

Each mark camera 11M is, for example, a CCD camera, and is an example of a 2nd imaging|photography part. Each mark camera 11M is being fixed above the board|substrate W supported by the stage 31. As shown in FIG. The position of the optical axis 11MA of each mark camera 11M is fixed with respect to the position of the optical axis 11MA of the other mark cameras 11M. Each mark camera 11M image|photographs the range which included a board|substrate mark among the flat part Wp1 of the surface WF. The image PICM of the surface WF photographed by each mark camera 11M is used for surface position specification processing.

Each road camera 11L is the camera 11 for external appearance mentioned above, and is an example of a 1st imaging|photography part. It is fixed below the stage 31. The position of the optical axis 11AL of each road camera 11L is fixed with respect to the position of the optical axis 11AL of the other road cameras 11L. Each road camera 11L faces the back surface WR of the substrate W and captures an image by the light reflected from the outer periphery Wp of the substrate W. Each rod camera 11L photographs a different portion from the portion photographed by the other rod cameras 11L among the outer periphery Wp of the substrate W. As shown in FIG. The image PICL of the back surface WR photographed by each road camera 11L is used for the back surface position specification processing. In addition, the image PICL of the back surface WR photographed by each road camera 11L is used for matching the pattern center calculated by the surface position specifying process and the substrate center calculated by the back surface position specifying process.

5 shows a planar structure of the substrate W as viewed from a plane facing the surface WF of the substrate W. As shown in FIG. In FIG. 5 , for convenience of explanation, the shape of the substrate W is made into a disk shape, and the area photographed by each mark camera 11M and the area photographed by each road camera 11L are superimposed on the substrate W and shown.

As FIG. 5 shows, the stage 31 determines the virtual arrangement area|region WA (double-dotted line in FIG. 5) as a target area|region for arranging the board|substrate W. The substrate W is placed on the stage 31 so that the virtual arrangement area WA and the outline E (solid line in Fig. 5) of the substrate W substantially coincide. The surface WF of the substrate W has three substrate marks Wm. Each of the substrate marks Wm is located closer to the center of the substrate than the outer periphery Wp of the substrate W.

Each mark camera 11M defines an area in which an image is to be photographed as a photographing range 11MZ (double-dotted line in Fig. 5). Each imaging range 11MZ is distributed almost equally in the circumferential direction of the arrangement area WA. The optical axis 11MA of the mark camera 11M is positioned at the center of each shooting range 11MZ. The position and size of each imaging range 11MZ are set to include each substrate mark Wm based on the conveyance precision of the substrate W. As shown in FIG.

The area photographed by each road camera 11L is the photographing range 11ZL, and is equally distributed in the circumferential direction of the arrangement area WA. The optical axis 11AL of the road camera 11L is positioned at the center of each shooting range 11ZL. The position and size of each imaging range 11ZL are set to include the boundary between the flat portion Wp1 and the bevel portion Wp2 based on the conveyance accuracy of the substrate W.

[Configuration of deposition chamber]

The configuration of the deposition chamber 24 will be described with reference to FIGS. 6 and 7 . Hereinafter, the configuration of the deposition mechanism, which is a mechanism for performing deposition on the substrate W, among the configurations of the deposition chamber 24 will be mainly described.

As shown in FIG. 6 , the deposition chamber 24 includes an evaporation source 41 for discharging a sublimated deposition material, a plurality of deposition cameras 11V, a substrate holder 42 supporting the substrate W, A mask holder 43 supporting the deposition mask M, a driving source 44 , and a driving mechanism 45 are provided. In the deposition chamber 24, the vacuum chamber 24A accommodating the deposition source 41, the substrate holder 42, and the mask holder 43 is connected to an exhaust system and is reduced to a predetermined pressure. In addition, below, the example provided with three vapor deposition cameras 11V is demonstrated.

