WO2004072322A1 - アモルファス炭素膜の成膜方法および成膜装置 - Google Patents

アモルファス炭素膜の成膜方法および成膜装置 Download PDF

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Publication number
WO2004072322A1
WO2004072322A1 PCT/JP2004/001482 JP2004001482W WO2004072322A1 WO 2004072322 A1 WO2004072322 A1 WO 2004072322A1 JP 2004001482 W JP2004001482 W JP 2004001482W WO 2004072322 A1 WO2004072322 A1 WO 2004072322A1
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WIPO (PCT)
Prior art keywords
film forming
amorphous carbon
work fixing
fixing tools
annularly disposed
Prior art date
Application number
PCT/JP2004/001482
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English (en)
French (fr)
Inventor
Junji Ando
Naoyuki Sakai
Toshiyuki Saito
Kazuyuki Nakanishi
Hiroyuki Mori
Hideo Tachikawa
Kyouji Itou
Mikio Fujioka
Yoshiyuki Funaki
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Toyoda Koki Kabushiki Kaisha
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Publication date
Application filed by Toyoda Koki Kabushiki Kaisha filed Critical Toyoda Koki Kabushiki Kaisha
Priority to US10/544,674 priority Critical patent/US7803433B2/en
Priority to EP04710480.7A priority patent/EP1598442B1/en
Publication of WO2004072322A1 publication Critical patent/WO2004072322A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/272—Diamond only using DC, AC or RF discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16D—COUPLINGS FOR TRANSMITTING ROTATION; CLUTCHES; BRAKES
    • F16D13/00—Friction clutches
    • F16D13/58—Details
    • F16D13/60—Clutching elements
    • F16D13/64—Clutch-plates; Clutch-lamellae
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/32779—Continuous moving of batches of workpieces
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16D—COUPLINGS FOR TRANSMITTING ROTATION; CLUTCHES; BRAKES
    • F16D2250/00—Manufacturing; Assembly
    • F16D2250/0038—Surface treatment
    • F16D2250/0046—Coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Combustion & Propulsion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

本発明のアモルファス炭素膜の成膜装置は、成膜炉11と、板状ワーク22を平行にかつ上下方向に隣接する2個の板状ワーク22の対向面間の間隔を2～30mmの範囲で上下方向に積層状態で複数個保持し成膜炉11の炉室内に等間隔でリング状に配置されかつマイナス極に通電された複数個のワーク固定具23と、リング状に配置されたワーク固定具23の中心に1個以上および遠心方向側で等間隔にリング状に配置された複数個で構成され供給ガスを供給するノズル31,32と、少なくともワーク固定具23に結線されたプラズマ電源16とを具備することを特徴とする。供給ガス圧力の範囲を13～1330Paとしシース幅を2～30mmとなるようにプラズマ電源を操作することで、安定した放電が得られる。これにより、低コストでアモルファス炭素膜を効率よく成膜することができる。
PCT/JP2004/001482 2003-02-12 2004-02-12 アモルファス炭素膜の成膜方法および成膜装置 WO2004072322A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/544,674 US7803433B2 (en) 2003-02-12 2004-02-12 Amorphous carbon film forming method and device
EP04710480.7A EP1598442B1 (en) 2003-02-12 2004-02-12 Amorphous carbon film forming method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003033859 2003-02-12
JP2003/033859 2003-02-12

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Publication Number Publication Date
WO2004072322A1 true WO2004072322A1 (ja) 2004-08-26

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PCT/JP2004/001482 WO2004072322A1 (ja) 2003-02-12 2004-02-12 アモルファス炭素膜の成膜方法および成膜装置

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Country Link
US (1) US7803433B2 (ja)
EP (2) EP1598442B1 (ja)
JP (1) JP4999118B2 (ja)
WO (1) WO2004072322A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007011581A1 (en) * 2005-07-14 2007-01-25 Honeywell International Inc. Improved support structure for radiative heat transfer

