JPH0456770A - Method for cleaning plasma cvd device - Google Patents
Method for cleaning plasma cvd deviceInfo
- Publication number
- JPH0456770A JPH0456770A JP16608490A JP16608490A JPH0456770A JP H0456770 A JPH0456770 A JP H0456770A JP 16608490 A JP16608490 A JP 16608490A JP 16608490 A JP16608490 A JP 16608490A JP H0456770 A JPH0456770 A JP H0456770A
- Authority
- JP
- Japan
- Prior art keywords
- frequency
- plasma cvd
- cleaning
- power source
- mixed gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims description 22
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 18
- 238000002156 mixing Methods 0.000 claims abstract description 9
- 235000012431 wafers Nutrition 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 239000007795 chemical reaction product Substances 0.000 abstract description 6
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminium flouride Chemical compound F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 abstract description 2
- 239000008246 gaseous mixture Substances 0.000 abstract 2
- 239000000376 reactant Substances 0.000 abstract 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 18
- 239000007789 gas Substances 0.000 description 17
- 239000010409 thin film Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- 238000002791 soaking Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
この発明はプラズマＣＶＤ装置のクリーニング方法に関
し、詳しくは、ＣＶＤ装置の反応炉内の電極にＡλＦ３
を発生させることなく反応炉内をドライクリーニングす
る方法に関する。Detailed Description of the Invention [Industrial Application Field] The present invention relates to a method for cleaning a plasma CVD apparatus, and more specifically, the present invention relates to a method for cleaning a plasma CVD apparatus.
The present invention relates to a method for dry cleaning the inside of a reactor without generating.
［従来の技術］
半導体ＩＣの製造においては、ウェハの表面に酸化シリ
コンなどの薄膜を形成する工程がある。[Prior Art] In the manufacture of semiconductor ICs, there is a step of forming a thin film of silicon oxide or the like on the surface of a wafer.
薄膜の形成方法には化学的気相成長法（ＣＶＤ）が用い
られており、ＣＶＤ法は大別すると、常圧法、減圧法お
よびプラズマ法の３種類がある。最近の超ＬＳＩにおい
ては高集積化に対応して高品質で高精度な薄膜が要求さ
れ、従来の常圧、または減圧ＣＶＤ法では対応が困難と
なり、プラズマＣＶＤ法が注目されている。この方法は
真空中において反応ガスをグロー放電させてプラズマ化
して反応に必要なエネルギーを得るもので、ステップカ
バレージ（まわり込み、またはパターン段差部の被覆性
）が良好で、また膜質が強くて耐湿性が優れているなど
の特長があり、さらに成膜速度（デポレート）が減圧法
に比べて極めて速い点が有利である。Chemical vapor deposition (CVD) is used as a method for forming thin films, and CVD methods can be roughly divided into three types: normal pressure method, reduced pressure method, and plasma method. In recent VLSIs, high-quality and highly-accurate thin films are required in response to high integration, making it difficult to meet the demands of conventional normal pressure or low-pressure CVD methods, and plasma CVD methods are attracting attention. In this method, the reaction gas is glow-discharged in a vacuum to turn it into plasma to obtain the energy necessary for the reaction.It has good step coverage (wrapping around or coverage of pattern steps), and has a strong film quality that is moisture resistant. It has features such as superior properties, and has the advantage that the deposition rate is extremely fast compared to the reduced pressure method.
［解決しようとする課題］
プラズマＣＶＤ装置でシリコン酸化膜またはンリコン窒
化膜を連続して生成すると、反応炉の内壁面や電極など
に反応生成物が付着し、これがある程度以上になると剥
離してプラズマ放電を阻害し、また剥離した生成物が異
物となって被処理のシリコンウェハを汚染し、その品質
が低下する。[Problem to be solved] When silicon oxide films or silicon nitride films are continuously produced in a plasma CVD device, reaction products adhere to the inner wall surface of the reactor, electrodes, etc., and when they reach a certain level, they peel off and the plasma Discharge is inhibited, and the peeled off products become foreign matter that contaminates the silicon wafer to be processed, deteriorating its quality.
