TW201319298A - Vacuum coating apparatus - Google Patents
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- TW201319298A TW201319298A TW101130429A TW101130429A TW201319298A TW 201319298 A TW201319298 A TW 201319298A TW 101130429 A TW101130429 A TW 101130429A TW 101130429 A TW101130429 A TW 101130429A TW 201319298 A TW201319298 A TW 201319298A
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- 238000001771 vacuum deposition Methods 0.000 title claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 91
- 238000000576 coating method Methods 0.000 claims abstract description 66
- 239000011248 coating agent Substances 0.000 claims abstract description 59
- 238000000034 method Methods 0.000 claims abstract description 39
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 14
- 229910002804 graphite Inorganic materials 0.000 claims description 14
- 239000010439 graphite Substances 0.000 claims description 14
- 238000012545 processing Methods 0.000 claims description 10
- 238000000605 extraction Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 abstract description 36
- 238000012423 maintenance Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 6
- 238000011161 development Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000000265 homogenisation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
本發明係有關於一種真空塗佈設備,其具有一可抽真空的塗佈室,在該塗佈室內設有一基材載具用來固持一待塗佈的基材、具有一在該基材載具上方的電極、具有一相反電極、及具有一氣體給送件,其具有至少一氣體出口開口,用來將處理氣體給送於該基材的方向上。 The present invention relates to a vacuum coating apparatus having an evacuatable coating chamber in which a substrate carrier is provided for holding a substrate to be coated, and having a substrate on the substrate The electrode above the carrier, having an opposite electrode, and having a gas feed member having at least one gas outlet opening for feeding a process gas in the direction of the substrate.
此種真空塗佈設備原則上是已知的(例如,美國專利第US 6,626,186 B1號)。它們被使用在許多塗佈工作中。這可以是例如一CVD(化學氣相沉積)方法或一PECVD(電漿強化的化學氣相沉積)方法。在後者的例子中,該RF電壓被施加在該電極和該相反電極之間,其結果為,一電漿被產生。此等方法例如被使用在太陽能電池的製造,例如用以施加一氮化物塗層來將太陽能電池的表面鈍態化。 Such a vacuum coating apparatus is known in principle (for example, U.S. Patent No. 6,626,186 B1). They are used in many coating jobs. This can be, for example, a CVD (Chemical Vapor Deposition) method or a PECVD (plasma enhanced chemical vapor deposition) method. In the latter example, the RF voltage is applied between the electrode and the opposite electrode, with the result that a plasma is produced. Such methods are used, for example, in the fabrication of solar cells, for example to apply a nitride coating to passivate the surface of a solar cell.
此處理的一個問題是該處理的清潔操作,用以施加一定厚度的無污染塗層於該基材表面上,該塗層要儘可能均勻。該塗佈結果在此受到數種處理參數的影響,譬如該反應氣體的氣體組成、該待塗佈的基材的溫度、該塗佈室內的溫度、介於該電極和該相反電極之間的距離、所施加的電壓或頻率、該處理氣體的流動輪廓、及其它參數。 One problem with this process is the cleaning operation of the process to apply a non-contaminating coating of a certain thickness to the surface of the substrate which is as uniform as possible. The coating result is hereby influenced by several processing parameters, such as the gas composition of the reaction gas, the temperature of the substrate to be coated, the temperature within the coating chamber, between the electrode and the opposite electrode. Distance, applied voltage or frequency, flow profile of the process gas, and other parameters.
即使是相關的處理參數通常可被自動地控制,但仍有以各種方式偏離的處理及不均勻的塗層,而這會導致退貨。 Even if the relevant processing parameters are usually automatically controlled, there are still treatments and uneven coatings that deviate in various ways, which can result in returns.
德國專利第DE 10 2008 026 000 A1揭露一種真空塗佈設備,在該設備中一第一處理氣體被引入到該真空室內的一基材的待塗佈的表面的整個寬度上、一第二處理氣體被引入到該真空室中該基材的窄側邊的區域內、及在塗佈期間,處理氣體藉由抽吸而從該基材的窄側邊被抽離。 German Patent No. DE 10 2008 026 000 A1 discloses a vacuum coating apparatus in which a first process gas is introduced into the entire width of a surface of a substrate to be coated in the vacuum chamber, a second treatment Gas is introduced into the vacuum chamber in the region of the narrow side of the substrate, and during coating, the process gas is withdrawn from the narrow side of the substrate by suction.
然而,這只關於一種用不同的處理氣體來支持真空的方法,並沒有涉及該塗佈處理被一介於一電極和一相反電極之間的電場支持。相關的真空室被設計來用於一連續的處理,其使用線性的磁控管濺射來源形式的塗佈來源。 However, this is only concerned with a method of supporting a vacuum with a different process gas, and does not involve that the coating process is supported by an electric field between an electrode and an opposite electrode. The associated vacuum chamber is designed for a continuous process that uses a coating source in the form of a linear magnetron sputtering source.
