JP3210051B2 - Vapor phase growth equipment - Google Patents
Vapor phase growth equipmentInfo
- Publication number
- JP3210051B2 JP3210051B2 JP00589192A JP589192A JP3210051B2 JP 3210051 B2 JP3210051 B2 JP 3210051B2 JP 00589192 A JP00589192 A JP 00589192A JP 589192 A JP589192 A JP 589192A JP 3210051 B2 JP3210051 B2 JP 3210051B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- phase growth
- temperature
- vapor phase
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体等の製造に用い
られる気相成長装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vapor phase growth apparatus used for manufacturing semiconductors and the like.
【０００２】[0002]
【従来の技術】図１２は、従来の気相成長装置の一例を
示す概略図である。この図に示すように、反応炉１００
内の下部には基板１０１を載置した基板ホルダ１０２
と、基板ホルダ１０２に連結された回転軸１０３と、基
板１０１および基板ホルダ１０２を加熱するヒータ１０
４が配設され、上部には反応炉１００内にガス供給装置
（図示省略）からガス（原料ガス，キャリアガス等）を
供給するガス供給管１０５と、ガスの流れを整える複数
の孔１０６ａを形成した円盤状の整流板１０６が配設さ
れている。2. Description of the Related Art FIG. 12 is a schematic view showing an example of a conventional vapor phase growth apparatus. As shown in FIG.
A substrate holder 102 on which a substrate 101 is placed
A rotating shaft 103 connected to the substrate holder 102; and a heater 10 for heating the substrate 101 and the substrate holder 102.
A gas supply pipe 105 for supplying a gas (a raw material gas, a carrier gas, etc.) from a gas supply device (not shown) into the reaction furnace 100 and a plurality of holes 106a for adjusting a gas flow are provided in the upper part. The formed disk-shaped current plate 106 is provided.
【０００３】また、反応炉１００の外側下部には、回転
軸１０３を回転駆動する回転駆動装置１０７と、反応炉
１００内の圧力調整および未反応ガス等を排気する排気
装置１０８が接続されている。[0003] In addition, a rotary driving device 107 for rotating and driving the rotary shaft 103 and an exhaust device 108 for adjusting the pressure in the reactor 100 and exhausting unreacted gas and the like are connected to a lower portion outside the reactor 100. .
【０００４】従来の気相成長装置は上記のように構成さ
れており、基板１０１をヒータ１０４の加熱によって所
定温度に上昇させると共に、回転駆動装置１０７の回転
駆動によって所定の回転数で回転させ、ガス供給装置
（図示省略）からガス供給管１０５を通して反応炉１０
０内に導入したガス（原料ガス，キャリアガス等）を、
整流板１０６の孔１０６ａを通して基板１０１上に供給
して薄膜を気相成長させる。[0004] The conventional vapor phase epitaxy apparatus is configured as described above. The substrate 101 is heated to a predetermined temperature by heating the heater 104, and is rotated at a predetermined number of rotations by a rotation drive unit 107. The reaction furnace 10 through a gas supply pipe 105 from a gas supply device (not shown)
The gas (raw material gas, carrier gas, etc.)
The thin film is supplied onto the substrate 101 through the hole 106a of the rectifying plate 106, and the thin film is vapor-phase grown.
【０００５】また、基板１０１に薄膜を気相成長させる
時に、基板１０１あるいは基板ホルダ１０２の温度を測
定して常に所定の温度になるように温度制御が行われ
る。[0005] When a thin film is grown on the substrate 101 in a vapor phase, the temperature of the substrate 101 or the substrate holder 102 is measured and temperature control is performed so that the temperature always becomes a predetermined temperature.
【０００６】基板１０１あるいは基板ホルダ１０２の温
度測定は、例えば図１３に示すように反応炉１００上部
の外側に配設した放射温度計１１０によって行われる。
他の構成は図１２に示した従来の気相成長装置と同様で
ある。放射温度計１１０は反応炉１００の外側に配設さ
れているので、測定波長の光が透過するように反応炉１
００の上部には透明な石英窓１００ａが形成されてい
る。The temperature of the substrate 101 or the substrate holder 102 is measured by, for example, a radiation thermometer 110 disposed outside the upper part of the reactor 100 as shown in FIG.
Other configurations are the same as those of the conventional vapor phase growth apparatus shown in FIG. Since the radiation thermometer 110 is disposed outside the reaction furnace 100, the reaction thermometer 1 is set so that light of a measurement wavelength is transmitted.
00, a transparent quartz window 100a is formed.
【０００７】このように、放射温度計１１０によって反
応炉１００の石英窓１００ａを通して基板１０１の所定
位置での温度測定を行い、基板１０１が所定の温度にな
るように温度制御装置（図示省略）によってヒータ１０
４に流す電流を制御する。As described above, the radiation thermometer 110 measures the temperature at a predetermined position of the substrate 101 through the quartz window 100a of the reaction furnace 100, and controls the temperature of the substrate 101 to a predetermined temperature by a temperature controller (not shown). Heater 10
4 is controlled.
【０００８】[0008]
【発明が解決しようとする課題】ところで、上記した従
来の気相成長装置では、基板１０１の上方に配設される
整流板１０６もヒータ１０４の熱によって加熱されてい
るので、原料ガスが整流板１０６の孔１０６ａを通る時
に分解されることにより、この時に生成される反応生成
物が基板１０１に付着し、高品質の薄膜を得ることがで
きなかった。By the way, in the above-mentioned conventional vapor phase growth apparatus, the rectifying plate 106 disposed above the substrate 101 is also heated by the heat of the heater 104, so that the raw material gas is By being decomposed when passing through the hole 106a of 106, the reaction product generated at this time adheres to the substrate 101, and a high-quality thin film could not be obtained.
【０００９】また、上記した従来の気相成長装置では、
基板１０１あるいは基板ホルダ１０２の温度を測定する
放射温度計１１０は、反応炉１００上部の石英窓１００
ａの外側に固定して配設されているので、基板１０１あ
るいは基板ホルダ１０２の任意の位置での温度測定や広
範囲での温度測定を行うことができなかった。In the above-mentioned conventional vapor phase growth apparatus,
A radiation thermometer 110 for measuring the temperature of the substrate 101 or the substrate holder 102 is provided on a quartz window 100 at the top of the reaction furnace 100.
Since it is fixed and disposed outside of “a”, temperature measurement at an arbitrary position on the substrate 101 or the substrate holder 102 or temperature measurement over a wide range cannot be performed.
【００１０】本発明は、上記した課題を解決する目的で
なされ、整流板での原料ガスの分解を防止し、また、基
板および基板ホルダの任意の位置での温度測定を精度よ
く行うことができる気相成長装置を提供しようとするも
のである。SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and can prevent decomposition of a raw material gas at a current plate, and can accurately measure a temperature of a substrate and a substrate holder at arbitrary positions. It is intended to provide a vapor phase growth apparatus.
【００１１】[0011]
【課題を解決するための手段】前記した課題を解決する
ために請求項１乃至７に記載の本発明では、反応炉内に
原料ガスを供給し、前記反応炉内に配設した基板ホルダ
上の基板を加熱手段により加熱して前記基板表面に薄膜
を気相成長させる気相成長装置において、前記基板に対
して前記原料ガスの流れ方向上流側に配設した複数の孔
を有する整流板と、該整流板自体を直接冷却する冷却手
段とを具備したことを特徴としている。Means for Solving the Problems] In the present invention according to claims 1 to 7 in order to solve the above, the raw material gas is supplied into the reactor, the reactor provided with a substrate holder in the In a vapor phase growth apparatus for growing a thin film on the surface of the substrate by heating the substrate by heating means, a rectifying plate having a plurality of holes disposed on the upstream side in the flow direction of the source gas with respect to the substrate. And a cooling means for directly cooling the current plate itself .
