JPH05190464A - Vapor growth device - Google Patents

Abstract

PURPOSE:To grow a high-quality film in vapor phase by preventing the decomposition of material gas with baffle plate. CONSTITUTION:The temperature rise of material gas passing through the small- diameter hole 2a of a baffle plate 2 is suppressed and the decomposition of material gas is suppressed by arranging a cooler 13, in which cooling water 12 circulates, around the reactor 1 positioned upstream in the direction of a gas flow of a baffle plate 2 and cooling the baffle plate 2, whereby a reaction product is prevented from adhering onto as substrate 5.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vapor phase growth apparatus used for manufacturing semiconductors and the like.

[0002]

2. Description of the Related Art FIG. 12 is a schematic view showing an example of a conventional vapor phase growth apparatus. As shown in this figure, the reactor 100
A substrate holder 102, on which a substrate 101 is placed, in the lower part
A rotary shaft 103 connected to the substrate holder 102, and a heater 10 for heating the substrate 101 and the substrate holder 102.
4, a gas supply pipe 105 for supplying gas (raw material gas, carrier gas, etc.) from a gas supply device (not shown) into the reaction furnace 100, and a plurality of holes 106a for regulating the flow of gas are provided in the upper part. The formed disk-shaped straightening plate 106 is arranged.

A rotary drive unit 107 for rotating the rotary shaft 103 and an exhaust unit 108 for adjusting the pressure inside the reactor 100 and exhausting unreacted gas are connected to the lower outside of the reactor 100. ..

The conventional vapor phase growth apparatus is constructed as described above, and the substrate 101 is heated to a predetermined temperature by the heating of the heater 104 and is rotated at a predetermined rotation speed by the rotation drive of the rotary drive unit 107. Reactor 10 from gas supply device (not shown) through gas supply pipe 105
The gas introduced into 0 (raw material gas, carrier gas, etc.)
It is supplied onto the substrate 101 through the holes 106a of the rectifying plate 106 to vapor-deposit a thin film.

Further, when the thin film is vapor-deposited on the substrate 101, the temperature of the substrate 101 or the substrate holder 102 is measured and temperature control is performed so that the temperature is always a predetermined temperature.

The temperature of the substrate 101 or the substrate holder 102 is measured by, for example, a radiation thermometer 110 arranged outside the upper part of the reaction furnace 100 as shown in FIG.
Other configurations are similar to those of the conventional vapor phase growth apparatus shown in FIG. Since the radiation thermometer 110 is disposed outside the reaction furnace 100, the reaction furnace 1 is arranged so that light of the measurement wavelength is transmitted.
A transparent quartz window 100a is formed on the upper part of 00.

As described above, the radiation thermometer 110 measures the temperature of the substrate 101 at a predetermined position through the quartz window 100a of the reaction furnace 100, and a temperature control device (not shown) controls the temperature of the substrate 101 to a predetermined temperature. Heater 10
4 controls the electric current.

[0008]

By the way, in the above-described conventional vapor phase growth apparatus, since the straightening plate 106 disposed above the substrate 101 is also heated by the heat of the heater 104, the source gas is a straightening plate. The reaction product generated at this time adhered to the substrate 101 due to decomposition when passing through the holes 106a of the film 106, and a high quality thin film could not be obtained.

Further, in the above conventional vapor phase growth apparatus,
The radiation thermometer 110 for measuring the temperature of the substrate 101 or the substrate holder 102 is a quartz window 100 above the reaction furnace 100.
Since it is fixedly provided outside a, it is not possible to measure the temperature at an arbitrary position of the substrate 101 or the substrate holder 102 or in a wide range.

The present invention has been made for the purpose of solving the above-mentioned problems, and it is possible to prevent the decomposition of the raw material gas at the straightening plate and to accurately measure the temperature of the substrate and the substrate holder at arbitrary positions. It is intended to provide a vapor phase growth apparatus.

[0011]

In order to solve the above problems, according to the present invention as set forth in claim 1, a source gas is supplied into a reaction furnace and a substrate on a substrate holder arranged in the reaction furnace. In a vapor phase growth apparatus for heating a thin film on the surface of the substrate by heating with a heating means, a straightening plate having a plurality of holes arranged upstream of the substrate in the flow direction of the source gas, It is characterized in that it is provided with a cooling means for cooling the baffle plate.

