JP2003017479A - Precoating method, treatment method, and plasma apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable the inside of a treatment container to be quickly precoated firmly. SOLUTION: By a high-frequency plasma apparatus, having a placement table 22 for placing a wafer 23, a treatment vessel 11 for accommodating the placement table 22, an exhaust means 13 for exhausting in the treatment vessel 11, a gas supply means 14 for supplying gas into the treatment vessel 11, and an antenna 30 for supplying a high-frequency electromagnetic field F into the treatment vessel 11, gas is supplied into the treatment chamber 11, while the wafer 23 is not being placed on the placement rest 22, at the same time, the electromagnetic field F is supplied into the treatment vessel 11 for generating a plasma P, and the plasma P is used for forming an insulation film 51 at least on the inner surface of the treatment chamber 11.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pre-coating method, a processing method and a plasma apparatus, and more particularly to a pre-coating method, a processing method and a plasma apparatus using plasma.

[0002]

2. Description of the Related Art Conventionally, a gate insulating film of a semiconductor element has been formed by a thermal oxidation method. But with this method,
It was difficult to control the film thickness, and it was difficult to form a thin gate insulating film on the order of 1 nm, which is required in the future. Therefore, the plasma CVD method, which can easily control the film thickness and can form the above film thickness, has begun to be used for forming the gate insulating film.

The plasma CVD method is a method in which plasma is generated in a processing container, the gas in the processing container is activated using this plasma, and the reactivity is utilized to form a thin film. As one of the film forming apparatuses by the plasma CVD method, there is a parallel plate type plasma apparatus which generates a plasma by causing an electric discharge between parallel plate electrodes. Regarding this parallel plate type plasma device, an insulating film is formed on the inner surface of the processing container before performing wafer processing in order to prevent contaminants detached from the processing container from adhering to the surface of the wafer to be processed. Technology is proposed. This technique is called pre-coating.

[0004]

However, in the parallel plate type plasma apparatus, since the electron temperature of plasma is high, a dense and uniform insulating film cannot be formed by pre-coating. Therefore, there is a problem that the insulating film formed on the inner surface of the processing container has poor adhesion and is easily peeled off. Further, in the parallel plate type plasma device, there is a problem that it takes a long time to deposit an insulating film by pre-coating because the ion density of plasma is low. The present invention has been made to solve such a problem,
The purpose is to provide a strong pre-coat in the process vessel. Another object is to reduce the time required for pre-coating.

[0005]

In order to achieve such an object, the pre-coating method of the present invention, a mounting table on which a wafer is mounted, a processing container for accommodating the mounting table, and this processing container. Using a plasma device provided with an exhaust means for exhausting the inside, a gas supply means for supplying a gas into the processing container, and an antenna for supplying a high-frequency electromagnetic field in the processing container,
A gas is supplied into the processing container and an electromagnetic field is supplied into the processing container to generate plasma, and an insulating film is formed on at least the inner surface of the processing container using the plasma. It goes without saying that an insulating film may be formed on the surface of the mounting table or the like in addition to the inner surface of the processing container.

The high-frequency plasma device used here can generate plasma having an electron temperature lower than that of the parallel plate type plasma device by using a high-frequency electromagnetic field of, for example, 1 GHz or more. For this reason, a denser and more uniform insulating film is formed on the inner surface of the processing container than before. This insulating film has good adhesion to the processing container and is difficult to peel off. Further, the high frequency plasma device is, for example, 10P.
Since the plasma is generated under a low pressure of a or less, the ion density of the plasma becomes higher under a pressure equivalent to that of the parallel plate type plasma device. Therefore, the insulating film can be deposited on the inner surface of the processing container in a shorter time than the conventional case.