これに対して、適当な枚数のウェハの処理ごとに、プラ
ズマエツチングにより反応炉の内壁や電極などをクリー
ニングしなければならない。On the other hand, the inner walls of the reactor, electrodes, etc. must be cleaned by plasma etching every time a suitable number of wafers are processed.
従来のクリーニング方法は、ＣＦ４と０２の混合ガスを
使用し、これに高周波電圧を加圧してグロー放電し、エ
ツチングにより反応生成物の異物を除去するものであっ
たが、電極のアルミニュームＡλとＣＦ４の弗素が化合
して弗化アルミニューム（ＡＪＩ Ｆ３ ）が生じ、こ
れが１対の電極の中心部にスパッタされて付着する現象
があった。ＡｌＦ２が電極に付着すると、次の薄膜の生
成時に堆積速度の変化や膜厚のムラが発生し、また、か
えって異物が多発するなどＣＶＤ装置の性能が劣化する
。さらに、付着したＡｌＦ２を除去する作業が別途に必
要となるなど、半導体ＩＣの品質と製造歩留まりが低下
する欠点があった。The conventional cleaning method uses a mixed gas of CF4 and 02, pressurizes it with a high frequency voltage to cause glow discharge, and removes foreign substances from the reaction product by etching. There was a phenomenon in which fluorine in CF4 was combined to produce aluminum fluoride (AJIF3), which was sputtered and attached to the center of a pair of electrodes. If AlF2 adheres to the electrode, the deposition rate will change and the film thickness will become uneven when the next thin film is formed, and the performance of the CVD apparatus will deteriorate, such as the occurrence of more foreign matter. Furthermore, there is a drawback that the quality and manufacturing yield of semiconductor ICs are lowered, such as requiring a separate operation to remove the adhered AlF2.
この発明は以上に鑑みてなされたもので、ＡｌＦ２を発
生することなくプラズマＣＶＤａｉｔの反応炉をクリー
ニングすることができる方法を提供することを目的とす
るものである。The present invention has been made in view of the above, and an object thereof is to provide a method capable of cleaning a plasma CVDait reactor without generating AlF2.
［課題を解決するための手段］
この発明は、プラズマＣＶＤ装置の反応炉内にＣＦ４と
０２の混合ガスを導入し、この混合ガスの雰囲気下で、
高周波電源により高周波電圧を加圧してグロー放電を発
生させて行うクリーニングにおいて、高周波電源の周波
数を１３．５６ＫＨ２とし、ＣＦ４と０２の混合割合を
、ＣＦ４／（ＣＦ４ ＋ＯＯ）＝ （０，６〜０．９）
の範囲とするプラズマＣＶＤ装置のクリーニング方法で
ある。[Means for Solving the Problems] The present invention introduces a mixed gas of CF4 and 02 into the reactor of a plasma CVD apparatus, and in an atmosphere of this mixed gas,
In cleaning performed by pressurizing high-frequency voltage with a high-frequency power source to generate glow discharge, the frequency of the high-frequency power source is 13.56KH2, and the mixing ratio of CF4 and 02 is CF4/(CF4 +OO) = (0,6~0 .9)
This is a cleaning method for a plasma CVD apparatus that covers the following range.
上記において、高周波電源の供給パワーを４００〜６０
０Ｗとし、反応炉内の混合ガスの圧力を３．０〜８．Ｏ
Ｔｏ ｒ ｒとする。In the above, the supply power of the high frequency power supply is 400 to 60
0W, and the pressure of the mixed gas in the reactor is 3.0~8. O
To r r.
［作用コ
この発明によるクリーニング方法においては、従来の方
法と同様にＣＦ４ （４弗化炭素）と酸素０２の混合
ガスに高周波電圧を加圧し、グロー放電させるものであ
るが、従来の高周波電源の周波数は５０ＫＨｚの比較的
に低い周波数であった。[Function] In the cleaning method according to the present invention, a high-frequency voltage is applied to a mixed gas of CF4 (carbon tetrafluoride) and oxygen 02 to cause a glow discharge, as in the conventional method, but the conventional high-frequency power source The frequency was a relatively low frequency of 50 KHz.
