CN113097422A - Substrate alignment device and method, mask plate and wafer substrate - Google Patents

Substrate alignment device and method, mask plate and wafer substrate Download PDF

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Publication number
CN113097422A
CN113097422A CN201911342679.1A CN201911342679A CN113097422A CN 113097422 A CN113097422 A CN 113097422A CN 201911342679 A CN201911342679 A CN 201911342679A CN 113097422 A CN113097422 A CN 113097422A
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China
Prior art keywords
substrate
alignment
aligned
mask plate
alignment mark
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CN201911342679.1A
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Chinese (zh)
Inventor
张耀辉
丁熙荣
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Hefei Sineva Intelligent Machine Co Ltd
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Hefei Sineva Intelligent Machine Co Ltd
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Priority to CN201911342679.1A priority Critical patent/CN113097422A/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited

Abstract

The disclosure provides a substrate alignment device and method, a mask plate and a wafer substrate, relates to the technical field of display, and is used for solving the problem that alignment of a non-transparent substrate and the mask plate cannot be realized in an optical alignment mode. Wherein the base plate aligning device comprises: the mask plate adjusting part is used for bearing and adjusting the position of the mask plate, and a first alignment mark with a hollow structure is arranged on the mask plate; the substrate adjusting part is used for bearing and adjusting the position of the substrate to be aligned, a second alignment mark with a hollow structure or a groove structure is arranged on the substrate to be aligned, the second alignment mark can be covered by the orthographic projection of the first alignment mark, and the mask plate is positioned on the first side of the substrate to be aligned; the infrared light source is used for emitting infrared light, the infrared light is incident from one side of the mask plate, which is far away from the substrate to be aligned, and the infrared light is projected to the substrate to be aligned through the first alignment mark; and the image sensor is arranged on the second side of the substrate to be aligned and used for acquiring an image of the substrate to be aligned. The substrate alignment device is used for aligning the non-transparent substrate and the mask plate.

Description

Substrate alignment device and method, mask plate and wafer substrate
Technical Field
The disclosure relates to the technical field of display, in particular to a substrate alignment device and method, a mask plate and a wafer substrate.
Background
In the manufacturing process of an OLED (Organic Light-Emitting Diode) display panel, an Organic Light-Emitting material layer needs to be formed on a substrate to be vapor-deposited by a process such as vapor deposition. Before vapor deposition, a substrate to be vapor-deposited needs to be aligned with a mask plate. In the prior art, the substrate to be evaporated is a transparent glass substrate, so that an image of an alignment mark on a mask plate can be acquired through the glass substrate by using an image acquisition device (for example, an optical camera and the like) in an optical alignment mode, and then the alignment of the alignment mark on the substrate to be evaporated and the alignment mark on the mask plate is enabled by adjusting the relative position between the substrate to be evaporated and the mask plate, so that the alignment of the substrate to be evaporated and the mask plate is realized. The optical alignment mode is simple to operate and high in alignment precision.
However, for a non-transparent substrate to be deposited, such as a Wafer (Wafer) substrate, the image capturing device cannot capture an image of the alignment mark of the mask plate through the non-transparent substrate to be deposited, and therefore, the alignment between the substrate to be deposited and the mask plate cannot be achieved by the above optical alignment method.
Disclosure of Invention
To solve the problems in the prior art, embodiments of the present disclosure provide a substrate alignment device and method, a mask plate, and a wafer substrate, so as to solve the problem that an optical alignment method in the prior art cannot achieve alignment between a non-transparent substrate and the mask plate.
In order to achieve the purpose, the embodiment of the disclosure adopts the following technical scheme:
in a first aspect, an embodiment of the present disclosure provides a substrate alignment apparatus, including: the mask adjusting component is used for bearing a mask and adjusting the position of the mask, and a first alignment mark with a hollow structure is arranged on the mask; the substrate adjusting part is used for bearing a substrate to be aligned and adjusting the position of the substrate to be aligned, a second alignment mark with a hollow structure or a groove structure is arranged on the substrate to be aligned, the second alignment mark can be covered by the orthographic projection of the first alignment mark on the substrate to be aligned, the substrate to be aligned is provided with a first side and a second side which are opposite, and the mask plate is positioned on the first side of the substrate to be aligned in the alignment process; the infrared light source is used for emitting infrared light, and in the alignment process, the infrared light is incident from one side of the mask plate, which is far away from the substrate to be aligned, and is projected to the substrate to be aligned through the first alignment mark; and the image sensor is arranged on the second side of the substrate to be aligned and used for acquiring the image of the substrate to be aligned.
In the process of aligning the mask plate and the substrate to be aligned by using the substrate aligning device, the part of the mask plate except the first alignment mark is made of metal materials, infrared light can be prevented from penetrating through the mask plate, the infrared light can penetrate through the hollowed first alignment mark and is projected to the substrate to be aligned on the other side, then infrared projection is formed on the surface of the second side of the substrate to be aligned, and the outline of the infrared projection corresponds to the first alignment mark. And adjusting the position of the substrate to be aligned and/or the position of the mask plate to enable at least part of the second alignment mark to be in the infrared projection range, wherein the thickness of the part of the substrate to be aligned, which corresponds to the second alignment mark, is different from the thickness of the part around the substrate to be aligned, so that parts with different light and shade degrees are formed in the infrared projection. Therefore, the image of the surface of the second side of the substrate to be aligned is collected, the position deviation between the first alignment mark and the second alignment mark can be determined through the position relation between the parts with different brightness degrees in the infrared projection in the image or the position relation between the infrared projection in the image and the opening, located on the surface of the second side of the substrate to be aligned, of the second alignment mark, the relative position of the mask plate and the substrate to be aligned is adjusted accordingly, the second alignment mark is completely located in the range of the infrared projection, and therefore accurate alignment of the mask plate and the opaque substrate to be aligned is achieved.
