JP2009179885A - アモルファス炭素膜の成膜装置 - Google Patents
アモルファス炭素膜の成膜装置 Download PDFInfo
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- 229910003481 amorphous carbon Inorganic materials 0.000 title claims abstract description 79
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 4
- 238000009826 distribution Methods 0.000 abstract description 10
- 239000000203 mixture Substances 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 148
- 239000007789 gas Substances 0.000 description 58
- 230000015572 biosynthetic process Effects 0.000 description 33
- 238000000034 method Methods 0.000 description 27
- 238000007731 hot pressing Methods 0.000 description 15
- 125000006850 spacer group Chemical group 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 229910000975 Carbon steel Inorganic materials 0.000 description 10
- 239000010962 carbon steel Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 210000000078 claw Anatomy 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000009466 transformation Effects 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 229910001315 Tool steel Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000013078 crystal Chemical group 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
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- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
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- 230000007613 environmental effect Effects 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Abstract
【解決手段】本発明のアモルファス炭素膜の成膜装置は、成膜炉11と、板状ワーク22を平行にかつ上下方向に隣接する2個の板状ワーク22の対向面間の間隔を2〜30mmの範囲で上下方向に積層状態で複数個保持し成膜炉11の炉室内に等間隔でリング状に配置されかつマイナス極に通電された複数個のワーク固定具23と、リング状に配置されたワーク固定具23の中心に1個以上および遠心方向側で等間隔にリング状に配置された複数個で構成され供給ガスを供給するノズル31,32と、少なくともワーク固定具23に結線されたプラズマ電源16と、を具備する。板状ワークがワーク固定具に上下方向に積層状態で複数個保持されるので、成膜面積が大幅に増加する。また、膜分布・膜組成の不均一分布を抑制し、全ての板状ワークに均一に成膜することができる。
【選択図】図1
Description
本発明のアモルファス炭素膜の成膜装置の説明に先立って、アモルファス炭素膜の成膜方法を説明する。アモルファス炭素膜の成膜方法は、プラズマCVD法(より具体的には、直流プラズマCVD法、高周波プラズマCVD法など)によって導電性の板状ワークの表面にアモルファス炭素膜を形成するアモルファス炭素膜の成膜方法である。
本発明のアモルファス炭素膜の成膜装置は、プラズマCVD法によって導電性の板状ワークの表面にアモルファス炭素膜を形成するアモルファス炭素膜の成膜装置であり、成膜炉と、板状ワークを固定するワーク固定具と、処理ガスを供給するノズルと、少なくともワーク固定具に結線されたプラズマ電源とを具備する。
本実施例のアモルファス炭素膜の成膜装置は、円筒状でステンレス製のチャンバー11を成膜炉として用い、排気通路12によりチャンバー11と連通する排気系13を有する。排気系13は、油回転ポンプ、メカニカルブースターポンプ、油拡散ポンプからなり、排気通路12に配した排気調整バルブ15を開閉することによりチャンバー11内の処理圧力を調整する。また、チャンバー11には、透光窓18を設け、透光窓18を介して赤外線放射温度計(図示せず)によりワーク22の表面温度を測定する。
