JP2009179885A - Amorphous carbon film forming apparatus - Google Patents

Amorphous carbon film forming apparatus Download PDF

Info

Publication number
JP2009179885A
JP2009179885A JP2009123347A JP2009123347A JP2009179885A JP 2009179885 A JP2009179885 A JP 2009179885A JP 2009123347 A JP2009123347 A JP 2009123347A JP 2009123347 A JP2009123347 A JP 2009123347A JP 2009179885 A JP2009179885 A JP 2009179885A
Authority
JP
Japan
Prior art keywords
plate
workpiece
amorphous carbon
film forming
carbon film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009123347A
Other languages
Japanese (ja)
Other versions
JP4999118B2 (en
Inventor
Junji Ando
淳二 安藤
Naoyuki Sakai
直行 酒井
Toshiyuki Saito
利幸 齊藤
Kazuyuki Nakanishi
和之 中西
Hiroyuki Mori
広行 森
Hideo Tachikawa
英男 太刀川
Kyoji Ito
恭二 伊藤
Mikio Fujioka
幹雄 藤岡
Yoshiyuki Funaki
義行 舟木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JTEKT Corp
Toyota Central R&D Labs Inc
NDK Inc
Original Assignee
Nihon Denshi Kogyo KK
JTEKT Corp
Toyota Central R&D Labs Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nihon Denshi Kogyo KK, JTEKT Corp, Toyota Central R&D Labs Inc filed Critical Nihon Denshi Kogyo KK
Priority to JP2009123347A priority Critical patent/JP4999118B2/en
Publication of JP2009179885A publication Critical patent/JP2009179885A/en
Application granted granted Critical
Publication of JP4999118B2 publication Critical patent/JP4999118B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26Deposition of carbon only
    • C23C16/27Diamond only
    • C23C16/272Diamond only using DC, AC or RF discharges
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26Deposition of carbon only
    • C23C16/27Diamond only
    • C23C16/277Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45578Elongated nozzles, tubes with holes
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52Controlling or regulating the coating process
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16DCOUPLINGS FOR TRANSMITTING ROTATION; CLUTCHES; BRAKES
    • F16D13/00Friction clutches
    • F16D13/58Details
    • F16D13/60Clutching elements
    • F16D13/64Clutch-plates; Clutch-lamellae
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32733Means for moving the material to be treated
    • H01J37/32752Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761Continuous moving
    • H01J37/32779Continuous moving of batches of workpieces
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16DCOUPLINGS FOR TRANSMITTING ROTATION; CLUTCHES; BRAKES
    • F16D2250/00Manufacturing; Assembly
    • F16D2250/0038Surface treatment
    • F16D2250/0046Coating

Abstract

<P>PROBLEM TO BE SOLVED: To provide a technology capable of forming amorphous carbon films at a low cost. <P>SOLUTION: An amorphous carbon film forming apparatus is characterized by being provided with a film forming furnace 11; a plurality of workpiece fixtures 23 for supporting a plurality of plate-like workpieces 22 in a state that the same are piled up vertically in parallel with the interval between facing surfaces of two vertically adjoining of the plate-like workpieces 22 being in a range of 2 to 30 millimeters, the plurality of workpiece fixtures 23 being annularly arranged within the furnace chamber of the film forming furnace 11 at equal intervals and being connected to a negative electrode; nozzles 31, 32 provided for supplying a supply gas, one or more of which are disposed in the centers of the annularly disposed workpiece fixtures 23, the rest being annularly disposed at equal intervals on the centrifugal side; and a plasma power supply 16 connected to at least the workpiece fixture 23. Since the plurality of plate-like workpieces are vertically supported in a piled-up state to the workpiece fixtures, a film forming area remarkably increases. Further, the ununiformity of a film distribution and a film composition distribution is suppressed, and uniform film forming can be performed to all the plate-like workpieces. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、プラズマCVD法によるアモルファス炭素膜の成膜装置に関する。   The present invention relates to an amorphous carbon film forming apparatus using a plasma CVD method.

炭素は、埋設量がほぼ無限であり、かつ無害であることから資源問題および環境問題の面からも極めて優れた材料である。炭素材料は、原子間の結合形態が多様で、ダイヤモンドやダイヤモンドライクカーボン、グラファイト、フラーレン、カーボンナノチューブなど、様々な結晶構造が知られている。中でも、アモルファス炭素膜であるダイヤモンドライクカーボンは、耐摩耗性、固体潤滑性などの機械的特性に優れ、導電性、可視光/赤外光透過率、低誘電率、酸素バリア性などを合わせ持つ機能性材料として注目されており、各産業分野への応用が期待されている。   Carbon is an extremely excellent material from the viewpoint of resource problems and environmental problems because the amount of burying is almost infinite and harmless. Carbon materials have various bond forms between atoms, and various crystal structures such as diamond, diamond-like carbon, graphite, fullerene, and carbon nanotube are known. Among them, diamond-like carbon, which is an amorphous carbon film, has excellent mechanical properties such as wear resistance and solid lubricity, and has conductivity, visible / infrared light transmittance, low dielectric constant, oxygen barrier properties, and the like. It attracts attention as a functional material and is expected to be applied to various industrial fields.

ダイヤモンドライクカーボン(Diamond Like Carbon :DLC)は、その結晶構造が非晶質(アモルファス)であり、通常、化学気相合成法(Chemical Vapor Deposition :CVD)により、基板上に非晶質の炭素が堆積した状態で基板表面に得られる。化学気相合成法としては、特許文献1に開示のように、向かい合う2つの電極間に高周波電力を加えることによって生じるグロー放電を利用した平行平板型プラズマCVD法が一般的である。具体的には、基板を配置した高周波給電電極と、その高周波給電電極と平行に対向する接地電極との間に高周波電力を印加することにより、その間にグロー放電が生じる。このグロー放電を利用して電極間に導入した原料ガス(メタン、エチレン等)を分解し、基板上にDLC薄膜を堆積させる。   Diamond-like carbon (DLC) has an amorphous crystal structure, and amorphous carbon is usually formed on the substrate by chemical vapor deposition (CVD). It is obtained on the substrate surface in the deposited state. As a chemical vapor synthesis method, as disclosed in Patent Document 1, a parallel plate type plasma CVD method using glow discharge generated by applying high-frequency power between two electrodes facing each other is generally used. Specifically, by applying high frequency power between a high frequency power supply electrode on which a substrate is disposed and a ground electrode facing in parallel with the high frequency power supply electrode, glow discharge occurs between them. Using this glow discharge, the source gas (methane, ethylene, etc.) introduced between the electrodes is decomposed, and a DLC thin film is deposited on the substrate.

しかしながら、上記方法で複数枚の基板に一括してDLC薄膜を成膜する場合には、高周波給電電極に複数枚の基板を並べて配置しなくてはならないので、基板の総面積に見合う大面積の電極が必要となる。さらに、大面積への成膜は技術的に難しく、基板ごとにDLC薄膜の膜厚や膜組成が不均一になる虞がある。   However, when a DLC thin film is formed on a plurality of substrates in a batch by the above method, the plurality of substrates must be arranged side by side on the high-frequency power supply electrode. An electrode is required. Furthermore, it is technically difficult to form a film over a large area, and there is a possibility that the film thickness and film composition of the DLC thin film are not uniform for each substrate.

また、他の形態として、円筒形の基体表面に成膜を行うPVD装置では、円筒状の基体表面全面に成膜するためには基体を自転させる必要があり、回転機構を有する装置のコストは高いものとなる。また、基体を自転させるための回転機構が装置の故障要因となることも考えられる。さらに、基体の自転が偏芯する場合も考えられ、そうした場合には、膜厚、組成などが均一な薄膜を得ることができない。   As another form, in a PVD apparatus that forms a film on the surface of a cylindrical substrate, it is necessary to rotate the substrate in order to form a film on the entire surface of the cylindrical substrate. It will be expensive. It is also conceivable that a rotation mechanism for rotating the base body may cause a failure of the apparatus. Furthermore, it is conceivable that the rotation of the substrate is eccentric. In such a case, a thin film having a uniform film thickness, composition, etc. cannot be obtained.

特開平6−256957号公報JP-A-6-256957

本発明は、上記問題点を解決するために成されたものであり、低コストでアモルファス炭素膜を効率よく成膜する技術を提供することを目的とする。   The present invention has been made to solve the above problems, and an object thereof is to provide a technique for efficiently forming an amorphous carbon film at a low cost.

本発明のアモルファス炭素膜の成膜装置は、プラズマCVD法によって導電性の板状ワークの表面にアモルファス炭素膜を形成するアモルファス炭素膜の成膜装置であって、成膜炉と、板状ワークを平行にかつ上下方向に積層状態で複数個保持し、該成膜炉の炉室内に等間隔でリング状に配置されかつマイナス極に結線された複数個のワーク固定具と、リング状に配置された前記ワーク固定具の中心に少なくとも1個及び遠心方向側で等間隔にリング状に配置された複数個で構成され処理ガスを供給するノズルと、少なくとも前記ワーク固定具に結線されたプラズマ電源と、を具備することを特徴とする。   An amorphous carbon film forming apparatus of the present invention is an amorphous carbon film forming apparatus for forming an amorphous carbon film on the surface of a conductive plate workpiece by plasma CVD, and includes a film forming furnace and a plate workpiece. A plurality of workpiece fixtures that are stacked in parallel and in the vertical direction are arranged in a ring shape at equal intervals in the furnace chamber of the film forming furnace, and are arranged in a ring shape. A nozzle configured to include at least one center of the workpiece fixture and a plurality of rings arranged in a ring shape at equal intervals on the centrifugal direction side, and a plasma power source connected to at least the workpiece fixture It is characterized by comprising.

本発明のアモルファス炭素膜の成膜装置において、上下方向に隣接する2個の前記板状ワークの対向面間の間隔は、2〜30mmであるのが望ましい。また、ワーク固定具は、前記板状ワークの少なくとも一部を保持する棒状の保持具を有するのが望ましい。そして、ワーク固定具は前記棒状の保持具を少なくとも3本有し、前記板状ワークは該保持具により少なくとも3か所保持されるのが望ましい。さらに、板状ワークは、リング状であって、前記ワーク固定具によりリング状の該板状ワークの内側部および/または外側部が保持されるのが望ましい。また、板状ワークは、クラッチ板であるのが望ましい。   In the amorphous carbon film forming apparatus of the present invention, it is preferable that the interval between the opposing surfaces of the two plate-like workpieces adjacent in the vertical direction is 2 to 30 mm. Further, it is desirable that the work fixture has a rod-like holder that holds at least a part of the plate-like work. Preferably, the work fixture has at least three rod-like holders, and the plate-like work is held by at least three places by the holders. Further, the plate-like workpiece is preferably in a ring shape, and the inner and / or outer portion of the ring-like plate-like workpiece is preferably held by the workpiece fixture. The plate-like workpiece is preferably a clutch plate.

本発明のアモルファス炭素膜の成膜装置によれば、板状ワークは、ワーク固定具に上下方向に積層状態で複数個保持されるので、成膜面積が大幅に増加し、効率の良い成膜が可能となる。また、一度の成膜で従来よりも複数のワークを処理することができ、効率の良い成膜が可能となる。   According to the amorphous carbon film forming apparatus of the present invention, since a plurality of plate-like workpieces are held in a stacked state in the vertical direction on the work fixture, the film forming area is greatly increased and efficient film formation is achieved. Is possible. In addition, a plurality of workpieces can be processed with a single film formation, and an efficient film formation is possible.