The deposition source 41 heats the deposition material to form a thin film of the deposition material 42M on the surface WF of the substrate W. As the evaporation source 41, for example, a resistance heating type evaporation source, an induction heating type evaporation source, or an electron beam evaporation source can be used. The vapor deposition material 42M is a material that evaporates by being heated by the vapor deposition source 41 , and is a material of a thin film formed on the surface WF of the substrate W . The vapor deposition material 42M is, for example, an organic material, but may be an inorganic material.

Each vapor deposition camera 11V is the said external camera 11, and is an example of a 1st imaging|photography part or a 3rd imaging|photography part. It is fixed to the deposition chamber 24 . The position of the optical axis 11AV of each deposition camera 11V is fixed with respect to the position of the optical axis 11AV of the other deposition cameras 11V. Each deposition camera 11V faces the back surface WR of the substrate W, and photographs an image by the light reflected from the outer periphery Wp of the substrate W. Each deposition camera 11V photographs different portions of the outer periphery Wp of the substrate W. As shown in FIG. The image PICV photographed by each deposition camera 11V is used for the back surface position specification processing.

The substrate holder 42 is positioned between the three deposition cameras 11V and the deposition source 41 . The substrate holder 42 defines a virtual placement area WA, which is an area in which the substrate W is disposed. The substrate holder 42 supports the substrate W loaded into the deposition chamber 24 from the inversion chamber 25 . The substrate holder 42 makes it possible to transport the substrate W from the deposition chamber 24 to the inversion chamber 25 . The substrate holder 42 supports the outer peripheral portion Wp of the surface WF by facing the surface WF of the substrate W toward the evaporation source 41 side (lower side in FIG. 6 ), and the back surface WR of the substrate W ) and three deposition cameras (11V) face each other.

At this time, for example, since obstacles, such as the board|substrate holder 42, exist, the board|substrate mark Wm located in the surface WF is difficult to image|photograph from the side opposite to the surface WF. Moreover, since the board|substrate Wm located on the front surface WF does not have sufficient transparency or the board|substrate W is opaque, for example, it is difficult to image|photograph also from the side opposing the back surface WR. That is, in the state in which the substrate holder 42 supports the substrate W, it is difficult to detect the position of the substrate mark Wm.

The mask holder 43 is located between the three deposition cameras 11V and the deposition source 41 . The mask holder 43 defines a virtual arrangement area MA, which is an area in which the deposition mask M is disposed. The mask holder 43 supports the outer periphery of the deposition mask M, and faces the surface WF of the substrate W and the deposition mask M. The deposition mask M has an opening for forming a predetermined pattern on the surface WF of the substrate W. The mask holder 43 arranges the deposition mask M on the deposition source 41 side with respect to the substrate W. The deposition mask M has a size protruding from the substrate W in the entire circumferential direction of the substrate W. The deposition mask M has three mask marks Mm in portions protruding from the substrate W. As shown in FIG. In addition, the mask mark Mm which the vapor deposition mask M has is used for specifying the center position of the vapor deposition mask M by imaging|photography with the vapor deposition camera 11V.

The drive source 44 outputs power for driving the drive mechanism 45 . The driving mechanism 45 receives power from the driving source 44 to move the substrate holder 42 in the horizontal direction. In addition, the driving mechanism 45 receives power from the driving source 44 to rotate the mask holder 43 and the substrate holder 42 in the circumferential direction of the substrate W. The drive mechanism 45 switches the independent rotation of the substrate holder 42 , the independent rotation of the mask holder 43 , and the rotation of the substrate holder 42 and the mask holder 43 integrally. Further, the driving mechanism 45 receives power from the driving source 44 to raise and lower the mask holder 43 and the substrate holder 42 . The drive mechanism 45 switches between independent raising/lowering of the substrate holder 42, independent raising/lowering of the mask holder 43, and raising/lowering the board|substrate holder 42 and the mask holder 43 integrally.

For example, independent horizontal movement of the substrate holder 42 or independent rotation of the substrate holder 42 is used to match the pattern center of the substrate W with the mask center. The independent rotation of the mask holder 43 is used to place the deposition mask M in a predetermined position. The rotation in which the substrate holder 42 and the mask holder 43 are integrated is used to deposit the deposition material on the surface of the substrate W.

