JPS648261A - Formation of thin organic film - Google Patents
Formation of thin organic filmInfo
- Publication number
- JPS648261A JPS648261A JP16378487A JP16378487A JPS648261A JP S648261 A JPS648261 A JP S648261A JP 16378487 A JP16378487 A JP 16378487A JP 16378487 A JP16378487 A JP 16378487A JP S648261 A JPS648261 A JP S648261A
- Authority
- JP
- Japan
- Prior art keywords
- vessel
- org
- substrate
- frequency
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To form a thin org. film of good coating at a high deposition speed by imposing a substrate material on a grounding electrode, mounting an org. target to a high-frequency impressing electrode and specifying the pressure of an inert gas in a vessel to a specific range. CONSTITUTION:The substrate 1 is imposed on the grounding electrode 2 provided in the vessel 8 and the surface of the high-frequency impressing electrode 4 opposite thereto is covered by the target 3 consisting of an org. material such as heat resistant polyphenylene sulfide. The inert gas such as argon is introduced from an introducing hole 6 into the vessel 8 and is discharged at a specified rate from a discharge hole 7. The pressure in the vessel 8 is maintained in a 30mTorr-1Torr range. The high frequency is impressed between the two electrodes 2 and 4 to generate an electric discharge in the vessel 8. The thin org. film is deposited at the high deposition speed on the substrate 1 as sputtering progresses.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16378487A JPS648261A (en) | 1987-06-30 | 1987-06-30 | Formation of thin organic film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16378487A JPS648261A (en) | 1987-06-30 | 1987-06-30 | Formation of thin organic film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS648261A true JPS648261A (en) | 1989-01-12 |
Family
ID=15780644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16378487A Pending JPS648261A (en) | 1987-06-30 | 1987-06-30 | Formation of thin organic film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS648261A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004077539A1 (en) * | 2003-02-28 | 2004-09-10 | Fujitsu Limited | Etching resistant film, process for producing the same, surface cured resist pattern, process for producing the same, semiconductor device and process for producing the same |
-
1987
- 1987-06-30 JP JP16378487A patent/JPS648261A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004077539A1 (en) * | 2003-02-28 | 2004-09-10 | Fujitsu Limited | Etching resistant film, process for producing the same, surface cured resist pattern, process for producing the same, semiconductor device and process for producing the same |
| EP1598858A1 (en) * | 2003-02-28 | 2005-11-23 | Fujitsu Limited | Etching resistant film, process for producing the same, surface cured resist pattern, process for producing the same, semiconductor device and process for producing the same |
| EP1598858B1 (en) * | 2003-02-28 | 2014-04-09 | Fujitsu Limited | Process for producing etching resistant film, surface cured resist pattern, process for producing surface modified resist pattern, and process for producing semiconductor device |
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