Based on the above technical solution, in some embodiments, the infrared light source is disposed on the second side of the substrate to be aligned; the substrate alignment device further comprises a reflection component arranged on one side of the mask plate, which is far away from the substrate to be aligned, and the reflection component is used for reflecting infrared light emitted by the infrared light source to the mask plate.
In some embodiments, the reflective member includes a first reflective surface and a second reflective surface, the first reflective surface being opposite to the infrared light source, the first reflective surface being configured to reflect infrared light emitted by the infrared light source to the second reflective surface; the second reflecting surface is opposite to the mask plate, and the second reflecting surface is used for reflecting the infrared light reflected by the first reflecting surface to the mask plate.
In some embodiments, the infrared light source is disposed on a first side of the substrate to be aligned.
In some embodiments, the substrate alignment apparatus further comprises a conditioning control component and a processor. The processor is coupled with the adjustment control component and the image sensor, and is configured to acquire an image of the substrate to be aligned from the image sensor, analyze a position deviation between the first alignment mark and the second alignment mark, and send an adjustment instruction to the adjustment control component according to the position deviation; the adjusting control component is connected with the mask plate adjusting component and the substrate adjusting component and used for controlling the mask plate adjusting component and/or the substrate adjusting component to move according to the received adjusting instruction, so that the orthographic projection of the first alignment mark on the substrate to be aligned covers the second alignment mark.
In some embodiments, at least two first alignment marks are disposed on the mask, and at least two second alignment marks corresponding to the at least two first alignment marks in a one-to-one manner are disposed on the substrate to be aligned. The base plate aligning device comprises at least two groups of aligning units, and each group of aligning units comprises: one said infrared light source and one said image sensor; the at least two groups of alignment units correspond to the at least two first alignment marks one by one.
In a second aspect, an embodiment of the present disclosure provides a mask plate, which is characterized by being applied to the substrate alignment apparatus in any one of the embodiments described above. The mask plate includes: the mask plate comprises a mask plate main body and a first hollow alignment mark arranged on the mask plate main body. The first alignment mark comprises a graph part and a plurality of first alignment reference parts, and the plurality of first alignment reference parts are positioned around the graph part; the dimension of the pattern portion is larger than that of each first alignment reference portion in a direction perpendicular to a width extending direction of the first alignment reference portion.
The beneficial effects that the mask can produce are the same as those of the substrate alignment device provided by the first aspect, and are not repeated here.
Based on the above technical solution, in some embodiments, the length extension directions of at least two first alignment reference portions of the plurality of first alignment reference portions are perpendicular to each other.
In some embodiments, the shape of the graphic portion is at least one of circular, elliptical, rectangular, or regular polygonal; the plurality of first alignment reference parts are arranged at equal intervals along an edge of the pattern part.
In a third aspect, an embodiment of the present disclosure provides a wafer substrate, which is applied to the substrate alignment apparatus in any one of the above embodiments, and the wafer substrate is matched with the mask plate in any one of the above embodiments for use. The wafer substrate includes: the wafer substrate comprises a wafer substrate main body and a second alignment mark arranged on the wafer substrate main body. The second alignment mark is a hollow structure or a groove structure; the orthographic projection of the first alignment mark of the mask plate on the wafer substrate can cover the second alignment mark.
The beneficial effects of the wafer substrate are the same as those of the substrate alignment apparatus provided in the first aspect, and are not described herein again.
Based on the above technical solution, in some embodiments, the second alignment mark is a groove structure, and an opening of the groove structure is located on a surface of the wafer substrate that is not to be vapor-deposited; the thickness of the wafer substrate main body is 2-100 times of the depth of the groove structure.
In some embodiments, the second alignment marker comprises a plurality of second alignment reference portions; in a case where the first alignment mark includes a pattern portion and a plurality of first alignment reference portions, orthographic projections of the plurality of first alignment reference portions on the wafer substrate can be directed to the plurality of second alignment reference portions in a one-to-one correspondence.
In a fourth aspect, an embodiment of the present disclosure provides a substrate alignment method, which is applied to the substrate alignment apparatus in any of the embodiments described above, and the substrate alignment method includes: emitting infrared light by using an infrared light source, so that the infrared light is incident from one side of a mask plate, which is far away from a substrate to be aligned, and is projected to the substrate to be aligned through a first alignment mark of the mask plate; acquiring an image of the substrate to be aligned from a second side of the substrate to be aligned by using an image sensor; analyzing the image to determine a positional deviation between the first alignment mark and the second alignment mark; and adjusting the position of the mask plate and/or the substrate to be aligned according to the position deviation, so that the orthographic projection of the first alignment mark on the substrate to be aligned covers the second alignment mark.
The beneficial effects of the substrate alignment method are the same as the beneficial effects of the substrate alignment apparatus provided in the first aspect, and are not described herein again.
