KR20140035808A - Film forming device - Google Patents

Film forming device Download PDF

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KR20140035808A
KR20140035808A KR1020130092958A KR20130092958A KR20140035808A KR 20140035808 A KR20140035808 A KR 20140035808A KR 1020130092958 A KR1020130092958 A KR 1020130092958A KR 20130092958 A KR20130092958 A KR 20130092958A KR 20140035808 A KR20140035808 A KR 20140035808A
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South Korea
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evaporation source
film
substrate
heat
reflection
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KR1020130092958A
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Korean (ko)
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데쯔야 다께이
이오리 즈시
노보루 가또
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가부시키가이샤 히다치 하이테크놀로지즈
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Publication of KR20140035808A publication Critical patent/KR20140035808A/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Abstract

The present invention provides a deposition device and a deposition method thereof capable of stably controlling an evaporation rate and making films having the constant thickness by constantly maintaining real deposition rate during the deposition of a film formed substrate. A film forming device comprises: a substrate holding and supporting tool for holding and supporting the film formed substrate; an evaporation source positioned at a position facing the film formed substrate to deposit film forming materials on the film formed substrate; and an evaporation source moving tool for moving the evaporation source relative to the film formed substrate. A standby position for controlling the amount of the film forming materials evaporated from the evaporation source is positioned on a path on which the evaporation source is moved by the evaporation source moving tool. A reflection heat preventing member for preventing reflection heat radiated from an adhesion preventing member is arranged on the surface of the adhesion preventing member installed in front of the standby position.

Description

성막 장치{FILM FORMING DEVICE}FIELD FORMING DEVICE

본 발명은 증착에 의해 박막을 형성하는 성막 장치에 관한 것으로, 특히 유기 EL 소자를 구성하는 유기 EL 막이나 금속 전극 막의 성막에 적합한 성막 장치에 관한 것이다.The present invention relates to a film forming apparatus for forming a thin film by vapor deposition, and more particularly, to a film forming apparatus suitable for forming an organic EL film or a metal electrode film constituting an organic EL element.

증착에 의해 성막을 행하는 성막 장치는, 증착을 행하는 재료를 가열하여 당해 재료의 증기를 발생시키는 증발원과, 상기 증발원으로부터의 증기에 의해 성막을 행하는 기판을 보유 지지하는 기판 보유 지지 기구를 수용하는 증착 챔버를 구비한다. 증착 챔버는, 성막 효율을 높이기 위해서, 저압 분위기(일반적으로 진공 분위기라고 함)로 유지된다. 성막을 행하는 기판은 반도체 웨이퍼 등 작은 기판인 경우, 위치를 고정한 증발원에 의해 성막을 행해도, 기판상의 막 두께의 균일성을 어느 정도 유지할 수 있다.A film forming apparatus for forming a film by vapor deposition includes a vapor deposition source for heating a vapor deposition material to generate vapor of the material and a substrate holding mechanism for holding a substrate for film formation by vapor from the vaporization source. With a chamber. The vapor deposition chamber is maintained in a low pressure atmosphere (generally called a vacuum atmosphere) in order to increase the film formation efficiency. In the case where the substrate to be formed is a small substrate such as a semiconductor wafer, even if the film is formed by a fixed evaporation source, the uniformity of the film thickness on the substrate can be maintained to some extent.

그러나, 대면적 표시 패널용의 기판, 예를 들어 1m×1m의 기판에 대하여 성막을 행하는 경우에는, 1개의 증발원만으로는 막 두께의 균일성을 유지할 수 없으므로, 복수의 증발원을 배열하여 사용하거나, 증발원을 기판에 대하여 상대 이동시키거나 함으로써, 막 두께의 균일성을 얻고 있다.However, in the case of forming a film on a substrate for a large area display panel, for example, a substrate of 1 m × 1 m, the uniformity of the film thickness cannot be maintained by only one evaporation source. Thus, a plurality of evaporation sources may be arranged or used. The uniformity of the film thickness is obtained by moving relative to the substrate.

