JPS6480023A - Formation of thin film and apparatus therefor - Google Patents

Formation of thin film and apparatus therefor

Info

Publication number
JPS6480023A
JPS6480023A JP23696587A JP23696587A JPS6480023A JP S6480023 A JPS6480023 A JP S6480023A JP 23696587 A JP23696587 A JP 23696587A JP 23696587 A JP23696587 A JP 23696587A JP S6480023 A JPS6480023 A JP S6480023A
Authority
JP
Japan
Prior art keywords
substrates
bar
thin film
bell jar
shaped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23696587A
Other languages
Japanese (ja)
Inventor
Takehisa Nakayama
Takashi Fujiwara
Masahiko Hosomi
Kenji Yamamoto
Yoshihisa Owada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanegafuchi Chemical Industry Co Ltd
Original Assignee
Kanegafuchi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanegafuchi Chemical Industry Co Ltd filed Critical Kanegafuchi Chemical Industry Co Ltd
Priority to JP23696587A priority Critical patent/JPS6480023A/en
Publication of JPS6480023A publication Critical patent/JPS6480023A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

PURPOSE:To form a thin film on bar-shaped substrates by applying, within a bell jar, a high-frequency or/and DC power between the bar-shaped substrates becoming a plurality of electrodes, thereby producing a discharge between the bar-shaped substrates. CONSTITUTION:One end of bar-shaped substrates 5, 6 is inserted into the inser tion holes 3a, 4a of metallic holders 3, 4 so as to be substantially vertical to the holders 3, 4. Side boards 2 are set in a bell jar 1 so that the substrates 5, 6 become horizontal and the adjacent substrates 5, 6 are spaced at equal intervals. When a predetermined vacuum pressure is achieved within the bell jar, a raw gas is supplied. A high-frequency voltage or DC voltage is applied to the substrates 5, 6. A discharge is caused between the adjacent substrates 5, 6 and the raw gas is plasma decomposed, whereby a thin film is deposited on the surface of the substrates 5, 6.
JP23696587A 1987-09-21 1987-09-21 Formation of thin film and apparatus therefor Pending JPS6480023A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23696587A JPS6480023A (en) 1987-09-21 1987-09-21 Formation of thin film and apparatus therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23696587A JPS6480023A (en) 1987-09-21 1987-09-21 Formation of thin film and apparatus therefor

Publications (1)

Publication Number Publication Date
JPS6480023A true JPS6480023A (en) 1989-03-24

Family

ID=17008389

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23696587A Pending JPS6480023A (en) 1987-09-21 1987-09-21 Formation of thin film and apparatus therefor

Country Status (1)

Country Link
JP (1) JPS6480023A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5225375A (en) * 1991-05-20 1993-07-06 Process Technology (1988) Limited Plasma enhanced chemical vapor processing of semiconductor substrates
JP2002093722A (en) * 2000-09-14 2002-03-29 Mitsubishi Electric Corp Plasma cvd system, method of forming thin film and method of manufacturing solar cell
WO2004072322A1 (en) * 2003-02-12 2004-08-26 Toyoda Koki Kabushiki Kaisha Amorphous carbon film forming method and device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5225375A (en) * 1991-05-20 1993-07-06 Process Technology (1988) Limited Plasma enhanced chemical vapor processing of semiconductor substrates
JP2002093722A (en) * 2000-09-14 2002-03-29 Mitsubishi Electric Corp Plasma cvd system, method of forming thin film and method of manufacturing solar cell
WO2004072322A1 (en) * 2003-02-12 2004-08-26 Toyoda Koki Kabushiki Kaisha Amorphous carbon film forming method and device
EP1598442A1 (en) * 2003-02-12 2005-11-23 Toyoda Koki Kabushiki Kaisha Amorphous carbon film forming method and device
US7803433B2 (en) 2003-02-12 2010-09-28 Jtekt Corporation Amorphous carbon film forming method and device
EP1598442A4 (en) * 2003-02-12 2012-12-19 Jtekt Corp Amorphous carbon film forming method and device
EP2703521A1 (en) * 2003-02-12 2014-03-05 Jtekt Corporation Forming method and apparatus for amorphous carbon films

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