Further, in the present invention as set forth in claim 2, the source gas is supplied into the reaction furnace, and the substrate on the substrate holder disposed in the reaction furnace is heated by the heating means to form a thin film on the surface of the substrate. In a vapor phase growth apparatus for performing vapor phase growth, temperature measuring means for measuring the temperature of the substrate or the substrate holder arranged facing the substrate in a non-contact manner, and the temperature measuring means with respect to the substrate surface. It is characterized in that it comprises a moving means for moving in an arbitrary direction.

Further, in the present invention as set forth in claim 3, the source gas is supplied into the reaction furnace, and the substrate on the substrate holder arranged in the reaction furnace is heated by the heating means to form a thin film on the surface of the substrate. In a vapor phase growth apparatus for performing vapor phase growth of a liner pipe, which is disposed in the reaction furnace and prevents adhesion of a reaction product generated by decomposition of the raw material gas to an inner wall of the reaction furnace; A temperature measuring means arranged outside to measure the temperature of the substrate or the substrate holder in a non-contact manner, and a hole is formed in a portion of the liner tube which intersects the temperature measuring optical path from the temperature measuring means to the substrate. It is characterized in that the intersecting or intersecting portion is formed of a member through which light of the measurement wavelength is transmitted.

[0014]

According to the first aspect of the present invention, the temperature rise of the raw material gas passing through the holes of the straightening vane can be suppressed by cooling the straightening vane by the cooling means, so that the raw material gas is decomposed at the straightening vane. Can be prevented.

According to the second aspect of the invention, since the temperature measuring means for measuring the substrate temperature in a non-contact manner can be moved in any direction with respect to the substrate surface, any position of the substrate and the substrate holder can be moved. The temperature can be measured at.

According to the third aspect of the invention, the temperature of the substrate can be measured by the temperature measuring means through the hole formed in the liner tube or the member through which the light of the measurement wavelength is transmitted, so that the temperature measurement can be performed accurately. It can be performed.

[0017]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below based on the illustrated embodiments.

<First Embodiment> FIG. 1 is a schematic view showing a vapor phase growth apparatus according to the first embodiment. As shown in this figure, in the upper part of the reaction furnace 1, a disk-shaped straightening plate 2 (see FIG. 2) having a plurality of small holes 2a and an opening ratio of, for example, 0.1, and a source gas A gas introduction pipe 4 to which a gas supply device 3 for supplying a gas such as a carrier gas is connected is provided, and a substrate (a silicon substrate in this embodiment) 5 is placed in the lower portion of the reaction furnace 1. A substrate holder 6 to be placed, a rotary shaft 7 for detachably supporting the substrate holder 6, and a substrate holder 6
And a heater 8 for heating the substrate 5 is provided.

A rotary shaft 7 is provided on the lower outside of the reactor 1.
A rotary drive device 9 for rotationally driving and is connected to an exhaust device 10 for adjusting the pressure in the reaction furnace 1 and exhausting unreacted gas and the like through an exhaust port 1b.

The current plate 2 is made of quartz, stainless steel, or the like, and is placed on the support base 11 formed along the inner peripheral surface of the reaction furnace 1 so that the outer peripheral surface thereof is in close contact.

A cooling device 13 for circulating cooling water 12 is arranged on the outer peripheral surface and the upper surface of the reaction furnace 1 located upstream of the flow straightening plate 2 in the gas flow direction. The discharge is performed via the supply pipe 14 and the discharge pipe 15. The cooling device 13 may be formed only on a part of the outer peripheral surface and the upper surface of the reaction furnace 1.

The vapor phase growth apparatus according to the present embodiment is constructed as described above, the inside of the reaction furnace 1 is evacuated by the exhaust device 10 to adjust the pressure inside the reaction furnace, and the heater 8 is heated to heat the substrate holder 6 The substrate 5 placed on the substrate at a predetermined temperature (for example, 1100
The temperature of the rotary shaft 7 is increased by the rotary drive device 9 while being heated at about
Is rotated to rotate the substrate 5 placed on the substrate holder 6 at a predetermined number of rotations, and a source gas (for example, SiH ₂ Cl ₂ ) and a carrier gas (for example, H ₂ ) are supplied from the gas supply device 3 to the gas introduction pipe 4. Through the reactor.