有鑑於此,本發明係有關於揭示一種真空塗佈設備的目的,其中該塗佈處理可以用實質上沒有污染的方式比之前的設計更均勻地被實施且具有高穩定性。再者,一種改善的真空塗佈方法被揭示,其在給送處理氣體之下使用一電壓於一電極和一相反電極之間,該方法允許該處理均勻且穩定地實施。 In view of this, the present invention is directed to the object of revealing a vacuum coating apparatus in which the coating treatment can be carried out more uniformly and with higher stability than the previous design in a manner substantially free of contamination. Furthermore, an improved vacuum coating process is disclosed which uses a voltage between an electrode and an opposite electrode under the feed of process gas, which allows the process to be performed uniformly and stably.
此目的可根據本發明在本文開頭時提到的真空塗佈設備類型的例子中被達成,因為一介於該基材載具和該被相反地設置的電極之間的距離是可改變的。 This object can be achieved in accordance with the invention in the example of the type of vacuum coating apparatus mentioned at the outset, since the distance between the substrate carrier and the oppositely disposed electrode can be varied.
本發明的目的以此方式被完全達成。 The object of the invention is fully achieved in this way.
有鑑於在傳統的真空塗佈方法中,介於該電極和該相反電極之間的距離係被固定不變地界定,在依據本發明的真空塗佈方法中,介於該基材載具(其上固持著該基材)和 該電極之間的距離是可改變的。藉由改變介於該基材載具(或相反電極)和該電極之間的距離,該塗佈處理可被調整至不同的條件。在許多塗佈循環期間被改變的條件可被列入考量且在這段時間內偏離的塗佈處理可藉由改變介於該電極和該相反電極之間的距離來加以穩定。 In view of the conventional vacuum coating method, the distance between the electrode and the opposite electrode is fixedly defined, and in the vacuum coating method according to the present invention, the substrate carrier is interposed ( Holding the substrate thereon) and The distance between the electrodes is changeable. The coating process can be adjusted to different conditions by varying the distance between the substrate carrier (or opposite electrode) and the electrode. Conditions that are altered during many coating cycles can be considered and the coating process that deviates during this time can be stabilized by varying the distance between the electrode and the opposite electrode.
依據本發明的真空塗佈設備較佳地係以批次方式來操作。操作方式可以是例如一PECVD方法或一CVD方法。 The vacuum coating apparatus according to the present invention is preferably operated in a batch manner. The mode of operation can be, for example, a PECVD method or a CVD method.
在本發明的一種開發中,一昇降裝置被設置,該基材載具可用此昇降裝置來活動。 In one development of the invention, a lifting device is provided and the substrate carrier can be moved by the lifting device.
雖然原則上讓該電極可垂直地調整是可能的,但在該基材載具用一昇降裝置來調整的例子中,一有利的實施例特別是在該真空塗佈設備被建構成具有兩個空間(plane),其中一個空間設置在另一個空間上方、該基材載具可被該昇降裝置移動於兩個空間之間的組態中被達成的,用以用此方式以批次方式達到更佳的產量。較佳地,在此例子中,上面的空間被用於塗佈,而下面的空間係用作為已完全被塗佈的基材的一暫存區且配合一適當的搬運裝置可允許增加產量。 Although it is possible in principle to allow the electrode to be vertically adjusted, in an example in which the substrate carrier is adjusted by a lifting device, an advantageous embodiment is particularly constructed in that the vacuum coating apparatus is constructed to have two A plane in which one of the spaces is disposed above another space and the substrate carrier is movable by the lifting device between the two spaces for reaching in batches in this manner Better yield. Preferably, in this example, the upper space is used for coating, and the space below is used as a temporary storage area for the fully coated substrate and with a suitable handling device to allow for increased throughput.
在本發明的一有利的開發中,介於該電極和該基材載具之間的距離被自動地調整,較佳地可用一控制器依據至少一塗佈參數來設定。 In an advantageous development of the invention, the distance between the electrode and the substrate carrier is automatically adjusted, preferably by a controller in accordance with at least one coating parameter.
以此方式,一種該相反電極和該電極之間的距離有自動控制之改善的處理可被達成。 In this way, a process in which the distance between the opposite electrode and the electrode is automatically controlled can be achieved.
本發明的目的亦可藉由一種有一電壓被施加在一被設 置成與一基材相對的電極和一相反電極之間、有處理氣體給送至該塗佈室內之用於真空塗佈基材的方法來達成,其中一介於該電極和該相反電極之間的距離被設定,其較佳地係依據至少一處理參數被自動地設定。 The object of the present invention can also be applied to a set by a voltage A method for vacuum coating a substrate between an electrode opposite to a substrate and an opposite electrode and having a processing gas fed to the coating chamber, wherein one is between the electrode and the opposite electrode The distance is set, which is preferably automatically set in accordance with at least one processing parameter.
如上文中提到的,此方法允許該處理更均勻的實施以具有特別高的品質。 As mentioned above, this method allows the treatment to be more evenly implemented to have a particularly high quality.
在此方法的一有利的開發中,處理氣體在此處係透過該電極中的多個氣體出口開口被給送且被至少一流動導引件引導於該基材的方向上,抽吸式抽取較佳發生在該塗佈室的底部區域。 In an advantageous development of the method, the process gas is here fed through a plurality of gas outlet openings in the electrode and guided by the at least one flow guide in the direction of the substrate, suction extraction It preferably occurs in the bottom region of the coating chamber.