증발원을 기판에 대하여 상대 이동시키는 경우, 통상, 증발원으로부터의 증기의 발생 레이트가 일정해지도록 조정하기 위한, 증발원의 대기 위치를 설정한다. 이 대기 위치에서 증발원의 증발 레이트가 소정값으로 된 것을 확인한 후, 증발원을 기판 방향으로 이동시켜 기판에의 성막을 개시한다. 특허 문헌 1에서는, 증발원의 복사열 손실이, 대기 위치와 기판 위치에서 다름으로써, 양자의 증발 레이트가 변동하는 것을 발견하고, 복사열 손실을 양자에서 동등하게 해야 한다는 견해가 개시되어 있다.When the evaporation source is moved relative to the substrate, the atmospheric position of the evaporation source is usually set to adjust so that the generation rate of steam from the evaporation source is constant. After confirming that the evaporation rate of the evaporation source has reached a predetermined value at this standby position, the evaporation source is moved in the direction of the substrate to start film formation on the substrate. Patent Literature 1 discloses that the radiation heat loss of the evaporation source is different from the standby position and the substrate position, so that the evaporation rate of both fluctuates and the radiation heat loss should be equalized in both.

일본 특허 출원 공개 제2005-325425호 공보Japanese Patent Application Laid-Open No. 2005-325425

특허 문헌 1에서는, 증발원의 증기 방출 부분 근방의 복사열 손실을 대기시와 성막시에 있어서 동등하게 하기 위해서, 마스크(기판의 증발원측에 설치하고, 소정 위치에만 성막을 행하기 위한 섀도우 마스크)와 동등한 복사율의 재료로 이루어지는 방착 부재를 마스크와 거의 같은 높이에 배치하는 것이 개시되어 있다.In Patent Literature 1, in order to make the radiation heat loss near the vapor discharge portion of the evaporation source equal in the atmosphere and the film formation at the time of film formation, it is equivalent to a mask (a shadow mask provided on the evaporation source side of the substrate and forming a film only at a predetermined position). It is disclosed to arrange an anti-stick member made of a material having an emissivity at about the same height as a mask.

그러나, 방착 부재를 마스크와 거의 같은 높이에 배치하는 것은, 증착 챔버내의 스페이스의 문제로 실현이 어려운 경우가 있다. 또한, 마스크와 동등한 복사율의 재료로서, 마스크와 같은 인바르(invar)재를 사용하는 것이 제안되어 있지만, 이 재료는 고가여서, 방착 부재의 재료로서 사용하는 것은 현실적으로는 어렵다.However, disposing the adhesion member at approximately the same height as the mask may be difficult to realize due to a problem of space in the deposition chamber. In addition, although it is proposed to use an invar material such as a mask as a material having an emissivity equivalent to that of a mask, this material is expensive, and it is practically difficult to use it as a material of an adhesion member.

본 발명의 목적은, 방착 부재의 재료나 위치에 관계없이, 대기시와 성막시에 있어서, 동등한 증착 레이트를 유지할 수 있는 성막 장치를 제공하는 것에 있다.An object of the present invention is to provide a film forming apparatus capable of maintaining an equivalent deposition rate in air and film forming, regardless of the material or position of the adhesion member.

상기 과제를 해결하기 위한 본 발명의 구성은 이하와 같다.The structure of the present invention for solving the above problems is as follows.

피성막 기판을 보유 지지하는 기판 보유 지지 기구와, 상기 피성막 기판과 대향하는 위치에 설치되어 상기 피성막 기판에 증착하는 증발원과, 상기 증발원을 상기 피성막 기판에 대하여 상대 이동시키는 증발원 이동 기구를 구비한 성막 장치에 있어서, 상기 증발원 이동 기구가 상기 증발원을 이동시키는 궤적 상에 상기 증발원으로부터 증발하는 성막 재료의 양을 제어하는 대기 위치를 갖고, 상기 대기 위치의 전방에 설치된 방착 부재의 표면에 상기 방착 부재로부터 복사되는 반사열을 억제하는 반사열 억제 부재를 구비한 것이다.A substrate holding mechanism for holding a film substrate, an evaporation source provided at a position opposite to the film substrate and being deposited on the film substrate, and an evaporation source moving mechanism for relatively moving the evaporation source with respect to the film substrate. In the film forming apparatus provided, the evaporation source moving mechanism has a standby position for controlling the amount of the film forming material evaporated from the evaporation source on a trajectory for moving the evaporation source, and is provided on the surface of the adhesion member provided in front of the standby position. It is provided with the reflection heat suppression member which suppresses the reflection heat radiated | emitted from an adhesion member.

또한, 본 발명의 성막 장치는, 기재 상에 막을 형성하는 성막 장치라면, 적용할 수 있는데, 특히 성막원이 열을 발하는 것, 증착 장치, 스퍼터링 장치, 열 CVD 장치 등에 적용되는 것이 적합하다.Further, the film forming apparatus of the present invention can be applied as long as it is a film forming apparatus for forming a film on a substrate. Particularly, the film forming apparatus generates heat, a vapor deposition apparatus, a sputtering apparatus, a thermal CVD apparatus, and the like.