The source gas and the carrier gas supplied into the reaction furnace 1 are supplied onto the substrate 5 through the small diameter holes 2a of the straightening plate 2, so that the semiconductor thin film is vapor-phase grown on the substrate 5.

At this time, the current plate 2 is also heated by the heater 8, but the current plate 2 is cooled by the cooling water 1 flowing in the cooling device 13.
Since it is cooled by 2, the temperature rise of the raw material gas passing through the small diameter hole 2a of the rectifying plate 2 is suppressed, so that the decomposition of the raw material gas is suppressed when passing through the small diameter hole 2a, and the reaction product adheres to the substrate 5. Can be prevented.

The position of the straightening plate 2, that is, the distance between the straightening plate 2 and the substrate 5 also affects the decomposition of the source gas and the uniformity of the film thickness of the semiconductor thin film vapor-phase grown on the substrate 5.

Table 1 shown below shows the results of experiments on the uniformity of the film thickness with respect to the change in the distance between the straightening plate 2 and the substrate 5, and the presence or absence of decomposition of the raw material gas on the straightening plate 2. Table 1
As shown in, the distance between the current plate 2 and the substrate 5 is approximately 5 cm
Within the range of 1 m, there was no problem in the uniformity of the film thickness of the semiconductor thin film vapor-deposited on the substrate 5, and there was almost no decomposition of the raw material gas in the rectifying plate 2.

[0027]

[Table 1] <Second Embodiment> FIG. 3 is a schematic sectional view showing a vapor phase growth apparatus according to a second embodiment of the present invention. As shown in this figure, a gas inlet 1a to which a gas supply device (not shown) for supplying a gas such as a raw material gas and a carrier gas is connected is provided on the upper side surface of the reaction furnace 1. An exhaust device (not shown) for adjusting the pressure in the reaction furnace 1 and exhausting unreacted gas and the like is connected to the lower side surface of the exhaust port 1
b is provided.

Below the gas inlet 1a in the upper part of the reaction furnace 1, there is arranged a disk-shaped rectifying plate 2 having a plurality of small diameter holes 2a and an aperture ratio of 0.1, for example. Has
A substrate holder 6 on which a substrate (a silicon substrate in this embodiment) 5 is placed, and a rotating shaft 7 which detachably supports the substrate holder 6.
And a heater 8 for heating the substrate holder 6 and the substrate 5.

The outer peripheral portion 2b of the straightening vane 2 is located outside the reaction furnace 1, and a flow passage 30 through which the refrigerant (for example, water) 12 flows is formed in the outer peripheral portion 2b of the straightening vane 2. Supply and discharge of the refrigerant (for example, water) 12 is performed via a supply pipe 14 and a discharge pipe 15 connected to the flow path 30.

The heater 8 is arranged in the space formed in the substrate holder 6 and is connected to the power supply 31 through the inside of the rotary shaft 7.

A rotary drive device (not shown) for rotationally driving the rotary shaft 7 is connected to the lower outside of the reactor 1.

Also in this embodiment, a semiconductor thin film is vapor-phase grown on the substrate 5 in the same manner as in the first embodiment.

At the time of vapor phase growth, the straightening plate 2 for flowing the source gas (for example, SiH ₂ Cl ₂ ) evenly over the substrate 5 is also heated by the heater 8. The straightening plate 2 is the straightening plate 2.
Refrigerant (eg, water) 1 flowing in the flow path 30 of the outer peripheral portion 2b of the
Since it is cooled by 2, the temperature rise of the raw material gas passing through the small diameter hole 2a of the rectifying plate 2 is suppressed, so that the decomposition of the raw material gas is suppressed when passing through the small diameter hole 2a and the reaction product adheres to the substrate 5. Can be prevented.

Further, by forming the rectifying plate 2 of aluminum, aluminum alloy, copper, copper alloy or the like having high thermal conductivity, the outer peripheral portion 2b of the rectifying plate 2 is a refrigerant (for example, water) 12
By cooling with, the entire rectifying plate 2 can be cooled more effectively.

<Third Embodiment> FIG. 4 is a schematic sectional view showing a vapor phase growth apparatus according to a third embodiment of the present invention. In this embodiment, a cooling pipe 32 in which a coolant (for example, water) 12 flows is connected along the outer peripheral portion 2b of the current plate 2 in the second embodiment shown in FIG. 3, and is connected to the cooling pipe 32. The refrigerant (for example, water) 12 is supplied and discharged through the supply pipe 14 and the discharge pipe 15 that are provided. Other configurations are shown in FIG.
It is similar to the second embodiment shown in FIG.