In this pre-coating method, a processing container
The gas supplied inside is Si_xH_yF _z(X is a natural number;
y, z may be a mixed gas of 0 and a natural number) and oxygen.
Yes. In this case, the insulating film formed on the inner surface of the processing container is
It becomes a silicon oxide film. In addition, the gas supplied to the processing container
The Si_xH_yF_z(X is a natural number; y and z are 0 and natural
It may be a mixed gas of (number) and nitrogen. In this case, the process
The insulating film formed on the inner surface of the container should be a silicon nitride film.
It Further, the gas supplied into the processing container is Si_xH_yF
_z(X is a natural number; y and z are 0 and natural numbers) and oxygen and nitrogen
May be mixed gas. In this case, the inner surface of the processing container
The insulating film formed on is a silicon oxynitride film. In addition,
Deposition of insulating film when forming an insulating film on the inner surface of the processing container
The processing container may be heated to a temperature at which the temperature is accelerated.

Further, the pre-coating method of the present invention comprises a mounting table on which a wafer is mounted, an Al-based processing container for accommodating the mounting table, and an exhaust means for exhausting the inside of the processing container.
Using a plasma device equipped with a gas supply means for supplying a gas into the processing container and an antenna for supplying a high-frequency electromagnetic field into the processing container, a fluorine-based gas is supplied into the processing container and is also supplied into the processing container. It is characterized in that an electromagnetic field is supplied to generate plasma, and at least the inner surface of the processing container is fluorinated using this plasma. It goes without saying that, in addition to the inner surface of the processing container, the surface of the mounting table or the like may be fluorinated. Also in this method, for the same reason as described above, it is possible to make it difficult for the constituent metals of the processing container and the like and fluorine to be separated from the inner surface of the processing container, and to carry out this fluorination processing in a shorter time than before.

In this pre-coating method, a processing container
The gas supplied inside is Si_xH_yF _z(X and z are natural
Number; y may be 0 and a natural number). In this case, the processing volume
The inner surface of the vessel is AlF₃Is surface modified. Also, the processing volume
After fluorinating the inner surface of the container,
And the electromagnetic field in the processing container.
Table that was fluorinated using this plasma.
An insulating film may be formed on the surface. in this way
By double coating, plasma potentiometer
Can reduce the pollution in the processing container
it can.

In the processing method of the present invention, a high-frequency electromagnetic field is supplied from the antenna into the processing container to generate plasma, and the plasma is used to pre-coat at least the inner surface of the processing container. Second step of arranging a wafer in the processing container, supplying a high-frequency electromagnetic field from the antenna into the processing container to generate plasma, and using this plasma to form an insulating film on the surface of the wafer Has and
The first step and the second step are characterized by different conditions for generating plasma. As a result, the pre-coating on the inner surface of the processing container and the insulating film formed on the wafer surface can have proper functions. It is needless to say that in the first step, the surface of the mounting table or the like may be pre-coated in addition to the inner surface of the processing container.

In this processing method, in the first step,
Plasma may be generated by lowering the pressure in the processing container than in the second step. By generating plasma at a relatively low pressure in the first step, the ion density of plasma can be increased. This allows
The deposition time can be shortened by increasing the deposition rate of the insulating film on the inner wall surface of the processing container. Further, in the second step, plasma is generated at a relatively high pressure and the ion density of the plasma is lowered, so that damage to the insulating film formed on the wafer surface can be reduced. In the first step, the processing container may be heated to a temperature at which the deposition of the insulating film is promoted, and in the second step, the processing container may be heated to a temperature at which active species are less likely to adhere.

Further, the plasma apparatus of the present invention includes a mounting table on which a wafer is mounted, an Al-based processing container accommodating the mounting table, an exhaust means for exhausting the inside of the processing container, and a gas in the processing container. In a plasma device equipped with a gas supply means for supplying a gas and an antenna for supplying a high-frequency electromagnetic field into the processing container, the inner surface of the processing container is fluorinated. Further, the plasma apparatus of the present invention includes a mounting table on which a wafer is mounted, a processing container for housing the mounting table, an antenna for supplying a high-frequency electromagnetic field into the processing container, and a radiation surface of the antenna. In a plasma device including a first dielectric plate arranged, a heating means for heating a processing container, a first dielectric plate arranged on a side different from the mounting table with respect to the first dielectric plate, A second dielectric plate forming a closed space, and a flow means for circulating a fluid in the closed space to heat the first dielectric plate are provided. In the present invention, for example, a radial line antenna may be used as the antenna. The radiation surface of the radial line antenna may be flat, concave, or convex.

