CN106057645A - Cleaning method for germanium single crystal polished wafer - Google Patents
Cleaning method for germanium single crystal polished wafer Download PDFInfo
- Publication number
- CN106057645A CN106057645A CN201610438124.7A CN201610438124A CN106057645A CN 106057645 A CN106057645 A CN 106057645A CN 201610438124 A CN201610438124 A CN 201610438124A CN 106057645 A CN106057645 A CN 106057645A
- Authority
- CN
- China
- Prior art keywords
- silicon wafer
- polished silicon
- germanium
- concentration
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02096—Cleaning only mechanical cleaning
Abstract
The invention relates to a cleaning method for a semiconductor wafer, in particular to a cleaning method for a germanium single crystal polished wafer. The cleaning method for the germanium single crystal polished wafer, which is disclosed by the invention, is characterized by comprising the following steps of (1) SPM cleaning: preparing cleaning solution by utilizing concentrated sulfuric acid with the concentration of 95%-98% and hydrogen peroxide with the concentration of 30%-32% according to the volume ratio of 7 to 1; (2) SOM cleaning: placing the germanium polished wafer which is cleaned in the step (1) into cleaning solution which is formed by mixing the concentrated sulfuric acid with the concentration of 95%-98%, ozone water with the concentration of 10 mg/L and deionized water according to the volume ratio of 1 to 1 to 4; and (3) APM cleaning: cleaning the germanium polished wafer which is cleaned in the step (2) into the cleaning solution which is formed by mixing the ammonium hydroxide with the concentration of 28%-30%, hydrogen peroxide with the concentration of 30%-32% and the deionized water according to the volume ratio of 1 to 2 to 15. According to the method, the particles, the metal and the organic matters on the surface of the germanium polished wafer can be effectively removed without destroying the surface of the germanium polished wafer, and the high-clean surface on which a thin and uniform oxide layer is grown can be obtained to realize the requirement for free cleaning (Epi-ready).
Description
Technical field:
The present invention relates to the cleaning method of a kind of semiconductor wafer, particularly to a kind of cleaning method of germanium single crystal polished silicon wafer.
Background technology:
Compared with traditional silicon solar cell, extension GaAs/GaInP etc. are made on germanium single crystal substrate unijunction and tie change more
Compound solaode has that conversion efficiency is high, high temperature resistant, radioprotective, the advantage such as highly reliable, is applied more and more widely
In space solar field.Compound solar cell needs in MOCVD (metallo-organic compound chemical gaseous phase deposition) technique
Growth multilamellar crystalline material, and be hetero-junctions growth, easily produce distortion of lattice.Therefore, compound solar cell is to germanium list
The surface quality of brilliant polished silicon wafer proposes more harsh requirement, except requiring that germanium single crystal polished silicon wafer surface is without particle contaminant, nothing
Organic contaminations, free of surface defects outside, also require on its surface that regeneration grows uniform and thin oxide layer.
The patent of invention (CN101696516A) announced on 04 21st, 2010 discloses a kind of washing-free solar germanium
The surface treatment method of single crystalline substrate sheet, has selected ethanol and HPM (hydrochloric acid/hydrogen peroxide mixture) as cleaning in the method
Liquid, the defect of its two aspects of existence: (1) removes surface particle poor effect；(2) oxide on surface regrowth cannot be protected.
The two defect will influence whether the comprehensive quality of battery.
Summary of the invention:
The present invention is directed to the deficiencies in the prior art, it is provided that the cleaning method of a kind of new germanium single crystal polished silicon wafer.