Also in this embodiment, the flow straightening plate 2 heated during vapor phase growth is cooled by the refrigerant (for example, water) 12 flowing in the cooling pipe 32 connected to the outer peripheral portion 2b of the flow straightening plate 2, so that the flow straightening is performed. By suppressing the temperature rise of the raw material gas passing through the small diameter hole 2a of the plate 2, it is possible to suppress the decomposition of the raw material gas when passing through the small diameter hole 2a and prevent the reaction product from adhering to the substrate 5. ..

In this embodiment, the outer peripheral portion 2b of the rectifying plate 2 is
Since there is a thermal contact resistance between the cooling pipe 32 and the cooling pipe 32, the cooling effect is slightly lower than in the case of the second embodiment shown in FIG. 3, but the cooling structure can be simplified.

<Fourth Embodiment> FIG. 5 is a schematic sectional view showing a vapor phase growth apparatus according to a fourth embodiment of the present invention. In this embodiment, the fins 33 are formed along the outer peripheral portion 2b of the current plate 2 in the second embodiment shown in FIG.
The other structure is similar to that of the second embodiment shown in FIG.

Also in this embodiment, since the flow straightening plate 2 heated during vapor phase growth is cooled by heat radiation from the fins 33 formed on the outer peripheral portion 2b of the flow straightening plate 2, the small diameter holes 2a of the flow straightening plate 2 are removed. By suppressing the temperature rise of the raw material gas passing therethrough, it is possible to suppress the decomposition of the raw material gas when passing through the small diameter hole 2a and prevent the reaction product from adhering to the substrate 5.

Further, in the above-mentioned first to fourth embodiments, since the cooling means for cooling the current plate 2 is located on the outer peripheral portion of the reaction furnace 1, the cooling means can be easily installed.

<Fifth Embodiment> FIG. 6 is a perspective view showing a current plate of a vapor phase growth apparatus according to a fifth embodiment of the present invention.

The current plate 16 according to this embodiment has a hollow portion 16 inside except for a portion where a plurality of small diameter holes 16a are formed.
b is formed, and the hollow portion 16 of the straightening plate 16 is formed by the cooling water supply pipe 16c and the discharge pipe 16d formed on the outer peripheral portion.
Cooling water is circulated in b. Thus, in this embodiment,
Instead of providing the cooling device 13 in the reactor 1 as in the first embodiment, the inside of the current plate 16 is directly cooled by cooling water. Other configurations are similar to those of the first embodiment shown in FIG.

In this embodiment as well, as in the above-described embodiments, since the rectifying plate 16 can be cooled by the cooling water circulating in the hollow portion 16b in the rectifying plate 16, the raw material gas passing through the small diameter holes 16a of the rectifying plate 16 By suppressing the temperature rise, it is possible to suppress the decomposition of the source gas and prevent the reaction products from adhering to the substrate 5.

<Sixth Embodiment> FIG. 7 is a perspective view showing a current plate of a vapor phase growth apparatus according to a sixth embodiment of the present invention.

The current plate 2 made of quartz according to this embodiment is
Similar to the above, a plurality of small diameter holes 2a for passing the raw material gas are formed, and the surface located on the substrate side (lower side in the figure) is plated with, for example, gold 17 having a high heat reflectance. As described above, in this embodiment, instead of providing the cooling device 13 in the reaction furnace 1 as in the first embodiment, the heat transmitted by the radiant heat or the like to the rectifying plate 2 is reduced by the gold plating 17 or the like having a high heat reflectance to rectify the rectification. This is a structure for suppressing the temperature rise of the plate 2.
Other configurations are similar to those of the first embodiment shown in FIG.

Also in this embodiment, since the heat transmitted by the radiation from the heater 8 by the gold plating 17 can be reduced and the temperature rise of the rectifying plate 2 can be suppressed, the decomposition of the raw material gas is suppressed and the reaction on the substrate 5 is suppressed. It is possible to prevent the product from adhering.

In the sixth embodiment, the current plate 2 is plated with gold 17.
In addition to this, other plating may be used as long as it has a high heat reflectance, and instead of applying the gold plating 17 having a high heat reflectance to the rectifying plate 2, the rectifying plate 2 has a low emissivity (for example, The same effect can be obtained even if the material is made of a material such as stainless steel or aluminum (emissivity is 0.5 or less).