For example, the independent lifting and lowering of the substrate holder 42 is used for loading and unloading the substrate W or for arranging the substrate W to a predetermined position for vapor deposition. The independent raising/lowering of the mask holder 43 is used for carrying in and carrying out the vapor deposition mask M, and arrangement|positioning of the vapor deposition mask M to the predetermined position for vapor deposition. The lifting/lowering which integrated the substrate holder 42 and the mask holder 43 is used for movement at the time of rotating the board|substrate W and the vapor deposition mask M integrally.

FIG. 7 shows a planar structure of the substrate W as viewed from a plane facing the back surface WR of the substrate W. As shown in FIG. In FIG. 7, for convenience of description, the shape of the board|substrate W is made into a disk shape, and the area|region which each vapor deposition camera 11V image|photographs is superimposed on the board|substrate W, and is shown.

As shown in FIG. 7 , the substrate W is disposed in the placement area WA and the deposition mask M is disposed in the placement area MA. The position of the mask mark Mm is set so that it may be located outside the outline E of the board|substrate W. The mask mark Mm has a rectangular shape in a plan view facing the back surface WR of the substrate W, but may have a shape different from the rectangular shape, for example, a cross shape.

The area photographed by each deposition camera 11V is the photographing range 11ZV, and is almost equally distributed in the circumferential direction of the arrangement area WA. The optical axis 11AV of each deposition camera 11V is positioned at the center of each imaging range 11ZV. The boundary between the flat part Wp1 and the bevel part Wp2 is included in the imaging range 11ZV, and each mask mark Mm is included in each imaging range 11ZV, based on the transfer precision of the substrate W Thus, the positions and sizes of the three photographing ranges 11ZV are set.

[Action]

With reference to Fig. 8, the surface position specification processing, the back surface position specification processing and the alignment processing performed by the control device 20C (the image processing unit 12) will be described.

[Surface position specification processing]

First, the control device 20C arranges the substrate W in the arrangement area WA determined on the stage 31 in the surface position specification processing. Next, as FIG. 8 shows, the control apparatus 20C makes each mark camera 11M image|photograph the image PICM of the surface WF including the board|substrate mark Wm. And 20C of control apparatus (image processing part 12) acquires the image PICM which each mark camera 11M image|photographed from EFEM23. Control device 20C (image processing unit 12) uses image PICM photographed by each mark camera 11M so that, for example, an imaginary circle centered on the pattern center passes through each substrate mark Wm Calculate the position of the center of the pattern.

[Backside position specification processing: EFEM(23)]

First, in the rear surface position specification processing in the EFEM 23 , the control device 20C irradiates light to the rear surface WR of the substrate W disposed on the stage 31 , and is reflected by the flat portion Wp1 . The road camera 11L captures an image PICL including the first image PIC1 by the emitted light and the second image PIC2 by the light reflected from the bevel part Wp2. Next, the control device 20C (the image processing unit 12 ) acquires the image PICL photographed by the road camera 11L from the EFEM 23 .

The control device 20C (the image processing unit 12) uses the image PICL photographed by the road camera 11L, and based on the contrast of the image PICL, the first image PIC1 and the second image PIC1 The boundary of the PIC2, that is, the boundary between the flat portion Wp1 and the bevel portion Wp2 on the back surface WR is extracted. Then, the controller 20C (the image processing unit 12) calculates the position of the center of the first substrate so that an imaginary circle centering on the center of the first substrate passes through each boundary.

Moreover, in the EFEM 23, the imaging|photography of the board|substrate mark Wm by each mark camera 11M, and imaging|photography of the flat part Wp1 and the bevel part Wp2 by each road camera 11L may be performed simultaneously Or you may carry out at each timing. When performing two photographing at respective timings, photographing by each mark camera 11M may be performed before photographing by each road camera 11L, and photographing by each road camera 11L is performed by each mark camera ( 11M) may be performed prior to imaging. When performing two imaging|photography at each timing, you may rotate the board|substrate W between two imaging|photography.