因此,可允許一在該基材方向上來自於上方之特別均勻的處理氣體給送,可達成特別均勻的塗佈結果。 Therefore, a particularly uniform processing gas supply from above in the direction of the substrate can be allowed to achieve a particularly uniform coating result.
依據本發明的另一實施例,該目的在本文開頭時提到的真空塗佈設備類型的例子中被達成,其中至少一流動導引件延伸在該電極和該基材載具之間。 According to another embodiment of the invention, this object is achieved in an example of the type of vacuum coating apparatus mentioned at the outset, wherein at least one flow guide extends between the electrode and the substrate carrier.
以此方式,特別均質且均勻的基材塗佈被提供。由於使用該流動導引件於該電極和該基材載具之間,所以從上方被給送該處理氣體可被特別均勻地導引於該基材的方向上。以此方式,該等處理氣體在其通過該基材表面之前的側向逸逃可被防止或最小化。 In this way, a particularly homogeneous and uniform substrate coating is provided. Since the flow guide is used between the electrode and the substrate carrier, the processing gas fed from above can be guided particularly uniformly in the direction of the substrate. In this way, the lateral escape of the process gases before they pass through the surface of the substrate can be prevented or minimized.
在本發明的一較佳的開發中,該流動導引件是一框架形式,其由該電極延伸於該基材載具的方向上。 In a preferred development of the invention, the flow guide is in the form of a frame that extends from the electrode in the direction of the substrate carrier.
在此處,該至少一氣體出口開口較佳地被設置在一被該流動導引件封圍的室內。 Here, the at least one gas outlet opening is preferably disposed in a chamber enclosed by the flow guide.
更佳地,多個氣體出口開口被設置在該電極內。 More preferably, a plurality of gas outlet openings are disposed within the electrode.
由於此方式,一個在該基材的方向上來自於上方之極為均勻且廣泛的處理氣體的給送可被確保,而這可獲致一極高的塗佈品質。 Due to this, a very uniform and extensive supply of processing gas from above in the direction of the substrate can be ensured, which results in a very high coating quality.
在本發明的一更有利的組態中,該流動導引件被設置且尺寸被設計成使得一最多20mm,較佳地為最多10mm,更佳地為最多6mm,的間隙被保持在該基材載具和該流動導引件之間。 In a more advantageous configuration of the invention, the flow guide is arranged and dimensioned such that a gap of up to 20 mm, preferably up to 10 mm, more preferably up to 6 mm, is maintained at the base Between the material carrier and the flow guide.
在本發明的一更有利的組態中,該流動導引件被設置且尺寸被設計成使得一約2至20mm,較佳地約2至7mm,更佳地約2至5mm,的間隙被保持在該基材載具和該流動導引件之間。 In a more advantageous configuration of the invention, the flow guide is arranged and dimensioned such that a gap of about 2 to 20 mm, preferably about 2 to 7 mm, more preferably about 2 to 5 mm, is Maintained between the substrate carrier and the flow guide.
已被顯示的是,藉由此間隙尺寸,特別良好的塗佈結果可被達成。 It has been shown that particularly good coating results can be achieved by this gap size.
詳言之,配合自動設定該基材載具和該電極之間的距離,留下來的間隙可被設定在該被界定的介於2至20mm的範圍內,使得該處理的最佳化實施可被達成。 In detail, in conjunction with automatically setting the distance between the substrate carrier and the electrode, the remaining gap can be set within the defined range of 2 to 20 mm, so that the optimization of the process can be implemented. Was reached.
在本發明的一更有利的組態中,該基材載具被固持在一板子上,較佳地在一石墨板上,其被連接作為該相反電極。 In a more advantageous configuration of the invention, the substrate carrier is held on a plate, preferably on a graphite plate, which is joined as the opposite electrode.
有鑑於在傳統的真空塗佈設備中,該基材載具本身通常被連接作為該相反電極,以本發明的方式,介於該基材和該電極之間的電場的均質化由於使用該板子而可被達成。作為該相反電極的並不是該基材本身,而是該板子,其 較佳地被建構為一石墨板。以此方式,該基材被圈圍在一介於該板子(其已被更向下移位)和該電極之間的一更均質的電場內。當該板子被建構成一石墨板時可產生特別的好處,因為石墨是一極好的導熱體,且這有助於均勻的溫度分佈。 In view of the conventional vacuum coating apparatus, the substrate carrier itself is usually connected as the opposite electrode, in the manner of the present invention, the homogenization of the electric field between the substrate and the electrode is due to the use of the board And can be reached. As the opposite electrode, not the substrate itself, but the board, which It is preferably constructed as a graphite plate. In this manner, the substrate is encircled within a more homogeneous electric field between the plate (which has been displaced further downward) and the electrode. A particular benefit is obtained when the board is constructed as a graphite sheet because graphite is an excellent heat conductor and this contributes to a uniform temperature distribution.
在本發明的一更佳的組態中,該板子或該石墨板被加熱。 In a preferred configuration of the invention, the plate or the graphite plate is heated.