Further, in each of the above-mentioned embodiments, the vapor phase growth of silicon is performed. However, other than this, the present invention can be applied to vapor phase growth of a compound semiconductor or carbon of diamond or the like. ..

<Seventh Embodiment> FIG. 8 is a schematic view showing a vapor phase growth apparatus according to a seventh embodiment of the present invention. As shown in this figure, a plurality of small diameter holes 2a are formed in the upper portion of the reaction furnace 1, and a circular plate-shaped straightening plate 2 having an aperture ratio of, for example, 0.1 and a source gas, a carrier gas, etc. Gas introduction pipes 4a, 4b to which supply devices 3a, 3b for supplying gas are connected
And a substrate holder 6 on which a substrate (a silicon substrate in this embodiment) 5 is placed, in the lower part of the reaction furnace 1,
A rotary shaft 7 for detachably supporting the substrate holder 6, a heater 8 for heating the substrate holder 6 and the substrate 5, and a plurality of reflecting plates 20 for reflecting the heat of the heater 8 to the substrate holder 6 side are arranged. ..

The current plate 2 is made of quartz glass so as to allow light to pass therethrough, and is placed on a support base 11 formed along the inner peripheral surface of the reaction furnace 1. The small diameter hole 2a has a radius center. It is not formed on an arbitrary straight line passing through (hatched portion) (see FIG. 9). Further, at least a portion corresponding to the upper portion of the hatched portion in FIG. 9 of the upper portion 1c of the reaction furnace 1 located above the rectifying plate 2 is formed of quartz glass so as to transmit light.

The gas introduction pipes 4a and 4b are arranged on the side surface of the upper part of the reaction furnace 1 so as to face the upstream side of the flow straightening plate 2 in the flow direction of the raw material gas.

The heater 8 and the reflection plate 20 located below the substrate holder 6 are respectively supported on the peripheral surface of the rotary shaft 7 by a supporting member (not shown), and the heater 8 is the outer periphery of the substrate holder 6. It is arranged inside the rib 6a formed in the lower part of the surface. The rib 6a allows the substrate holder 6 and the substrate 5
It is possible to reduce the heat transmitted from the periphery of the substrate holder 6 to the upper portion of the reaction furnace 1 when the heater 8 is heated by the heater 8.
A temperature control device (not shown) for controlling the heating temperature is connected to the heater 8.

Further, between the flow straightening plate 2 and the substrate holder 6 in the reaction furnace 1 and outside the substrate holder 6, the heater 8 and the reflecting plate 20, there are cylindrical cylinders made of quartz for preventing the adhesion of reaction products. Liner tubes 21 and 22 are provided.

A radiation thermometer 23 such as a two-color thermometer for measuring the temperature of the substrate 5 is arranged above the upper portion 1b of the reaction furnace 1 substantially vertically to the substrate 5, and the lower outside of the reaction furnace 1 The rotary drive device 9 that drives the rotary shaft 7 to rotate, the exhaust device 10 that adjusts the pressure inside the reaction furnace 1 through the exhaust port 1b and exhausts unreacted gas, and the liner pipe 22 through the gas supply port 1d. A gas supply device 24 for supplying a purge gas is connected inside.

The radiation thermometer 23 is moved by the connected moving device 25 on a straight line passing through the radial center where the small diameter hole 2a of the straightening vane 2 is not formed (the hatched portion of the straightening vane 2 shown in FIG. 9). Along which the surface of the substrate 5 is moved substantially parallel to.

The moving device 25 moves on the linear stage 26 and can be stopped at any position. The means for moving the moving device 26 may use power such as a stepping motor or an air actuator, or may be manual.

The vapor phase growth apparatus according to the present embodiment is configured as described above, and vapor phase growth of the semiconductor thin film on the substrate 5 can be performed in the same manner as in the first embodiment. A description of the phase growth is omitted.

At this time, a purge gas (for example, H ₂ ) is supplied from the gas supply device 24 through the gas supply port 1d into the liner pipe 22 in which the heater 8 and the reflection plate 20 are arranged. It is possible to prevent the raw material gas from entering.