この発明の発明者の実験によると加圧する周波数が、Ａ
Ｊ Ｆ ａの付着に大きく関与しているのではないか
と考えられた。すなわち、従来の５０ＫＨ２の代わりに
、遥かに高い周波数１３．５６ＫＨ２（電波法により一
般的に工業生産機器に許可された特定周波数）を使用し
、従来と同一の混合ガスによりクリーニングを行うと、
電極に対するＡｌＦ２の付着が全熱、または殆どないこ
とが見出された。ただし、ＡｌＦ２の付着の周波数に対
する依存特性は、周波数が特定周波数に限定されている
ために種々の周波数について実験されず、その理論的解
釈は推測の域を出ないが、周波数によりイオンの流動特
性が変わり、高い周波数では流動しにくくてＡＪＩのス
パッタが少ないのではないかと考えられる。いずれにし
ても、ＡｌＦ２が付着しないことは実用上極めて有利で
ある。なお、周波数１３．５６ＭＨｚの電源は容易に設
備することができ、既にＣＶＤ装置に設けられているも
のである。According to experiments by the inventor of this invention, the frequency of pressurization is A
It was thought that it may be largely involved in the adhesion of JFa. In other words, if we use a much higher frequency of 13.56KH2 (a specific frequency generally permitted for industrial production equipment according to the Radio Law) instead of the conventional 50KH2, and perform cleaning with the same mixed gas as before,
It was found that there was no or very little adhesion of AlF2 to the electrode. However, the dependence of AlF2 adhesion on frequency has not been tested at various frequencies because the frequency is limited to a specific frequency, and the theoretical interpretation remains speculative. It is thought that this may be due to the fact that at high frequencies, it is difficult to flow and there is less AJI spatter. In any case, it is extremely advantageous in practice that AlF2 does not adhere. Note that a power source with a frequency of 13.56 MHz can be easily installed and is already provided in the CVD apparatus.
次に、周波数を１３．５６ＭＨｚとして、ＣＦ４と０２
の混合割合を種々変化してクリーニングの速度（クリー
ニングレート）を計測したところ、ＣＦ４ ／ （ＣＦ
４ ＋０２ ）が（０，６〜０．９）で最大値となり、
これ以外の割合では速度が急激に低下することが判明し
た。この場合ＡＪ！Ｆ３は勿論発生しない。以上の実験
を根拠とし、この発明においては、高周波電源の周波数
として１３゜５６ＭＨｚを採用し、混合ガスの混合割合
、ＣＦ４ ／ （ＣＦ４ ＋０２ ）を（０，６〜０．
９）の範囲に設定してＡｌＦ２が発生せず、速度の速い
クリーニングを行うものである。Next, with the frequency set to 13.56MHz, CF4 and 02
When the cleaning speed (cleaning rate) was measured by varying the mixing ratio of CF4/(CF
4 +02) becomes the maximum value at (0,6~0.9),
It was found that at ratios other than this, the speed decreased rapidly. In this case AJ! Of course, F3 does not occur. Based on the above experiments, in this invention, 13°56MHz is adopted as the frequency of the high-frequency power supply, and the mixing ratio of the mixed gas, CF4 / (CF4 +02), is set at (0.6 to 0.0.
9) to perform cleaning at a high speed without generating AlF2.
次に、続く実験によりクリーニングレートは反応炉内の
混合ガスの圧力と、高周波電源より供給されるパワーに
大きく依存することが知られた。Next, subsequent experiments revealed that the cleaning rate largely depends on the pressure of the mixed gas in the reactor and the power supplied by the high-frequency power source.