因此,特別均勻的加熱可被達成,特別是在該板子是一石墨板的時候。而,在傳統的設計中,該基材載具被加熱,其上固持有該基材載具的板子可完全被加熱。因此,可確保一更為均勻的溫度。由於該石墨板被完全地加熱,所以雖然用於塗佈的循環時間很短,但該基材溫度的快速均質化可用此方式來達成。 Therefore, particularly uniform heating can be achieved, especially when the board is a graphite sheet. However, in a conventional design, the substrate carrier is heated, and the board on which the substrate carrier is held can be completely heated. Therefore, a more uniform temperature can be ensured. Since the graphite sheet is completely heated, although the cycle time for coating is short, rapid homogenization of the substrate temperature can be achieved in this manner.
以此方式,特別均質的且均勻的塗佈可被支持。 In this way, a particularly homogeneous and uniform coating can be supported.
不待贅言的是,上述的特徵及將於下文中描述的特徵不只可用每一例子中所提出的組合來加以使用,還可以用其它組合或它們自己本身來加以使用,而不偏離發明的範圍。 It goes without saying that the above features and the features which will be described hereinafter can be used not only in the combination proposed in each example, but also in other combinations or by themselves without departing from the scope of the invention.
在圖1中,一依據本發明的真空塗佈設備整體被標以標號10。 In Fig. 1, a vacuum coating apparatus in accordance with the present invention is generally designated by the numeral 10.
該真空塗佈設備10具有一塗佈室12,其以氣密的方式被一底部16、壁18及頂部14所圍繞。該塗佈室12具 有一上空間38及一在該上空間底下的下空間40。一基材載具28可被固持在該上空間38及該下空間40中。該基材載具28可藉由一搬運裝置52通過該壁18上的一相關連的門48被導入到該上空間38中且從上空間38中被撤出。為了要固持在該上空間中,在此處使用的是相關連的滾輪36,其可藉由真空軸套而從該塗佈室12外面予以致動且其可藉由軸向運動而在壁18中被降低。 The vacuum coating apparatus 10 has a coating chamber 12 that is surrounded in a gastight manner by a bottom 16, a wall 18 and a top 14. The coating chamber 12 has There is an upper space 38 and a lower space 40 below the upper space. A substrate carrier 28 can be retained in the upper space 38 and the lower space 40. The substrate carrier 28 can be introduced into the upper space 38 and withdrawn from the upper space 38 by a handling device 52 through an associated door 48 on the wall 18. In order to be held in the upper space, the associated roller 36 is used here, which can be actuated from outside the coating chamber 12 by means of a vacuum bushing and which can be moved in the wall by axial movement. 18 was lowered.
在該下空間中,亦設有輸送滾輪46,其用來固持一基材載具28,該基材載具28在門50打開的狀態下可藉由一被致動的搬運裝置54而被送入該塗佈室12的下空間40中或從該下空間40被撤出。 In the lower space, there is also provided a transport roller 46 for holding a substrate carrier 28 which can be acted upon by the actuated handling device 54 with the door 50 open. It is fed into or withdrawn from the lower space 40 of the coating chamber 12.
一位在該塗佈室12內的基材載具28在該等輸送滾輪36被縮回到該壁18內的時候係平置在一板子32上,該板子較佳地係由石墨構成且可在一昇降裝置42的幫助下可移動於垂直的方向上。該昇降裝置42包含一昇降驅動器64,其例如可以是一電動氣缸,在該昇降驅動器的幫助下,一活塞可以一受控制的方式移位於該垂直的方向上。 A substrate carrier 28 in the coating chamber 12 is placed flat on a plate 32 when the transfer rollers 36 are retracted into the wall 18, preferably constructed of graphite and It can be moved in a vertical direction with the aid of a lifting device 42. The lifting device 42 includes a lifting drive 64 which may, for example, be an electric cylinder with which a piston can be moved in a controlled manner in a vertical direction with the aid of the lifting drive.
該由石墨構成的板子32是可加熱的,為了此目的,多個加熱元件34(例如,電阻式加熱元件)被設置在該板子的底側上,該等加熱元件34係以均勻分布的方式被配置在該板子32的整個底側。依據圖1,一平的基材30被固持在該基材載具28上,該平的基材30可在該塗佈設備10中被塗佈。該板子32被連接作為一相反電極。 The plate 32 of graphite is heatable, and for this purpose a plurality of heating elements 34 (e.g., resistive heating elements) are disposed on the bottom side of the plate, the heating elements 34 being evenly distributed. It is disposed on the entire bottom side of the board 32. According to FIG. 1, a flat substrate 30 is held on the substrate carrier 28, which can be coated in the coating apparatus 10. The board 32 is connected as an opposite electrode.