上記構成の成膜装置は、ワークを回転させなくてもよいので回転機構が必要なく、構造が簡単で低コストである。さらに、ワーク固定具と処理ガスを供給するノズルの配置を上記の配置としたことで、処理ガスの分布が良好となり、膜厚、膜組成にばらつきのない良好な膜品質のアモルファス炭素膜が得られる。つまり、この構成により、膜分布・膜組成の不均一分布を抑制し、全ての板状ワークに均一にアモルファス炭素膜を成膜することができる。   The film forming apparatus having the above configuration does not need to rotate the workpiece, and therefore does not require a rotation mechanism, has a simple structure, and is low in cost. Furthermore, the arrangement of the work fixture and the nozzle for supplying the processing gas is the above-described arrangement, so that the distribution of the processing gas is improved, and an amorphous carbon film having good film quality with no variation in film thickness and film composition is obtained. It is done. That is, with this configuration, non-uniform distribution of film distribution and film composition can be suppressed, and an amorphous carbon film can be uniformly formed on all plate-like workpieces.

アモルファス炭素膜の成膜装置の概略説明図である。It is a schematic explanatory drawing of the film-forming apparatus of an amorphous carbon film. アモルファス炭素膜の成膜装置の概略説明図であって、図1のX−X’断面図である。FIG. 2 is a schematic explanatory view of an amorphous carbon film forming apparatus and is a cross-sectional view taken along the line X-X ′ of FIG. 1. 実施例1〜4および比較例1のアモルファス炭素膜の成膜装置の陰極およびガス供給手段の断面図である。It is sectional drawing of the cathode of the amorphous carbon film-forming apparatus of Examples 1-4 and the comparative example 1, and a gas supply means. 実施例1〜4および比較例1のアモルファス炭素膜の成膜装置の部分拡大図であって、図3のY−Y’断面を上方から見た図である。FIG. 4 is a partially enlarged view of the amorphous carbon film forming apparatus of Examples 1 to 4 and Comparative Example 1, and is a view of the Y-Y ′ cross section of FIG. 3 as viewed from above. 実施例5のアモルファス炭素膜の成膜装置のワーク固定具の説明図であって、(II)は板状ワークを固定した治具を示す(I)のZ−Z’での部分拡大断面図である。It is explanatory drawing of the workpiece fixing tool of the film-forming apparatus of the amorphous carbon film of Example 5, Comprising: (II) is a partial expanded sectional view in ZZ 'of (I) which shows the jig | tool which fixed the plate-shaped workpiece. It is. 実施例5のアモルファス炭素膜の成膜装置の板状ワークを示す図である。It is a figure which shows the plate-shaped workpiece | work of the film-forming apparatus of the amorphous carbon film of Example 5. FIG. 実施例6のアモルファス炭素膜の成膜装置のワーク固定具の説明図であって、(I)は板状ワークを固定したワーク固定具の説明図、(II)は(I)のW−W’での断面図である。It is explanatory drawing of the workpiece fixing tool of the film-forming apparatus of the amorphous carbon film of Example 6, Comprising: (I) is explanatory drawing of the workpiece fixing tool which fixed the plate-shaped workpiece, (II) is WW of (I). It is sectional drawing in '. 実施例6のワーク固定具の模式図であって、板状ワークを固定する手順の説明図である。It is a schematic diagram of the workpiece fixing tool of Example 6, Comprising: It is explanatory drawing of the procedure which fixes a plate-shaped workpiece. 実施例1のグロー放電の様子を模式的に示した図である。It is the figure which showed the mode of the glow discharge of Example 1 typically. 実施例2のグロー放電の様子を模式的に示した図である。It is the figure which showed the mode of the glow discharge of Example 2 typically. 実施例3のグロー放電の様子を模式的に示した図である。It is the figure which showed the mode of the glow discharge of Example 3 typically. 実施例4のグロー放電の様子を模式的に示した図である。It is the figure which showed the mode of the glow discharge of Example 4 typically. 比較例1のグロー放電の様子を模式的に示した図である。It is the figure which showed typically the mode of the glow discharge of the comparative example 1. FIG. アモルファス炭素膜の成膜方法における、処理ガス圧力とシース幅の関係の一例を示すグラフである。It is a graph which shows an example of the relationship between process gas pressure and sheath width in the film-forming method of an amorphous carbon film. ワーク固定具に板状ワークを左右方向に固定する場合の模式図である。It is a schematic diagram in the case of fixing a plate-shaped workpiece to the workpiece fixture in the left-right direction. 各実施例で行うホットプレスに用いるプレス装置を模式的に示した図であって、板状ワークをセットした状態の断面図である。It is the figure which showed typically the press apparatus used for the hot press performed in each Example, Comprising: It is sectional drawing of the state which set the plate-shaped workpiece. 実施例1〜4および実施例6の板状ワークの歪みを示すグラフである。It is a graph which shows distortion of the plate-shaped workpieces of Examples 1-4 and Example 6. 実施例5の板状ワークの歪みを示すグラフである。It is a graph which shows the distortion of the plate-shaped workpiece of Example 5. アモルファス炭素膜の成膜操作により生じた歪みを模式的に示した図であって、板状ワークを厚さ方向に積層した(ただし、図は1枚のみを示す)場合に、真上から見た場合の断面図(上図)および、真横から見た場合の断面図(下図)である。FIG. 5 is a diagram schematically showing distortion caused by the film forming operation of an amorphous carbon film, and when viewed from directly above when a plate-like workpiece is laminated in the thickness direction (however, only one piece is shown). It is sectional drawing (upper figure) at the time of seeing, and sectional drawing (lower figure) at the time of seeing from right side.

以下に、本発明のアモルファス炭素膜の成膜装置の実施の形態を説明する。   Hereinafter, an embodiment of the amorphous carbon film forming apparatus of the present invention will be described.

[アモルファス炭素膜の成膜方法]
本発明のアモルファス炭素膜の成膜装置の説明に先立って、アモルファス炭素膜の成膜方法を説明する。アモルファス炭素膜の成膜方法は、プラズマCVD法(より具体的には、直流プラズマCVD法、高周波プラズマCVD法など)によって導電性の板状ワークの表面にアモルファス炭素膜を形成するアモルファス炭素膜の成膜方法である。
[Method of forming amorphous carbon film]
Prior to the description of the amorphous carbon film forming apparatus of the present invention, an amorphous carbon film forming method will be described. The amorphous carbon film is formed by a plasma CVD method (more specifically, a direct current plasma CVD method, a high frequency plasma CVD method, etc.) that forms an amorphous carbon film on the surface of a conductive plate-like workpiece. This is a film forming method.

プラズマCVD法では、二つの電極の間に電力を加えることによって、グロー放電が生じる。このグロー放電を利用して、電極間に導入した処理ガスを分離して、マイナス電位側の電極(板状ワーク)に薄膜を堆積させる。処理ガスは、水素、アルゴン等のうちの少なくとも1種からなる希釈ガスと、メタン、エチレン、アセチレン、ベンゼンなどの炭化水素ガスのうちいずれか1種以上、および、テトラメチルシラン(TMS:Si(CH)、シラン、SiCl4 等のSi含有ガスのうちのいずれか1種以上からなる原料ガスとの混合ガスであるのが望ましい。 In the plasma CVD method, glow discharge is generated by applying electric power between two electrodes. Using this glow discharge, the processing gas introduced between the electrodes is separated, and a thin film is deposited on the negative potential side electrode (plate-shaped workpiece). The processing gas is one of at least one of a diluent gas such as hydrogen and argon, a hydrocarbon gas such as methane, ethylene, acetylene, and benzene, and tetramethylsilane (TMS: Si ( It is desirable that it is a mixed gas with a source gas composed of at least one of Si-containing gases such as CH 3 ) 4 ), silane, and SiCl 4 .

板状ワークの素材は、導電性があれば特に限定はない。板状ワークの形状にも特に限定はなく、平板状、円盤状、リング状や、自動車などの部品として用いられるクラッチ板であってもよい。また、板状ワークの厚さは、シース幅に影響するものではないが0.4〜4mm、より好ましくは0.7〜1mmである。   The material of the plate workpiece is not particularly limited as long as it has conductivity. There is no particular limitation on the shape of the plate-like workpiece, and it may be a flat plate shape, a disk shape, a ring shape, or a clutch plate used as a part of an automobile or the like. The thickness of the plate-like workpiece does not affect the sheath width, but is 0.4 to 4 mm, more preferably 0.7 to 1 mm.

板状ワークは、成膜炉内に配置されかつマイナス極に結線されたワーク固定具に固定される。マイナス極に結線されたワーク固定具には、導電性の板状ワークの少なくとも一部が接触するようにして固定される。   The plate-like work is fixed to a work fixture that is disposed in the film forming furnace and connected to the negative electrode. The work fixing tool connected to the negative pole is fixed so that at least a part of the conductive plate-shaped work comes into contact.

シース幅は、隣接する2個の該板状ワークの対向面間の間隔(ワーク間隔)以下とする。シース幅がワーク間隔以下であれば、シースの幅でワーク固定具と板状ワークの外面に沿って均一にグロー放電し、板状ワークの両面にアモルファス炭素膜を成膜することができる。シース幅がワーク間隔以上であると、成膜時に局所的に放電が強くなり、グロー放電が不安定となるので、好適な成膜ができない。   The sheath width is set to be equal to or less than the interval between two opposing plate-like workpieces (workpiece interval). If the sheath width is equal to or smaller than the workpiece interval, glow discharge can be performed uniformly along the outer surface of the workpiece fixture and the plate workpiece with the width of the sheath, and an amorphous carbon film can be formed on both surfaces of the plate workpiece. When the sheath width is equal to or larger than the workpiece interval, the discharge becomes strong locally during film formation, and the glow discharge becomes unstable, so that suitable film formation cannot be performed.

ここで、一般的に「シース」とは、陰極表面から負グローまでの発光の弱い領域を指す。シースでは、急激な電位降下が生じ、正イオンは陰極に向けて加速され衝突する。この衝突によって電子が放出され、放出された電子(2次電子)はシースの電位勾配によって加速され負グロー域へ入射し、気体分子を電離させる。シースの発光が弱いのは、陰陽両極間に印加された電圧(または、先に述べた電位降下)により加速された2次電子が気体分子を十分に励起する程の運動エネルギーを持つに到らないためである。すなわち、本明細書の「シース幅」とは、板状ワークおよびワーク固定具から負グローまでの発光の弱い領域の幅である。   Here, the “sheath” generally refers to a region where light emission is weak from the cathode surface to the negative glow. In the sheath, a rapid potential drop occurs, and positive ions are accelerated toward the cathode and collide. Electrons are emitted by this collision, and the emitted electrons (secondary electrons) are accelerated by the potential gradient of the sheath and enter the negative glow region, ionizing gas molecules. The light emission of the sheath is weak because the secondary electrons accelerated by the voltage applied between the negative and positive electrodes (or the potential drop described above) have enough kinetic energy to sufficiently excite the gas molecules. This is because there is not. That is, the “sheath width” in the present specification is the width of a weak light emission region from the plate-like work and the work fixture to the negative glow.

複数の板状ワークは、平行にかつ隣接する2個の板状ワークの対向面間の間隔を2〜30mmの範囲で板状ワークの厚さ方向に積層状態で配置するのが好ましい。板状ワークの間隔が2mm以下であると、グロー放電が不安定となることがあるので、好適な成膜ができない。また、30mm以上では、安定したグロー放電は得られるものの、ワーク固定具に固定できる板状ワークの数が減少するので、大量処理には不向きである。2個の板状ワークの対向面間の間隔は、より好ましくは3〜20mm、さらに好ましくは5〜15mmである。   The plurality of plate-like workpieces are preferably arranged in a laminated state in the thickness direction of the plate-like workpiece within a range of 2 to 30 mm between the opposing surfaces of two plate-like workpieces that are adjacent in parallel. If the distance between the plate-like workpieces is 2 mm or less, the glow discharge may become unstable, and thus suitable film formation cannot be performed. On the other hand, when the thickness is 30 mm or more, stable glow discharge can be obtained, but the number of plate-like workpieces that can be fixed to the workpiece fixing tool is reduced, which is not suitable for mass processing. The distance between the opposing surfaces of the two plate-like workpieces is more preferably 3 to 20 mm, and further preferably 5 to 15 mm.