When vapor-depositing a semiconductor thin film on the substrate 5, the temperature of the substrate 5 is measured by the radiation thermometer 23 through the upper part 1c of the reaction furnace 1 and the rectifying plate 2 (measurement of the radiation thermometer 23 at this time). The wavelength is, for example, 1 to 2.5 μm), and a temperature control is performed by outputting a control signal to a temperature control device (not shown) of the heater 8 so that the temperature is always a predetermined temperature.

At this time, since the light from the heater 8 is blocked by the rib 6a, it is difficult for the light in the high temperature portion to enter the radiation thermometer 23. Further, since it can be moved substantially horizontally with respect to the surface of the substrate 5 by the moving device 25, light from other portions in the reaction furnace 1 is less likely to be reflected on the substrate 5 and enter the radiation thermometer 23. The temperature of the substrate 5 at any position can be accurately measured, and the temperature of the substrate 5 can be accurately controlled.

Further, by disposing a plurality of radiation thermometers 23 at arbitrary positions substantially parallel to the substrate 5 along a straight line passing through the radial center where the small diameter holes 2a of the straightening plate 2 are not formed, The temperatures at a plurality of points on the substrate 5 can be simultaneously measured.

Further, in the present embodiment, the small diameter hole 2 is formed in the portion of the rectifying plate 2 located in the area where the radiation thermometer 23 moves.
Although a is not formed, the elongated hole 2c may be formed in the portion of the current plate 2 located in the area where the radiation thermometer 23 moves, as shown in FIG. In this case, the elongated holes 2c formed in the straightening vane 2 are formed so that the gas is uniformly supplied to the substrate 5.

<Eighth Embodiment> FIG. 11 is a schematic view showing a vapor phase growth apparatus according to an eighth embodiment of the present invention.

In the present embodiment, quartz windows (two places in the figure) 26 and 27 are formed on the upper side surface of the reaction furnace 1, and radiation thermometers 23, such as a two-color thermometer, are arranged outside the quartz windows 26 and 27, respectively. This is a configuration in which holes 21a and 21b are formed in the liner tube 21 located on the optical path for measuring the substrate temperature of the total 23. The other structure is similar to that of the seventh embodiment shown in FIG.

As described above, in this embodiment, the quartz windows 26, 2 are
7. The radiation thermometer 23 provided on the upper side surface of the reaction furnace 1 through the holes 21a and 21b of the liner tube 21 controls the temperature at an arbitrary position on the substrate 5 from obliquely above the influence of light refraction by the liner tube 21. Without receiving the rib 6a
Thus, accurate measurement can be performed without being affected by the light from the heater 8, and the temperature of the substrate 5 can be accurately controlled.

Even when the holes 21a and 21b are not formed in the liner tube 21, the substrate temperature can be measured by forming the portion corresponding to the measurement optical path of the liner tube 21 with a member that transmits light of the measurement wavelength. In this case, since reaction products generated when the raw material gas is decomposed adhere to the lower portion of the liner tube 21 during vapor phase growth, the portion of the liner tube 21 that contacts the measurement optical path is separated from the substrate 5 by a predetermined distance (for example, By separating only 5 cm or more), that part does not get dirty,
Accurate temperature can be measured. Further, by flowing the purge gas (for example, H ₂ ) along the inner wall surface of the liner pipe 21, it is possible to prevent the reaction products and the like from adhering to the liner pipe 21. Further, by flowing the purge gas inside the windows 26 and 27, it is possible to measure the accurate temperature without the windows 26 and 27 becoming dirty.

In the above embodiment, two quartz windows 26 and 27 are formed in the upper part of the side surface of the reaction furnace 1 and one radiation thermometer 23 is arranged outside each of the quartz windows 26 and 27, but the invention is not limited to this. However, for example, one or more quartz windows may be formed on the upper side surface of the reaction furnace 1, and one or a plurality of radiation thermometers 23 may be arranged outside the quartz windows.

Although quartz is used for the measuring window in the above-mentioned embodiment, the material is not limited to quartz, and other materials such as KBr may be used as long as it is a member that transmits the measuring light.

In addition, in the seventh and eighth embodiments described above, in synchronization with the rotation of the substrate 5 which rotates integrally with the substrate holder 6 (an arbitrary measurement point of the substrate 5 is on the measurement optical path of the radiation thermometer 23). When the radiation thermometer 23 measures the temperature of the substrate 5, the temperature of the substrate 5 at an arbitrary position can be measured even when the substrate 5 is rotating.