在該基材30上方,一相關連的平的電極24被設置成 離該基材載具28一距離。多個氣體出口開口26穿過該電極24,該等氣體出口開口26係以散布成網格(grid)形式的方式延伸在該電極24的整個表面上。該等氣體出口開口26係用來給送用於真空塗佈處理的處理氣體,該處理氣體可透過一被連接的氣體給送件22從該塗佈室12的外面被給送。 Above the substrate 30, an associated flat electrode 24 is placed A distance from the substrate carrier 28. A plurality of gas outlet openings 26 are passed through the electrodes 24, and the gas outlet openings 26 extend over the entire surface of the electrode 24 in a manner that is dispersed in a grid. The gas outlet openings 26 are used to feed a process gas for vacuum coating processing that is fed from the outside of the coating chamber 12 through a connected gas feed member 22.
一電壓被施加於該板子32和該電極24之間(未示出),如果是PECVD處理將於真空下於該塗佈室內被實施的話,該電壓可以是RF電壓。 A voltage is applied between the plate 32 and the electrode 24 (not shown), which may be an RF voltage if the PECVD process is to be performed in the coating chamber under vacuum.
在一塗佈處理期間,該處理氣體(如箭頭74所示)在該基材30的方向上均勻地向下流出。為了要避免處理氣體的側向逸逃及確保處理氣體均勻地接近該基材表面,一流動導引件70被設置。該流動導引件是一被圓周地封閉的框架,其被緊固至該電極24的底側並向下延伸至該基材載具28的上方。 During a coating process, the process gas (as indicated by arrow 74) flows uniformly downwardly in the direction of the substrate 30. A flow guide 70 is provided in order to avoid lateral escape of the process gas and to ensure uniform access of the process gas to the surface of the substrate. The flow guide is a circumferentially closed frame that is secured to the bottom side of the electrode 24 and extends downwardly above the substrate carrier 28.
介於該流動導引件或該框架70的下端和該基材載具28之間有一間隙s,其較佳地是在約2至20mm,特別是在2至5mm,的範圍之內且較佳地在該昇降裝置42的幫助之下該間距是可依據至少一處理參數改變的。為此,該昇降裝置42係透過一中央控制器60予以控制,如以控制線66所標示。一感測器62純示意地被例示在該塗佈室12中,該感測器62透過線路68被耦接至該中央控制器60。該感測器例如可以是溫度感測器、壓力感測器、用來偵測一特定的氣體的部分壓力的感測器、等等。不待贅言的是 ,該感測器28只是以純示意的方式被標示且可被建構成任何所想要的感測器,及可提供數種被連接至該中央控制器60之不同的感測器。無論如何,介於該基材載具28和該電極24之間的距離或介於該流動導引件或框架70的下端和該基材載具28之間的間隙s可在該控制器60的幫助下依據諸理參數中的一者來設定,用以確保該處理的最佳化實施。 There is a gap s between the lower end of the flow guide or the frame 70 and the substrate carrier 28, which is preferably in the range of about 2 to 20 mm, especially 2 to 5 mm. Preferably, the spacing is varied with the aid of the lifting device 42 in accordance with at least one processing parameter. To this end, the lifting device 42 is controlled by a central controller 60, as indicated by control line 66. A sensor 62 is purely schematically illustrated in the coating chamber 12, and the sensor 62 is coupled to the central controller 60 via a line 68. The sensor can be, for example, a temperature sensor, a pressure sensor, a sensor for detecting a partial pressure of a particular gas, and the like. Not to be rumored is The sensor 28 is only labeled in a purely schematic manner and can be constructed to form any desired sensor, and can provide several different sensors that are coupled to the central controller 60. In any event, the distance between the substrate carrier 28 and the electrode 24 or the gap s between the lower end of the flow guide or frame 70 and the substrate carrier 28 may be at the controller 60. With the help of one of the parameters, it is set to ensure the optimal implementation of the process.
該塗佈室12可在一真空幫浦20的幫助下被抽真空。該真空幫浦20具有多個抽吸開口21,這些開口較佳地以一均勻散布的方式被配置在該塗佈室12的底部區域。 The coating chamber 12 can be evacuated with the aid of a vacuum pump 20. The vacuum pump 20 has a plurality of suction openings 21 which are preferably arranged in a uniformly distributed manner in the bottom region of the coating chamber 12.
藉由該流動導引件或框架70,透過該電極24被給送至該基材30的表面之處理氣體的極為均勻的接近可被確保。 By the flow guide or frame 70, an extremely uniform access of the process gas that is fed through the electrode 24 to the surface of the substrate 30 can be ensured.
該石墨板32(其被連接作為該相反電極)係用來將該電場均質化,因為與該石墨板32接觸比與基材載具28接觸容易。再者,石墨是很好的導熱體,這可確保在整個表面上有均勻的溫度分布。一極為均勻的溫度分布因而可在整個石墨板32上產生,因而亦在整個基材載具28上及最終地在該基材30上產生,且這會導致一相當均質的塗佈結果。 The graphite plate 32, which is connected as the opposite electrode, is used to homogenize the electric field because contact with the graphite plate 32 is easier than contact with the substrate carrier 28. Furthermore, graphite is a good thermal conductor which ensures a uniform temperature distribution across the entire surface. An extremely uniform temperature profile can thus be produced across the graphite sheet 32 and thus also on the entire substrate carrier 28 and ultimately on the substrate 30, and this results in a fairly homogeneous coating result.
