CN203871351U - Structure capable of diffusing reaction gas of boron diffusion furnace uniformly - Google Patents
Structure capable of diffusing reaction gas of boron diffusion furnace uniformly Download PDFInfo
- Publication number
- CN203871351U CN203871351U CN201420251814.8U CN201420251814U CN203871351U CN 203871351 U CN203871351 U CN 203871351U CN 201420251814 U CN201420251814 U CN 201420251814U CN 203871351 U CN203871351 U CN 203871351U
- Authority
- CN
- China
- Prior art keywords
- reaction gas
- gas
- exhaust pipe
- clapboard
- boron diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000009792 diffusion process Methods 0.000 title claims abstract description 30
- 239000012495 reaction gas Substances 0.000 title claims abstract description 30
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 24
- 239000010453 quartz Substances 0.000 claims abstract description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000007789 gas Substances 0.000 claims abstract description 11
- 238000006243 chemical reaction Methods 0.000 claims abstract description 7
- 125000006850 spacer group Chemical group 0.000 claims description 13
- 239000003708 ampul Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 25
- 229910052710 silicon Inorganic materials 0.000 abstract description 22
- 239000010703 silicon Substances 0.000 abstract description 22
- 238000000034 method Methods 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 239000004411 aluminium Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- -1 this Chemical compound 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a structure capable of diffusing reaction gas of a boron diffusion furnace uniformly. The structure comprises an upper clapboard disposed on an upper end of a quartz boat, a lower clapboard disposed on the lower end of the quartz boat, a gas feeding pipe used for feeding reaction gas, and a pumping-exhaust pipe used for exhausting the gas after the reaction. The upper clapboard is uniformly provided with gas inlets, and the lower clapboard is uniformly provided with gas outlets. One end of the gas feeding pipe is used for the feeding of the reaction gas, and the other end of the gas feeding pipe is disposed on the upper end of the upper clapboard. One end of the pumping-exhaust pipe is disposed on the lower end of the lower clapboard, and the other end of the pumping-exhausting pipe is connected with a main pumping-exhaust pipe of the boron diffusion furnace. The structure provided by the utility model is advantageous in that the upper side and the lower side of the quartz boat are provided with the clapboards, and the predetermined path used for guiding the reaction gas can be set, and therefore the reaction gas can be uniformly disposed in the middle flow channels of the silicon wafers, and the uniform diffusion can be realized, and the problem of the non-uniform diffusion of the reaction gas in the technical process can be solved.
Description
Technical field
The utility model relates to the diffusion technology equipment of crystal silicon battery, specifically a kind of structure of even diffused with boron diffusion furnace reaction gas.
Background technology
The crystal silicon battery of main flow is all to adopt P type silicon chip as substrate at present, is spread and is prepared PN junction by phosphorus, and back up aluminium paste sintering forms aluminium back surface field.But, because the boron in P type crystal silicon substrate and the combination of oxygen cause photo attenuation, so can cause P type silion cell battery efficiency after long-time use to have 15～25% decay.Just use instead subsequently N-type crystal silicon replace P type crystal silicon as substrate to address the above problem, and because N-type silicon has longer minority carrier life time, in the high efficiency cell configuration such as such as full back of the body contact battery, have very large development potentiality, utilizing N-type silicon substrate to prepare battery needs boron to spread to prepare PN junction.In order to reduce costs, the silicon wafer thickness of preparing battery future will be more and more thinner, in current main-stream battery structure, aluminium back surface field is because the thermal coefficient of expansion of aluminium in heat treatment and silicon differs larger, so prepare the situation that battery after aluminium back surface field there will be warpage, in the situation that silicon substrate is very thin, prepare aluminium back surface field and will cause silicon chip cracking, qualification rate reduces, and the method for utilizing boron to diffuse to form back surface field can not cause the bending of silicon chip, simultaneously due to the solid solubility of boron in silicon much larger than aluminium the solid solubility in silicon, thereby boron back surface field is more effective than aluminium back surface field, more be conducive to the lifting of battery efficiency.Thereby with boron diffusion as P type cell back field raising efficiency and to utilize N-type battery further to improve photoelectric conversion efficiency will be a following important development trend, above-mentioned two kinds of battery technologies all inevitably will use boron diffusion technique.