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be described in detail with reference to the drawings.

(First Embodiment) FIG. 1 is a sectional view showing the structure of the main part of a high-frequency plasma device used in the first embodiment of the present invention. This high frequency plasma device has a bottomed cylindrical processing container 11 having an open top. The processing container 11 is made of a metal such as Al. A mounting table 22 is fixed to the center of the bottom surface of the processing container 11 via an insulating plate 21, and a wafer (not shown) is mounted on the upper surface of the mounting table 22. A plurality of exhaust ports 12 connected to a vacuum pump 13 as an exhaust means are provided on the outer peripheral portion of the bottom surface of the processing container 11, and a desired degree of vacuum can be obtained by exhausting the inside of the processing container 11. Processing container 1
A nozzle 14 is provided on the upper side wall of the nozzle 1.
Gas sources 17A and 17B are connected to 4 via mass flow controllers 15A and 15B and open / close valves 16A and 16B. Here, the gas sources 17A and 17B are monosilane SiH ₄ and oxygen O ₂ gas sources, respectively. The nozzle 14, the mass flow controllers 15A and 15B, the on-off valves 16A and 16B, and the gas sources 17A and 17B constitute gas supply means for supplying gas into the processing container 11. The upper opening of the processing container 11 has a dielectric plate 18 so that plasma generated in the processing container 11 does not leak to the outside.
Is blocked by.

A radial line antenna 30 is arranged on the dielectric plate 18. The radial line antenna 30 is isolated from the inside of the processing container 11 by the dielectric plate 18, and is protected from the plasma generated in the processing container 11. Radial line antenna 30
Is composed of two circular conductor plates 31 and 32 which are parallel to each other and which form the radial waveguide 33, and a conductor ring 34 which connects and shields the outer peripheral portions of these conductor plates 31 and 32. An electromagnetic field introduction port 35 for introducing an electromagnetic field into the radial waveguide 33 is formed at the center of the conductor plate 32, which is the upper surface of the radial waveguide 33.
A plurality of slots 36 for supplying the electromagnetic field propagating in the radial waveguide 33 to the inside of the processing container 11 are formed in the conductor plate 31 which is the lower surface of 3. The conductor plate 31 in which the slots 36 are formed constitutes a radiation surface of the radial line antenna 30.

A coaxial waveguide 41 is connected to the radial line antenna 30. The outer conductor 41A of the coaxial waveguide 41 is connected to the electromagnetic field introducing port 35 of the conductor plate 32, and the inner conductor 41B is connected to the center of the conductor plate 31. Further, the coaxial waveguide 41 has a frequency of 1 GHz through a rectangular / coaxial converter 42, a rectangular waveguide 43 and a matching circuit 44.
A high frequency generator 45 that generates a high frequency electromagnetic field having a predetermined frequency within the range of ten and several GHz is connected. The outer circumferences of the dielectric plate 18 and the radial line antenna 30 are covered with an annular shield material 19 arranged on the side wall of the processing container 11, so that the electromagnetic field does not leak outside.

Next, a processing method using the high frequency plasma device shown in FIG. 1 will be described. FIG. 2 is a flowchart showing the flow of the main steps of this processing method. As shown in FIG. 2, this processing method is applied to the processing container 1
Pre-coating step S1 of forming an insulating film on the inner surface of No. 1
And a deposition step S2 of forming an insulating film on the surface of the wafer to be processed. FIG. 3 is a cross-sectional view of the high frequency plasma device in each of steps S1 and S2. Hereinafter, description will be given with reference to this figure.