Drawings
In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and other drawings can be obtained by those skilled in the art according to the drawings. Furthermore, the drawings in the following description may be regarded as schematic diagrams and are not intended to limit the actual size of products, the actual flow of methods, and the like, involved in the embodiments of the present disclosure.
Fig. 1 is a block diagram of a substrate alignment apparatus according to some embodiments of the present disclosure;
FIG. 2 is an enlarged view of a portion of the area SS of FIG. 1;
fig. 3 is a top view block diagram of a mask according to some embodiments of the present disclosure;
fig. 4 is a top view of a substrate/wafer substrate to be aligned according to some embodiments of the present disclosure;
fig. 5 is a schematic view of an alignment process of a mask and a substrate to be aligned/wafer substrate according to some embodiments of the present disclosure;
fig. 6 is a schematic view of another alignment process of a mask and a substrate to be aligned/wafer substrate according to some embodiments of the present disclosure;
FIG. 7 is a schematic top view of an infrared projection, according to some embodiments of the present disclosure;
FIG. 8 is another enlarged partial view of the area SS in FIG. 1;
FIG. 9 is a schematic top view of another infrared projection, according to some embodiments of the present disclosure;
FIG. 10 is a schematic top view of a first alignment mark according to some embodiments of the present disclosure;
fig. 11 is a flow chart of a substrate alignment method according to some embodiments of the present disclosure.
Description of reference numerals:
100-substrate alignment device; 1-a mask plate adjusting part;
2-a substrate adjustment component; 3-an infrared light source;
4-an image sensor; 5-a reflective member;
6-a processor; 10-a mask plate;
101-a first alignment mark; 1011-graphic part;
1012-first alignment reference part; 102-a mask plate main body;
20-aligning the substrate/wafer substrate; 201-a second alignment marker;
2011-second alignment reference portion; 202-a wafer substrate body;
01-infrared projection; 011-first part;
012-a second part; 110-alignment unit;
1000-vapor deposition equipment; 200-a cavity;
300-an evaporation source; 400-film thickness detection device;
7-adjusting the control means; a-a first side of a substrate to be aligned;
b-the second side of the substrate to be aligned.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present disclosure more comprehensible, embodiments accompanying the present disclosure will be described in detail. It is to be understood that the described embodiments are merely a subset of the disclosed embodiments and not all embodiments. All other embodiments derived by one of ordinary skill in the art from the embodiments disclosed herein are intended to be within the scope of the present disclosure.
As described in the background section, the organic light emitting material layer may be formed on the substrate by means of evaporation. In the vapor deposition, a mask plate with patterns and a substrate to be vapor deposited are aligned and attached, wherein the mask plate is made of a metal material, and precise hollow patterns are arranged on the mask plate. And then, heating the organic material to evaporate the organic material into a gaseous state, and depositing the organic material on the substrate after the organic material passes through the hollow pattern. Thus, an organic light emitting material layer having a certain pattern is formed on the substrate. In this case, the organic light emitting material layer needs to be formed at a designated position on the substrate, for example, in the case where the anode layer has been formed on the substrate to be evaporated, the mask plate and the substrate to be evaporated need to be accurately aligned so that the organic material light emitting layer to be formed corresponds to the plurality of anodes in the anode layer.
For a silicon-based Micro display device (also called as a Si-OLED display device, or a Micro-OLED display device), the size of a pixel included in the silicon-based Micro display device is smaller, which is about one tenth of the pixel size of a conventional Low Temperature polysilicon Thin Film Transistor (LTPS-TFT) display device, so that when a wafer substrate of the silicon-based display device is subjected to evaporation, the required alignment precision is higher.
Some embodiments of the present disclosure provide a substrate alignment apparatus 100, as shown in fig. 1 to 5, the substrate alignment apparatus 100 includes: the mask adjusting device comprises a mask adjusting component 1, a substrate adjusting component 2, an infrared light source 3 and an image sensor 4.
The mask adjusting part 1 is used for bearing the mask 10 and adjusting the position of the mask 10, and the mask 10 is provided with a first alignment mark 101 with a hollow structure.
The substrate adjusting part 2 is used for bearing the substrate 20 to be aligned, adjusting the position of the substrate 20 to be aligned, the substrate 20 to be aligned is provided with a second alignment mark 201 with a hollow structure or a groove structure, and the orthographic projection of the first alignment mark 101 on the substrate 20 to be aligned can cover the second alignment mark 201. The substrate 20 to be aligned has a first side a and a second side B opposite to each other, and in the alignment process, the mask plate 10 is located on the first side a of the substrate 20 to be aligned.
It should be noted that, as shown in fig. 5, since the first alignment mark 101 is covered by the substrate 20 to be aligned, in order to show the relationship between the orthographic projection of the first alignment mark 101 and the second alignment mark 201, the first alignment mark 101 is shown in a dashed line.
The infrared light source 3 is configured to emit infrared light, and in the alignment process, the infrared light is incident from a side of the mask plate 10 away from the substrate 20 to be aligned, and is projected to the substrate 20 to be aligned through the first alignment mark 101.
The image sensor 4 is disposed on the second side B of the substrate 20 to be aligned, and is configured to acquire an image of the substrate 20 to be aligned.