본 발명에 따르면, 증발 레이트의 제어의 안정화를 도모하고, 피성막 기판에의 증착 중의 실제의 증착 레이트를 일정하게 유지함으로써 막 두께의 균일성을 얻는 것이 가능한 증착 장치 및 그 증착 방법을 제공할 수 있다.According to the present invention, it is possible to provide a vapor deposition apparatus and a vapor deposition method capable of stabilizing control of the evaporation rate and obtaining uniformity in film thickness by maintaining a constant vapor deposition rate during deposition on a film-forming substrate. have.

도 1은 본 발명의 실시예에 관한 증착 장치의 개략 구성도이다.
도 2는 본 발명의 제1 실시예에 관한 반사열 억제 부재의 부분 단면도이다.
도 3은 본 발명의 제1 실시예에 관한 반사열 억제 부재의 사시도이다.
도 4는 본 발명의 제2 실시예에 관한 반사열 억제 부재의 사시도이다.
도 5는 본 발명의 제3 실시예에 관한 반사열 억제 부재의 사시도이다.
도 6은 본 발명의 제3 실시예에 관한 반사열 억제 부재의 부분 단면도이다.
도 7은 본 발명의 제4 실시예에 관한 반사열 억제 부재의 사시도이다.
도 8은 본 발명의 제4 실시예에 관한 반사열 억제 부재의 부분 단면도이다.1 is a schematic configuration diagram of a vapor deposition apparatus according to an embodiment of the present invention.
2 is a partial cross-sectional view of the reflection heat suppressing member according to the first embodiment of the present invention.
3 is a perspective view of a reflection heat suppressing member according to the first embodiment of the present invention.
4 is a perspective view of a reflection heat suppressing member according to a second embodiment of the present invention.
5 is a perspective view of a reflection heat suppressing member according to a third embodiment of the present invention.
6 is a partial cross-sectional view of the reflection heat suppressing member according to the third embodiment of the present invention.
7 is a perspective view of a reflection heat suppressing member according to a fourth embodiment of the present invention.
8 is a partial cross-sectional view of the reflection heat suppressing member according to the fourth embodiment of the present invention.

이하, 실시예에 따라, 도면 등에 의해 설명한다. 이하의 설명문은 본원 발명의 내용의 구체예를 나타내는 것이며, 본원 발명이 이들의 설명에 한정되는 것이 아니다. 따라서, 본 명세서에 개시되는 기술적 사상의 범위 내에 있어서 당업자에 의한 여러가지 변경 및 수정이 가능하다.Hereinafter, according to an Example, it demonstrates by drawing. The following description shows the specific example of the content of this invention, and this invention is not limited to these description. Accordingly, various changes and modifications by those skilled in the art are possible within the scope of the technical idea disclosed herein.

[제1 실시예][First Embodiment]

본 발명의 구체적인 일 실시예에 대해서 도면에 기초해서 설명한다.EMBODIMENT OF THE INVENTION The specific Example of this invention is described based on drawing.

도 1은 본 발명의 실시예에 관한 증착 장치의 개략 구성도이다.1 is a schematic configuration diagram of a vapor deposition apparatus according to an embodiment of the present invention.

도 1에 있어서, 진공 챔버(1) 내에는 증발원(2)이 설치되어 있다. 이 증발원(2)에 충전된 성막 재료를 히터(도시 생략)로 가열하여 증발시키게 되어 있다. 증발에 의해 발생하는 증발 입자(2a)를 증발원(2)에 대향하는 기판 보유 지지 기구(3)에 보유 지지된 피성막 기판(4)에 부착시켜서 형성하는 것이다.In FIG. 1, an evaporation source 2 is provided in the vacuum chamber 1. The film-forming material filled in the evaporation source 2 is heated by a heater (not shown) to evaporate. The evaporated particles 2a generated by evaporation are formed by being attached to the film formation substrate 4 held by the substrate holding mechanism 3 facing the evaporation source 2.

증발 입자(2a)를 피성막 기판(4)에 부착시킬 때는, 증발원(2)을 대기 위치(도 1의 실선으로 나타내는 위치)로부터 피성막 기판(4)의 대향면의 적어도 중앙부(도 1의 점선으로 나타내는 위치)로 막 두께 센서(5)와 함께 이동(화살표 방향) 하도록 되어 있다. 증발원(2)은 좌측 방향 및 우측 방향으로 동작하는 것이 가능하며, 대기 위치로 되돌아온 후, 막 두께 센서(5)에 의해 검출된 소정의 값으로 안정될 때까지 증발 레이트의 온도 제어를 행한다.When attaching the evaporated particles 2a to the film formation substrate 4, the evaporation source 2 is attached to the film formation substrate 4 from at least the center portion of the opposite surface of the film formation substrate 4 from the standby position (the position indicated by the solid line in Fig. 1). The position (indicated by a dotted line) is moved (arrow direction) together with the film thickness sensor 5. The evaporation source 2 can operate in the left direction and the right direction, and after returning to the standby position, temperature control of the evaporation rate is performed until it stabilizes at a predetermined value detected by the film thickness sensor 5.