ワーク固定具の形状は、各板状ワークの少なくとも一部と接触し、各板状ワークを平行に厚さ方向に積層状態で配置できれば、特に限定はない。したがって、ワーク固定具は、板状ワークを平行に成膜炉の上下方向に固定する形式でも、左右方向に固定する形式でも、いずれの形式でもよい。また、ワーク固定具に板状ワークを固定する方法としては、板状ワークが円盤状であれば板状ワークの外周部をワーク固定具に固定する、さらに、板状ワークがリング状であればリングの内側部および/または外側部をワーク固定具に固定する、などの方法が挙げられる。例えば、円柱状のワーク固定具に、リング状の板状ワークの内側部分が全体的に接するように板状ワークを固定する(図3、図4参照)と、グロー放電の放電面積が少なくなり、投入電力が少なくて済む。また、複数本の棒状の保持具からなるワーク固定具に、板状ワークを部分的に保持するように固定する(図5、図7参照)と、処理ガスの流れが良好となり、得られるアモルファス炭素膜の組成がより均一となる。   The shape of the work fixture is not particularly limited as long as it is in contact with at least a part of each plate-like workpiece and can be arranged in a laminated state in the thickness direction in parallel. Therefore, the work fixture may be of any form, such as a form in which the plate-like work is fixed in parallel in the vertical direction of the film forming furnace, or a form in which the plate work is fixed in the left-right direction. Moreover, as a method of fixing the plate-like workpiece to the workpiece fixture, if the plate-like workpiece is a disc shape, the outer peripheral portion of the plate-like workpiece is fixed to the workpiece fixture. Furthermore, if the plate-like workpiece is a ring shape Examples include a method of fixing the inner part and / or the outer part of the ring to a work fixture. For example, if a plate-like workpiece is fixed to a cylindrical workpiece fixture so that the inner part of the ring-shaped plate-like workpiece is in contact with the whole (see FIGS. 3 and 4), the discharge area of glow discharge is reduced. Less power is required. Further, when the plate-like workpiece is fixed so as to be partially held on a workpiece fixture consisting of a plurality of rod-like holders (see FIGS. 5 and 7), the flow of the processing gas becomes good and the resulting amorphous material is obtained. The composition of the carbon film becomes more uniform.

なお、図15に、ワーク固定具に板状ワークを平行に成膜炉の左右方向に固定する一例を図示する。左右に延びる棒状のワーク固定具に、リング状の板状ワークを等間隔に吊している。   FIG. 15 shows an example in which a plate-like workpiece is fixed to the workpiece fixture in parallel in the left-right direction of the film forming furnace. Ring-shaped plate-like workpieces are suspended at equal intervals on a rod-like workpiece fixture extending in the left-right direction.

そして、シース幅が板状ワーク間隔以下の2〜30mmとなるように、処理ガス圧力の範囲を13〜1330Pa、より好ましくは66.5〜1064Pa、さらに好ましくは266〜798Paに調整する。   And the range of process gas pressure is adjusted to 13-1330 Pa, More preferably, it is 66.5-1064 Pa, More preferably, it is 266-798 Pa so that a sheath width may be 2-30 mm below plate-shaped work space | interval.

図14は、アモルファス炭素膜の成膜方法における処理ガス圧力とシース幅の関係を示すグラフである。なお、このグラフでは、一例として、成膜温度500℃でCH4 、Ar、H2 、TMSの混合ガスを処理ガスとして用いている。処理ガス圧力が13Pa未満ではシース幅が30mmより広くなり、板状ワーク間の間隔を広くする必要があるため、ワーク固定具に固定できる板状ワークの数が減少し、大量処理することができない。一方、処理ガス圧力が高いとグローが不安定になりやすく、1330Pa以上ではグロー放電の均一保持が困難となる。   FIG. 14 is a graph showing the relationship between the processing gas pressure and the sheath width in the amorphous carbon film forming method. In this graph, as an example, a mixed gas of CH 4, Ar, H 2, and TMS is used as a processing gas at a film forming temperature of 500 ° C. When the processing gas pressure is less than 13 Pa, the sheath width becomes wider than 30 mm, and it is necessary to widen the interval between the plate-like workpieces. Therefore, the number of plate-like workpieces that can be fixed to the workpiece fixture is reduced and large-scale processing cannot be performed. . On the other hand, if the processing gas pressure is high, the glow tends to become unstable, and if it is 1330 Pa or higher, it is difficult to keep the glow discharge uniform.

なお、成膜温度は、プラズマCVD法でアモルファス炭素膜を成膜する際に一般的に用いられている温度条件であればよい。望ましくは、成膜温度はワークの焼入れ/焼戻し温度以下、あるいは変態温度以下30〜50℃とすると良い。より具体的には、好ましくは450〜630℃、より好ましくは500〜600℃である。ここで、成膜温度とは、板状ワークの表面での温度である。   The film formation temperature may be any temperature condition generally used when forming an amorphous carbon film by plasma CVD. Desirably, the film forming temperature is set to 30 to 50 ° C. below the workpiece quenching / tempering temperature or below the transformation temperature. More specifically, it is preferably 450 to 630 ° C, more preferably 500 to 600 ° C. Here, the film formation temperature is the temperature at the surface of the plate-like workpiece.

上述した構成のワーク固定具および板状ワークは、プラズマ電源から電圧を印加すると、板状ワークに沿って放電するので、板状ワーク1枚ごとにグロー放電し、板状ワークの両面にアモルファス炭素膜を成膜することができる。   Since the workpiece fixture and plate workpiece having the above-described configuration discharge along the plate workpiece when a voltage is applied from the plasma power source, glow discharge occurs for each plate workpiece, and amorphous carbon is formed on both sides of the plate workpiece. A film can be formed.

また、成膜炉は円筒状の炉室を持ち、ワーク固定具は該炉室と同軸的に等間隔でリング状に配置され、処理ガスを供給する複数の筒状のノズルが炉室と同軸的にワーク固定具の遠心方向側で等間隔にリング状に配置される。このとき同時に、炉室の中心に1個以上互いに垂直方向に平行にノズルが配置されているのが望ましい。処理ガスを供給するノズルは、ワーク固定具の遠心方向側に配置するほかにも、ワーク固定具の内部に配置してもよい。   The film forming furnace has a cylindrical furnace chamber, the work fixture is coaxially arranged with the furnace chamber in a ring shape, and a plurality of cylindrical nozzles for supplying processing gas are coaxial with the furnace chamber. In particular, they are arranged in a ring shape at equal intervals on the centrifugal direction side of the work fixture. At the same time, it is desirable that one or more nozzles be arranged in the vertical direction at the center of the furnace chamber. The nozzle for supplying the processing gas may be arranged inside the workpiece fixture in addition to the centrifugal direction of the workpiece fixture.

次に、前矯正工程および後矯正工程について説明する。   Next, the pre-correction process and the post-correction process will be described.

板状ワークは、通常、圧延後パンチング等で剪断して、任意の形状に加工されるので、加工による残留応力が生じる。そして、プラズマCVD法によるアモルファス炭素膜の成膜の際には、成膜時の熱で板状ワークの残留応力が開放されることにより、板状ワークに反りや歪みが発生し、変形する。   Since the plate-like workpiece is usually sheared by punching after rolling and processed into an arbitrary shape, residual stress is generated by the processing. When the amorphous carbon film is formed by the plasma CVD method, the residual stress of the plate-like workpiece is released by the heat at the time of film formation, so that the plate-like workpiece is warped or distorted and deforms.

さらに、プラズマCVD法によるアモルファス炭素膜の成膜においては、成膜時の熱に加え板状ワークの自重により、成膜中に板状ワークが変形する。特に、上下方向に積層された板状ワークは、変形しやすい。たとえば、図19のAおよびBは、例として、円盤状の板状ワーク2a、2bと、板状ワークを固定したワーク固定具3a、3bと、を真上から見た断面図(上図)と、真横から見た断面図(下図)を模式的に示す。なお、図19は、説明のため板状ワークを1枚だけ示しているが、板状ワークは、その厚さ方向(すなわち上下方向)に複数枚積層される。Aでは、板状ワーク2aの中央部がワーク固定具3aに挟持され固定されているが、固定されていない外周部は、成膜中に板状ワークの自重により矢印の方向へと変形する。その結果、板状ワーク2aは2a’に示すように、傘状に歪む。また、Bでは、板状ワーク2bの外周部が3本の棒状保持具からなるワーク固定具3bに載置されているが、中央部は、成膜中に板状ワークの自重により矢印の方向へと変形する。その結果、板状ワーク2bは2b’に示すように、皿状に歪む。   Further, in the formation of an amorphous carbon film by the plasma CVD method, the plate-like workpiece is deformed during the film formation due to the weight of the plate-like workpiece in addition to the heat during the film formation. In particular, plate-like workpieces stacked in the vertical direction are easily deformed. For example, FIGS. 19A and 19B are cross-sectional views of the disc-shaped plate-like workpieces 2a and 2b and the workpiece fixtures 3a and 3b to which the plate-like workpiece is fixed, as an example (upper view). And a cross-sectional view (below) viewed from the side. Note that FIG. 19 shows only one plate-like workpiece for explanation, but a plurality of plate-like workpieces are stacked in the thickness direction (that is, the vertical direction). In A, the central portion of the plate-like workpiece 2a is sandwiched and fixed by the workpiece fixture 3a, but the outer peripheral portion that is not fixed is deformed in the direction of the arrow by the weight of the plate-like workpiece during film formation. As a result, the plate-like workpiece 2a is distorted in an umbrella shape as indicated by 2a '. In B, the outer periphery of the plate-like workpiece 2b is placed on a workpiece fixture 3b composed of three rod-like holders, but the central portion is in the direction of the arrow due to the weight of the plate-like workpiece during film formation. Transforms into As a result, the plate-like workpiece 2b is distorted in a dish shape as indicated by 2b '.

そして、残留応力が開放されることによる変形と、自重による変形とが成膜中に同時に板状ワークに発生するため、成膜後の板状ワークは、凹凸やヒダ状など、不規則な形状に歪む可能性がある。   And since deformation due to the release of residual stress and deformation due to its own weight occur in the plate-shaped workpiece at the same time during film formation, the plate-shaped workpiece after film formation has irregular shapes such as irregularities and folds. May be distorted.

そこで、成膜中に生じる歪みを抑制、除去するために、アモルファス炭素膜の成膜操作の前または後に矯正を行うとよい。   Therefore, in order to suppress and remove distortion generated during film formation, correction may be performed before or after the film formation operation of the amorphous carbon film.

前矯正工程は、アモルファス炭素膜の成膜操作の前に、成膜温度以上その板状ワークの変態温度未満で板状ワークをホットプレスするものである。成膜温度以上、変態温度未満の温度範囲でのホットプレスにより、加工により生じた板状ワークの残留応力を緩和することができる。その結果、残留応力が開放されることにより発生する板状ワークの歪みを抑制できる。また、前述の残留応力の開放と重力との相乗効果による歪発生も効果的に抑制することができる。また、板状ワークの変態温度以上で前矯正工程を行うと、板状ワークの残留応力は緩和されるが、板状ワークの組織が変わるため適切ではない。なお、成膜温度およびホットプレスの温度は、板状ワークの表面での温度である。   In the pre-correction step, the plate-like workpiece is hot-pressed at a temperature equal to or higher than the film-forming temperature and lower than the transformation temperature of the plate-like workpiece before the amorphous carbon film is formed. Residual stress of the plate-like workpiece generated by processing can be relaxed by hot pressing in a temperature range not lower than the film forming temperature and lower than the transformation temperature. As a result, it is possible to suppress the distortion of the plate-like workpiece that occurs when the residual stress is released. In addition, the generation of strain due to the synergistic effect of the release of the residual stress and gravity can be effectively suppressed. Further, if the pre-correction step is performed at a temperature equal to or higher than the transformation temperature of the plate workpiece, the residual stress of the plate workpiece is relaxed, but this is not appropriate because the structure of the plate workpiece is changed. The film forming temperature and the hot press temperature are temperatures on the surface of the plate-like workpiece.