In the alignment process, the substrate alignment apparatus 100 may align the mask plate 10 and the substrate 20 to be aligned by adjusting the position of the mask plate adjusting part 1 and/or the position of the substrate adjusting part 2. Here, the adjustment position includes a movement adjustment and a rotation adjustment. For example, in the alignment process, an alignment angle deviation occurs between the first alignment mark 101 and the second alignment mark 201, and at least one of the mask plate 10 and the substrate 20 to be aligned may be rotated to align the two.
In the process of aligning the mask plate 10 and the substrate 20 to be aligned by using the substrate aligning device 100, infrared light is incident from one side of the mask plate 10, which is far away from the substrate 20 to be aligned, the portion of the mask plate 10 except the first alignment mark 101 is made of a metal material, so that the infrared light can be prevented from penetrating through the mask plate, and the infrared light can penetrate through the hollowed first alignment mark 101 and be projected to the substrate 20 to be aligned on the other side. Referring to fig. 7 and 8, the substrate 20 to be aligned is made of a silicon wafer, the infrared light projected onto the substrate 20 to be aligned at least partially penetrates through the substrate 20 to be aligned, and an infrared projection 01 is formed on the surface of the second side B of the substrate 20 to be aligned, wherein the outline of the infrared projection 01 corresponds to the first alignment mark 101.
Adjusting the position of the substrate to be aligned and/or the mask plate to make at least part of the second alignment mark 201 in the range of the infrared projection 01, wherein the second alignment mark 201 is a hollow structure or a groove structure, and the thickness of the part of the substrate to be aligned 20 corresponding to the second alignment mark 201 is smaller than that of the part around the second alignment mark, so that the thickness through which infrared light passes is smaller and more infrared light passes is provided at the second alignment mark 201; and the part around the second alignment mark 201 needs to pass through a larger thickness and less infrared light, so that parts with different brightness are formed in the infrared projection 01. In this way, the image sensor 4 collects an image of the surface of the second side B of the substrate 20 to be aligned, and through the position relationship between the portions with different brightness in the infrared projection 01 in the collected image, the position deviation between the first alignment mark 101 and the second alignment mark 201 can be determined, and the relative position between the mask plate 10 and the substrate 20 to be aligned is adjusted accordingly, so that the second alignment mark 201 is completely located in the range of the infrared projection 01, and thus the mask plate 10 and the opaque substrate 20 to be aligned are accurately aligned.
It should be noted that, when the second alignment mark 201 is a hollow structure, or the second alignment mark 201 is a groove structure and the opening is located on the surface of the wafer substrate 20 that is not to be vapor-deposited, the image of the substrate 20 to be aligned acquired by the image sensor 4 includes: an image of infrared projection 01; and an image of an opening of the second alignment mark 201 on the surface of the substrate 20 to be aligned that is not to be vapor-deposited, that is, the opening is directly exposed within the image capturing range of the image sensor 4, so that the image of the opening can be directly captured by the image sensor 4. In this case, in addition to the above-described positional relationship between the portions with different brightness in the infrared projection 01, the positional deviation between the first alignment mark 101 and the second alignment mark 201 may be determined, and the positional deviation between the first alignment mark 101 and the second alignment mark 201 may also be determined by the images of the openings of the infrared projection 01 and the second alignment mark 201, which is not specifically limited herein.
Illustratively, referring to fig. 2, 6 and 7, the second alignment mark 201 is a groove structure having a depth D1The thickness of the substrate 20 to be aligned is D2，D2Greater than D1. The thickness of the infrared light passing through the second alignment mark 201 is D2-D1A thickness D required to pass through at a portion located around the second alignment mark 2012. The infrared projection 01 includes a first portion 011 and a second portion 012, the first portion 011 corresponds to the second alignment mark 201, the second portion 012 corresponds to a portion located around the second alignment mark 201, the first portion 011 is brighter, the second portion 012 is darker, thereby a positional deviation between the first alignment mark 101 and the second alignment mark 201 can be determined.
For example, referring to fig. 6, 8 and 9, the second alignment mark 201 is a hollow structure. The thickness of the infrared light passing through the second alignment mark 201 is 0, and the thickness of the infrared light passing through the portion around the second alignment mark 201 is D2. The infrared projection 01 includes a first portion 011 and a second portion 012, the first portion 011 corresponds to the second alignment mark 201, the second portion 012 corresponds to the portion around the second alignment mark 201, because the second alignment mark 201 is a hollow structure, the infrared light can pass through the second alignment mark 201, that is, the first portion 011 is no redThe outer projected portion, the second portion 012, is a portion where the infrared projection exists, and thus the positional deviation between the first and second alignment marks 101 and 201 can be determined.
Based on this, in some embodiments, the infrared light source 3 is disposed on the first side a of the substrate 20 to be aligned. In this case, the infrared light emitted from the infrared light source 3 may be directly projected onto the mask plate 10.
In other embodiments, referring to fig. 1 and 2, the infrared light source 3 is disposed on the second side B of the substrate 20 to be aligned. The substrate alignment apparatus 100 further includes a reflection component 5 disposed on a side of the mask plate 10 far away from the substrate 20 to be aligned, where the reflection component 5 is configured to reflect the infrared light emitted from the infrared light source 3 to the mask plate 10. That is, the infrared light emitted from the infrared light source 3 is indirectly projected onto the mask plate 10 by reflection by the reflection member 5.