또한, 증발원(2)에서의 히터에 의한 성막 재료의 가열은 중앙부(도 1에서 점선으로 나타내는 위치)이어도 대기 위치이어도 항상 가열되어 있기 때문에, 증발 입자(2a)는 항상 계속해서 비산하고 있다.In addition, since the heating of the film-forming material by the heater in the evaporation source 2 is always heated even in the center part (the position shown by the dotted line in FIG. 1) or the standby position, the evaporation particles 2a are always scattered continuously.

또한, 증발 입자의 열에너지를 저하시킴으로써 튀어 오르기를 억제하기 위해서 도 1에 나타낸 바와 같이 방착 부재(6)의 배면에는 냉각 기구(8)가 설치되어 있다. 이 냉각 기구(8)는, 소위 수냉 장치이며 방착 부재(6)의 배면에 냉각수가 순환하는 배관을 열적으로 접속시켜 구성되어 있다.In addition, in order to suppress jumping by lowering the thermal energy of the evaporated particles, as shown in FIG. 1, a cooling mechanism 8 is provided on the rear surface of the adhesion member 6. This cooling mechanism 8 is a so-called water cooling device, and is configured by thermally connecting a pipe through which cooling water circulates to the back surface of the anti-sticking member 6.

그런데, 대기 위치에 있어서, 증발원(2)으로부터의 증발 입자(2a)가 피성막 기판(4)에 도착 혹은 부착될 수 없었던 증발 입자(2a)를 포착하기 위해서 피성막 기판(4)의 주변에는 상술한 방착 부재(6)가 대향하여 설치되어 있다.By the way, in the stand-by position, in order to capture the evaporated particles 2a which could not arrive or adhere to the film-forming substrate 4 from the evaporation source 2, in the periphery of the film-forming substrate 4. The anti-glare member 6 described above is provided to face each other.

도 1에 나타낸 바와 같이 증착원(2)의 대기 위치로부터 방착 부재(6)까지의 거리는 피성막 기판(4)까지의 거리와 비교하면 훨씬 가깝다. 그 때문에 대기 위치에 있는 증발원(2)은, 방착 부재(6)로부터의 반사열에 의해 영향을 받는다. 또한, 증착원(2)에는, 증발원(2)과 일체로 이동하는 막 두께 센서(5)가 설치되어 있지만, 방착 부재(6)로부터의 반사열은, 이 막 두께 센서(5)에도 영향을 미친다.As shown in FIG. 1, the distance from the standby position of the vapor deposition source 2 to the adhesion member 6 is much closer than the distance to the film formation substrate 4. Therefore, the evaporation source 2 in the standby position is affected by the heat of reflection from the adhesion member 6. In addition, although the film thickness sensor 5 which moves integrally with the evaporation source 2 is provided in the vapor deposition source 2, the heat of reflection from the adhesion member 6 affects this film thickness sensor 5, too. .

즉, 막 두께 센서(5)는, 수정 진동자의 표면에 형성되는 증착 재료의 양에 의해, 공진 주파수가 변하는 현상을 이용해서 측정하는 것이 일반적이지만, 이 공진 주파수가, 온도에 의해 어긋나는 현상이 발생한다. 방착 부재(6)로부터의 반사열의 영향에 의해, 막 두께 센서(5)가, 실제의 막 두께와 다른 막 두께로서 측정해버리면, 그것을 보정하기 위해서, 증발원의 히터 온도를 잘못된 방향으로 조정해버리므로, 결과적으로, 소정의 증발 레이트로의 성막을 할 수 없게 될 우려가 있다.That is, the film thickness sensor 5 is generally measured by using a phenomenon in which the resonance frequency is changed by the amount of deposition material formed on the surface of the crystal oscillator, but this phenomenon occurs in which the resonance frequency is shifted by temperature. do. If the film thickness sensor 5 measures the film thickness different from the actual film thickness under the influence of the heat of reflection from the adhesion member 6, in order to correct it, the heater temperature of the evaporation source is adjusted in the wrong direction. As a result, there is a possibility that the film formation at a predetermined evaporation rate may not be possible.