【００１２】また、請求項６に記載の本発明では、前記
基板と対向して配設した前記基板もしくは前記基板ホル
ダの温度を非接触で測定する温度測定手段を有し、前記
整流板の前記温度測定手段から前記基板ヘの温度測定光
路と交差する部分に穴を形成するかもしくは交差する部
分を測定波長の光が透過する部材で形成することを特徴
としている。According to a sixth aspect of the present invention, there is provided a temperature measuring means for measuring the temperature of the substrate or the substrate holder disposed opposite to the substrate in a non-contact manner ,
Temperature measurement light from the temperature measurement means of the current plate to the substrate
A hole is formed or intersects with the road
It is characterized in that the component is formed of a member through which light of the measurement wavelength passes .
【００１３】また、請求項７に記載の本発明では、前記
反応炉内に配設され前記反応炉の内壁に前記原料ガスの
分解によって生成される反応生成物の付着を防止するラ
イナー管と、該ライナー管の外側に配設され前記基板も
しくは基板ホルダの温度を非接触で測定する温度測定手
段とを有し、前記ライナー管の前記温度測定手段から前
記基板ヘの温度測定光路と交差する部分に穴を形成する
かもしくは交差する部分を測定波長の光が透過する部材
で形成することを特徴としている。[0013] In the present invention according to claim 7, a liner tube to prevent adhesion of the reaction product produced by the decomposition of disposed reactor the material gas on the inner wall of the reactor, A temperature measuring means disposed outside the liner tube to measure the temperature of the substrate or the substrate holder in a non-contact manner, and a portion of the liner tube intersecting a temperature measuring optical path from the temperature measuring unit to the substrate. In this case, a hole is formed or a crossing portion is formed of a member through which light having a measurement wavelength passes.
【００１４】[0014]
【作用】請求項１乃至７に記載の発明によれば、冷却手
段によって整流板自体を直接冷却することにより、整流
板の孔を通る原料ガスの温度上昇が抑えられることによ
り、整流板での原料ガスの分解を防止することができ
る。According to the first to seventh aspects of the present invention, the temperature rise of the raw material gas passing through the holes of the current plate is suppressed by directly cooling the current plate by the cooling means. The decomposition of the source gas can be prevented.
【００１５】請求項６に記載の発明によれば、基板およ
び基板ホルダの任意の位置での温度測定を精度良く行う
ことができる。 According to the sixth aspect of the present invention, the substrate and
Temperature measurement at any position of the substrate and substrate holder with high accuracy
be able to.
【００１６】請求項７に記載の発明によれば、ライナー
管に形成した穴もしくは測定波長の光が透過する部材を
通して温度測定手段で基板の温度を測定することができ
るので、精度のよい温度測定を行うことができる。According to the seventh aspect of the present invention, the temperature of the substrate can be measured by the temperature measuring means through a hole formed in the liner tube or a member through which light of the measurement wavelength is transmitted. It can be performed.
【００１７】[0017]
【実施例】以下、本発明を図示の実施例に基づいて詳細
に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the illustrated embodiments.
【００１８】〈第１実施例〉図１は、第１実施例に係る
気相成長装置を示す概略図である。この図に示すよう
に、反応炉１内の上部には、複数の小径孔２ａが形成さ
れている円板状の開口率が例えば０．１の整流板２（図
２参照）と、原料ガス，キャリアガス等のガスを供給す
るガス供給装置３が接続されているガス導入管４が配設
されており、反応炉１内の下部には、基板（本実施例で
はシリコン基板）５を載置する基板ホルダ６と、基板ホ
ルダ６を着脱自在に支持する回転軸７と、基板ホルダ６
および基板５を加熱するヒータ８が配設されている。<First Embodiment> FIG. 1 is a schematic diagram showing a vapor phase growth apparatus according to a first embodiment. As shown in this figure, a disk-shaped rectifying plate 2 (see FIG. 2) having a plurality of small-diameter holes 2a and having an opening ratio of 0.1, for example, A gas introduction pipe 4 to which a gas supply device 3 for supplying a gas such as a carrier gas is connected is provided, and a substrate (a silicon substrate in this embodiment) 5 is mounted on a lower part in the reaction furnace 1. A substrate holder 6 to be placed, a rotating shaft 7 for detachably supporting the substrate holder 6, and a substrate holder 6
And a heater 8 for heating the substrate 5.
【００１９】また、反応炉１の外側下部には、回転軸７
を回転駆動する回転駆動装置９と、排気口１ｂを介して
反応炉１内の圧力調整および未反応ガス等を排気する排
気装置１０が接続されている。A rotating shaft 7 is provided at a lower portion of the outside of the reactor 1.
A rotary drive device 9 for driving the rotary shaft is connected to an exhaust device 10 for adjusting the pressure in the reactor 1 and exhausting unreacted gas and the like through an exhaust port 1b.
【００２０】整流板２は、石英やステンレス等で形成さ
れており、反応炉１内の内周面に沿って形成した支持台
１１上に外周面が密接するようにして載置されている。The current plate 2 is made of quartz, stainless steel, or the like, and is mounted on a support base 11 formed along the inner peripheral surface of the reaction furnace 1 so that the outer peripheral surface thereof is in close contact.
【００２１】また、整流板２のガス流れ方向上流側に位
置する反応炉１の外周面および上面には、冷却水１２が
循環する冷却装置１３が配設されており、冷却水１２の
供給と排出は供給管１４と排出管１５を介して行われ
る。冷却装置１３は、反応炉１の外周面および上面の一
部にのみ形成されていてもよい。A cooling device 13 for circulating cooling water 12 is provided on the outer peripheral surface and upper surface of the reaction furnace 1 located upstream of the current plate 2 in the gas flow direction. The discharge is performed via a supply pipe 14 and a discharge pipe 15. The cooling device 13 may be formed only on a part of the outer peripheral surface and the upper surface of the reaction furnace 1.
【００２２】本実施例に係る気相成長装置は上記のよう
に構成されており、排気装置１０で反応炉１内を排気し
て反応炉内圧力を調整し、ヒータ８の加熱によって基板
ホルダ６に載置した基板５を所定温度（例えば１１００
℃程度）で加熱すると共に、回転駆動装置９で回転軸７
を回転駆動して基板ホルダ６に載置した基板５を所定の
回転数で回転させ、ガス供給装置３から原料ガス（例え
ばＳｉＨ2 Ｃｌ2 ），キャリアガス（例えばＨ2 ）をガ
ス導入管４を通して反応炉１内に供給する。The vapor phase growth apparatus according to this embodiment is configured as described above. The inside of the reactor 1 is evacuated by the exhaust device 10 to adjust the pressure inside the reactor, and the substrate holder 6 is heated by the heater 8. The substrate 5 placed on the substrate is heated to a predetermined temperature (for example, 1100
° C), and the rotary drive 9 rotates the rotary shaft 7.
Is rotated to rotate the substrate 5 placed on the substrate holder 6 at a predetermined number of revolutions, and the gas supply device 3 feeds a source gas (for example, SiH 2 Cl 2 ) and a carrier gas (for example, H 2 ) from the gas introduction pipe 4. Through the reactor 1.
【００２３】そして、反応炉１内に供給された原料ガ
ス，キャリアガスは、整流板２の小径孔２ａを通して基
板５上に供給されることによって、基板５上に半導体薄
膜が気相成長する。The source gas and the carrier gas supplied into the reaction furnace 1 are supplied onto the substrate 5 through the small-diameter holes 2a of the rectifying plate 2, so that a semiconductor thin film grows on the substrate 5 in vapor phase.