板状ワークの材質に特に限定はないが、炭素鋼などの鉄鋼材料からなるのが望ましい。炭素鋼からなる板状ワークであれば、望ましくは600℃以上700℃以下、さらに望ましくは630℃以上680℃以下で前矯正工程としてのホットプレスを行う。ホットプレスの温度が700℃を越えると、炭素鋼の変態温度を超える場合が考えられるので、好ましくない。また、600℃未満では、残留応力の開放が十分に行えない場合があるので、好ましい矯正効果を得るのが困難である。なお、ホットプレスの成形温度の最適値は、650℃である。   There is no particular limitation on the material of the plate workpiece, but it is preferably made of a steel material such as carbon steel. In the case of a plate-like workpiece made of carbon steel, hot pressing is preferably performed as a pre-correction step at 600 ° C. or more and 700 ° C. or less, more preferably 630 ° C. or more and 680 ° C. or less. If the temperature of the hot press exceeds 700 ° C., the case may exceed the transformation temperature of carbon steel, which is not preferable. If the temperature is lower than 600 ° C., the residual stress may not be sufficiently released, and it is difficult to obtain a preferable correction effect. The optimum value for the hot press molding temperature is 650 ° C.

前矯正工程では、従来用いられているプレス装置を用いればよい。また、ホットプレスの雰囲気も特に限定するものではない。   In the pre-correction step, a conventionally used press device may be used. Also, the hot press atmosphere is not particularly limited.

後矯正工程は、アモルファス炭素膜の成膜操作の後に、表面にアモルファス炭素膜が形成された板状ワークをアモルファス炭素膜の成膜温度以下でホットプレスするものである。成膜温度以下で後矯正工程を行うことにより、加工により生じた板状ワークの残留応力が開放されることにより発生する歪みと、自重により発生する歪みとを、アモルファス炭素膜を劣化させることなく除去できる。成膜温度を超えてホットプレスすると、アモルファス炭素膜が酸化したり、剥離や亀裂などが発生したりする虞があるので、好ましくない。なお、成膜温度およびホットプレスの温度は、板状ワークの表面での温度である。   The post-correction step is to hot press a plate-like workpiece having an amorphous carbon film formed on the surface thereof at a temperature lower than the film forming temperature of the amorphous carbon film after the film forming operation of the amorphous carbon film. By performing the post-correction process at a temperature lower than the film formation temperature, the distortion generated by releasing the residual stress of the plate-like workpiece caused by processing and the distortion generated by its own weight can be obtained without degrading the amorphous carbon film. Can be removed. Hot pressing beyond the film formation temperature is not preferable because the amorphous carbon film may be oxidized or may be peeled off or cracked. The film forming temperature and the hot press temperature are temperatures on the surface of the plate-like workpiece.

板状ワークの材質に特に限定はないが、炭素鋼などの鉄鋼材料からなるのが望ましい。炭素鋼からなる板状ワークであれば、望ましくは300℃以上500℃以下、さらに望ましくは350℃以上450℃以下でホットプレスを行う。ホットプレスの温度が300℃未満では、炭素鋼からなる板状ワークの残留応力を緩和するには十分な温度ではなく、好ましい矯正効果を得ることが困難である。また、500℃を超えると、アモルファス炭素膜に剥離や亀裂、酸化などが起こる虞があるので好ましくない。なお、ホットプレスの成形温度の最適値は、400℃である。   There is no particular limitation on the material of the plate workpiece, but it is preferably made of a steel material such as carbon steel. In the case of a plate-shaped workpiece made of carbon steel, hot pressing is desirably performed at 300 ° C. or more and 500 ° C. or less, more desirably 350 ° C. or more and 450 ° C. or less. If the temperature of the hot press is less than 300 ° C., the temperature is not sufficient to relieve the residual stress of the plate-like workpiece made of carbon steel, and it is difficult to obtain a preferable correction effect. Moreover, when it exceeds 500 degreeC, since there exists a possibility that peeling, a crack, oxidation, etc. may occur in an amorphous carbon film, it is not preferable. The optimum value of the hot press molding temperature is 400 ° C.

後矯正工程では、従来用いられているプレス装置を用いればよい。また、ホットプレスの雰囲気も特に限定するものではなく、例えば、大気中でホットプレスを行っても、上記の温度範囲であれば、アモルファス炭素膜が酸化することはない。   In the post-correction process, a conventionally used press apparatus may be used. The atmosphere of hot pressing is not particularly limited. For example, even if hot pressing is performed in the air, the amorphous carbon film is not oxidized within the above temperature range.

なお、前矯正工程および後矯正工程は、成膜温度や板状ワークの材質に合わせて適宜選択し、少なくとも一方を行えばよい。また、前矯正工程および後矯正工程は、残留応力による歪みや自重による歪みの他、膜厚差から生じた歪み(アモルファス炭素膜からの圧縮応力によって板状ワークに発生する歪み)に対しても、歪みの抑制、除去の効果を発揮する。   In addition, the pre-correction process and the post-correction process may be appropriately selected according to the film formation temperature and the material of the plate-shaped workpiece, and at least one of them may be performed. In addition, the pre-correction process and post-correction process are not only for distortion caused by residual stress and strain due to its own weight, but also for distortion caused by film thickness difference (distortion generated in a plate-like workpiece due to compressive stress from the amorphous carbon film). Demonstrate the effect of suppressing and removing distortion.

[アモルファス炭素膜の成膜装置]
本発明のアモルファス炭素膜の成膜装置は、プラズマCVD法によって導電性の板状ワークの表面にアモルファス炭素膜を形成するアモルファス炭素膜の成膜装置であり、成膜炉と、板状ワークを固定するワーク固定具と、処理ガスを供給するノズルと、少なくともワーク固定具に結線されたプラズマ電源とを具備する。
[Amorphous carbon film deposition system]
An amorphous carbon film forming apparatus of the present invention is an amorphous carbon film forming apparatus for forming an amorphous carbon film on the surface of a conductive plate workpiece by plasma CVD, and includes a film forming furnace and a plate workpiece. A workpiece fixture to be fixed, a nozzle for supplying a processing gas, and at least a plasma power source connected to the workpiece fixture.

成膜炉は、真空気密可能であれば特に限定はないが、円筒状の炉室を有するものが好ましい。   The film forming furnace is not particularly limited as long as it can be vacuum-tight, but preferably has a cylindrical furnace chamber.

板状ワークの素材は、導電性があれば特に限定はない。板状ワークの形状にも特に限定はないが、リング状が望ましく、クラッチ板であってもよい。また、板状ワークの厚さは、シース幅に影響するものではないが0.4〜4mm、より好ましくは0.7〜1mmである。   The material of the plate workpiece is not particularly limited as long as it has conductivity. The shape of the plate-like workpiece is not particularly limited, but a ring shape is desirable and a clutch plate may be used. The thickness of the plate-like workpiece does not affect the sheath width, but is 0.4 to 4 mm, more preferably 0.7 to 1 mm.

ワーク固定具は、板状ワークを平行にかつ上下方向に隣接する2個の板状ワークの対向面間の間隔を好ましくは2〜30mmの範囲で上下方向に積層状態で複数個保持する。板状ワークの間隔が2mm以下であると、局所的にシースが接近しすぎ、グロー放電が不安定となるので、好適な成膜ができない。また、30mm以上では、安定したグロー放電は得られるものの、ワーク固定具に固定できる板状ワークの数が減少し、大量処理には不向きである。2個の板状ワークの対向面間の間隔は、より好ましくは3〜20mm、さらに好ましくは5〜15mmである。   The workpiece fixing tool holds a plurality of plate-like workpieces in a stacked state in the vertical direction, preferably in the range of 2 to 30 mm between the opposing surfaces of two plate-like workpieces adjacent in parallel in the vertical direction. When the distance between the plate-like workpieces is 2 mm or less, the sheath is too close to the local area and the glow discharge becomes unstable, so that suitable film formation cannot be performed. On the other hand, when the thickness is 30 mm or more, stable glow discharge can be obtained, but the number of plate-like workpieces that can be fixed to the workpiece fixture is reduced, which is not suitable for mass processing. The distance between the opposing surfaces of the two plate-like workpieces is more preferably 3 to 20 mm, and further preferably 5 to 15 mm.

ワーク固定具に板状ワークを固定する方法は[アモルファス炭素膜の成膜方法]の欄でも述べたが、板状ワークが上下方向に積層状態で複数個保持されれば、その形態に特に限りはない。例えば、ワーク固定具は、板状ワークの少なくとも一部を保持する棒状の保持具を有するのが望ましい。棒状の保持具の大きさに特に限定はないが、板状ワークがリング状であれば、リングの内径程度の太さを有する棒状の保持具によりリングの内側部を固定してもよい(図3、図4参照)。また、複数本の棒状の保持具により、板状ワークを部分的に保持してもよい。例えば、板状ワークが円盤状であれば、ワーク固定具は棒状の保持具を少なくとも3本有し、板状ワークは該保持具により少なくとも3か所保持されるのが望ましい(図5、図7参照)。さらに、板状ワークがリング状であれば、ワーク固定具(保持具)によりリング状の板状ワークの内側部および/または外側部が保持されるのが望ましい。また、保持具は、板状ワークが成膜中に落下等することなく保持できる形状であれば、その形状に特に限定はない。保持具の形状としては、保持具に複数の板状ワークを上下方向に平行に載置したり挟持したり、保持具と板状ワークとが互いに嵌合・係合できる、段差部や突出部を有するのがよい。   The method of fixing the plate-like workpiece to the workpiece fixture is also described in the section of [Method of depositing amorphous carbon film]. However, if a plurality of plate-like workpieces are held in a stacked state in the vertical direction, the form is particularly limited. There is no. For example, it is desirable that the workpiece fixture has a rod-like holder that holds at least a part of the plate-like workpiece. The size of the rod-shaped holder is not particularly limited, but if the plate-like workpiece is a ring shape, the inner portion of the ring may be fixed by a rod-shaped holder having a thickness about the inner diameter of the ring (see FIG. 3, see FIG. Further, the plate-like workpiece may be partially held by a plurality of rod-like holders. For example, if the plate-like workpiece is a disc shape, the workpiece fixture preferably has at least three rod-like holders, and the plate-like workpiece is preferably held by at least three places (FIGS. 5 and 5). 7). Furthermore, if the plate-shaped workpiece is ring-shaped, it is desirable that the inner portion and / or the outer portion of the ring-shaped plate-shaped workpiece be held by the workpiece fixture (holding tool). Further, the shape of the holder is not particularly limited as long as the plate-like workpiece can be held without dropping during film formation. As for the shape of the holder, a stepped part or a protruding part that allows a plurality of plate-like workpieces to be placed or sandwiched in parallel in the vertical direction, and the holder and the plate-like workpiece can be fitted and engaged with each other. It is good to have.

また、ワーク固定具は、成膜炉の炉室内に等間隔でリング状に複数個配置される。全てのワーク固定具は、マイナス極に結線される。ワーク固定具には導電性の板状ワークの一部が接触するようにして固定されているので、板状ワークもマイナス極に結線される。   A plurality of work fixtures are arranged in a ring shape at equal intervals in the furnace chamber of the film forming furnace. All work fixtures are connected to the negative pole. Since a part of the conductive plate-like workpiece is fixed to the workpiece fixture so as to contact, the plate-like workpiece is also connected to the negative electrode.