たたし、これらはプラズマＣＶＤ装置の形状寸法に依存
する筈である。そこで、従来実用されているプラズマＣ
ＶＤ装置に対して、混合ガスの圧力と高周波電源の供給
パワーを、前記の圧力（３゜０〜８．０）Ｔｏ ｒ ｒ
と、パワーの範囲（４００〜６００）Ｗに特定し、従来
の方法に比べて極めて高速のクリーニングがなされるも
のである。However, these should depend on the shape and dimensions of the plasma CVD apparatus. Therefore, the conventional plasma C
For the VD device, the pressure of the mixed gas and the power supplied from the high frequency power source were adjusted to the above pressure (3°0 to 8.0) Torr.
This method specifies the power range (400 to 600 W), and performs cleaning at an extremely high speed compared to conventional methods.
［実施例コ
以下、この発明の具体例について図面を参照して詳細に
説明する。[Embodiments] Hereinafter, specific examples of the present invention will be described in detail with reference to the drawings.
第１図はこの発明のクリーニング方法が適用されるプラ
ズマＣＶＤ装置１の構造を示す。図において、筐体（反
応炉） １０は気密とされ、そのベース１０１にヒータ
ー２１と均熱板２２とよりなるサセプタ２０を固設し、
これを接地電極とする。筐体の蓋板１０２に金属製のノ
ズル部３０を固定し、その下部にアルミニューム製の円
盤状のシャワー電極４０を絶縁リング１０３により支持
する。シャワー電極に対して高周波電圧を加圧する高周
波電源７が設けられる。反応処理においては、筐体ｌＯ
の側面に設けられた搬入／搬出路５０のゲート５１を開
き、キャリッジ５２によりウェハ６を搬入して均熱板２
２に載置する。ゲートを閉じて筐体内部を真空とした後
、ヒーターにより均熱板が加熱され、これに載置された
ウェハが所定の温度となると、インレット３１゜３２よ
り所定の反応ガスおよびキャリヤーガスが吸入されてノ
ズル部３０の内部で混合され、シャワー電極の噴射孔４
１より噴射される。ここで、シャワー電極に高周波電圧
が加圧されるとグロー放電により反応ガスがプラズマ化
し、反応による生成物がウェハの表面に蒸着して薄膜が
形成される。FIG. 1 shows the structure of a plasma CVD apparatus 1 to which the cleaning method of the present invention is applied. In the figure, a case (reactor) 10 is made airtight, and a susceptor 20 consisting of a heater 21 and a heat equalizing plate 22 is fixed to its base 101.
This is used as the ground electrode. A metal nozzle part 30 is fixed to a lid plate 102 of the casing, and an aluminum disk-shaped shower electrode 40 is supported by an insulating ring 103 at the bottom thereof. A high frequency power source 7 is provided that applies a high frequency voltage to the shower electrode. In reaction processing, the housing lO
Open the gate 51 of the loading/unloading path 50 provided on the side surface of
Place it on 2. After the gate is closed and the inside of the housing is evacuated, the heating plate is heated by a heater, and when the wafer placed on the plate reaches a predetermined temperature, predetermined reaction gas and carrier gas are sucked in from the inlets 31 and 32. is mixed inside the nozzle part 30, and the injection hole 4 of the shower electrode is
It is injected from 1. Here, when a high frequency voltage is applied to the shower electrode, the reaction gas is turned into plasma by glow discharge, and the products of the reaction are deposited on the surface of the wafer to form a thin film.
反応後のガスは矢印の経路を通って排気口＋０４より外
部に排出される。以上の反応処理により、筐体（反応炉
）の内壁やシャワー電極、均熱板などに反応生成物が付
着するので、所定の枚数のウェハの処理が終了すると反
応ガスの供給を停止し、インレット３１と３２よりＣＦ
４と０２が導入され、ノズル部３０で混合されてシャワ
ー電極より噴射され、付着した反応生成物がエツチング
により除去される。The gas after the reaction is discharged to the outside from the exhaust port +04 through the path indicated by the arrow. Due to the above reaction process, reaction products adhere to the inner wall of the housing (reactor), the shower electrode, the soaking plate, etc., so when the predetermined number of wafers have been processed, the supply of reaction gas is stopped and the inlet CF from 31 and 32
4 and 02 are introduced, mixed in the nozzle section 30 and sprayed from the shower electrode, and the attached reaction products are removed by etching.