In addition, the imaging|photography of the board|substrate mark Wm by each mark camera 11M may be performed simultaneously, and may be performed at each timing, and the flat part Wp1 and the bevel part Wp2 by each road camera 11L. may be performed simultaneously, or may be performed at respective timings. In addition, you may rotate the board|substrate W every time imaging|photography is performed with one camera. In particular, the positions of the substrate marks Wm may be different for each substrate W, and in a state in which the positions of the substrates W are fixed at one position, all the substrate marks Wm may not be photographed. In this case, what is necessary is just to rotate the board|substrate W every time one board|substrate mark Wm is image|photographed. When photographing the plurality of substrate marks Wm while rotating the substrate W, the relative position between the plurality of substrate marks Wm can be grasped by the rotation angle of the substrate W. In addition, the rotation angle of the substrate W can be detected by a detection unit that detects the rotation angle, and an encoder can be used as the detection unit, for example.

[Backside position specification processing: deposition chamber 24]

First, in the rear surface position specification processing in the deposition chamber 24 , the control device 20C places the substrate W in the placement area WA defined on the substrate holder 42 . Then, the control device 20C irradiates light to the back surface WR of the substrate W, and reflects light reflected from the first phase PIC1 and the bevel portion Wp2 by the light reflected from the flat portion Wp1. The image PICV including the second phase PIC2 by the deposition camera 11V is photographed.

The control device 20C (the image processing unit 12 ) acquires the image PICV photographed by the deposition camera 11V from the deposition chamber 24 . The control device 20C (the image processing unit 12) uses the image PICV photographed by the deposition camera 11V, and based on the contrast of the image PICV, the first phase PIC1 and the second phase ( The boundary of the PIC2, that is, the boundary between the flat portion Wp1 and the bevel portion Wp2 on the back surface WR is extracted. And the control apparatus 20C (image processing part 12) calculates the position of the center of a 2nd board|substrate so that an imaginary circle centering on the center of a 2nd board|substrate may pass through each boundary.

[Position alignment method]

First, the control device 20C (the image processing unit 12), for example, with respect to the first substrate W, uses the pattern center and the first substrate center obtained by imaging with the EFEM 23 to obtain a pattern center and The amount of deviation from the center of the first substrate (Δｘ, Δｙ, Δθ) is calculated.

Next, the control device 20C (the image processing unit 12 ) uses the image PICV captured by the deposition camera 11V when the first substrate W is loaded into the deposition chamber 24 to center the mask. The position of the center of the mask is calculated so that an imaginary circle centering on is passed through each mask mark Mm. Then, the control device 20C (the image processing unit 12) reflects the shift amount with the center of the second substrate, and calculates the correction amount for aligning the center of the second substrate with the center of the mask. The control device 20C outputs a drive signal SIG for driving the drive source 44 in order to drive the drive mechanism 45 with a drive amount corresponding to the correction amount.

As described above, according to the embodiment, the following effects are obtained.

(1) the substrate W from this boundary based on the contrast of the first phase PIC1 by the light reflected from the flat portion Wp1 and the second phase PIC2 by the light reflected by the bevel portion Wp2 ), the precision of detecting the position of the substrate W can be improved.

(2) In particular, since the position of the substrate W is detected using the boundary between the flat portion Wp1 and the bevel portion Wp2, even in the substrate W not having the substrate mark Wm, the position can be detected. Further, even when the substrate W does not have sufficient transparency or is opaque, and the position detection of the substrate W is required by photographing from a surface that does not have the substrate mark Wm, the substrate W is operated with high precision. position can be detected.

(3) It is possible to specify the pattern position by imaging from the front surface WF of the substrate W, and it is possible to specify the center of the first substrate by imaging from the back surface WR of the substrate W . Therefore, it is also possible to achieve alignment of the processing positions between the processing performed based on the pattern position, such as sputter film formation, and the processing performed based on the first substrate position, such as vapor deposition film formation.