処理ガスを供給するノズルは、成膜炉の炉室内にリング状に配置されたワーク固定具の中心に1個以上及び遠心方向側で等間隔にリング状に配置された複数個で構成される。中心に配置されるノズルは、通常の成膜装置に用いられるものでよく、特に限定はない。例えば、ワーク固定具の上方に設置された複数の下向きのガス供給孔をもつリングガスノズルや、図1および2に示す円筒状ノズル、1本以上配置されガスを放射状に供給する管状のノズルなどが好ましい。また、遠心方向側で等間隔にリング状に配置されるノズルも、通常の成膜装置に用いられるものでよく特に限定はないが、ノズルの側面に複数の孔をもつ管状のノズルが好ましい。この際、板状ワークとノズルとは、50〜300mmの間隔を有するのが望ましい。   One or more nozzles for supplying the processing gas are formed at the center of a work fixture arranged in a ring shape in the furnace chamber of the film forming furnace and a plurality arranged in a ring shape at equal intervals on the centrifugal direction side. . The nozzle arranged at the center may be used for a normal film forming apparatus, and is not particularly limited. For example, a ring gas nozzle having a plurality of downward gas supply holes installed above the work fixture, a cylindrical nozzle shown in FIGS. 1 and 2, one or more tubular nozzles arranged radially to supply gas, etc. preferable. Further, the nozzles arranged in a ring shape at equal intervals on the centrifugal direction side may also be used in a normal film forming apparatus, and are not particularly limited. However, a tubular nozzle having a plurality of holes on the side surface of the nozzle is preferable. At this time, it is desirable that the plate-like workpiece and the nozzle have an interval of 50 to 300 mm.

プラズマ電源は、通常のプラズマCVD法に用いられるプラズマ電源であれば、特に限定はない。プラズマ電源は、少なくともワーク固定具に結線し、ワーク固定具をマイナス極に通電する。   The plasma power source is not particularly limited as long as it is a plasma power source used in a normal plasma CVD method. The plasma power source is connected to at least the work fixture and energizes the work fixture to the negative electrode.

その他、熱電対、赤外線放射温度計などの温度測定手段や膜厚測定手段などを適宜具備してもよい。   In addition, a temperature measuring means such as a thermocouple or an infrared radiation thermometer, a film thickness measuring means, or the like may be provided as appropriate.

以下に、本発明の実施例を図を用いて説明する。図1はアモルファス炭素膜の成膜装置の概略説明図であり、図2は図1の成膜装置のX−X’断面図である。   Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic explanatory view of an amorphous carbon film forming apparatus, and FIG. 2 is an X-X ′ sectional view of the film forming apparatus of FIG. 1.

(実施例1)
本実施例のアモルファス炭素膜の成膜装置は、円筒状でステンレス製のチャンバー11を成膜炉として用い、排気通路12によりチャンバー11と連通する排気系13を有する。排気系13は、油回転ポンプ、メカニカルブースターポンプ、油拡散ポンプからなり、排気通路12に配した排気調整バルブ15を開閉することによりチャンバー11内の処理圧力を調整する。また、チャンバー11には、透光窓18を設け、透光窓18を介して赤外線放射温度計(図示せず)によりワーク22の表面温度を測定する。
Example 1
The amorphous carbon film forming apparatus of this embodiment uses a cylindrical, stainless steel chamber 11 as a film forming furnace, and has an exhaust system 13 communicating with the chamber 11 through an exhaust passage 12. The exhaust system 13 includes an oil rotary pump, a mechanical booster pump, and an oil diffusion pump, and adjusts the processing pressure in the chamber 11 by opening and closing an exhaust adjustment valve 15 disposed in the exhaust passage 12. The chamber 11 is provided with a light transmission window 18, and the surface temperature of the workpiece 22 is measured through the light transmission window 18 using an infrared radiation thermometer (not shown).

チャンバー11内には、プラズマ電源16のマイナス極に通電された陰極20とガス供給手段30が配設される。   In the chamber 11, a cathode 20 and a gas supply means 30 that are energized to the negative electrode of the plasma power source 16 are disposed.

陰極20は、プラズマ電源16のマイナス極に連結された支持台21と、支持台21上に載置された5つのワーク固定具23と、それぞれのワーク固定具23に固定された板状ワーク22とからなる。   The cathode 20 includes a support base 21 connected to the negative pole of the plasma power supply 16, five work fixtures 23 placed on the support base 21, and a plate-like work 22 fixed to each work fixture 23. It consists of.

円板状の支持台21は、炭素鋼製で、円筒状のチャンバー11と同軸的に、チャンバー11の底部の陰極20に固定される。   The disk-shaped support base 21 is made of carbon steel, and is fixed to the cathode 20 at the bottom of the chamber 11 coaxially with the cylindrical chamber 11.

板状ワーク22は、厚さ0.9mm、直径100mmの炭素工具鋼からなる。板状ワーク22は図4に示すリング状で、その内周面に内歯221を有する。なお、板状ワーク22は、ワーク固定具53に固定される前に予めホットプレスを施したものである。以下にその手順を説明する。   The plate-like workpiece 22 is made of carbon tool steel having a thickness of 0.9 mm and a diameter of 100 mm. The plate-like workpiece 22 has a ring shape shown in FIG. 4 and has internal teeth 221 on the inner peripheral surface thereof. The plate-like workpiece 22 is subjected to hot pressing in advance before being fixed to the workpiece fixture 53. The procedure will be described below.

図16に示すプレス装置100に、板状ワーク22を重ねてセットした。なお、プレス装置100は、図示しない昇温炉と、昇温炉の内部に設置された台座101と錘103と、からなり、錘103は油圧により矢印の方向へ押し付けられる。昇温炉内で板状ワーク22を室温から650℃まで0.5時間で昇温した後、押し付け荷重1kgとし、ホットプレスを行った。650℃を保って2時間保持した後、炉内で0.5時間冷却した。   A plate-like workpiece 22 was set on the press apparatus 100 shown in FIG. The press device 100 includes a heating furnace (not shown) and a pedestal 101 and a weight 103 installed inside the heating furnace, and the weight 103 is pressed in the direction of the arrow by hydraulic pressure. The plate-like workpiece 22 was heated from room temperature to 650 ° C. in 0.5 hours in a heating furnace, and then subjected to hot pressing with a pressing load of 1 kg. After maintaining at 650 ° C. for 2 hours, it was cooled in the furnace for 0.5 hour.

5つのワーク固定具23は炭素鋼製で、円筒状のチャンバー11と同軸的になるよう支持台21上に等間隔にリング状に配置される。ワーク固定具23は、その中心がチャンバー11の中心より直径40cmの円周上に等間隔をもってリング状に配置される。   The five workpiece fixtures 23 are made of carbon steel, and are arranged in a ring shape at equal intervals on the support base 21 so as to be coaxial with the cylindrical chamber 11. The center of the work fixture 23 is arranged in a ring shape at equal intervals on a circumference of 40 cm in diameter from the center of the chamber 11.

ワーク固定具23は、支持台21上に支持され垂直に延びる円筒状の固定柱231と、複数の板状ワーク22を等間隔で平行かつ積層状態に固定するための複数個の治具232とを有する保持具230からなる(図3および図4)。治具232は円筒形で、円周面の一端には、段差部233を有する。段差部233は断面直角で板状ワーク22の厚さと等しい段差を有し、板状ワーク22の内歯221は段差部233に同軸的にはめ込むことができる。   The work fixture 23 is supported on the support 21 and extends vertically, and a plurality of jigs 232 for fixing the plurality of plate-like works 22 in parallel and in a laminated state at equal intervals. (Fig. 3 and Fig. 4). The jig 232 is cylindrical and has a step 233 at one end of the circumferential surface. The step portion 233 has a step equal to the thickness of the plate-like workpiece 22 at a right angle in cross section, and the inner teeth 221 of the plate-like workpiece 22 can be fitted coaxially into the step portion 233.

板状ワーク22をワーク固定具23に固定するには、まず、固定柱231の上方を底具251の筒内へ差し込み、底具251を固定柱231に沿って下方へ移動させて、支持台21上に底具251を設置する。次に、底具251と同様にして、上記方法により板状ワーク22がはめ込まれた治具232を、底具251上に設置する。この後、同様の手順を繰り返すことにより板状ワーク22が所望の枚数となるまで治具232を積層する。板状ワーク22が所望の枚数となったら、最上部に頭具252を設置する。   In order to fix the plate-like workpiece 22 to the workpiece fixture 23, first, the upper side of the fixed column 231 is inserted into the cylinder of the bottom unit 251, and the bottom unit 251 is moved downward along the fixed column 231 to provide a support base. The bottom tool 251 is installed on 21. Next, in the same manner as the bottom tool 251, the jig 232 into which the plate-like workpiece 22 is fitted by the above method is installed on the bottom tool 251. Thereafter, the same procedure is repeated to stack the jigs 232 until the desired number of plate-like workpieces 22 is obtained. When the desired number of plate-like workpieces 22 is reached, the head tool 252 is installed at the top.

上下方向に隣接する2枚の板状ワーク22の対向面間の間隔は、30mmとした。ここで、隣接する2枚の板状ワーク22の対向面間の間隔とは、図3のDで示される距離で、以下「ワーク間隔」とする。すなわち、ワーク間隔は、治具232の高さから段差部233の高さ(つまり板状ワーク22の厚さ)を差し引いた距離に等しくなる。この際、1つのワーク固定具23には35枚の板状ワーク22が固定でき、装置内には合計175枚の板状ワーク22が固定されていることになる。   The interval between the opposing surfaces of the two plate-like workpieces 22 adjacent in the vertical direction was 30 mm. Here, the interval between the opposing surfaces of two adjacent plate-like workpieces 22 is a distance indicated by D in FIG. That is, the work interval is equal to the distance obtained by subtracting the height of the stepped portion 233 (that is, the thickness of the plate-like work 22) from the height of the jig 232. At this time, 35 plate-like workpieces 22 can be fixed to one workpiece fixture 23, and a total of 175 plate-like workpieces 22 are fixed in the apparatus.

ガス供給手段30は、原料ガスと希釈ガスとの混合ガスを規定の流量比でチャンバー11に供給する。混合ガスは、マスフローコントローラ(MFC)33により流量を調整後、ガス供給バルブ34を経てガス供給管35によりチャンバー11の内部に供給される。ガス供給管35は、チャンバー11内で、中央のガスノズル31と、周囲の6本のガスノズル32とに分岐する。ガスノズル31は、チャンバー11の中心部に位置するように設置される。また、6本のガスノズル32は、リング状に配置されたワーク固定具23の遠心方向側に等間隔にリング状に配置される。なお、ガスノズル32は、チャンバー11の中心から35cmの位置にそれぞれ配置される。それぞれのガスノズル31,32には、その長さ方向に等間隔で複数の孔311,321が開いている。また、孔311に関しては、6本のガスバルブ32の方向に放射状に開けられている。   The gas supply means 30 supplies a mixed gas of a source gas and a dilution gas to the chamber 11 at a specified flow rate ratio. The mixed gas is adjusted in flow rate by a mass flow controller (MFC) 33 and then supplied into the chamber 11 through a gas supply valve 34 and a gas supply pipe 35. The gas supply pipe 35 branches into a central gas nozzle 31 and six surrounding gas nozzles 32 in the chamber 11. The gas nozzle 31 is installed so as to be located at the center of the chamber 11. Further, the six gas nozzles 32 are arranged in a ring shape at equal intervals on the centrifugal direction side of the work fixture 23 arranged in a ring shape. The gas nozzle 32 is disposed at a position 35 cm from the center of the chamber 11. A plurality of holes 311 and 321 are opened at equal intervals in the length direction of each gas nozzle 31 and 32. Further, the holes 311 are formed radially in the direction of the six gas valves 32.

プラズマ電源16のプラス極は、チャンバー11に通電される。プラス極はアースされ、チャンバー11の壁面が接地電極(陽極)となる。   The positive electrode of the plasma power supply 16 is energized to the chamber 11. The positive electrode is grounded, and the wall surface of the chamber 11 serves as a ground electrode (anode).

以上のような構成のアモルファス炭素膜の成膜装置を作動させて、アモルファス炭素膜を成膜した。まず、排気系13によりチャンバー11内を到達真空度が5×10−3Paまで排気した。つぎに、ガス供給バルブ34を開け、原料ガスであるメタンガス、TMSガスと希釈ガスである水素ガス、アルゴンガスの流量をMFC33で調整してチャンバー11に供給した。その後、排気調整バルブ15の開度を調整し、チャンバー11内の処理圧を133Paとした。   The amorphous carbon film was formed by operating the amorphous carbon film forming apparatus configured as described above. First, the exhaust system 13 evacuated the chamber 11 to a vacuum degree of 5 × 10 −3 Pa. Next, the gas supply valve 34 was opened, and the flow rates of methane gas, TMS gas, hydrogen gas, and argon gas as the source gas were adjusted by the MFC 33 and supplied to the chamber 11. Thereafter, the opening degree of the exhaust adjustment valve 15 was adjusted, and the processing pressure in the chamber 11 was set to 133 Pa.