【００２４】この時、整流板２もヒータ８によって加熱
されるが、整流板２は冷却装置１３内を流れる冷却水１
２によって冷却されているので整流板２の小径孔２ａを
通る原料ガスの温度上昇が抑えられることにより、小径
孔２ａを通る時に原料ガスの分解を抑制して基板５上に
反応生成物が付着するのを防止することができる。At this time, the current plate 2 is also heated by the heater 8, and the current plate 2 is cooled by the cooling water 1 flowing through the cooling device 13.
2, the temperature rise of the raw material gas passing through the small diameter hole 2a of the rectifying plate 2 is suppressed, so that the decomposition of the raw material gas when passing through the small diameter hole 2a is suppressed, and the reaction product adheres to the substrate 5. Can be prevented.
【００２５】また、整流板２の位置つまり整流板２と基
板５間の距離も、原料ガスの分解と、基板５に気相成長
する半導体薄膜の膜厚の均一性に影響する。Further, the position of the current plate 2, that is, the distance between the current plate 2 and the substrate 5 also affects the decomposition of the source gas and the uniformity of the thickness of the semiconductor thin film grown on the substrate 5 in the vapor phase.
【００２６】下記に示す表１は、整流板２と基板５間の
距離の変化に対する膜厚の均一性と、整流板２での原料
ガスの分解の有無の実験結果を示したものである。表１
に示すように、整流板２と基板５間の距離がほぼ５cm〜
１ｍの範囲では、基板５に気相成長する半導体薄膜の膜
厚の均一性に問題なく、また、整流板２での原料ガスの
分解もほとんどなかった。Table 1 below shows the results of experiments on the uniformity of the film thickness with respect to the change in the distance between the current plate 2 and the substrate 5 and on the presence or absence of decomposition of the source gas in the current plate 2. Table 1
As shown in the figure, the distance between the current plate 2 and the substrate 5 is approximately 5 cm to
In the range of 1 m, there was no problem in the uniformity of the thickness of the semiconductor thin film grown in vapor phase on the substrate 5, and the raw material gas was hardly decomposed in the rectifying plate 2.
【００２７】[0027]
【表１】 〈第２実施例〉図３は、本発明の第２実施例に係る気相
成長装置を示す概略断面図である。この図に示すよう
に、反応炉１の上部側面には、原料ガス，キャリアガス
等のガスを供給するガス供給装置（図示省略）が接続さ
れているガス導入口１ａが設けられ、反応炉１の下部側
面には、反応炉１内の圧力調整および未反応ガス等を排
気する排気装置（図示省略）が接続されている排気口１
ｂが設けられている。[Table 1] <Second Embodiment> FIG. 3 is a schematic sectional view showing a vapor phase growth apparatus according to a second embodiment of the present invention. As shown in the figure, a gas inlet 1a to which a gas supply device (not shown) for supplying a gas such as a raw material gas and a carrier gas is connected is provided on an upper side surface of the reaction furnace 1. An exhaust port (not shown) is connected to a lower side surface of the exhaust port 1 for adjusting pressure in the reactor 1 and exhausting unreacted gas and the like.
b is provided.
【００２８】反応炉１の上部のガス導入口１ａの下方に
は、複数の小径孔２ａが形成されている円板状の開口率
が例えば０．１の整流板２が配設され、その下方には、
基板（本実施例ではシリコン基板）５を載置する基板ホ
ルダ６と、基板ホルダ６を着脱自在に支持する回転軸７
と、基板ホルダ６および基板５を加熱するヒータ８が配
設されている。Below the gas inlet 1a in the upper part of the reaction furnace 1, a disk-shaped rectifying plate 2 having a plurality of small-diameter holes 2a and having an opening ratio of, for example, 0.1 is provided. In
A substrate holder 6 on which a substrate (a silicon substrate in this embodiment) 5 is mounted, and a rotary shaft 7 for detachably supporting the substrate holder 6
And a heater 8 for heating the substrate holder 6 and the substrate 5.
【００２９】整流板２の外周部２ｂは反応炉１の外側に
位置しており、整流板２の外周部２ｂ内には、冷媒（例
えば水）１２が流れる流路３０が形成されている。冷媒
（例えば水）１２の供給と排出は、流路３０に接続され
ている供給管１４と排出管１５を介して行われる。The outer peripheral portion 2b of the rectifying plate 2 is located outside the reaction furnace 1, and a flow path 30 through which the refrigerant (for example, water) 12 flows is formed in the outer peripheral portion 2b of the rectifying plate 2. Supply and discharge of the refrigerant (for example, water) 12 are performed via a supply pipe 14 and a discharge pipe 15 connected to the flow path 30.
【００３０】ヒータ８は、基板ホルダ６内に形成した空
間に配設されており、回転軸７内を通して電源３１に接
続されている。The heater 8 is provided in a space formed in the substrate holder 6 and is connected to a power supply 31 through the inside of the rotating shaft 7.
【００３１】また反応炉１の外側下部には、回転軸７を
回転駆動する回転駆動装置（図示省略）が接続されてい
る。A rotary driving device (not shown) for driving the rotary shaft 7 to rotate is connected to a lower portion outside the reaction furnace 1.
【００３２】本実施例においても、第１実施例と同様に
して基板５上に半導体薄膜が気相成長する。Also in this embodiment, a semiconductor thin film is grown on the substrate 5 in the same manner as in the first embodiment.
【００３３】そして、気相成長時には、基板５上に均等
に原料ガス（例えばＳｉＨ2 Ｃｌ2 ）を流す整流板２も
ヒータ８によって加熱されるが、整流板２は、整流板２
の外周部２ｂの流路３０内を流れる冷媒（例えば水）１
２によって冷却されるので、整流板２の小径孔２ａを通
る原料ガスの温度上昇が抑えられることにより、小径孔
２ａを通る時に原料ガスの分解を抑制して基板５上に反
応生成物が付着するのを防止することができる。During the vapor phase growth, the rectifying plate 2 for uniformly flowing the source gas (for example, SiH 2 Cl 2 ) onto the substrate 5 is also heated by the heater 8.
(For example, water) 1 flowing in the flow path 30 of the outer peripheral portion 2b
2, the temperature rise of the raw material gas passing through the small diameter hole 2a of the current plate 2 is suppressed, so that the decomposition of the raw material gas when passing through the small diameter hole 2a is suppressed, and the reaction products adhere to the substrate 5. Can be prevented.
【００３４】また、整流板２を熱電導率の高いアルミニ
ウム，アルミニウム合金，銅，銅合金等で形成すること
により、整流板２の外周部２ｂを冷媒（例えば水）１２
で冷却することで、整流板２全体をより効果的に冷却す
ることができる。Further, by forming the current plate 2 from aluminum, aluminum alloy, copper, copper alloy or the like having a high thermal conductivity, the outer peripheral portion 2b of the current plate 2 is cooled by a coolant (for example, water) 12
By cooling in the above, the entire current plate 2 can be more effectively cooled.
【００３５】〈第３実施例〉図４は、本発明の第３実施
例に係る気相成長装置を示す概略断面図である。本実施
例では、図３で示した第２実施例において、整流板２の
外周部２ｂに沿って冷媒（例えば水）１２が流れる冷却
パイプ３２を接続した構成であり、冷却パイプ３２に接
続されている供給管１４と排出管１５を介して冷媒（例
えば水）１２の供給と排出が行われる。他の構成は図３
に示した第２実施例と同様である。<Third Embodiment> FIG. 4 is a schematic sectional view showing a vapor phase growth apparatus according to a third embodiment of the present invention. In the present embodiment, the cooling pipe 32 through which the refrigerant (for example, water) 12 flows along the outer peripheral portion 2b of the current plate 2 is connected to the cooling pipe 32 in the second embodiment shown in FIG. The supply and discharge of the refrigerant (for example, water) 12 are performed via the supply pipe 14 and the discharge pipe 15 which are provided. FIG. 3 shows another configuration.