In this way, the reflecting member 5 reflects the infrared light incident from the second side B of the substrate 20 to be aligned to the surface of the mask plate 10 away from the substrate 20 to be aligned, that is, the infrared light source 3 can be disposed on the non-evaporation side of the substrate 20 to be aligned, so that the infrared light source 3 does not affect the subsequent evaporation process.
Illustratively, referring to fig. 1 and 2, the reflective member 5 includes a first reflective surface F1And a second reflecting surface F2. First reflecting surface F1Opposite to the infrared source 3, a first reflecting surface F1For reflecting the infrared light emitted by the infrared light source 3 to the second reflecting surface F2. Second reflecting surface F2A second reflecting surface F opposite to the mask plate 102For reflecting the first reflecting surface F1The reflected infrared light is reflected to the mask 10.
Illustratively, the infrared light source 3 emits infrared light in the form of a first cylindrical infrared light beam that passes through the first reflecting surface F1And a second reflecting surface F2The infrared light irradiated to the mask plate 10 is a second columnar infrared light, and the first alignment mark 101 can be covered by the light column cross section of the second columnar infrared light.
In some embodiments, referring to FIG. 2, the first reflective surface F1And a second reflecting surface F2Between themThe angle is 90 degrees, and the incident direction of the infrared light emitted by the infrared light source 3 is vertical to the mask plate 10. Here, the incident direction of the infrared light emitted from the infrared light source 3 means that the infrared light is not reflected by the first reflecting surface F1Direction of incidence upon reflection. Thus, via the second reflecting surface F2The reflected infrared light is vertically projected to the mask plate 10, so that the infrared projection of the first alignment mark 101 on the substrate 20 to be aligned coincides with the orthographic projection of the first alignment mark on the substrate 20 to be aligned, thereby improving the accuracy of the determined position deviation between the first alignment mark 101 and the second alignment mark 201, and further improving the alignment accuracy between the mask plate 10 and the substrate 20 to be aligned.
Second reflecting surface F2For reflecting the first reflecting surface F1The reflected infrared light is reflected to the mask 10.
In some embodiments, referring to fig. 1, 5 and 6, the substrate alignment apparatus 100 further includes an adjustment control part 7 and a processor 6.
Wherein the processor 6 is coupled to the adjustment control component 7 and the image sensor 4, the processor 6 is configured to obtain an image of the substrate 20 to be aligned from the image sensor 4, analyze a position deviation between the first alignment mark 101 and the second alignment mark 201, such as the position deviation shown in fig. 6, and send an adjustment instruction to the adjustment control component 7 according to the position deviation.
The adjusting control component 7 is connected to the mask adjusting component 1 and the substrate adjusting component 2, and is configured to control the mask adjusting component 1 and/or the substrate adjusting component 2 to move according to the received adjusting instruction, so that an orthographic projection of the first alignment mark 101 on the substrate 20 to be aligned covers the second alignment mark 201 (see fig. 5).
For example, referring to fig. 6, the processor 6 obtains the center point O of the first alignment mark 101 in the image of the substrate 20 to be aligned according to the alignment information1Has the coordinates of (X)1，Y1) Center point O of second alignment mark 2012Has the coordinates of (X)2，Y2) And calculates the position deviation (X) between the first alignment mark 101 and the second alignment mark 2011-X2，Y1-Y2) And then the processor 6 is based on thisThe positional deviation is sent to the adjustment control unit 7 to be adjusted, for example, the adjustment control unit 1 is controlled to move the mask 10 in the direction of the substrate 20 to be aligned along the X axis by moving X along the X axis1-X2Moving Y along the Y axis1-Y2To center point O1And a center point O2And overlapping or approximately overlapping, so as to realize the alignment of the mask plate 10 and the substrate 20 to be aligned.
It should be noted that "coupled" may mean that two or more elements are in direct physical or electrical contact, and may mean that two or more elements are not in direct contact with each other but yet still co-operate or interact with each other (also may be referred to as communicatively coupled). The embodiments disclosed herein are not necessarily limited to the contents herein.
Further, it should be understood that the processor 6 may be a Central Processing Unit (CPU), other general purpose processor, a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), a Field Programmable Gate Array (FPGA) or other programmable logic device, discrete gate or transistor logic device, discrete hardware component, etc. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like.
In some embodiments, referring to fig. 1, 3 and 4, at least two first alignment marks 101 are disposed on the mask plate 10, and at least two second alignment marks 201 corresponding to the at least two first alignment marks 101 are disposed on the substrate 20 to be aligned. The substrate alignment apparatus 100 includes at least two sets of alignment units 110, each set of alignment units 110 includes: an infrared light source 3 and an image sensor 4, the at least two sets of alignment units 110 correspond to the at least two first alignment marks 101 one to one.
In this way, the substrate alignment apparatus 100 performs alignment by at least two sets of alignment marks (each set includes one first alignment mark 101 and one second alignment mark 201), so that the alignment accuracy can be improved.
For example, referring to fig. 3 to 5, two first alignment marks 101 are disposed on the mask plate 10 and are respectively disposed on two sides of a symmetry axis MN of the mask plate 10, and the two first alignment marks 101 are disposed along a direction perpendicular to the symmetry axis MN and have equal distances from the symmetry axis MN; the substrate 20 to be aligned is provided with two second alignment marks 201 respectively disposed on two sides of the symmetry axis PQ of the mask 10, and the two first alignment marks 101 are disposed along a direction perpendicular to the symmetry axis PQ and have the same distance from the symmetry axis PQ.
