WO2004107394A3 - プラズマ処理装置、プラズマ生成用の反応器の製造方法、及びプラズマ処理方法 - Google Patents

プラズマ処理装置、プラズマ生成用の反応器の製造方法、及びプラズマ処理方法 Download PDF

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Publication number
WO2004107394A3
WO2004107394A3 PCT/JP2004/007598 JP2004007598W WO2004107394A3 WO 2004107394 A3 WO2004107394 A3 WO 2004107394A3 JP 2004007598 W JP2004007598 W JP 2004007598W WO 2004107394 A3 WO2004107394 A3 WO 2004107394A3
Authority
WO
WIPO (PCT)
Prior art keywords
plasma processing
plasma
holes
insulating plate
electrode plates
Prior art date
Application number
PCT/JP2004/007598
Other languages
English (en)
French (fr)
Other versions
WO2004107394A2 (ja
Inventor
Tetsuji Shibata
Keiichi Yamazaki
Noriyuki Taguchi
Yasushi Sawada
Original Assignee
Matsushita Electric Works Ltd
Tetsuji Shibata
Keiichi Yamazaki
Noriyuki Taguchi
Yasushi Sawada
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd, Tetsuji Shibata, Keiichi Yamazaki, Noriyuki Taguchi, Yasushi Sawada filed Critical Matsushita Electric Works Ltd
Priority to US10/529,861 priority Critical patent/US7543546B2/en
Priority to DE112004000057T priority patent/DE112004000057B4/de
Publication of WO2004107394A2 publication Critical patent/WO2004107394A2/ja
Publication of WO2004107394A3 publication Critical patent/WO2004107394A3/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3325—Problems associated with coating large area

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning In General (AREA)
  • Chemical Vapour Deposition (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
PCT/JP2004/007598 2003-05-27 2004-05-26 プラズマ処理装置、プラズマ生成用の反応器の製造方法、及びプラズマ処理方法 WO2004107394A2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/529,861 US7543546B2 (en) 2003-05-27 2004-05-26 Plasma processing apparatus, method for producing reaction vessel for plasma generation, and plasma processing method
DE112004000057T DE112004000057B4 (de) 2003-05-27 2004-05-26 Plasmabehandlungsapparat und Plasmabehandlungsverfahren

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003-149961 2003-05-27
JP2003149961 2003-05-27
JP2003330351 2003-09-22
JP2003-330351 2003-09-22

Publications (2)

Publication Number Publication Date
WO2004107394A2 WO2004107394A2 (ja) 2004-12-09
WO2004107394A3 true WO2004107394A3 (ja) 2005-04-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2004/007598 WO2004107394A2 (ja) 2003-05-27 2004-05-26 プラズマ処理装置、プラズマ生成用の反応器の製造方法、及びプラズマ処理方法

Country Status (6)

Country Link
US (1) US7543546B2 (ja)
JP (1) JP2010050106A (ja)
KR (1) KR100623563B1 (ja)
DE (1) DE112004000057B4 (ja)
TW (1) TWI244673B (ja)
WO (1) WO2004107394A2 (ja)

Families Citing this family (126)

* Cited by examiner, † Cited by third party
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