This is the same as the second embodiment shown in FIG.
【００３６】本実施例においても、気相成長時に加熱さ
れる整流板２は、整流板２の外周部２ｂに接続した冷却
パイプ３２内を流れる冷媒（例えば水）１２によって冷
却されるので、整流板２の小径孔２ａを通る原料ガスの
温度上昇が抑えられることにより、小径孔２ａを通る時
に原料ガスの分解を抑制して基板５上に反応生成物が付
着するのを防止することができる。Also in the present embodiment, the rectifying plate 2 heated during the vapor phase growth is cooled by the refrigerant (for example, water) 12 flowing in the cooling pipe 32 connected to the outer peripheral portion 2b of the rectifying plate 2, so that the rectifying plate 2 is rectified. Since the temperature rise of the source gas passing through the small-diameter hole 2a of the plate 2 is suppressed, the decomposition of the source gas when passing through the small-diameter hole 2a can be suppressed, and the reaction product can be prevented from adhering to the substrate 5. .
【００３７】尚、本実施例では、整流板２の外周部２ｂ
と冷却パイプ３２間に熱的接触抵抗があるので、図３に
示した実施例２の場合よりも若干冷却効果が低下する
が、冷却構造を簡単にすることができる。In this embodiment, the outer peripheral portion 2b of the current plate 2
Since there is a thermal contact resistance between the cooling pipe 32 and the cooling pipe 32, the cooling effect is slightly lower than in the case of the second embodiment shown in FIG. 3, but the cooling structure can be simplified.
【００３８】〈第４実施例〉図５は、本発明の第４実施
例に係る気相成長装置を示す概略断面図である。本実施
例では、図３で示した第２実施例において、整流板２の
外周部２ｂに沿ってフィン３３を形成した構成であり、
他の構成は図３に示した第２実施例と同様である。<Fourth Embodiment> FIG. 5 is a schematic sectional view showing a vapor phase growth apparatus according to a fourth embodiment of the present invention. In this embodiment, the fin 33 is formed along the outer peripheral portion 2b of the current plate 2 in the second embodiment shown in FIG.
Other configurations are the same as those of the second embodiment shown in FIG.
【００３９】本実施例においても、気相成長時に加熱さ
れる整流板２は、整流板２の外周部２ｂに形成したフィ
ン３３からの放熱によって冷却されるので、整流板２の
小径孔２ａを通る原料ガスの温度上昇が抑えられること
により、小径孔２ａを通る時の原料ガスの分解を抑制し
て基板５上に反応生成物が付着するのを防止することが
できる。Also in this embodiment, the rectifying plate 2 heated during vapor phase growth is cooled by heat radiation from the fins 33 formed on the outer peripheral portion 2b of the rectifying plate 2, so that the small-diameter holes 2a of the rectifying plate 2 are removed. By suppressing the temperature rise of the raw material gas passing therethrough, the decomposition of the raw material gas when passing through the small diameter hole 2a can be suppressed, and the reaction products can be prevented from adhering to the substrate 5.
【００４０】また、前記した第１〜第４実施例では整流
板２を冷却する冷却手段が反応炉１の外周部に位置して
いるので、冷却手段の設置等を容易に行うことができ
る。In the first to fourth embodiments, the cooling means for cooling the current plate 2 is located on the outer periphery of the reaction furnace 1, so that the cooling means can be easily installed.
【００４１】〈第５実施例〉図６は、本発明の第５実施
例に係る気相成長装置の整流板を示す斜視図である。<Fifth Embodiment> FIG. 6 is a perspective view showing a current plate of a vapor phase growth apparatus according to a fifth embodiment of the present invention.
【００４２】本実施例に係る整流板１６は、複数の小径
孔１６ａが形成されている部分以外は内部に中空部１６
ｂが形成されており、外周部に形成した冷却水の供給管
１６ｃと排出管１６ｄによって整流板１６の中空部１６
ｂに冷却水が循環される。このように、本実施例では、
第１実施例のように反応炉１に冷却装置１３を設ける代
わりに整流板１６内を直接冷却水で冷却する構造であ
る。他の構成は図１に示した第１実施例と同様である。The current plate 16 according to the present embodiment has a hollow portion 16 inside except for a portion where a plurality of small diameter holes 16a are formed.
b is formed, and the cooling water supply pipe 16c and the discharge pipe 16d formed on the outer peripheral portion are formed with the hollow portion 16 of the current plate 16.
Cooling water is circulated through b. Thus, in this embodiment,
Instead of providing the cooling device 13 in the reaction furnace 1 as in the first embodiment, the inside of the current plate 16 is directly cooled by cooling water. Other configurations are the same as those of the first embodiment shown in FIG.
【００４３】本実施例においても前記実施例同様、整流
板１６内の中空部１６ｂを循環する冷却水によって整流
板１６を冷却することができるので、整流板１６の小径
孔１６ａを通る原料ガスの温度上昇が抑えられることに
より、原料ガスの分解を抑制して基板５上に反応生成物
が付着するのを防止することができる。In this embodiment, as in the previous embodiment, the current plate 16 can be cooled by the cooling water circulating in the hollow portion 16b inside the current plate 16, so that the raw material gas passing through the small-diameter hole 16a of the current plate 16 can be cooled. By suppressing the temperature rise, the decomposition of the source gas can be suppressed, and the reaction products can be prevented from adhering to the substrate 5.
【００４４】〈第６実施例〉 図７は、本発明の第６実施例に係る気相成長装置の整流
板を示す断面図である。Sixth Embodiment FIG. 7 is a sectional view showing a current plate of a vapor phase growth apparatus according to a sixth embodiment of the present invention.
【００４５】本実施例に係る石英から成る整流板２は、
前記同様原料ガスを通すための複数の小径孔２ａが形成
されており、基板側（図では下側）に位置する表面に
は、熱反射率の大きい例えば金メッキ１７が施されてい
る。このように本実施例では、第１実施例にように反応
炉１に冷却装置１３を設ける代わりに、熱反射率の大き
い金メッキ１７等で整流板２に輻射熱等によって伝わる
熱を低減して整流板２の温度上昇を抑える構造である。
他の構成は図１に示した第１実施例と同様である。The current plate 2 made of quartz according to the present embodiment is
A plurality of small-diameter holes 2a for passing the source gas are formed in the same manner as described above, and the surface located on the substrate side (the lower side in the figure) is coated with, for example, gold plating 17 having a high thermal reflectance. As described above, in the present embodiment, instead of providing the cooling device 13 in the reaction furnace 1 as in the first embodiment, the rectification is performed by reducing the heat transmitted to the rectifying plate 2 by radiant heat or the like by the gold plating 17 or the like having a large thermal reflectance. This is a structure that suppresses a temperature rise of the plate 2.
Other configurations are the same as those of the first embodiment shown in FIG.
【００４６】本実施例においても、金メッキ１７でヒー
タ８から輻射によって伝わる熱を低減して、整流板２の
温度上昇を抑えることができるので、原料ガスの分解を
抑制して基板５上に反応生成物が付着するのを防止する
ことができる。Also in the present embodiment, the heat transmitted by the radiation from the heater 8 can be reduced by the gold plating 17 and the temperature rise of the rectifying plate 2 can be suppressed, so that the decomposition of the raw material gas is suppressed and the reaction on the substrate 5 is suppressed. The product can be prevented from adhering.