第２図（ａ） 、（ｂ） 、（ｃ）は、この発明のクリ
ーニング方法を上記のプラズマＣＶＤ装置に適用する場
合の根拠となる実験データを示すもので、図（ａ）は混
合ガスノ混合割合ＣＦ４／ （ＣＦ４ ＋０２ ）に対
するクリーニングレート（オングストローム／ｍ１ｎ）
の曲線である。図により混合割合が０゜６〜０．９の範
囲で最大となり、それ以外で急激に低下することが判明
する。図（ｂ）は、高周波電源のパワー（Ｗ）に対する
曲線で、２乗以上に増加しており、パワーが大きいほど
速くクリーニングされることが判る。図（ｃ）は、反応
炉内の混合ガスの圧力に対するもので、（３，０〜８．
０）Ｔｏｒｒで高速のクリーニングレートかえられるこ
とが判る。Figures 2 (a), (b), and (c) show experimental data that serve as the basis for applying the cleaning method of the present invention to the above-mentioned plasma CVD apparatus. Cleaning rate (Angstrom/m1n) for the ratio CF4/ (CF4 +02)
The curve is It is clear from the figure that the mixing ratio is maximum in the range of 0.6 to 0.9, and rapidly decreases in other regions. Figure (b) shows a curve against the power (W) of the high-frequency power source, which increases to the second power or more, and it can be seen that the higher the power, the faster the cleaning is performed. Figure (c) shows the pressure of the mixed gas in the reactor (3,0 to 8.
0) It can be seen that the cleaning rate can be changed to a high speed with Torr.
この発明においては、高周波電源の周波数を１３．５６
ＭＨｚに設定し、上記の実験データにより、供給パワー
を４００〜ｅｏｏｗ１混合ガスの混合割合ＣＦ４／ （
ＣＦ４ ＋０２ ）を０．６〜０゜９とし、圧力を３．
０〜８．０Ｔｏ ｒ ｒに維持する。この混合割合と、
圧力の維持はインッ） ３１．３２に対スる供給バルブ
のガス流量をマスフローコントローラ（図示省略）によ
り自動制御することにより行われ、各電極シャワー電極
と均熱板）にＡＪ２Ｆ３が付着することなく、反応炉の
内壁や各電極などに付着した反応生成物が高速度でクリ
ーニングされるのである。In this invention, the frequency of the high frequency power source is set to 13.56.
MHz, and according to the above experimental data, the supply power was set to 400~eoow1 mixed gas mixture ratio CF4/ (
CF4 +02) was set to 0.6 to 0°9, and the pressure was set to 3.
Maintain at 0-8.0 Torr. This mixing ratio and
The pressure is maintained by automatically controlling the gas flow rate of the supply valve for the in) 31.32 using a mass flow controller (not shown), and prevents AJ2F3 from adhering to each electrode (shower electrode and heat soaking plate). The reaction products adhering to the inner walls of the reactor, each electrode, etc. are cleaned at a high speed.
［発明の効果］
以上の説明により明らかなように、この発明によるクリ
ーニング方法においては、ＣＦ ４と０２の混合ガスに
よるクリーニングの場合、発生するＡｌＦ２の量もしく
は程度が、高周波電源の周波数に依存することに注目し
、実験により１３．５６ＭＨｚの周波数によりＡＪ！
Ｆ３が全熱、またはほとんど電極に付着しないことが確
認され、また、混合ガスの混合割合の最適値が実験によ
りえられ、さらにクリーニングレートが依存する電源の
供給パワー、混合ガスの混合割合、反応炉内のガス圧力
を、実用されているプラズマＣＶＤ装置に対シて最適値
に特定したもので、別種のガスを用いることな〈従来の
混合ガスにより、無用有害なＡＪＦ３が電極に付着する
ことなく高速のクリーニングがなされ、プラズマＣＶＤ
装置のスルーブツトや、形成された薄膜の品質の向上に
寄与するところには大きいものがある。[Effects of the Invention] As is clear from the above explanation, in the cleaning method according to the present invention, in the case of cleaning with a mixed gas of CF4 and 02, the amount or degree of AlF2 generated depends on the frequency of the high frequency power source. By paying attention to this, we experimentally determined that AJ! with a frequency of 13.56MHz!