(4) In particular, when the substrate W does not have sufficient transparency or is opaque, the substrate mark Wm cannot be optically detected from the side opposite to the back surface WR. high.

(5) Since the positional accuracy of the substrate W with respect to the deposition mask M can be improved, in the processing relating to the relative position of the substrate W and the deposition mask M, the processing accuracy can be increased do.

In addition, the above-mentioned embodiment can be implemented by changing suitably as follows.

- The position detecting device specifies the position of the substrate W only from the position of the boundary between the extracted flat portion Wp1 and the bevel portion Wp2. By changing this, the position detecting device specifies the position of the substrate W using the position of the boundary between the extracted flat portion Wp1 and the bevel portion Wp2 and other information for specifying the position of the substrate W. may be Other information for specifying the position of the substrate W is a position of a feature point such as a notch provided in the substrate W, a rotation angle of the substrate W, and the like.

- The boundary used by the position detection device for specifying the position of the substrate W may be one of the outer peripheral portions Wp of the substrate W, or may be one or more. For example, the shape of the boundary between the flat portion Wp1 and the bevel portion Wp2 is microscopically different for each processing of the bevel portion Wp2, that is, for each substrate W, and is a unique shape for each substrate W. There are cases. In the configuration for specifying the position of the substrate W from the boundary of one of the outer peripheral portions Wp, first, the shape of the boundary between the flat portion Wp1 and the bevel portion Wp2 is defined over the entire circumference of the substrate W. collected in advance as And the position of the board|substrate W is specified by specifying which part of the whole perimeter shape is the shape of the boundary of the extracted flat part Wp1 and the bevel part Wp2.

In addition, when calculating the center of a 1st board|substrate and when calculating the center of a 2nd board|substrate, it is preferable to image|photograph the part which contains the substantially same bevel part Wp2 among the outer peripheral parts Wp. For this reason, the precision of detecting the position of the board|substrate W can further be improved. In addition, the control device 20C includes a photographing range 11ZL of the road camera 11L and a deposition camera 11V based on the position of feature points such as a notch included in the substrate W and the rotation angle of the substrate W. A portion including approximately the same bevel portion Wp2 in the outer peripheral portion Wp may be positioned in the photographing range 11ZV of .

The position of the substrate W specified by the position detection device can be at least one of the center of the substrate W, the contour of the substrate W, and a feature point other than the center calculated from the center or contour of the substrate W. have.

- One or two rental units may be sufficient as the quantity of the road camera 11L with which a vapor deposition apparatus is equipped, and 4 or more units may be sufficient as it. When the number of the road cameras 11L is one or two, as described above, the position of the substrate W is specified using information different from the photographing result of the road camera 11L.

- One or two rental units may be sufficient as the quantity of vapor deposition camera 11V with which a vapor deposition apparatus is equipped, and four or more may be sufficient as it. When the quantity of the deposition cameras 11V is one or two, as described above, the position of the substrate W is specified using information different from the photographing result of the deposition cameras 11V.

- In the above embodiment, the image processing unit 12 may be provided as a single image processing unit, or may be functionally divided into two or more image processing units. For example, the image processing unit 12 includes a first image processing unit that processes an image photographed by the mark camera 11M and an image photographed by the road camera 11L in the detection mechanism 30 of FIG. 4; In the vapor deposition chamber 24 of FIG. 6, it may be divided into the 2nd image processing part which processes the image image|photographed by the vapor deposition camera 11V. In other words, the position detecting device may be functionally divided into a first position detecting device including a first image processing section and a second position detecting device including a second image processing section. Alternatively, these first and second image processing units may be realized by a single image processing unit.