Some embodiments of the present disclosure further provide an evaporation apparatus 1000, referring to fig. 1, including the substrate alignment apparatus 100 in any of the embodiments described above, further including: the evaporation system comprises a cavity 200, an evaporation source 300 and a film thickness detection device 400. The evaporation source 300 and the film thickness detection device 400 are both disposed in the chamber 200, the evaporation source 300 is used for heating a material to be evaporated, so that the evaporation material is evaporated and deposited on a substrate to be evaporated, and here, the substrate 20 to be aligned serves as the substrate to be evaporated; the film thickness detection device 400 is used for monitoring the deposition rate of the evaporation material deposited on the substrate to be evaporated. For example, the deposition rate may be given by
Figure BDA0002331903720000101
In the vapor deposition process, the inside of the chamber 200 is in a vacuum state.
In some embodiments, referring to fig. 1, the adjustment control component 7 of the substrate alignment apparatus 100 includes an upper substrate and a lower substrate, the lower substrate is connected to an outer wall of the cavity 200 of the evaporation apparatus 1000, a hollow area is disposed on the lower substrate, and one end of each of the mask plate adjustment component 1 and the substrate adjustment component 2 is movably connected to the upper substrate of the adjustment control component 7 through the hollow area, that is, the mask plate adjustment component 1 and the substrate adjustment component 2 are movable relative to the upper substrate, so as to adjust the position of the mask plate 10 and/or the substrate 20 to be aligned.
Some examples of the present disclosure also provide a mask plate 10, referring to fig. 3, where the mask plate 10 is applied to the substrate alignment apparatus 100 in any one of the embodiments described above. The mask plate 10 includes: the mask comprises a mask body 102 and a first alignment mark 101 which is arranged on the mask body 102 and is hollow. Wherein the first alignment mark 101 includes a graphic part1011 and a plurality of first alignment reference portions 1012, said plurality of first alignment reference portions 1012 being located around the graphic portion 1011. The dimension L of the figure portion 1011 in the direction perpendicular to the width extending direction of each first alignment reference part 10122Is greater than the dimension L of the first alignment reference portion 10121。
The mask 10 can also achieve the effect of accurately aligning the opaque substrate 20 to be aligned, which is described in detail in some embodiments of the substrate alignment apparatus 100 and will not be described herein again.
In addition, in the alignment process, the range of the infrared projection of the pattern portion 1011 on the substrate 20 to be aligned is large, which is beneficial to exposing the second alignment mark 201 on the substrate 20 to be aligned, and is convenient for determining the position of the second alignment mark. The plurality of first alignment reference portions 1012 are used to provide a reference for alignment with the second alignment mark 201, which facilitates accurate alignment of the mask plate 10 and the substrate 20 to be aligned.
Illustratively, referring to fig. 3, at least two first alignment reference portions 1012 of the plurality of first alignment reference portions 1012 extend in a direction perpendicular to each other. For example, in fig. 3, the length extension directions of the four first alignment reference portions 1012 are oa and ob, and oa is perpendicular to ob.
In this case, the vertical length extending direction may be used as a coordinate axis, and the coordinate axis may be used as a reference system to adjust the relative position of the mask 10 and/or the substrate 20 to be aligned, so as to facilitate the alignment of the two.
Illustratively, the shape of the figure portion 1011 is at least one of a circle, an ellipse, a rectangle, or a regular polygon, for example, referring to fig. 10, the shape of the figure portion 1011 is a square. The plurality of first alignment reference parts 1012 are arranged at equal intervals along the edge of the figure part 1011.
Some embodiments of the present disclosure further provide a wafer substrate 20, referring to fig. 4 and 5, the wafer substrate 20 is applied to the substrate alignment apparatus 100 in any embodiment as described above, and the wafer substrate 20 is matched with the mask plate 10 in any embodiment as described above, that is, the wafer substrate 20 is used as a substrate to be aligned. The wafer substrate 20 includes a wafer substrate main body 202 and a second alignment mark 201 disposed on the wafer substrate main body 202. The second alignment mark 201 is a hollow structure or a groove structure, and the second alignment mark 201 can be covered by the orthographic projection of the first alignment mark 101 of the mask plate 10 on the wafer substrate 20.
The wafer substrate 20 can also achieve the effect of accurate alignment with the mask plate 10, which is described in detail in some embodiments of the substrate alignment apparatus 100 and will not be described herein again.
Based on this, in some embodiments, referring to fig. 2, the second alignment mark 201 is a groove structure. Thus, when the surface of the second side B of the substrate 20 to be aligned is subjected to image acquisition by the image sensor 4, direct projection to the image sensor 4 due to infrared light directly passing through the second alignment mark 201 can be avoided, so that halation of the acquired image is avoided, the accuracy of the determined position deviation between the first alignment mark 101 and the second alignment mark 201 is improved, and the accuracy of alignment is improved.
Illustratively, the openings of the groove structure are located on the surface of the wafer substrate 20 that is not to be evaporated. Like this, in the subsequent cleaning process before treating the evaporation plating surface to wafer substrate 20 and evaporating, because the opening of groove structure is located the surface of wafer substrate 20 that does not treat the evaporation plating, consequently can avoid appearing in the cleaning process: the inner wall of the groove reacts with cleaning substances or cleaning tools and the like to generate byproducts; the by-product produced in the cleaning process is deposited in the groove structure, so that the influence of the by-product on the subsequent evaporation process can be avoided.