The invention discloses the cleaning method of a kind of germanium single crystal polished silicon wafer, it is characterised in that comprise the following steps:
(1) SPM cleans: be 7:1 with concentration 95%～98% concentrated sulphuric acid and concentration 30%～32% hydrogen peroxide according to volume ratio
Preparation cleanout fluid, by germanium single crystal polished silicon wafer double swerve 30s in cleanout fluid, during rocking, temperature is maintained at 80 DEG C～83
DEG C, then take out polished silicon wafer, rinse 90s with deionized water is manual；
(2) SOM cleans: the germanium polished silicon wafer after step (1) being cleaned is put into by concentration 95%～98% concentrated sulphuric acid, concentration 10mg/
L Ozone Water and deionized water according in the cleanout fluid that volume ratio is 1:1:4 mixing, double swerve 20s under room temperature, then take out throwing
Mating plate, rinses 90s with deionized water is manual；
(3) APM cleans: the germanium polished silicon wafer after step (2) being cleaned puts into concentration 28%～30% ammonia, 30%～32% peroxide
Change hydrogen and deionized water, according to double swerve 150s in the cleanout fluid that volume ratio is 1:2:15 mixing, rock process temperature and are maintained at
0 DEG C～3 DEG C, then take out polished silicon wafer, with deionized water semi-automatic flushing 180s, dry after rinsing, under major light
Check the surface of polished silicon wafer.
Wherein, the environment of cleaning is in hundred grades of toilets, and temperature is 18 DEG C～22 DEG C, and humidity is 20%～60%.
Wherein, described SPM cleanout fluid is changed once for every eight hours.
Wherein, described SOM cleanout fluid is changed once for every 20 minutes.
Wherein, described APM cleanout fluid often cleans 10 replacings once.
In the present invention, SPM cleanout fluid can remove the heavy metal of surface of germanium monocrystal；SOM cleanout fluid can remove germanium single crystal table
The Organic substance in face；APM cleanout fluid can remove surface of germanium monocrystal slight Organic substance, microgranule and metal, and oxidation can be protected
The regrowth of thing.By using these three cleanout fluid, may be implemented in the case of not destroying germanium polished silicon wafer surface, it is possible to effectively go
Except its surface particles, metal, Organic substance, it is thus achieved that high-cleanness and growth have the surface of uniform and thin oxide layer, reach No clean
(Epi-ready) requirement.
Accompanying drawing illustrates:
Fig. 1 is 6 inches of germanium polished silicon wafer surface oxide layer thickness detection position views；
Fig. 2 is the embodiment after cleaning and 6 inches of germanium polished silicon wafer surface oxide layer thickness comparison diagrams in comparative example；
Detailed description of the invention:
Below in conjunction with the accompanying drawings, the detailed description of the invention of the present invention is described further by embodiment and comparative example.
Embodiment
As a example by 6 inches of germanium polished silicon wafer, the following is clean 6 inches of germanium polished silicon wafer be embodied as step:
(1) SPM cleans: adds the hydrogen peroxide of 550mL in the beaker that specification is 5000mL, adds 3850mL concentrated sulphuric acid,
After stirring, it is heated to 80 DEG C～83 DEG C, 6 inches of germanium polished silicon wafer is put into double swerve 30s in this cleanout fluid gently, then
Take out polished silicon wafer, rinse 90s with deionized water is manual.Concentrated sulphuric acid concentration used by preparation SPM cleanout fluid is 95%～98%, peroxide
Changing hydrogen concentration is 30%～32%.
(2) SOM cleans: adds the deionized water of 3200mL in the beaker that specification is 5000mL, is then sequentially added into
The Ozone Water of 800mL and the concentrated sulphuric acid of 800mL, after stirring, put into this cleanout fluid 6 inches of germanium polished silicon wafer under room temperature gently
Middle double swerve 20s, then takes out polished silicon wafer, rinses 90s with deionized water is manual.Concentrated sulphuric acid used by preparation SOM cleanout fluid is dense
Degree is 95%～98%, and the concentration of Ozone Water is 10mg/L.