즉, 대기 위치에서 증발 레이트를 제어했다고 해도, 성막시의 증발 레이트가 소정값과 다를 가능성이 있다.That is, even if the evaporation rate is controlled at the standby position, there is a possibility that the evaporation rate at the time of film formation is different from the predetermined value.

그 때문에 본 실시예에서는, 이 방착 부재(6)에 피성막 기판(4)의 주변의 적어도 일부에, 증착원으로부터 방사되는 열의 반사를 억제하는 반사열 억제 부재(7)를 설치한 것이다.Therefore, in this embodiment, the anti-reflection member 7 is provided on the anti-sticking member 6 in at least a part of the periphery of the film-forming substrate 4 to suppress the reflection of heat radiated from the vapor deposition source.

이하, 반사열 억제 부재(7)의 상세를 도 2, 도 3을 사용해서 설명한다.Hereinafter, the detail of the reflection heat suppressing member 7 is demonstrated using FIG. 2, FIG.

도 2는 본 발명의 제1 실시예에 관한 반사열 억제 부재의 부분 단면도이다.2 is a partial cross-sectional view of the reflection heat suppressing member according to the first embodiment of the present invention.

도 3은 본 발명의 제1 실시예에 관한 반사열 억제 부재의 사시도이다.3 is a perspective view of a reflection heat suppressing member according to the first embodiment of the present invention.

도 2에 있어서, 방착 부재(6) 상의 반사열 억제 부재(7)는 알루미늄 혹은 스테인리스판에 복수의 칼집을 내고, 이 칼집이 내어진 부분을 일으킴으로써 날개판 부재(7a)(루버라고도 함)로 한 것이다. 이 날개판 부재(7a)는 약 10㎜ 정도로 상승되어 약 45도로 경사져 있다.In FIG. 2, the reflection heat suppressing member 7 on the adhesion member 6 is made into a wing plate member 7a (also referred to as louver) by making a plurality of sheaths on an aluminum or stainless steel plate, and causing a portion where the sheaths are cut out. It is. This wing plate member 7a is raised about 10 mm and inclined at about 45 degrees.

도 2에 화살표로 나타내는 증발원(2)으로부터의 열선(2b)과 같이, 반사열 억제 부재(7)에 대하여 대략 수직 방향으로 열선(2b)이 조사되면, 열선(2b)은 복수의 날개판 부재(7a)에 충돌한다. 날개판 부재(7a)에 충돌한 열선(2b)은 직각 방향으로 굴절하거나, 날개판 부재(7a)의 경사를 따라 흐르거나 한다.Like the heating wire 2b from the evaporation source 2 indicated by the arrow in FIG. 2, when the heating wire 2b is irradiated in a substantially vertical direction with respect to the reflective heat suppressing member 7, the heating wire 2b is a plurality of wing plate members ( 7a). The hot wire 2b collided with the blade plate member 7a is refracted in a right angle direction or flows along the inclination of the blade plate member 7a.

그 때문에 방착 부재(6)로부터 증발원으로의 반사열은 날개 부재가 없는 경우에 비해 대폭으로 저감시킬 수 있다. 또한, 방착 부재(6)로부터 방사되는 열로서는, 반사열 이외에, 복사열과, 증착 입자가 있다. 전자는 열원과 열이 전해지는 이전의 온도차에 의해 이동하는 열량이 달라지지만, 반사열에 비교하면 그 열량은 적다. 또한, 열을 띤 증착 입자가 이동하면 열의 이송이 일어나지만, 이것도 반사열에 비교해서 작다.Therefore, the heat of reflection from the adhesion member 6 to the evaporation source can be reduced significantly compared with the case where there is no wing member. Moreover, as heat radiated | emitted from the adhesion member 6, there exist radiation heat and vapor deposition particle | grains other than heat of reflection. The amount of heat to be transferred varies depending on the heat source and the previous temperature difference to which heat is transferred, but the amount of heat is smaller than that of the reflected heat. In addition, the transfer of heat occurs when the heated deposition particles move, but this is also small compared with the reflected heat.

본 발명의 반사열 억제 부재(7)는, 이들의 복사열, 증착 입자에 의한 막 두께 센서에의 영향 저감 효과도 구비하는 구조로 되어 있지만, 기재의 간결화를 위하여, 본 명세서에서는 “ 반사열” 억제 부재라고 칭한다.Although the reflection heat suppressing member 7 of the present invention has a structure which also has an effect of reducing the influence on the film thickness sensor due to these radiant heat and deposited particles, for the sake of brevity of the substrate, in the present specification, the reflection heat suppressing member 7 is referred to as a "reflection heat" suppressing member. It is called.