Illustratively, the infrared light source 3 emits infrared light having a wavelength ranging from 0.76 μm to 50 μm.
Illustratively, the thickness D of the wafer substrate body 2022Is a groove structure depth D 12 to 100 times, e.g., the thickness D of the wafer substrate 202Can be 200-1000 μm, and the depth D of the groove structure1Can be 10 to 100 μm.
In some embodiments, referring to fig. 3 to 5, the second alignment mark 201 includes a plurality of second alignment reference portions 2011, and in the case that the first alignment mark 101 includes the pattern portion 1011 and the plurality of first alignment reference portions 1012, the orthographic projections of the plurality of first alignment reference portions 1012 on the wafer substrate 20 can be directed to the plurality of second alignment reference portions 2011 in a one-to-one correspondence. In this way, in the alignment process, the orthographic projections of the first alignment reference portions 1012 on the wafer substrate 20 are made to face the second alignment reference portions 2011 in a one-to-one correspondence manner, so that the mask plate 10 and the wafer substrate 20 are accurately aligned.
Illustratively, referring to FIGS. 3 and 4, the width W of the first alignment reference portion 10121Is the width W of its corresponding second registration reference portion 201123 to 5 times the width W of the first alignment reference part 10121Is in a range of 30 μm to 100 μm, and corresponds to the width W of the second alignment reference part 20112The value range of (A) is 8-30 μm.
For example, the width W of the first alignment reference portion 1012135 μm, corresponding to the width W of the second alignment reference part 20112Is 10 μm.
In some embodiments, referring to fig. 4, the second alignment mark 201 is a cross-shaped mark having four second alignment fiducial portions 2011. Referring to fig. 3, the first alignment mark 101 corresponding to the second alignment mark 201 has a circular figure portion 1011 and four first alignment reference portions 1012. The four first alignment reference portions 1012 and the circular figure portion 1011 constitute a shaped cross mark, where the "shaped cross mark" refers to a cross mark modified from a standard cross mark (e.g., the second alignment mark 201 in fig. 4), which remains generally a cross mark as a whole.
Some embodiments of the present disclosure further provide a substrate alignment method applied to the substrate alignment apparatus 100 in any of the embodiments described above. Referring to fig. 1, 2, 5 and 11, the substrate alignment method includes the steps of:
s10, emitting infrared light by the infrared light source, so that the infrared light is incident from a side of the mask plate 10 away from the substrate 20 to be aligned, and is projected to the substrate 20 to be aligned through the first alignment mark 101 of the mask plate 10.
S20, capturing an image of the substrate 20 to be aligned from the second side B of the substrate 20 to be aligned using the image sensor 4.
S30, analyzing the acquired image to determine the position deviation between the first alignment mark 101 and the second alignment mark 201.
And S40, adjusting the position of the mask plate 10 and/or the substrate 20 to be aligned according to the determined position deviation, so that the orthographic projection of the first alignment mark 101 on the substrate 20 to be aligned covers the second alignment mark 201.
It should be noted that, when the second alignment mark 201 is a hollow structure, or the second alignment mark 201 is a groove structure and the opening is located on the surface of the wafer substrate 20 that is not to be vapor deposited, the image of the substrate 20 to be aligned acquired in S20 includes: an image of infrared projection 01 as shown in fig. 7 or fig. 9; and an image of an opening of the second alignment mark 201 on the surface of the wafer substrate 20 not to be evaporated, that is, the opening is directly exposed in the image capturing range of the image sensor 4, so that the image of the opening can be directly captured by the image sensor 4. In this case, the positional deviation between the first alignment mark 101 and the second alignment mark 201 can be determined by the positional relationship between the portions of the infrared projection 01 that differ in brightness; the position deviation between the first alignment mark 101 and the second alignment mark 201 can also be determined by the infrared projection 01 and the image of the opening of the second alignment mark 201, which is not limited herein.
The substrate alignment method can also achieve accurate alignment between the mask plate 10 and the opaque substrate 20 to be aligned, and since the effect is described in detail in some embodiments of the substrate alignment apparatus 100, no further description is given here.
Illustratively, before S10, the method further includes: and pre-aligning the mask plate 10 and the substrate 20 to be aligned. For example, referring to fig. 6, according to the position coordinates of the first alignment mark 101 and the second alignment mark 201, the second alignment mark 201 is at least partially within the range of the orthographic projection of the first alignment mark 101 on the substrate 20 to be aligned. Therefore, the mask plate 10 and the substrate 20 to be aligned are aligned conveniently, and the alignment efficiency is improved.
The wafer substrate in some embodiments of the present disclosure may be used in any product or component having a display function, such as a display panel, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, and a navigator. For example, the present invention is applicable to VR (Virtual Reality)/AR (Augmented Reality) near-eye display devices such as a head mounted display and a stereoscopic display mirror, and is not particularly limited herein.
The above description is only for the specific embodiments of the present disclosure, but the scope of the present disclosure is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present disclosure should be covered within the scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.