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DE102006032959B3 (de) * 2006-07-17 2007-12-27 JOH. WINKLHOFER & SÖHNE GMBH & Co. KG Werkstückträger für Vakuumbeschichtungsanlagen mit magnetischen Aufnahmekörpern
JP5144562B2 (ja) * 2008-03-31 2013-02-13 日本碍子株式会社 Ｄｌｃ膜量産方法
TW201020336A (en) * 2008-11-20 2010-06-01 Yu-Hsueh Lin Method for plating film on surface of heat dissipation module and film-plated heat dissipation module
FR3084892B1 (fr) 2018-08-10 2020-11-06 Safran Ceram Procede de densification par infiltration chimique en phase gazeuse de substrats annulaire poreux
CN109449073A (zh) * 2018-09-29 2019-03-08 蚌埠市龙子湖区金力传感器厂 一种反应均匀的传感器单晶硅刻蚀装置
US11898248B2 (en) * 2019-12-18 2024-02-13 Jiangsu Favored Nanotechnology Co., Ltd. Coating apparatus and coating method

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JPS6480023A (en) * 1987-09-21 1989-03-24 Kanegafuchi Chemical Ind Formation of thin film and apparatus therefor
JPH0280579A (ja) * 1988-09-16 1990-03-20 Semiconductor Energy Lab Co Ltd プラズマ反応方法およびプラズマ反応装置
JPH0625874A (ja) * 1988-11-16 1994-02-01 Haruhisa Kinoshita ドライプロセス装置
JPH06256957A (ja) * 1993-03-04 1994-09-13 Semiconductor Energy Lab Co Ltd ダイヤモンド状炭素薄膜形成装置
US5611962A (en) 1992-05-13 1997-03-18 Gaia Research Production of encapsulated chemical foaming concentrates
EP0794014A1 (de) * 1996-03-04 1997-09-10 VTD Vakuumtechnik Dresden GmbH Verfahren und Einrichtung zur Hochfrequenz-Plasmapolymerisation
JP2001524391A (ja) * 1997-11-26 2001-12-04 サンドビック アクティエボラーグ（プブル） 切削工具上に微細結晶粒アルミナを堆積する方法

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JPS6480023A (en) * 1987-09-21 1989-03-24 Kanegafuchi Chemical Ind Formation of thin film and apparatus therefor
JPH0280579A (ja) * 1988-09-16 1990-03-20 Semiconductor Energy Lab Co Ltd プラズマ反応方法およびプラズマ反応装置
JPH0625874A (ja) * 1988-11-16 1994-02-01 Haruhisa Kinoshita ドライプロセス装置
US5611962A (en) 1992-05-13 1997-03-18 Gaia Research Production of encapsulated chemical foaming concentrates
JPH06256957A (ja) * 1993-03-04 1994-09-13 Semiconductor Energy Lab Co Ltd ダイヤモンド状炭素薄膜形成装置
EP0794014A1 (de) * 1996-03-04 1997-09-10 VTD Vakuumtechnik Dresden GmbH Verfahren und Einrichtung zur Hochfrequenz-Plasmapolymerisation
JP2001524391A (ja) * 1997-11-26 2001-12-04 サンドビック アクティエボラーグ（プブル） 切削工具上に微細結晶粒アルミナを堆積する方法

Non-Patent Citations (1)

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Title
See also references of EP1598442A4

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007011581A1 (en) * 2005-07-14 2007-01-25 Honeywell International Inc. Improved support structure for radiative heat transfer

Also Published As

Publication number Publication date
JP2009179885A (ja) 2009-08-13
EP1598442A1 (en) 2005-11-23
US20080317976A1 (en) 2008-12-25
EP2703521B1 (en) 2016-11-16
EP1598442A4 (en) 2012-12-19
JP4999118B2 (ja) 2012-08-15
EP2703521A1 (en) 2014-03-05
US7803433B2 (en) 2010-09-28
EP1598442B1 (en) 2017-08-02

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