E: contour M: deposition mask
W : Substrate MA, WA : Placement area
Mm: mask mark WF: surface
Wm: substrate mark Wp: outer periphery
WR: Backside PIC: Image
SIG: drive signal Wp1: flat part
Wp2: Bevel part PIC1: Phase 1
PIC2: Phase 2 PICB: Background Phase
PICL, PICM, PICV: Image 10: Position detection device
11: External camera 11A, 11AL, 11AV, 11MA: Optical axis
11AL: Optical axis 11AV: Optical axis
11L : road camera 11M : mark camera
11Z, 11MZ, 11ZV: shooting range 11V: deposition camera
12: image processing unit 20: deposition apparatus
20C: control device 21: transfer chamber
22: carry-in/out chamber 23: EFEM
24: deposition chamber 24A: vacuum chamber
25: inversion chamber 26: sputter chamber
30: detection mechanism 31: stage
41: evaporation source 42: substrate holder
42M: deposition material 43: mask holder
44: drive source 45: drive mechanism

Claims (5)

A photographing unit for photographing the first image by the light reflected from the flat portion of the substrate and the second image by the light reflected from the bevel portion connected to the flat portion;
and an image processing unit for extracting a boundary between the flat portion and the bevel portion based on the contrast of the first image and the second image as a part of the outer shape of the substrate, and specifying the position of the substrate from the part of the extracted outer shape; do,
The photographing unit is a first photographing unit,
The substrate comprises a front surface and a back surface comprising a substrate mark,
Further comprising a second photographing unit for photographing the substrate mark facing the surface,
The first photographing unit is to face the back surface and photograph the first image and the second image,
The image processing unit uses the image of the back surface including the first image and the second image captured by the first photographing unit to form an imaginary circle centered on the center of the first substrate of the substrate to define the boundary. calculating the position of the center of the first substrate of the substrate to pass through,
The image processing unit uses the image of the surface including the substrate mark photographed by the second photographing unit, so that an imaginary circle centered on the pattern center of the substrate passes through the substrate mark. A position detecting device for calculating the position of , and calculating a shift amount between the center of the pattern and the center of the first substrate. delete a position detection device for detecting the position of the substrate;
an evaporation source facing the surface of the substrate;
a deposition mask positioned between the surface and the deposition source;
The position detection device,
A photographing unit for photographing a first image by light reflected from a flat portion of the back surface of the substrate and a second image by light reflected from a bevel portion connected to the flat portion;
and an image processing unit for extracting a boundary between the flat portion and the bevel portion based on the contrast of the first image and the second image as a part of the outer shape of the substrate, and specifying the position of the substrate from the part of the extracted outer shape; do,
The photographing unit is a first photographing unit,
the surface of the substrate comprises a substrate mark,
Further comprising a second photographing unit for photographing the substrate mark facing the surface,
The first photographing unit is to face the back surface and photograph the first image and the second image,
The image processing unit uses the image of the back surface including the first image and the second image captured by the first photographing unit to form an imaginary circle centered on the center of the first substrate of the substrate to define the boundary. calculating the position of the center of the first substrate of the substrate to pass through,
The image processing unit uses the image of the surface including the substrate mark photographed by the second photographing unit, so that an imaginary circle centered on the pattern center of the substrate passes through the substrate mark. A deposition apparatus for calculating the position of , and calculating an amount of deviation between the center of the pattern and the center of the first substrate. delete 4. The method of claim 3,
a conveying unit having the position detecting device as a first position detecting device;
A deposition chamber equipped with a second position detection device,
The backside position is a first backside position,
The second position detection device,
A third photographing unit for photographing a third image by the light reflected from the flat portion of the rear surface and a fourth image by the light reflected from the bevel portion connected to the flat portion of the rear surface;
The boundary of the flat portion and the bevel portion based on the contrast of the third image and the fourth image is extracted as a part of the outer shape of the substrate, and the second back surface position, which is the position of the substrate, is specified from the extracted part of the outer shape. a second image processing unit for estimating the surface position in the deposition chamber from the second rear surface position and the deviation amount;
The deposition mask has a mask mark on the surface opposite to the surface,
The third photographing unit photographs the mask mark from a direction opposite to the back surface,
The second image processing unit specifies the position of the deposition mask from the position of the mask mark imaged by the third imaging unit, and the relative of the surface position estimated by the second image processing unit to the position of the deposition mask. A deposition device that calculates a position.

Images