First, the pre-coating step S1 will be described. When the wafer to be processed is not mounted on the upper surface of the mounting table 22, the pressure inside the processing container 11 is set to 1 to 10 Pa.
To A dummy wafer that is not a processing target may be placed on the upper surface of the mounting table 22. While maintaining the above pressure, monosilane SiH ₄ and oxygen O ₂ are discharged from the nozzle 14.
The mixed gas of and is introduced into the processing container 11 while controlling the flow rate. Here, the frequency generated by the high frequency generator 45 2.
When a high frequency electromagnetic field F of 45 GHz is introduced from the radial line antenna 30 into the processing container 11 via the dielectric plate 18, O ₂ is dissociated to generate O plasma P and O radicals. O radicals are generated on the inner surface of the processing container 11 and the mounting table 2.
SiH ₄ that adheres to the surface of 2 and arrives later is decomposed and reacted to become SiO ₂ . This process is continued for a predetermined time,
As shown in (a), a uniform SiO ₂ film 51 is formed within a thickness range of 0.1 to 10 μm.

Here, the generation of plasma P is 2.45 GH.
Since the high-frequency electromagnetic field F of z is used, it is possible to generate the plasma P having an electron temperature lower than that of the parallel plate type plasma device. Therefore, the processing vessel surface to conventionally dense and uniform SiO ₂ and the inner surface mounting table 22 of 11
The film 51 can be formed. Dense and uniform SiO
_{Since the 2} film 51 has good adhesion to the processing container 11,
It is inherently difficult to peel off. Further, since a sufficient coating action can be obtained even if the film thickness is made thinner than in the conventional case, the peeling caused by the difference in the linear thermal expansion coefficient with the processing container 11 which occurs when the film thickness of the SiO ₂ film is 10 μm or more is suppressed. You can also do it. Further, since the plasma P is generated under a low pressure of 1 to 10 Pa, the mean free path of electrons is longer and the ion density is higher than in the parallel plate type plasma device. For this reason, the deposition rate of SiO ₂ becomes faster than in the past, and the time required for pre-coating can be shortened.

Next, the deposition step S2 will be described. The wafer 23 to be processed is placed on the upper surface of the mounting table 22, and the pressure in the processing container 11 is adjusted to the pre-coating step S.
5 to 100 Pa, which is slightly higher than 1. Plasma P is generated under this pressure to form a SiO ₂ film 52 on the surface of the wafer 23 as shown in FIG. The processing conditions other than the pressure are the same as those in the pre-coating step S1. By generating plasma P at a relatively high pressure and reducing the ion density, SiO ₂ formed on the surface of the wafer 23.
Damage to the film 52 can be reduced. Therefore, if applied to the formation of the gate insulating film of the semiconductor element,
A semiconductor element with less malfunction can be formed. Thus, in the processing method of the present embodiment, each step S1,
By changing the processing conditions in S2, the SiO ₂ film 51,
Each of the 52 can have an appropriate function.

Note that the pre-coating step S1 may be performed again after the deposition step S2 is repeated. Also SiO ₂ is deposited on the inner surface or the like of the processing vessel 11 in the step S2 of the deposition, SiO ₂ film 51
May exceed the film thickness where it is easy to peel off,
The inside of the processing container 11 may be cleaned to remove the SiO ₂ film 51 once, and then the pre-coating step S1 may be performed again.

In the present embodiment, SiO₂Membrane 51, 52
Monosilane SiH_FourAnd oxygen O₂With
An example using a mixed gas is shown, but Si_xH_yF_z(X is
Natural numbers; y and z are 0 and natural numbers) and O₂For mixed gas with
You may stay. Also, as an insulating film in the pre-coat
SiO₂Although the example of forming the film 51 has been described, an insulating film is used.
Si₃ N_Four A film may be formed. Si₃ N_Four Deposit film
To supply the gas, for example, monosilane SiH_FourWhen
Nitrogen N₂Gas source of
It may be introduced into the container 11 to form a film. Note that Si_xH _y
F_zAnd N₂You may use the mixed gas with. In addition,
In the coat, Si_xH_yF_z(Eg SiH_Four)When
O₂And N ₂A silicon oxynitride film using a mixed gas of
You may form a film.