チャンバー11内に所定の流量比の水素、アルゴンからなる希釈ガスが導入され、所定の処理圧が確保されたら、プラズマ電源16により陰極20に9.5kWを供給した。電圧を印加すると、陰極20の周辺にグロー放電が生じ、このグロー放電によりにより、板状ワーク22を500℃に加熱した。続いて原料ガスであるメタンガスとTMSガスを所定の流量で供給し、板状ワーク22の表面にアモルファス炭素膜が成長した。   When a dilution gas composed of hydrogen and argon at a predetermined flow rate ratio was introduced into the chamber 11 and a predetermined processing pressure was secured, 9.5 kW was supplied to the cathode 20 from the plasma power source 16. When a voltage was applied, glow discharge was generated around the cathode 20, and the plate-like workpiece 22 was heated to 500 ° C. by this glow discharge. Subsequently, methane gas and TMS gas as raw material gases were supplied at a predetermined flow rate, and an amorphous carbon film was grown on the surface of the plate-like workpiece 22.

本実施例の装置では、シース幅が25mmで、安定した放電が得られた。また、30分間の放電により、板状ワーク22の表面に膜厚2μmのアモルファス炭素膜が得られた。得られたアモルファス炭素膜の膜厚分布は、均一であった。   In the apparatus of this example, a stable discharge was obtained with a sheath width of 25 mm. In addition, an amorphous carbon film having a thickness of 2 μm was obtained on the surface of the plate-like workpiece 22 by discharging for 30 minutes. The film thickness distribution of the obtained amorphous carbon film was uniform.

なお、アモルファス炭素膜の成膜条件を表1に示す。また、グロー放電の様子を図9に示すが、この図は説明のために板状ワーク22を3枚固定したものとした。陰極20の周囲に一定の幅でシース25が形成された。シース25は26で示す部分で重なり合っていながらも、板状ワーク22に沿ってシースが形成された。   Table 1 shows the conditions for forming the amorphous carbon film. Further, the state of glow discharge is shown in FIG. 9. In this figure, three plate-like workpieces 22 are fixed for explanation. A sheath 25 having a constant width was formed around the cathode 20. The sheath 25 was formed along the plate-like workpiece 22 while overlapping at the portion indicated by 26.

(実施例2)
実施例1の成膜装置において、ワーク間隔を10mm(板状ワーク、合計500枚)とした。また、成膜中のガス圧、シース幅は、表1の通りである。
(Example 2)
In the film forming apparatus of Example 1, the work interval was set to 10 mm (plate work, total of 500 sheets). The gas pressure and sheath width during film formation are as shown in Table 1.

本実施例の装置では、安定した放電が得られ、成膜されたアモルファス炭素膜の膜厚分布は、均一であった。グロー放電の様子を図10に示すが、この図は説明のために板状ワーク22を3枚固定したものとした。陰極20の周囲に一定の幅でシース25が形成された。   In the apparatus of this example, stable discharge was obtained, and the film thickness distribution of the formed amorphous carbon film was uniform. FIG. 10 shows the state of glow discharge. In this figure, three plate-like workpieces 22 are fixed for explanation. A sheath 25 having a constant width was formed around the cathode 20.

(実施例3)
実施例1の成膜装置において、ワーク間隔を3mm(板状ワーク、合計600枚)とした。また、成膜中のガス圧、シース幅は、表1の通りである。
(Example 3)
In the film forming apparatus of Example 1, the work interval was 3 mm (plate work, total 600 sheets). The gas pressure and sheath width during film formation are as shown in Table 1.

本実施例の装置では、安定した放電が得られ、成膜されたアモルファス炭素膜の膜厚分布は、均一であった。グロー放電の様子を図11に示すが、この図は説明のために板状ワーク22を3枚固定したものとした。陰極20の周囲に一定の幅でシース25が形成された。なお、26で示す部分では、シース25は重なり合っているが、放電は安定に保たれ、板状ワーク22に沿ってシースが形成されている。   In the apparatus of this example, stable discharge was obtained, and the film thickness distribution of the formed amorphous carbon film was uniform. The state of glow discharge is shown in FIG. 11. In this figure, three plate-like workpieces 22 are fixed for explanation. A sheath 25 having a constant width was formed around the cathode 20. In addition, in the part shown by 26, although the sheath 25 has overlapped, the discharge is kept stable and the sheath is formed along the plate-shaped workpiece 22.

(実施例4)
実施例1の成膜装置において、ワーク間隔を2mm(板状ワーク、合計750枚)とした。また、成膜中のガス圧、シース幅は、表1の通りである。なお、ワーク間隔が2mmの場合、最大2500枚の板状ワークを装置内に固定できるが、板状ワークの枚数が多すぎるとプラズマ電源出力が不足し、ワーク全体にシースが形成できないため、750枚とした。
Example 4
In the film forming apparatus of Example 1, the work interval was set to 2 mm (plate work, total of 750 sheets). The gas pressure and sheath width during film formation are as shown in Table 1. When the workpiece interval is 2 mm, a maximum of 2500 plate-like workpieces can be fixed in the apparatus. However, if the number of plate-like workpieces is too large, the plasma power output is insufficient and a sheath cannot be formed on the entire workpiece. It was a sheet.

本実施例の装置では、安定した放電が得られ、成膜されたアモルファス炭素膜の膜厚分布は、均一であった。グロー放電の様子を図12に示すが、この図は説明のために板状ワーク22を3枚固定したものとした。陰極20の周囲に一定の幅でシース25が形成された。なお、26で示す部分では、シース25は重なり合ったが、放電は安定に保たれ、板状ワーク22に沿ってシースが形成されている。   In the apparatus of this example, stable discharge was obtained, and the film thickness distribution of the formed amorphous carbon film was uniform. The state of glow discharge is shown in FIG. 12, in which three plate-like workpieces 22 are fixed for explanation. A sheath 25 having a constant width was formed around the cathode 20. In addition, in the part shown by 26, although the sheath 25 overlapped, the discharge was kept stable and the sheath was formed along the plate-shaped workpiece 22.

(比較例1)
実施例1の成膜装置において、ワーク間隔を1mm(板状ワーク、合計500枚)とした。また、成膜中のガス圧、シース幅は、表1の通りである。
(Comparative Example 1)
In the film forming apparatus of Example 1, the work interval was set to 1 mm (plate-like work, total of 500 sheets). The gas pressure and sheath width during film formation are as shown in Table 1.

本実施例の装置では、局所的にグロー放電が強くなり、均一な放電が得られなかった。グロー放電の様子を図13に示すが、この図は説明のために板状ワーク22を3枚固定したものとした。本比較例ではシース25が接近しすぎるため、26で示す板状ワークの外周部分のみが局所的に重なり合って放電し、板状ワーク22に沿ってシースが形成されない。   In the apparatus of this example, glow discharge was locally strong and uniform discharge could not be obtained. The state of glow discharge is shown in FIG. 13. In this figure, three plate-like workpieces 22 are fixed for explanation. In this comparative example, since the sheath 25 is too close, only the outer peripheral portion of the plate-like workpiece indicated by 26 is locally overlapped and discharged, and the sheath is not formed along the plate-like workpiece 22.

(実施例5)
実施例1の成膜装置において、陰極20の板状ワーク22、ワーク固定具23を以下に説明する板状ワーク42、ワーク固定具43(図5)とした。
(Example 5)
In the film forming apparatus of Example 1, the plate-like workpiece 22 and the workpiece fixture 23 of the cathode 20 were used as the plate-like workpiece 42 and the workpiece fixture 43 (FIG. 5) described below.

本実施例において、陰極20は、プラズマ電源16のマイナス極に連結された支持台21と、支持台21上に載置された5つのワーク固定具43と、それぞれのワーク固定具43に固定された板状ワーク42とからなる。   In the present embodiment, the cathode 20 is fixed to the support base 21 connected to the negative pole of the plasma power source 16, the five work fixtures 43 placed on the support base 21, and the respective work fixtures 43. And a plate-like workpiece 42.

板状ワーク42は、厚さ0.9mm、直径100mmの炭素工具鋼からなる。板状ワーク42は図6に示すリング状で、その外周面に外歯421を有する。   The plate-like workpiece 42 is made of carbon tool steel having a thickness of 0.9 mm and a diameter of 100 mm. The plate-like workpiece 42 has a ring shape shown in FIG. 6 and has external teeth 421 on the outer peripheral surface thereof.

5つのワーク固定具43は炭素鋼製で、図5に示す支持棒431と、治具432とからなる3本の棒状の保持具430を有する。また、治具432は、円筒形で外周面に突出部をもつ受け爪433と円筒形のスペーサー434を有する。なお、図5で、(I)は説明のため、板状ワークを図示していないが、(II)は板状ワークを固定した治具432を示す。また、(II)は、(I)のZ−Z’での断面図であるが、3本の保持具のうち、いずれの保持具も同様の構成である。一端を支持台21に固定された3本の支持棒431には、支持台21からの高さが同じとなるようにナット453(図示せず)を螺合する。貫通孔を同軸的にリング状に3個もつ円盤状の底板451は、その貫通孔に支持棒431を挿入し、ナット453により底板451が下方から保持されることで、支持棒431を等間隔かつ同軸的に固定する。底板451と、後述する底板451と同一形状の天板452は、3本の支持棒431の支えとなり、支持棒431同士の間隔は固定される。   The five workpiece fixtures 43 are made of carbon steel, and have three rod-like holders 430 including a support rod 431 and a jig 432 shown in FIG. The jig 432 has a cylindrical catch claw 433 having a protrusion on the outer peripheral surface and a cylindrical spacer 434. In FIG. 5, (I) does not show a plate-like workpiece for illustration, but (II) shows a jig 432 to which the plate-like workpiece is fixed. Further, (II) is a cross-sectional view taken along the line Z-Z ′ of (I), but any of the three holders has the same configuration. Nuts 453 (not shown) are screwed onto the three support rods 431 having one end fixed to the support base 21 so that the height from the support base 21 is the same. A disc-shaped bottom plate 451 having three through-holes in a ring shape is inserted into the through-hole and a support bar 431 is inserted into the through-hole, and the bottom plate 451 is held from below by a nut 453 so that the support bars 431 are equally spaced. And fix it coaxially. A bottom plate 451 and a top plate 452 having the same shape as a later-described bottom plate 451 serve as a support for the three support bars 431, and the interval between the support bars 431 is fixed.

板状ワーク42をワーク固定具43に固定するには、まず、3本の支持棒431の上方をそれぞれスペーサー434の筒内へ差し込み、スペーサー434を支持棒431に沿って下方へ移動させる。次に、スペーサー434と同様にして、受け爪433を、突出部が底板451の中心軸に向くようにスペーサー434上に設置する。そして、受け爪433上に板状ワーク42の外歯421部分を載置する。こうして、板状ワーク42は、それぞれの支持棒431の同じ高さの位置に設けられた受け爪433に載置され、板状ワーク42の外歯421が3つの受け爪433により下方から支えられる状態で固定される。この後、同様の手順を繰り返すことにより板状ワーク42が所望の枚数となるまで治具432を積層する。板状ワーク42が所望の枚数となったら、スペーサー434を設置した後、最上部に天板452を設置する。天板452は、ナット453により上方から固定される。   In order to fix the plate workpiece 42 to the workpiece fixture 43, first, the upper portions of the three support rods 431 are respectively inserted into the cylinders of the spacers 434, and the spacers 434 are moved downward along the support rods 431. Next, similarly to the spacer 434, the receiving claw 433 is installed on the spacer 434 so that the protruding portion faces the central axis of the bottom plate 451. Then, the external tooth 421 portion of the plate workpiece 42 is placed on the receiving claw 433. Thus, the plate-like workpiece 42 is placed on the receiving claws 433 provided at the same height positions of the respective support bars 431, and the external teeth 421 of the plate-like workpiece 42 are supported from below by the three receiving claws 433. Fixed in state. Thereafter, the same procedure is repeated to stack the jigs 432 until the desired number of plate workpieces 42 is obtained. When the desired number of plate workpieces 42 is reached, the spacer 434 is installed, and then the top plate 452 is installed at the top. The top plate 452 is fixed from above by nuts 453.