It has been confirmed that F3 does not adhere to the electrode due to the total heat or almost no heat, and the optimum value of the mixing ratio of the mixed gas has been obtained through experiments. The gas pressure in the furnace is specified to the optimum value for the plasma CVD equipment in use, and it eliminates the need to use a different type of gas. High-speed cleaning is performed without using plasma CVD.
There are many things that contribute to improving the throughput of the device and the quality of the thin films formed.
第１図は、この発明によるプラズマＣＶＤ装置のクリー
ニング方法を適用するプラズマＣＶＤ装置の構造図、第
２図（ａ）、（ｂ）および（ｃ）は、この発明によるプ
ラズマＣＶＤ装置のクリーニング方法の根拠となった実
験データの曲線図である。
１・・・プラズマＣＶＤ装置、１０・・・筐体（反応炉
）、＋０１・・・ベース、 １０２・・・蓋板
、１０３・・・絶縁リング、＋０４・・・排気口、２０
・・・サセプタ、２１・・・ヒーター２２・・・均熱板
、３０・・・ノズル部、３１．３２・・・インレット、
４０・・・シャワー電極、４１・・・噴射孔、５０・・
・搬入／搬出路、５１・・・ゲート、５２・・・キャリ
ッジ、６・・・ウェハ、 ７・・・高周波電源
。
ＣＦ４ ／（ＣＦ４−０２）
（Ｔｏｒｒ）FIG. 1 is a structural diagram of a plasma CVD apparatus to which the method of cleaning a plasma CVD apparatus according to the present invention is applied, and FIGS. 2(a), (b), and (c) show the method of cleaning a plasma CVD apparatus according to the present invention. It is a curve diagram of experimental data that served as the basis. DESCRIPTION OF SYMBOLS 1... Plasma CVD apparatus, 10... Housing (reactor), +01... Base, 102... Lid plate, 103... Insulating ring, +04... Exhaust port, 20
... Susceptor, 21... Heater 22... Soaking plate, 30... Nozzle part, 31.32... Inlet,
40... Shower electrode, 41... Injection hole, 50...
- Loading/unloading path, 51...gate, 52...carriage, 6...wafer, 7...high frequency power supply. CF4/(CF4-02) (Torr)
Claims (2)
＿２の混合ガスを導入し、該混合ガスの雰囲気下で、高
周波電源により高周波電圧を加圧してグロー放電を発生
させて行うクリーニングにおいて、該高周波電源の周波
数を１３．５６ＭＨｚとし、上記ＣＦ＿４とＯ＿２の混
合割合を、ＣＦ＿４／（ＣＦ＿４＋Ｏ＿０）＝（０．６
〜０．９）の範囲とすることを特徴とする、プラズマＣ
ＶＤ装置のクリーニング方法。(1) CF_4 and O
In cleaning by introducing the mixed gas of _2 and generating glow discharge by applying high-frequency voltage with a high-frequency power supply in the atmosphere of the mixed gas, the frequency of the high-frequency power supply is set to 13.56 MHz, and the above CF_4 and O_2 The mixing ratio of CF_4/(CF_4+O_0)=(0.6
~0.9), plasma C
How to clean a VD device.
