CN104851772A - Liftable ceramic baffle plate structure - Google Patents
Liftable ceramic baffle plate structure Download PDFInfo
- Publication number
- CN104851772A CN104851772A CN201510157531.6A CN201510157531A CN104851772A CN 104851772 A CN104851772 A CN 104851772A CN 201510157531 A CN201510157531 A CN 201510157531A CN 104851772 A CN104851772 A CN 104851772A
- Authority
- CN
- China
- Prior art keywords
- reaction chamber
- ceramic ring
- ceramic
- baffle plate
- plate structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention provides a liftable ceramic baffle plate structure, and mainly solves the problem that a wafer transfer opening of existing equipment influences energy field distribution. The structure includes a reaction chamber, a ceramic ring, a ceramic ring A and a ceramic ring B. The abovementioned ceramic ring A is mounted in the reaction chamber, is placed at a lower part, and covers half of the area of a side face of the lower part of the reaction chamber; the abovementioned ceramic ring B is mounted in the reaction chamber, is placed at the upper part, and covers all the area of a side face of the upper part of the reaction chamber; and the abovementioned ceramic ring covers the rest of an inner side wall surface of the reaction chamber, and is connected with a connecting rod. The novel structure provides a closed, regular and material-consistent reaction environment for a film manufacturing process, and influence of the geometric structure and material of the reaction chamber on the manufacturing process is reduced to the lowest, thereby ensuring the quality of a film product. The liftable ceramic baffle plate structure has the characteristics of being simple and reasonable in structure, and being easy to popularize in the technical field of semiconductor film deposition application and preparation.
Description
Technical field
The present invention relates to a kind of lifting change ceramic ring that can pass through in the position of reaction chamber, the equipment that realizes ensures when technique to be wrapped up by ceramic material completely in chamber, a kind of structure that the biography sheet mouth that pottery can also be blocked after technique terminates comes out, belongs to semiconductive thin film deposition applications and preparing technical field.
Background technology
In the processing procedure of film, the electrical conductivity of the gap of inside cavity, step, different materials all can have a huge impact in the distribution of radio frequency field and plasma.When the situation of skewness occurs, great impact will be produced on thin film manufacture process, make uniformity index exceed the scope of product requirement.The general mucosal structure of existing equipment is irregular circle, passes outlet for lantern slide and can have more one piece of coffin.The distribution that have impact on above-mentioned two kinds of energy field that this block coffin is serious just.
Summary of the invention
The present invention is for the purpose of solving the problem, the biography sheet mouth mainly solving existing equipment to distribute influential problem to energy field, and provide one can ensure formation symmetry, evenly in thin film manufacture process, there is no the ring seal space of lofty structure, the novel lifting ceramic baffle plate structure improving product quality in semicon industry thin film manufacture process can be suitable for.
For achieving the above object, the present invention adopts following technical proposals: a kind of liftable ceramic baffle plate structure, comprises reaction chamber (2), ceramic ring (1), ceramic ring A (3), ceramic ring B (4).Above-mentioned ceramic ring A (3) is arranged in reaction chamber (2), is positioned over bottom, and is blocked by the area of reaction chamber (2) lower side half; Above-mentioned ceramic ring B (4) is arranged in reaction chamber (2), is positioned over top, is blocked by areas whole for the upper side of reaction chamber (2); Above-mentioned ceramic ring (1) shelters from all the other interior side-wall surface of reaction chamber (2), and ceramic ring (1) is connected with connecting rod (5).
Beneficial effect of the present invention and feature are:
This new structure provides closed, rule, material is a consistent reaction environment for thin film manufacture process, and by reaction chamber geometry and material, the impact on manufacturing process drops to minimum, ensures the quality of film product.Have simple and reasonable for structure, be easy to the feature promoted in semiconductive thin film deposition applications and preparing technical field.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Fig. 2 is the longitudinal section cutaway view of Fig. 1, is also the using state schematic diagram of piece delivery process.
Embodiment
Embodiment
With reference to Fig. 1-2, a kind of liftable ceramic baffle plate structure, comprises reaction chamber 2, ceramic ring 1, ceramic ring A3, ceramic ring B4.Above-mentioned ceramic ring A3 is arranged in reaction chamber 2, is positioned over bottom, and is blocked by the area of reaction chamber 2 lower side half; Above-mentioned ceramic ring B4 is arranged in reaction chamber 2, is positioned over top, is blocked by areas whole for the upper side of reaction chamber 2; Above-mentioned ceramic ring 1 shelters from all the other interior side-wall surface of reaction chamber 2, and ceramic ring 1 is connected with connecting rod 5.