(Second Embodiment) FIG. 4 is a cross-sectional view showing the structure of the main part of a high-frequency plasma device used in the second embodiment of the present invention. The high-frequency plasma device shown in this figure has a heater 61 as a heating means wound around the processing container 11 of the high-frequency plasma device shown in FIG. This heater 61 is a heater power source 6
2 receives heat from the power source and generates heat
1 is heated to a temperature at which the deposition of the insulating film is accelerated in the pre-coating step S1. For example, when the SiO ₂ film 51 is formed as an insulating film on the inner surface of the processing container 11, by heating the processing container 11 to 100 to 300 ° C., the deposition rate of SiO ₂ is increased and the deposition time is increased. Can be shortened.

Further, as shown in FIG. 5, the processing container 11A
The heating means for heating the above may be composed of a groove 63 formed along the entire circumference inside the side wall of the processing container 11A, and an introduction pipe 64 and a discharge pipe 65 for circulating a high-temperature liquid in the groove 63. In this case, the liquid to be circulated in the groove 63 is
For example, perfluoropolyether (Galden) or the like can be used. The gas supply means is omitted in FIG. The heating temperature of the heating means may be changeable. In this case, in the deposition step S2, the processing container 11 is further heated to a higher temperature to make it difficult for active species to adhere, thereby preventing the insulating film from being deposited on the inner wall surface of the processing container 11 in this step S2, and insulating It is possible to prevent the film from growing to a film thickness that is easily peeled off.

(Third Embodiment) FIG. 6 is a cross-sectional view showing the structure of the main part of a high-frequency plasma device used in the third embodiment of the present invention. In this figure, the same or corresponding parts as in FIG. 4 are indicated by the same reference numerals. In the high frequency plasma device shown in FIG. 6, the dielectric plate 18 shown in FIG. 4 has a double structure. That is, the second dielectric plate 18B is arranged above the first dielectric plate 18A that closes the upper opening of the processing container 11 and is separated therefrom. The two dielectric plates 18A and 18B are both made of quartz glass or ceramic (for example, Al ₂ O ₃ , A having a thickness of about 20 to 30 mm).
1N) or the like.

The introduction pipe 71 and the discharge pipe 7 are used as a circulation means for circulating a high-temperature fluid in a closed space surrounded by the two dielectric plates 18A and 18B and the shield material 19A.
2 and 2 are provided on the shield material 19A. The fluid introduced into the closed space heats the first dielectric plate 18A facing the processing container 11 to a temperature (however, 600 ° C. or lower) at which active species are less likely to adhere. For example, SiO ₂ film 5
When depositing 1,52, by heating the first dielectric plate 18A to 400 to 600 ° C., O radicals are attached to the surface of the first dielectric plate 18A and SiO ₂ is deposited. Can be hindered.

As the fluid introduced into the closed space, one that does not easily absorb the high frequency electromagnetic field F is used.
Nitrogen N ₂ or the like is used for gas, and perfluoropolyether or the like is used for liquid. In addition, the first dielectric plate 18
The second dielectric plate 18B forming a closed space together with A is
It may be arranged on the side different from the mounting table 22 with respect to the first dielectric plate 18A. Therefore, the sealed space may be formed by filling the second dielectric plate in the middle of the coaxial waveguide 41 that is the power supply line of the radial line antenna 30. in this case,
The fluid also flows inside the radial line antenna 30.