도 3에 있어서, 상술한 바와 같이 방착 부재(6)로 되는 반사열 억제 부재(7)에는 복수의 칼집이 내어지고, 이 칼집이 내어진 부분을 일으킴으로써 날개판 부재(7a)가 형성되어 있다. 본 실시예에서는 직사각형인 방착 부재(6)의 짧은 방향의 변과 같은 방향으로 연장하는 날개판 부재(7a)를 복수 설치한 것이다.In FIG. 3, as described above, a plurality of sheaths are cut out in the reflection heat suppressing member 7 serving as the anti-sticking member 6, and the wing plate member 7a is formed by raising a portion where the sheaths are cut out. In the present embodiment, a plurality of wing plate members 7a extending in the same direction as the side of the short direction of the rectangular attachment member 6 are provided.

이 날개판 부재(7a)는, 증발원으로부터의 열을 반사시킴으로써, 방착 부재(6)의 표면 온도 상승을 억제하고, 열을 확산시키기 위해서 복수 설치되어 있다. 또한, 반사열 억제 부재(7)의 형상은 도 2, 도 3에 나타낸 바와 같이, 증발원(2)으로의 열반사를 억제하기 위해서 증발원(2)의 표면에 대하여 복수의 날개판 부재(7a)를 비스듬하게 경사지게 하고 있다. 혹은 경우에 따라서는 수직 자세로 해도 된다. 또 평행 자세로 한 구조도 가능하다.The wing plate member 7a is provided in plural in order to reflect the heat from the evaporation source to suppress the surface temperature rise of the adhesion member 6 and to diffuse the heat. In addition, as shown in FIGS. 2 and 3, the shape of the reflection heat suppressing member 7 includes a plurality of wing plate members 7a with respect to the surface of the evaporation source 2 in order to suppress heat reflection to the evaporation source 2. Beveling at an angle. Or in some cases, it may be a vertical posture. In addition, a parallel posture is also possible.

반사열 억제 부재(7)의 재질은, 진공 중에서 사용하는 일반적인 것이고, 또한, 탈 가스가 없는 스테인리스를 사용하고 있다. 또 알루미늄을 사용하는 것도 가능하다. The material of the reflection heat suppressing member 7 is a general thing used in vacuum, and stainless steel without degassing is used. It is also possible to use aluminum.

이렇게 본 실시예에 따르면, 증발원(2)으로부터의 열에 의한 방착 부재(6)로부터의 반사열을 대폭으로 저감시킬 수 있다. Thus, according to this embodiment, the heat of reflection from the adhesion | attachment member 6 by the heat from the evaporation source 2 can be reduced significantly.

[제2 실시예][Second Embodiment]

도 4는 본 발명의 제2 실시예에 관한 반사열 억제 부재의 사시도이다.4 is a perspective view of a reflection heat suppressing member according to a second embodiment of the present invention.

도 4에 있어서, 상술한 바와 같이 반사열 억제 부재(7)에는 복수의 칼집이 내어지고, 이 칼집이 내어진 부분을 일으킴으로써 날개판 부재(7a)가 형성되어 있다. 본 실시예에서는 직사각형인 방착 부재(6)의 길이 방향의 변과 같은 방향으로 연장하는 날개판 부재(7a)를 복수 설치한 것이다.In FIG. 4, as described above, a plurality of sheaths are formed in the reflection heat suppressing member 7, and the wing plate member 7a is formed by causing a portion where the sheaths are raised. In the present embodiment, a plurality of wing plate members 7a extending in the same direction as the sides in the longitudinal direction of the rectangular attachment member 6 are provided.

본 실시예에 따르면, 날개판 부재(7a)의 방향을 변경한 것만으로 제1 실시예와 동등한 효과를 얻을 수 있다.According to this embodiment, an effect equivalent to that of the first embodiment can be obtained only by changing the direction of the wing plate member 7a.

[제3 실시예]Third Embodiment

도 5는 본 발명의 제3 실시예에 관한 반사열 억제 부재의 사시도이다.5 is a perspective view of a reflection heat suppressing member according to a third embodiment of the present invention.

도 6은 본 발명의 제2 실시예에 관한 반사열 억제 부재의 부분 단면도이다.6 is a partial cross-sectional view of the reflection heat suppressing member according to the second embodiment of the present invention.