Solar cell industryization produce in the normal Boron tribromide liquid source tubular diffusion process that adopts of boron diffusion, conventionally diffusion temperature between 900 DEG C to 1100 DEG C, diffusion reaction product B in this temperature range
2o
3liquid, thereby the uniformity of boron diffusion can not show a candle to the uniformity of phosphorus diffusion, this process can produce accessory substance BSG(Pyrex simultaneously), BSG can be attached to Quartz stove tube, quartzy fire door and quartz boat surface, affect diffusion effect, thereby affect the manufacture craft of crystal silicon battery, the structural representation of the Quartz stove tube of conventional diffusion stove, quartzy fire door and quartz boat is shown in Fig. 1.Thereby, solve be economically the prepared with significance of boron diffusion uniformity problem for efficient, low-cost solar battery.
Utility model content
The purpose of this utility model is the structure that a kind of even diffused with boron diffusion furnace reaction gas will be provided, this structure is to place respectively dividing plate in the both sides up and down of quartz boat, on dividing plate, be uniform-distribution with hole, respectively as air admission hole and venthole, guiding reaction gas enters in reacting furnace by predetermined path.The flow resistance of every silicon chip intermediate flow channel is equal, and reaction gas can evenly be diffused into the runner in the middle of all silicon chips.
The technical solution of the utility model is as follows:
A structure for even diffused with boron diffusion furnace reaction gas, is characterized in that: comprise quartz ampoule, quartz boat, quartzy fire door, be arranged at quartz boat upper end upper spacer, be arranged at the lower clapboard of quartz boat lower end; For passing into the air inlet pipe of reaction gas, the exhaust pipe of the rear gas of discharge reaction, on upper spacer, be evenly provided with air admission hole, on lower clapboard, be evenly provided with venthole, air inlet pipe one end passes into reaction gas, the other end of air inlet pipe is positioned at the upper end of upper spacer, one end of exhaust pipe is positioned at the lower end of lower clapboard, the main exhaust pipe of the other end access boron diffusion furnace of exhaust pipe.
Described upper lower clapboard all can be made with quartz material.
Operation principle of the present utility model is as follows:
In boron diffusion technology course of reaction, reaction gas enters into upper spacer upper end by air inlet pipe, by the dispersed reacting furnace that enters into of air admission hole, the flow resistance of every silicon chip intermediate flow channel equates, reaction gas can evenly be diffused into the middle runner of all silicon chips like this, and after having reacted, reacted gas is discharged to lower clapboard lower end equably by venthole, then be discharged to main exhaust pipe through exhaust pipe and discharge, spread inhomogeneous problem thereby solve reaction gas.
The beneficial effects of the utility model are as follows:
The utility model adopts in the upper and lower both sides of quartz boat and places dividing plate, for reaction gas is provided with the predefined paths of guiding, reaction gas is uniformly distributed in the intermediate flow channel of silicon chip, forms evenly diffusion, efficiently solve reaction gas in technical process and spread inhomogeneous problem; This not only economy but also accurate method have improved conforming product rate greatly, to the significance that is prepared with of efficient, low-cost solar battery.
Brief description of the drawings
Fig. 1 is the structural representation of the Quartz stove tube of conventional diffusion stove, quartzy fire door and quartz boat
Fig. 2 is structural representation of the present utility model
Wherein, Reference numeral is: 1. quartz ampoule; 2. quartzy fire door; 3. the steel sleeve on quartzy fire door, is convenient to the mechanical connection of quartzy fire door and door opened control arm; 4. exhaust pipe; 5. air inlet pipe; 6. silicon chip; 7. quartz boat; 8. upper spacer; 9. air admission hole; 10. lower clapboard; 11. ventholes.
Embodiment
As shown in Figure 2, a kind of structure of even diffused with boron diffusion furnace reaction gas, comprise quartz ampoule 1, quartz boat 7, quartzy fire door 2, be arranged at quartz boat 7 upper ends upper spacer 8, be arranged at the lower clapboard 10 of quartz boat 7 lower ends, quartzy fire door 2 is connected by steel sleeve 3 with door opened control arm; For passing into the air inlet pipe 5 of reaction gas, the exhaust pipe 4 of the rear gas of discharge reaction, on upper spacer 8, be evenly provided with air admission hole 9, on lower clapboard 10, be evenly provided with venthole 11, air inlet pipe 5 one end pass into reaction gas, the other end of air inlet pipe 5 is positioned at the upper end of upper spacer 8, one end of exhaust pipe 4 is positioned at the lower end of lower clapboard 10, the main exhaust pipe of the other end access boron diffusion furnace of exhaust pipe 4.
