CN104576456A - Flow-evening source baffle plate for diffusion ventilation - Google Patents
Flow-evening source baffle plate for diffusion ventilation Download PDFInfo
- Publication number
- CN104576456A CN104576456A CN201410812478.4A CN201410812478A CN104576456A CN 104576456 A CN104576456 A CN 104576456A CN 201410812478 A CN201410812478 A CN 201410812478A CN 104576456 A CN104576456 A CN 104576456A
- Authority
- CN
- China
- Prior art keywords
- uniform flow
- source plate
- plate body
- flow
- evening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009423 ventilation Methods 0.000 title claims abstract description 41
- 238000009792 diffusion process Methods 0.000 title claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 8
- 239000010453 quartz Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
The invention discloses a flow-evening source baffle plate for diffusion ventilation. The flow-evening source baffle plate comprises a flow-evening source baffle plate body (1), wherein the flow-evening source baffle plate body (1) is arranged inside a ventilation pipeline (3); the middle axis of the flow-evening source baffle plate body (1) is identical to that of the ventilation pipeline (3); a gap is formed between the outer edge of the flow-evening source baffle plate body (1) and the inner wall of the ventilation pipeline (3); ventilation flow-evening holes (2) are formed in the flow-evening source baffle plate body (1), so that a diffusion gas input into the ventilation pipeline (3) penetrates through the flow-evening source baffle plate body (1) through the ventilation flow-evening holes (2), is uniformly distributed and in contact with a silicon wafer. By adopting the flow-evening source baffle plate, the consistence and the uniformity of the surface concentration of a product are effectively improved, the consistence of parameters is improved, and the pass percent of the product is increased; the shape of the flow-evening source baffle plate body and the shapes and the sizes of the ventilation flow-evening holes can be adjusted according to practical flow, so that the flow-evening source baffle plate is applicable to popularization and application in semiconductor silicon wafer production.
Description
Technical field
The present invention relates in semiconductor technology the gear source plate spreading ventilation, specifically a kind of structure is simple, ventilation is even and the uniform flow gear source plate for spreading ventilation that efficiency is high.
Background technology
In existing technique, general diffusion ventilation is directly ventilated, uniform flow is not had to keep off source plate, this technique easily causes gas to enter skewness in pipeline, silicon chip like this in pipeline and the contact of gas also uneven, thus cause silicon chip surface uneven concentration and cause parameter inconsistent, affect conforming product rate and to gear rate.
Summary of the invention
The object of the invention is the defect existed for prior art, provide that a kind of structure is simple, ventilation evenly and the high uniform flow gear source plate for spreading ventilation of efficiency.
The object of the invention is to solve by the following technical programs:
A kind of uniform flow gear source plate for spreading ventilation, comprise uniform flow gear source plate body, it is characterized in that: described uniform flow gear source plate body is arranged in breather line, the axis of uniform flow gear source plate body and uniform flow identical with the axis of breather line keep off between the outer rim of source plate body and the inwall of breather line gap, uniform flow gear source plate body is provided with and is uniformly distributed after diffusion gas that ventilation uniform flow hole makes to input breather line keeps off source plate body from ventilation uniform flow hole through uniform flow and contacts with silicon chip.
Described uniform flow gear source plate body is uprightly arranged on and is positioned on the quartzy pedestal of breather line.
Described uniform flow gear source plate body has certain wall thickness.
Described ventilation uniform flow hole is rounded, oval, square, one or more in rectangle or triangle.
Described ventilation uniform flow hole is evenly distributed on uniform flow gear source plate body.
Described uniform flow gear source plate body adopts quartz plate to make.
The present invention has the following advantages compared to existing technology:
The present invention, by adding the uniform flow gear source plate put with ventilation uniform flow hole in breather line, makes, by the gas uniform of uniform flow gear source plate, effectively to improve consistency and uniformity, the consistency of raising parameter and the qualification rate of product of product surface concentration; The size of uniform flow gear source plate body and the shape in ventilation uniform flow hole, size can adjust according to actual airflow amount, have the advantages that structure is simple, easy to operate, therefore are suitable for promoting the use of in semi-conductor silicon chip is produced.
Accompanying drawing explanation
Accompanying drawing 1 is the uniform flow gear source plate structural representation for spreading ventilation of the present invention;
Accompanying drawing 2 is the structural representation that uniform flow of the present invention gear source plate body is arranged on quartzy pedestal.
Wherein: 1-uniform flow gear source plate body; 2-ventilation uniform flow hole; 3-breather line; 4-wall thickness; 5-quartzy pedestal.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the present invention is further illustrated.
As Fig. 1, shown in Fig. 2: a kind of uniform flow gear source plate for spreading ventilation, comprise the uniform flow gear source plate body 1 adopting quartz plate to make, uniform flow gear source plate body 1 has certain wall thickness 4 to alleviate the impulsive force of input air-flow, uniform flow gear source plate body 1 is arranged in breather line 2, the axis of uniform flow gear source plate body 1 and uniform flow identical with the axis of breather line 3 keeps off between the outer rim of source plate body 1 and the inwall of breather line 3 gap, uniform flow gear source plate body 1 is provided with ventilation uniform flow hole 2, ventilation uniform flow hole 2 is rounded, oval, square, in rectangle or triangle one or more and be evenly distributed on uniform flow gear source plate body 1, be uniformly distributed after making the diffusion gas inputting breather line 3 keep off source plate body 1 from ventilation uniform flow hole 2 through uniform flow and contact with silicon chip.