(Fourth Embodiment) In the above first to third embodiments, an insulating film such as SiO ₂ or Si ₃ N ₄ is formed as a pre-coat on the inner surface of the processing container. But,
When the processing container and the like are made of an Al-based material, the inner surface or the like may be fluorinated to be surface-modified. The form will be described. FIG. 7 is a sectional view showing a main configuration of a high frequency plasma device used in the fourth embodiment of the present invention. The high-frequency plasma device shown in this figure has a gas supply means of the high-frequency plasma device shown in FIG. 1, a gas source 17C of SiF ₄ which is a fluorine-based gas, and
A mass flow controller 15C and an on-off valve 16C corresponding thereto are added. However, processing container 1
It is assumed that 1B and the mounting table 22B are made of Al. The processing method using the high-frequency plasma device shown in FIG. 7 includes a pre-coat step S11 and a deposition step S11.
12 and.

FIG. 8 is a sectional view of the high frequency plasma device in each step. Hereinafter, description will be given with reference to this figure.
In the pre-coating step S11, the pressure in the processing container 11B is set to 1 to 15 Pa in a state where the wafer 23 to be processed is not mounted on the upper surface of the mounting table 22B. Note that a dummy wafer that is not a processing target may be placed on the upper surface of the placing table 22B. While maintaining the above pressure, the flow rate of the SiF ₄ gas was controlled from the nozzle 14 and introduced into the processing container 11B, and the frequency from the radial line antenna 30 to the frequency 2.
A high frequency electromagnetic field F of 45 GHz is introduced into the processing container 11B to generate plasma P. At this time, on the inner surface of the processing container 11B and the surface of the mounting table 22B where Al is exposed,
The following reactions proceed. 2SiF ₄ + 2Al → 2A
lF ₃ + 2Si + F ₂

The inner surface of the processing container 11B and the mounting table 2
The fluorination treatment of the surface of 2B is continued for a predetermined time, and as shown in FIG.
As shown, the film thickness is uniform within the range of 0.1 to 10 μm.
IF ₃The film 81 is formed. AlF₃Is an extremely stable substance
Therefore, AlF₃Inner surface of the processing container 11B with the film 81
By coating the processing container 11B, etc.
And its constituent metals may come off to contaminate the inside of the processing container 11B.
And can be prevented. In this way, the processing container 11
Even with the method of coating by fluorinating the inner surface,
The same effect as the first embodiment can be obtained. That is,
AlF by plasma P with low electron temperature₃Precise membrane 81
It should be densely and uniformly formed, and Al and F should not easily separate.
You can Moreover, due to the high density plasma P,
Perform fluorination at high speed and perform pre-coat in a short time.
You can

The deposition step S12 is the same as the deposition step S2 in the first embodiment.
That is, the wafer 2 to be processed is placed on the upper surface of the mounting table 22B.
3, the pressure inside the processing container 11B is set to 5 to 100 Pa.
While maintaining the temperature of the monosilane SiH ₄ in the processing container 11B.
A mixed gas of oxygen and oxygen O ₂ is introduced to generate plasma P, and Si is formed on the surface of the wafer 23 as shown in FIG. 8B.
The O ₂ film 52 is formed.

[0032] In the present embodiment, when the Al surface of the processing vessel 11B and the mounting table 22B fluorination treatment, although an example of using SiF ₄ as a process gas, Si _x H _y F
_z (x and z are natural numbers; y is 0 and a natural number) may be used. Other than this, F ₂ gas, HF gas, or CF
A mixed gas of ₄ and O ₂ may be used. When the oxidized Al ₂ O ₃ surface of the processing container 11B and the mounting table 22B is subjected to a fluorination treatment, HF gas or N 2 is used as a processing gas.
F ₃ gas may be used. Further, when the nitrided AlN surfaces of the processing container 11B and the mounting table 22B are subjected to the fluorination treatment, ClF gas or NF ₃ gas may be used as the processing gas.

In the pre-coating step S12, after the inner surface of the processing container 11B and the surface of the mounting table 22B are fluorinated to form the AlF ₃ film 81, the A
An insulating film such as a SiO ₂ film 51 or a Si ₃ N ₄ film may be formed on the IF ₃ film 81. The method of forming this insulating film may be the same as the method shown in the step S1 of pre-coating in the first embodiment. By performing double coating in this way, it is possible to reduce contamination in the processing container 11B even when the plasma potential is high.