Operation principle of the present invention: ceramic ring 1 is driven by connecting rod 5, can move up and down in reaction chamber 2.When reaction chamber starts thin film manufacture process, connecting rod 5 drives ceramic ring 1 to move to upper position, and reaction chamber 2 internal face is all hidden by ceramic ring 1 ceramic ring A3, ceramic ring B4.In processing procedure, equipment is in the complete closed circle be made up of pottery completely all the time, and energy field is uniformly distributed.At the end of processing procedure, connecting rod 5 drives ceramic ring 1 to move to lower position, and the biography sheet mouth of reaction chamber 2 comes out, and wafer is transported by manipulator and is transported in reaction chamber 2 by new wafer, repeating connecting rod 5 drives ceramic ring 1 to move to the action of upper position, completes a circulation.
Claims (1)
1. a liftable ceramic baffle plate structure, comprise reaction chamber (2), it is characterized in that: it also comprises ceramic ring (1), ceramic ring A (3) and ceramic ring B (4), above-mentioned ceramic ring A (3) is arranged in reaction chamber (2), be positioned over bottom, and the area of reaction chamber (2) lower side half is blocked; Above-mentioned ceramic ring B (4) is arranged in reaction chamber (2), is positioned over top, is blocked by areas whole for the upper side of reaction chamber (2); Above-mentioned ceramic ring (1) shelters from all the other interior side-wall surface of reaction chamber (2), and ceramic ring (1) is connected with connecting rod (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510157531.6A CN104851772A (en) | 2015-04-03 | 2015-04-03 | Liftable ceramic baffle plate structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510157531.6A CN104851772A (en) | 2015-04-03 | 2015-04-03 | Liftable ceramic baffle plate structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104851772A true CN104851772A (en) | 2015-08-19 |
Family
ID=53851331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510157531.6A Pending CN104851772A (en) | 2015-04-03 | 2015-04-03 | Liftable ceramic baffle plate structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104851772A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106505009A (en) * | 2015-09-08 | 2017-03-15 | 沈阳拓荆科技有限公司 | A kind of ceramic baffle plate with metal clamp structure |
| CN112877775A (en) * | 2020-12-30 | 2021-06-01 | 华灿光电（浙江）有限公司 | Reactor of metal organic chemical vapor deposition equipment |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010054484A1 (en) * | 1999-11-22 | 2001-12-27 | Mitsuaki Komino | Plasma processor, cluster tool, and method of controlling plasma |
| CN1546743A (en) * | 2003-12-05 | 2004-11-17 | 清华大学 | Single slice three chambers type infrared heating superhigh vacuum CVD epitaxial system |
| US20060054090A1 (en) * | 2004-09-15 | 2006-03-16 | Applied Materials, Inc. | PECVD susceptor support construction |
| CN101809708A (en) * | 2007-07-27 | 2010-08-18 | 马特森技术公司 | Advanced multi-workpiece processing chamber |
| CN203284452U (en) * | 2013-05-17 | 2013-11-13 | 沈阳拓荆科技有限公司 | Single reaction cavity film deposition equipment with film transferring cavity |
| CN203377195U (en) * | 2013-06-08 | 2014-01-01 | 天通吉成机器技术有限公司 | Reaction chamber for dry plasma etching machine |
| CN104213102A (en) * | 2014-09-01 | 2014-12-17 | 沈阳拓荆科技有限公司 | Cavity airflow direction changeable structure |
-
2015
- 2015-04-03 CN CN201510157531.6A patent/CN104851772A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010054484A1 (en) * | 1999-11-22 | 2001-12-27 | Mitsuaki Komino | Plasma processor, cluster tool, and method of controlling plasma |
| CN1546743A (en) * | 2003-12-05 | 2004-11-17 | 清华大学 | Single slice three chambers type infrared heating superhigh vacuum CVD epitaxial system |
| US20060054090A1 (en) * | 2004-09-15 | 2006-03-16 | Applied Materials, Inc. | PECVD susceptor support construction |
| CN101809708A (en) * | 2007-07-27 | 2010-08-18 | 马特森技术公司 | Advanced multi-workpiece processing chamber |
| CN203284452U (en) * | 2013-05-17 | 2013-11-13 | 沈阳拓荆科技有限公司 | Single reaction cavity film deposition equipment with film transferring cavity |
| CN203377195U (en) * | 2013-06-08 | 2014-01-01 | 天通吉成机器技术有限公司 | Reaction chamber for dry plasma etching machine |
| CN104213102A (en) * | 2014-09-01 | 2014-12-17 | 沈阳拓荆科技有限公司 | Cavity airflow direction changeable structure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106505009A (en) * | 2015-09-08 | 2017-03-15 | 沈阳拓荆科技有限公司 | A kind of ceramic baffle plate with metal clamp structure |
| CN112877775A (en) * | 2020-12-30 | 2021-06-01 | 华灿光电（浙江）有限公司 | Reactor of metal organic chemical vapor deposition equipment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150819 |
|
| RJ01 | Rejection of invention patent application after publication |