Described upper spacer 8 and lower clapboard 10 all can be made with quartz material.
Operation principle of the present utility model is as follows:
In boron diffusion technology course of reaction, reaction gas enters into upper spacer 8 upper ends by air inlet pipe 5, by the dispersed reacting furnace that enters into of air admission hole 9, the flow resistance of every silicon chip 6 intermediate flow channel equates, reaction gas can evenly be diffused into the middle runner of all silicon chips 6 like this, and after having reacted, reacted gas is discharged to lower clapboard 10 lower ends equably by venthole 11, then be discharged to main comb through exhaust pipe 4 and discharge, spread inhomogeneous problem thereby solve reaction gas.
Claims (1)
1. the structure of an even diffused with boron diffusion furnace reaction gas, it is characterized in that: comprise quartz ampoule (1), quartz boat (7), quartz fire door (2), be arranged at the upper spacer (8) of quartz boat (7) upper end, be arranged at the lower clapboard (10) of quartz boat (7) lower end, for passing into the air inlet pipe (5) of reaction gas, discharge the exhaust pipe (4) of the rear gas of reaction, on upper spacer (8), be evenly provided with air admission hole (9), on lower clapboard (10), be evenly provided with venthole (11), air inlet pipe (5) one end passes into reaction gas, the other end of air inlet pipe (5) is positioned at the upper end of upper spacer (8), one end of exhaust pipe (4) is positioned at the lower end of lower clapboard (10), the main exhaust pipe of the other end access boron diffusion furnace of exhaust pipe (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420251814.8U CN203871351U (en) | 2014-05-16 | 2014-05-16 | Structure capable of diffusing reaction gas of boron diffusion furnace uniformly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420251814.8U CN203871351U (en) | 2014-05-16 | 2014-05-16 | Structure capable of diffusing reaction gas of boron diffusion furnace uniformly |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203871351U true CN203871351U (en) | 2014-10-08 |
Family
ID=51652276
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420251814.8U Expired - Lifetime CN203871351U (en) | 2014-05-16 | 2014-05-16 | Structure capable of diffusing reaction gas of boron diffusion furnace uniformly |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203871351U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576456A (en) * | 2014-12-24 | 2015-04-29 | 宜兴市环洲微电子有限公司 | Flow-evening source baffle plate for diffusion ventilation |
| CN110184652A (en) * | 2019-05-23 | 2019-08-30 | 上海申和热磁电子有限公司 | A kind of chemical vapor deposition unit and method improving silicon warp degree |
| CN112038444A (en) * | 2020-08-05 | 2020-12-04 | 英利能源（中国）有限公司 | Manufacturing method of N-type crystalline silicon solar cell and manufacturing method of back passivation contact structure of N-type crystalline silicon solar cell |
| CN116404073A (en) * | 2023-06-09 | 2023-07-07 | 无锡松煜科技有限公司 | Method and device for preparing amorphous silicon film in TOPCON battery |
-
2014
- 2014-05-16 CN CN201420251814.8U patent/CN203871351U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576456A (en) * | 2014-12-24 | 2015-04-29 | 宜兴市环洲微电子有限公司 | Flow-evening source baffle plate for diffusion ventilation |
| CN110184652A (en) * | 2019-05-23 | 2019-08-30 | 上海申和热磁电子有限公司 | A kind of chemical vapor deposition unit and method improving silicon warp degree |
| CN112038444A (en) * | 2020-08-05 | 2020-12-04 | 英利能源（中国）有限公司 | Manufacturing method of N-type crystalline silicon solar cell and manufacturing method of back passivation contact structure of N-type crystalline silicon solar cell |
| CN116404073A (en) * | 2023-06-09 | 2023-07-07 | 无锡松煜科技有限公司 | Method and device for preparing amorphous silicon film in TOPCON battery |
| CN116404073B (en) * | 2023-06-09 | 2023-08-15 | 无锡松煜科技有限公司 | Method and device for preparing amorphous silicon film in TOPCON battery |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20141008 |