도 5에 있어서, 반사열 억제 부재(7)를 배플(9)로 구성한 것이다. 본 실시예에 의한 배플(9)은 금속판의 압출 성형에 의해 복수의 돌기부를 형성한 것이다. 이 돌기부는 대략 사다리꼴 형상으로 되어 있기 때문에, 평면부와 경사면의 조합 형상을 얻을 수 있다.In FIG. 5, the reflection heat suppressing member 7 is comprised from the baffle 9. As shown in FIG. The baffle 9 which concerns on a present Example forms the some processus | protrusion part by extrusion molding of a metal plate. Since this protrusion part has a substantially trapezoid shape, the combined shape of a flat part and an inclined surface can be obtained.

도 6에 있어서, 화살표로 나타내는 증발원(2)으로부터의 열선(2b)과 같이, 반사열 억제 부재(7)에 대하여 대략 수직 방향으로 열선(2b)이 조사되면, 열선(2b)은 복수의 배플(9)에 충돌한다. 배플(9)의 평면부에 충돌한 열선(2b)은 직각 방향으로 굴절하거나, 배플(9)의 경사면부를 따라 흐르거나 한다. 그 때문에 방착 부재(6)로부터의 반사열은 막 두께 센서(5)를 피하는 방향으로 확산되기 때문에 열 영향을 대폭으로 저감시킬 수 있다.In FIG. 6, when the hot wire 2b is irradiated in a substantially vertical direction with respect to the reflective heat suppressing member 7, like the hot wire 2b from the evaporation source 2 indicated by the arrow, the hot wire 2b is divided into a plurality of baffles ( 9). The hot wire 2b which collides with the planar part of the baffle 9 bends in a right angle direction, or flows along the inclined surface part of the baffle 9. Therefore, since the heat of reflection from the adhesion | attachment member 6 spreads in the direction which avoids the film thickness sensor 5, a thermal influence can be reduced significantly.

이렇게 본 실시예에 따르면, 평면부와 경사면부를 구비한 배플(9)에 의해 증발원(2)로부터의 열에 의한 방착 부재(6)로부터의 반사열을 대폭으로 저감시킬 수 있다.Thus, according to the present embodiment, the heat of reflection from the adhesion member 6 due to the heat from the evaporation source 2 can be greatly reduced by the baffle 9 having the flat portion and the inclined surface portion.

[제4 실시예][Fourth Embodiment]

도 7은 본 발명의 제4 실시예에 관한 반사열 억제 부재의 사시도이다. 7 is a perspective view of a reflection heat suppressing member according to a fourth embodiment of the present invention.

도 8은 본 발명의 제2 실시예에 관한 반사열 억제 부재의 부분 단면도이다.8 is a partial cross-sectional view of the reflection heat suppressing member according to the second embodiment of the present invention.

도 7에 있어서, 반사열 억제 부재(7)를 격자판(10)으로 구성한 것이다. 본 실시예에 의한 격자판(10)은 금속판의 압출 성형에 의해 복수의 개구부(10a)를 형성한 것이다. 개구부(10a)와 개구부(10a)와의 사이는 창살(10b)이 형성되어 있다. 또한, 이 개구부(10a)는 정사각형이어도 직사각형이어도 상관없다.In FIG. 7, the reflection heat suppressing member 7 is comprised by the grating board 10. In FIG. The lattice board 10 which concerns on a present Example forms the some opening part 10a by the extrusion molding of a metal plate. The grate 10b is formed between the opening part 10a and the opening part 10a. In addition, this opening part 10a may be square or rectangular.

도 8에 있어서, 화살표로 나타내는 증발원(2)으로부터의 열선(2b)과 같이, 반사열 억제 부재(7)에 대하여 대략 수직 방향으로 열선(2b)이 조사되면, 열선(2b)은 복수의 개구부(10a) 사이의 창살(10b)에 충돌한다. 창살(10b)에 충돌한 열선(2b)은 직각 방향으로 굴절하거나, 개구부(10a)를 관통하여 흐르거나 한다. 그 때문에 방착 부재(6)로부터의 반사열은 막 두께 센서(5)를 피하는 방향으로 확산되기 때문에, 막 두께 센서(5)에 대한 열 영향을 대폭으로 저감시킬 수 있다.In FIG. 8, when the heating wire 2b is irradiated in a direction substantially perpendicular to the reflective heat suppressing member 7 as the heating wire 2b from the evaporation source 2 indicated by the arrow, the heating wire 2b is divided into a plurality of openings ( It collides with the grate 10b between 10a). The heating wire 2b collided with the grate 10b is refracted in the right angle direction or flows through the opening 10a. Therefore, since the heat of reflection from the adhesion member 6 spreads in the direction which avoids the film thickness sensor 5, the heat influence on the film thickness sensor 5 can be reduced significantly.