【００４７】第６実施例では、整流板２に金メッキ１７
を施したが、これ以外にも熱反射率が大きければ他のメ
ッキでもよく、また、整流板２に熱反射率の大きい金メ
ッキ１７等を施す代わりに、整流板２を輻射率の小さい
（例えば輻射率が０．５以下）ステンレスやアルミニウ
ム等の材質で形成しても同様の効果を得ることができ
る。In the sixth embodiment, the current plate 2 is plated with gold 17.
However, in addition to this, other plating may be used as long as the heat reflectance is large. Instead of applying the gold plating 17 or the like having a large heat reflectance to the rectifying plate 2, the rectifying plate 2 is made to have a small emissivity (for example, (Emissivity is 0.5 or less) The same effect can be obtained even if it is formed of a material such as stainless steel or aluminum.
【００４８】また、前記した各実施例ではシリコンの気
相成長を行う場合であったが、これ以外にも例えば化合
物半導体の気相成長やダイアモンド等の炭素の気相成長
にも適用可能である。Further, in each of the above-described embodiments, the case where the vapor phase growth of silicon is performed, but the present invention is also applicable to the vapor phase growth of a compound semiconductor or the vapor phase growth of carbon such as diamond. .
【００４９】〈第７実施例〉図８は、本発明の第７実施
例に係る気相成長装置を示す概略図である。この図に示
すように、反応炉１内の上部には、複数の小径孔２ａが
形成されている開口率が例えば０．１の円板状の整流板
２と、原料ガス，キャリアガス等のガスを供給する供給
装置３ａ，３ｂが接続されているガス導入管４ａ，４ｂ
が配設されており、反応炉１内の下部には、基板（本実
施例ではシリコン基板）５を載置する基板ホルダ６と、
基板ホルダ６を着脱自在に支持する回転軸７と、基板ホ
ルダ６および基板５を加熱するヒータ８と、ヒータ８の
熱を基板ホルダ６側に反射する複数の反射板２０が配設
されている。<Seventh Embodiment> FIG. 8 is a schematic view showing a vapor phase growth apparatus according to a seventh embodiment of the present invention. As shown in this figure, a disc-shaped rectifying plate 2 having a plurality of small-diameter holes 2a having an opening ratio of, for example, 0.1 and a raw material gas, a carrier gas, Gas introduction pipes 4a, 4b to which supply devices 3a, 3b for supplying gas are connected
A substrate holder 6 on which a substrate (a silicon substrate in this embodiment) 5 is placed,
A rotating shaft 7 for detachably supporting the substrate holder 6, a heater 8 for heating the substrate holder 6 and the substrate 5, and a plurality of reflectors 20 for reflecting the heat of the heater 8 to the substrate holder 6 are provided. .
【００５０】整流板２は、光を透過するように石英ガラ
スで形成され、反応炉１内の内周面に沿って形成した支
持台１１上に載置されており、小径孔２ａは半径中心を
通る任意の直線上（斜線部分）には形成されていない
（図９参照）。また、整流板２の上方に位置する反応炉
１の上部１ｃの少なくとも図９の斜線部分の上部に相当
する部分は、光を透過するように石英ガラスで形成され
ている。The current plate 2 is formed of quartz glass so as to transmit light, and is mounted on a support 11 formed along the inner peripheral surface in the reaction furnace 1. The small-diameter hole 2 a has a radial center. Are not formed on any straight line (hatched portion) passing through (see FIG. 9). Further, at least a portion corresponding to an upper portion of a hatched portion in FIG. 9 of the upper portion 1c of the reaction furnace 1 located above the current plate 2 is formed of quartz glass so as to transmit light.
【００５１】ガス導入管４ａ，４ｂは、反応炉１上部の
側面で整流板２の原料ガスの流れ方向上流側に対向して
配設されている。The gas introduction pipes 4 a and 4 b are arranged on the side surface of the upper part of the reaction furnace 1 so as to face the upstream side of the current plate 2 in the flow direction of the raw material gas.
【００５２】基板ホルダ６の下方に位置しているヒータ
８と反射板２０は、それぞれ回転軸７の周面に支持部材
（図示省略）で支持されており、ヒータ８は、基板ホル
ダ６の外周面の下部に形成したリブ６ａの内側に配設さ
れている。リブ６ａにより、基板ホルダ６および基板５
をヒータ８で加熱する時の熱が基板ホルダ６の周囲から
反応炉１内の上部に伝わるのを低減することができる。
ヒータ８には、加熱温度を制御するための温度制御装置
（図示省略）が接続されている。The heater 8 and the reflection plate 20 located below the substrate holder 6 are respectively supported by a support member (not shown) on the peripheral surface of the rotating shaft 7. It is arranged inside a rib 6a formed at the lower part of the surface. The rib 6a allows the substrate holder 6 and the substrate 5
When heat is heated by the heater 8, the transfer of heat from the periphery of the substrate holder 6 to the upper portion in the reaction furnace 1 can be reduced.
The heater 8 is connected to a temperature controller (not shown) for controlling the heating temperature.
【００５３】また、反応炉１内の整流板２と基板ホルダ
６間と、基板ホルダ６、ヒータ８、反射板２０の外側に
は、それぞれ反応生成物の付着等を防止する石英から成
る筒状のライナー管２１，２２が配設されている。A cylindrical tube made of quartz for preventing reaction products from adhering, etc., between the straightening plate 2 and the substrate holder 6 in the reaction furnace 1 and outside the substrate holder 6, the heater 8 and the reflection plate 20. Liner tubes 21 and 22 are provided.
【００５４】反応炉１上部１ｂの上方には、基板５の温
度を測定する２色温度計等の放射温度計２３が基板５に
対してほぼ垂直に配置されており、反応炉１の外側下部
には、回転軸７を回転駆動する回転駆動装置９と、排気
口１ｂを介して反応炉１内の圧力調整および未反応ガス
等を排気する排気装置１０と、ガス供給口１ｄを通して
ライナー管２２内にパージガスを供給するガス供給装置
２４が接続されている。Above the upper part 1b of the reaction furnace 1, a radiation thermometer 23 such as a two-color thermometer for measuring the temperature of the substrate 5 is disposed substantially perpendicular to the substrate 5, and a lower part outside the reaction furnace 1 is provided. A rotary drive unit 9 for rotating the rotary shaft 7, an exhaust unit 10 for adjusting the pressure in the reactor 1 via an exhaust port 1b and exhausting unreacted gas and the like, and a liner pipe 22 through a gas supply port 1d. A gas supply device 24 for supplying a purge gas into the inside is connected.
【００５５】放射温度計２３は、接続されている移動装
置２５により、整流板２の小径孔２ａが形成されていな
い半径中心を通る直線上（図９で示した整流板２の斜線
部分）に沿って基板５の表面に対してほぼ平行に移動す
る。The radiation thermometer 23 is moved by a connected moving device 25 onto a straight line passing through the radial center where the small-diameter hole 2a of the current plate 2 is not formed (the hatched portion of the current plate 2 shown in FIG. 9). Move substantially parallel to the surface of the substrate 5.
【００５６】移動装置２５は、リニアステージ２６上を
移動し、任意の位置で停止可能である。移動装置２６を
移動させるための手段は、ステッピングモータ，エアア
クチュエータ等の動力を使ってもよく、また、手動でも
よい。The moving device 25 moves on the linear stage 26 and can be stopped at an arbitrary position. Means for moving the moving device 26 may use power from a stepping motor, an air actuator, or the like, or may be manual.
【００５７】本実施例に係る気相成長装置は上記のよう
に構成されており、基板５への半導体薄膜の気相成長は
第１実施例と同様にして行うことができるので、ここで
は気相成長についての説明は省略する。The vapor phase growth apparatus according to this embodiment is configured as described above, and the vapor phase growth of a semiconductor thin film on the substrate 5 can be performed in the same manner as in the first embodiment. Description of phase growth is omitted.