上下方向に隣接する2枚の板状ワーク42の対向面間の間隔は、10mmとした。この際、1つのワーク固定具43には100枚の板状ワーク42が固定でき、装置内には合計500枚の板状ワーク42が固定されていることになる。   The interval between the opposing surfaces of the two plate-like workpieces 42 adjacent in the vertical direction was 10 mm. At this time, 100 plate workpieces 42 can be fixed to one workpiece fixture 43, and a total of 500 plate workpieces 42 are fixed in the apparatus.

以上のような構成のアモルファス炭素膜の成膜装置を作動させて、実施例1と同様にアモルファス炭素膜を成膜した。本実施例の装置では、板状ワーク42に沿ってシースが形成され、シース幅は5mmで、安定した放電が得られた。得られたアモルファス炭素膜の膜厚分布は、均一であった。   An amorphous carbon film was formed in the same manner as in Example 1 by operating the amorphous carbon film forming apparatus having the above configuration. In the apparatus of this example, a sheath was formed along the plate-like workpiece 42, the sheath width was 5 mm, and stable discharge was obtained. The film thickness distribution of the obtained amorphous carbon film was uniform.

得られた板状ワーク42にホットプレスを施した。図16に示すプレス装置100に、板状ワーク42を重ねてセットした。なお、プレス装置100は、図示しない炉と、昇温炉の内部に設置された台座101と錘103と、からなり、錘103は油圧により矢印の方向へ押し付けられる。昇温炉内で板状ワーク42を室温から400℃まで0.3時間で昇温した後、押し付け荷重1kgとし、ホットプレスを行った。400℃を保って2時間保持した後、炉内で0.3時間冷却した。   The obtained plate workpiece 42 was hot pressed. A plate-like workpiece 42 was stacked and set on the press device 100 shown in FIG. The pressing device 100 includes a furnace (not shown) and a pedestal 101 and a weight 103 installed inside the temperature raising furnace, and the weight 103 is pressed in the direction of the arrow by hydraulic pressure. The plate-like workpiece 42 was heated from room temperature to 400 ° C. in 0.3 hours in a heating furnace, and then subjected to hot pressing with a pressing load of 1 kg. After maintaining at 400 ° C. for 2 hours, it was cooled in the furnace for 0.3 hours.

(実施例6)
実施例1の成膜装置において、ワーク固定具23を、以下に説明するワーク固定具53(図7、図8)とした。
(Example 6)
In the film forming apparatus of Example 1, the workpiece fixture 23 was a workpiece fixture 53 (FIGS. 7 and 8) described below.

本実施例において、陰極20は、プラズマ電源16のマイナス極に連結された支持台21と、支持台21上に載置された5つのワーク固定具53と、それぞれのワーク固定具53に固定された板状ワーク22とからなる。   In the present embodiment, the cathode 20 is fixed to the support base 21 connected to the negative pole of the plasma power supply 16, the five work fixtures 53 placed on the support base 21, and the respective work fixtures 53. And a plate-like workpiece 22.

5つのワーク固定具53は炭素鋼製で、支持台21に載置され固定される底板551と、底板551に一端部が取り付けられた3本の棒状の保持具530(支持棒531〜533)と、からなる。そして、3本の保持具530は、図7および図8に示す支持棒531,532,533をそれぞれ有する。支持棒531〜533のうち、支持棒531〜533は、それぞれ底板551に一端部が取り付けられている。なお、図7は、本実施例のワーク固定具53の説明図である。(I)は、ワーク固定具53に板状ワーク22を固定した様子を示しているが、説明のため、板状ワークは3枚とし、保持具530の位置を一点鎖線で示した。(II)は、(I)のW−W’での断面図であって支持棒531での断面図を示しているが、支持棒532,533においても同様の構成である。   The five workpiece fixtures 53 are made of carbon steel, a bottom plate 551 placed and fixed on the support base 21, and three rod-shaped holders 530 (support rods 531 to 533) having one end attached to the bottom plate 551. And consist of The three holders 530 have support bars 531, 532, and 533 shown in FIGS. 7 and 8, respectively. Of the support rods 531 to 533, one end of each of the support rods 531 to 533 is attached to the bottom plate 551. In addition, FIG. 7 is explanatory drawing of the workpiece fixing tool 53 of a present Example. (I) shows a state in which the plate-like workpiece 22 is fixed to the workpiece fixture 53, but for explanation, the number of plate-like workpieces is three, and the position of the holder 530 is indicated by a one-dot chain line. (II) is a cross-sectional view taken along the line W-W ′ of (I) and shows a cross-sectional view at the support bar 531, but the support bars 532 and 533 have the same configuration.

保持具530は、支持棒531〜533と、円筒形の支持具553と、円筒形のスペーサー554を有する。支持棒531〜533は、底板551に取り付けられ、支持棒531〜533には、支持具553とスペーサー554が交互に嵌挿されている。この際、スペーサー554は、支持具553よりも径が小さいため、支持具553とスペーサー554との間に段差部が生じる。この段差部で板状ワーク22の内歯221が下方側から受けられることにより、板状ワーク22がワーク固定具53に固定される。   The holder 530 includes support rods 531 to 533, a cylindrical support 553, and a cylindrical spacer 554. The support bars 531 to 533 are attached to the bottom plate 551, and support tools 553 and spacers 554 are alternately inserted into the support bars 531 to 533. At this time, since the spacer 554 has a smaller diameter than the support 553, a stepped portion is generated between the support 553 and the spacer 554. The plate-like workpiece 22 is fixed to the workpiece fixture 53 by receiving the internal teeth 221 of the plate-like workpiece 22 from the lower side at this stepped portion.

次に、本実施例のワーク固定具53に板状ワーク22を固定する手順を図8を用いて説明する。   Next, the procedure for fixing the plate-like workpiece 22 to the workpiece fixture 53 of this embodiment will be described with reference to FIG.

ワーク固定具53は、3本の保持具530の支持棒のうち、2本の支持棒531,532は、その一端部が底板551に固定されているが、支持棒533は、その一端部と着脱孔555とを螺合させることにより着脱可能となっている。はじめに、支持棒533を有する保持具530が底板551から外されたワーク固定具53を横向きにする。そして、支持棒531,532を有する2本の保持具530に、底板551と平行となるように板状ワーク22を載置する。この際、板状ワーク22は、その内歯221が、支持具553とスペーサー554の外径差から生じる段差部に掛けられる(図8(IV)参照)。所望の枚数の板状ワーク22が掛けられたら、支持棒533を有する保持具530を板状ワーク22の内周側に挿入する(図8(III)参照)。そして、支持棒533を有する保持具530に設けられた段差部を、板状ワークの内歯221に掛けた後(図8(IV)参照)、支持棒533と底板551とを着脱孔555により螺合する。その後、横向きになっているワーク固定具53を縦向きにすることで、板状ワーク22の内歯221が段差部により下方側から受けられ、板状ワーク22は底板551と平行となるように積層状態で、ワーク固定具53に固定される。そして、底板551は、支持台21に固定される。   Of the support rods of the three holders 530, the work fixture 53 includes two support rods 531 and 532, one end of which is fixed to the bottom plate 551. It can be attached / detached by screwing the attachment / detachment hole 555. First, the holder 530 having the support rod 533 turns the workpiece fixture 53 removed from the bottom plate 551 sideways. Then, the plate-like workpiece 22 is placed on the two holders 530 having the support bars 531 and 532 so as to be parallel to the bottom plate 551. At this time, the internal teeth 221 of the plate-like workpiece 22 are hung on the stepped portion resulting from the outer diameter difference between the support 553 and the spacer 554 (see FIG. 8 (IV)). When the desired number of plate-like workpieces 22 are hung, a holder 530 having a support bar 533 is inserted into the inner peripheral side of the plate-like workpiece 22 (see FIG. 8 (III)). Then, after the stepped portion provided in the holder 530 having the support bar 533 is hung on the internal teeth 221 of the plate-like workpiece (see FIG. 8 (IV)), the support bar 533 and the bottom plate 551 are connected by the attachment / detachment hole 555. Screw together. After that, by turning the workpiece fixing tool 53 in the horizontal direction vertically, the internal teeth 221 of the plate-like workpiece 22 are received from the lower side by the step portion so that the plate-like workpiece 22 is parallel to the bottom plate 551. It is fixed to the work fixture 53 in a stacked state. The bottom plate 551 is fixed to the support base 21.

上下方向に隣接する2枚の板状ワーク22の対向面間の間隔は、10mmとした。この際、1つのワーク固定具53には100枚の板状ワーク22が固定でき、装置内には合計500枚の板状ワーク22が固定されていることになる。   The interval between the opposing surfaces of the two plate-like workpieces 22 adjacent in the vertical direction was 10 mm. At this time, 100 plate-like workpieces 22 can be fixed to one workpiece fixture 53, and a total of 500 plate-like workpieces 22 are fixed in the apparatus.

以上のような構成のアモルファス炭素膜の成膜装置を作動させて、実施例1と同様にアモルファス炭素膜を成膜した。本実施例の装置では、板状ワーク22に沿ってシースが形成され、シース幅は5mmで、安定した放電が得られた。得られたアモルファス炭素膜の膜厚分布は、均一であった。   An amorphous carbon film was formed in the same manner as in Example 1 by operating the amorphous carbon film forming apparatus having the above configuration. In the apparatus of this example, a sheath was formed along the plate-like workpiece 22, the sheath width was 5 mm, and stable discharge was obtained. The film thickness distribution of the obtained amorphous carbon film was uniform.

Figure 2009179885
<板状ワークの歪みについて>
図17は、アモルファス炭素膜の成膜前にホットプレスを施した板状ワーク(実施例2の板状ワーク22に相当)の歪み量の変化を示すグラフである。また、図18は、アモルファス炭素膜の成膜後にホットプレスを施した板状ワーク(実施例5の板状ワーク42に相当)の歪み量の変化を示すグラフである。板状ワークの歪み量は、それぞれ初期(ホットプレスも成膜も行われていない状態)、ホットプレス後、成膜後に測定した。
Figure 2009179885
<Distortion of plate workpiece>
FIG. 17 is a graph showing changes in the strain amount of a plate-like workpiece (corresponding to the plate-like workpiece 22 of Example 2) subjected to hot pressing before the formation of the amorphous carbon film. FIG. 18 is a graph showing changes in the strain amount of a plate-like workpiece (corresponding to the plate-like workpiece 42 of Example 5) subjected to hot pressing after the formation of the amorphous carbon film. The amount of distortion of the plate-like workpiece was measured at the initial stage (in a state where neither hot pressing nor film formation was performed), after hot pressing, and after film formation.

なお、板状ワークの歪み量は、回転可能な定盤に板状ワークを載置し、板状ワークを回転させながら板状ワーク上面の変位を、ダイヤルゲージを用いて測定した。   The amount of distortion of the plate-like workpiece was measured by using a dial gauge to place the plate-like workpiece on a rotatable surface plate and rotating the plate-like workpiece while the plate-like workpiece was rotated.