또한, 유기 EL 소자를 성막하기 위한 장치로 한정되는 것은 아니며, 증착법에 의해 발광층 등의 유기막이나 전극용 금속막을 형성하는 증착 장치와 증착 방법에도 유효한 것이다.Furthermore, the present invention is not limited to an apparatus for forming an organic EL element, and is also effective for a vapor deposition apparatus and a vapor deposition method for forming an organic film such as a light emitting layer or an electrode metal film by a vapor deposition method.

이렇게 본 실시예에 따르면, 개구부(10a)와 창살(10b)에 의해 증발원(2)으로부터의 열에 의한 방착 부재(6)로부터의 반사열을 대폭으로 저감시킬 수 있기 때문에 막 두께 센서(5)에 열영향을 저감시킬 수 있다. 그로 인해, 막 두께 센서(5)에 의한 막 두께의 검출을 정확하게 행할 수 있다.Thus, according to the present embodiment, since the heat of reflection from the adhesion member 6 due to the heat from the evaporation source 2 can be greatly reduced by the opening 10a and the grate 10b, the heat is applied to the film thickness sensor 5. The impact can be reduced. Therefore, the film thickness by the film thickness sensor 5 can be detected correctly.

1 : 진공 챔버
2 : 증발원
2a : 증발 입자
3 : 기판 보유 지지 기구
4 : 피성막 기판
5 : 막 두께 센서
6 : 방착 부재
7 : 반사열 억제 부재
7a : 날개판 부재
8 : 냉각 기구
9 : 배플
10 : 격자판
10a : 개구부
10b : 창살(바)1: Vacuum chamber
2: evaporation source
2a: evaporated particles
3: substrate holding mechanism
4: film formation substrate
5: film thickness sensor
6: anti-corrosion member
7: reflection heat suppressing member
7a: wing plate member
8: cooling mechanism
9: Baffle
10: grating
10a: opening
10b: Grate (bar)

Claims (4)

피성막 기판을 보유 지지하는 기판 보유 지지 기구와,
상기 피성막 기판과 대향하는 위치에 설치되어 상기 피성막 기판에 증착하는 증발원과,
상기 증발원을 상기 피성막 기판에 대하여 상대 이동시키는 증발원 이동 기구를 구비한 성막 장치로서,
상기 증발원 이동 기구가 상기 증발원을 이동시키는 궤적 상에, 상기 증발원으로부터 증발하는 성막 재료의 양을 제어하는 대기 위치를 갖고, 상기 대기 위치의 전방에 설치된 방착 부재의 표면에 상기 방착 부재로부터 방사되는 반사열을 억제하는 반사열 억제 부재를 구비한 것을 특징으로 하는 성막 장치.A substrate holding mechanism for holding a film substrate,
An evaporation source provided at a position opposite the film formation substrate and deposited on the film formation substrate;
A film forming apparatus comprising an evaporation source moving mechanism for moving the evaporation source relative to the film forming substrate,
Reflected heat radiated from the adhesion member on the surface of the adhesion member provided in front of the standby position, having an atmospheric position on the trajectory where the evaporation source moving mechanism moves the evaporation source to control the amount of film forming material evaporated from the evaporation source. The film-forming apparatus provided with the reflection heat suppression member which suppresses this. 제1항에 있어서, 상기 반사열 억제 부재는, 상기 방착 부재의 기재 표면으로부터 돌출하여 설치된 복수의 반사열 반사 부재인 것을 특징으로 하는 성막 장치.The film forming apparatus according to claim 1, wherein the reflection heat suppressing member is a plurality of reflection heat reflecting members provided to protrude from the substrate surface of the adhesion member. 제2항에 있어서, 상기 반사열 반사 부재는, 상기 방착 부재의 기재 표면으로부터 소정 각도로 돌출한 판재가 배열되어 배치되어 있는 것을 특징으로 하는 성막 장치.The film-forming apparatus of Claim 2 in which the said board | substrate of the reflection heat reflection member arrange | positions and arrange | positions the board | plate material which protruded by the predetermined angle from the base material surface of the said adhesion member. 제1항에 있어서, 상기 반사열 억제 부재는 격자판에 의해 구성되어 있는 것을 특징으로 하는 성막 장치.The film forming apparatus according to claim 1, wherein the reflection heat suppressing member is made of a grating plate.
KR1020130092958A 2012-09-14 2013-08-06 Film forming device KR20140035808A (en)

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