【００５８】この時、ヒータ８、反射板２０が配設され
ているライナー管２２内には、ガス供給装置２４からガ
ス供給口１ｄを通してパージガス（例えばＨ2 ）が供給
されるので、この中に原料ガスが侵入するのを防止する
ことができる。At this time, a purge gas (for example, H 2 ) is supplied from the gas supply device 24 through the gas supply port 1d into the liner tube 22 in which the heater 8 and the reflection plate 20 are disposed. It is possible to prevent the source gas from entering.
【００５９】そして、基板５に半導体薄膜を気相成長さ
せる時に、反応炉１の上部１ｃと整流板２を通して放射
温度計２３で基板５の温度を測定し（この時の放射温度
計２３の測定波長は例えば１〜２．５μｍである）、常
に所定の温度になるようにヒータ８の温度制御装置（図
示省略）に制御信号を出力して温度制御を行う。When a semiconductor thin film is vapor-phase grown on the substrate 5, the temperature of the substrate 5 is measured by the radiation thermometer 23 through the upper part 1c of the reactor 1 and the rectifier plate 2 (measurement of the radiation thermometer 23 at this time). The wavelength is, for example, 1 to 2.5 μm), and a control signal is output to a temperature control device (not shown) of the heater 8 so as to always maintain a predetermined temperature to perform temperature control.
【００６０】この時、リブ６ａによってヒータ８の光が
遮断されるため、高温部の光が放射温度計２３に入りに
くくなっている。また、移動装置２５によって基板５の
表面に対してほぼ水平に移動可能なので、反応炉１内の
他の部分からの光が基板５に反射して放射温度計２３に
入ることが少なくなるため、基板５の任意の位置での温
度を正確に測定することができ、精度よく基板５の温度
制御を行うことができる。At this time, since the light from the heater 8 is blocked by the rib 6a, it is difficult for the light in the high temperature portion to enter the radiation thermometer 23. In addition, since the light can be moved substantially horizontally with respect to the surface of the substrate 5 by the moving device 25, light from other portions in the reaction furnace 1 is less likely to be reflected on the substrate 5 and enter the radiation thermometer 23. The temperature at an arbitrary position on the substrate 5 can be accurately measured, and the temperature of the substrate 5 can be accurately controlled.
【００６１】また、複数個の放射温度計２３を、整流板
２の小径孔２ａが形成されていない半径中心を通る直線
上に沿って基板５とほぼ平行に任意の位置に配置するこ
とにより、基板５上の複数点の温度を同時に測定するこ
とができる。By arranging a plurality of radiation thermometers 23 at an arbitrary position substantially parallel to the substrate 5 along a straight line passing through the radial center where the small-diameter hole 2a of the current plate 2 is not formed, The temperature at a plurality of points on the substrate 5 can be measured simultaneously.
【００６２】また、本実施例では、整流板２の放射温度
計２３が移動する領域に位置している部分には小径孔２
ａが形成されていなかったが、図１０に示すように整流
板２の放射温度計２３が移動する領域に位置している部
分に長穴２ｃを形成してもよい。この場合、整流板２に
形成した長穴２ｃは、基板５へ均一にガス供給が行われ
るように形成されている。In this embodiment, the small-diameter hole 2 is provided in a portion of the current plate 2 located in the area where the radiation thermometer 23 moves.
Although a was not formed, the elongated hole 2c may be formed in a portion of the current plate 2 located in the area where the radiation thermometer 23 moves as shown in FIG. In this case, the elongated holes 2 c formed in the current plate 2 are formed so that gas is uniformly supplied to the substrate 5.
【００６３】〈第８実施例〉図１１は、本発明の第８実
施例に係る気相成長装置を示す概略図である。<Eighth Embodiment> FIG. 11 is a schematic view showing a vapor phase growth apparatus according to an eighth embodiment of the present invention.
【００６４】本実施例は、反応炉１の側面上部に石英窓
（図では２ヶ所）２６，２７を形成しての外側にそれぞ
れ２色温度計等の放射温度計２３を配置し、放射温度計
２３の基板温度の測定光路上に位置しているライナー管
２１に穴２１ａ，２１ｂを形成した構成である。他の構
成は図８に示した第７実施例と同様である。In the present embodiment, quartz windows (two places in the figure) 26 and 27 are formed on the upper side of the reaction furnace 1, and a radiation thermometer 23 such as a two-color thermometer is disposed outside each of them. The configuration is such that holes 21a and 21b are formed in the liner tube 21 located on the optical path for measuring the substrate temperature of the total 23. Other configurations are the same as those of the seventh embodiment shown in FIG.
【００６５】このように本実施例では、石英窓２６，２
７、ライナー管２１の穴２１ａ，２１ｂを通して反応炉
１の側面上部に設けた放射温度計２３により、斜め上方
から基板５上の任意の位置の温度をライナー管２１によ
る光の屈折等の影響を受けることなく、且つ、リブ６ａ
によってヒータ８の光の影響を受けることなく正確に測
定することができ、精度よく基板５の温度制御を行うこ
とができる。As described above, in this embodiment, the quartz windows 26, 2
7. A radiation thermometer 23 provided on the upper side of the reaction furnace 1 through the holes 21a and 21b of the liner tube 21 allows the temperature at an arbitrary position on the substrate 5 from obliquely above to be influenced by refraction of light by the liner tube 21 and the like. Without receiving, and rib 6a
Thus, accurate measurement can be performed without being affected by light from the heater 8, and the temperature of the substrate 5 can be accurately controlled.
【００６６】ライナー管２１に穴２１ａ，２１ｂを形成
しない場合でも、ライナー管２１の測定光路にあたる部
分を測定波長の光を透過する部材で形成することによ
り、基板温度の測定が可能になる。この場合は、気相成
長時にライナー管２１の下部にも原料ガスが分解した時
に生成される反応生成物等が付着するので、ライナー管
２１の測定光路に当る部分は基板５から所定距離（例え
ば５cm以上）だけ離すことにより、その部分が汚れず、
正確な温度を測定することができる。また、ライナー管
２１の内壁面に沿ってパージガス（例えばＨ2 ）を流す
ことにより、ライナー管２１に反応生成物等が付着する
のを防止することができる。また、窓２６，２７の内側
にパージガスを流すことにより、窓２６，２７が汚れる
ことなく、正確な温度を測定することができる。Even in the case where the holes 21a and 21b are not formed in the liner tube 21, the substrate temperature can be measured by forming the portion corresponding to the measurement optical path of the liner tube 21 with a member that transmits light of the measurement wavelength. In this case, a reaction product or the like generated when the raw material gas is decomposed also adheres to the lower portion of the liner tube 21 during the vapor phase growth, so that the portion of the liner tube 21 corresponding to the measurement optical path is a predetermined distance from the substrate 5 (for example, 5cm or more), so that part is not stained,
An accurate temperature can be measured. Further, by flowing a purge gas (for example, H 2 ) along the inner wall surface of the liner tube 21, it is possible to prevent reaction products and the like from adhering to the liner tube 21. Further, by flowing the purge gas inside the windows 26 and 27, the temperature can be measured accurately without the windows 26 and 27 being stained.
【００６７】また、前記実施例では、反応炉１の側面上
部に２ヶ所の石英窓２６，２７を形成してその外側にそ
れぞれ１個の放射温度計２３を配置したが、これに限定
されることはなく、例えば反応炉１の側面上部に１ヶ所
あるいは２ヶ所以上石英窓を形成して、その外側に１個
あるいは複数個の放射温度計２３を配置する構成でもよ
い。In the above embodiment, two quartz windows 26 and 27 are formed in the upper part of the side surface of the reactor 1 and one radiation thermometer 23 is arranged outside each of them. However, the present invention is not limited to this. For example, one or more quartz windows may be formed in the upper part of the side surface of the reaction furnace 1 and one or more radiation thermometers 23 may be arranged outside the quartz window.