由於將該塗佈室12分成上空間38及下空間40,配合上相關的搬運裝置及相關的裝卸及分配裝置,一特別快速的產出率可被確保。 Since the coating chamber 12 is divided into an upper space 38 and a lower space 40, a particularly rapid yield can be ensured in conjunction with the associated handling device and associated handling and dispensing device.
當在該塗佈室12的上區38的塗佈處理結束時,其上 放置了基材30的該基材載具28可藉由該昇降裝置42而被移入到該下空間40。在門48或50打開的時候,一其上放置了待塗佈的基材的新的基材載具可被該搬運裝置52導入,如箭頭56所標示。與此同時,其上放置了已被完全塗佈的基材30的該基材載具28在該門50打開的時候可被該搬運裝置54從該下空間40中撤出,如箭頭58所標示。 When the coating process at the upper region 38 of the coating chamber 12 is completed, on the upper portion The substrate carrier 28 on which the substrate 30 is placed can be moved into the lower space 40 by the lifting device 42. When the door 48 or 50 is opened, a new substrate carrier on which the substrate to be coated is placed can be introduced by the handling device 52 as indicated by arrow 56. At the same time, the substrate carrier 28 on which the substrate 30 that has been completely coated is placed can be withdrawn from the lower space 40 by the handling device 54 when the door 50 is opened, as indicated by arrow 58. Marked.
不待贅言地,除了圖1所示的兩個分開的門48,50之外,亦可提供一共用的、連續的門或埠口。 Needless to say, in addition to the two separate doors 48, 50 shown in Figure 1, a common, continuous door or cornice can be provided.
該設備較佳地係以循環的方式用批次的模式來操作。 The apparatus preferably operates in a batch mode in a cyclic manner.
圖2例示一真空塗佈設施(vacuum coating installation)的基礎結構,該設施整體被標示為標號80。依據圖2a),該真空塗佈設施80包含三個塗佈單元P1,P2,P3及一構造相同的維修單元M、及一裝卸單元82,該等單元被配置在一分配單元84外側周圍,該分配單元是一正五角形的形式。該等塗佈單元P1,P2,P3及該維修單元M每一者都透過一相關連的埠口或門耦合至該分配單元84。 2 illustrates the basic structure of a vacuum coating installation, which is generally designated by the numeral 80. According to FIG. 2a), the vacuum coating facility 80 comprises three coating units P1, P2, P3 and a maintenance unit M of identical construction, and a handling unit 82, which are arranged around the outside of a dispensing unit 84. The dispensing unit is in the form of a regular pentagon. The coating units P1, P2, P3 and the service unit M are each coupled to the dispensing unit 84 via an associated port or door.
每一塗佈單元P1,P2,P3及該維修單元M是由上述的真空塗佈設備10所形成。 Each of the coating units P1, P2, P3 and the maintenance unit M are formed by the above-described vacuum coating apparatus 10.
在此例子中,相同的塗佈處理被實施於所有該等塗佈單元P1,P2,P3中。由於該等塗佈單元P1,P2,P3平行操作的關係,因而可確保一高的產出率。該等塗佈單元P1,P2,P3的產能被設計成使得三個塗佈單元足以確保標稱(nominal)產出率。該維修單元M具有與該等塗佈單 元P1,P2,P3相同的構造,因而作為保留產能。這表示該塗佈操作是在標稱產出率下操作,而在此同時,維修工作(例如,清潔工作及類此者)可在一個單元內(維修單元M內)實施,而不會減損該標稱產出率。 In this example, the same coating process is carried out in all of the coating units P1, P2, P3. Due to the parallel operation of the coating units P1, P2, P3, a high yield can be ensured. The throughput of the coating units P1, P2, P3 is designed such that three coating units are sufficient to ensure a nominal production rate. The repair unit M has such a coating sheet The elements P1, P2, and P3 have the same structure and thus serve as a reserve capacity. This means that the coating operation is performed at a nominal yield, while at the same time maintenance work (eg, cleaning work and the like) can be performed in one unit (within repair unit M) without detracting This nominal output rate.
圖2b)顯示該真空塗佈設施80’的一不同的狀態,在此裝態中,之前在圖2a)的處理中被用作為塗佈單元P3的單元現在被用作為維修單元M,且之前的維修單元M現在在此處理中則如塗佈單元P3般地被操作。 Fig. 2b) shows a different state of the vacuum coating facility 80', in which the unit previously used as the coating unit P3 in the process of Fig. 2a) is now used as the maintenance unit M, and before The maintenance unit M is now operated in this process as the coating unit P3.
因此,可使用的塗佈單元的數量係與之前的數目相同,而在此同時,該等單元中的一個不同的單元現在被用於維修,其被標示為M。 Thus, the number of coating units that can be used is the same as the previous number, while at the same time a different unit of the units is now used for maintenance, which is labeled M.
圖2c)顯示該真空塗佈設施80”的另一狀態,在此狀態中,之前在圖2b)中被用作為塗佈單元P2的單元現在被用作為維修單元M,而之前的維修單元現在被用作為塗佈單元P2。 Fig. 2c) shows another state of the vacuum coating facility 80", in which the unit previously used as the coating unit P2 in Fig. 2b) is now used as the maintenance unit M, while the previous maintenance unit is now It is used as the coating unit P2.