Gap is had for the axis realizing uniform flow gear source plate body 1 and uniform flow identical with the axis of breather line 3 keeps off between the outer rim of source plate body 1 and the inwall of breather line 3, this uniform flow gear source plate body 1 is uprightly arranged on and is positioned on the quartzy pedestal 5 of breather line 3, quartz pedestal 5 can be connected with diffusion quartz hook, and uniform flow gear source plate body 1 is connected with quartz hook by quartzy pedestal 5 and realizes passing in and out breather line 3.
The present invention, by adding the uniform flow gear source plate put with ventilation uniform flow hole 2 in breather line 3, makes, by the gas uniform of uniform flow gear source plate, effectively to improve consistency and uniformity, the consistency of raising parameter and the qualification rate of product of product surface concentration; The size of uniform flow gear source plate body 1 and the shape in ventilation uniform flow hole 2, size can adjust according to actual airflow amount, have the advantages that structure is simple, easy to operate, therefore are suitable for promoting the use of in semi-conductor silicon chip is produced.
Above embodiment is only and technological thought of the present invention is described, can not limit protection scope of the present invention with this, every technological thought proposed according to the present invention, and any change that technical scheme basis is done, all falls within scope; The technology that the present invention does not relate to all is realized by prior art.
Claims (6)
1. one kind is kept off source plate for the uniform flow spreading ventilation, comprise uniform flow gear source plate body (1), it is characterized in that: described uniform flow gear source plate body (1) is arranged in breather line (3), axis and the uniform flow identical with the axis of breather line (3) of uniform flow gear source plate body (1) keeps off between the outer rim of source plate body (1) and the inwall of breather line (3) gap, uniform flow gear source plate body (1) is provided with ventilation uniform flow hole (2) and makes the diffusion gas of input breather line (3) from ventilation uniform flow hole (2) through being uniformly distributed after uniform flow gear source plate body (1) and contacting with silicon chip.
2. the uniform flow gear source plate for spreading ventilation according to claim 1, is characterized in that: described uniform flow gear source plate body (1) is uprightly arranged on and is positioned on the quartzy pedestal (5) of breather line (3).
3. the uniform flow gear source plate for spreading ventilation according to claim 1, is characterized in that: described uniform flow gear source plate body (1) has certain wall thickness (4).
4. the uniform flow gear source plate for spreading ventilation according to claim 1, is characterized in that: described ventilation uniform flow hole (2) is rounded, oval, square, one or more in rectangle or triangle.
5. the uniform flow gear source plate for spreading ventilation according to claim 1 or 4, is characterized in that: described ventilation uniform flow hole (2) is evenly distributed on uniform flow gear source plate body (1).
6. the uniform flow gear source plate for spreading ventilation according to claim 1, is characterized in that: described uniform flow gear source plate body (1) adopts quartz plate to make.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410812478.4A CN104576456A (en) | 2014-12-24 | 2014-12-24 | Flow-evening source baffle plate for diffusion ventilation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410812478.4A CN104576456A (en) | 2014-12-24 | 2014-12-24 | Flow-evening source baffle plate for diffusion ventilation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104576456A true CN104576456A (en) | 2015-04-29 |
Family
ID=53092196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410812478.4A Pending CN104576456A (en) | 2014-12-24 | 2014-12-24 | Flow-evening source baffle plate for diffusion ventilation |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104576456A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05190464A (en) * | 1992-01-16 | 1993-07-30 | Toshiba Corp | Vapor growth device |
| CN101339895A (en) * | 2008-08-22 | 2009-01-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas distribution device and plasma processing apparatus applying the same |
| CN201327839Y (en) * | 2008-12-10 | 2009-10-14 | 中国电子科技集团公司第四十八研究所 | Silicon chip loading device for diffusion system |
| JP2012094807A (en) * | 2010-09-28 | 2012-05-17 | Covalent Materials Corp | Horizontal diffusion furnace and method for heat-treating semiconductor wafer using the same |
| CN203871351U (en) * | 2014-05-16 | 2014-10-08 | 中国东方电气集团有限公司 | Structure capable of diffusing reaction gas of boron diffusion furnace uniformly |
-
2014
- 2014-12-24 CN CN201410812478.4A patent/CN104576456A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05190464A (en) * | 1992-01-16 | 1993-07-30 | Toshiba Corp | Vapor growth device |
| CN101339895A (en) * | 2008-08-22 | 2009-01-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas distribution device and plasma processing apparatus applying the same |
| CN201327839Y (en) * | 2008-12-10 | 2009-10-14 | 中国电子科技集团公司第四十八研究所 | Silicon chip loading device for diffusion system |
| JP2012094807A (en) * | 2010-09-28 | 2012-05-17 | Covalent Materials Corp | Horizontal diffusion furnace and method for heat-treating semiconductor wafer using the same |
| CN203871351U (en) * | 2014-05-16 | 2014-10-08 | 中国东方电气集团有限公司 | Structure capable of diffusing reaction gas of boron diffusion furnace uniformly |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150429 |