(3) APM cleans: adds the deionized water of 3750mL in the beaker that specification is 5000mL, is then sequentially added into
The ammonia of 250mL and the hydrogen peroxide of 500mL, after stirring, be cooled to 0 DEG C～3 DEG C, 6 inches after step (2) is cleaned
Germanium polished silicon wafer puts into double swerve 150s in this cleanout fluid gently, then takes out polished silicon wafer, with the semi-automatic flushing of deionized water
180s, dries after rinsing, checks the surface of polished silicon wafer under major light.Ammonia concn used by preparation SPM cleanout fluid is
28%～30%, concentration of hydrogen peroxide is 30%～32%.
In cleaning process, SPM cleanout fluid is changed once for every eight hours；SOM cleanout fluid is changed once for every 20 minutes；APM cleans
Liquid often cleans 10 and changes once.
Germanium single crystal polished silicon wafer surface particles, metal, Organic substance is being removed, it is thus achieved that noble and unsullied for inspection technical scheme
Clean and growth has the technique effect on the surface of uniform and thin oxide layer the most preferable, and inventor has carried out contrast test, situation
As follows:
Comparative example one
Compared with embodiment, (2nd), (3) step identical, (1st) step is different, and its concrete operations are: be 5000mL toward specification
Beaker in add the hydrogen peroxide of 900mL, add 3600mL concentrated sulphuric acid, after stirring, be heated to 60 DEG C, 6 inches
Germanium polished silicon wafer puts into double swerve 60s in this cleanout fluid gently, then takes out polished silicon wafer, rinses 90s with deionized water is manual.Join
Concentrated sulphuric acid concentration used by SPM cleanout fluid processed is 95%～98%, and concentration of hydrogen peroxide is 30%～32%.
Comparative example two
Compared with embodiment, (1st), (3) step identical, (2nd) step is different, and concrete operations are: be 5000mL's toward specification
Beaker adds the deionized water of 4000mL, is then sequentially added into the Ozone Water of 400mL and the concentrated sulphuric acid of 400mL, stirs
After, under room temperature, 6 inches of germanium polished silicon wafer are put into double swerve 30s in this cleanout fluid gently, then take out polished silicon wafer, use deionization
Sailor's work rinses 45s.Concentrated sulphuric acid concentration used by preparation SOM cleanout fluid is 95%～98%, and consistency of ozone water is 5mg/L.
Comparative example three
Compared with embodiment, (1st), (2) step identical, (3rd) step is different, and concrete operations are: be 5000mL's toward specification
Beaker adds the deionized water of 3750mL, is then sequentially added into the ammonia of 250mL and the hydrogen peroxide of 750mL, stirs
After, it being cooled to 0 DEG C～3 DEG C, 6 inches of germanium polished silicon wafer after step (2) is cleaned put into double swerve in this cleanout fluid gently
90s, then takes out polished silicon wafer, with deionized water semi-automatic flushing 120s, dries after rinsing, checks and throw under major light
The surface of mating plate.Ammonia concn used by preparation APM cleanout fluid is 28%～30%, and concentration of hydrogen peroxide is 30%～32%.
With ellipsometer test and surface particles degree tester, the germanium single crystal polished silicon wafer after cleaning is carried out surface oxidation respectively
Layer thickness is measured and surface particles degree detects, and as shown in Figure 2 and Table 1, the result of three comparative examples does not all have the ideal of embodiment,
It can be said that by concentration, temperature and the proportioning of cleanout fluid and germanium single crystal polished silicon wafer processed time and the control of scavenging period
System, technical scheme can effectively remove its surface particles, metal, Organic substance, it is thus achieved that high-cleanness and growth have thin and
The surface of uniform oxide layer, reaches the requirement of No clean (Epi-ready).