因此,整個真空塗佈設施的標稱產出率可一直被達成,同時該等單元中的一個單元為了維修的目的一直都是離線的。整體而言,此設計可確保約97%的正常運作時間(uptime)。 Thus, the nominal yield of the entire vacuum coating facility can be achieved at all times, while one of the units is always offline for maintenance purposes. Overall, this design ensures approximately 97% uptime.
10‧‧‧真空塗佈設備 10‧‧‧Vacuum coating equipment
12‧‧‧塗佈室 12‧‧‧ Coating Room
14‧‧‧頂部 14‧‧‧ top
16‧‧‧底部 16‧‧‧ bottom
18‧‧‧壁 18‧‧‧ wall
38‧‧‧上空間 38‧‧‧Upper space
40‧‧‧下空間 40‧‧‧Lower space
28‧‧‧基材載具 28‧‧‧Substrate carrier
30‧‧‧基材 30‧‧‧Substrate
48‧‧‧門 48‧‧‧
50‧‧‧門 50‧‧‧
52‧‧‧搬運裝置 52‧‧‧Transportation device
36‧‧‧輸送滾輪 36‧‧‧Transport roller
32‧‧‧板子 32‧‧‧ boards
42‧‧‧昇降裝置 42‧‧‧ lifting device
64‧‧‧昇降驅動器 64‧‧‧ Lifting drive
34‧‧‧加熱元件 34‧‧‧ heating elements
24‧‧‧電極 24‧‧‧ electrodes
26‧‧‧氣體出口開口 26‧‧‧ gas outlet opening
22‧‧‧氣體給送件 22‧‧‧ gas delivery parts
70‧‧‧導引件或框架 70‧‧‧Guide or frame
74‧‧‧箭頭 74‧‧‧ arrow
60‧‧‧中央控制器 60‧‧‧Central controller
62‧‧‧感測器 62‧‧‧ sensor
66‧‧‧控制線 66‧‧‧Control line
68‧‧‧線路 68‧‧‧ lines
21‧‧‧抽吸開口 21‧‧‧ suction opening
20‧‧‧真空幫浦 20‧‧‧vacuum pump
56‧‧‧箭頭 56‧‧‧ arrow
80‧‧‧真空塗佈設施 80‧‧‧vacuum coating facilities
80’‧‧‧真空塗佈設施 80’‧‧‧vacuum coating facility
80”‧‧‧真空塗佈設施 80”‧‧‧vacuum coating facilities
P1‧‧‧塗佈單元 P1‧‧‧ Coating unit
P2‧‧‧塗佈單元 P2‧‧‧ Coating unit
P3‧‧‧塗佈單元 P3‧‧‧ Coating unit
M‧‧‧維修單元 M‧‧‧Maintenance unit
82‧‧‧裝卸單元 82‧‧‧Handling unit
84‧‧‧分配單元 84‧‧‧Distribution unit
本發明的其它特徵及好處可從參考圖式之較佳的例示性實施例的下面描述中獲得,其中圖1係以高度簡化及示意性例示方式顯示依據本發明 的一真空塗佈設備的剖面圖;及圖2a)至2c)顯示一真空塗佈設施的示意性例示,其具有三個塗佈單元、一個維修單元及一個裝卸單元,這些單元以五角形的方式被安排在一中央分配單元周圍,其中不同類型的使用被示於圖a)至c)中。 Other features and advantages of the present invention can be obtained from the following description of the preferred exemplary embodiments of the drawings, wherein FIG. 1 shows the present invention in a highly simplified and schematic illustration. A cross-sectional view of a vacuum coating apparatus; and Figures 2a) to 2c) show a schematic illustration of a vacuum coating facility having three coating units, a service unit and a handling unit in a pentagon manner Arranged around a central distribution unit, where different types of use are shown in Figures a) to c).