実施例1の成膜装置において、ワーク間隔を10mm(板状ワーク、合計500枚)とした。また、成膜中のガス圧、シース幅は、表1の通りである。
実施例1の成膜装置において、ワーク間隔を3mm(板状ワーク、合計600枚)とした。また、成膜中のガス圧、シース幅は、表1の通りである。
実施例1の成膜装置において、ワーク間隔を2mm(板状ワーク、合計750枚)とした。また、成膜中のガス圧、シース幅は、表1の通りである。なお、ワーク間隔が2mmの場合、最大2500枚の板状ワークを装置内に固定できるが、板状ワークの枚数が多すぎるとプラズマ電源出力が不足し、ワーク全体にシースが形成できないため、750枚とした。
実施例1の成膜装置において、ワーク間隔を1mm(板状ワーク、合計500枚)とした。また、成膜中のガス圧、シース幅は、表1の通りである。
実施例1の成膜装置において、陰極20の板状ワーク22、ワーク固定具23を以下に説明する板状ワーク42、ワーク固定具43(図5)とした。
実施例1の成膜装置において、ワーク固定具23を、以下に説明するワーク固定具53(図7、図8)とした。
図17は、アモルファス炭素膜の成膜前にホットプレスを施した板状ワーク(実施例2の板状ワーク22に相当)の歪み量の変化を示すグラフである。また、図18は、アモルファス炭素膜の成膜後にホットプレスを施した板状ワーク(実施例5の板状ワーク42に相当)の歪み量の変化を示すグラフである。板状ワークの歪み量は、それぞれ初期(ホットプレスも成膜も行われていない状態)、ホットプレス後、成膜後に測定した。
2a,2b,22,42:板状ワーク
3a,3b,23,43,53:ワーク固定具
230,430,530:保持具
31,32:ガスノズル
16:プラズマ電源
25:シース
100:プレス装置
Claims (6)
- プラズマCVD法によって導電性の板状ワークの表面にアモルファス炭素膜を形成するアモルファス炭素膜の成膜装置であって、
成膜炉と、
板状ワークを平行にかつ上下方向に積層状態で複数個保持し、該成膜炉の炉室内に等間隔でリング状に配置されかつマイナス極に結線された複数個のワーク固定具と、
リング状に配置された前記ワーク固定具の中心に少なくとも1個及び遠心方向側で等間隔にリング状に配置された複数個で構成され処理ガスを供給するノズルと、
少なくとも前記ワーク固定具に結線されたプラズマ電源と、
を具備することを特徴とするアモルファス炭素膜の成膜装置。 - 上下方向に隣接する2個の前記板状ワークの対向面間の間隔は、2〜30mmである請求項1記載のアモルファス炭素膜の成膜装置。
- 前記ワーク固定具は、前記板状ワークの少なくとも一部を保持する棒状の保持具を有する請求項1または2に記載のアモルファス炭素膜の成膜装置。
- 前記ワーク固定具は前記棒状の保持具を少なくとも3本有し、前記板状ワークは該保持具により少なくとも3か所保持される請求項3記載のアモルファス炭素膜の成膜装置。
- 前記板状ワークは、リング状であって、前記ワーク固定具によりリング状の該板状ワークの内側部および/または外側部が保持される請求項1〜4のいずれか1つに記載のアモルファス炭素膜の成膜装置。
- 前記板状ワークは、クラッチ板である請求項1〜5のいずれか1つに記載のアモルファス炭素膜の成膜装置。
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US20070014990A1 (en) * | 2005-07-14 | 2007-01-18 | Honeywell International Inc. | Support structure for radiative heat transfer |
DE102006032959B3 (de) * | 2006-07-17 | 2007-12-27 | JOH. WINKLHOFER & SÖHNE GMBH & Co. KG | Werkstückträger für Vakuumbeschichtungsanlagen mit magnetischen Aufnahmekörpern |
JP5144562B2 (ja) * | 2008-03-31 | 2013-02-13 | 日本碍子株式会社 | Dlc膜量産方法 |
TW201020336A (en) * | 2008-11-20 | 2010-06-01 | Yu-Hsueh Lin | Method for plating film on surface of heat dissipation module and film-plated heat dissipation module |
FR3084892B1 (fr) | 2018-08-10 | 2020-11-06 | Safran Ceram | Procede de densification par infiltration chimique en phase gazeuse de substrats annulaire poreux |
CN109449073A (zh) * | 2018-09-29 | 2019-03-08 | 蚌埠市龙子湖区金力传感器厂 | 一种反应均匀的传感器单晶硅刻蚀装置 |
US11898248B2 (en) * | 2019-12-18 | 2024-02-13 | Jiangsu Favored Nanotechnology Co., Ltd. | Coating apparatus and coating method |
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