Germanium polished silicon wafer surface particles degree after table 1 cleans tests data
Claims (5)
1. the cleaning method of germanium single crystal polished silicon wafer, it is characterised in that comprise the following steps:
(1) SPM cleans: be 7:1 with concentration 95%～98% concentrated sulphuric acid and concentration 30%～32% hydrogen peroxide according to volume ratio
Preparation cleanout fluid, by germanium single crystal polished silicon wafer double swerve 30s in cleanout fluid, during rocking, temperature is maintained at 80 DEG C～83
DEG C, then take out polished silicon wafer, rinse 90s with deionized water is manual；
(2) SOM cleans: the germanium polished silicon wafer after step (1) being cleaned is put into by concentration 95%～98% concentrated sulphuric acid, concentration 10mg/
L Ozone Water and deionized water according in the cleanout fluid that volume ratio is 1:1:4 mixing, double swerve 20s under room temperature, then take out throwing
Mating plate, rinses 90s with deionized water is manual；
(3) APM cleans: the germanium polished silicon wafer after step (2) being cleaned puts into concentration 28%～30% ammonia, 30%～32% peroxide
Change hydrogen and deionized water, according to double swerve 150s in the cleanout fluid that volume ratio is 1:2:15 mixing, rock process temperature and are maintained at
0 DEG C～3 DEG C, then take out polished silicon wafer, with deionized water semi-automatic flushing 180s, dry after rinsing, under major light
Check the surface of polished silicon wafer.
2. the cleaning method of germanium single crystal polished silicon wafer, it is characterised in that the environment of cleaning is in hundred grades of toilets, temperature is 18 DEG C
～22 DEG C, humidity is 20%～60%.
3. the cleaning method of germanium single crystal polished silicon wafer, it is characterised in that described SPM cleanout fluid is changed once for every eight hours.
4. the cleaning method of germanium single crystal polished silicon wafer, it is characterised in that described SOM cleanout fluid is changed once for every 20 minutes.
5. the cleaning method of germanium single crystal polished silicon wafer, it is characterised in that described APM cleanout fluid often cleans 10 and changes once.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610438124.7A CN106057645A (en) | 2016-06-20 | 2016-06-20 | Cleaning method for germanium single crystal polished wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610438124.7A CN106057645A (en) | 2016-06-20 | 2016-06-20 | Cleaning method for germanium single crystal polished wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106057645A true CN106057645A (en) | 2016-10-26 |
Family
ID=57167690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610438124.7A Pending CN106057645A (en) | 2016-06-20 | 2016-06-20 | Cleaning method for germanium single crystal polished wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106057645A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106964593A (en) * | 2017-04-17 | 2017-07-21 | 安徽路明光电科技有限公司 | A kind of cleaning method of LED silicon wafer circuitry plate |
| CN109277359A (en) * | 2018-09-29 | 2019-01-29 | 中国电子科技集团公司第四十六研究所 | A kind of cleaning process of infrared lens germanium single crystal twin polishing piece |
| CN110249411A (en) * | 2016-12-05 | 2019-09-17 | 校际微电子中心 | The washing methods of Ge, SiGe or germanide |
| CN110739209A (en) * | 2019-11-01 | 2020-01-31 | 中国电子科技集团公司第四十六研究所 | Cleaning process of germanium single crystal single-side polished wafers |
| TWI705131B (en) * | 2016-12-07 | 2020-09-21 | 校際微電子中心 | How to clean Ge, SiGe or germanium stone |
| CN116004332B (en) * | 2022-01-24 | 2024-05-10 | 云南鑫耀半导体材料有限公司 | Method for cleaning adhesive on back of rough polished germanium wafer |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1649100A (en) * | 2004-07-23 | 2005-08-03 | 王文 | System and its method for high efficiency ozone water cleaning semiconductor wafer |
| CN101696516A (en) * | 2009-10-20 | 2010-04-21 | 南京中锗科技股份有限公司 | Surface processing method of washing-free solar germanium substrate |