10‧‧‧真空塗佈設備 10‧‧‧Vacuum coating equipment
12‧‧‧塗佈室 12‧‧‧ Coating Room
14‧‧‧頂部 14‧‧‧ top
16‧‧‧底部 16‧‧‧ bottom
18‧‧‧壁 18‧‧‧ wall
20‧‧‧真空幫浦 20‧‧‧vacuum pump
21‧‧‧抽吸開口 21‧‧‧ suction opening
22‧‧‧氣體給送件 22‧‧‧ gas delivery parts
24‧‧‧電極 24‧‧‧ electrodes
26‧‧‧氣體出口開口 26‧‧‧ gas outlet opening
28‧‧‧基材載具 28‧‧‧Substrate carrier
30‧‧‧基材 30‧‧‧Substrate
32‧‧‧板子 32‧‧‧ boards
34‧‧‧加熱元件 34‧‧‧ heating elements
36‧‧‧輸送滾輪 36‧‧‧Transport roller
38‧‧‧上空間 38‧‧‧Upper space
40‧‧‧下空間 40‧‧‧Lower space
42‧‧‧昇降裝置 42‧‧‧ lifting device
46‧‧‧輸送滾輪 46‧‧‧Transport roller
48,50‧‧‧門 48, 50‧‧‧
52‧‧‧搬運裝置 52‧‧‧Transportation device
54‧‧‧搬運裝置 54‧‧‧Transportation device
56‧‧‧箭頭 56‧‧‧ arrow
58,68‧‧‧線路 58,68‧‧‧ lines
60‧‧‧中央控制器 60‧‧‧Central controller
62‧‧‧感測器 62‧‧‧ sensor
64‧‧‧昇降驅動器 64‧‧‧ Lifting drive
66‧‧‧控制線 66‧‧‧Control line
70‧‧‧導引件或框架 70‧‧‧Guide or frame
72‧‧‧室 Room 72‧‧
74‧‧‧箭頭 74‧‧‧ arrow
s‧‧‧間隙 S‧‧‧ gap
d‧‧‧距離 D‧‧‧distance
Claims (13)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE201110113294 DE102011113294A1 (en) | 2011-09-05 | 2011-09-05 | Vacuum coater |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201319298A true TW201319298A (en) | 2013-05-16 |
Family
ID=46690503
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW101130429A TW201319298A (en) | 2011-09-05 | 2012-08-22 | Vacuum coating apparatus |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE102011113294A1 (en) |
TW (1) | TW201319298A (en) |
WO (1) | WO2013034404A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103956315B (en) * | 2014-05-22 | 2016-05-18 | 中国地质大学(北京) | The plasma reaction chamber that a kind of electrode spacing is adjustable and electrode gap adjusting device |
FR3052766B1 (en) * | 2016-06-15 | 2018-07-13 | Thales | REACTOR FOR MANUFACTURING NANOSTRUCTURES BY VAPOR PHASE CHEMICAL DEPOSITION |
CN113957388B (en) * | 2020-07-21 | 2022-08-16 | 宝山钢铁股份有限公司 | Vacuum coating device adopting guide plate type structure to uniformly distribute metal steam |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5000113A (en) * | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
JP2875945B2 (en) * | 1993-01-28 | 1999-03-31 | アプライド マテリアルズ インコーポレイテッド | Method of depositing silicon nitride thin film on large area glass substrate at high deposition rate by CVD |
JP3164956B2 (en) * | 1993-01-28 | 2001-05-14 | アプライド マテリアルズ インコーポレイテッド | Method for depositing amorphous silicon thin film at high deposition rate on large area glass substrate by CVD |
US6001183A (en) * | 1996-06-10 | 1999-12-14 | Emcore Corporation | Wafer carriers for epitaxial growth processes |
US6189482B1 (en) * | 1997-02-12 | 2001-02-20 | Applied Materials, Inc. | High temperature, high flow rate chemical vapor deposition apparatus and related methods |
US6626186B1 (en) | 1998-04-20 | 2003-09-30 | Tokyo Electron Limited | Method for stabilizing the internal surface of a PECVD process chamber |
US7279049B2 (en) * | 2004-02-05 | 2007-10-09 | Applied Materials, Inc. | Apparatus for reducing entrapment of foreign matter along a moveable shaft of a substrate support |
US20050233092A1 (en) * | 2004-04-20 | 2005-10-20 | Applied Materials, Inc. | Method of controlling the uniformity of PECVD-deposited thin films |
US20070116872A1 (en) * | 2005-11-18 | 2007-05-24 | Tokyo Electron Limited | Apparatus for thermal and plasma enhanced vapor deposition and method of operating |
US20070116888A1 (en) * | 2005-11-18 | 2007-05-24 | Tokyo Electron Limited | Method and system for performing different deposition processes within a single chamber |
US7740705B2 (en) * | 2006-03-08 | 2010-06-22 | Tokyo Electron Limited | Exhaust apparatus configured to reduce particle contamination in a deposition system |
US20070264443A1 (en) * | 2006-05-09 | 2007-11-15 | Applied Materials, Inc. | Apparatus and method for avoidance of parasitic plasma in plasma source gas supply conduits |
US8114484B2 (en) * | 2007-07-19 | 2012-02-14 | Applied Materials, Inc. | Plasma enhanced chemical vapor deposition technology for large-size processing |
DE102008026000B4 (en) | 2008-05-29 | 2012-03-22 | Von Ardenne Anlagentechnik Gmbh | Method and device for coating flat substrates |
US20100044213A1 (en) * | 2008-08-25 | 2010-02-25 | Applied Materials, Inc. | Coating chamber with a moveable shield |
US20120097330A1 (en) * | 2010-10-20 | 2012-04-26 | Applied Materials, Inc. | Dual delivery chamber design |
-
2011
- 2011-09-05 DE DE201110113294 patent/DE102011113294A1/en not_active Withdrawn
-
2012
- 2012-08-14 WO PCT/EP2012/065865 patent/WO2013034404A1/en active Application Filing
- 2012-08-22 TW TW101130429A patent/TW201319298A/en unknown
Also Published As
Publication number | Publication date |
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DE102011113294A1 (en) | 2013-03-07 |
WO2013034404A1 (en) | 2013-03-14 |
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