【００６８】また、前記実施例では、測定用窓に石英を
使用しているが、石英に限らず、測定用の光を透過する
部材であれば、ＫＢｒ等の他の材質でもよい。In the above embodiment, quartz is used for the measurement window. However, the material is not limited to quartz, and any other material such as KBr may be used as long as it is a member that transmits measurement light.
【００６９】また、前記した第７，第８実施例におい
て、基板ホルダ６と一体に回転する基板５の回転に同期
させて（基板５の任意の測定点が放射温度計２３の測定
光路上に来た時）、放射温度計２３で基板５の温度を測
定することにより、基板５が回転していても基板５の任
意の位置の温度を測定することができる。In the seventh and eighth embodiments described above, an arbitrary measurement point of the substrate 5 is set on the measurement optical path of the radiation thermometer 23 in synchronization with the rotation of the substrate 5 which rotates integrally with the substrate holder 6. When the temperature of the substrate 5 is measured by the radiation thermometer 23, the temperature of an arbitrary position on the substrate 5 can be measured even when the substrate 5 is rotating.
【００７０】また、放射温度計は２色温度計等の色温度
計でもよく、また、他の非接触温度測定手段を用いても
よい。The radiation thermometer may be a color thermometer such as a two-color thermometer or other non-contact temperature measuring means.
【００７１】[0071]
【発明の効果】以上、実施例に基づいて具体的に説明し
たように、請求項１乃至７に記載の第１の発明によれ
ば、整流板自体を直接冷却することにより整流板での原
料ガスの分解を防止することができるので、基板上に反
応生成物が付着することがなくなり、高品質の薄膜を得
ることができる。また、冷却手段が反応炉の外周部に位
置しているので、冷却手段の設置等を容易に行うことが
でき、さらにまた、冷却手段を整流板の外周部に沿って
接続する構成にすれば、冷却構造を簡易にすることがで
きる。Effect of the Invention] As has been specifically described based on examples, according to the first invention described in claims 1 to 7, the raw material in the rectifying plate by cooling the rectifier plate itself directly Since decomposition of the gas can be prevented, the reaction product does not adhere to the substrate, and a high-quality thin film can be obtained. In addition, since the cooling means is located on the outer peripheral portion of the reaction furnace, it is possible to easily install the cooling means and the like. Furthermore, if the cooling means is connected along the outer peripheral portion of the current plate, In addition, the cooling structure can be simplified.
【００７２】また、請求項６に記載の第２発明によれ
ば、基板上の任意の位置での温度測定を精度よく行うこ
とができ、また請求項７に記載の第３の発明によれば、
反応炉の側面からライナー管を通して基板上の温度測定
を行う場合でも、精度のよい温度測定を行うことができ
る。[0072] Further, according to the second invention of claim 6, the temperature measurement at an arbitrary position on the substrate can be performed accurately, also according to the third invention of claim 7 ,
Even when the temperature on the substrate is measured from the side of the reactor through the liner tube, accurate temperature measurement can be performed.
【図１】本発明の第１実施例に係る気相成長装置を示す
概略断面図である。FIG. 1 is a schematic sectional view showing a vapor phase growth apparatus according to a first embodiment of the present invention.
【図２】図１に示した気相成長装置の整流板を示す斜視
図である。FIG. 2 is a perspective view showing a current plate of the vapor phase growth apparatus shown in FIG.
【図３】本発明の第２実施例に係る気相成長装置を示す
概略断面図である。FIG. 3 is a schematic sectional view showing a vapor phase growth apparatus according to a second embodiment of the present invention.
【図４】本発明の第３実施例に係る気相成長装置を示す
概略断面図である。FIG. 4 is a schematic sectional view showing a vapor phase growth apparatus according to a third embodiment of the present invention.
【図５】本発明の第４実施例に係る気相成長装置を示す
概略断面図である。FIG. 5 is a schematic sectional view showing a vapor phase growth apparatus according to a fourth embodiment of the present invention.
【図６】本発明の第５実施例に係る気相成長装置の整流
板を示す斜視図である。FIG. 6 is a perspective view showing a current plate of a vapor phase growth apparatus according to a fifth embodiment of the present invention.
【図７】本発明の第６実施例に係る気相成長装置の整流
板を示す断面図である。FIG. 7 is a sectional view showing a current plate of a vapor phase growth apparatus according to a sixth embodiment of the present invention.
【図８】本発明の第７実施例に係る気相成長装置を示す
概略断面図である。FIG. 8 is a schematic sectional view showing a vapor phase growth apparatus according to a seventh embodiment of the present invention.
【図９】図７に示した気相成長装置の整流板を示す平面
図である。FIG. 9 is a plan view showing a current plate of the vapor phase growth apparatus shown in FIG. 7;
【図１０】図７に示した気相成長装置の整流板の変形例
を示す平面図である。FIG. 10 is a plan view showing a modification of the current plate of the vapor phase growth apparatus shown in FIG.
【図１１】本発明の第８実施例に係る気相成長装置を示
す概略断面図である。FIG. 11 is a schematic sectional view showing a vapor phase growth apparatus according to an eighth embodiment of the present invention.
【図１２】従来の気相成長装置の一例を示す概略図であ
る。FIG. 12 is a schematic view showing an example of a conventional vapor phase growth apparatus.
【図１３】従来の気相成長装置の一例を示す概略図であ
る。FIG. 13 is a schematic view showing an example of a conventional vapor phase growth apparatus.
１ 反応炉 ２，１６ 整流板 ２ａ，１６ａ 小径孔 ２ｂ 長穴 ３，３ａ，３ｂ ガス供給装置 ５ 基板 ６ 基板ホルダ ６ａ リブ ８ ヒータ １３ 冷却装置（冷却手段） １７ 金メッキ ２１，２２ ライナー管 ２１ａ，２１ｂ 穴 ２３ 放射温度計（温度測定手段） ２５ 移動装置（移動手段） ２６，２７ 石英窓 ３０ 流路（冷却手段） ３２ 冷却パイプ（冷却手段） ３３ フィン（冷却手段） DESCRIPTION OF SYMBOLS 1 Reaction furnace 2, 16 Rectifier plate 2a, 16a Small diameter hole 2b Long hole 3, 3a, 3b Gas supply device 5 Substrate 6 Substrate holder 6a Rib 8 Heater 13 Cooling device (cooling means) 17 Gold plating 21, 22 Liner tube 21a, 21b Hole 23 Radiation thermometer (temperature measuring means) 25 Moving device (moving means) 26, 27 Quartz window 30 Flow path (cooling means) 32 Cooling pipe (cooling means) 33 Fin (cooling means)
───────────────────────────────────────────────────── フロントページの続き (72)発明者 大嶺 俊光 神奈川県川崎市幸区小向東芝町１ 株式 会社東芝 総合研究所内 (56)参考文献 特開 平３−287772（ＪＰ，Ａ) 特開 平４−58530（ＪＰ，Ａ) 特公 平７−32128（ＪＰ，Ｂ２) (58)調査した分野(Int.Cl.7，ＤＢ名) C23C 16/00 - 16/56 H01L 21/205 H01L 21/31 ──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Toshimitsu Omine 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki-shi, Kanagawa Prefecture Toshiba Research Institute Co., Ltd. (56) References JP-A-3-287772 (JP, A) 4-58530 (JP, A) JP 7-32128 (JP, B2) (58) Fields investigated (Int. Cl. 7 , DB name) C23C 16/00-16/56 H01L 21/205 H01L 21 / 31
Claims (7)
炉内に配設した基板ホルダ上の基板を加熱手段により加
熱して前記基板表面に薄膜を気相成長させる気相成長装
置において、前記基板に対して前記原料ガスの流れ方向
上流側に配設した複数の孔を有する整流板と、該整流板
の外周部内に埋設した該整流板を冷却する冷却手段とを
具備し、前記整流板の外周部は前記反応炉の外側に位置
していることを特徴とする気相成長装置。In a vapor phase growth apparatus, a raw material gas is supplied into a reaction furnace, and a substrate on a substrate holder provided in the reaction furnace is heated by a heating means to vapor-grow a thin film on the substrate surface. A rectifying plate having a plurality of holes disposed on the upstream side in the flow direction of the raw material gas with respect to the substrate, and cooling means for cooling the rectifying plate embedded in an outer peripheral portion of the rectifying plate , The outer periphery of the current plate is located outside the reactor
Vapor deposition apparatus according to claim that you are.