[0034]

As described above, the pre-coating method of the present invention uses the high-frequency plasma apparatus to form the insulating film on at least the inner surface of the processing container. Since the plasma electron temperature of the high-frequency plasma device is low, it is possible to form a denser and more uniform insulating film than in the prior art, and to prevent peeling. Further, when the plasma is generated under a low pressure, the ion density of the plasma increases, so that the deposition rate of the insulating film on the inner surface of the processing container can be increased and the time required for pre-coating can be shortened. Further, in the pre-coating method of the present invention, at least the inner surface of the Al-based processing container is fluorinated using a high frequency plasma device. Also with this method, the same effect as the above-mentioned pre-coating method can be obtained.

In the processing method of the present invention, a high-frequency electromagnetic field is supplied from the antenna into the processing container to generate plasma, and the plasma is used to pre-coat at least the inner surface of the processing container. Second step of arranging a wafer in the processing container, supplying a high-frequency electromagnetic field from the antenna into the processing container to generate plasma, and using this plasma to form an insulating film on the surface of the wafer Has and
The conditions for generating plasma are different between the first step and the second step. As a result, the pre-coating on the inner surface of the processing container and the insulating film formed on the wafer surface can have proper functions.

In the plasma apparatus of the present invention, the heating means for heating the processing container for accommodating the mounting table and the first dielectric plate arranged to face the radiation surface of the antenna form a second sealed space. It is provided with a dielectric plate and a flow means for circulating a fluid in the closed space to heat the first dielectric plate.
In the pre-coating step, by heating the processing container to a temperature at which the deposition of the insulating film is promoted, it is possible to shorten the deposition time of the insulating film on the inner surface of the processing container. Further, by heating the first dielectric plate to a temperature at which active species do not easily adhere, deposition of an insulating film on the first dielectric plate can be reduced. Further, the heating temperature of the heating means can be freely changed, and in the process of deposition, the processing container is heated to a higher temperature to a temperature at which active species are less likely to adhere, so that an excessive insulating film on the inner surface of the processing container is formed. Can be suppressed.

[Brief description of drawings]

FIG. 1 is a sectional view showing a main configuration of a high-frequency plasma device used in a first embodiment of the present invention.

FIG. 2 is a flowchart showing a flow of main steps of a processing method using the high frequency plasma device shown in FIG.

FIG. 3 is a cross-sectional view of a high frequency plasma device in a pre-coating process and a deposition process.

FIG. 4 is a cross-sectional view showing the main configuration of a high frequency plasma device used in a second embodiment of the present invention.

FIG. 5 is a cross-sectional view showing a main part configuration of another high-frequency plasma device used in the second embodiment of the invention.

FIG. 6 is a sectional view showing a main configuration of a high-frequency plasma device used in a third embodiment of the present invention.

FIG. 7 is a cross-sectional view showing a main configuration of a high frequency plasma device used in a fourth embodiment of the present invention.

FIG. 8 is a cross-sectional view of the high frequency plasma device in a pre-coating process and a deposition process.

[Explanation of symbols]

11, 11A, 11B ... Processing container, 12 ... Exhaust port, 13
... vacuum pump (exhaust means), 14 ... nozzle, 15A-1
5C ... Mass flow controller, 16A-16C ... Open / close valve, 17A-17C ... Gas source, 18, 18A, 18B ...
Dielectric plate, 19, 19A ... Shielding material, 21 ... Insulating plate,
22 and 22B ... Mounting table, 23 ... Wafer, 30 ... Radial line antenna, 31, 32 ... Conductor plate, 33 ... Radial waveguide, 34 ... Conductor ring, 35 ... Electromagnetic field introducing port, 3
6 ... Slot, 41 ... Coaxial waveguide, 41A ... Outer conductor, 4
1B ... Inner conductor, 42 ... Rectangular / coaxial converter, 43 ... Rectangular waveguide, 44 ... Matching circuit, 45 ... High frequency generator, 5
1, 52 ... SiO ₂ film (insulating film), 61 ... Heater (heating means), 62 ... Heater power source, 63 ... Groove, 64, 71
… Introduction pipe, 65, 72… Exhaust pipe, 81… AlF ₃ film, S
1, S11 ... Pre-coating process, F ... High frequency electromagnetic field,
P ... Plasma, S2, S12 ... Deposition process.