| CN103008298A (en) * | 2011-09-22 | 2013-04-03 | 台湾积体电路制造股份有限公司 | In-situ backside cleaning of semiconductor substrate |
-
2016
- 2016-06-20 CN CN201610438124.7A patent/CN106057645A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1649100A (en) * | 2004-07-23 | 2005-08-03 | 王文 | System and its method for high efficiency ozone water cleaning semiconductor wafer |
| CN101696516A (en) * | 2009-10-20 | 2010-04-21 | 南京中锗科技股份有限公司 | Surface processing method of washing-free solar germanium substrate |
| CN103008298A (en) * | 2011-09-22 | 2013-04-03 | 台湾积体电路制造股份有限公司 | In-situ backside cleaning of semiconductor substrate |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110249411A (en) * | 2016-12-05 | 2019-09-17 | 校际微电子中心 | The washing methods of Ge, SiGe or germanide |
| TWI705131B (en) * | 2016-12-07 | 2020-09-21 | 校際微電子中心 | How to clean Ge, SiGe or germanium stone |
| CN106964593A (en) * | 2017-04-17 | 2017-07-21 | 安徽路明光电科技有限公司 | A kind of cleaning method of LED silicon wafer circuitry plate |
| CN106964593B (en) * | 2017-04-17 | 2019-09-17 | 安徽一路明光电科技有限公司 | A kind of cleaning method of LED light silicon wafer circuitry plate |
| CN109277359A (en) * | 2018-09-29 | 2019-01-29 | 中国电子科技集团公司第四十六研究所 | A kind of cleaning process of infrared lens germanium single crystal twin polishing piece |
| CN109277359B (en) * | 2018-09-29 | 2021-08-31 | 中国电子科技集团公司第四十六研究所 | Cleaning process of germanium single crystal double-sided polishing sheet for infrared lens |
| CN110739209A (en) * | 2019-11-01 | 2020-01-31 | 中国电子科技集团公司第四十六研究所 | Cleaning process of germanium single crystal single-side polished wafers |
| CN116004332B (en) * | 2022-01-24 | 2024-05-10 | 云南鑫耀半导体材料有限公司 | Method for cleaning adhesive on back of rough polished germanium wafer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106057645A (en) | Cleaning method for germanium single crystal polished wafer | |
| US9136104B2 (en) | Method for cleaning silicon wafer and apparatus for cleaning silicon wafer | |
| JP4951625B2 (en) | Preparation of silicon surface | |
| CN102500573B (en) | Method for cleaning alpha-Al2O3 monocrystal | |
| WO2012048534A1 (en) | Process for cleaning compound semiconductor wafer | |
| KR20130063474A (en) | Cleaning liquid composition for electronic device | |
| CN105869997A (en) | Amine-free post-CMP composition and using method thereof | |
| SG152158A1 (en) | Method for cleaning silicon wafer | |
| Cuypers et al. | Wet chemical etching of InP for cleaning applications: I. An oxide formation/oxide dissolution model | |
| CN108615673A (en) | Semiconductor surface processing method in a kind of photoetching process of rework | |
| CN102140037B (en) | Method for realizing self-assembly of zinc oxide nanometer wires | |
| CN102078869A (en) | Photomask cleaning method | |
| WO2011043222A1 (en) | Cleaning water for wafer and method for cleaning wafer | |
| CN107870510A (en) | The cleaning method of photomask board and remove gluing method | |
| CN115992390B (en) | Surface treatment method for molecular beam epitaxial gallium antimonide substrate | |
| WO2012001874A1 (en) | Method for cleaning semiconductor wafer for solar cell substrate | |
| CN111540670A (en) | Wet cleaning method for wafer and manufacturing method for semiconductor device | |
| Zhang et al. | Recent progress on critical cleaning of sapphire single-crystal substrates: A mini-review | |
| CN107354513B (en) | High-efficiency stable germanium single crystal wafer etching process | |
| JP2007214412A (en) | Semiconductor substrate cleaning method | |
| WO2000033367A1 (en) | Wet cleaning apparatus | |
| CN201611648U (en) | Wet etching equipment | |
| TAN et al. | Effect of surfactant on removal of particle contamination on Si wafers in ULSI | |
| WO2015157957A1 (en) | Method for cleaning langasite wafer | |
| KR101799282B1 (en) | Cleaning composite of semiconductor wafer and display panel and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20161026 |
|
| RJ01 | Rejection of invention patent application after publication |