Claims (13)

1. A substrate alignment apparatus, comprising:
the mask plate adjusting part is used for bearing a mask plate and adjusting the position of the mask plate; a first alignment mark with a hollow structure is arranged on the mask plate;
the substrate adjusting part is used for bearing a substrate to be aligned and adjusting the position of the substrate to be aligned; a second alignment mark with a hollow structure or a groove structure is arranged on the substrate to be aligned, and the second alignment mark can be covered by the orthographic projection of the first alignment mark on the substrate to be aligned; the substrate to be aligned is provided with a first side and a second side which are opposite, and the mask plate is positioned on the first side of the substrate to be aligned in the alignment process;
an infrared light source for emitting infrared light; in the alignment process, the infrared light is incident from one side of the mask plate, which is far away from the substrate to be aligned, and is projected to the substrate to be aligned through the first alignment mark;
and the image sensor is arranged on the second side of the substrate to be aligned and used for acquiring the image of the substrate to be aligned.
2. The apparatus according to claim 1, wherein the infrared light source is disposed on a second side of the substrate to be aligned;
the substrate alignment device further comprises a reflection component arranged on one side of the mask plate, which is far away from the substrate to be aligned, and the reflection component is used for reflecting infrared light emitted by the infrared light source to the mask plate.
3. The substrate alignment device of claim 2, wherein the reflective member includes a first reflective surface and a second reflective surface;
the first reflecting surface is opposite to the infrared light source and used for reflecting infrared light emitted by the infrared light source to the second reflecting surface;
the second reflecting surface is opposite to the mask plate, and the second reflecting surface is used for reflecting the infrared light reflected by the first reflecting surface to the mask plate.
4. The apparatus of claim 1, wherein the infrared light source is disposed on a first side of the substrate to be aligned.
5. The substrate alignment apparatus according to any one of claims 1 to 4, further comprising a regulation control part and a processor;
the processor is coupled with the adjustment control component and the image sensor, and is configured to acquire an image of the substrate to be aligned from the image sensor, analyze a position deviation between the first alignment mark and the second alignment mark, and send an adjustment instruction to the adjustment control component according to the position deviation;
the adjusting control component is connected with the mask plate adjusting component and the substrate adjusting component and used for controlling the mask plate adjusting component and/or the substrate adjusting component to move according to the received adjusting instruction, so that the orthographic projection of the first alignment mark on the substrate to be aligned covers the second alignment mark.
6. The substrate alignment device according to any one of claims 1 to 4, wherein at least two first alignment marks are disposed on the mask plate, and at least two second alignment marks corresponding to the at least two first alignment marks are disposed on the substrate to be aligned;
the base plate aligning device comprises at least two groups of aligning units, and each group of aligning units comprises: one said infrared light source and one said image sensor; the at least two groups of alignment units correspond to the at least two first alignment marks one by one.
7. A mask plate is characterized by being applied to the substrate alignment device of any one of claims 1 to 6; the mask plate includes:
a mask plate main body;
the first hollow alignment mark is arranged on the mask plate main body; the first alignment mark comprises a graph part and a plurality of first alignment reference parts, and the plurality of first alignment reference parts are positioned around the graph part; the dimension of the pattern portion is larger than that of each first alignment reference portion in a direction perpendicular to a width extending direction of the first alignment reference portion.
8. A mask plate according to claim 7, wherein the length extension directions of at least two first alignment reference portions in the plurality of first alignment reference portions are perpendicular to each other.
9. A mask according to claim 7 or 8, wherein the pattern portion has at least one of a circular, elliptical, rectangular or regular polygonal shape;
the plurality of first alignment reference parts are arranged at equal intervals along an edge of the pattern part.
10. A wafer substrate, which is applied to the substrate alignment device as claimed in any one of claims 1 to 6 and is matched with the mask plate as claimed in any one of claims 7 to 9 for use; the wafer substrate includes:
a wafer substrate body;
a second alignment mark arranged on the wafer substrate main body, wherein the second alignment mark is a hollow structure or a groove structure; the orthographic projection of the first alignment mark of the mask plate on the wafer substrate can cover the second alignment mark.
11. The wafer substrate according to claim 10, wherein the second alignment mark is a groove structure, and an opening of the groove structure is located on a surface of the wafer substrate that is not to be evaporated;
the thickness of the wafer substrate main body is 2-100 times of the depth of the groove structure.
12. The wafer substrate according to claim 10 or 11, wherein the second alignment mark comprises a plurality of second alignment reference portions;
in a case where the first alignment mark includes a pattern portion and a plurality of first alignment reference portions, orthographic projections of the plurality of first alignment reference portions on the wafer substrate can be directed to the plurality of second alignment reference portions in a one-to-one correspondence.
13. A substrate alignment method, which is applied to the substrate alignment apparatus according to any one of claims 1 to 6; the substrate alignment method comprises the following steps:
emitting infrared light by using an infrared light source, so that the infrared light is incident from one side of a mask plate, which is far away from a substrate to be aligned, and is projected to the substrate to be aligned through a first alignment mark of the mask plate;
acquiring an image of the substrate to be aligned from a second side of the substrate to be aligned by using an image sensor;
analyzing the image to determine a positional deviation between the first alignment mark and the second alignment mark;
and adjusting the position of the mask plate and/or the substrate to be aligned according to the position deviation, so that the orthographic projection of the first alignment mark on the substrate to be aligned covers the second alignment mark.
CN201911342679.1A 2019-12-23 2019-12-23 Substrate alignment device and method, mask plate and wafer substrate Pending CN113097422A (en)

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