Claims (11)

[Claims] 1. A mounting table on which a wafer is mounted, a processing container accommodating the mounting table, an exhaust means for exhausting the inside of the processing container, a gas supply means for supplying a gas into the processing container, and Using a plasma device provided with an antenna for supplying a high-frequency electromagnetic field in the processing container, a gas is supplied into the processing container and an electromagnetic field is supplied into the processing container to generate plasma, and the plasma is generated. A pre-coating method, characterized in that an insulating film is formed on at least the inner surface of the processing container. 2. The pre-coating method according to claim 1, wherein the gas is Si _x H _y F _z (x is a natural number; y and z are 0).
And a natural number) and oxygen are mixed gas, which is a pre-coating method. 3. The pre-coating method according to claim 1, wherein the gas is Si _x H _y F _z (x is a natural number; y and z are 0).
And a natural number) and a mixed gas of nitrogen and a pre-coating method. 4. The pre-coating method according to claim 1, wherein the gas is Si _x H _y F _z (x is a natural number; y and z are 0).
And a natural number), and a mixed gas of oxygen and nitrogen, which is a pre-coating method. 5. A mounting table on which a wafer is mounted, an Al-based processing container accommodating the mounting table, exhaust means for exhausting the inside of the processing container, and gas supply means for supplying gas into the processing container. And a plasma device provided with an antenna for supplying a high-frequency electromagnetic field into the processing container, supplying a fluorine-based gas into the processing container and supplying an electromagnetic field into the processing container to generate plasma. A pre-coating method which is characterized in that at least the inner surface of the processing container is fluorinated using the generated plasma. 6. The pre-coating method according to claim 5, wherein the gas is Si _x H _y F _z (x and z are natural numbers; y is 0).
And a natural number). 7. The pre-coating method according to claim 5, further comprising supplying a gas into the processing container and an electromagnetic field into the processing container to generate plasma, and using the plasma. A pre-coating method, characterized in that an insulating film is formed on the surface that has been subjected to a fluorination treatment. 8. A first step of supplying a high-frequency electromagnetic field from an antenna into the processing container to generate plasma, and using this plasma to pre-coat at least the inner surface of the processing container, the processing container. A second step of arranging a wafer therein, supplying a high-frequency electromagnetic field from the antenna into the processing container to generate plasma, and using the plasma to form an insulating film on the surface of the wafer. A processing method, wherein the first step and the second step have different conditions for generating plasma. 9. The processing method according to claim 8, wherein in the first step, the pressure in the processing container is lower than that in the second step to generate the plasma. . 10. A mounting table on which a wafer is mounted, an Al-based processing container accommodating the mounting table, an exhaust means for exhausting the inside of the processing container, and a gas supply means for supplying gas into the processing container. A plasma apparatus comprising: an antenna for supplying a high-frequency electromagnetic field into the processing container, wherein an inner surface of the processing container is fluorinated. 11. A mounting table on which a wafer is mounted, a processing container accommodating the mounting table, an antenna for supplying a high-frequency electromagnetic field into the processing container, and a first surface arranged to face a radiation surface of the antenna. In a plasma device including a first dielectric plate, heating means for heating the processing container, and a first dielectric plate arranged on a side different from the mounting table with respect to the first dielectric plate. A plasma device comprising: a second dielectric plate that forms a closed space; and a flow unit that causes a fluid to flow in the closed space to heat the first dielectric plate.