The radiation thermometer may be a color thermometer such as a two-color thermometer, or other non-contact temperature measuring means may be used.

[0071]

As described above in detail with reference to the embodiments, according to the first aspect of the present invention, by cooling the straightening vane, the decomposition of the raw material gas in the straightening vane can be performed. Since it can be prevented, the reaction product does not adhere to the substrate, and a high quality thin film can be obtained.

Further, according to the second aspect of the present invention, it is possible to accurately measure the temperature at an arbitrary position on the substrate, and according to the third aspect of the present invention. ,
Even when the temperature on the substrate is measured from the side surface of the reaction furnace through the liner tube, the temperature can be measured with high accuracy.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view showing a vapor phase growth apparatus according to a first embodiment of the present invention.

FIG. 2 is a perspective view showing a current plate of the vapor phase growth apparatus shown in FIG.

FIG. 3 is a schematic cross-sectional view showing a vapor phase growth apparatus according to a second embodiment of the present invention.

FIG. 4 is a schematic sectional view showing a vapor phase growth apparatus according to a third embodiment of the present invention.

FIG. 5 is a schematic sectional view showing a vapor phase growth apparatus according to a fourth embodiment of the present invention.

FIG. 6 is a perspective view showing a current plate of a vapor phase growth apparatus according to a fifth embodiment of the present invention.

FIG. 7 is a sectional view showing a current plate of a vapor phase growth apparatus according to a sixth embodiment of the present invention.

FIG. 8 is a schematic sectional view showing a vapor phase growth apparatus according to a seventh embodiment of the present invention.

9 is a plan view showing a current plate of the vapor phase growth apparatus shown in FIG.

10 is a plan view showing a modified example of the current plate of the vapor phase growth apparatus shown in FIG.

FIG. 11 is a schematic sectional view showing a vapor phase growth apparatus according to an eighth embodiment of the present invention.

FIG. 12 is a schematic view showing an example of a conventional vapor phase growth apparatus.

FIG. 13 is a schematic view showing an example of a conventional vapor phase growth apparatus.

[Explanation of symbols]

 1 Reactor 2, 16 Rectifier 2a, 16a Small diameter hole 2b Long hole 3, 3a, 3b Gas supply device 5 Substrate 6 Substrate holder 6a Rib 8 Heater 13 Cooling device (cooling means) 17 Gold plating 21, 22 Liner pipe 21a, 21b Hole 23 Radiation thermometer (temperature measuring means) 25 Moving device (moving means) 26, 27 Quartz window 30 Flow path (cooling means) 32 Cooling pipe (cooling means) 33 Fin (cooling means)

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Toshimitsu Omine 1 Komukai Toshiba-cho, Kouki-ku, Kawasaki-shi, Kanagawa Stock company Toshiba Research Institute

Claims (3)

[Claims] 1. A vapor phase growth apparatus for supplying a source gas into a reaction furnace and heating a substrate on a substrate holder arranged in the reaction furnace by a heating means to vapor-deposit a thin film on the surface of the substrate. A vapor phase growth apparatus comprising: a straightening plate having a plurality of holes arranged upstream of the substrate in the flow direction of the raw material gas; and a cooling unit for cooling the straightening plate. 2. A vapor phase growth apparatus for supplying a raw material gas into a reaction furnace and heating a substrate on a substrate holder arranged in the reaction furnace by a heating means to vapor grow a thin film on the surface of the substrate. A temperature measuring means for measuring the temperature of the substrate or the substrate holder arranged facing the substrate in a non-contact manner, and a moving means for moving the temperature measuring means in an arbitrary direction with respect to the surface of the substrate. A vapor phase growth apparatus characterized by being provided. 3. A vapor phase growth apparatus for supplying a raw material gas into a reaction furnace and heating a substrate on a substrate holder arranged in the reaction furnace by a heating means to vapor grow a thin film on the surface of the substrate. A liner pipe disposed inside the reaction furnace for preventing adhesion of a reaction product generated by decomposition of the raw material gas to an inner wall of the reaction furnace, and the substrate or substrate holder disposed outside the liner pipe And a temperature measuring means for measuring the temperature of the non-contact, forming a hole in a portion of the liner tube which intersects with the temperature measuring optical path from the temperature measuring means to the substrate, or at the intersecting portion of the measuring wavelength. A vapor phase growth apparatus characterized by being formed of a member that transmits light.