アモルファス炭素膜の成膜前に、板状ワークにホットプレスを施した場合、初期の板状ワークに生じていた歪みを矯正することができ、かつ、成膜後の歪みの発生を防止できた(図17)。また、板状ワークにアモルファス炭素膜を成膜後、ホットプレスを施した場合、成膜によって板状ワークに生じた傘状の歪みを効果的に緩和することができた(図18)。この際、板状ワーク表面のアモルファス炭素膜は、酸化による劣化がなく、剥離や亀裂が生じることもなかった。   When hot pressing was performed on the plate-shaped workpiece before the amorphous carbon film was formed, the distortion that had occurred in the initial plate-shaped workpiece could be corrected, and the occurrence of distortion after film formation could be prevented. (FIG. 17). In addition, when hot pressing was performed after forming an amorphous carbon film on the plate-like workpiece, the umbrella-shaped distortion generated on the plate-like workpiece by the film formation could be effectively alleviated (FIG. 18). At this time, the amorphous carbon film on the surface of the plate-like workpiece did not deteriorate due to oxidation, and neither peeling nor cracking occurred.

11:成膜炉(チャンバー)
2a,2b,22,42:板状ワーク
3a,3b,23,43,53:ワーク固定具
230,430,530:保持具
31,32:ガスノズル
16:プラズマ電源
25:シース
100:プレス装置
11: Deposition furnace (chamber)
2a, 2b, 22, 42: Plate-like workpieces 3a, 3b, 23, 43, 53: Work fixtures 230, 430, 530: Holders 31, 32: Gas nozzle 16: Plasma power supply 25: Sheath 100: Press device

Claims (6)

プラズマCVD法によって導電性の板状ワークの表面にアモルファス炭素膜を形成するアモルファス炭素膜の成膜装置であって、
成膜炉と、
板状ワークを平行にかつ上下方向に積層状態で複数個保持し、該成膜炉の炉室内に等間隔でリング状に配置されかつマイナス極に結線された複数個のワーク固定具と、
リング状に配置された前記ワーク固定具の中心に少なくとも1個及び遠心方向側で等間隔にリング状に配置された複数個で構成され処理ガスを供給するノズルと、
少なくとも前記ワーク固定具に結線されたプラズマ電源と、
を具備することを特徴とするアモルファス炭素膜の成膜装置。
An amorphous carbon film forming apparatus for forming an amorphous carbon film on the surface of a conductive plate-like workpiece by plasma CVD,
A deposition furnace;
A plurality of workpiece fixtures that hold a plurality of plate workpieces in a stacked state in parallel and in the vertical direction, are arranged in a ring shape at equal intervals in the furnace chamber of the film forming furnace, and are connected to the negative electrode,
A nozzle configured to include at least one at the center of the work fixture arranged in a ring shape and a plurality arranged in a ring shape at equal intervals on the centrifugal direction side;
At least a plasma power source connected to the work fixture;
An amorphous carbon film forming apparatus comprising:
上下方向に隣接する2個の前記板状ワークの対向面間の間隔は、2〜30mmである請求項1記載のアモルファス炭素膜の成膜装置。   The amorphous carbon film forming apparatus according to claim 1, wherein an interval between opposing surfaces of the two plate-like workpieces adjacent in the vertical direction is 2 to 30 mm. 前記ワーク固定具は、前記板状ワークの少なくとも一部を保持する棒状の保持具を有する請求項1または2に記載のアモルファス炭素膜の成膜装置。   The amorphous carbon film forming apparatus according to claim 1, wherein the work fixture has a rod-like holder that holds at least a part of the plate-like work. 前記ワーク固定具は前記棒状の保持具を少なくとも3本有し、前記板状ワークは該保持具により少なくとも3か所保持される請求項3記載のアモルファス炭素膜の成膜装置。   The amorphous carbon film forming apparatus according to claim 3, wherein the work fixture has at least three rod-like holders, and the plate-like work is held by at least three places by the holders. 前記板状ワークは、リング状であって、前記ワーク固定具によりリング状の該板状ワークの内側部および/または外側部が保持される請求項1〜4のいずれか1つに記載のアモルファス炭素膜の成膜装置。   The said plate-shaped workpiece is ring-shaped, Comprising: The amorphous part as described in any one of Claims 1-4 with which the inner part and / or outer side part of this ring-shaped plate-shaped workpiece are hold | maintained by the said workpiece fixing tool. Carbon film deposition equipment. 前記板状ワークは、クラッチ板である請求項1〜5のいずれか1つに記載のアモルファス炭素膜の成膜装置。   The amorphous carbon film forming apparatus according to claim 1, wherein the plate-like workpiece is a clutch plate.
JP2009123347A 2003-02-12 2009-05-21 Amorphous carbon film deposition system Expired - Lifetime JP4999118B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009123347A JP4999118B2 (en) 2003-02-12 2009-05-21 Amorphous carbon film deposition system

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003033859 2003-02-12
JP2003033859 2003-02-12
JP2009123347A JP4999118B2 (en) 2003-02-12 2009-05-21 Amorphous carbon film deposition system

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2003379077A Division JP4330067B2 (en) 2003-02-12 2003-11-07 Method for forming amorphous carbon film

Publications (2)

Publication Number Publication Date
JP2009179885A true JP2009179885A (en) 2009-08-13
JP4999118B2 JP4999118B2 (en) 2012-08-15

Family

ID=32866249

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009123347A Expired - Lifetime JP4999118B2 (en) 2003-02-12 2009-05-21 Amorphous carbon film deposition system

Country Status (4)

Country Link
US (1) US7803433B2 (en)
EP (2) EP1598442B1 (en)
JP (1) JP4999118B2 (en)
WO (1) WO2004072322A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070014990A1 (en) * 2005-07-14 2007-01-18 Honeywell International Inc. Support structure for radiative heat transfer
DE102006032959B3 (en) * 2006-07-17 2007-12-27 JOH. WINKLHOFER & SÖHNE GMBH & Co. KG Workpiece support for a vacuum coating installation comprises a support body having radially protruding magnetic holding bodies with a holding surface for workpieces to be coated
JP5144562B2 (en) 2008-03-31 2013-02-13 日本碍子株式会社 DLC film mass production method
TW201020336A (en) * 2008-11-20 2010-06-01 Yu-Hsueh Lin Method for plating film on surface of heat dissipation module and film-plated heat dissipation module
FR3084892B1 (en) 2018-08-10 2020-11-06 Safran Ceram PROCESS FOR DENSIFICATION BY CHEMICAL INFILTRATION IN THE GASEOUS PHASE OF POROUS ANNULAR SUBSTRATES
CN109449073A (en) * 2018-09-29 2019-03-08 蚌埠市龙子湖区金力传感器厂 A kind of uniform sensor monocrystalline silicon etching device of reaction

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54160568A (en) * 1978-06-09 1979-12-19 Anelva Corp Thin film forming equipment for discharge chemical reaction
JPS6357770A (en) * 1986-08-29 1988-03-12 Citizen Watch Co Ltd Method for coating hard carbon film on surface of metallic substrate
JPS63150912A (en) * 1986-12-15 1988-06-23 Shin Etsu Handotai Co Ltd Formation of thin film and apparatus therefor
JPH0885876A (en) * 1994-08-17 1996-04-02 Korea Advanced Inst Of Sci Technol Apparatus for high-frequency plasma chemical vapor deposition and method of forming coating layer on circular substrate
JP2000054146A (en) * 1998-08-06 2000-02-22 Canon Inc Formation of deposited film and deposited film forming device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4926793A (en) * 1986-12-15 1990-05-22 Shin-Etsu Handotai Co., Ltd. Method of forming thin film and apparatus therefor
JP2594051B2 (en) * 1987-02-02 1997-03-26 東京エレクトロン株式会社 Plasma processing method
JPS63300512A (en) * 1987-05-30 1988-12-07 Komatsu Ltd Chemical vapor deposition apparatus
JPS6480023A (en) * 1987-09-21 1989-03-24 Kanegafuchi Chemical Ind Formation of thin film and apparatus therefor
JP2639569B2 (en) * 1988-09-16 1997-08-13 株式会社半導体エネルギー研究所 Plasma reaction method and plasma reaction apparatus
JP2790878B2 (en) * 1988-11-16 1998-08-27 治久 木下 Dry process equipment
US5052339A (en) * 1990-10-16 1991-10-01 Air Products And Chemicals, Inc. Radio frequency plasma enhanced chemical vapor deposition process and reactor
US5234963A (en) 1992-05-13 1993-08-10 Gaia Research Production of encapsulated chemical foaming concentrates
JP3471841B2 (en) 1993-03-04 2003-12-02 株式会社半導体エネルギー研究所 Diamond-like carbon film forming equipment
DE19608158C1 (en) * 1996-03-04 1997-08-28 Dresden Vakuumtech Gmbh Method and device for high-frequency plasma polymerization
SE517046C2 (en) * 1997-11-26 2002-04-09 Sandvik Ab Plasma-activated CVD method for coating fine-grained alumina cutting tools
DE60205449T2 (en) * 2001-12-25 2006-03-30 Toyoda Koki K.K., Kariya Clutch disc, friction clutch and clutch device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54160568A (en) * 1978-06-09 1979-12-19 Anelva Corp Thin film forming equipment for discharge chemical reaction
JPS6357770A (en) * 1986-08-29 1988-03-12 Citizen Watch Co Ltd Method for coating hard carbon film on surface of metallic substrate
JPS63150912A (en) * 1986-12-15 1988-06-23 Shin Etsu Handotai Co Ltd Formation of thin film and apparatus therefor
JPH0885876A (en) * 1994-08-17 1996-04-02 Korea Advanced Inst Of Sci Technol Apparatus for high-frequency plasma chemical vapor deposition and method of forming coating layer on circular substrate
JP2000054146A (en) * 1998-08-06 2000-02-22 Canon Inc Formation of deposited film and deposited film forming device

Also Published As

Publication number Publication date
EP1598442A1 (en) 2005-11-23
EP2703521A1 (en) 2014-03-05
EP2703521B1 (en) 2016-11-16
US7803433B2 (en) 2010-09-28
EP1598442B1 (en) 2017-08-02
JP4999118B2 (en) 2012-08-15
US20080317976A1 (en) 2008-12-25
WO2004072322A1 (en) 2004-08-26
EP1598442A4 (en) 2012-12-19

Similar Documents

Publication Publication Date Title
JP4999118B2 (en) Amorphous carbon film deposition system
JP4330067B2 (en) Method for forming amorphous carbon film
JP4358509B2 (en) Diamond coating on reaction chamber wall and method for producing the same
EP0073643B1 (en) Sputtering apparatus
JP5380263B2 (en) Ion beam generator
CN1928152B (en) Vapor phase growth device
JP2006041496A (en) Multi-selection end effector assembly
US10000850B2 (en) Deposition method and method of manufacturing a catalyst wire for a catalytic chemical vapor deposition apparatus
TWI577820B (en) Means for improving MOCVD reaction method and improvement method thereof
JP4318504B2 (en) Deposition equipment substrate tray
US8808812B2 (en) Oriented carbon nanotube manufacturing method
TWI597376B (en) Processing arrangement with temperature conditioning arrangement and method of processing a substrate
JP2006306704A (en) Method of forming carbon film and carbon film
KR101631796B1 (en) Manufacturing device for focus ring of dry etching apparatus
JP4519625B2 (en) Deposited film forming equipment
JP5530962B2 (en) Carbon film forming apparatus and carbon film forming method
JP5155579B2 (en) Method for manufacturing mold press mold and method for manufacturing glass optical element
JP2013247150A (en) Plasma processing apparatus
JP3259452B2 (en) Electrode used for plasma CVD apparatus and plasma CVD apparatus
JP2013105831A (en) Vapor growth device
JP4505366B2 (en) Method for forming amorphous carbon film
US20240105488A1 (en) Electrostatic chuck assembly
KR20200065605A (en) DC power plasma CVD diamond growth apparatus
JP2020066763A (en) Substrate holding mechanism, deposition device and deposition method for polycrystalline film
JPS58136764A (en) Formation of boron film

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090521

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090608

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110912

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120510

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120511

R150 Certificate of patent or registration of utility model

Ref document number: 4999118

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150525

Year of fee payment: 3

EXPY Cancellation because of completion of term