００〜６００Ｗとし、上記反応炉内の混合ガスの圧力を
３．０〜８．０Ｔｏｒｒとする、請求項１記載のプラズ
マＣＶＤ装置のクリーニング方法。(2) In the above, the supply power of the high frequency power source is 4
2. The method for cleaning a plasma CVD apparatus according to claim 1, wherein the pressure of the mixed gas in the reactor is 3.0 to 8.0 Torr.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16608490A JPH0456770A (en) | 1990-06-25 | 1990-06-25 | Method for cleaning plasma cvd device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16608490A JPH0456770A (en) | 1990-06-25 | 1990-06-25 | Method for cleaning plasma cvd device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0456770A true JPH0456770A (en) | 1992-02-24 |
Family
ID=15824689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16608490A Pending JPH0456770A (en) | 1990-06-25 | 1990-06-25 | Method for cleaning plasma cvd device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0456770A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5425842A (en) * | 1992-06-09 | 1995-06-20 | U.S. Philips Corporation | Method of manufacturing a semiconductor device using a chemical vapour deposition process with plasma cleaning of the reactor chamber |
| US5522412A (en) * | 1993-08-11 | 1996-06-04 | Tokyo Electron Kabushiki Kaisha | Vacuum treatment apparatus and a cleaning method therefor |
| WO1998001899A1 (en) * | 1996-07-10 | 1998-01-15 | Daikin Industries, Ltd. | Cleaning gas |
| WO2001003159A1 (en) * | 1999-06-30 | 2001-01-11 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
| US6374833B1 (en) * | 1999-05-05 | 2002-04-23 | Mosel Vitelic, Inc. | Method of in situ reactive gas plasma treatment |
| US6852242B2 (en) | 2001-02-23 | 2005-02-08 | Zhi-Wen Sun | Cleaning of multicompositional etchant residues |
| JP2008078678A (en) * | 2007-11-02 | 2008-04-03 | Hitachi Ltd | Method for processing plasma |
| JP2009094530A (en) * | 1996-11-18 | 2009-04-30 | Applied Materials Inc | Ultra high throughput wafer vacuum processing system |
| CN103556127A (en) * | 2013-11-13 | 2014-02-05 | 上海华力微电子有限公司 | Cleaning method of vapor deposition film-forming equipment |
| US20150360266A1 (en) * | 2014-06-17 | 2015-12-17 | Chun-Liang Lai | Container Cleaning Device |
-
1990
- 1990-06-25 JP JP16608490A patent/JPH0456770A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5425842A (en) * | 1992-06-09 | 1995-06-20 | U.S. Philips Corporation | Method of manufacturing a semiconductor device using a chemical vapour deposition process with plasma cleaning of the reactor chamber |
| US5522412A (en) * | 1993-08-11 | 1996-06-04 | Tokyo Electron Kabushiki Kaisha | Vacuum treatment apparatus and a cleaning method therefor |
| USRE36925E (en) * | 1993-08-11 | 2000-10-31 | Tokyo Electron Kabushiki Kaisha | Vacuum treatment apparatus and a method for manufacturing semiconductor device therein |
| WO1998001899A1 (en) * | 1996-07-10 | 1998-01-15 | Daikin Industries, Ltd. | Cleaning gas |
| JP2009094530A (en) * | 1996-11-18 | 2009-04-30 | Applied Materials Inc | Ultra high throughput wafer vacuum processing system |
| US6374833B1 (en) * | 1999-05-05 | 2002-04-23 | Mosel Vitelic, Inc. | Method of in situ reactive gas plasma treatment |
| US6245192B1 (en) | 1999-06-30 | 2001-06-12 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
| US6432831B2 (en) | 1999-06-30 | 2002-08-13 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
| WO2001003159A1 (en) * | 1999-06-30 | 2001-01-11 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
| US6852242B2 (en) | 2001-02-23 | 2005-02-08 | Zhi-Wen Sun | Cleaning of multicompositional etchant residues |
| JP2008078678A (en) * | 2007-11-02 | 2008-04-03 | Hitachi Ltd | Method for processing plasma |
| CN103556127A (en) * | 2013-11-13 | 2014-02-05 | 上海华力微电子有限公司 | Cleaning method of vapor deposition film-forming equipment |
| US20150360266A1 (en) * | 2014-06-17 | 2015-12-17 | Chun-Liang Lai | Container Cleaning Device |
| US9744539B2 (en) * | 2014-06-17 | 2017-08-29 | Chun-Liang Lai | Container cleaning device |
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