炉内に配設した基板ホルダ上の基板を加熱手段により加
熱して前記基板表面に薄膜を気相成長させる気相成長装
置において、前記基板に対して前記原料ガスの流れ方向
上流側に配設した複数の孔を有する整流板と、該整流板
を冷却する冷却手段とを具備し、前記整流板の外周部は
前記反応炉の外側に位置しており、前記整流板の外周部
に前記冷却手段を収納可能な収納部が形成され、該収納
部に前記冷却手段が収納されていることを特徴とする気
相成長装置。2. A gas phase growth apparatus for supplying a source gas into a reaction furnace and heating a substrate on a substrate holder disposed in the reaction furnace by heating means to vapor-grow a thin film on the substrate surface. A rectifying plate having a plurality of holes disposed on the upstream side in the flow direction of the source gas with respect to the substrate, and cooling means for cooling the rectifying plate;
An outer peripheral portion of the current plate , which is located outside the reaction furnace;
And a storage part capable of storing the cooling means is formed in the storage part, and the cooling means is stored in the storage part.
けられていることを特徴とする請求項１又は請求項２に
記載の気相成長装置。 3. The straightening vane extends through the reactor.
Claim 1 or Claim 2 characterized in that
The vapor phase growth apparatus according to the above.
５以下であることを特徴とする請求項１乃至請求項３の
いずれかに記載の気相成長装置。4. The current plate has an emissivity on the surface of 0.5.
The vapor phase growth apparatus according to any one of claims 1 to 3 , wherein the number is 5 or less.
り形成されていることを特徴とする請求項１乃至請求項
３のいずれかに記載の気相成長装置。Wherein said straightening vanes, vapor phase deposition apparatus according to any one of claims 1 to 3, characterized in that the surface is formed by a heat reflecting material.
しくは前記基板ホルダの温度を非接触で測定する温度測
定手段を有し、前記整流板の前記温度測定手段から前記
基板への温度測定光路と交差する部分に穴が形成されて
いるか、もしくは前記交差する部分は測定波長の光が透
過する部材で形成されていることを特徴とする請求項１
乃至請求項５のいずれかに記載の気相成長装置。 6. A temperature measuring means for measuring the temperature of the substrate or the substrate holder disposed opposite to the substrate in a non-contact manner, wherein the temperature of the rectifying plate is measured from the temperature measuring means to the substrate. A hole is formed at the intersection with the optical path
Dolphin claim 1 or portions the intersecting, characterized in that the light of the measuring wavelength is formed of a member transmitting,
The vapor-phase growth apparatus according to claim 5 .
壁に前記原料ガスの分解によって生成される反応生成物
の付着を防止するライナー管と、該ライナー管の外側に
配設され前記基板もしくは基板ホルダの温度を非接触で
測定する温度測定手段とを有し、前記ライナー管の前記
温度測定手段から前記基板ヘの温度測定光路と交差する
部分に穴が形成されているか、もしくは前記交差する部
分は測定波長の光が透過する部材で形成されていること
を特徴とする請求項１乃至請求項５のいずれかに記載の
気相成長装置。7. A liner pipe to prevent adhesion of the reaction product produced by the decomposition of the disposed reactor the material gas on the inner wall of the reactor, the disposed outside the liner tube and a temperature measuring means for measuring the temperature of the substrate or the substrate holder without contact, or hole from said temperature measuring means of the liner pipe at the intersection with the temperature measuring optical path of the substrate f is formed, or the <br/> vapor deposition apparatus according to any one of claims 1 to 5 the intersection is characterized by light measurement wavelength is formed of a member transmitting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00589192A JP3210051B2 (en) | 1992-01-16 | 1992-01-16 | Vapor phase growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00589192A JP3210051B2 (en) | 1992-01-16 | 1992-01-16 | Vapor phase growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05190464A JPH05190464A (en) | 1993-07-30 |
| JP3210051B2 true JP3210051B2 (en) | 2001-09-17 |
Family
ID=11623525
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP00589192A Expired - Lifetime JP3210051B2 (en) | 1992-01-16 | 1992-01-16 | Vapor phase growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3210051B2 (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004193509A (en) * | 2002-12-13 | 2004-07-08 | Watanabe Shoko:Kk | Shower nozzle and film-forming apparatus |
| CN100495655C (en) * | 2003-09-03 | 2009-06-03 | 东京毅力科创株式会社 | Gas treatment device and heat readiting method |
| JP5140957B2 (en) * | 2005-12-27 | 2013-02-13 | 東京エレクトロン株式会社 | Deposition equipment |
| JP5165952B2 (en) * | 2007-07-20 | 2013-03-21 | 株式会社ニューフレアテクノロジー | Vapor growth apparatus and vapor growth method |
| CN101569000B (en) | 2007-09-03 | 2011-07-13 | 佳能安内华股份有限公司 | Substrate heat-treating apparatus, and substrate heat-treating method |
| JP4913695B2 (en) * | 2007-09-20 | 2012-04-11 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate mounting table used therefor |
| JP4601701B2 (en) * | 2008-11-13 | 2010-12-22 | シャープ株式会社 | Vapor phase growth apparatus and gas supply method |
| JP5732284B2 (en) * | 2010-08-27 | 2015-06-10 | 株式会社ニューフレアテクノロジー | Film forming apparatus and film forming method |
| JP2013115312A (en) * | 2011-11-30 | 2013-06-10 | Stanley Electric Co Ltd | Crystal growth apparatus |
| JP2013207196A (en) * | 2012-03-29 | 2013-10-07 | Nuflare Technology Inc | Deposition apparatus and deposition method |
| CN104576456A (en) * | 2014-12-24 | 2015-04-29 | 宜兴市环洲微电子有限公司 | Flow-evening source baffle plate for diffusion ventilation |
| US9888528B2 (en) * | 2014-12-31 | 2018-02-06 | Applied Materials, Inc. | Substrate support with multiple heating zones |
| US10157764B2 (en) * | 2015-06-29 | 2018-12-18 | Varian Semiconductor Equipment Associates, Inc. | Thermal shield for electrostatic chuck |
| JP6606403B2 (en) | 2015-11-05 | 2019-11-13 | 株式会社ニューフレアテクノロジー | Shower plate, vapor phase growth apparatus, and vapor phase growth method |
| CN113512665B (en) | 2021-07-14 | 2021-12-21 | 上海铂世光半导体科技有限公司 | Heat dissipation platform of special water course design of alloy material |
-
1992
- 1992-01-16 JP JP00589192A patent/JP3210051B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05190464A (en) | 1993-07-30 |
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